JP2003188433A5 - - Google Patents

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JP2003188433A5
JP2003188433A5 JP2001384317A JP2001384317A JP2003188433A5 JP 2003188433 A5 JP2003188433 A5 JP 2003188433A5 JP 2001384317 A JP2001384317 A JP 2001384317A JP 2001384317 A JP2001384317 A JP 2001384317A JP 2003188433 A5 JP2003188433 A5 JP 2003188433A5
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layer
forming
control layer
piezoelectric
alignment control
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JP2001384317A
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JP2003188433A (en
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基板と、前記基板上に設けられた第1の配向制御層と、前記第1の配向制御層上に設けられた第1の電極層と、前記第1の電極層上に設けられた第2の配向制御層と、前記第2の配向制御層上に設けられた圧電体層と、前記圧電体層上に設けられた第2の電極層と、を有する圧電素子。A substrate, a first alignment control layer provided on the substrate, a first electrode layer provided on the first alignment control layer, and a second provided on the first electrode layer A piezoelectric element comprising: an orientation control layer; a piezoelectric layer provided on the second orientation control layer; and a second electrode layer provided on the piezoelectric layer. 基板上に第1の配向制御層をプラズマCVD法を用いて形成する工程と、前記第1の配向制御層上に第1の電極層をスパッタ法を用いて形成する工程と、前記第1の電極層上に第2の配向制御層をスパッタ法を用いて形成する工程と、前記第2の配向制御層上に圧電体層をスパッタ法を用いて形成する工程と、前記圧電体層上に第2の電極層をスパッタ法を用いて形成する工程と、を有する圧電素子の製造方法。Forming a first alignment control layer on the substrate using a plasma CVD method; forming a first electrode layer on the first alignment control layer using a sputtering method; and Forming a second alignment control layer on the electrode layer by sputtering, forming a piezoelectric layer on the second alignment control layer by sputtering, and on the piezoelectric layer; Forming a second electrode layer using a sputtering method. 基板上に第1の配向制御層を形成する工程と、前記第1の配向制御層上に第1の電極層を形成する工程と、前記第1の電極層上に第2の配向制御層を形成する工程と、前記第2の配向制御層上に圧電体層を形成する工程と、前記圧電体層上に第2の電極層を形成する工程と、前記第2の電極層上に振動層を形成する工程と、前記振動層上にインクを吐出するための圧力室を接合する工程と、前記基板及び前記第1の配向制御層を除去する工程と、を有するインクジェットヘッドの製造方法。Forming a first alignment control layer on the substrate; forming a first electrode layer on the first alignment control layer; and forming a second alignment control layer on the first electrode layer. Forming, a step of forming a piezoelectric layer on the second orientation control layer, a step of forming a second electrode layer on the piezoelectric layer, and a vibration layer on the second electrode layer A method of manufacturing an ink jet head, comprising: a step of forming a pressure chamber; a step of bonding a pressure chamber for discharging ink onto the vibration layer; and a step of removing the substrate and the first orientation control layer. 基板の一面に振動層を形成する工程と、前記振動層上に第1の配向制御層を形成する工程と、前記第1の配向制御層上に第1の電極層を形成する工程と、前記第1の電極層上に第2の配向制御層を形成する工程と、前記第2の配向制御層上に圧電体層を形成する工程と、前記圧電体層上に第2の電極層を形成する工程と、前記基板をエッチングして圧力室を形成する工程と、を有するインクジェットヘッドの製造方法。Forming a vibration layer on one surface of the substrate; forming a first alignment control layer on the vibration layer; forming a first electrode layer on the first alignment control layer; Forming a second orientation control layer on the first electrode layer; forming a piezoelectric layer on the second orientation control layer; and forming a second electrode layer on the piezoelectric layer. And a step of etching the substrate to form a pressure chamber. 前記第1の電極層、前記第2の配向制御層、前記圧電体層、および前記第2の電極層をスパッタ法を用いて形成し、前記第1の配向制御層をプラズマCVD法を用いて形成する請求項3または4に記載のインクジェットヘッドの製造方法。The first electrode layer, the second alignment control layer, the piezoelectric layer, and the second electrode layer are formed using a sputtering method, and the first alignment control layer is formed using a plasma CVD method. The manufacturing method of the inkjet head of Claim 3 or 4 to form. 一方の面にインクを吐出するための圧力室が形成された圧力室基板と、前記圧力室基板の他方の面上に設けられた振動層と、前記振動層上に設けられた第1の配向制御層と、前記第1の配向制御層上に設けられた第1の電極層と、前記第1の電極層上に設けられた第2の配向制御層と、前記第2の配向制御層上に設けられた圧電体層と、前記圧電体層上に設けられた第2の電極層と、を有するインクジェットヘッド。A pressure chamber substrate in which a pressure chamber for ejecting ink is formed on one surface; a vibration layer provided on the other surface of the pressure chamber substrate; and a first orientation provided on the vibration layer A control layer, a first electrode layer provided on the first alignment control layer, a second alignment control layer provided on the first electrode layer, and the second alignment control layer An inkjet head comprising: a piezoelectric layer provided on the piezoelectric layer; and a second electrode layer provided on the piezoelectric layer. 請求項6に記載のインクジェットヘッドと、前記インクジェットヘッドと記録媒体との相対位置を変化させる移動手段とを有するインクジェット式記録装置。 An ink jet head according to claim 6, the ink jet recording apparatus that have a moving means for changing the relative position between the inkjet head and the recording medium. 前記第1の配向制御層がNaCl型結晶構造の(100)に優先配向した酸化マグネシウム、酸化ニッケル、酸化コバルト、酸化鉄、酸化チタンの群から選ばれた1種以上である請求項1に記載の圧電素子。2. The first orientation control layer is at least one selected from the group consisting of magnesium oxide, nickel oxide, cobalt oxide, iron oxide, and titanium oxide preferentially oriented to (100) having a NaCl-type crystal structure. Piezoelectric element. 前記第1の配向制御層がNaCl型結晶構造の(100)に優先配向した酸化マグネシウム、酸化ニッケル、酸化コバルト、酸化鉄、酸化チタンの群から選ばれた1種以上である請求項6に記載のインクジェットヘッド。The first orientation control layer is at least one selected from the group consisting of magnesium oxide, nickel oxide, cobalt oxide, iron oxide, and titanium oxide preferentially oriented to (100) having a NaCl-type crystal structure. Inkjet head. 前記第2の配向制御層がペロブスカイト型結晶構造の(001)または(100)に優先配向したチタン酸鉛に、マグネシウム、カルシウム、ストロンチウム、バリウム、ランタン、ニオブ、マンガン、亜鉛、アルミニウムの群から選ばれた1種以上を、0を超え25モル%以下添加したものであり、かつ化学量論組成と比較して鉛量が5超え30モル%以下過剰である請求項1に記載の圧電素子。The second orientation control layer is selected from the group consisting of magnesium, calcium, strontium, barium, lanthanum, niobium, manganese, zinc, and aluminum in lead titanate preferentially oriented to (001) or (100) in the perovskite crystal structure 2. The piezoelectric element according to claim 1, wherein one or more of these are added in excess of 0 and 25 mol% or less, and the amount of lead is more than 5 and 30 mol% or less in excess of the stoichiometric composition. 前記第2の配向制御層がペロブスカイト型結晶構造の(001)または(100)に優先配向したチタン酸鉛に、マグネシウム、カルシウム、ストロンチウム、バリウム、ランタン、ニオブ、マンガン、亜鉛、アルミニウムの群から選ばれた1種以上を、0を超え25モル%以下添加したものであり、かつ化学量論組成と比較して鉛量が5を超え30モル%以下過剰である請求項6に記載のインクジェットヘッド。The second orientation control layer is selected from the group consisting of magnesium, calcium, strontium, barium, lanthanum, niobium, manganese, zinc, and aluminum in lead titanate preferentially oriented to (001) or (100) in the perovskite crystal structure 7. The ink jet head according to claim 6, wherein one or more of these are added in excess of 0 and 25 mol% or less, and the amount of lead is more than 5 and 30 mol% or less in excess of the stoichiometric composition. . 前記圧電体層が、(001)または(100)に優先配向したペロブスカイト型結晶構造のチタン酸ジルコン酸鉛である請求項1に記載の圧電素子。2. The piezoelectric element according to claim 1, wherein the piezoelectric layer is lead zirconate titanate having a perovskite crystal structure preferentially oriented to (001) or (100). 前記圧電体層が、(001)または(100)に優先配向したペロブPerovals in which the piezoelectric layer is preferentially oriented to (001) or (100) スカイト型結晶構造のチタン酸ジルコン酸鉛である請求項6に記載のインクジェットヘッド。The ink jet head according to claim 6, wherein the ink is a lead zirconate titanate having a skite type crystal structure.
JP2001384317A 2001-12-18 2001-12-18 Piezo-electric device, ink jet head and method for manufacturing them and ink jet recording device Withdrawn JP2003188433A (en)

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JP2003188433A5 true JP2003188433A5 (en) 2005-07-28

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Publication number Priority date Publication date Assignee Title
JP4908746B2 (en) * 2003-09-01 2012-04-04 富士フイルム株式会社 Multilayer structure, piezoelectric actuator, and manufacturing method thereof
JP2006114562A (en) * 2004-10-12 2006-04-27 Seiko Epson Corp Piezoelectric substance film, piezoelectric element, piezoelectric actuator, piezoelectric pump, inkjet type recording head, inkjet printer, surface acoustic wave device, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic device
JP5310969B2 (en) * 2005-03-31 2013-10-09 セイコーエプソン株式会社 LAMINATED FILM MANUFACTURING METHOD, ACTUATOR DEVICE MANUFACTURING METHOD, ACTUATOR DEVICE, LIQUID EJECTING HEAD, AND LIQUID EJECTING DEVICE
JP5016207B2 (en) * 2005-07-05 2012-09-05 シャープ株式会社 Piezoelectric thin film transformer and manufacturing method thereof
JP5158299B2 (en) * 2005-08-05 2013-03-06 セイコーエプソン株式会社 Piezoelectric element, actuator device, liquid ejecting head, liquid ejecting apparatus, and method of manufacturing piezoelectric element
JP2007173297A (en) * 2005-12-19 2007-07-05 Sharp Corp Piezoelectric transformer and its manufacturing method
JP5592104B2 (en) 2009-02-17 2014-09-17 富士フイルム株式会社 Piezoelectric film, piezoelectric element including the same, and liquid ejection device
JP6128126B2 (en) * 2012-08-08 2017-05-17 コニカミノルタ株式会社 Piezoelectric element, piezoelectric device, inkjet head, and inkjet printer
JP6606866B2 (en) * 2015-05-29 2019-11-20 セイコーエプソン株式会社 Piezoelectric device and probe, electronic apparatus and ultrasonic imaging apparatus
CN107342357B (en) * 2016-04-28 2022-08-16 新科实业有限公司 Thin film piezoelectric element and method for manufacturing the same
TWI717498B (en) * 2016-06-21 2021-02-01 日商前進材料科技股份有限公司 Membrane structure and manufacturing method thereof
CN112250032B (en) * 2019-07-22 2023-12-12 安徽奥飞声学科技有限公司 Manufacturing method of MEMS structure

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