JP2003229634A5 - - Google Patents

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Publication number
JP2003229634A5
JP2003229634A5 JP2002027984A JP2002027984A JP2003229634A5 JP 2003229634 A5 JP2003229634 A5 JP 2003229634A5 JP 2002027984 A JP2002027984 A JP 2002027984A JP 2002027984 A JP2002027984 A JP 2002027984A JP 2003229634 A5 JP2003229634 A5 JP 2003229634A5
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JP
Japan
Prior art keywords
density
light
substrate
region
compound semiconductor
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Application number
JP2002027984A
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English (en)
Japanese (ja)
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JP2003229634A (ja
JP4043795B2 (ja
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Priority to JP2002027984A priority Critical patent/JP4043795B2/ja
Priority claimed from JP2002027984A external-priority patent/JP4043795B2/ja
Publication of JP2003229634A publication Critical patent/JP2003229634A/ja
Publication of JP2003229634A5 publication Critical patent/JP2003229634A5/ja
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Publication of JP4043795B2 publication Critical patent/JP4043795B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002027984A 2002-02-05 2002-02-05 光集積素子 Expired - Fee Related JP4043795B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002027984A JP4043795B2 (ja) 2002-02-05 2002-02-05 光集積素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002027984A JP4043795B2 (ja) 2002-02-05 2002-02-05 光集積素子

Publications (3)

Publication Number Publication Date
JP2003229634A JP2003229634A (ja) 2003-08-15
JP2003229634A5 true JP2003229634A5 (cg-RX-API-DMAC7.html) 2005-08-18
JP4043795B2 JP4043795B2 (ja) 2008-02-06

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ID=27749342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002027984A Expired - Fee Related JP4043795B2 (ja) 2002-02-05 2002-02-05 光集積素子

Country Status (1)

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JP (1) JP4043795B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4868114B2 (ja) * 2005-08-11 2012-02-01 日立電線株式会社 窒化物系半導体基板およびその製造方法
JP5063300B2 (ja) * 2007-11-05 2012-10-31 富士フイルム株式会社 レーザモジュール
JP5633123B2 (ja) * 2009-06-30 2014-12-03 日亜化学工業株式会社 半導体レーザ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3659621B2 (ja) * 1999-02-08 2005-06-15 株式会社東芝 窒化物系半導体レーザ装置の製造方法
JP2000315814A (ja) * 1999-04-30 2000-11-14 Nichia Chem Ind Ltd 窒化ガリウム系ハイブリッド素子及びその作製方法

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