JP2003258304A - Semiconductor light emitting element and its fabricating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain an LED of such a structure as a transparent conductive film of metal oxide is employed as a current distribution film in which the forward working voltage Vf is lowered while eliminating variation of Vf among the elements by making possible to lower the resistance of the transparent conductive film. <P>SOLUTION: A light emitting part consisting of a first conductivity type clad layer 2 and a second conductivity type clad layer 4 sandwiching an active layer 3 is formed on a first conductivity type substrate 1, a transparent conductive layer 8 of metal oxide is formed thereon, an upper electrode 9 is formed at a part on the surface of the transparent conductive layer, and an electrode 10 is formed entirely or partially on the surface of the first conductivity type substrate 1 opposite to the side where the light emitting layer is formed. In such a semiconductor light emitting element, a multilayer structure of a Zn layer 6 and an Ni layer 7 is provided between the second conductivity type clad layer 4 and the transparent conductive layer 8. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-luminance semiconductor light emitting device, particularly to a semiconductor light emitting device having a low forward operation voltage and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, light emitting diodes (Light Emitting)
Most of the diodes (LEDs) were GaP green and AlGaAs red. However, recently GaN and AlG
Since it became possible to grow an aInP-based crystal layer by the MOVPE method, high brightness LE of orange, yellow, green and blue was obtained.
D can be produced now.

Epitaxial wafers formed by the MOVPE method have enabled the production of LEDs exhibiting short-wavelength light emission and high brightness, which have never existed before. However, if an attempt is made to grow the film thickness of the current spreading layer in order to obtain high brightness, there is a problem that the cost of the LED epitaxial wafer increases.

As a method of solving these problems, there is a method of using a material that can obtain a resistance value as low as possible for the current spreading layer. For example, in the case of AlGaInP quaternary system, GaP or AlGaAs is used as the current spreading layer. However, even if these materials having a low resistivity are used, it is necessary to increase the film thickness to 8 μm or more in order to improve the current distribution.

In order to make this film thinner, it is conceivable to lower the resistivity of the current spreading layer. Further, since it is difficult to change the mobility drastically, attempts have been made to increase the carrier concentration, but at the present stage, the carrier concentration cannot be increased so that the current dispersion layer can be thinned.

As a means for solving this problem, a method using a transparent conductive film has been proposed because the carrier concentration is very high and sufficient current distribution can be obtained with a thin film thickness, instead of the semiconductor current distribution layer. .

[0007]

However, when a transparent conductive film using a metal oxide film is used, a metal electrode is formed thereon, but contact resistance occurs between the uppermost layer of the epitaxial wafer and the transparent conductive film. Therefore, there arises a problem that the forward operating voltage becomes high.

In order to solve this problem, Zn or Au--Z is provided between the uppermost layer of the epitaxial wafer and the transparent conductive film.
Forward operation voltage (hereinafter abbreviated as Vf) by inserting n-alloy film
A method of lowering the noise is disclosed (Japanese Patent Laid-Open No. 11-402).
No. 0 specification).

However, according to this method, the transparent conductive film is formed as 420
If formed at a temperature of ℃ or higher, the Zn or Au-Zn alloy film formed between the uppermost layer of the epitaxial wafer and the transparent conductive film becomes spherical, and the Zn or Au-Zn alloy film does not exist in the semiconductor light emitting device or the epitaxial wafer. Will be created. Therefore, in the semiconductor light emitting device,
Something with very high Vf can be made. Further, if the transparent conductive film forming temperature is lower than 420 ° C. in order to suppress the spheroidization, the resistance of the transparent conductive film cannot be sufficiently lowered, and there is no effect of forming the transparent conductive film.

In addition to the Zn and Au--Zn alloy films, Ni, In and A are provided between the uppermost layer of the epitaxial wafer and the transparent conductive film.
l, Au, Pt, Sb, Ag, Ti, Cr, Mo, V,
Au-Ge, Au-Sn, In-Sn, Au-Be, I
A method of lowering Vf by inserting n-Zn is disclosed (Japanese Patent Laid-Open No. 2001-36130, 2001-6872).
No. 8).

However, in the case of using In—Zn, under the above-mentioned conditions for forming the transparent conductive film, if formed at 420 ° C. or higher, the In—Zn alloy film formed between the uppermost layer of the epitaxial wafer and the transparent conductive film becomes spherical. As a result, a portion without the In—Zn alloy film is formed in the surface of the semiconductor light emitting device or the epitaxial wafer. Therefore, some semiconductor light emitting devices can have a very high Vf.

Other materials have a melting point of 420 ° C.
The spheroidization phenomenon occurs in the following materials. Melting point 42
Insertion of the material at 0 ° C. or higher can suppress the spheroidization phenomenon, but Vf is higher than when Zn-based material is used.
Is high.

Therefore, an object of the present invention is to solve the above problems and to reduce the resistance of a transparent conductive film in a forward direction in a semiconductor light emitting device having a structure using a transparent conductive film of a metal oxide film as a current spreading film. The purpose is to lower the operating voltage Vf and to eliminate variations in Vf between elements.

[0014]

In order to achieve the above object, the present invention is configured as follows.

A semiconductor light emitting device according to the invention of claim 1 is
On the first conductivity type substrate, an active layer is sandwiched between a first conductivity type clad layer and a second conductivity type clad layer to form a light emitting portion, and a transparent conductive layer made of a metal oxide film is formed thereon. Formed,
An upper electrode is formed on a part of the surface of the transparent conductive layer, and on a surface opposite to the surface where the light emitting section layer of the first conductivity type substrate is formed, a semiconductor light emitting device in which an electrode is formed wholly or partially, A Zn layer and a Ni layer are sequentially stacked between the second conductive type clad layer and the transparent conductive layer.

According to a second aspect of the present invention, in the semiconductor light emitting element according to the first aspect, a second conductivity type current spreading layer is formed between the light emitting portion and the Zn layer. To do. This is a form in which the Zn layer is present on the side of the current spreading layer.

According to a third aspect of the present invention, in the semiconductor light emitting element according to the first or second aspect, the Zn layers sequentially stacked are partially laminated on a portion of a portion immediately below the electrode formed on the transparent conductive layer. The layer and the Ni layer are not formed.

According to a fourth aspect of the invention, in the semiconductor light emitting device according to any one of the first to third aspects, the Zn layer and the Ni layer are formed.
Each of the layers has a thickness of 1 nm or more,
The i-layer has a total thickness of 15 nm or less.

According to a fifth aspect of the present invention, in the semiconductor light emitting element according to any one of the first to fourth aspects, the upper electrode has a circular shape, a rectangular shape, or a shape in which a protrusion is attached to a circular prism. To do.

According to a sixth aspect of the present invention, in the semiconductor light emitting device according to the third aspect, the Zn layer and the Ni layer are sequentially stacked.
The region where the layer is not formed is characterized in that the center thereof substantially coincides with the upper electrode and is 0.6 to 1.3 times as large as the electrode.

According to a seventh aspect of the present invention, in the semiconductor light emitting element according to any one of the first to sixth aspects, the substrate is GaA.
s, and the light emitting portion is AlGaInP or GaIn
It is characterized by consisting of P.

A method for manufacturing a semiconductor light emitting device according to an eighth aspect of the present invention is the method for manufacturing a semiconductor light emitting device according to any one of the first to sixth aspects, wherein the formation temperature of the transparent conductive layer is 420 ° C. or higher. It is characterized by

In the semiconductor light emitting device according to the third and sixth aspects, when the electrodes are provided, a portion where the metal thin film layer is not partially formed on the epitaxial wafer and a center thereof are formed by a photolithography process. The electrodes may be arranged to match.

<Summary of the Invention> In order to achieve the above object, the present invention provides a metal for reducing Vf on the surface of an epitaxial wafer in an LED having a structure using a transparent conductive film of a metal oxide film as a current spreading film. A layered structure of Zn and Ni is provided as a layer, which eliminates the variation of Vf between elements of a semiconductor light emitting element, especially the generation of elements having a high Vf, and raises the formation temperature of the transparent conductive film to provide a low-resistance transparent conductive film. It is possible to provide a LED with a transparent electrode having a low Vf and a high emission output with a small variation.

As shown in FIG. 4, if the thickness of each of the Zn layer and the Ni layer is 1 nm or more, the Zn layer becomes uniform and the forward operating voltage Vf does not vary between elements. The effect of lowering the conventional level or lower (1.90 V or lower in FIG. 4) can be obtained, and Vf decreases as the thickness increases, but as shown in FIG.
Since the emission output decreases as the layer thickness increases,
It is not a good idea to make it too thick in terms of light output.
The total thickness of the Zn layer and the Ni layer is preferably 15 nm or less.

In addition, in the region of the Zn layer and the Ni layer, a portion directly below the electrode formed on the transparent conductive layer should be in a form in which a part of the Zn layer and the Ni layer is omitted (FIG. 2). You can also In this mode, the region where the Zn layer and the Ni layer are not formed does not need to be exactly aligned with the upper electrode, and the center is approximately aligned with the upper electrode, and is 0.6 to 1.3 times as large as that of the electrode. can do.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below based on the illustrated embodiments. In the following example, the first conductivity type is n-type and the second conductivity type is p-type.

[Conventional Example] As a conventional example, an epitaxial wafer for a red light emitting diode having the structure shown in FIG.

First, the MOVP is formed on the n-type GaAs substrate 1.
N-type (Se-doped) GaAs buffer layer, n-type (Se-doped) (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P lower cladding layer 2, undoped (Al _0.15 Ga _0.85 ) _0.5 In _{0.5 by} E method
P active layer 3, p-type (zinc-doped) (Al _0.7 Ga _0.3 )
_0.5 In _0.5 P upper clad layer 4 is grown, and p is grown on it.
A type (zinc-doped) (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P and GaP current spreading layer 5 was grown by MOVPE growth.

Next, Zn was evaporated to a thickness of 2 nm on this epitaxial wafer to form a Zn layer 6. Further, the epitaxial wafer is heated to a temperature higher than 420 ° C. 5
The ITO film was formed as the transparent conductive film 8 by heating to 00 ° C. and spraying.

On the upper surface of the epitaxial wafer, a circular p-side electrode (second conductivity type chip upper surface electrode) 9 having a diameter of 125 μm was formed in a matrix by vapor deposition as an upper electrode. For the p-side electrode 9, gold, zinc, nickel, and gold were vapor-deposited in the order of 60 nm, 10 nm, and 1000 nm, respectively.
Further, an n-side electrode (back surface electrode) 10 was formed on the entire bottom surface of the epitaxial wafer. The n-side electrode 10 is made of gold / germanium, nickel, and gold each having a thickness of 60 nm and 10 nm.
nm and 500 nm were vapor-deposited in this order, and then alloying for alloying the electrodes was performed at 430 ° C. for 5 minutes in a nitrogen gas atmosphere.

The ITO film and the epitaxial wafer with electrodes are processed by dicing or the like to obtain a chip size 30.
A 0 μm square light emitting diode chip was manufactured, and then die bonding and wire bonding were performed to manufacture a light emitting diode.

As a result of examining the light emitting characteristics of the light emitting diode of the conventional example, the light emitting output is 2.2 mW and Vf is 1.90 V.
It was -6.07V (at the time of 20 mA energization). The Vf value thus varies from 1.90V to 6.07V because the transparent conductive film is formed at 500 ° C. (that is, 420 ° C. or higher) in the case of the light emitting diode of this conventional example.
The Zn film formed between the uppermost layer of the epitaxial wafer and the transparent conductive film becomes spherical, and a portion without the Zn film is formed in the plane of the epitaxial wafer. Therefore, a semiconductor light emitting device having a very high Vf can be formed. it is conceivable that.

A metal other than Zn was vapor-deposited on the epitaxial wafer to a thickness of 2 nm. In this case, the emission output was 2.2 mW and Vf was 2.01 to 2.05 V (20 mA).
(When energized), and the value of Vf also varied.

[Embodiment 1] Next, as Embodiment 1, FIG.
An epitaxial wafer for a red light emitting diode having an emission wavelength of about 630 nm having the structure shown in was prepared.

An n-type (Se-doped) GaAs buffer layer and an n-type (S) are formed on the n-type GaAs substrate 1 by MOVPE.
e-doped) (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P lower cladding layer 2, undoped (Al _0.15 Ga _0.85 ) _0.5 In _0.5 P active layer 3, p-type (zinc-doped) (Al _0.7 Ga _0.3 ) _0.5 I
An n _0.5 P upper cladding layer 4 is grown, and p-type (zinc-doped) (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P and G are grown thereon.
The aP current dispersion layer 5 was grown by MOVPE growth.

Next, Zn was evaporated to a thickness of 1 nm on the epitaxial wafer to form a Zn layer 6, and Ni was further evaporated to a thickness of 1 nm to form a Ni layer 7. Furthermore, the epitaxial wafer is heated to 500 ° C., and the transparent conductive film 8 is sprayed.
An ITO film was formed.

On the upper surface of the epitaxial wafer, a circular p-side electrode (second conductivity type chip upper surface electrode) 9 having a diameter of 125 μm was formed as an upper electrode by vapor deposition in a matrix. For the p-side electrode 9, gold, zinc, nickel, and gold were vapor-deposited in the order of 60 nm, 10 nm, and 1000 nm, respectively.
Further, an n-side electrode (back surface electrode) 10 was formed on the entire bottom surface of the epitaxial wafer. The n-side electrode 10 is made of gold / germanium, nickel, and gold each having a thickness of 60 nm and 10 nm.
nm and 500 nm were vapor-deposited in this order, and then alloying for alloying the electrodes was performed at 430 ° C. for 5 minutes in a nitrogen gas atmosphere.

The ITO film and the epitaxial wafer with electrodes are processed by dicing or the like to obtain a chip size of 30.
A 0 μm square light emitting diode chip was manufactured, and then die bonding and wire bonding were performed to manufacture a light emitting diode.

As a result of examining the light emitting characteristics of the light emitting diode of Example 1, the light emitting output was 2.2 mW, and Vf was constant at 1.90 ± 0.02 V (at a current of 20 mA). That is, in the case of the light emitting diode of Example 1, even though the transparent conductive film is formed at 500 ° C. (that is, 420 ° C. or higher), there is no variation between elements of the semiconductor light emitting element, and Vf of all elements is Centered around 1.90V ±
The deviation was within 0.02 V, and there was no occurrence of an element with a particularly high Vf. Further, since the formation temperature of the transparent conductive film is as high as 500 ° C. (that is, 420 ° C. or higher), the transparent conductive film also has low resistance.

Example 2 As Example 2, an epitaxial wafer for a red light emitting diode having a structure as shown in FIG. 2 and an emission wavelength of around 630 nm was produced. This is the above Zn
In the region of the layer and the Ni layer, a portion directly below the electrode formed on the transparent conductive layer is formed by omitting a part of the Zn layer and the Ni layer.

The epitaxial growth method by the MOVPE method, the epitaxial structure having the epitaxial layers 1 to 5 and the like are basically the same as those in the above-mentioned conventional example, and ITO is used.
The film forming method, the electrode forming method, and the electrode shape were basically the same as those in the above-mentioned conventional example. Further, the process processing and the wire bonding process were the same as those in the first embodiment.

A resist mask was formed in a matrix on the epitaxial wafer having the above-mentioned epitaxial layers 1 to 5 by photolithography. The size of the portion having the resist mask is a circle having a diameter of 125 μm.

On this epitaxial wafer with a resist mask, a Zn layer 6 having a thickness of 1 nm and a Ni layer 7 having a thickness of 1 nm are formed on the epitaxial wafer by a vapor deposition method, and the resist film is removed.
Zn layer 6 and Ni layer 7 having a diameter of 125 μm in a matrix
An epitaxial wafer with a metal layer in which no ridge was formed was manufactured.

After that, an ITO film as the transparent conductive film 8 is formed, and the circular p-side electrode 9 having a diameter of 1251 μm is substantially aligned with the center of the portion where the Zn layer 6 and the Ni layer 7 are not formed on the ITO film. Similarly, a matrix was formed by vapor deposition. For the p-side electrode 9, gold, zinc, nickel, and gold were vapor-deposited in the order of 60 nm, 10 nm, and 1000 nm, respectively.
Further, on the bottom surface of the epitaxial wafer, the n-side electrode 1
0, and the n-side electrode 10 is made of gold / germanium, nickel, and gold of 60 nm, 10 nm, and 500 nm, respectively.
Then, the alloy that is the alloying of the electrodes is deposited.
It was performed at 430 ° C. for 5 minutes in a nitrogen gas atmosphere.

The ITO film and the epitaxial wafer with electrodes are processed by dicing or the like to obtain a chip size of 30.
A 0 μm square light emitting diode chip was produced.

As a result of examining the light emission characteristics of the light emitting diode of this Example 2, the light emission output was 2.6 mW, and Vf was constant at 1.92 ± 0.02 V (at 20 mA energization). That is, in the case of the light emitting diode of Example 2, although the transparent conductive film is formed at 500 ° C. (that is, 420 ° C. or higher), there is no variation between the semiconductor light emitting elements, and Vf of all the elements is The deviation was within ± 0.02V, and there was no occurrence of an element with a particularly high Vf. In addition, the formation temperature of the transparent conductive film is 500 ° C.
Since it is as high as 420 ° C. or higher, the transparent conductive film also has low resistance.

Comparative Example As a comparative example, an epitaxial wafer for a red light emitting diode having a structure as shown in FIG. 1 and having an emission wavelength of about 630 nm was produced.

The epitaxial growth method by the MOVPE method, the epitaxial structure having the epitaxial layers 1 to 5, and the like are basically the same as those in the first embodiment, and IT
The O film forming method, the electrode forming method, and the electrode shape were basically the same as those in the first embodiment. In addition, process processing,
Same as Example 1.

However, unlike the case of Example 1, regarding the metal formed between the semiconductor layer and the ITO film, the above-mentioned Zn is used.
Instead of the layer 6 and the Ni layer 7, Mg, Be, Ge, Ni
And a light emitting diode was manufactured as the Au compound thereof.

As a result, the light emitting characteristics of the light emitting diode are
Forward operating voltage (at 20mA current) is 1.9 each
It was 5V, 1.94V, 1.97V, 1.94V, and those Au compounds also had 2.0V or less. Further, the light emission output was 2.5 mW or more in all of the above structures.

As is clear from the comparison between the above-mentioned examples and the conventional examples and the comparative examples, by interposing the Zn layer 6 and the Ni layer 7 between the semiconductor layer and the ITO film according to the present invention,
An LED with an ITO film having a high output and a low Vf and a very small Vf variation between elements can be obtained. This gives L
The thickness of the epitaxial layer for ED can be reduced from one fifth to several tenths. This is because the current spreading film has the largest thickness in the epitaxial wafer that constitutes the LED. As a result, the cost of the epitaxial wafer could be reduced significantly.

In the above embodiment, the thicknesses of the Zn layer 6 and the Ni layer 7 are set to 1 nm, but other values can be adopted. However, if the Zn layer 6 inserted between the semiconductor layer and the ITO film is too thin, the effect of Zn is weakened and Vf becomes high. If the Ni layer 7 is too thin, the Zn layer will not be uniform and Vf will vary. Further, if the total thickness of the Zn layer 6 and the Ni layer 7 inserted between the semiconductor layer and the ITO film is too thick, the light absorption in the metal layer becomes large, and the light emission output becomes low. Therefore, the total thickness of the Zn layer, the Ni layer, the Zn layer, and the Ni layer has an optimum value.

FIG. 3 shows the relationship between the total thickness of the Zn layer and Ni layer and the light output, and FIG. 4 shows the relationship between the total thickness of the Zn layer and Ni layer and Vf.

As shown in FIG. 4, if the thickness of each of the Zn layer and the Ni layer is 1 nm or more, the Zn layer becomes uniform and the forward operating voltage Vf does not vary between elements. , The effect of making it as low as conventional (1.90 in FIG. 4)
V or less) is obtained, and Vf decreases as the thickness increases. On the other hand, as shown in FIG. 3, since the light emission output decreases as the Zn layer and the Ni layer become thicker, it is not a good idea to make it too thick in terms of light emission output.
The total layer thickness is 15 nm or less, preferably 10 nm
Hereafter, it is more preferable that the thickness is 7.5 nm or less.

In the above embodiment, the surface electrode and the metal layer have a circular shape. However, the same effect can be obtained even if the surface electrode and the metal layer have different shapes such as a square, a rhombus, and a polygon.

Further, although the transparent conductive film forming method in the conventional example and the embodiment is formed by the spray method, it may be formed by other transparent conductive film forming methods such as the sputtering method and the vapor deposition method. The same effect can be obtained.

[0058]

As described above, according to the present invention, in the LED having the structure in which the transparent conductive film of the metal oxide film is used as the current spreading film, it is possible to reduce the forward operating voltage Vf on the surface of the epitaxial wafer. Zn and Ni as metal layers
Since the laminated structure is provided, the variation in the elements of the semiconductor light emitting element, particularly the generation of the element having a high forward operation voltage Vf, is eliminated, and the formation temperature of the transparent conductive film is increased to reduce the resistance of the transparent conductive film. Therefore, it is possible to obtain an LED with a transparent electrode having a low forward operating voltage Vf and a small variation and a high light emission output.

In addition, IT has a high output, a low forward operation voltage Vf, and a very small variation in Vf between elements.
Since it has become possible to form an LED with an O film, it has become possible to reduce the thickness of the epitaxial layer for an LED from one fifth to several tenths. This is because the current spreading film has the largest thickness in the epitaxial wafer that constitutes the LED. As a result, the cost of the epitaxial wafer could be reduced significantly.

[Brief description of drawings]

FIG. 1 is a sectional view of an LED according to a first embodiment of the present invention.

FIG. 2 is a sectional view of an LED according to an implementation side 2 of the present invention.

FIG. 3 is a graph showing the relationship between the film thickness of Zn and Ni layers and the light emission output.

FIG. 4 is a graph showing the relationship between the film thickness of Zn and Ni layers and Vf.

FIG. 5 is a sectional view of an LED according to a conventional example.

[Explanation of symbols]

1 n-type GaAs substrate (first conductivity type substrate) 2 n-type lower cladding layer (first conductivity type cladding layer) 3 Active layer 4 p-type upper clad layer (second conductivity type clad layer) 5 p-type current spreading layer (second conductivity type current spreading layer) 6 Zn layer 7 Ni layer 8 Transparent conductive film

Claims (8)

[Claims] 1. A light-emitting portion, in which an active layer is sandwiched between a first-conductivity-type cladding layer and a second-conductivity-type cladding layer, is formed on a first-conductivity-type substrate, and a metal oxide film is formed on the light-emitting portion. Forming a transparent conductive layer, and forming an upper electrode on a part of the surface of the transparent conductive layer, and entirely or partly forming an electrode on the surface of the first conductivity type substrate opposite to the surface on which the light emitting section layer is formed. In the semiconductor light emitting element having formed, between the second conductive type clad layer and the transparent conductive layer,
A semiconductor light emitting device, characterized in that a Zn layer and a Ni layer are sequentially laminated. 2. The semiconductor light emitting device according to claim 1, wherein a current diffusion layer of a second conductivity type is formed between the light emitting portion and the Zn layer. 3. The semiconductor light emitting device according to claim 1, wherein the Zn layer and the Ni layer, which are sequentially stacked, are formed in a part of a portion immediately below the electrode formed on the transparent conductive layer. A semiconductor light emitting device characterized by being not formed. 4. The semiconductor light emitting device according to claim 1, wherein the Zn layer and the Ni layer each have a thickness of 1 nm or more, and the Zn layer and the Ni layer have a total thickness of 15 nm. A semiconductor light emitting device characterized by the following: 5. The semiconductor light emitting device according to claim 1, wherein the upper electrode has a circular shape, a rectangular shape, or a shape in which protrusions are formed in a rectangular shape. 6. The semiconductor light emitting device according to claim 3, wherein the regions where the Zn layer and the Ni layer, which are sequentially stacked, are not substantially aligned with the center of the upper electrode, and the center of the electrode is 0.6. The semiconductor light emitting device is characterized by being 1.3 times. 7. The semiconductor light emitting device according to claim 1, wherein the substrate is made of GaAs, and the light emitting portion is AlGaI.
A semiconductor light-emitting device comprising nP or GaInP. 8. A method for manufacturing a semiconductor light emitting device according to claim 1, wherein the transparent conductive layer is formed at a temperature of 420 ° C. or higher.