JP2003217423A - 高出力微細加工スイッチ - Google Patents

高出力微細加工スイッチ

Info

Publication number
JP2003217423A
JP2003217423A JP2002304590A JP2002304590A JP2003217423A JP 2003217423 A JP2003217423 A JP 2003217423A JP 2002304590 A JP2002304590 A JP 2002304590A JP 2002304590 A JP2002304590 A JP 2002304590A JP 2003217423 A JP2003217423 A JP 2003217423A
Authority
JP
Japan
Prior art keywords
signal path
plate
switch
mems switch
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002304590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003217423A5 (enExample
Inventor
Marvin Glenn Wong
マーヴィン・グレン・ウォン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2003217423A publication Critical patent/JP2003217423A/ja
Publication of JP2003217423A5 publication Critical patent/JP2003217423A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
JP2002304590A 2001-10-31 2002-10-18 高出力微細加工スイッチ Pending JP2003217423A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/004,034 US20040031670A1 (en) 2001-10-31 2001-10-31 Method of actuating a high power micromachined switch
US10/004034 2001-10-31

Publications (2)

Publication Number Publication Date
JP2003217423A true JP2003217423A (ja) 2003-07-31
JP2003217423A5 JP2003217423A5 (enExample) 2005-12-02

Family

ID=21708803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002304590A Pending JP2003217423A (ja) 2001-10-31 2002-10-18 高出力微細加工スイッチ

Country Status (5)

Country Link
US (1) US20040031670A1 (enExample)
JP (1) JP2003217423A (enExample)
DE (1) DE10232927A1 (enExample)
GB (1) GB2384363B (enExample)
TW (1) TW535184B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295728C (zh) * 2004-09-20 2007-01-17 东南大学 低阈值直交流可分的微电子机械开关及其制造方法
CN100373516C (zh) * 2004-09-15 2008-03-05 中国科学院上海微系统与信息技术研究所 翘曲膜结构的单刀双掷射频和微波微机械开关及制作方法
EP2061056A2 (en) 2007-11-13 2009-05-20 Semiconductor Energy Laboratory Co., Ltd. MEMS switch
US8203686B2 (en) 2008-02-06 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a microstructure and method for manufacturing the same
US8953120B2 (en) 2011-01-07 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US9306129B2 (en) 2010-10-25 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element unit and display device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050225412A1 (en) * 2004-03-31 2005-10-13 Limcangco Naomi O Microelectromechanical switch with an arc reduction environment
US7503989B2 (en) 2004-12-17 2009-03-17 Hewlett-Packard Development Company, L.P. Methods and systems for aligning and coupling devices
US7429864B2 (en) 2004-12-17 2008-09-30 Hewlett-Packard Development Company, L.P. Systems and methods for rectifying and detecting signals
US7391090B2 (en) 2004-12-17 2008-06-24 Hewlett-Packard Development Company, L.P. Systems and methods for electrically coupling wires and conductors
US7521784B2 (en) 2004-12-17 2009-04-21 Hewlett-Packard Development Company, L.P. System for coupling wire to semiconductor region
CN101606213A (zh) * 2007-11-14 2009-12-16 松下电器产业株式会社 机电元件及使用该机电元件的电气设备
WO2022243746A1 (en) 2021-05-18 2022-11-24 Analog Devices International Unlimited Company Active charge bleed methods for mems switches
WO2022245797A1 (en) 2021-05-18 2022-11-24 Analog Devices International Unlimited Company Improved mems switch for rf applications

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US6100477A (en) * 1998-07-17 2000-08-08 Texas Instruments Incorporated Recessed etch RF micro-electro-mechanical switch
JP3119255B2 (ja) * 1998-12-22 2000-12-18 日本電気株式会社 マイクロマシンスイッチおよびその製造方法
US6323447B1 (en) * 1998-12-30 2001-11-27 Agilent Technologies, Inc. Electrical contact breaker switch, integrated electrical contact breaker switch, and electrical contact switching method
US6058027A (en) * 1999-02-16 2000-05-02 Maxim Integrated Products, Inc. Micromachined circuit elements driven by micromachined DC-to-DC converter on a common substrate
US6160230A (en) * 1999-03-01 2000-12-12 Raytheon Company Method and apparatus for an improved single pole double throw micro-electrical mechanical switch
JP3137112B2 (ja) * 1999-04-27 2001-02-19 日本電気株式会社 マイクロマシンスイッチおよびその製造方法
US6373356B1 (en) * 1999-05-21 2002-04-16 Interscience, Inc. Microelectromechanical liquid metal current carrying system, apparatus and method
US6143997A (en) * 1999-06-04 2000-11-07 The Board Of Trustees Of The University Of Illinois Low actuation voltage microelectromechanical device and method of manufacture
US6307452B1 (en) * 1999-09-16 2001-10-23 Motorola, Inc. Folded spring based micro electromechanical (MEM) RF switch
US6529093B2 (en) * 2001-07-06 2003-03-04 Intel Corporation Microelectromechanical (MEMS) switch using stepped actuation electrodes
US6512322B1 (en) * 2001-10-31 2003-01-28 Agilent Technologies, Inc. Longitudinal piezoelectric latching relay
US6515404B1 (en) * 2002-02-14 2003-02-04 Agilent Technologies, Inc. Bending piezoelectrically actuated liquid metal switch
US6657525B1 (en) * 2002-05-31 2003-12-02 Northrop Grumman Corporation Microelectromechanical RF switch

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373516C (zh) * 2004-09-15 2008-03-05 中国科学院上海微系统与信息技术研究所 翘曲膜结构的单刀双掷射频和微波微机械开关及制作方法
CN1295728C (zh) * 2004-09-20 2007-01-17 东南大学 低阈值直交流可分的微电子机械开关及其制造方法
EP2061056A2 (en) 2007-11-13 2009-05-20 Semiconductor Energy Laboratory Co., Ltd. MEMS switch
US8324694B2 (en) 2007-11-13 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. MEMS switch
US8203686B2 (en) 2008-02-06 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a microstructure and method for manufacturing the same
US9306129B2 (en) 2010-10-25 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element unit and display device
US8953120B2 (en) 2011-01-07 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US9857628B2 (en) 2011-01-07 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Display device

Also Published As

Publication number Publication date
TW535184B (en) 2003-06-01
GB0223353D0 (en) 2002-11-13
DE10232927A1 (de) 2003-05-22
GB2384363B (en) 2006-05-24
US20040031670A1 (en) 2004-02-19
GB2384363A (en) 2003-07-23

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