JP2003249626A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JP2003249626A JP2003249626A JP2002231587A JP2002231587A JP2003249626A JP 2003249626 A JP2003249626 A JP 2003249626A JP 2002231587 A JP2002231587 A JP 2002231587A JP 2002231587 A JP2002231587 A JP 2002231587A JP 2003249626 A JP2003249626 A JP 2003249626A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- type impurity
- semiconductor memory
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000012535 impurity Substances 0.000 claims description 111
- 238000003860 storage Methods 0.000 claims description 57
- 230000005294 ferromagnetic effect Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 28
- 239000010703 silicon Substances 0.000 abstract description 28
- 239000011229 interlayer Substances 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 79
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 31
- 229920005591 polysilicon Polymers 0.000 description 31
- 238000010586 diagram Methods 0.000 description 22
- 150000004770 chalcogenides Chemical class 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002231587A JP2003249626A (ja) | 2001-12-18 | 2002-08-08 | 半導体記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-384739 | 2001-12-18 | ||
| JP2001384739 | 2001-12-18 | ||
| JP2002231587A JP2003249626A (ja) | 2001-12-18 | 2002-08-08 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003249626A true JP2003249626A (ja) | 2003-09-05 |
| JP2003249626A5 JP2003249626A5 (enrdf_load_stackoverflow) | 2005-10-27 |
Family
ID=28676823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002231587A Pending JP2003249626A (ja) | 2001-12-18 | 2002-08-08 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003249626A (enrdf_load_stackoverflow) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004260162A (ja) * | 2003-02-27 | 2004-09-16 | Sharp Corp | Ｒｒａｍアレイの製造方法及びｒｒａｍ |
| JP2004349504A (ja) * | 2003-05-22 | 2004-12-09 | Hitachi Ltd | 半導体集積回路装置 |
| JP2006019688A (ja) * | 2004-06-30 | 2006-01-19 | Hynix Semiconductor Inc | 相変化記憶素子及びその製造方法 |
| JP2006024911A (ja) * | 2004-06-09 | 2006-01-26 | Sanyo Electric Co Ltd | メモリ |
| JP2006173555A (ja) * | 2004-11-17 | 2006-06-29 | Toshiba Corp | スイッチング素子と線路切り換え装置及び論理回路 |
| KR100733147B1 (ko) | 2004-02-25 | 2007-06-27 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| JP2007329471A (ja) * | 2006-05-18 | 2007-12-20 | Qimonda North America Corp | ドープされた相変化材料を含むメモリセル |
| JP2008218492A (ja) * | 2007-02-28 | 2008-09-18 | Elpida Memory Inc | 相変化メモリ装置 |
| US7638787B2 (en) | 2005-11-14 | 2009-12-29 | Samsung Electronics Co., Ltd. | Phase changeable memory cell array region and method of forming the same |
| JP2010225774A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置、及びそのスクリーニング方法 |
| US7919767B2 (en) | 2006-06-22 | 2011-04-05 | Elpida Memory, Inc. | Semiconductor memory device and fabrication method thereof |
-
2002
- 2002-08-08 JP JP2002231587A patent/JP2003249626A/ja active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004260162A (ja) * | 2003-02-27 | 2004-09-16 | Sharp Corp | Ｒｒａｍアレイの製造方法及びｒｒａｍ |
| JP2004349504A (ja) * | 2003-05-22 | 2004-12-09 | Hitachi Ltd | 半導体集積回路装置 |
| KR100733147B1 (ko) | 2004-02-25 | 2007-06-27 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| US7700430B2 (en) | 2004-02-25 | 2010-04-20 | Samsung Electronics Co., Ltd. | Phase-changeable memory device and method of manufacturing the same |
| US7295463B2 (en) | 2004-02-25 | 2007-11-13 | Samsung Electronics Co., Ltd. | Phase-changeable memory device and method of manufacturing the same |
| JP2006024911A (ja) * | 2004-06-09 | 2006-01-26 | Sanyo Electric Co Ltd | メモリ |
| JP2006019688A (ja) * | 2004-06-30 | 2006-01-19 | Hynix Semiconductor Inc | 相変化記憶素子及びその製造方法 |
| JP2006173555A (ja) * | 2004-11-17 | 2006-06-29 | Toshiba Corp | スイッチング素子と線路切り換え装置及び論理回路 |
| US7638787B2 (en) | 2005-11-14 | 2009-12-29 | Samsung Electronics Co., Ltd. | Phase changeable memory cell array region and method of forming the same |
| US8039298B2 (en) | 2005-11-14 | 2011-10-18 | Samsung Electronics Co., Ltd. | Phase changeable memory cell array region and method of forming the same |
| JP2007329471A (ja) * | 2006-05-18 | 2007-12-20 | Qimonda North America Corp | ドープされた相変化材料を含むメモリセル |
| US7919767B2 (en) | 2006-06-22 | 2011-04-05 | Elpida Memory, Inc. | Semiconductor memory device and fabrication method thereof |
| JP2008218492A (ja) * | 2007-02-28 | 2008-09-18 | Elpida Memory Inc | 相変化メモリ装置 |
| JP2010225774A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置、及びそのスクリーニング方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050801 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050801 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080328 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090526 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091006 |