JP2003207275A - Crucible, fusing vanadium and its compound - Google Patents

Crucible, fusing vanadium and its compound

Info

Publication number
JP2003207275A
JP2003207275A JP2002007732A JP2002007732A JP2003207275A JP 2003207275 A JP2003207275 A JP 2003207275A JP 2002007732 A JP2002007732 A JP 2002007732A JP 2002007732 A JP2002007732 A JP 2002007732A JP 2003207275 A JP2003207275 A JP 2003207275A
Authority
JP
Japan
Prior art keywords
crucible
vanadium
silicon carbide
compound
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002007732A
Other languages
Japanese (ja)
Inventor
Kazuya Maeba
和也 前場
Atsushi Kanesaka
淳 金坂
Shuji Okada
修二 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2002007732A priority Critical patent/JP2003207275A/en
Publication of JP2003207275A publication Critical patent/JP2003207275A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fusing crucible capable of fusing vanadium and its compound while retaining purity thereof. <P>SOLUTION: In this crucible for fusing vanadium and its compound, a silicon carbide layer is provided on at least an inner face of the crucible made of a material other than silicon carbide. The crucible made of a material of various oxides such as alumina, magnesium oxide, calcium oxide, beryllium oxide, zirconium oxide, and quartz other than silicon carbide, and graphite, and coated with silicon carbide on its inner face, is used as the crucible for fusing vanadium and its compound. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、バナジウム及びバ
ナジウム化合物の熔解に用いるためのルツボに関する。
TECHNICAL FIELD The present invention relates to a crucible for use in melting vanadium and vanadium compounds.

【0002】[0002]

【従来の技術】五酸化バナジウムの原料となるバナジウ
ム鉱石としては、バナジウム雲母、モットラム鉱、カル
ノー石、パトロン鉱、バナジウム鉛鉱などが知られてお
り、一般には、これらの原料石に炭酸ナトリウムを混合
したのち、850℃程度で焙焼し、得た焼成物を温水で
浸出し、濾過してメタバナジウム酸ナトリウム溶液を
得、次いでこの溶液に硫酸を加えてpHを1〜3とし、
ポリバナジウム酸塩を析出させ、続いて、これを乾燥し
て五酸化バナジウムを得る。
2. Description of the Related Art As vanadium ores used as a raw material for vanadium pentoxide, vanadium mica, motterum ore, carnotite, patronite, vanadium lead ore, etc. are known. After mixing, roasting at about 850 ° C., leaching the obtained baked product with warm water and filtering to obtain a sodium metavanadate solution, and then adding sulfuric acid to this solution to adjust the pH to 1 to 3,
Polyvanadate is precipitated and subsequently dried to give vanadium pentoxide.

【0003】五酸化バナジウムをカルシウム還元法して
得られる金属バナジウムは主として合金用添加元素とし
て用いられる。例えば、合金元素としてのバナジウムは
鉄鋼材料の結晶粒の微細化を促し、炭化物を安定化して
その性能を向上させることから、フェロバナジウムの形
で広く使用されている。また、チタン、ジルコニウム、
銅への合金添加元素としても使用されている。
Metal vanadium obtained by the calcium reduction method of vanadium pentoxide is mainly used as an additional element for alloys. For example, vanadium as an alloying element is widely used in the form of ferrovanadium because it promotes the refinement of crystal grains of steel materials and stabilizes carbides to improve their performance. Also, titanium, zirconium,
It is also used as an alloying element to copper.

【0004】一方、五酸化バナジウムは融点が約670
℃と比較的低く、酸化物半導体の一種であって、フェロ
バナジウム及びバナジウム鋼原料として使用されるほ
か、触媒、塗料やインキの乾燥剤、ガラスや陶磁器の光
沢剤などとして使用され、近年ではリチウム電池の電極
材料としても使用されている、従来、五酸化バナジウム
の熔解に際し、ルツボの材質として、一般的に多用され
る鉄鋼材料、MgO、A123、Ti02、CaO、B
eO、黒鉛などの材料でできたルツボを用いた場合、五
酸化バナジウムはこれらの材料と反応し、ルツボ素材が
五酸化バナジウムに対し不純物として混入するという問
題がある。当然、ルツボの浸食も徐々に進行し、ルツボ
の消耗によるコストの上昇をもたらすという問題を生じ
ている。
On the other hand, vanadium pentoxide has a melting point of about 670.
Relatively low at ℃, it is a type of oxide semiconductor and is used as a ferrovanadium and vanadium steel raw material, as a catalyst, a desiccant for paints and inks, and as a brightening agent for glass and ceramics. Conventionally, when melting vanadium pentoxide, which is also used as an electrode material for a battery, a crucible is generally used as a ferrous material such as MgO, A1 2 0 3 , Ti0 2 , CaO, and B.
When a crucible made of a material such as eO or graphite is used, vanadium pentoxide reacts with these materials, and there is a problem that the crucible material is mixed into vanadium pentoxide as an impurity. Naturally, the erosion of the crucible gradually progresses, which causes a problem that the cost is increased due to the consumption of the crucible.

【0005】このように、従来の技術では、バナジウム
及び五酸化バナジウムの反応性が高いために、原料の純
度を維持しつつ熔解し、かつ低コストで熔解するという
双方の目的を同時に達成することが困難であるという課
題を有していた。
As described above, in the conventional technique, since the reactivity of vanadium and vanadium pentoxide is high, it is possible to simultaneously achieve both the objectives of melting while maintaining the purity of the raw material and at a low cost. Had a problem that it was difficult.

【0006】[0006]

【発明が解決しようとする課題】本発明は、かかる従来
の課題にかんがみてなされたもので、バナジウム及びそ
の化合物を、純度を維持しつつ、かつ低コストで熔解す
ることを可能とする熔解用ルツボの提供を目的とする。
DISCLOSURE OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and it is intended for melting vanadium and its compounds while maintaining the purity and at a low cost. The purpose is to provide crucibles.

【0007】[0007]

【課題を解決するための手段】上記課題を解決する本発
明は、炭化ケイ素以外の材料でできたルツボの少なくと
も内面を炭化ケイ素で構成したことを特徴とするもので
ある。本発明において炭化ケイ素以外の材質としてはア
ルミナ、酸化マグネシウム、酸化カルシウム、酸化ベリ
リウム、酸化ジルコニウム、石英等の各種酸化物や黒鉛
等がある。
The present invention for solving the above-mentioned problems is characterized in that at least the inner surface of a crucible made of a material other than silicon carbide is made of silicon carbide. Materials other than silicon carbide in the present invention include various oxides such as alumina, magnesium oxide, calcium oxide, beryllium oxide, zirconium oxide, and quartz, and graphite.

【0008】[0008]

【発明の実施の形態】本発明に係わるバナジウム及びそ
の化合物の熔解用ルツボは、五酸化バナジウム等の熔湯
を保持する受け皿となるルツボ本体として比較的コスト
の低い酸化物や黒鉛などの素材を用い、五酸化バナジウ
ム等の熔湯に直接接触する内面については前記溶湯と反
応を起こさない、あるいは起こしにくい炭化ケイ素から
構成されるものとしているので、熔解原料の純度を維持
した熔解と低コストでの熔解の両方共が同時になしうる
ようになる。
BEST MODE FOR CARRYING OUT THE INVENTION The melting crucible for vanadium and its compounds according to the present invention comprises a relatively low cost material such as oxide or graphite as a crucible body serving as a saucer for holding molten metal such as vanadium pentoxide. Since the inner surface that directly contacts the molten metal such as vanadium pentoxide is made of silicon carbide that does not react with the molten metal or hardly reacts with it, it is possible to maintain the purity of the melting raw material at a low cost. Both of the melting can be done at the same time.

【0009】[0009]

【実施例】次に実施例を用いて本発明をさらに説明す
る。 (実施例)口径200mm、深さ150mmのアルミナ
ルツボ本体の内面に炭化ケイ素をコーティングした熔解
用ルツボに五酸化バナジウムを3Kg入れ、850℃に
加熱して溶解し、その温度で24時間放置し、熔湯が均
一となるようにした。
EXAMPLES Next, the present invention will be further described with reference to examples. (Example) 3 kg of vanadium pentoxide was placed in a melting crucible in which the inner surface of an alumina crucible body having a diameter of 200 mm and a depth of 150 mm was coated with silicon carbide, heated to 850 ° C. to be melted, and allowed to stand at that temperature for 24 hours, The molten metal was made uniform.

【0010】その後、炭化ケイ素製の鋳型内へ熔湯を注
ぎ込み、鋳造を行ない幅100mm、長さ300mm、
厚さ30mmのインゴットを得た。このインゴット中の
アルミナとケイ素の量を分析した。得られた値はAlが
<0.01%と検出限界以下、Siが<0.01であっ
た。また、ルツボ内面を観察したところ、損傷された状
態は確認できなかった。
After that, the molten metal was poured into a mold made of silicon carbide, and casting was performed to obtain a width of 100 mm and a length of 300 mm.
An ingot having a thickness of 30 mm was obtained. The amount of alumina and silicon in this ingot was analyzed. The obtained values were <0.01% for Al, which was below the detection limit, and Si was <0.01. Further, when the inner surface of the crucible was observed, no damaged state could be confirmed.

【0011】(従来例)アルミナルツボの内面を炭化ケ
イ素でコーティングしない以外は実施例と同様にして五
酸化バナジウムを溶解し、インゴットを得た。インゴッ
ト中のアルミナとケイ素の量は、それぞれ0.23、<
0.01であり、ルツボ内面も浸食されていた。
(Conventional Example) Vanadium pentoxide was dissolved in the same manner as in Example 1 except that the inner surface of the alumina crucible was not coated with silicon carbide to obtain an ingot. The amount of alumina and silicon in the ingot was 0.23, <
It was 0.01, and the inner surface of the crucible was also eroded.

【0012】[0012]

【発明の効果】本発明の熔解用ルツボは、アルミナ、酸
化マグネシウム、酸化カルシウム、酸化ベリリウム、酸
化ジルコニウム、石英等の各種酸化物や黒鉛等でできた
安価なルツボの少なくとも内面を炭化ケイ素でコーティ
ングしたものであるので、バナジウムやその化合物を溶
解したときに、熔湯中へのルツボからの不純物混入量が
少なくなり、熔解原料の純度を維持した熔解が可能にな
る。また、ルツボ内面の浸食が少なくなってその分だけ
耐久性が向上する。よって、本発明の溶解用ルツボを用
いれば、低コストでの熔解が可能になる。
INDUSTRIAL APPLICABILITY The melting crucible of the present invention is a cheap crucible made of various oxides such as alumina, magnesium oxide, calcium oxide, beryllium oxide, zirconium oxide, and quartz, and graphite, and at least the inner surface thereof is coated with silicon carbide. Therefore, when vanadium or a compound thereof is dissolved, the amount of impurities mixed from the crucible into the molten metal is reduced, and it becomes possible to carry out melting while maintaining the purity of the melting raw material. In addition, the inner surface of the crucible is less eroded, and the durability is improved accordingly. Therefore, by using the melting crucible of the present invention, it becomes possible to melt at low cost.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K001 AA28 DA14 GA19 GB12 HA07 4K046 BA03 BA08 CB06 CB13    ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4K001 AA28 DA14 GA19 GB12 HA07                 4K046 BA03 BA08 CB06 CB13

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】炭化ケイ素以外の材料でできたルツボの少
なくとも内面に炭化ケイ素層を設けたことを特徴とする
バナジウム及びその化合物を熔解するためのルツボ。
1. A crucible for melting vanadium and its compound, characterized in that a silicon carbide layer is provided on at least the inner surface of a crucible made of a material other than silicon carbide.
【請求項2】炭化ケイ素以外の材質がアルミナ、酸化マ
グネシウム、酸化カルシウム、酸化ベリリウム、酸化ジ
ルコニウム、石英等の各種酸化物や黒鉛等のうち少なく
ともいずれか一つである請求項1記載のルツボ。
2. The crucible according to claim 1, wherein the material other than silicon carbide is at least one of various oxides such as alumina, magnesium oxide, calcium oxide, beryllium oxide, zirconium oxide, and quartz, and graphite.
JP2002007732A 2002-01-16 2002-01-16 Crucible, fusing vanadium and its compound Pending JP2003207275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002007732A JP2003207275A (en) 2002-01-16 2002-01-16 Crucible, fusing vanadium and its compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002007732A JP2003207275A (en) 2002-01-16 2002-01-16 Crucible, fusing vanadium and its compound

Publications (1)

Publication Number Publication Date
JP2003207275A true JP2003207275A (en) 2003-07-25

Family

ID=27646173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002007732A Pending JP2003207275A (en) 2002-01-16 2002-01-16 Crucible, fusing vanadium and its compound

Country Status (1)

Country Link
JP (1) JP2003207275A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101644534B (en) * 2008-08-08 2011-06-22 中国科学院金属研究所 Method for preparing large-capacity calcareous crucible for vacuum induction furnace
KR20160024242A (en) * 2014-08-25 2016-03-04 (주) 은성기연 Method for cultivating microorganism containing high-concentraion vanadium, microorganism cultivated by using thereof and enzyme pill comprising the microorganism
CN112225570A (en) * 2019-07-14 2021-01-15 江苏摩铸特种陶瓷有限公司 Three-layer silicon carbide graphite crucible and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101644534B (en) * 2008-08-08 2011-06-22 中国科学院金属研究所 Method for preparing large-capacity calcareous crucible for vacuum induction furnace
KR20160024242A (en) * 2014-08-25 2016-03-04 (주) 은성기연 Method for cultivating microorganism containing high-concentraion vanadium, microorganism cultivated by using thereof and enzyme pill comprising the microorganism
KR101711052B1 (en) * 2014-08-25 2017-02-28 (주) 은성기연 Method for cultivating microorganism containing high-concentraion vanadium, microorganism cultivated by using thereof and enzyme pill comprising the microorganism
CN112225570A (en) * 2019-07-14 2021-01-15 江苏摩铸特种陶瓷有限公司 Three-layer silicon carbide graphite crucible and preparation method thereof
CN112225570B (en) * 2019-07-14 2023-02-17 江苏摩铸特种陶瓷有限公司 Three-layer silicon carbide graphite crucible and preparation method thereof

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