JP2003257739A - 高周波デバイス - Google Patents
高周波デバイスInfo
- Publication number
- JP2003257739A JP2003257739A JP2002054150A JP2002054150A JP2003257739A JP 2003257739 A JP2003257739 A JP 2003257739A JP 2002054150 A JP2002054150 A JP 2002054150A JP 2002054150 A JP2002054150 A JP 2002054150A JP 2003257739 A JP2003257739 A JP 2003257739A
- Authority
- JP
- Japan
- Prior art keywords
- film
- laminated film
- transmission line
- thin film
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 185
- 230000005540 biological transmission Effects 0.000 claims abstract description 117
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 71
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 59
- 230000005350 ferromagnetic resonance Effects 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims description 249
- 239000010409 thin film Substances 0.000 claims description 93
- 238000010168 coupling process Methods 0.000 claims description 78
- 238000005859 coupling reaction Methods 0.000 claims description 78
- 239000004020 conductor Substances 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 230000008878 coupling Effects 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 230000005316 antiferromagnetic exchange Effects 0.000 abstract description 5
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 42
- 238000010586 diagram Methods 0.000 description 41
- 230000005415 magnetization Effects 0.000 description 39
- 230000001965 increasing effect Effects 0.000 description 30
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 22
- 239000000696 magnetic material Substances 0.000 description 14
- 230000035699 permeability Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000004891 communication Methods 0.000 description 9
- 230000004907 flux Effects 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 238000004904 shortening Methods 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 229910005435 FeTaN Inorganic materials 0.000 description 7
- 230000005672 electromagnetic field Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000005381 magnetic domain Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Coils Or Transformers For Communication (AREA)
- Waveguides (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002054150A JP2003257739A (ja) | 2002-02-28 | 2002-02-28 | 高周波デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002054150A JP2003257739A (ja) | 2002-02-28 | 2002-02-28 | 高周波デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003257739A true JP2003257739A (ja) | 2003-09-12 |
| JP2003257739A5 JP2003257739A5 (enExample) | 2005-06-23 |
Family
ID=28665386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002054150A Pending JP2003257739A (ja) | 2002-02-28 | 2002-02-28 | 高周波デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003257739A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007006466A (ja) * | 2005-05-27 | 2007-01-11 | Commissariat A L'energie Atomique | 電磁ノイズをフィルタするための集積型マイクロエレクトロニクス構成要素、およびそれを備える無線周波数伝送回路 |
| WO2007032149A1 (ja) * | 2005-09-16 | 2007-03-22 | Kyushu University, National University Corporation | 磁性多層膜ドットを用いた高周波デバイス |
| JP2007129061A (ja) * | 2005-11-04 | 2007-05-24 | Taiyo Yuden Co Ltd | 高周波電子部品 |
| JP2008537849A (ja) * | 2005-04-08 | 2008-09-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | オンチップのミリメートル波用途のための集積回路変圧器デバイス |
| JP2008227024A (ja) * | 2007-03-09 | 2008-09-25 | Taiyo Yuden Co Ltd | 高周波用磁性薄膜及びそれを利用した高周波用磁性デバイス |
| JP2010034257A (ja) * | 2008-07-29 | 2010-02-12 | Nec Corp | 伝送線路型キャパシタ |
| JP2011222989A (ja) * | 2010-03-26 | 2011-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2014107413A (ja) * | 2012-11-28 | 2014-06-09 | Alps Green Devices Co Ltd | 磁気素子 |
| WO2015119004A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社村田製作所 | 高周波信号伝送線路及びその製造方法 |
| WO2019220862A1 (ja) * | 2018-05-18 | 2019-11-21 | 株式会社村田製作所 | インダクタおよびその製造方法 |
| JP2022007092A (ja) * | 2020-06-25 | 2022-01-13 | 国立大学法人秋田大学 | コモンモードノイズ抑制部材 |
-
2002
- 2002-02-28 JP JP2002054150A patent/JP2003257739A/ja active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008537849A (ja) * | 2005-04-08 | 2008-09-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | オンチップのミリメートル波用途のための集積回路変圧器デバイス |
| JP2007006466A (ja) * | 2005-05-27 | 2007-01-11 | Commissariat A L'energie Atomique | 電磁ノイズをフィルタするための集積型マイクロエレクトロニクス構成要素、およびそれを備える無線周波数伝送回路 |
| WO2007032149A1 (ja) * | 2005-09-16 | 2007-03-22 | Kyushu University, National University Corporation | 磁性多層膜ドットを用いた高周波デバイス |
| JP2007129061A (ja) * | 2005-11-04 | 2007-05-24 | Taiyo Yuden Co Ltd | 高周波電子部品 |
| JP2008227024A (ja) * | 2007-03-09 | 2008-09-25 | Taiyo Yuden Co Ltd | 高周波用磁性薄膜及びそれを利用した高周波用磁性デバイス |
| JP2010034257A (ja) * | 2008-07-29 | 2010-02-12 | Nec Corp | 伝送線路型キャパシタ |
| US9012908B2 (en) | 2010-03-26 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal oxide film |
| JP2011222989A (ja) * | 2010-03-26 | 2011-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US9425295B2 (en) | 2010-03-26 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9941414B2 (en) | 2010-03-26 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide semiconductor device |
| JP2014107413A (ja) * | 2012-11-28 | 2014-06-09 | Alps Green Devices Co Ltd | 磁気素子 |
| WO2015119004A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社村田製作所 | 高周波信号伝送線路及びその製造方法 |
| JP5880805B2 (ja) * | 2014-02-07 | 2016-03-09 | 株式会社村田製作所 | 高周波信号伝送線路及びその製造方法 |
| US9742051B2 (en) | 2014-02-07 | 2017-08-22 | Murata Manufacturing Co., Ltd. | High-frequency signal transmission line and manufacturing method thereof |
| WO2019220862A1 (ja) * | 2018-05-18 | 2019-11-21 | 株式会社村田製作所 | インダクタおよびその製造方法 |
| JP2022007092A (ja) * | 2020-06-25 | 2022-01-13 | 国立大学法人秋田大学 | コモンモードノイズ抑制部材 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041005 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041005 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071002 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080507 |