JP2003229433A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2003229433A
JP2003229433A JP2002347455A JP2002347455A JP2003229433A JP 2003229433 A JP2003229433 A JP 2003229433A JP 2002347455 A JP2002347455 A JP 2002347455A JP 2002347455 A JP2002347455 A JP 2002347455A JP 2003229433 A JP2003229433 A JP 2003229433A
Authority
JP
Japan
Prior art keywords
tft
film
gate electrode
manufacturing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002347455A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229433A5 (enExample
Inventor
Etsuko Shinkawa
悦子 新川
Kiyoshi Kato
清 加藤
Yoshimoto Kurokawa
義元 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002347455A priority Critical patent/JP2003229433A/ja
Publication of JP2003229433A publication Critical patent/JP2003229433A/ja
Publication of JP2003229433A5 publication Critical patent/JP2003229433A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002347455A 2001-11-30 2002-11-29 半導体装置の作製方法 Withdrawn JP2003229433A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002347455A JP2003229433A (ja) 2001-11-30 2002-11-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-365699 2001-11-30
JP2001365699 2001-11-30
JP2002347455A JP2003229433A (ja) 2001-11-30 2002-11-29 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2002348393A Division JP2004186215A (ja) 2002-11-29 2002-11-29 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003229433A true JP2003229433A (ja) 2003-08-15
JP2003229433A5 JP2003229433A5 (enExample) 2006-01-05

Family

ID=27759511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002347455A Withdrawn JP2003229433A (ja) 2001-11-30 2002-11-29 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2003229433A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109073A (ja) * 2003-09-30 2005-04-21 Fujitsu Display Technologies Corp 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置
WO2006064606A1 (ja) * 2004-12-14 2006-06-22 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
JP2006210890A (ja) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008015454A (ja) * 2006-06-30 2008-01-24 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法
US8212247B2 (en) 2009-07-15 2012-07-03 Samsung Mobile Display Co., Ltd. Organic light emitting display device and fabricating method thereof
JP2012147001A (ja) * 2012-03-13 2012-08-02 Renesas Electronics Corp 半導体集積回路の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109073A (ja) * 2003-09-30 2005-04-21 Fujitsu Display Technologies Corp 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置
WO2006064606A1 (ja) * 2004-12-14 2006-06-22 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
JP4707677B2 (ja) * 2004-12-14 2011-06-22 シャープ株式会社 半導体装置及びその製造方法
US8008718B2 (en) 2004-12-14 2011-08-30 Sharp Kabushiki Kaisha Semiconductor device and production method thereof
JP2006210890A (ja) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008015454A (ja) * 2006-06-30 2008-01-24 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法
US8269907B2 (en) 2006-06-30 2012-09-18 Lg Display Co., Ltd. Liquid crystal display device and method for fabricating the same
US8665386B2 (en) 2006-06-30 2014-03-04 Lg Display Co., Ltd. Liquid crystal display device and method for fabricating the same
US8212247B2 (en) 2009-07-15 2012-07-03 Samsung Mobile Display Co., Ltd. Organic light emitting display device and fabricating method thereof
JP2012147001A (ja) * 2012-03-13 2012-08-02 Renesas Electronics Corp 半導体集積回路の製造方法

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