JP2003209229A - Method of manufacturing silicon crystalline thin film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable the formation of a high-quality crystalline silicon thin film on a substrate of a different kind at a low cost. <P>SOLUTION: An undercoat layer (2) is formed on a substrate (1) for formation of a thin film. A crystalline layer (3) is formed on a part or whole of the top thereof, and a fixing substrate (4) is bonded on top thereof. Then these are separated from the substrate (1) by removing the undercoat layer (2) to obtain a silicon crystalline thin film integrally formed with the fixing substrate (4). <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an SOI (Silicon
Semiconductor elements using On Insulator) substrates and TFTs (Th
in Film Transistor), a method for manufacturing a silicon-based crystal thin film suitable for manufacturing a semiconductor device such as a solar cell.

[0002]

2. Description of the Related Art An element having a crystalline silicon layer on a heterogeneous substrate is known as a material suitable for a semiconductor device such as a solar cell or a semiconductor element on an SOI (Silicon On Insulator) substrate. By using this, it becomes easy to increase the area of the element in the solar cell. Moreover, the operating frequency of the MOS (MIS) type field effect transistor formed on the SOI can be increased by reducing the stray capacitance. It is also possible to make it latch-up free. From this,
The use of the SOI substrate has the advantage that high speed circuit operation and high reliability can be expected.

Usually, in order to obtain excellent characteristics in a semiconductor device having this structure, it is necessary to improve the quality of the crystalline silicon layer. Therefore, it is generally formed at a high temperature.

Conventionally, a crystalline silicon semiconductor used in a thin film device such as a MOS (MIS) field effect transistor on a thin film is a plasma CVD method or a thermal CV method on an insulating substrate.
The amorphous silicon formed by the method D was crystallized by applying a heat treatment in an electric furnace.
However, this method requires heat treatment at a high temperature of 600 ° C. or higher for 12 hours or longer. In order to form by this method, it is necessary to use an expensive heat-resistant substrate such as quartz that can withstand high temperatures, and there is a limit to cost reduction.

As a method for solving this problem, a method has been proposed in which an amorphous silicon layer grown on a substrate is melted and crystallized by laser annealing or the like, and a crystalline silicon layer is formed thereon. This method is described by K. Yamamoto et al.
4 IEEE First World Conference on Photovoltaic Ener
gy Conversion (Hawaii, 1994) P.1575 to 1578, which is said to enable the use of low-cost substrates because the rise in substrate temperature is suppressed.

However, according to this method, the size of the crystal that can be formed is about several μm in particle size, and its use is limited. In recent years, the crystal grain size has been expanded, and it has been reported that the size exceeds 100 μm.
There are no examples that exceed the angle, and it is impossible to form uniform crystals on the entire surface of the substrate that exceeds 30 cm. Further, there is a problem that a crystal region having a small grain size is formed around the crystal formed by this method, and it can be said that the practicality is low also from this point.

On the other hand, in recent years, a photoelectric conversion element using a thin film containing crystalline silicon such as polycrystalline silicon or microcrystalline silicon has been actively developed. In these devices, a crystalline silicon thin film having good crystallinity is formed on an inexpensive substrate by a low temperature process, and this is used for a photoelectric conversion device to reduce cost and improve performance. By using this crystalline silicon thin film for a photoelectric conversion element, the photodegradation that is a problem in the amorphous silicon photoelectric conversion element is not observed, and even long-wavelength light, which is not sensitive in the amorphous photoelectric conversion element, can be electrically converted. Can be converted into static energy. This technology is expected to be applicable not only to photoelectric conversion elements but also to photoelectric conversion devices such as optical sensors.

In this silicon crystal photoelectric conversion element, a method of directly depositing a crystal silicon thin film by plasma CVD is generally used. With this technique, 30
It is known that crystalline silicon can be formed on a substrate at a low temperature of 0 ° C. or lower, and it is said to be effective for cost reduction.

In this method, as a plasma CVD formation condition, a silane-based source gas is diluted with hydrogen about 15 times or more, and a plasma reaction chamber pressure is set to 10 mTorr to 10To.
rr, the substrate temperature is 150 ° C to 400 ° C, preferably 300
Film formation is controlled within the range of ℃ or less. As a result, a crystalline silicon thin film is formed on the substrate. According to this method, a crystalline silicon film can be formed on a low-cost glass substrate or the like, and a low-cost photoelectric conversion device can be manufactured. Although a method for producing a silicon thin film photovoltaic element containing a crystal component has been widely tried by this method, it is clear that the crystal component contained in the silicon thin film by this method cannot be about 80% or more. Has become. Further, the particle size of the film is almost the same as the film thickness. For these reasons, the thin film formed by this method is not suitable for use as, for example, a thin film crystal substrate for a thin film field effect transistor. Also, when used as a solar cell, it was difficult to achieve an efficiency exceeding 12% only with a crystalline thin film formed by the plasma CVD method.

As a method for growing a crystalline silicon layer,
The phenomenon of introducing a catalytic element into amorphous silicon and crystallizing it by heat treatment has been reported by RC Cammarata et al. [J. Mater. Res., Vol.5, No.10 (199)].
p.2133-2138]. According to this method, it is said that it is possible to form a film of crystalline silicon at a low temperature and at a high speed, and particularly it is possible to crystallize at a low temperature by introducing a trace amount of Ni metal. According to this method, when a thin film having a thickness of about 100 nm such as a TFT element is targeted, the crystallization proceeds in the in-plane direction by several μm, so that a high-quality crystal oriented in the in-plane direction can be obtained. L. k. Sam
Have been confirmed by [Appl.Phys.Lett., Vol.74, N
o.13 (1999) p.1866-1868]. Further, as a method of applying this oriented growth, Japanese Patent Laid-Open No. 6-244104 discloses a method of T
By selectively disposing a metal catalyst in the vicinity of the FT element position and subjecting it to heat treatment, the amorphous silicon is crystallized,
A method has also been proposed in which an element is formed in a grain of a crystal to improve performance.

However, even in the method of introducing these catalytic elements, heat treatment at least at 500 to 600 ° C. is required. This temperature is a temperature range of whether irreversible deformation occurs when an inexpensive glass substrate is used.
Further, when a large-area glass substrate is used, this irreversible deformation is likely to occur, and the heat treatment at 500 ° C. to 600 ° C. has been a major obstacle in mass production.

On the other hand, as a method for forming an SOI substrate,
A method is known in which porous silicon is formed on a single crystal substrate, a single crystal silicon thin film is epitaxially grown on the porous silicon, an insulating substrate is bonded to the upper portion, and then the single crystal substrate and the porous silicon are removed. It is described in Japanese Patent No. 235651. Further, as a method for forming a low-cost thin film element, Japanese Patent Laid-Open No. 8-213645 discloses
A method of recycling a single crystal substrate for epitaxial growth is disclosed. These methods are excellent in that a thin film having excellent crystallinity can be formed on a different type of substrate, and a crystalline thin film having excellent characteristics can be formed.

[0013]

However, in the method disclosed in Japanese Patent Laid-Open No. 7-235651, since a single crystal silicon substrate is required for the thin film forming substrate, it is limited to use only for forming an expensive semiconductor element substrate. To be Further, even when the single crystal substrate disclosed in Japanese Patent Laid-Open No. 8-213645 is reused, there is a limit to the reuse of the single crystal substrate, and there is a concern that the quality of the thin film may be deteriorated by repeated reuse, and the area may be increased. There was a problem.

From the above, there is a problem in forming a low-cost crystalline silicon thin film on a heterogeneous substrate.

Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a method for producing a silicon-based crystal thin film for forming a high-quality crystalline silicon thin film on a heterogeneous substrate at low cost.

[0016]

In order to achieve the above object, the present invention is configured as follows.

In the method of manufacturing a silicon-based crystal thin film according to the first aspect of the present invention, a base layer is formed on a thin film forming substrate,
It is characterized in that a crystalline silicon-based layer is formed on a part or the entire surface of the upper part thereof, and a fixing substrate is adhered to the upper part thereof, and then the base layer is removed to separate from the substrate.

Here, the crystalline silicon layer means a crystalline silicon layer, a crystalline layer of a silicon compound, a layer containing a crystalline silicon layer, or a layer containing a crystalline layer of a silicon compound. Usually, the underlayer is removed by a solution, and the thin film forming substrate is resistant to this solution. This solution contains hydrogen fluoride. In addition, the material of the thin film forming substrate is usually not the same type of crystal as the silicon-based crystal layer.

According to a second aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the first aspect, the thin film forming substrate has resistance to heat treatment when forming a crystalline silicon-based layer. It is characterized by

According to a third aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the first or second aspect, the thin film forming substrate has a specific gravity of 1 or less.

According to a fourth aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the first aspect, part or all of the crystalline silicon-based layer is formed in an amorphous state. It is characterized by including a step of crystallizing the layer by heat treatment.

According to a fifth aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the fourth aspect, a catalyst element is introduced into at least a part of the amorphous silicon layer in contact with the amorphous silicon layer. To do.

The invention according to claim 6 is the method for producing a silicon-based crystal thin film according to claim 4 or 5, characterized in that the temperature of the heat treatment is equal to or lower than the melting point of silicon.

According to a seventh aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the fourth, fifth or sixth aspect, in the heat treatment, heat treatment is first performed at a temperature not higher than a temperature at which amorphous silicon is crystallized in a solid phase. It is characterized by performing.

According to an eighth aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the first aspect, the underlayer is a layer containing a silicon element, a layer of silicon oxide, or a glass layer containing the adjacent layer. It is characterized by being either.

The invention of claim 9 is characterized in that, in the method for producing a silicon-based crystal thin film according to any one of claims 1 to 8, the underlayer is removed by a solution.

The invention of claim 10 is the method for producing a silicon-based crystal thin film according to claim 9, wherein the solution contains hydrogen fluoride.

An eleventh aspect of the invention is the method for producing a silicon-based crystal thin film according to the first or eighth aspect, wherein the underlayer has a structure in which two or more layers having different elements are laminated. It is characterized in that the layer formed on the thin film forming substrate side is more easily dissolved in the solution for removing the underlayer than the layer formed on the upper side thereof.

According to a twelfth aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the first or the eleventh aspect, the underlayer is formed without containing a catalytic element, and the underlayer is formed after heat treatment. It is characterized by containing a catalytic element.

According to a thirteenth aspect of the present invention, in the method for producing a silicon-based crystal thin film according to the fifth or the twelfth aspect, the catalyst element is Ni, Ge, Fe, Co, Pt, Au, Pd,
It is characterized by containing at least one kind of Al.

<Main points of the invention> In order to solve the above problems, the present invention is basically based on the following steps of forming a crystalline silicon thin film.

(1) An underlayer is formed on a thin film forming substrate (hereinafter referred to as a forming substrate).

(2) A crystalline silicon-based layer is formed on the underlayer.

(3) A fixing substrate is adhered on the crystalline silicon-based layer.

(4) In the sample of the fixing substrate / crystalline silicon-based layer / underlayer / forming substrate formed in the above (1) to (3), the forming substrate and the crystalline silicon are removed by removing the underlayer. Separate the system layers.

Generally, a heat treatment of at least 500 ° C. and, in the case of high temperature, 1000 ° C. is required to form a crystalline silicon layer. By using the above method, a substrate that can withstand high temperature can be used as a forming substrate, and a fixing substrate can be used as a final product substrate.
An inexpensive substrate such as a glass substrate or a plastic substrate can be used as the substrate. Here, the step (4) can be performed by using a solution etching for separating the crystalline silicon-based layer and the substrate and using a substance removed by the solution etching for the underlayer. As an example,
A mixed solution of hydrofluoric acid and nitric acid can be used for the solution, and phosphorus glass can be used for the underlayer. The fixing substrate may be any as long as it has resistance to the above solution, and a Teflon (registered trademark) resin substrate or the like can be used for hydrofluoric acid. Further, as a matter of course, when the product needs heat resistance, a heat resistant substrate such as a single crystal substrate, a polycrystalline substrate, or a quartz substrate may be used as the fixing base. Further, with this structure, it becomes possible to bond a very thin crystalline silicon-based layer to the fixing substrate. For example, several tens of nm on a heterogeneous substrate that has heat resistance only up to low temperature
The crystalline silicon-based layer of can be produced.

The forming substrate in the above step (1) may be one that is resistant to the solution and can withstand the heat treatment temperature for forming the crystalline silicon-based layer. As an example, ceramics or the like can be used. Further, when it is necessary to improve the solution resistance or the resistance when forming the crystalline silicon-based layer, it suffices to perform the coating treatment on the substrate surface. If there is a problem with the chemical resistance or reactivity of the substrate due to the reuse of the forming substrate,
Since the recoating process only needs to be performed, the number of times the forming substrate is reused can be set to an almost unlimited number. When separating the silicon-based layer and the substrate, if the specific gravity of the forming substrate is 1 or less, the forming substrate spontaneously floats from the solution during etching with the solution, which is advantageous in that workability is increased.

There are several possible methods for forming the crystalline silicon-based layer in the step (2). As an example, in the step (2), it is desirable to use a method of forming an amorphous film and then subjecting it to heat treatment to form a crystalline silicon-based layer. In order to obtain a high quality thin film, it is desirable that minute crystal nuclei are formed in the amorphous material. By using this method, it is possible to obtain a crystalline silicon film having crystal grains much larger in the lateral direction than the film thickness. The method for forming this amorphous silicon is MBE,
Thermal CVD, sputtering, plasma CVD, cat-CVD
Any method such as amorphous silicon can be formed.

In order to obtain a silicon-based crystal thin film at a lower cost, first, amorphous silicon is formed on the underlayer, and a part of it, for example, Ni is formed as a catalyst element in a line shape and heat treatment is performed to crystallize the film. It is desirable to use the above method. By using this method, the crystalline silicon layer can be formed at a faster speed than in the case of forming by solid phase epitaxial growth, and the manufacturing cost can be reduced. As the catalytic element, besides Ni, Ge, Fe,
Examples include Co, Pt, Au, Pd, Al and the like. Furthermore, when crystallization is performed using a catalyst element, the catalyst element after crystallization is segregated in the underlayer, and the amount of the catalyst element remaining in the crystalline silicon layer can be reduced. The getter effect of the underlayer can be increased by adding phosphorus to the underlayer.

In the above step (3), there are various methods for adhering the fixing substrate to the side of the crystalline silicon layer that faces the underlayer side. It is desirable to use an insulating substance such as a glass substrate or a plastic substrate for the fixing substrate, but it may not be resistant to the solution. In this case, it is necessary to form a coating having resistance, but conversely, by applying this coating, any substance can be used as the fixing substrate. When the fixing substrates made of such a material are stuck together, they can be adhered by a method of adhering them using a resin adhesive or the like.

The above step (4) is a step of peeling the silicon-based layer from the substrate, and this step is peeled by removing the base layer. When the crystalline silicon layer adhered to the fixing substrate is used as an electronic device after this step, processing as an electronic device, such as a wiring step, may be performed at a temperature lower than the heat resistant temperature of the fixing substrate.

The semiconductor thin film device thus formed can be applied to high quality solar cells, TFT substrates, SOI substrates and the like, and the present invention contributes to the supply of high quality and low cost semiconductor devices. It is a thing.

[0043]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to examples. The following examples are examples of the present invention, and the present invention is not limited thereto.

<Embodiment 1 (FIG. 1)> FIG. 1 shows a first embodiment. In this embodiment, a basic structure of the present invention will be described.

In this embodiment, as shown in FIG.
First, a glass (phosphorus glass layer) 2 having a phosphorus concentration of 1% is formed as a base layer on a single crystal silicon substrate 1 which is a formation substrate.
Of 10 μm was formed. As a crystalline silicon-based layer, a poly-Si thin film (polycrystalline silicon layer) 3 having a thickness of 10 μm was formed thereon by thermal CVD. The film formation temperature of the poly-Si film was 700 ° C.

Thereafter, a quartz substrate 4 as a fixing substrate was attached to the upper portion (FIG. 1 (b)).

Then, when this sample is put into a hydrofluoric acid solution, the phosphorus glass layer 2 is dissolved, and as shown in FIG. 1 (c), the single crystal silicon substrate 1 and the crystalline silicon-based layer which are the formation substrates. Is separated from the poly-Si thin film 3 which is
The poly-Si thin film 3 was adhered onto the quartz substrate 4.

By the process of the present embodiment, 1 is formed on the quartz substrate 4.
A 0 μm poly-Si thin film (polycrystalline silicon layer) 3 could be formed.

<Embodiment 2 (FIG. 2)> FIG. 2 shows a second embodiment. In this embodiment, the poly-S in the first embodiment is used.
For the formation of i film, SPC (Solid Phase Crystallizatio
n) was used.

As shown in FIG. 2A, as in Example 1, first, a glass (phosphorus glass layer) 2 having a phosphorus concentration of 1% was formed as a base layer on a single crystal silicon substrate 1 as a forming substrate. 10 μm was formed. An amorphous silicon layer 5 having a thickness of 10 μm was formed on the phosphor glass layer 2 by using plasma CVD. Plasma CVD is used to form this amorphous silicon.
Not only sputter, thermal CVD, MBE, cat-C
Any method such as VD can be used as long as amorphous silicon can be formed.

After that, when heat treatment was performed at 650 ° C. for 24 hours, all of the amorphous silicon layer 5 was crystallized to become a crystalline silicon layer 6, as shown in FIG.

This film was also adhered to the quartz substrate 4 as the fixing substrate in the same manner as in Example 1 (FIG. 2).
(C)), put this sample in the hydrofluoric acid solution,
By dissolving the phosphorous glass layer 2, the single crystal silicon substrate 1 as the formation substrate and the crystalline silicon layer 6 as the crystalline silicon-based layer were separated, and the crystalline silicon layer 6 could be peeled (see FIG. d)).

When the amorphous silicon layer 5 was crystallized in a state containing germanium, it could be crystallized at a low temperature, and the crystalline silicon layer 6 became crystalline SiGe. In this case as well, similarly to Example 1, after being attached to the quartz substrate 4, it could be peeled off, and crystalline SiGe could be formed on the quartz substrate 4.

Similarly, when the amorphous silicon is made to contain carbon, it is necessary to perform heat treatment at a higher temperature in order to crystallize the amorphous silicon. The crystal layer 6 crystallized by this method contained crystalline SiC. It was possible to peel this as well.

The quartz substrate 4 was attached to the above samples, but the attached substrate is a plastic substrate or the like.
Any material may be used as long as it can fix the crystalline silicon-based layer after peeling.

<Third Embodiment> FIG. 3 shows a third embodiment.
In this example, a ceramic substrate 7 was used as the formation substrate instead of the single crystal silicon substrate 1 used in Example 1, as shown in FIG. This ceramic substrate 7
A phosphorus glass layer with a phosphorus concentration of 5% is formed on top of the
The surface is flattened by performing heat treatment at 000 ° C. or higher. The 0.1% phosphorus glass layer 8a and the phosphorus concentration is phosphorus concentration as a top on the underlying layer has a laminated structure 8 of ¹ × 10 1 ⁸ cm ^-3 and a silicon oxide film 8b. In this laminated structure 8, the phosphorus glass layer 8a having a phosphorus concentration of 0.1% is used as the formation substrate side, and the phosphorus concentration of 1 × 10 ¹⁸ cm ⁻³ is provided on the upper side thereof.
The silicon oxide film 8b is formed.

After that, the amorphous silicon layer 9 is plasma C
70 nm was formed using VD. The method for forming the amorphous silicon layer 9 may be any method as long as it can form amorphous silicon, as in the second embodiment. Further, a linear Ni layer 10 having a width of 20 μm and a pitch of 250 μm was formed thereon as a catalytic element. In addition to Ni, Ge, Fe, Co, Pt, Au, P
d and Al were effective. Further, a solution or compound containing these elements was also effective.

Next, as shown in FIG. 3B, the sample was heat-treated at 580 ° C. for 12 hours.
As shown in (c), the amorphous silicon layer 9 was crystallized over the entire surface to become a crystalline silicon layer 11.

As for the silicon thin film thus formed, as shown in FIG. 3D, the quartz substrate 4 was adhered and then peeled off as in Example 1. In this embodiment, a mixed solution of hydrofluoric acid and nitric acid is used as the solution.

By adopting the structure of the underlayer described above, the dissolution rate of the phosphorous glass layer 8a is increased by the silicon oxide film 8b.
The dissolution rate is about 500 times that of the silicon oxide film 8b.
1 was covered. As a result, the crystalline silicon layer 11 could be peeled off without the solution dissolving or damaging the crystalline silicon layer 11.

Further, in order to easily peel off this peeling step, very fine holes are formed on the forming substrate 1,
It is also effective to supply the solution from the hole at the time of peeling.
After that, the remaining silicon oxide layer in the mixed solution of hydrofluoric acid and nitric acid was removed, and the surface of the crystalline silicon layer 11 was polished to complete the SOI substrate.

In the peeling process, if the specific gravity of the ceramic substrate was 1 or less, the ceramic substrate was spontaneously peeled in the mixed solution of hydrofluoric acid and nitric acid, and the peeling process was easy.

As a result of the secondary ion analysis (SIMS analysis), after forming amorphous silicon directly on the glass substrate, Ni having the same form as that of this embodiment was formed on the surface of the amorphous silicon.
It was confirmed that the silicon thin film formed in this example had a Ni content of about 3 digits less than the silicon thin film crystallized at 80 ° C. for 12 hours. From this, the silicon thin film formed in this example could be a thin film more suitable for electronic devices and the like. In addition, in this embodiment,
When SIMS analysis was performed on the underlayer after the heat treatment for crystallizing the amorphous silicon layer, the presence of Ni was confirmed.

Example 4 (FIG. 3) In this example, a MOS transistor was formed on the silicon thin film (crystalline silicon layer 11) described in Example 3. The gate insulating film was formed by the plasma CVD method, and the source and drain portions were formed by the ion implantation method to form a MOS transistor structure. This transistor exhibited the same characteristics as a low-temperature formed Poly-Si TFT transistor crystallized by laser annealing.

<Embodiment 5 (FIG. 4)> FIG. 4 shows a fifth embodiment. In this example, a solar cell element was produced using the silicon thin film (crystalline silicon layer 11) produced in Example 3.

In Example 3, the amorphous silicon layer 9 is
1 x 10 phosphorus¹⁹(Atoms / cm ³) Form including
Then, when crystallization was performed by the method in Example 3,
The crystalline silicon layer 12 becomes a high concentration n-type silicon layer
It was This crystalline silicon layer 12 is processed by the same method as in the third embodiment.
The crystalline silicon layer 12 is formed on the fixing substrate 13.
Structure (FIG. 4A).

In this embodiment, since this silicon layer is used as the base layer of the solar cell, before the fixing base 13 is attached to the crystalline silicon layer 12, as shown in FIG. An electrode 14 was formed on the upper surface, and then a fixing base 13 was attached using a resin adhesive 15.

Crystalline silicon layer 1 thus formed
As shown in FIG. 4B, 1 × 10 ¹⁷ (a
An n-type crystalline silicon layer 16 having a carrier density of toms / cm ³ ) was epitaxially grown by the MBE method. A p-type microcrystalline silicon layer 17 was formed on this by a plasma CVD method.

Then, as shown in FIG. 4C, the ITO film 18 which is a transparent conductive film and the Al electrode 1 which is a metal electrode.
9 was formed into a solar cell.

This solar cell exhibits an open circuit voltage of 0.59 V and a sufficiently large open circuit voltage as a crystalline silicon solar cell,
It was confirmed that crystals with few defects were formed.

[0071]

As described above, according to the present invention, a base layer is formed on a thin film forming substrate, a crystalline silicon based layer is formed on a part or the entire surface of the base layer, and a fixing base is formed on the base layer. After being bonded, the underlayer is removed to separate the substrate from the substrate, so that a silicon-based crystal thin film integral with the fixing substrate can be obtained. Therefore, in a semiconductor device using an SOI substrate, a semiconductor device such as a TFT or a solar cell, a high-quality crystalline silicon layer can be manufactured at low cost.

[Brief description of drawings]

FIG. 1 is a schematic view showing a method for manufacturing a silicon-based crystal thin film in Example 1 of the present invention.

FIG. 2 is a schematic diagram showing a method for manufacturing a silicon-based crystal thin film in Example 2 of the present invention.

FIG. 3 is a schematic diagram showing a method for manufacturing a silicon-based crystal thin film in Example 3 of the present invention.

FIG. 4 is a schematic diagram showing a method for manufacturing a silicon-based crystal thin film in Example 5 of the present invention.

[Explanation of symbols]

1 Single crystal silicon substrate (formation substrate) 2 Phosphorus glass layer (base layer) 3 poly-Si thin film (crystalline silicon-based layer) 4 Quartz substrate (fixing substrate) 5 Amorphous silicon layer 6 Crystal silicon layer 7 Ceramic substrate 8 laminated structure 8a Phosphorus glass layer 8b Silicon oxide film 9 Amorphous silicon layer 10 Ni layer 11 Crystal silicon layer 12 Crystal silicon layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 31/04 H01L 29/78 627G 31/042 627D (72) Inventor Yu Sasaki Ichi Otemachi, Chiyoda-ku, Tokyo F-term (6) No. 6-1 Nititsu Electric Cable Co., Ltd. GG45 HJ13 PP01 PP34 QQ17 QQ19 QQ28

Claims (13)

[Claims] 1. An underlayer is formed on a thin film forming substrate, a crystalline silicon-based layer is formed on a part or the entire surface of the substrate, and a fixing substrate is adhered on the crystalline silicon-based layer, and then the underlayer is removed. A method for manufacturing a silicon-based crystal thin film, characterized in that the silicon-based crystal thin film is separated from the substrate by the following. 2. The method for producing a silicon-based crystal thin film according to claim 1, wherein the thin-film forming substrate has resistance to a heat treatment when forming the crystalline silicon-based layer. Method for manufacturing silicon-based crystal thin film. 3. The method for producing a silicon-based crystal thin film according to claim 1, wherein the substrate for forming a thin film has a specific gravity of 1 or less. 4. The method for manufacturing a silicon-based crystal thin film according to claim 1, wherein a part or all of the crystalline silicon-based layer is formed in an amorphous state, and the amorphous silicon layer is subjected to a heat treatment. A method for manufacturing a silicon-based crystal thin film, which comprises a step of crystallizing by applying. 5. The method for producing a silicon-based crystal thin film according to claim 4, wherein a catalytic element is introduced into at least a part of the amorphous silicon layer in contact with the amorphous silicon layer. Manufacturing method. 6. The method for producing a silicon-based crystal thin film according to claim 4 or 5, wherein the temperature of the heat treatment is equal to or lower than the melting point of silicon. 7. The method for producing a silicon-based crystal thin film according to claim 4, 5, or 6, wherein in the heat treatment, heat treatment is first performed at a temperature not higher than a temperature at which amorphous silicon is crystallized in a solid phase. A method for manufacturing a silicon-based crystal thin film. 8. The method for manufacturing a silicon-based crystal thin film according to claim 1, wherein the underlayer is any one of a layer containing a silicon element, a layer of silicon oxide, and a glass layer containing a neighboring layer. A method for manufacturing a silicon-based crystal thin film, comprising: 9. The method for producing a silicon-based crystal thin film according to claim 1, wherein the underlayer is removed by a solution. 10. The method for producing a silicon-based crystal thin film according to claim 9, wherein the solution contains hydrogen fluoride. 11. The method for manufacturing a silicon-based crystal thin film according to claim 1 or 8, wherein the underlayer has a structure in which two or more layers having different constituent elements are stacked, and a substrate for forming the thin film. A method for manufacturing a silicon-based crystal thin film, wherein the layer formed on the side is more easily dissolved in a solution that removes the underlayer than the layer formed on the upper side. 12. The method for producing a silicon-based crystal thin film according to claim 1 or 11, wherein the underlayer is formed without containing a catalytic element, and the underlayer contains a catalytic element after heat treatment. A method for manufacturing a silicon-based crystal thin film, comprising: 13. The method for producing a silicon-based crystal thin film according to claim 5, wherein the catalytic element is Ni, Ge, Fe, Co, Pt, Au,
A method of manufacturing a crystalline thin film semiconductor device, comprising at least one of Pd and Al.