JP2003188359A - 磁気的に軟らかい合成フェリ磁性体基準層を含む磁気抵抗素子 - Google Patents

磁気的に軟らかい合成フェリ磁性体基準層を含む磁気抵抗素子

Info

Publication number
JP2003188359A
JP2003188359A JP2002273449A JP2002273449A JP2003188359A JP 2003188359 A JP2003188359 A JP 2003188359A JP 2002273449 A JP2002273449 A JP 2002273449A JP 2002273449 A JP2002273449 A JP 2002273449A JP 2003188359 A JP2003188359 A JP 2003188359A
Authority
JP
Japan
Prior art keywords
layer
magnetic
magnetization
reference layer
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002273449A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003188359A5 (enExample
Inventor
Lung Tran
ルン・トラン
Manish Sharma
マニシュ・シャーマ
Manoj Bhattacharyya
マノイ・バータッチャーヤ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003188359A publication Critical patent/JP2003188359A/ja
Publication of JP2003188359A5 publication Critical patent/JP2003188359A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2002273449A 2001-09-25 2002-09-19 磁気的に軟らかい合成フェリ磁性体基準層を含む磁気抵抗素子 Pending JP2003188359A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/963,933 US6795281B2 (en) 2001-09-25 2001-09-25 Magneto-resistive device including soft synthetic ferrimagnet reference layer
US09/963933 2001-09-25

Publications (2)

Publication Number Publication Date
JP2003188359A true JP2003188359A (ja) 2003-07-04
JP2003188359A5 JP2003188359A5 (enExample) 2005-11-04

Family

ID=25507916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002273449A Pending JP2003188359A (ja) 2001-09-25 2002-09-19 磁気的に軟らかい合成フェリ磁性体基準層を含む磁気抵抗素子

Country Status (2)

Country Link
US (1) US6795281B2 (enExample)
JP (1) JP2003188359A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129858A (ja) * 2003-10-27 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10158795B4 (de) * 2001-11-30 2005-12-22 Infineon Technologies Ag Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
US6850433B2 (en) * 2002-07-15 2005-02-01 Hewlett-Packard Development Company, Lp. Magnetic memory device and method
JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
KR100522943B1 (ko) * 2003-04-25 2005-10-25 학교법인고려중앙학원 소자 크기 변화에 무관하게 작고 안정한 바이어스 자기장을 갖는 자기 저항 구조
US7167391B2 (en) * 2004-02-11 2007-01-23 Hewlett-Packard Development Company, L.P. Multilayer pinned reference layer for a magnetic storage device
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
KR20080085569A (ko) * 2007-03-20 2008-09-24 삼성전자주식회사 터널링 자기저항 소자 및 그를 포함하는 자기 헤드
JP5526707B2 (ja) * 2009-10-27 2014-06-18 ソニー株式会社 情報記憶素子の駆動方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5949623A (en) * 1997-09-11 1999-09-07 International Business Machines Corporation Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US6633464B2 (en) * 1998-12-09 2003-10-14 Read-Rite Corporation Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system
US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism
US6576969B2 (en) 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6538917B1 (en) 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129858A (ja) * 2003-10-27 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ

Also Published As

Publication number Publication date
US20030057461A1 (en) 2003-03-27
US6795281B2 (en) 2004-09-21

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