JP2003246839A - Epoxy resin composition for sealing and single side-sealed semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing which is suitably used for sealing especially single side-sealed semiconductor devices and allows improved inhibition of package warpage upon sealing semiconductors and improved reflow resistance owing to improved adhesion to interposers. <P>SOLUTION: The composition comprises at least one epoxy resin represented by formula (A-1) (wherein G is a glycidyl group; and R1-R6 are identical to or different from each other and are each hydrogen, a methyl group or a t-butyl group) or formula (A-2) (wherein G is a glycidyl group) and a phenol novolac resin of a formula (B) (wherein m is 0 or a positive integer) having a dinuclear content of at most 10 mass% as a hardener. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing epoxy resin composition used for sealing semiconductor elements and the like, and a single-sided sealing type semiconductor device sealed with this sealing epoxy resin composition. It is a thing.

[0002]

2. Description of the Related Art In recent years, in the field of IC packages, which are becoming smaller and thinner, in order to cope with an increase in the number of lead terminals, a semiconductor device is changed from a peripheral package such as SOP or QFP to a BGA (ball grid array). The mainstream is shifting to the area mounting package represented by). The current BGA package has various shapes depending on the connection method between the IC chip and the terminal.

The most mainstream type among them is a type in which a chip and an interposer are connected by a gold wire.
The chip mounting surface is sealed by transfer molding with a sealing epoxy resin composition, and then solder bumps are provided on the back surface of the interposer.

A major problem that has been pointed out in the related art with respect to such a single-sided encapsulation type package is that an encapsulating material composed of an epoxy resin composition for encapsulating a chip and an interposer as a base. It is possible that the package is warped easily due to the large shrinkage amount of the sealing material in the process of cooling to room temperature after completion of the molding because of the bimetal structure in which the layers are bonded together.

Further, as a further serious problem, there is a problem that the reflow resistance and the reliability are deteriorated because the adhesiveness between the encapsulating material composed of the epoxy resin composition for encapsulation and the interposer as the base is low. Can be mentioned.

BGA for coping with such a problem
As a conventional technique for a composition for encapsulation, a glass transition temperature of the encapsulating material after molding is set to be higher than the molding temperature by using a triphenylmethane type epoxy resin, and a cooling process to room temperature after molding is performed. It is known that the shrinkage of the interposer of the encapsulating material is set to the same level and the warpage is reduced.

However, the substrate used as an interposer is further thinned such that the thickness of 0.5 mm is about 0.2 mm or the thickness of 0.1 mm is less than that. With such a thinner interposer, it has become impossible to reduce the warpage by the conventional method of reducing the warpage by using a resin system. Also, the required level of reflow resistance of the package is increasing.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and reduces the molding shrinkage during curing to suppress the occurrence of package warpage during semiconductor encapsulation, and at the same time, to provide an interposer. An epoxy resin composition for encapsulation, which can improve adhesiveness with and improve reflow resistance, and can be suitably used particularly for encapsulation of a single-sided encapsulation type semiconductor device, and this encapsulation epoxy resin. It is an object of the present invention to provide a single-sided sealed semiconductor device sealed with a resin composition.

[0009]

The epoxy resin composition for encapsulation according to the present invention is used as an epoxy resin in an epoxy resin composition for encapsulation containing an epoxy resin, a curing agent, a curing accelerator and an inorganic filler. It contains at least one of those represented by the following structural formulas (A-1) and (A-2), has a structure represented by the following structural formula (B) as a curing agent, and has a binuclear content of 10% by mass. It is characterized by containing the following phenol novolac resin.

[0010]

[Chemical 3]

As the epoxy resin, in addition to the above, the following structural formulas (A-3), (A-4) and (A-5)
It is also preferable to contain at least one of the compounds represented by.

[0012]

[Chemical 4]

The total amount of the epoxy resin having the structure represented by the structural formulas (A-1) and (A-2) is preferably 45 to 100% by mass based on the total amount of the epoxy resin.

Further, it is also preferable to contain a reaction product of tetraphenylphosphonium / tetraphenylborate and a phenol novolac compound as a curing accelerator.

It is also preferable that the imidazole silane is contained in an amount of 0.01 to 1% by mass based on the total amount of the composition.

It is also preferable that the molding shrinkage rate of the cured epoxy resin composition is from -0.1 to 0.1%.

The single-sided sealing type semiconductor device according to the present invention is characterized by being sealed with the above-mentioned sealing epoxy resin composition.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

As the epoxy resin, the above structural formula (A-
One or both of those shown in 1) and (A-2) are contained.

At this time, the total amount of the epoxy resins represented by the structural formulas (A-1) and (A-2) in the total amount of the epoxy resin components blended in the composition is 45-1.
It is preferably in the range of 00% by mass, and in this range, the effects of reducing package warpage and improving reflow resistance, which will be described later, are remarkable.

As the epoxy resin, in addition to the above-mentioned ones, the above structural formulas (A-3), (A-4) and (A) are further added.
Among those shown in -5), one or two or more may be contained, and in this case, further reduction of package warpage and improvement of reflow resistance can be achieved.

In addition to the above-mentioned epoxy resin, an appropriate epoxy resin may be used in combination, and for example, orthocresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol type epoxy resin,
A biphenyl type epoxy resin, a dicyclopentadiene type epoxy resin, etc. can be contained.

The curing agent contains a phenol novolac resin represented by the above structural formula (B), and further contains a binuclear compound (having two benzene rings in one molecule) in the phenol novolac resin. That is, that is, the value of m in the formula is 0) is not included, or the ratio is set to 10% by mass or less. That is, the proportion of the binuclear body is set to 0 to 10 mass%. At this time, when the binuclear compound is blended in the above-mentioned phenol novolac resin and the proportion thereof exceeds 10% by mass, the glass transition temperature (Tg) of the epoxy resin composition for sealing is lowered. , Not preferable.

The phenol novolac resin is
In order to reduce the viscosity of the encapsulating epoxy resin composition,
In the structural formula (B), the upper limit of the value of m is preferably 10.

As the curing agent, any other appropriate curing agent can be used in combination. For example, a general phenol novolac resin (provided that a binuclear body having a value of m in the structural formula (B) of 0 is Except), naphthalene skeleton-containing phenol resin, dicyclopentadiene type phenol resin, phenol aralkyl resin and the like can be used in combination.

Here, the proportion of the phenol novolac resin of the structural formula (B) in which the proportion of the binuclear body is 0 to 10 mass% in the total amount of the curing agent is preferably 20 to 100 mass%, and It is more preferably 50 to 100% by mass. That is, when a plurality of types of curing agents are used in combination, the proportion of the phenol novolac resin of structural formula (B) in which the proportion of the binuclear body is 0 to 10% by weight in the total amount of the curing agents is 20% by weight or more. Is preferable, and more preferably 50% by mass or more.

The compounding amount of the curing agent in the composition is appropriately set, but the stoichiometric equivalent ratio of the curing agent to the epoxy resin is 0.8 to 1 with respect to the epoxy resin.
It is preferably in the range of 1.3.

In the present invention, by using the above-mentioned combination of the epoxy resin and the curing agent, the glass transition temperature of the cured product of the composition can be improved, and the warpage of the package during the production of the semiconductor device can be improved. Can be reduced. In addition, the coefficient of linear expansion of the composition can also be reduced, whereby the rate of molding shrinkage at the time of molding can be reduced and the warpage of the package at the time of manufacturing a semiconductor device can be further reduced. Furthermore, at the time of semiconductor encapsulation, the adhesion between the encapsulant formed from the cured epoxy resin composition for encapsulation and the interposer, chip, etc. is improved, and the occurrence of peeling after the reflow treatment is prevented. It can be suppressed. In particular, when one or more of the epoxy resins represented by the structural formulas (A-3), (A-4) and (A-5) are contained as the epoxy resin as described above, further reduction of the package warp is further reduced. It is possible to improve the reflow resistance.

In addition, when the curing accelerator contains a reaction product of tetraphenylphosphonium / tetraphenylborate and a phenol novolac compound, it is possible to further improve the package warpage of the one-side sealed semiconductor device, preferable. This reaction product has a significantly higher activity as a curing accelerator than that of tetraphenylphosphonium / tetraphenylborate alone, and is a suitable material as a curing accelerator for the epoxy resin composition for encapsulation. Further, by using such a highly active curing accelerator, the degree of curing after the composition is molded and before after-cue is increased, and therefore, the occurrence of warpage of the package of the semiconductor device is particularly caused when after-curing is performed. It can be prevented.

When such a curing accelerator is used,
It is important to react tetraphenylphosphonium tetraphenylborate with the phenol novolac compound, not simply to mix them. The reaction conditions are, for example, a temperature of about 150 to 200 ° C. and tetraphenylphosphonium tetraphenylborate. The phenol novolac compound is stirred and stirred until the white turbidity becomes uniform and transparent at the initial stage of stirring to obtain a reaction product.
The mixing ratio of the tetraphenylphosphonium tetraphenylborate and the phenol novolac resin at the time of reaction is not particularly limited, but the tetraphenylphosphonium tetraphenylborate is 5 to 5 parts by weight with respect to 100 parts by weight of the phenol novolac compound. It is preferably about 40 parts by weight. Further, as the phenol novolac compound referred to here, a phenol novolac resin represented by the above formula (B) can be used. In this case, the value of m in the formula is not particularly limited, but the value of m is 1 The trinuclear body is 45% by weight or more of the whole, and the value of m is 3
It is preferable that the content of the above five or more nuclei is 40% by weight or less of the whole from the viewpoint of uniform mixing with other components when used as a curing accelerator.

As the curing accelerator, in addition to the reaction product of the above-mentioned tetraphenylphosphonium / tetraphenylborate and the phenol novolac compound, organic phosphorus compounds such as triphenylphosphine and trimethylphosphine, 2-methylimidazole, 2- Imidazoles such as phenyl-4-methylimidazole and 2-phenylimidazole, tertiary amines such as 1,8-diazabicyclo (5,4,0) undecene-7, triethanolamine and benzyldimethylamine, and the like, Appropriate materials can be blended.

These curing accelerators may be used alone or in combination of two or more.

The amount of the curing accelerator blended should be 0.03 to 2.0 mass% with respect to the total amount of the composition in order to ensure good moldability during sealing molding. Preferably, if it is less than this range, gelation time becomes long and workability may be deteriorated due to a decrease in rigidity during curing, and if it exceeds this range, curing progresses during molding and unfilling occurs. There is a risk.

When a compound of tetraphenylphosphonium / tetraphenylborate and a phenol novolac resin is used as a curing accelerator, in order to obtain the above effects, tetraphenylphosphonium / tetraphenyl in all curing accelerators is used. The ratio of the compound of borate and phenol novolac resin is 50 to 100% by mass.
It is preferable that

As the inorganic filler, any suitable one applicable to the epoxy resin composition for sealing is used, and examples thereof include fused silica, crystalline silica, alumina, silicon nitride, aluminum nitride and the like. The compounding amount of this inorganic filler is appropriately set, but preferably the linear expansion coefficient (α1) of the encapsulating epoxy resin composition is 0.6 × 10 ⁻⁵ or more.
Is intended to be a ^{1.6 × 10 -5 (1 / ℃} ), in this case, the difference in linear expansion coefficient between the interposer 2 is an epoxy resin composition and a base material for sealing is reduced,
Further, the occurrence of warp can be reduced.

Further, more preferably, the compounding amount of the inorganic filler is adjusted so that the molding shrinkage of the encapsulating epoxy resin composition is in the range of 0.1 to -0.1%.

The term "molding shrinkage" used herein means JIS K6.
911 5.7, and the molding conditions at this time are 170 ° C., 6.9 MPa,
This is transfer molding under the condition of 120 seconds.

When the molding shrinkage ratio of the epoxy resin composition for encapsulation is adjusted in the range of 0.1 to 0.1% by adjusting the compounding amount of the inorganic filler as described above, the sealing It is possible to further suppress the occurrence of package warpage during sealing and molding of the epoxy resin composition for stopping, and to maintain good demolding property at the time of molding, and the value of this molding shrinkage rate is −0. If the value becomes more negative than 1%, it may be difficult to release from the mold during molding.
If it exceeds 0.1%, the package warp tends to increase.

Further, it is preferable to add imidazole silane to the composition. In this case, the adhesion between the cured product of the composition and gold plating is improved, and in particular, the interposer having a conductor circuit plated with gold is used. When used for sealing a semiconductor device using, the reflow resistance can be improved. When imidazole silane is blended, the blending amount is preferably 0.01 to 1% by mass with respect to the total amount of the composition. As this imidazole silane, for example, one represented by the following general formula (C) is used.

[0040]

[Chemical 5]

In the epoxy resin composition for sealing,
In addition to the above components, a release agent, a phosphorus-based flame retardant, a bromine compound, a flame retardant such as antimony trioxide, carbon black, an appropriate additive such as a colorant such as an organic dye may be blended. .

In preparing the encapsulating epoxy resin composition of the present invention, for example, the above-mentioned components are blended in a predetermined amount, uniformly mixed with a mixer or the like, and then kneaded with a heating roll, a kneader or the like. At this time, there is no particular limitation on the mixing order of the components. Further, a powdery epoxy resin composition for encapsulation can be obtained by pulverizing in kneading,
Further, this can be tableted to obtain a tablet-like epoxy resin composition for sealing.

The epoxy resin composition for encapsulation thus obtained can be used for encapsulation of semiconductor devices, and is particularly preferably used for encapsulation of single-sided encapsulation type semiconductor devices. . In this case, the molding shrinkage during curing is reduced, and the occurrence of package warpage can be reduced. Further, at the time of semiconductor encapsulation, the adhesion between the encapsulant formed from the cured product of the encapsulating epoxy resin composition and the interposer, the chip, etc. is improved, and the occurrence of peeling after the reflow treatment is suppressed. can do.

An example of manufacturing a single-sided sealing type semiconductor device using the above sealing epoxy resin composition will be described with reference to FIGS.

Examples of the interposer 2 include a printed wiring board made of a resin substrate such as a glass-based bismaleimide resin substrate and a glass-based epoxy resin substrate. As the chip 3 (semiconductor element), a semiconductor bare chip such as a silicon bare chip is used.

The chip 3 is mounted on one surface of the interposer 2, and the electrical connection between the chip 3 and the circuit on the interposer 2 at this time can be performed by flip chip bonding or wire bonding bonding. .

If there is a gap between the mounted chip 3 and the interposer 2, an underfill may be provided if necessary.

Next, the epoxy resin composition for encapsulation described above is cured and molded, whereby one surface of the interposer 2 on which the chip 3 is mounted is covered with the encapsulating material 4 so as to cover the chip 3.
To form. Curing and molding of this epoxy resin composition for encapsulation can be carried out by transfer molding or the like, and molding conditions at this time are 170 to 185 ° C. and 6. depending on the composition.
Molding is preferably performed for 90 to 120 minutes under a heating and pressurizing condition of 5 to 10 MPa.

Further, after molding, it is preferable to further perform after-curing. At this time, for example, under conditions of 175 degrees, 3
After-curing is performed by heating for 60 minutes.

After the encapsulating material 4 is formed in this manner, solder bumps such as solder balls may be provided on the other surface of the interposer 2 as required to obtain the single-sided encapsulating semiconductor device 1 such as BGA. it can.

[0051]

EXAMPLES The present invention will be described in detail below with reference to examples.

For each of the examples and comparative examples, the components shown in Table 1 were blended, thoroughly kneaded with a mixer, and further kneaded with a heating roll for 5 minutes to obtain a sealing epoxy resin composition.

The details of the compounds in Table 1 are as follows. -Orthocresol novolac type epoxy resin: Sumitomo Chemical Co., Ltd., product number "ESCN195XL" -Multifunctional epoxy resin: Nippon Kayaku Co., Ltd., "EPP
N501HY "-Epoxy resin having structure of formula (A-1): R in formula
1 to R6 are methyl groups-Epoxy resin having a structure of formula (A-3): manufactured by Mitsui Chemicals, Inc., product number "VG3010L" -Epoxy resin having a structure of formula (A-4): manufactured by Sumitomo Chemical Co., Ltd. , Product number "ESLV210", R in the formula
1, R2 is a methyl group-epoxy resin having a structure of formula (A-5): Nippon Steel Chemical Co., Ltd., product number "ESLV80XY" -General phenol novolac resin: Meiwa Kasei Co., product number "H-1" , Binuclear content 15% by weight Phenol novolac resin having the structure of formula (B):
Manufactured by Meiwa Kasei Co., Ltd., product number “DL-92”, binuclear content 4% by weight, m = 0 to 10-imidazole silane: represented by the general formula (C), wherein R1 is hydrogen and R2 is Hydrogen and R3 to R5 are methoxy groups. TPPK-A is a reaction product of tetraphenylphosphonium tetraphenylborate and a phenol novolac compound, and 25 parts by weight of tetraphenylphosphonium tetraphenylborate and a trinuclear body. Content ratio of 6
Phenol novolac resin 75 represented by the formula (B) having a content of 9.7% by weight and a content of pentanuclear or higher is 4.6% by weight.
2 parts by weight under a nitrogen atmosphere at 170 to 180 ° C.
Heat and stir for hours to obtain a uniform transparent melt, then cool,
The one obtained by crushing was used.

(Evaluation of reflow resistance) A FR5 type laminated plate (bismaleimide triazine resin substrate) of 35 mm × 35 mm × 0.4 mm was used as an interposer, and a BGA package was formed by this interposer in accordance with the JEDEC evaluation method. It was made.

At this time, a chip having a size of 7.6 mm × 7.6 mm is formed on one surface of the interposer on which the circuit having gold plating is formed and the solder resist film is formed.
A TEG for evaluation of 0.35 mm was mounted by solder bump connection.

Furthermore, on one surface of the interposer, the epoxy resin compositions for encapsulation of Examples and Comparative Examples were used,
After transfer molding under the conditions of 170 ° C., 6.9 MPa, 120 seconds, after-curing is performed under the conditions of temperature 175 ° C., time 6 hours, and dimensions in plan view are 30 mm × 30 m.
A chip having a thickness of m and a thickness of 0.8 mm was formed to seal the chip.

The semiconductor device thus obtained was pre-dried at 125 ° C. for 24 hours and then placed in a thermo-hygrostat at 85.
A moisture absorption treatment of exposing to an atmosphere of ° C / 60% RH for 168 hours was performed, and a reflow treatment was further performed at 240 ° C.

The inside of the encapsulating material of the semiconductor device after this treatment was subjected to an ultrasonic microscope (manufactured by Canon Inc., product number "M-7".
00II "), and the presence or absence of peeling from the interface between the encapsulant and the chip, the interface with the interposer, and the interface of the gold-plated portion was confirmed.

(Evaluation of Package Warp) In the same manner as in the reflow resistance evaluation, a semiconductor device for evaluation was formed by using the epoxy resin compositions for encapsulation of Examples and Comparative Examples. At this time, two types of interposers were used, one having a thickness of 0.5 mm and the other having a thickness of 0.1 mm.

The surface warpage of the sealing material of this semiconductor device was measured using a surface roughness meter. At this time, the measurement was performed at six points indicated by the arrows in FIG.

(Measurement of glass transition temperature) The epoxy resin compositions for encapsulation of each Example and each Comparative Example were molded under the same conditions as the molding conditions of the encapsulant in the evaluation of reflow resistance, and the obtained curing was performed. The glass transition temperature (Tg) of the product was determined from the bending point of the obtained expansion curve using a TMA measuring device (“TAS200” manufactured by Rigaku Co., Ltd.).

(Evaluation of molding shrinkage ratio) JIS K6911
The molding shrinkage rate during transfer molding of the encapsulating epoxy resin compositions in each of the examples and comparative examples was measured by the method specified in 5.7. At this time, the molding condition is temperature 1
The temperature was 75 ° C., the pressure was 6.9 MPa, and the molding time was 120 seconds.

The above results are shown in Table 1.

[0064]

[Table 1]

According to these results, Examples 1 to 8 have a high glass transition temperature and a low molding shrinkage, the package warpage is reduced as compared with Comparative Examples 1 to 4, and the resistance to The reflow property is also improved as compared with Comparative Examples 1 to 4.

[0066]

As described above, the encapsulating epoxy resin composition according to the present invention is used as an epoxy resin in an encapsulating epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator and an inorganic filler. It contains at least one of the compounds represented by the structural formulas (A-1) and (A-2), has the structure represented by the structural formula (B) as a curing agent, and the proportion of the binuclear body is 10% by mass. Since it contains the following phenol novolac resin, the glass transition temperature of the cured product can be improved, the occurrence of package warpage when used for semiconductor encapsulation can be reduced, and the linear expansion coefficient of the composition can be reduced. Can be reduced to reduce the molding shrinkage rate during curing, which can further reduce the occurrence of package warpage. In which it can be suitably used in the developing. Further, at the time of semiconductor encapsulation, the adhesion between the encapsulant formed from the cured product of the encapsulating epoxy resin composition and the interposer, the chip, etc. is improved, and the occurrence of peeling after the reflow treatment is suppressed. Is what you can do.

As the epoxy resin, in addition to the above, the above structural formulas (A-3), (A-4) and (A-
By including at least one of the compounds shown in 5), it is possible to further reduce the molding shrinkage and improve the adhesion to the interposer, the chip and the like.

When the total amount of the epoxy resin having the structure represented by the structural formulas (A-1) and (A-2) is set to 45 to 100% by mass based on the total amount of the epoxy resin, the above-mentioned results are obtained. The reduction of molding shrinkage and the improvement of the adhesion to the interposer, the chip and the like can be particularly effectively exhibited.

When a reaction product of tetraphenylphosphonium / tetraphenylborate and a phenol novolac compound is contained as a curing accelerator, the curability is improved and the occurrence of package warpage when used for semiconductor encapsulation is further improved. It can be reduced.

When imidazole silane is contained in an amount of 0.01 to 1 mass% with respect to the total amount of the composition, a sealing material formed from a cured product of the epoxy resin composition for sealing during semiconductor encapsulation, The adhesion with gold plating is improved, and the occurrence of peeling after the reflow treatment can be further suppressed.

When the molding shrinkage of the cured epoxy resin composition is set to -0.1 to 0.1%, warpage of the package occurs when it is used for semiconductor encapsulation. Can be further reduced.

Further, since the single-sided sealing type semiconductor device according to the present invention is sealed with the above-mentioned sealing epoxy resin composition, the occurrence of package warpage can be reduced, and the sealing material
The adhesiveness with the interposer, the chip and the like is improved, and the occurrence of peeling after the reflow treatment can be suppressed.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of the configuration of a single-sided sealed semiconductor device.

FIG. 2 is a plan view of FIG.

[Explanation of symbols]

1 Single sided semiconductor device 2 Interposer 3 chips 4 Sealant

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/29 H01L 23/30 R 23/31 F term (reference) 4J002 CC04X CD05W CD07W DE147 DF017 DJ007 DJ017 EN066 EU096 EU116 EW116 EW176 EX078 FD017 FD14X FD156 FD208 GQ01 GQ05 4J036 AA05 AC02 AD01 AD04 AD08 AD10 AD12 AD15 DC10 DC12 DC40 DC46 DD07 DD08 FA03 FA04 FA05 FB08 GA04 JA07 KA01 KA03 4M109 AA01 CA21 EB02 EB06 EC02

Claims (7)

[Claims] 1. A sealing epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, wherein the epoxy resin has the following structural formulas (A-1) and (A):
-2) containing at least one of those shown in
An epoxy resin composition for encapsulation, which has a structure represented by the following structural formula (B) as a curing agent and contains a phenol novolac resin having a binuclear ratio of 10 mass% or less. [Chemical 1] 2. The following structural formula (A-
The epoxy resin composition for encapsulation according to claim 1, wherein the epoxy resin composition for encapsulation comprises at least one selected from the group consisting of 3), (A-4) and (A-5). [Chemical 2] 3. The total amount of epoxy resin having a structure represented by structural formulas (A-1) and (A-2) is 45 to 100% by mass based on the total amount of epoxy resin. The epoxy resin composition for encapsulation according to 1 or 2. 4. The epoxy for encapsulation according to claim 1, which comprises a reaction product of tetraphenylphosphonium / tetraphenylborate and a phenol novolac compound as a curing accelerator. Resin composition. 5. The epoxy resin composition for encapsulation according to claim 1, which contains 0.01 to 1% by mass of imidazole silane with respect to the total amount of the composition. 6. The molding shrinkage ratio during molding of the cured product is -0.1.
It is 0.1%, The epoxy resin composition for sealing in any one of Claim 1 thru | or 5 characterized by the above-mentioned. 7. A single-sided encapsulated semiconductor device, which is encapsulated with the epoxy resin composition for encapsulation according to any one of claims 1 to 6.