JP2003217849A - Manufacturing method for organic electroluminescence element - Google Patents
Manufacturing method for organic electroluminescence elementInfo
- Publication number
- JP2003217849A JP2003217849A JP2002019632A JP2002019632A JP2003217849A JP 2003217849 A JP2003217849 A JP 2003217849A JP 2002019632 A JP2002019632 A JP 2002019632A JP 2002019632 A JP2002019632 A JP 2002019632A JP 2003217849 A JP2003217849 A JP 2003217849A
- Authority
- JP
- Japan
- Prior art keywords
- organic electroluminescence
- defective portion
- organic
- electrode
- electroluminescence element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000002950 deficient Effects 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 14
- 239000012044 organic layer Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 230000000452 restraining effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 7
- 230000035699 permeability Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、透明基板の上
に、第１電極と、発光層を含む１以上の有機層と、第２
電極とが設けられた有機エレクトロルミネッセンス素子
の製造方法に係り、特に、有機ルミネッセンス素子中に
おける欠陥部分を正確かつ簡単に除去できるようにした
点に特徴を有するものである。TECHNICAL FIELD The present invention relates to a transparent substrate, a first electrode, one or more organic layers including a light emitting layer, and a second electrode.
The present invention relates to a method for manufacturing an organic electroluminescence element provided with an electrode, and is characterized in that a defective portion in the organic luminescence element can be accurately and easily removed.
【０００２】[0002]
【従来の技術】近年、情報機器の多様化等にともなっ
て、従来より一般に使用されているＣＲＴに比べて消費
電力が少なく容積の小さい平面表示素子のニーズが高ま
り、このような平面表示素子の一つとしてエレクトロル
ミネッセンス素子が注目されている。2. Description of the Related Art In recent years, with the diversification of information equipment, the need for a flat display element that consumes less power and has a smaller volume than that of a CRT that has been generally used, has increased. As one of them, an electroluminescence element is receiving attention.
【０００３】そして、このようなエレクトロルミネッセ
ンス素子は、使用する材料によって無機エレクトロルミ
ネッセンス素子と有機エレクトロルミネッセンス素子と
に大別される。Such electroluminescent elements are roughly classified into inorganic electroluminescent elements and organic electroluminescent elements according to the materials used.
【０００４】ここで、無機エレクトロルミネッセンス素
子は、一般に発光部に高電界を作用させ、電子をこの高
電界中で加速して発光中心に衝突させ、これにより発光
中心を励起させて発光させるようになっている。Here, in an inorganic electroluminescence device, generally, a high electric field is applied to a light emitting portion, electrons are accelerated in the high electric field to collide with a light emitting center, thereby exciting the light emitting center to emit light. Has become.
【０００５】これに対し、有機エレクトロルミネッセン
ス素子は、電子注入電極とホール注入電極とからそれぞ
れ電子とホールとを発光層内に注入し、このように注入
された電子とホールとを再結合させて、有機分子を励起
状態にし、この有機分子が励起状態から基底状態に戻る
ときに発光するようになっており、無機エレクトロルミ
ネッセンス素子に比べて、低い電圧で駆動できるという
利点がある。On the other hand, in the organic electroluminescence element, electrons and holes are injected into the light emitting layer from the electron injection electrode and the hole injection electrode, respectively, and the electrons and holes thus injected are recombined. The organic molecule is excited to emit light when the organic molecule returns from the excited state to the ground state, which is advantageous in that it can be driven at a lower voltage than an inorganic electroluminescence device.
【０００６】また、有機エレクトロルミネッセンス素子
の場合には、発光材料である螢光物質を選択することに
よって適当な色彩に発光する発光素子を得ることがで
き、マルチカラーやフルカラーの表示装置等としても利
用できるという期待があり、さらに低電圧で面発光でき
るために、液晶表示素子等のバックライトとして利用す
ることも考えられる。Further, in the case of an organic electroluminescence element, a light emitting element which emits light in an appropriate color can be obtained by selecting a fluorescent substance which is a light emitting material, and can be used as a multicolor or full color display device or the like. It can be used as a backlight for liquid crystal display devices, etc., because it can be used for surface emission at a lower voltage.
【０００７】しかし、有機エレクトロルミネッセンス素
子の場合、その製造時における不純物の混入や水分の侵
入等によって、導電性が高くなった欠陥部分や、ダーク
スポットと呼ばれる欠陥部分が存在し、有機エレクトロ
ルミネッセンス素子を発光させた場合に、上記のような
導電性の高い欠陥部分にリーク電流が流れて発光輝度が
低下したり、次第にダークスポット等の欠陥部分が拡大
して、良好な発光状態が得られなくなるという問題があ
った。However, in the case of the organic electroluminescence element, there are a defect portion having high conductivity and a defect portion called a dark spot due to mixing of impurities and intrusion of water at the time of manufacturing the organic electroluminescence element. When light is emitted, a leak current flows in a defective portion having high conductivity as described above and emission luminance decreases, or a defective portion such as a dark spot gradually expands, and a good light emitting state cannot be obtained. There was a problem.
【０００８】[0008]
【発明が解決しようとする課題】この発明は、有機エレ
クトロルミネッセンス素子における上記のような問題を
解決することを課題とするものであり、有機エレクトロ
ルミネッセンス素子を発光させた場合に、導電性の高い
欠陥部分にリーク電流が流れて発光輝度が低下したり、
ダークスポット等の欠陥部分が次第に拡大したりするの
を抑制し、良好な発光が安定して行える有機エレクトロ
ルミネッセンス素子が簡単に得られるようにすることを
課題とするものである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in an organic electroluminescence device, which has high conductivity when the organic electroluminescence device emits light. Leakage current flows in the defective part and the emission brightness decreases,
It is an object of the present invention to prevent a defective portion such as a dark spot from gradually expanding and to easily obtain an organic electroluminescence device capable of stably emitting excellent light.
【０００９】[0009]
【課題を解決するための手段】この発明においては、上
記のような課題を解決するため、透明基板の上に、第１
電極と、発光層を含む１以上の有機層と、第２電極とが
設けられた有機エレクトロルミネッセンス素子を製造す
るにあたり、上記の透明基板側からレーザー光を照射さ
せて、有機エレクトロルミネッセンス素子中における欠
陥部分を除去するようにしたのである。According to the present invention, in order to solve the above problems, a first substrate is formed on a transparent substrate.
In manufacturing an organic electroluminescent element provided with an electrode, one or more organic layers including a light emitting layer, and a second electrode, laser light is irradiated from the transparent substrate side to produce an organic electroluminescent element in the organic electroluminescent element. The defective portion was removed.
【００１０】そして、この発明のように、透明基板側か
らレーザー光を照射させて、有機エレクトロルミネッセ
ンス素子中における欠陥部分を除去すると、この有機エ
レクトロルミネッセンス素子を発光させた場合に、導電
性の高い欠陥部分にリーク電流が流れて発光輝度が低下
したり、ダークスポット等の欠陥部分が次第に拡大した
りするのが抑制され、良好な発光が安定して行えるよう
になる。Then, as in the present invention, by irradiating a laser beam from the transparent substrate side to remove the defective portion in the organic electroluminescence element, the organic electroluminescence element has high conductivity. It is possible to prevent a leakage current from flowing in the defective portion and reduce the emission brightness, or to gradually expand the defective portion such as a dark spot, thereby enabling good light emission to be stably performed.
【００１１】ここで、上記のようにレーザー光を照射さ
せて、有機エレクトロルミネッセンス素子中における欠
陥部分を除去する場合、除去された部分を通して発光層
を含む有機層等が劣化するのを防止するため、上記のよ
うな操作を不活性ガス中で行うことが好ましい。Here, when the defective portion in the organic electroluminescent element is removed by irradiating the laser beam as described above, in order to prevent the organic layer including the light emitting layer from deteriorating through the removed portion. It is preferable to carry out the above operation in an inert gas.
【００１２】また、上記のレーザー光としては、透明基
板に対する透過性が高いものを用いることが好ましく、
一般には、ガラス等で構成される透明基板に対する透過
性が８０％以上のレーザー光を用いるようにし、例え
ば、波長が３５５ｎｍ，５３２ｎｍ，１０６４ｎｍにな
ったレーザー光を使用することができる。また、上記の
レーザー光のエネルギーが低いと、欠陥部分を簡単に除
去することができず、数回の照射が必要になる一方、レ
ーザー光のエネルギーが高くなり過ぎると、欠陥部分の
周囲に対して影響を及ぼすため、通常は、エネルギーが
０．１〜２０ｍＪ／パルスの範囲のレーザー光を用いる
ようにする。なお、上記のレーザー光のスポット径等に
ついては、欠陥部分の大きさ等に対応するように、適宜
選択して定めることができる。As the above laser light, it is preferable to use one that has high transparency to a transparent substrate,
Generally, laser light having a transmittance of 80% or more with respect to a transparent substrate made of glass or the like is used, and for example, laser light having wavelengths of 355 nm, 532 nm, and 1064 nm can be used. Further, when the energy of the laser light is low, the defective portion cannot be easily removed, and irradiation of several times is required. On the other hand, when the energy of the laser light becomes too high, the surroundings of the defective portion Therefore, laser light having an energy in the range of 0.1 to 20 mJ / pulse is usually used. The spot diameter of the laser light and the like can be appropriately selected and determined so as to correspond to the size of the defective portion and the like.
【００１３】また、上記のように透明基板側からレーザ
ー光を照射させて、有機エレクトロルミネッセンス素子
中における欠陥部分を除去するにあたり、有機エレクト
ロルミネッセンス素子を発光させた状態で行うと、ダー
クスポット等の欠陥部分を発見しながら、レーザー光を
欠陥部分に対して正確に照射させて、欠陥部分を簡単に
除去できるようになる。When the organic electroluminescent device is irradiated with laser light to remove the defective portion in the organic electroluminescent device as described above, when the organic electroluminescent device is made to emit light, dark spots and the like are generated. While finding the defective portion, the defective portion can be easily removed by accurately irradiating the defective portion with laser light.
【００１４】また、上記のように透明基板側からレーザ
ー光を照射させて有機エレクトロルミネッセンス素子中
における欠陥部分を除去した場合、この部分から水分等
が侵入しやすくなるため、上記のようにレーザー光で除
去した欠陥部分に、絶縁性で透湿性の低い保護材を充填
させることが好ましい。なお、このように除去した欠陥
部分に絶縁性で透湿性の低い保護材を充填させる作業
も、不活性ガス中で行うことが好ましい。Further, when the defective portion in the organic electroluminescence device is removed by irradiating the laser light from the transparent substrate side as described above, water or the like easily enters from this portion, so that the laser light is emitted as described above. It is preferable to fill the defective portion removed in step 1 with an insulating and low moisture-permeable protective material. It should be noted that the work of filling the defective portion thus removed with a protective material having an insulating property and a low moisture permeability is also preferably performed in an inert gas.
【００１５】ここで、上記の絶縁性で透湿性の低い保護
材としては、例えば、各種の窒化ケイ素Ｓｉx Ｎy 、各
種の酸窒化ケイ素Ｓｉx Ｏy Ｎz 、各種の酸化ケイ素Ｓ
ｉxＯy 、透湿性の低いポリマー等を用いることができ
る。Examples of the above-mentioned insulating material having a low moisture permeability include, for example, various kinds of silicon nitride Si x N y , various kinds of silicon oxynitride Si x O y N z , and various kinds of silicon oxide S.
i x O y , a polymer having low moisture permeability, or the like can be used.
【００１６】また、上記の有機エレクトロルミネッセン
ス素子においては、上記の第１電極や、発光層等の有機
層や、第２電極の材料として、従来より一般に用いられ
ているものを使用することができる。なお、上記の第１
電極としては、上記のレーザー光の透過性が高いＩＴＯ
（インジウム・スズ酸化物）やＩＺＯ（インジウム・亜
鉛酸化物）等の透明な電極材料を用いことが好ましい。Further, in the above organic electroluminescence element, as the material of the above-mentioned first electrode, the organic layer such as the light emitting layer, and the second electrode, those generally used conventionally can be used. . In addition, the first
As the electrode, ITO having high transparency to the above laser light is used.
It is preferable to use a transparent electrode material such as (indium / tin oxide) or IZO (indium / zinc oxide).
【００１７】[0017]
【実施例】以下、この発明の実施例に係る有機エレクト
ロルミネッセンス素子の製造方法を、添付図面に基づい
て具体的に説明し、この実施例に示すようにして製造し
た有機エレクトロルミルッセンス素子においては、欠陥
部分が拡大するのが防止されることを明らかにする。EXAMPLES Hereinafter, a method for manufacturing an organic electroluminescent element according to an example of the present invention will be specifically described with reference to the accompanying drawings, and an organic electroluminescent element manufactured as shown in this example will be described. Reveals that the defect is prevented from expanding.
【００１８】（実施例）この実施例においては、図１に
示すように、ガラス製の透明基板１１上にＩＴＯ（イン
ジウム・スズ酸化物）を用いて膜厚が１００ｎｍになっ
た透明な第１電極１２を形成し、この第１電極１２の上
に、銅フタロシアニンからなるホール注入層１３ａと、
Ｎ，Ｎ’−ジフェニル−Ｎ，Ｎ’−ビス（３−メチルフ
ェニル）−１，１’−ジフェニル−４，４’−ジアミン
（ＴＰＤ）からなるホール輸送層１３ｂと、トリス（８
−ヒドロキシキノリン）アルミニウム（Ａｌｑ3 ）から
なる発光層１３ｃとが順々に積層されて膜厚が約１００
ｎｍになった有機層１３を形成し、さらにこの有機層１
３の上に、厚みが２ｎｍになったＬｉＦ層１４ａと厚み
が１００ｎｍになったアルミニウム層１４ｂとからなる
第２電極１４を形成し、その後は、図示していないが、
一般に行われているように、紫外線硬化樹脂を用いた封
止処理を行って、有機エレクトロルミネッセンス素子を
作製した。(Embodiment) In this embodiment, as shown in FIG. 1, a transparent first substrate having a thickness of 100 nm was formed by using ITO (indium tin oxide) on a transparent substrate 11 made of glass. An electrode 12 is formed, and a hole injection layer 13a made of copper phthalocyanine is formed on the first electrode 12,
A hole transport layer 13b made of N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-diphenyl-4,4'-diamine (TPD), and tris (8
-Hydroxyquinoline) aluminum (Alq 3 ) and a light emitting layer 13c are sequentially stacked to have a film thickness of about 100.
to form an organic layer 13 having a thickness of
3 is formed with a second electrode 14 composed of a LiF layer 14a having a thickness of 2 nm and an aluminum layer 14b having a thickness of 100 nm, and thereafter, although not shown,
As is generally done, a sealing treatment using an ultraviolet curable resin was carried out to produce an organic electroluminescent element.
【００１９】そして、この実施例においては、不活性な
窒素雰囲気中において、図２（Ａ），（Ｂ）に示すよう
に、上記の有機エレクトロルミネッセンス素子における
第１電極１２と第２電極１４との間に電源２０から電圧
を印加させて、この有機エレクトロルミネッセンス素子
を発光させ、上記の透明基板１１側から有機エレクトロ
ルミネッセンス素子におけるダークスポット等の欠陥部
分ｓを観察し、この状態で、図３に示すように、透明基
板１１側から各欠陥部分ｓに対して、それぞれレーザー
照射装置（図示せず）によりスポット径が５μｍ、エネ
ルギーが０．３ｍＪ／パルス、波長が５３２ｎｍ、パル
ス幅が６ｎｓｅｃのレーザー光Ｌを１パルス照射して、
有機エレクトロルミネッセンス素子における各欠陥部分
ｓを除去させた。なお、上記の各欠陥部分ｓの大きさは
直径が２μｍ程度であり、上記のレーザー光の照射によ
り欠陥部分ｓにおける有機層１３及び第２電極１４が除
去された。In this embodiment, as shown in FIGS. 2A and 2B, in the inert nitrogen atmosphere, the first electrode 12 and the second electrode 14 in the organic electroluminescence device described above are connected to each other. During this period, a voltage is applied from the power source 20 to cause the organic electroluminescence element to emit light, and the defect portion s such as a dark spot in the organic electroluminescence element is observed from the transparent substrate 11 side, and in this state, As shown in FIG. 3, a spot diameter of 5 μm, an energy of 0.3 mJ / pulse, a wavelength of 532 nm, and a pulse width of 6 nsec are applied from the transparent substrate 11 side to each defect portion s by a laser irradiation device (not shown). Irradiate one pulse of laser light L,
Each defective portion s in the organic electroluminescence element was removed. The size of each defect portion s was about 2 μm in diameter, and the organic layer 13 and the second electrode 14 in the defect portion s were removed by the irradiation of the laser beam.
【００２０】次いで、このように欠陥部分ｓが除去され
た有機エレクトロルミネッセンス素子を真空チャンバー
（図示せず）に移し、上記のように欠陥部分ｓが除去さ
れた空間部分及び上記の第２電極１４上にスパッタリン
グによって、図４に示すように、絶縁性で透湿性の低い
窒化ケイ素からなる保護材１５を設けた。Then, the organic electroluminescence device from which the defective portion s is thus removed is transferred to a vacuum chamber (not shown), and the space portion from which the defective portion s is removed as described above and the second electrode 14 described above. As shown in FIG. 4, a protective material 15 made of silicon nitride, which is insulative and low in moisture permeability, was provided on the upper surface by sputtering.
【００２１】そして、この実施例に示すように、欠陥部
分ｓを除去して窒化ケイ素の保護材１５を設けた有機エ
レクトロルミネッセンス素子と、欠陥部分ｓを除去しな
かった有機エレクトロルミネッセンス素子とを、それぞ
れ大気中において、室温で１０日間放置して観察したと
ころ、実施例の有機エレクトロルミネッセンス素子にお
いては、上記のように欠陥部分ｓを除去して窒化ケイ素
の保護材１５を設けた部分の変化は殆どなかったが、欠
陥部分ｓを除去しなかった有機エレクトロルミネッセン
ス素子においては、当初２μｍ程度の大きさであった欠
陥部分ｓが拡大して１０μｍ程度の大きさになってい
た。Then, as shown in this embodiment, an organic electroluminescent element in which the defective portion s is removed and the silicon nitride protective material 15 is provided, and an organic electroluminescent element in which the defective portion s is not removed are formed. When observed in the atmosphere at room temperature for 10 days, in the organic electroluminescence device of the example, the change in the portion where the defective portion s is removed and the protective material 15 of silicon nitride is provided as described above is In the organic electroluminescence device in which the defective portion s was not removed, although it was scarcely present, the defective portion s which was initially about 2 μm was enlarged to be about 10 μm in size.
【００２２】[0022]
【発明の効果】以上詳述したように、この発明における
有機エレクトロルミネッセンス素子の製造方法において
は、透明基板の上に、第１電極と、発光層を含む１以上
の有機層と、第２電極とが設けられた有機エレクトロル
ミネッセンス素子における欠陥部分に対して、上記の透
明基板側からレーザー光を照射させて、この欠陥部分を
除去するようにしたため、この有機エレクトロルミネッ
センス素子を発光させた場合に、導電性の高い欠陥部分
にリーク電流が流れて発光輝度が低下したり、ダークス
ポット等の欠陥部分が次第に拡大したりするのが抑制さ
れ、良好な発光が安定して行えるようになった。As described above in detail, in the method of manufacturing an organic electroluminescence device according to the present invention, the first electrode, the one or more organic layers including the light emitting layer, and the second electrode are provided on the transparent substrate. With respect to the defective portion in the organic electroluminescent element provided with, by irradiating the laser light from the transparent substrate side, so as to remove the defective portion, when the organic electroluminescent element is caused to emit light. Further, it is possible to prevent a leakage current from flowing through a defective portion having high conductivity and reduce the emission luminance, and to gradually expand a defective portion such as a dark spot, and it is possible to stably emit good light.
【００２３】また、上記のように透明基板側からレーザ
ー光を照射させて、有機エレクトロルミネッセンス素子
中における欠陥部分を除去するにあたり、有機エレクト
ロルミネッセンス素子を発光させた状態で行うと、ダー
クスポット等の欠陥部分を発見しながら、レーザー光を
欠陥部分に対して正確に照射させて、欠陥部分を簡単に
除去できるようになった。Further, in removing the defective portion in the organic electroluminescence element by irradiating the laser light from the transparent substrate side as described above, when the organic electroluminescence element is made to emit light, dark spots and the like are generated. While finding the defective portion, the defective portion can be easily removed by accurately irradiating the defective portion with laser light.
【図１】この発明の実施例において作製した有機エレク
トロルミネッセンス素子の構造を示した概略説明図であ
る。FIG. 1 is a schematic explanatory view showing the structure of an organic electroluminescence element produced in an example of the present invention.
【図２】この発明の実施例において、有機エレクトロル
ミネッセンス素子中における欠陥部分を観察する状態を
示した概略説明図である。FIG. 2 is a schematic explanatory view showing a state of observing a defective portion in the organic electroluminescence element in the example of the present invention.
【図３】この発明の実施例において、透明基板側からレ
ーザー光を照射して、有機エレクトロルミネッセンス素
子中における欠陥部分を除去する状態を示した概略説明
図である。FIG. 3 is a schematic explanatory view showing a state of irradiating a laser beam from the transparent substrate side to remove a defective portion in the organic electroluminescence element in the example of the present invention.
【図４】この発明の実施例において、欠陥部分が除去さ
れた空間部分及び第２電極上に絶縁性で透湿性の低い保
護材を設けた状態を示した概略説明図である。FIG. 4 is a schematic explanatory view showing a state in which a protective material having an insulating property and a low moisture permeability is provided on the second electrode and the space portion where the defective portion is removed in the embodiment of the present invention.
１１ 透明基板 １２ 第１電極 １３ 有機層 １３ｃ 発光層 １４ 第２電極 １５ 保護材 Ｌ レーザー光 ｓ 欠陥部分 11 Transparent substrate 12 First electrode 13 organic layers 13c light emitting layer 14 Second electrode 15 Protective material L laser light s defective part
Claims (3)
含む１以上の有機層と、第２電極とが設けられた有機エ
レクトロルミネッセンス素子を製造するにあたり、上記
の透明基板側からレーザー光を照射させて、有機エレク
トロルミネッセンス素子中における欠陥部分を除去する
ことを特徴とする有機エレクトロルミネッセンス素子の
製造方法。1. When manufacturing an organic electroluminescence device in which a first electrode, one or more organic layers including a light emitting layer, and a second electrode are provided on a transparent substrate, from the transparent substrate side, A method for producing an organic electroluminescence device, which comprises irradiating a laser beam to remove a defective portion in the organic electroluminescence device.
ネッセンス素子の製造方法において、上記の有機エレク
トロルミネッセンス素子を発光させた状態で、透明基板
側からレーザー光を照射させて、有機エレクトロルミネ
ッセンス素子中における欠陥部分を除去することを特徴
とする有機エレクトロルミネッセンス素子の製造方法。2. The method for manufacturing an organic electroluminescent device according to claim 1, wherein the organic electroluminescent device is irradiated with laser light from the transparent substrate side in a state where the organic electroluminescent device emits light. A method for manufacturing an organic electroluminescence device, which comprises removing a defective portion.
ロルミネッセンス素子の製造方法において、レーザー光
を照射させて除去した欠陥部分に、絶縁性で透湿性の低
い保護材を設けることを特徴とする有機エレクトロルミ
ネッセンス素子の製造方法。3. The method for manufacturing an organic electroluminescence element according to claim 1, wherein a defective portion removed by irradiation with laser light is provided with an insulating and low moisture-permeable protective material. Manufacturing method of organic electroluminescence device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019632A JP2003217849A (en) | 2002-01-29 | 2002-01-29 | Manufacturing method for organic electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019632A JP2003217849A (en) | 2002-01-29 | 2002-01-29 | Manufacturing method for organic electroluminescence element |
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| Publication Number | Publication Date |
|---|---|
| JP2003217849A true JP2003217849A (en) | 2003-07-31 |
Family
ID=27654270
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006164542A (en) * | 2004-12-02 | 2006-06-22 | Pioneer Electronic Corp | Organic electroluminescent display panel and its manufacturing method |
| JP2009193782A (en) * | 2008-02-13 | 2009-08-27 | Aitesu:Kk | Repair device and repair method of organic el panel |
| JP2009199851A (en) * | 2008-02-21 | 2009-09-03 | Aitesu:Kk | Repairing device and method of organic electroluminescent panel |
| JP2011081966A (en) * | 2009-10-05 | 2011-04-21 | Toshiba Mobile Display Co Ltd | Organic el device and method of manufacturing the same |
| JP2011134489A (en) * | 2009-12-22 | 2011-07-07 | Hitachi High-Technologies Corp | Facilities and method for inspecting lighting of organic el display substrate, device and method for inspecting/correcting defect in organic el display substrate, and system and method for manufacturing organic el display |
| JP2014175117A (en) * | 2013-03-07 | 2014-09-22 | Kaneka Corp | Organic el device |
-
2002
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006164542A (en) * | 2004-12-02 | 2006-06-22 | Pioneer Electronic Corp | Organic electroluminescent display panel and its manufacturing method |
| JP4538304B2 (en) * | 2004-12-02 | 2010-09-08 | パイオニア株式会社 | Organic electroluminescence display panel and manufacturing method thereof |
| JP2009193782A (en) * | 2008-02-13 | 2009-08-27 | Aitesu:Kk | Repair device and repair method of organic el panel |
| JP2009199851A (en) * | 2008-02-21 | 2009-09-03 | Aitesu:Kk | Repairing device and method of organic electroluminescent panel |
| JP2011081966A (en) * | 2009-10-05 | 2011-04-21 | Toshiba Mobile Display Co Ltd | Organic el device and method of manufacturing the same |
| JP2011134489A (en) * | 2009-12-22 | 2011-07-07 | Hitachi High-Technologies Corp | Facilities and method for inspecting lighting of organic el display substrate, device and method for inspecting/correcting defect in organic el display substrate, and system and method for manufacturing organic el display |
| JP2014175117A (en) * | 2013-03-07 | 2014-09-22 | Kaneka Corp | Organic el device |
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