JP2003268201A - Epoxy resin molding material for sealing of semiconductor and semiconductor apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain an epoxy resin molding material having good fluidity even if a ratio of an inorganic filler is high and excellent in package reliability after seal-molding of a semiconductor, and a semiconductor apparatus using the same. <P>SOLUTION: In the epoxy resin molding material comprising at least an epoxy resin, a curing agent, a curing accelerator and an inorganic filler as raw materials and the semiconductor apparatus using the same, the epoxy resin-molded material for sealing of a semiconductor comprises the inorganic filler having an average particle size of 15-30 μm and those of particle size distribution set in the following (c): (a) spherical silica having an average particle size of 20-30 μm; (b) spherical silica having an average particle size of 0.1-0.05 μm; and (c) (b)/(a+b) is 0.005-0.1 (weight ratio) and (a+b) is not less than 90 wt.% of the inorganic filler component. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin molding material which has good fluidity even when the proportion of an inorganic filler is high and which is excellent in package reliability after semiconductor encapsulation molding, and the use thereof. The present invention relates to a semiconductor device which is sealed by a method.

[0002]

2. Description of the Related Art For sealing semiconductor elements such as IC and LSI, epoxy resin molding materials which can be transfer molded are widely used from the viewpoint of reliability and productivity. The epoxy resin molding material is composed of an epoxy resin, a phenol resin, a curing accelerator, a silica filler, a release agent, a flame retardant, a coupling agent and the like. On the other hand, in response to the trend toward smaller and lighter electronic devices and higher functionality, downsizing of semiconductor devices,
Amid the ever-increasing thinning and narrowing of pitch, epoxy resin molding materials for semiconductor encapsulation are strongly required to have improved solder heat resistance and moisture resistance, which are related to the reliability of semiconductor devices after encapsulation molding. . Therefore, in order to reduce the stress and moisture absorption inside the semiconductor device, the component of the epoxy resin molding material is being changed to a material having a high inorganic filler ratio. However, this migration causes agglomeration of the inorganic filler, which causes a new problem of deterioration of fluidity of the obtained epoxy resin molding material.
It is in a situation of being upgraded.

Regarding the particle size distribution of the inorganic filler for improving the ratio of the inorganic filler while maintaining good fluidity, JP-A 03-177450 and JP-A 06-2 are available.
No. 24328, JP-A-11-124504, and JP-A-11-166105. However, these methods have a problem that the ratio of the inorganic filler is not sufficient.

[0004]

DISCLOSURE OF THE INVENTION The present invention provides an epoxy resin molding material which has good fluidity even if the proportion of the inorganic filler is high and which is excellent in package reliability after semiconductor encapsulation molding. The present invention provides a semiconductor device sealed by using.

[0005]

The present invention has been studied in view of such circumstances, and as a result, a combination of spherical silica having an average particle diameter of 20 to 30 μm and spherical silica having an average particle diameter of 0.1 to 0.05 μm is combined. It was newly found that the above greatly improves the fluidity.

That is, the present invention includes (1) an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler as essential components, and the inorganic filler has an average particle diameter of 15
˜30 μm and (a) average particle size 20 to 30 μm
Spherical silica and (b) average particle size 0.1 to 0.05
(b) / (a + b) of the spherical silica of μm is 0.005
0.1 (weight ratio), and (a + b) contains 90% by weight or more of the inorganic filler component, a semiconductor encapsulating epoxy resin molding material, (2) where the inorganic filler is among all raw material components 90% by weight or more of the epoxy resin molding material for semiconductor encapsulation according to the item (1), (3) (1) or (2)
A semiconductor device obtained by encapsulating with the epoxy resin molding material for encapsulating a semiconductor according to the item.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention is described in detail below.
The epoxy resin used in the present invention is not particularly limited as long as it has two or more epoxy groups in one molecule and is solid at room temperature, and examples thereof include bisphenol type epoxy resin and biphenyl. Type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, alkyl-modified triphenol methane type epoxy resin, etc., and these may be used alone or in combination.

As the curing agent used in the present invention, a phenol resin is used and is not particularly limited as long as it is solid at room temperature. For example, phenol novolac resin, cresol novolac resin, dicyclo Pentadiene-modified phenol resin, phenol aralkyl resin, naphtho-aralkyl resin, tempene-modified phenol resin and the like can be mentioned, and these may be used alone or in combination. The curing accelerator used in the present invention serves as a catalyst for the curing reaction for crosslinking the epoxy resin and the phenol resin, and examples thereof include amine compounds, organic sulfonic acid compounds, and imidazole compounds. They may be used alone or in combination.

Examples of the inorganic filler used in the present invention include fused spherical silica, crystalline silica and silicon nitride.
These may be used alone or in combination.
Moreover, you may use what was surface-treated previously with the silane coupling agent.

The inorganic filler used in the present invention is (b) / a combination of (a) spherical silica having an average particle size of 20 to 30 μm and (b) spherical particles having an average particle size of 0.1 to 0.05 μm.
(A + b) is 0.005 to 0.1 (weight ratio),
It is essential that (a + b) is 90% by weight or more of the inorganic filler component. (A) average particle size 20 to 30 μm
In the void that occurs where the spherical silica particles of
Since the spherical silica of (b) having an average particle diameter of 0.1 to 0.05 μm can enter, as a result, the silica ratio can be improved without increasing the volume occupied by the silica portion. Therefore, the resin composition obtained by the combination of these can improve the ratio of the inorganic filler without lowering the fluidity.
The average particle size of the spherical silica of (b) is 0.1 to 0.05 μm.
m is preferable, if the average particle diameter is larger than this, it becomes impossible to enter the void portion, and if it is smaller, aggregation of silica occurs, and in any case the fluidity of the obtained resin composition is reduced, which is not preferable. . The average particle diameter of the spherical silica of (a) is preferably 20 to 30 μm. If the average particle diameter is larger or smaller than this, it is difficult for the spherical silica of (b) to enter, and the fluidity of the obtained resin composition is lowered, which is preferable. Absent. (B) / (a +
b) is preferably 0.005 to 0.1 (weight ratio). If it is less than 0.005, it is difficult to improve the silica ratio without increasing the volume occupied by the silica portion, and if it is 0.1 or more. If it is large, the aggregation of silica between (b) tends to occur, which is not preferable in any case. The average particle diameter of the inorganic filler is preferably 15 to 30 μm, and if it is larger or smaller than this, the fluidity of the obtained resin composition is lowered, which is not preferable.

The average particle size of the inorganic filler can be determined by the so-called light scattering method, which is determined from the intensity of scattered light at an arbitrary scattering angle when light is irradiated to particles floating in a fluid. In the present invention, the method of adding the inorganic filler is not particularly limited. The epoxy resin molding material for semiconductor encapsulation obtained by the present invention, in addition to the essential components described so far, if necessary, a surface treatment agent used as a filler such as γ-glycidoxypropyltrimethoxysilane, A coloring agent such as bonblack, a release agent such as carnauba wax, a low stress agent such as silicone oil, and a flame retardant such as antimony trioxide can be added.

[0012]

EXAMPLES The present invention will be specifically described below with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples. <Compounding> Epoxy resin [3,3 ', 5,5'-tetramethylbiphenol diglycidyl ether resin, melting point 103 [deg.] C., epoxy equivalent 195] phenol resin [melt viscosity at 150 [deg.] C. 0.3 Pa.
s, hydroxyl equivalent 175] triphenylphosphine γ-glycidoxypropyltrimethoxysilanecarbon black carnauba wax spherical silica [average particle diameter 29 μm] (silica a-
1) Spherical silica [average particle diameter 21 μm] (silica a-
2) Spherical silica [average particle size 0.1 μm] (silica b
-1) Spherical silica [average particle size 0.05 μm] (silica
b-2) Crushed silica [average particle size 21 μm] (silica a-
3) Spherical silica [average particle size 0.2 μm] (silica b
-3) Spherical silica [average particle size 0.01 μm] (silica
b-4)

<Production Method> A Henschel mixer (capacity 15
Liter, rotation speed, 1500 rpm. ) Is pre-mixed for 2 minutes in the same direction and twin-screw extruder kneader (screw diameter D = 30 mm, extruder length = 1 m, kneading disc length = 6 D, screw rotation speed 300 rpm., Discharge rate 20 kg / hr). It was heated and kneaded. The mixture that had been heated and kneaded was cooled and then pulverized, which was then tableted and sealed with a low-pressure transfer molding machine under a condition of 175 ° C., 70 kg / cm ² , and 120 seconds for sealing a 9 × 9 mm semiconductor element in 80 pQFP. I stopped. Examples 1-3 and Comparative Examples 1-
The results of No. 5 are shown in Table 1.

<Evaluation method> Spiral flow: molding temperature 175 ° C., molding pressure 70 k
Measured by transfer molding at g / cm ² . Solder crack test: After the sealed test element is allowed to absorb moisture under the conditions of 85 ° C., relative humidity of 60% and 168th order, IR
Reflow (240 ° C, 10 seconds) is performed 3 times to determine the presence or absence of package cracks. n = 10. Moisture absorption rate: 3 g of each material immediately before melt-kneading was weighed in an aluminum cup having a diameter of 30 mm, and 150 ° C. × 15 min. Heat treatment is applied to solidify the material. Solidified material at 50 ℃ × 100%
RH × 24 Hr treatment was performed, and the moisture absorption rate was calculated from the weight increase after the treatment (unit:%). Adhesion: After the solder crack test, the test element was observed with an ultrasonic flaw detector for peeling at the interface between the semiconductor element and the molded product of the resin composition. n = 10.

[0015]

[Table 1]

[0016]

EFFECTS OF THE INVENTION According to the present invention, an epoxy resin molding material, which has good fluidity even when the proportion of the inorganic filler is high, and which is excellent in package reliability after semiconductor encapsulation molding, is used. It is possible to obtain a semiconductor device which is sealed by the above method.

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4J002 CC042 CD001 DJ006 DJ016                       FA086 FB096 FD016 FD142                       GQ05                 4M109 AA01 EA02 EB03 EB04 EB12                       EC14

Claims (3)

[Claims] 1. An epoxy resin, a curing agent, a curing accelerator, and an inorganic filler as essential components, wherein the inorganic filler has an average particle size of 15 to 30 μm and the following (a) and (b):
An epoxy resin molding material for semiconductor encapsulation, which comprises the components under the condition (c). (A) Spherical silica having an average particle diameter of 20 to 30 μm. (B) Spherical silica having an average particle diameter of 0.1 to 0.05 μm. (C) (b) / (a + b) is 0.005 to 0.1 (weight ratio), and (a + b) is 90% by weight of the inorganic filler component.
That is all. 2. The epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the inorganic filler is 90% by weight or more based on all raw material components. 3. A semiconductor device encapsulated with the epoxy resin molding material for semiconductor encapsulation according to claim 1 or 2.