JP2003204117A - 湿気に対してパッシベートされた垂直空洞面発光レーザ - Google Patents

湿気に対してパッシベートされた垂直空洞面発光レーザ

Info

Publication number
JP2003204117A
JP2003204117A JP2002356867A JP2002356867A JP2003204117A JP 2003204117 A JP2003204117 A JP 2003204117A JP 2002356867 A JP2002356867 A JP 2002356867A JP 2002356867 A JP2002356867 A JP 2002356867A JP 2003204117 A JP2003204117 A JP 2003204117A
Authority
JP
Japan
Prior art keywords
moisture
mirror
vertical
region
emitting laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002356867A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003204117A5 (enExample
Inventor
Seongsin Kim
ソンシン・キム
Wilson H Widjaja
ウィルソン・エイチ・ウィジャヤ
Suning Xie
サニング・シェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2003204117A publication Critical patent/JP2003204117A/ja
Publication of JP2003204117A5 publication Critical patent/JP2003204117A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2002356867A 2001-12-07 2002-12-09 湿気に対してパッシベートされた垂直空洞面発光レーザ Withdrawn JP2003204117A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/013,108 US6680964B2 (en) 2001-12-07 2001-12-07 Moisture passivated planar index-guided VCSEL
US10/013108 2001-12-07

Publications (2)

Publication Number Publication Date
JP2003204117A true JP2003204117A (ja) 2003-07-18
JP2003204117A5 JP2003204117A5 (enExample) 2006-02-02

Family

ID=21758351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002356867A Withdrawn JP2003204117A (ja) 2001-12-07 2002-12-09 湿気に対してパッシベートされた垂直空洞面発光レーザ

Country Status (4)

Country Link
US (2) US6680964B2 (enExample)
JP (1) JP2003204117A (enExample)
DE (1) DE10242611B4 (enExample)
GB (1) GB2386756B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7580436B2 (en) 2003-09-18 2009-08-25 Seiko Epson Corporation Surface-emitting type semiconductor laser and method for manufacturing the same
KR20230042207A (ko) * 2021-09-18 2023-03-28 베르티라이트 컴퍼니.,리미티드. 수직 공동 표면 발광 레이저

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6813295B2 (en) * 2002-03-25 2004-11-02 Agilent Technologies, Inc. Asymmetric InGaAsN vertical cavity surface emitting lasers
US6862309B2 (en) * 2003-02-06 2005-03-01 Agilent Technologies, Inc. Passivation scheme for oxide vertical cavity surface-emitting laser
US7433381B2 (en) * 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
US7058106B2 (en) * 2003-12-10 2006-06-06 Widjaja Wilson H Screenable moisture-passivated planar index-guided VCSEL
US20060013276A1 (en) * 2004-07-15 2006-01-19 Mchugo Scott A VCSEL having an air gap and protective coating
US7483469B2 (en) * 2004-11-01 2009-01-27 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device
JP4626686B2 (ja) * 2008-08-14 2011-02-09 ソニー株式会社 面発光型半導体レーザ
US10221817B2 (en) * 2016-05-26 2019-03-05 Phillips & Temro Industries Inc. Intake air heating system for a vehicle
CN108269821A (zh) * 2016-12-30 2018-07-10 英属开曼群岛商錼创科技股份有限公司 显示设备
CN112189288A (zh) * 2018-05-11 2021-01-05 加利福尼亚大学董事会 具有埋入式折射率引导型电流限制层的垂直腔面发射器件
CN108598866B (zh) * 2018-05-21 2020-02-14 湖北光安伦科技有限公司 一种vcsel芯片阵列结构及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US5719893A (en) 1996-07-17 1998-02-17 Motorola, Inc. Passivated vertical cavity surface emitting laser
US5978408A (en) 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US5896408A (en) 1997-08-15 1999-04-20 Hewlett-Packard Company Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US6246708B1 (en) * 1997-08-27 2001-06-12 Xerox Corporation Semiconductor laser with associated electronic components integrally formed therewith
EP1130726A3 (en) 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Distributed feedback semiconductor laser device and multi-wavelength laser array
US6373865B1 (en) * 2000-02-01 2002-04-16 John E. Nettleton Pseudo-monolithic laser with an intracavity optical parametric oscillator
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
KR100708107B1 (ko) * 2000-12-19 2007-04-16 삼성전자주식회사 전기 광학적 특성이 개선된 반도체 광 방출 장치 및 그제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7580436B2 (en) 2003-09-18 2009-08-25 Seiko Epson Corporation Surface-emitting type semiconductor laser and method for manufacturing the same
US7983319B2 (en) 2003-09-18 2011-07-19 Seiko Epson Corporation Surface-emitting type semiconductor laser that controls polarization directions of laser light and method for manufacturing the same
KR20230042207A (ko) * 2021-09-18 2023-03-28 베르티라이트 컴퍼니.,리미티드. 수직 공동 표면 발광 레이저
JP2023544661A (ja) * 2021-09-18 2023-10-25 常州縦慧芯光半導体科技有限公司 垂直共振器面発光レーザ
JP7440128B2 (ja) 2021-09-18 2024-02-28 常州縦慧芯光半導体科技有限公司 垂直共振器面発光レーザ
KR102700889B1 (ko) * 2021-09-18 2024-08-29 베르티라이트 컴퍼니.,리미티드. 수직 공동 표면 발광 레이저

Also Published As

Publication number Publication date
GB2386756B (en) 2005-10-12
GB2386756A (en) 2003-09-24
US20040004984A1 (en) 2004-01-08
US6680964B2 (en) 2004-01-20
US6982182B2 (en) 2006-01-03
DE10242611A1 (de) 2003-06-26
US20030108075A1 (en) 2003-06-12
DE10242611B4 (de) 2009-12-03
GB0228400D0 (en) 2003-01-08

Similar Documents

Publication Publication Date Title
US8189642B1 (en) VCSEL semiconductor device
US5896408A (en) Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US6222866B1 (en) Surface emitting semiconductor laser, its producing method and surface emitting semiconductor laser array
US7098059B2 (en) Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector
JP4359345B2 (ja) 不動態化垂直空洞面発光レーザ
KR101148287B1 (ko) 공기 갭 및 보호 코팅을 갖는 ｖｃｓｅｌ
US6542530B1 (en) Electrically pumped long-wavelength VCSEL and methods of fabrication
JP3162333B2 (ja) 表面発光レーザ及びその製造方法
JP3497752B2 (ja) 個々の光学および電流ガイドを持つ垂直空胴表面発光レーザ
EP3916936A1 (en) Vertical-cavity surface-emitting laser
EP1233493B1 (en) Vertical cavity surface-emitting laser diode having a spacer for effective diffusion of holes between p-type electrode and active layer, and method for manufacturing the same
US5747366A (en) Method of fabricating a surface emitting semiconductor laser
JP2009164640A (ja) エッジエミッティングレーザのモノリシックアレイ
JP2003204117A (ja) 湿気に対してパッシベートされた垂直空洞面発光レーザ
CN113574751A (zh) 垂直腔面发射激光器件
US6924161B2 (en) Protective side wall passivation for VCSEL chips
US11522343B2 (en) Surface-emitting laser and method of manufacturing the same
US6696308B1 (en) Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
US6819697B2 (en) Moisture passivated planar index-guided VCSEL
US6737290B2 (en) Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device
US20090041074A1 (en) Passivation of Vertical Cavity Surface Emitting Lasers
US7058106B2 (en) Screenable moisture-passivated planar index-guided VCSEL
US11539188B2 (en) Surface emitting laser and method of manufacturing the same
CN116014562A (zh) 垂直腔面发射激光器的形成方法
US20250079800A1 (en) Vertical-cavity surface-emitting laser with a planar surface oxidized grating

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051209

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20070409

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20070409

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20070507