JP2003243579A - Package for semiconductor element storage and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To normally and stably operate a semiconductor element for a long time by efficiently radiating the heat of the semiconductor element to the outside and improving transmission characteristics of a high frequency signal by strengthening and stabilizing the ground potential of the semiconductor element. <P>SOLUTION: A substrate 2 having a mount part 2a for mounting a semiconductor element 1 on its upper surface has a metallocarbon complex A formed with a plurality of through conductors 2b impregnating a carbonic base material (m) internally diffusing the aggregate of unidirectional carbon fibers (1) with a metal component (n) containing at least one kind of Ag, Ti, Cr, Zr and W in 0.2-10 wt.% and Cu in 90-99.8 wt.% and filling a through hole passing through upper and lower surfaces with copper in a portion positioned in the mount part 2a, copper layers X formed on the upper and lower surface of the complex and metal plating layers (b) stuck on the surfaces of the copper layers X and the lateral sides of the metallocarbon complex A. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an LSI and an FET.
The present invention relates to a semiconductor element housing package and a semiconductor device for housing a semiconductor element such as (Field Effect Transistor).

[0002]

2. Description of the Related Art A conventional semiconductor element housing package (hereinafter, also referred to as a semiconductor package) is shown in FIGS.
00-150746)). When this semiconductor package is used as an optical semiconductor package, a translucent member as a condenser lens, an optical fiber fixing member, and the like are provided, but these will be omitted and described below.

This semiconductor package is a substantially rectangular base having a mounting portion 102a on which the semiconductor element 101 is mounted.
A frame provided with an input / output terminal mounting portion 103a, which is formed of a through hole or a cutout portion, and is joined to the upper surface of the base 102 by a brazing material such as silver solder so as to surround the mounting portion 102a. It has a body 103 and an input / output terminal 105 fitted to the mounting portion 103a. The input / output terminal 105 is formed such that the metallized layer 105a is electrically connected to the inside and the outside of the frame 103, and the lead terminal 106 joined to an external electric circuit is formed on the metallized layer 105a outside the frame 103 with silver solder or the like. It is brazed with brazing material. In addition, the seal ring 104 has a frame body 1 that is substantially flush with the frame 1.
03 The upper surface and the upper surface of the input / output terminal 105 are joined with a brazing material such as silver brazing, and function as a joining medium when seaming and brazing a lid (not shown) to the semiconductor package.

The substrate 102 is made of a unidirectional carbon fiber composite material in which unidirectional carbon fibers arranged in one direction from the upper surface to the lower surface are bonded with carbon. The unidirectional carbon fiber composite material has an extremely low elastic modulus in the lateral direction (direction perpendicular to the direction of the unidirectional carbon fiber) and a thermal expansion coefficient of about 7 × 10.
^-6 / ° C, and chromium (Cr) -iron (F
e) a first layer made of an alloy layer and a second layer made of copper (Cu)
A metal layer having a three-layer structure of a layer and a third layer composed of an Fe-Ni (nickel) -Co (cobalt) alloy layer is deposited. As a result, the coefficient of thermal expansion in the lateral direction is 10 × 10 ^-6 ~
Adjusted to 13 × 10 ^-6 / ° C.

The elastic modulus in the longitudinal direction (direction of the unidirectional carbon fiber) of the substrate 102 is high because the elastic modulus in the direction of the unidirectional carbon fiber is very high, and the coefficient of thermal expansion in the longitudinal direction is one. Coefficient of thermal expansion in the direction of directional carbon fibers (mostly 0-5 × 10 ^-6
/ ° C). Further, the substrate 102 has a very high thermal conductivity of about 300 W / m · K or more in the vertical direction, whereas the thermal conductivity of the horizontal direction has a large number of pores between the unidirectional carbon fibers. About 30W / mK
It is very low as below, and the thermal conductivity is greatly different in the vertical and horizontal directions.

Such a base 102 functions as a so-called heat dissipation plate that efficiently transfers the heat generated during the operation of the semiconductor element 101 to the heat sink by being screwed and fixed in close contact with the heat sink of the external electric circuit board. To do.

Then, after mounting and fixing the semiconductor element 101 on the semiconductor package having the base body 102, the semiconductor element 101 and the metallized layer 105a are electrically connected by a bonding wire, and the semiconductor element 101 is hermetically sealed by a lid. By stopping, the semiconductor device as a product is obtained. The semiconductor element 101 operates by an electric signal input from an external electric circuit.

[0008]

However, in recent years,
When the amount of heat generated by the semiconductor element 101 is extremely large, the heat is generated in the conventional semiconductor package by the mounting portion 102a on the upper surface of the base 102.
The heat is transmitted only directly under the
The vacant space (internal space) formed by 102 and the frame body 103 is easily stored with heat, and as a result, the operability of the semiconductor element 101 is deteriorated,
There is a problem that the semiconductor element 101 is thermally destroyed.

Further, the Cr-Fe alloy layer of the first layer is joined by mutual diffusion of the Fe component with the carbon (C) in the unidirectional carbon fiber and the Cu layer of the second layer. In these diffusion layers, the heat transfer efficiency from the Cr—Fe alloy layer to carbon was deteriorated, and the heat transfer efficiency from the Cu layer to the Cr—Fe alloy layer was lowered. Further, the thermal conductivity of the Cr-Fe alloy layer itself is as low as about 15 to 20 W / mK.
Mainly for these reasons, the heat transfer efficiency in the longitudinal direction and the transverse direction of the substrate 1 was lowered.

Therefore, the present invention has been completed in view of the above problems, and an object of the present invention is to efficiently heat the semiconductor integrated circuit device such as IC and LSI or the semiconductor device such as FET outside the semiconductor package, for example. The purpose is to transmit the heat to the heat sink of the external electric circuit board to make the temperature of the semiconductor element proper during operation, and to operate the semiconductor element normally and stably for a long period of time.

[0011]

A semiconductor package according to the present invention has a base having a mounting portion for mounting a semiconductor element on an upper surface thereof, and an upper surface of the base which is joined so as to surround the mounting portion. In a package for storing a semiconductor element, which comprises a frame body in which a mounting portion for an input / output terminal formed of a through hole or a cutout portion is formed, and an input / output terminal fitted in the mounting portion, the base is At least one of silver, titanium, chromium, zirconium, and tungsten is added to the carbonaceous base material in which the aggregate of unidirectional carbon fibers is dispersed.
There are a plurality of penetrating conductors which are impregnated with a metal component containing 2 to 10% by weight and 90 to 99.8% by weight of copper and copper is filled in through holes penetrating between the upper and lower surfaces in the portion located in the above-mentioned mounting portion. A metal-carbon composite formed, a copper layer formed on the upper and lower surfaces of the metal-carbon composite, and a metal plating layer deposited on the surface of the copper layer and the side surface of the metal-carbon composite. It is characterized by doing.

According to the present invention, according to the above constitution, the metal-carbon composite is composed of the carbonaceous base material, the aggregate of the unidirectional carbon fibers, and the metal component containing copper as a main component, which is impregnated at high temperature and high pressure. , The surface condition becomes very fine. Further, since the copper of the through conductor and the copper layers formed on the upper and lower surfaces of the metal-carbon composite are integrated at their interfaces, the semiconductor element can be grounded sufficiently. Thus, the semiconductor element can be reliably attached to the mounting portion of the base body for a long period of time, and the ground potential of the semiconductor element is strengthened and stabilized to reduce the transmission loss of the high frequency signal. It can be used as a storage package.

Further, since the copper layers on the upper and lower surfaces of the metal-carbon composite and the copper of the through conductor are integrally formed at the interface between them, the heat of the semiconductor element is transmitted through the copper layer and the copper of the through conductor. It can be diffused to the outside extremely quickly, and the semiconductor element can be normally and stably operated for a long period of time. Furthermore, since the copper impregnated on the surface of the metal-carbon composite and the copper layer are integrated at their interface, the copper layer is firmly bonded to the metal-carbon composite without interposing a metal plating layer or metal foil. it can. Therefore, it is not necessary to interpose an Fe-based metal film such as an Fe-Ni-Co alloy that is bonded by diffusion bonding with carbon and Cu between the Cu layer and the metal-carbon composite, and the manufacturing process is greatly reduced. It is possible to improve the production efficiency.

Further, the strain due to the thermal expansion of the copper layer is suppressed by the metal-carbon composite so as to approximate the strain due to the thermal expansion of the metal-carbon composite, and the thermal expansion coefficient close to the thermal expansion coefficient of the metal-carbon composite. It is possible to bond the semiconductor element having the above to the upper surface of the base. As a result, the heat of the semiconductor element is efficiently dissipated to the outside through the copper layer, the copper in the through conductor, and the metal-carbon composite impregnated with the metal component containing copper as the main component.

Further, the copper impregnated in the metal-carbon composite is exposed on the side surface of the metal-carbon composite, and a metal plating layer of Ni, Cu or the like can be deposited on the side surface of the metal-carbon composite with high reliability. That is, the copper exposed on the side surface reinforces the weak bonding force at the interface between the metal plating layer and the carbon fiber, and the side surface of the substrate is densified. Can be made extremely small. As a result, the metal plating layer is less likely to peel off from the metal-carbon composite, and the oxidation of the metal component can be effectively prevented.

In the package for housing a semiconductor device of the present invention, preferably, the metal-carbon composite has a thickness of 500 to 1
500 μm and the thickness of the copper layer is 200-650 μm
The total of the cross-sectional areas of the plurality of through conductors is 45 to 75% of the area of the lower surface of the semiconductor element, and the through conductors are provided at substantially constant intervals.

The package for housing a semiconductor device of the present invention is
With the above structure, the semiconductor element can be mounted and fixed on the base body more reliably and firmly, and the heat transfer efficiency from the semiconductor element to the base body becomes extremely good, and the metal-carbon composite is used as a part of the base body. Therefore, the weight of the base can be reduced. Further, since the through conductor filled with copper is formed uniformly in the above cross-sectional area, the ground potential of the semiconductor element is strengthened, the transmission loss of the high frequency signal input to and output from the semiconductor element is reduced, and the external It is possible to realize a lightweight package for housing a semiconductor element in which the influence of an electric field can be made extremely small. In addition, the copper filled in the through conductor is
Since it is formed at the same time when the copper layers on the upper and lower surfaces of the metal-carbon composite are formed, the number of defects is extremely small, and when the metal ink mainly composed of resin and solvent is filled by a printing method or the like. Heat transfer efficiency of 1.2 to 1.5 times or more is obtained.

The semiconductor device of the present invention includes a package for storing a semiconductor element of the present invention, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminals, and the frame body. It has a lid attached to the upper surface.

According to the semiconductor device of the present invention having the above-mentioned structure, the base is impregnated with the metal component containing Cu as the main component in the carbonaceous base material and the Cu layers are formed on the upper and lower surfaces. When a pressing force or a compressive stress generated when the screw is attached to the external device is applied to the surface of the base, the base is less likely to be crushed by the pressing force or the compressive stress. Therefore, when screwed to an external electric circuit board such as a mother board, the base body is crushed in the thickness direction to loosen the tightening, resulting in inadequate tight fixing, and the problem that heat dissipation to the outside is deteriorated is solved. To be done. Further, since the penetrating conductor filled with copper is formed, the groundability can be improved without significantly increasing the weight, and the transmission loss of the high frequency signal can be reduced.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION The semiconductor element housing package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of a semiconductor package of the present invention.
2 is a sectional view of the semiconductor package, and FIG. 2 is a partially enlarged sectional view of the base of the semiconductor package of FIG.

In FIG. 1, A is a metal-carbon composite, X is a copper layer formed on the upper and lower surfaces of the metal-carbon composite A, 2 is a metal-carbon composite A, a through conductor 2b, a copper layer X and a metal plating layer. It is a substrate made of b. Further, 3 is a frame, 4 is a seal ring, 5 is an input / output terminal, and 7 is a lid. The base body 2, the frame body 3, the seal ring 4, the input / output terminal 5 and the lid body 7 basically constitute a container for housing the semiconductor element 1 therein.

In FIG. 2, l is unidirectional carbon fiber, m is carbonaceous base material, n is silver (Ag), titanium (T
i), chromium (Cr), zirconium (Zr), and tungsten (W), at least one of which is 0.2 to 10% by weight.
And a metal component A containing 90 to 99.8% by weight of Cu, A is a metal-carbon composite, and an aggregate of unidirectional carbon fibers 1 is dispersed in a carbonaceous base material m impregnated with the metal component n. . Then, the copper layer X is formed on the upper and lower surfaces of the metal-carbon composite A and on the upper and lower ends of the through conductor 2b filled with copper.
b is formed so as to be integrated with the copper on the upper and lower ends of the copper layer X
On the surface of the metal and the side surface of the metal-carbon composite A.
The substrate 2 is formed by depositing the.

The metal-carbon composite A composed of the unidirectional carbon fiber 1, the carbonaceous base material m and the metal component n is produced, for example, by the following steps [1] to [5].

[1] A block in which a bundle of unidirectional carbon fibers 1 is bonded with carbon is crushed into small aggregates of small unidirectional carbon fibers 1, and the aggregates of crushed unidirectional carbon fibers 1 are crushed. Are collected and immersed in a solution of a thermosetting resin such as a phenol resin in which fine powder such as solid pitch or coke is dispersed. In addition, the size of the small block obtained by crushing the block is about 0.1 to 1 mm on a side converted to a cube.
It is a degree.

[2] This is dried and a predetermined pressure is applied and heated to cure the thermosetting resin portion.

[3] Phenol resin and pitch or coke fine powder are carbonized by firing at a high temperature in an inert atmosphere to obtain a carbonaceous base material m. The carbonaceous base material m itself has a large thermal conductivity of 200 to 300 W / m · K and also functions as a heat transfer path for heat of the semiconductor element 1.

[4] On the other hand, Ag, T
At least one selected from i, Cr, Zr, and W is added, and 0.2 to 10% by weight of at least one selected from Ag, Ti, Cr, Zr, and W and 9% of Cu are added.
A block was obtained by impregnating a carbonaceous base material m with a metal component n (liquid) containing 0 to 99.8% by weight under high temperature and high pressure. The impregnated metal component n is a lump or a thin plate,
It will be dispersed in the carbonaceous base material m. This block is cut out into a plate shape to prepare a plate that becomes the metal-carbon composite A. The plate has a thickness of, for example, about 500 to 1500 μm, and a length × width in a plan view of about 100 mm square.

[5] A plurality of through holes are formed in the central portion of this plate by drilling, and processed into a desired shape such as a substantially quadrangle to produce a metal-carbon composite A.

The metal carbon composite A has a thickness of 300 on the upper and lower surfaces.
By stacking copper plates having a thickness of about 500 μm and impregnating the through holes with copper under high temperature and high pressure, the base 2 having the copper layer X and the through conductors 2b formed therein is manufactured. As a result, the upper and lower ends of the penetrating conductor 2b are integrated with the copper layer X. Further, on the surface of the copper layer X and the side surface of the metal-carbon composite A, a metal plating layer b such as a Ni plating layer or a Cu plating layer is provided.
Is formed.

With this structure, most of the heat of the semiconductor element 1 is transferred to the copper layer X on the lower surface side through the copper layer X on the upper surface side of the substrate 2 and the through conductor 2b filled with copper. It is immediately transmitted to the heat sink of the external electric circuit board and is diffused to the outside. Further, the heat laterally transmitted through the copper layer X is transmitted in random directions through the carbonaceous base material m inside the metal-carbon composite A, the aggregate of the unidirectional carbon fibers 1 and the metal component n. , Is quickly transmitted to the heat sink portion of the external electric circuit board through the metal plating layers b on the lower and side surfaces of the base body 2 and is diffused to the outside.

The penetrating conductor 2b strengthens the ground potential when the semiconductor element 1 is grounded, and also functions as a heat transfer medium that transfers heat satisfactorily. The plurality of penetrating conductors 2b preferably have a total cross-sectional area of 45 to 75% of the area of the lower surface of the semiconductor element 1 and are provided at substantially constant intervals. When the total cross-sectional area of the plurality of through conductors 2b is less than 45% of the area of the lower surface of the semiconductor element 1 and the distance between the plurality of through conductors 2 is not constant, the ground potential of the semiconductor element 1 is not stable. High-frequency signal transmission loss is likely to occur, and the heat dissipation of the semiconductor element 1 is likely to deteriorate. The total cross-sectional area of the plurality of through conductors 2b is the semiconductor element 1
If it exceeds 75% of the area of the lower surface of the and the distance between the plurality of through conductors 2b is not constant, the coefficient of thermal expansion in the lateral direction becomes large. As a result, the copper of the penetrating conductor 2b may thermally expand in the lateral direction to cause cracks in the surrounding metal-carbon composite A. More preferably, the plurality of through conductors 2b
It is preferable that the total cross-sectional area of the above is 50 to 70% of the area of the lower surface of the semiconductor element 1.

Specifically, for example, the cross-sectional shape is the diameter (φ).
When a plurality of 0.5 mm circular through conductors 2b are provided so as to be evenly distributed over the entire lower surface of the semiconductor element 1 with a space between adjacent ones of 0.2 mm, a cross-sectional area of the through conductor 2b Is 45% of the area of the bottom surface of semiconductor device 1.
It will be about. The cross-sectional shape of the through conductor 2b has a diameter of 2 m.
When they are provided so as to be evenly distributed over the entire lower surface of the semiconductor element 1 with a distance of 0.2 mm between adjacent ones, the total cross-sectional area of the through conductors 2b is the lower surface of the semiconductor element 1. The area is about 75%.

The penetrating conductor 2b is preferably provided on the portion of the metal-carbon composite A immediately below the semiconductor element 1, but may be provided on substantially the entire surface of the upper surface of the substrate 1 surrounded by the frame 3.
In that case, the through conductor 2b further strengthens and stabilizes the ground potential of the semiconductor element 1 and effectively acts as a heat transfer medium. By forming the penetrating conductor 2b in this manner, the grounding property and the heat transfer property are improved without significantly increasing the weight of the base 1.

Further, the copper of the through conductor 2b may enter the outside from the inner surface of the through hole of the through conductor 2b when being filled. In this case, the cross-sectional area (volume) of the through conductor 2b is increased, and the groundability is further improved.

The rigidity of the base 2 is increased by the metal component n. As a result, the strain due to the thermal expansion of the copper layer X is suppressed so as to approximate the strain due to the thermal expansion of the metal-carbon composite A, and the semiconductor having the thermal expansion close to the thermal expansion coefficient of the metal-carbon composite A. The element 1 can be bonded to the upper surface of the copper layer X. As a result, the heat of the semiconductor element 1 is efficiently dissipated to the outside through the copper layer X.

Specifically, the metal-carbon composite A (coefficient of thermal expansion: 7 × 10 ⁻⁶ to 10 × 10 ⁻⁶ / ° C.) is bonded to the upper and lower surfaces of the copper layer X (coefficient of thermal expansion: 19 × 10). ^-6 / ° C.), since the bond with the metal-carbon composite A is strengthened by the metal component n exposed on the surface of the metal-carbon composite A, distortion due to thermal expansion is suppressed, and the metal-carbon composite A It is close to the thermal strain of. Further, in the metal-carbon composite A, since the preferable thickness of the copper layer X is relatively thin at 200 to 650 μm, it is difficult to be affected by the thermal strain due to the copper layer X. Therefore, the substrate 2 as a whole approximates to the thermal expansion coefficient of the metal-carbon composite A, and the semiconductor element 1 close to the thermal expansion coefficient can be firmly bonded.

The thickness of the metal-carbon composite A of the present invention is
It is preferably 500 to 1500 μm, and if it is less than 500 μm, it becomes difficult to produce a product having high rigidity. If the thickness exceeds 1500 μm, the metal-carbon composite A has a large thickness when transmitting a high-frequency signal to another semiconductor device or an external electric circuit board arranged in the vicinity of the base 2, so that the high-frequency signal may wrap around. As a result, the inductance becomes large and the insertion loss (insertion loss) becomes large. In addition, the thermal strain due to the thermal expansion of the substrate 2 causes the metal-carbon composite A, that is, the semiconductor element 1.
It becomes difficult to approximate the thermal strain due to the thermal expansion of. as a result,
If the semiconductor element 1 is peeled off from the base body 2, it becomes difficult to efficiently dissipate the heat of the semiconductor element 1 to the outside.

Further, the thickness of the copper layer X is preferably 200 to 650 μm, and if it is less than 200 μm, the function of efficiently transmitting heat of the semiconductor element 1 in the lateral direction (parallel to the surface of the mounting portion 2a) is deteriorated. That is, the copper layer X has a function of efficiently transmitting the heat of the semiconductor element 1 in the lateral direction, but the function is deteriorated. When it exceeds 650 μm, the thermal strain due to the thermal expansion of the copper layer X has a great influence on the metal-carbon composite A, and the base 2
The thermal strain due to the overall thermal expansion increases. As a result, the semiconductor element 1 is peeled off from the base 2 and it becomes difficult to efficiently dissipate the heat of the semiconductor element 1 to the outside.

Since the metal-carbon composite A is impregnated with the metal component n, the adhesion of the carbonaceous base material m becomes very good. As a result, a part of the heat of the semiconductor element 1 is efficiently transferred inside the base body 2 and is reliably transferred to the heat sink portion of the external electric circuit board.

When the metal component n is composed of Ag and Cu, the metal component n and the carbonaceous base material m have high wettability between them, and thus the adhesion is very high. In addition, the metal component n is at least one of Ti, Cr, Zr, and W and C
When it is composed of u, the metal component n and the carbonaceous base material m have very high adhesion because carbon compounds of Ti, Cr, Zr, and W are generated between them. Ag, Ti, Cr,
When at least one of Zr and W is less than 0.2% by weight, the wettability is lowered, and the formation of carbon compounds of these metals is not promoted, so that the adhesion is lowered. Particularly, in the case of Ti, Cr, Zr, and W, it is difficult to melt in the metal component n, and Ti, Cr, Zr, and
Since W is dispersed in Cu and / or on the Cu surface, it becomes difficult to efficiently transfer the heat of the semiconductor element 1 inside the base 2.

The content of the metal component n in the metal-carbon composite A is preferably 10 to 20% by weight. If it is less than 10% by weight, the desired thermal conductivity cannot be obtained in the lateral direction, and if it exceeds 20% by weight, the difference in the coefficient of thermal expansion between the substrate 2 and the semiconductor element 1 becomes large, and the semiconductor element 1 and the substrate 2 have a large difference. Cracks are likely to occur at the joint. Considering the difference in thermal expansion coefficient between the substrate 2 and the semiconductor element 1, it is more preferably 15 to 20% by weight. Further, by setting the content of the metal component n within a suitable range of 10 to 20% by weight, the metal component n appearing on the surface of the metal-carbon composite A is shown.
The surface area ratio is about 6 to 10% with respect to the surface area of the metal-carbon composite A, which improves the adhesion strength of the metal plating layer b.

Regarding the coefficient of thermal expansion, when the metal component n is impregnated in the carbonaceous base material m at a suitable content of about 10 to 20% by weight, the coefficient of thermal expansion of the metal-carbon composite A becomes a semiconductor element. It does not rise to a degree that is significantly different from 1. Also,
Among the metal components n, particularly Ag is very high in thermal conductivity, and is advantageous for transmitting heat of the semiconductor element 1. Further, since the elastic modulus of the metal-carbon composite A is higher than that of the conventional one, the metal component n functions as a reinforcing material when both ends of the base 2 are fastened to the external electric circuit board by screws, and the base 2 is damaged. Effectively prevent.

Further, since the melting point of the metal component n is very high, the metal component n does not melt even when the semiconductor package is assembled with a brazing material such as silver solder having a melting point of about 780 ° C. or higher, and the carbonaceous matrix is always used. The inside of the material m can be kept stable. In the case of a metal component n that melts during brazing, it may flow out from the end surface of the base body 2 and is not suitable as a semiconductor package.

The metal plating layer b deposited on the surface of the copper layer X and the side surface of the metal-carbon composite A is a Ni plating layer or Cu.
It consists of a plating layer. The metal plating layers b on the upper and lower surfaces of the base body 2 enable the frame body 3 to be easily joined to the base body 2. On the other hand, the metal plating layer b on the side surface of the substrate 2
Effectively prevents the oxidative corrosion of the metal component n exposed on the side surface. The thickness of the metal plating layer b is preferably 1 to 30 μm and 1 μm
If the thickness is less than m, the metal plating layer b may be scarcely deposited due to the variation in the thickness. In this case, the surface is likely to be oxidized, and the joint strength of the frame 3 is deteriorated. When it exceeds 30 μm, the heat transfer efficiency is low in the case of the Ni plating layer and the heat of the semiconductor element 1 is not quickly dissipated, and in the case of the Cu plating layer, it adheres due to the difference in thermal expansion with the side surface of the metal-carbon composite A. Sex decreases.

Further, the metal plating layer b effectively prevents He from being trapped in the pores of the unidirectional carbon fiber 1 when the airtightness inside the semiconductor package is inspected by using helium (He). However, it can be determined that the airtightness test is appropriate.

On the upper surface of the base body 2, a frame body 3 having a mounting portion 3a of the input / output terminal 5 formed of a through hole or a cutout portion on the side is provided with a solder such as Ag solder so as to surround the mounting portion 2a. Joined with materials. Since the frame 3 electromagnetically shields the peripheral portion of the semiconductor element 1 where a high frequency signal is input / output,
It is preferably made of a metal such as —Ni—Co alloy, but may be made of ceramics such as aluminum oxide (Al ₂ O ₃ ) ceramics and aluminum nitride (AlN) ceramics. For example, in the case of Fe-Ni-Co alloy,
The alloy ingot is formed into a predetermined shape by subjecting the alloy ingot to metal processing such as rolling and pressing. In addition, in order to effectively prevent oxidative corrosion on its surface, 0.5-9
It is advisable to deposit a metal layer such as a Ni layer having a thickness of 0.5 μm or an Au layer having a thickness of 0.5 to 5 μm by a plating method.

The input / output terminal 5 is fitted and joined to the inner peripheral surface of the mounting portion 3a of the frame body 3 via a brazing material such as Ag solder. The input / output terminal 5 includes a flat plate portion in which a conductive metallization layer 5a is adhered to an insulating ceramic substrate, and a standing wall portion joined to the upper surface of the flat plate portion with the metallization layer 5a interposed therebetween. The airtightness inside the package is maintained and a high frequency signal is input and output between the semiconductor package and an external electric circuit. The material of the ceramic substrate is Al ₂ O ₃ depending on the characteristics such as dielectric constant and coefficient of thermal expansion.
It may be selected from ceramic materials such as ceramics and AlN ceramics.

The input / output terminal 5 is made into a slurry by adding and mixing an appropriate binder, a solvent and the like to a raw material powder to be a ceramic substrate, and the slurry is made into a ceramic green by a forming method such as a doctor blade method or a calendar roll method. A metal paste obtained by forming a sheet, then subjecting the ceramic green sheet to an appropriate punching process, and adding and mixing an organic solvent and a solvent to the powder of W, molybdenum (Mo), manganese (Mn), etc., which becomes the metallized layer 5a. Is printed and applied in a desired pattern shape by a conventionally known screen printing method, and is simultaneously fired at a high temperature of about 1600 ° C.

On the upper surface of the metallized layer 5a, a lead terminal (not shown) made of a member having a coefficient of thermal expansion similar to that of the ceramic substrate of the input / output terminal 5 in order to strengthen the connection with the input / output terminal 5. Are joined with a brazing material such as Ag brazing. For example, the ceramic substrate of the input / output terminal 5 is Al ₂ O ₃
When made of ceramics, the lead terminals are Fe-Ni-
It is made of Co alloy or Fe-Ni alloy.

The frame 3 to which the input / output terminals 5 are fitted and joined
Fe-N, which functions as a joining medium for joining the lid 7 by seam welding or Au-Sn (tin) brazing, on the upper surface of
A seal ring 4 made of a metal such as an i-Co alloy or a Fe-Ni alloy is joined with a brazing material such as Ag brazing. When the seal ring 4 is made of, for example, a Fe—Ni—Co alloy, it is formed into a predetermined shape by subjecting an ingot of this alloy to metal processing such as rolling and pressing. Moreover, in order to effectively prevent oxidative corrosion on its surface, 0.
It is advisable to deposit a metal layer such as a Ni layer of 5 to 9 μm or an Au layer of 0.5 to 5 μm by a plating method. On the upper surface of the seal ring 4, a metallic lid 7 made of Fe-Ni-Co alloy, Fe-Ni alloy or the like, or a ceramic lid 7 made of Al ₂ O ₃ ceramics, AlN ceramics or the like is joined. Then, the lid 7 hermetically seals the semiconductor element 1 inside the semiconductor package.

As described above, the semiconductor package of the present invention is joined to the base 2 having the mounting portion 2a for mounting the semiconductor element 1 on the upper surface thereof and the upper surface of the base 2 so as to surround the mounting portion 2a. A frame body 3 in which a mounting portion 3a of the input / output terminal 5 formed of a through hole or a cutout portion is formed on a side portion, and the mounting portion 3a.
And an input / output terminal 5 fitted in And
The base body 2 contains 0.2 to 10% by weight of at least one of Ag, Ti, Cr, Zr, and W and 90% of Cu in a carbonaceous base material m in which an aggregate of unidirectional carbon fibers 1 is dispersed.
A metal having a plurality of through conductors 2b formed by impregnating the metal component n containing 99.8% by weight with copper into a plurality of through holes penetrating between the upper and lower surfaces at a position located in the mounting portion. A carbon composite A, a copper layer X formed on the upper and lower surfaces of the metal carbon composite A, and a metal plating layer b deposited on the surface of the copper layer X and the side surfaces of the metal carbon composite A. There is.

The semiconductor device of the present invention includes the semiconductor package of the present invention, the semiconductor element 1 mounted and fixed on the mounting portion 2a and electrically connected to the input / output terminal 5, and the frame 3.
And a lid 7 bonded to the upper surface of the. Specifically, in this semiconductor device, the semiconductor element 1 is mounted and fixed on the mounting portion 2a with an adhesive such as glass, resin, or brazing material, and the electrode of the semiconductor element 1 is bonded to a predetermined metallization layer via a bonding wire. 5a electrically connected and then the seal ring 4
The lid 7 is joined to the upper surface of the substrate by glass, resin, brazing material, seam welding, or the like, so that the semiconductor is provided inside the semiconductor device including the substrate 2, the frame 3, the seal ring 4, the input / output terminals 5 and the lid 7. It is formed by housing the element 1. This semiconductor device operates the semiconductor element 1 by a high frequency signal supplied from an external electric circuit.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the present invention. For example, as a semiconductor package, a cylindrical fixing member for connecting an optical fiber is provided on a side portion of the frame body 3 so that an optical signal can be input / output, and an optical signal can be input / output to / from an optical semiconductor element. It may be an optical semiconductor package for operating a semiconductor device.

[0054]

EXAMPLE An example of a package for housing a semiconductor device according to the present invention will be described below.

Example 1 The semiconductor package shown in FIGS. 1 and 2 was manufactured by the following steps [1] and [2].

[1] A Fe-Ni-Co alloy of about 13 mm in length and about 21 mm in width is formed so as to surround the mounting portion 2a on the outer peripheral portion of the upper surface of the substantially rectangular base 2 having a length of about 13 mm and a width of about 30 mm. The frame 3 having a substantially rectangular shape in plan view was joined with silver solder. On the surface of the frame body 3, a Ni plating layer with a thickness of 3 μm,
A 1.5 μm Au plating layer was sequentially deposited, and a mounting portion 3a of the input / output terminal 5 composed of a notch portion was formed on the upper end portion of the side portion of the frame body 3.

[2] The input / output terminal 5 made of alumina ceramics was fitted and joined to the mounting portion 3a of the frame body 3 with silver solder. The input / output terminal 5 has a thickness of 3 μm on the Mo—Mn metallization layer 5 a formed so as to conduct the inside and outside of the frame body 3.
The Ni plating layer and the Au plating layer having a thickness of 1.5 μm were sequentially deposited. Fe-Ni is formed outside the frame body 3 of the metallized layer 5a.
A lead terminal made of —Co alloy was joined with an Ag brazing material.

In the above step [1], the substrate 2 described above is used.
By the production process of, Ag is added to the carbonaceous base material m in which the aggregate of unidirectional carbon fibers 1 is dispersed in an amount of 0.1, 0.2, 1,
2,3,5,7,9,10,11,13 (wt%), and the metal component n containing Cu as the remaining component is impregnated, and copper is placed in the through hole at the portion located on the mounting portion 2a. Metal-carbon composite A in which a plurality of filled through conductors are formed
And 11 kinds (5 pieces each) of the base 2 having the copper layers X formed on the upper and lower surfaces thereof and the metal plating layers b deposited on the surfaces of the copper layers X and the side surfaces of the metal-carbon composite A. It was made. The content of the metal component n in the metal-carbon composite A is 17
It was set to% by weight. Regarding them, the horizontal and vertical thermal conductivity of the base 2, the horizontal and vertical thermal expansion coefficients, the peeling of the semiconductor element 1 100 hours after the start of use, the base 2
Table 1 shows the results of measuring the presence or absence of cracks and the like.

[0059]

[Table 1]

From Table 1, when the content of Ag was less than 0.2% by weight, cracking was observed in the substrate 2, and when it exceeded 10% by weight, peeling of the semiconductor element 1 was observed.

(Example 2) A semiconductor package manufactured in the same manner as in Example 1 above, wherein Ag in the metal component n is used.
Is 1% by weight and Cu is 99% by weight, and the thickness of the metal-carbon composite A is 300, 400, 500, 600, 800, 1000, 1200, 1400, 1
11 kinds (5 for each) with various values of 500, 1600, 1700 (μm)
55 semiconductor packages are manufactured by using the base 2 of
Table 2 shows the results of measuring the rigidity of the substrate 2, the insertion loss when a high-frequency signal of 5 GHz was input and output, the peeling of the semiconductor element 1 100 hours after the start of use, and the presence or absence of cracks in the substrate 2. Show.

[0062]

[Table 2]

From Table 2, the cracks of the substrate 2 have a thickness of 500.
It has become clear that it occurs when the thickness is less than μm. This is because the thickness of the base 2 is too small to withstand thermal stress. The transmission loss did not exceed 15 dB, which is the branch point, in any thickness, and was in a good state.

(Third Embodiment) A semiconductor package manufactured in the same manner as in the first embodiment, in which Ag in the metal component n is used.
1% by weight and Cu 99% by weight, the thickness of the metal-carbon composite A is 1000 μm, and the thickness of the Cu layer X is 100, 200, 30.
Forty-five semiconductor packages were produced using nine kinds (five pieces each) of the base body 2 having various values of 0, 400, 500, 600, 650, 700, 800 (μm). Regarding them, the thermal conductivity in the horizontal and vertical directions of the substrate 2, the coefficient of thermal expansion in the horizontal and vertical directions, the peeling of the semiconductor element 1 100 hours after the start of use,
Table 3 shows the results of measuring the presence or absence of cracks or the like on the substrate 2.

[0065]

[Table 3]

From Table 3, it can be seen that when the thickness of the Cu layer X is less than 200 μm, cracks occur in the substrate 2, and when it exceeds 650 μm, the semiconductor element 1 peels off and cracks occur in the substrate 2. found.

(Embodiment 4) A semiconductor package manufactured in the same manner as in Embodiment 1 except that Ag in the metal component n is used.
1% by weight and Cu 99% by weight, the thickness of the metal-carbon composite A is 1000 μm, the thickness of the Cu layer X is 300 μm, and Ni is
The thickness of the metal plating layer b composed of the plating layer is 0.5, 0.8,
1, 2, 5, 8, 10, 15, 20, 25, 28, 30, 32, 35 (μ
Seventy semiconductor packages were produced using 14 kinds (five pieces each) of the substrate 2 having various values of m). Table 4 shows the results of measuring the oxidation state of the surface of the substrate 2 and the thermal conductivity in the lateral direction for these.

[0068]

[Table 4]

From Table 4, the thickness of the metal plating layer b is 1 μm.
If it is less than 1, discoloration is observed on the surface. This discoloration is because there is a portion where the underlying copper layer appears on the surface due to the small plating thickness, and the surface of the copper layer is in an oxidized state. When the thickness of the metal plating layer b exceeds 30 μm,
The thermal conductivity in the lateral direction was reduced to 300 W / mK or less.

(Embodiment 5) A semiconductor package manufactured in the same manner as in Embodiment 1 except that Ag in the metal component n is used.
1% by weight and 99% by weight of Cu, the thickness of the metal-carbon composite A is 1000 μm, the thickness of the Cu layer X is 300 μm, and the thickness of the metal plating layer b consisting of the Ni plating layer is 20 μm. The total cross-sectional area of the plurality of through conductors 2b at the portion located at 2a is 30, 40, 45, 50, 60 with respect to the lower surface of the semiconductor element 1.
Nine kinds (5 each) with various values of 70, 75, 80, 90 (%)
Forty-five semiconductor packages were manufactured using the base body 2). In this case, the distance between the through conductors 2b was fixed at 0.2 mm. Table 5 shows the results of measuring the thermal conductivity of the substrate 2 in the horizontal and vertical directions, the coefficient of thermal expansion in the horizontal and vertical directions, and the insertion loss of the high-frequency signal.

[0071]

[Table 5]

From Table 5, when the total cross-sectional area of the through conductor 2b is less than 45% with respect to the lower surface of the semiconductor element 1, the thermal conductivity is slightly small, but the transmission loss becomes 15 dB.
Although it was within the permissible range for high-frequency transmission, a somewhat large loss occurred.

In place of Ag of the metal component n, Ti,
Even when Cr, Zr, and W were used, the same results as in the above example were obtained.

[0074]

In the package for housing a semiconductor element of the present invention, the base having the mounting portion for mounting the semiconductor element on the upper surface is a carbonaceous base material in which an aggregate of unidirectional carbon fibers is dispersed. 0.2 to 10% by weight of at least one of Ag, Ti, Cr, Zr and W and 90 to 99.8% of Cu.
A metal-carbon composite which is impregnated with a metal component contained by weight% and has a plurality of through conductors formed by filling copper in through holes penetrating between upper and lower surfaces at a position located in the mounting portion, and a metal carbon By having a copper layer formed on the upper and lower surfaces of the composite and a metal plating layer deposited on the surface of the copper layer and the side surface of the metal-carbon composite, a semiconductor integrated circuit device such as an IC or LSI The heat of semiconductor elements such as FETs and FETs can be efficiently transmitted to the outside of the package for housing the semiconductor elements, and the ground potential of the semiconductor elements can be strengthened and stabilized by the through conductors. You can do anything. Further, since the groundability is improved, the transmission loss of the high frequency signal input to and output from the semiconductor element can be reduced. Therefore, the semiconductor element can be operated normally and stably for a long period of time.

The semiconductor element housing package of the present invention is
Preferably, the metal-carbon composite has a thickness of 500 to 1500 μm and the copper layer has a thickness of 200 to 650 μm, and the plurality of through conductors have a total cross-sectional area of 45 to 75 of the area of the lower surface of the semiconductor element. % And are provided at substantially constant intervals, cracks and the like do not occur in the metal-carbon composite, heat of the semiconductor element can be dissipated better, and groundability is further improved.

The semiconductor device of the present invention includes the semiconductor package of the present invention, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminals, and a lid body joined to the upper surface of the frame body. By including the above, a highly reliable semiconductor device using the semiconductor package of the present invention can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.

FIG. 2 is a partially enlarged cross-sectional view of a base body in the semiconductor element housing package of FIG.

FIG. 3 is a plan view of a conventional semiconductor element housing package.

FIG. 4 is a cross-sectional view of the semiconductor device housing package of FIG.

5 is a partial enlarged cross-sectional view of a base body in the semiconductor element housing package of FIG.

[Explanation of symbols]

1: Semiconductor element 2: Base 2a: Placement part 2b: Through conductor 3: frame 3a: Mounting part 5: Input / output terminal A: Metal-carbon composite l: Unidirectional carbon fiber m: Carbonaceous base material n: Metal component X: Copper layer b: Metal plating layer

Claims (3)

[Claims] 1. A base body having a mounting portion for mounting a semiconductor element on an upper surface thereof, and an upper surface of the base body joined to surround the mounting portion and having a through hole or a cutout portion on a side portion. In a package for storing a semiconductor element, which comprises a frame body having a mounting portion for an output terminal formed therein and an input / output terminal fitted in the mounting portion, the base body has an assembly of unidirectional carbon fibers inside. The dispersed carbonaceous base material is impregnated with a metal component containing 0.2 to 10% by weight of at least one of silver, titanium, chromium, zirconium and tungsten and 90 to 99.8% by weight of copper, and the above-mentioned mounting part A metal-carbon composite having a plurality of through conductors formed by filling copper in through holes penetrating between the upper and lower surfaces at a position located at,
A semiconductor device comprising a copper layer formed on the upper and lower surfaces of the metal-carbon composite, and a metal plating layer deposited on the surface of the copper layer and the side surface of the metal-carbon composite. Storage package. 2. The metal-carbon composite has a thickness of 500 to 1500.
μm, the thickness of the copper layer is 200 to 650 μm, the total cross-sectional area of the plurality of through conductors is 45 to 75% of the area of the lower surface of the semiconductor element, and the through conductors are arranged at substantially regular intervals. A package for housing a semiconductor element, which is provided. 3. The package for accommodating a semiconductor element according to claim 1, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminal, and the frame body. And a lid attached to the upper surface of the semiconductor device.