JP2003186415A - Manufacturing method for electrooptic device, the electrooptic device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptic device in which wiring in highly fine pattern can be easily formed as wiring, etc., formed in the electrooptic device by using a low-resistance conductive substance and the wiring, etc., can be made thin, and its manufacturing method. <P>SOLUTION: The manufacturing method for the electrooptic device includes a process of forming a 1st metallic oxide layer 314X having a pattern non- formation area and a pattern formation area on a substrate 300, a process of forming a conductive film 312X containing silver and gold on the substrate in the pattern non-formation area and in the pattern formation area, a process of forming a 2nd metallic oxide layer 314Y overlapping the pattern non- formation area and pattern formation area in plane on the conductive film 312X, and a process of forming a resist mask on the 2nd metallic oxide layer 314Y over the pattern non-formation area and pattern formation area in plane to perform etching by using an etching solution which has a faster etching rate to the conductive film 312X than to the 1st and 2nd metallic oxide layers 314X and 314Y. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electro-optical device, an electro-optical device, and electronic equipment. More specifically, a method of manufacturing an electro-optical device and an electro-optical device capable of efficiently forming a high-definition thin film at low cost by using a conductive material having a low resistance for wiring and the like formed in the electro-optical device. The present invention relates to a device and electronic equipment.

[0002]

2. Description of the Related Art An electro-optical device generally has a structure including a substrate that holds an electro-optical material such as a liquid crystal or an organic EL element, and electrodes for applying a voltage to the electro-optical material. Further, as an electro-optical device of this type, wiring for supplying a signal to the electrodes is extended toward an edge portion of the substrate, and a portion reaching the edge portion is used for various parts (mounted parts). ) Is also known to be connected to the terminal portion. This mounted component is, for example, a COG on a substrate.
Flexible printed circuit board (FPC) having an IC chip mounted by using (Chip On Glass) technology and a wiring for connecting a circuit board and an electro-optical device.
Etc.

For such wiring, an APC alloy (alloy mainly containing silver (Ag) and incidentally containing palladium (Pd) and copper (Cu)) is used. Also, AP
Since the C alloy has excellent reflection characteristics, it can also be used as a reflective conductive film for liquid crystal devices and the like.

When this APC alloy or the like is used as a reflective conductive film for a reflective display, the electrode arranged on the counter substrate is indium tin oxide (ITO: Indium).
This is a transparent electrode made of a transparent conductor such as Tin Oxide). When a liquid crystal is sandwiched between different kinds of metals in this way, the voltage applied to the liquid crystal becomes unstable. Is used by covering the surface thereof with the same transparent conductor such as indium tin oxide.

Further, such an alloy containing silver (Ag) lacks adhesion to other materials, so that it is damaged by mechanical friction, and moisture or the like is removed from the interface between the conductive film and the substrate. Corrosion and peeling may occur due to invasion, so it is effective to form a transparent conductor such as indium tin oxide in terms of protecting the surface.

Conventionally, as a method of manufacturing a wiring using an APC alloy or the like, a method of forming a thin film of APC alloy or the like on a substrate by a sputtering method or the like and patterning it by using a photolithography technique and an etching technique has been used. Was there.

In recent years, along with the miniaturization and high integration of electro-optical devices, further reduction in resistance of such wiring is required. An ACA alloy can be given as an example of the conductive material that satisfies these requirements. This ACA alloy is an alloy mainly containing silver (Ag) and incidentally containing gold (Au) and copper (Cu), which has been conventionally used.
Since it has a lower resistance value than that of PC alloy and excellent reflection characteristics, it can be used not only as a wiring but also as a reflective conductive film used in a reflective display of a liquid crystal device. It is a material.

[0008]

However, this A
Since the CA alloy is an alloy containing gold (Au), a normal conductive film could not be formed by the conventional manufacturing method.

FIG. 17 is a sectional view schematically showing a step of forming a conductive film on a glass substrate constituting an electro-optical device by a conventional patterning method. FIG. 17 (a)
As shown in, the substrate 40 cleaned by ultrasonic cleaning or the like.
A conductive film 412X is formed on the entire surface of the substrate 0 by sputtering or the like. Next, as shown in FIG. 17B, a resist mask 4 having a desired pattern is formed on the conductive film 412X.
Form 15. Next, as shown in FIG. 17 (c), an etching solution, for example, a nitric acid-based etching solution (phosphoric acid (30%), nitric acid (8%), acetic acid (30%) by weight, and the balance of water are mixed. Solution). Next, as shown in FIG. 17D, the resist mask 415 is removed and a conductive film 412 having a desired pattern is formed.

At this time, as a material of the conductive film 412, an alloy containing no gold (Au) as a constituent element, for example, AP
If it is a C alloy, the conductive film 412X which is not protected by the resist mask 415 is completely dissolved by the etching solution. However, when an ACA alloy is used, silver (Ag) and copper (which are the constituent elements of the ACA alloy). Cu) is dissolved by the etching solution, but gold (Au) is not dissolved, and some remains on the substrate 400.

In this way, the gold (Au) remaining on the substrate
Has a problem that it interferes with the normal conduction of the wiring of a high-definition pattern and causes a defect such as a short circuit.

In order to prevent gold (Au) from remaining, it is possible to use an etchant having a high solubility such as aqua regia. In this case, all the ACA alloy is removed together with the resist mask. There is a problem that the conductive film cannot be patterned because it is dissolved.

The present invention has been made in view of the above-mentioned problems, and the wiring and the like formed in the electro-optical device can be efficiently and cost-effectively and highly accurately made by using a low-resistance conductive material. It is also an object of the present invention to provide an electro-optical device manufacturing method, an electro-optical device, and an electronic device that can be thinned.

[0014]

In order to achieve the above-mentioned object, a method of manufacturing an electro-optical device according to the present invention comprises a first metal oxide layer having a pattern non-formation region and a pattern formation region on a substrate. A step of forming, a step of forming a conductive film containing silver and gold on the substrate in the pattern non-formation area and the pattern formation area, and a step of forming a conductive film containing silver and gold on the pattern non-formation area and the pattern formation area. Forming the second metal oxide layer so as to overlap in a plane, and forming a resist mask on the second metal oxide layer so as to overlap in a plane with the pattern non-formation region and the pattern formation region. Forming and performing etching using an etchant having a higher etching rate for the conductive film than the first and second metal oxide layers. That.

Further, the method of manufacturing an electro-optical device according to the present invention comprises a step of forming a first metal oxide layer having a pattern non-formation region and a pattern formation region on the substrate, and a step of forming the first metal oxide layer on the substrate in the pattern non-formation region. And a step of forming a conductive film containing aluminum on the pattern formation region,
A step of forming the second metal oxide layer on the conductive film so as to planarly overlap with the pattern non-formation area and the pattern formation area; and planarizing the pattern non-formation area and the pattern formation area. A resist mask is formed on the second metal oxide layer so as to overlap with each other, and etching is performed using an etchant having a higher etching rate for the conductive film than the first and second metal oxide layers. And a process.

With such a structure, the wiring and the like formed in the electro-optical device can be efficiently made low in cost, high-definition and thin by using a low-resistance conductive material. Further, by protecting the conductive film such as wiring with a metal oxide layer, the surface of the conductive film is not exposed, and thus the conductive film of the obtained electro-optical device is damaged by mechanical friction, and It is possible to effectively prevent the occurrence of corrosion, peeling or the like due to intrusion of water or the like from the interface between the conductive film and the substrate. Furthermore, it is possible to prevent impurities generated from the conductive film from eluting into the electro-optical material layer, for example, the liquid crystal layer. In addition, even when the conductive film is used as a reflective conductive film of a liquid crystal device or the like, the electro-optical material layer is protected by the same metal oxide layer as the electrodes which face each other with the electro-optical material interposed therebetween. The voltage applied to can be stable.

The electro-optical device of the present invention includes a substrate,
An electro-optical material layer supported by the substrate, a sealing material provided around the electro-optical material layer of the substrate, and a conductive material provided on the substrate inside the outer periphery of the sealing material and including silver and gold. A film and a metal oxide layer formed inside the outer periphery of the sealing material, the metal oxide layer being laminated on the conductive film and being patterned so that an edge portion is in contact with the substrate, and the metal oxide layer is It is characterized in that it extends through the sealing material to a position outside the outer circumference of the sealing material.

By using a conductive material having a low resistance, the wirings and the like formed in the electro-optical device can be made highly efficient and at low cost, and can be made fine and thin.
Further, by protecting the conductive film such as wiring with a metal oxide layer, the surface of the conductive film is not exposed, so that the conductive film of the electro-optical device is damaged by mechanical friction.
Further, it is possible to effectively prevent the occurrence of corrosion, peeling and the like due to intrusion of moisture and the like from the interface between the conductive film and the substrate. Further, impurities generated from the conductive film are
Elution into the electro-optical material layer, for example, the liquid crystal layer can also be prevented. In addition, even when the conductive film is used as a reflective conductive film of a liquid crystal device or the like, the electro-optical material layer is protected by the same metal oxide layer as the electrodes which face each other with the electro-optical material interposed therebetween. The voltage applied to can be stable.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of an electro-optical device manufacturing method and an electro-optical device according to the present invention will be specifically described with reference to the drawings by taking a liquid crystal device and its manufacturing method as an example. In each of the drawings used to describe the present embodiment, the scale of each layer and each member is different in order to make each layer and each member recognizable in the drawing.

[First Embodiment] FIG. 1 is a schematic perspective view showing the structure of a liquid crystal device according to a first embodiment of the present invention, and FIG. 2 is a view in the X direction of FIG. FIG.
This liquid crystal device functions as a reflective type when the outside is sufficiently bright, while it functions as a transmissive type by turning on a backlight when the outside is dark, that is, a so-called transflective passive matrix liquid crystal. The device 100.

As shown in FIGS. 1 and 2, the liquid crystal device 10
In 0, the front side substrate 200 and the back side substrate 300 are bonded to each other at a constant interval by the sealing material 110 in which the conductive particles (conductive material) 114 also serving as a spacer are mixed, and at this interval, For example, TN (Twis
A liquid crystal 160 of ted Nematic) type is enclosed. Note that the sealing material 110 is formed on either one of the substrates along the inner peripheral edge of the front substrate 200, but a part thereof is opened in order to seal the liquid crystal 160. Therefore, after the liquid crystal 160 is filled, the opening is sealed by the sealing material 112.

On the surface of the front substrate 200 facing the liquid crystal 160, a plurality of common (scanning) electrodes 210 are provided.
It extends in the (row) direction. In addition, the rear substrate 300
A plurality of segment (data) electrodes 310 extend in the Y (column) direction on the surface facing the liquid crystal 160. Therefore, in the present embodiment, the common electrode 21
0s and the segment electrodes 310 are orthogonal to each other, and the intersecting regions form a large number of dots D arranged in a matrix, and the arrangement of these dots D forms the liquid crystal display region A.

The front side substrate 20 of the rear side substrate 300
Driver IC chips 122 for driving the common electrodes 210 and the segment electrodes 310 are mounted on the portions protruding from 0 by the COG technique as described later. Further, a flexible printed circuit board (FP) is provided outside the area where the driver IC chip 122 is mounted.
C) 150 is connected.

Here, the common electrode 210 formed on the front substrate 200 has the wiring (first wiring) 350 formed on the rear substrate 300 via the conductive particles 114 mixed in the sealing material 110. It is connected to one end. At this time, the wiring 35 connected from the upper half common electrode 210
0 is drawn out from the left side, and the wiring 350 connected from the lower half common electrode 210 is drawn out from the right side and connected to the output side bump (projection electrode) of the driver IC chip 122. That is, the driver IC chip 122 is
The common signal is supplied through the path of the wiring 350, the conductive particles 114, and the common electrode 210. The input-side bumps of the driver IC chip 122 and the flexible printed circuit board (FPC) 150 (external circuit board) are connected by wiring (second wiring) 360.

Further, the segment electrode 310 formed on the rear substrate 300 is connected to the wiring 380 outside the sealing material 110, and the wiring 380 is connected to the driver IC chip 1.
22 is connected to the output side bump. It should be noted that the input side bumps of the driver IC chip 122 and the flexible printed circuit board (FPC) 150 (external circuit board) are connected by wiring (second wiring) 370.

In the liquid crystal device 100, the polarizing plate 12 is actually provided on the outer surface side of the front substrate 200 as shown in FIG.
1 and the phase difference plate 123 are provided, while the rear substrate 30
Although a polarizing plate 131, a retardation plate 133, and the like are provided on the back surface side of 0, they are not shown in FIG. Also,
On the back side of the back side substrate 300, a backlight for use as a transmissive type when external light is small is provided.
This is omitted in FIGS. 1 and 2.

<Liquid Crystal Display Area> Next, the liquid crystal display area A (see FIG. 1) in the liquid crystal device 100 will be described.
As shown in FIG. 2, the retardation plate 123 and the polarizing plate 121 are attached to the outer surface of the front substrate 200. On the other hand, a black light shielding film 202 is formed on the inner surface of the substrate 200,
Prevents color mixing between dots and allows liquid crystal display area A
It functions as a frame that defines (see Fig. 1). Further, the colored layer 204 is provided in a predetermined array in the region corresponding to the dot. In the present embodiment,
The colored layers 204 of three colors of R (red), G (green), and B (blue) are arranged in stripes, and the dots of these three colors form one pixel, but the present invention is not limited to this. However, the color of the colored layer 204, the shape of the pixel, and the like can be changed as appropriate.

A surface protective layer 205 made of a transparent resin such as acrylic resin or epoxy resin is formed on the black light shielding film 202 and the colored layer 204. This surface protection layer 2
On 05, a common electrode 210 in which a transparent conductor, which is a metal oxide layer containing an indium tin oxide or tin oxide film, is patterned in a band shape is formed. Then, an alignment film 208 made of polyimide or the like is formed on the surface of the common electrode 210, and the surface of the alignment film 208 is subjected to rubbing treatment in a predetermined direction. In addition, the black light shielding film 2
02, the coloring layer 204, and the surface protection layer 205 are unnecessary outside the liquid crystal display area A (see FIG. 1), and thus the sealing material 1
It is not provided near the area of 10.

The retardation plate 1 is provided on the outer surface of the rear substrate 300.
33 and the polarizing plate 131 are attached. In addition, a strip-shaped segment electrode 310 in which a reflective conductive film 312 and a transparent electrode 314 that is a metal oxide layer are laminated is formed on the inner surface side of the rear substrate 300. Reflective conductive film 3
Reference numeral 12 is made of an alloy containing silver (Ag) and gold (Au), for example, an ACA alloy or the like, and is used when the light incident from the front substrate 200 side is reflected to perform a reflective display. At this time, the reflective conductive film 312 does not need to be a perfect mirror surface, but rather has a structure that diffuses appropriately. For this purpose, it is preferable to form the reflective conductive film 312 on a surface having undulations to some extent. In addition, the reflective conductive film 312 is provided with two openings 309 for each dot for transmitting illumination light from the backlight so that a transmissive display can be realized.
The transparent electrode 314 is formed of a transparent conductor which is a metal oxide layer containing an indium tin oxide or tin oxide film.

At this time, the transparent electrode 314 is slightly wider than the reflective conductive film 312, and specifically, the reflective conductive film 3 is formed.
The edge (peripheral) portion protruding from 12 is the substrate 300.
Is patterned so as to contact with. Therefore, since the surface of the reflective conductive film 312 is completely covered with the transparent electrode 314, the exposed portion of the reflective conductive film 312 including the opening 309 does not exist in this embodiment.

A surface protective layer 307 made of a transparent resin such as an acrylic resin or an epoxy resin is formed on the transparent electrode 314, and an alignment film 308 made of polyimide or the like is formed on the surface of the surface protective layer 307. There is. Note that the surface of the alignment film 308 is subjected to rubbing treatment in a predetermined direction. For the sake of convenience, the description of the method for manufacturing the rear substrate 300 will be given after the description of the wirings 350, 360, and 370.

<Vicinity of Sealing Material> Next, in the liquid crystal device 100, in the vicinity of the region where the sealing material 110 is formed,
In addition to FIG. 2, description will be made with reference to FIGS. 3 and 4. Here, FIG. 3 is a plan view showing the configuration in the vicinity of the sealing material 110,
FIG. 4 is a cross-sectional view in the Y direction of FIG.

As shown in FIGS. 2 and 3, the front substrate 2
While the common electrode 210 in 00 extends to the region where the seal material 110 is formed, in the rear substrate 300, the wiring 350 passes through the seal material 110 so as to face the common electrode 210 and seals. It extends to the outer peripheral position of the material 110. Therefore, when the spherical conductive particles 114 also serving as spacers are dispersed in the sealing material 110 at an appropriate ratio, the sealing material 110 has conductivity and the common electrode 210 and the wiring 350 are electrically connected. Will be done.

The wiring 350 is connected to the segment electrode 310.
It is formed by patterning the same metal oxide layer at the time of forming the transparent electrode 314 forming the common electrode 210 and the driver IC chip 1 as described above.
The output bumps 22 (see FIG. 1) are electrically connected.

The diameter of the conductive particles 114 in FIG. 2 is considerably larger than the actual diameter for convenience of explanation.
Therefore, it seems that only one seal member 110 is provided in the width direction, but more accurately, as shown in FIG.
A large number of conductive particles 114 are randomly arranged in the width direction of the sealing material 110.

Further, as shown in FIG. 4, the rear substrate 30
The segment electrode 310 at 0 extends to the inside of the region where the seal material 110 is formed, while the seal electrode 1
Wiring 380 is provided outside the region where 10 is formed.
Are formed. The wiring 380 is formed by patterning the same metal oxide layer when forming the transparent electrode 314 forming the segment electrode 310. The sealing material 110 is the sealing material 1 shown in FIG.
It has the same configuration as 10.

<In the vicinity of the driver IC chip mounting region and the flexible printed circuit board connecting region> Subsequently, the rear substrate 3
00, the vicinity of the region where the driver IC chip 122 is mounted and the region where the flexible printed circuit (FPC) 150 is connected will be described. FIG. 5 is a cross-sectional view showing the configuration in these regions, centering on the wiring.

The wiring 350 is, as described above, the transparent electrode 314 which constitutes the segment electrode 310 (see FIG. 2).
It is formed by patterning the same metal oxide layer as that shown in FIG. 2 and supplies a common signal from the driver IC chip 122 to the common electrode 210 (see FIG. 2). Further, the wiring 360 for supplying various signals supplied from the flexible printed circuit (FPC) 150 to the driver IC chip 122 is similarly the segment electrode 31.
0 (see FIG. 2) forming a transparent electrode 314 (see FIG. 2)
It is formed using a conductive material formed by patterning the same metal oxide layer as the above.

For such wirings 350 and 360,
The driver IC chip 122 is COG-mounted, for example, as follows. First, on one surface of the rectangular parallelepiped driver IC chip 122, a plurality of electrodes are provided on the inner peripheral edge portion, and each of these electrodes has bumps 129a and 129b made of, for example, gold (Au) or the like.
Are formed in advance. Then, a sheet-shaped anisotropic conductive film in which conductive particles 134 are uniformly dispersed in an adhesive agent 130 such as epoxy is placed on a region of the rear substrate 300 where the driver IC chip 122 is to be mounted. Then, the anisotropic conductive film is sandwiched between the driver IC chip 122 with the electrode formation surface facing down and the rear substrate 300,
Next, after the driver IC chip 122 is positioned, pressure is applied to the rear substrate 300 via the anisotropic conductive film,
Be heated.

When the flexible printed circuit board (FPC) 150 is connected to the wiring 360, the anisotropic conductive film is similarly used. Thereby, in the flexible printed circuit (FPC) 150, the wiring 154 formed on the base material 152 such as polyimide is electrically connected to the wiring 360 through the conductive particles 144 in the adhesive 140. Will be connected.

Here, the driver IC chip 12 is used.
2 and the wirings 350 and 360 related to the flexible printed circuit (FPC) 150 have been described as an example, the wiring 380 for supplying the segment signal by the driver IC chip 122 to the segment electrode 310 (see FIG. 4),
Also, the wiring 370 for supplying each signal supplied from the flexible printed circuit (FPC) 150 to the driver IC chip 122 has the same configuration as the wiring 350, 360 as shown in parentheses in FIG. ing. That is, in the wirings 370 and 380, as described above, the segment electrode 310 having a configuration in which the reflective conductive film 312 (see FIG. 4) and the transparent electrode 314 (see FIG. 4) are laminated is the sealing material 110 (see FIG. 4). The reflective conductive film 312 (see FIG. 4) is not provided outside the region in which the transparent electrode 314 (see FIG. 4) is formed, and only the transparent electrode 314 (see FIG. 4) is extended. Then, such wirings 370 and 380
On the other hand, the driver IC chip 122 is connected via the anisotropic conductive film.

Next, a practical wiring layout near the area where the driver IC chip 122 is mounted will be described. FIG. 6 is a plan view showing an example of this wiring layout. As shown in this figure, the wiring 380 extending from the segment electrode 310 has its pitch enlarged from the output side of the driver IC chip 122 and is routed to the liquid crystal display area A (see FIG. 1). From the wiring 350 to the common electrode 210, the pitch is once narrowed, extended in the Y direction, then bent 90 degrees and the pitch is expanded, and the wiring is led to the liquid crystal display area A (see FIG. 1). Has been done. Here, the common electrode 210 is divided into two, so that the wiring 350 is drawn out from both sides of the liquid crystal display area A (see FIG. 1) of the substrate 300.

Here, the wiring 350 (common electrode 210)
However, the reason why the pitch is narrowed in the region extending from the output side of the driver IC chip 122 in the Y direction is that this region is a dead space that does not contribute to display. This is because the number of substrates 300 to be taken from one piece of large glass (mother glass) is reduced, resulting in high cost. Also, the driver I
Since a certain pitch is required to connect the output bumps of the C chip 122 to the wiring 350 by the COG technique, the pitch of the connection region of the driver IC chip 122 is conversely enlarged.

In the liquid crystal device shown in FIG. 1, if the number of common electrodes 210 is small, the common electrodes 2
The configuration may be such that 10 is drawn out from only one side.

<Manufacturing Method> Here, the manufacturing method of the above-described liquid crystal device, in particular, the manufacturing method of the back side substrate will be described with reference to FIG.
It will be specifically described with reference to. Note that the liquid crystal display area A (see FIG. 1) where the common electrode 210 (see FIG. 1) and the segment electrode 310 (see FIG. 1) intersect will be mainly described here.

As shown in FIG. 7A, a transparent electrode 314X which is a metal oxide layer containing an indium tin oxide or tin oxide film is formed on the entire inner surface of the substrate 300 by a sputtering method or the like. At this time, the transparent electrode 314X
Is preferably formed to have a thickness of 0.3 to 0.5 μm.

Next, as shown in FIG. 7B, the reflective conductive film 31 forming the segment electrode 310 (see FIG. 3).
The region where 2 (see FIG. 3) is formed is patterned by using the photolithography technique and the etching technique. For example, the opening 309 is formed in the reflective conductive film 312 (see FIG. 3).
When forming (see FIG. 3), patterning is performed so as to leave the region.

Next, as shown in FIG. 7C, the substrate 30
The conductive film 312X containing silver (Ag) and gold (Au) is formed by a sputtering method or the like so as to planarly overlap with the transparent electrode 314X and the transparent electrode 314X. At this time, the conductive film 31
2X is preferably formed to be sufficiently thinner than the transparent electrode 314X, for example, 0.1 to 0.15μ.
It is preferably formed to have a thickness of m. The material of the conductive film 312X may be, for example, an ACA alloy.

Next, as shown in FIG. 7D, the conductive film 3
A transparent electrode 314Y, which is a metal oxide layer containing an indium tin oxide or tin oxide film, is formed on 12X by a sputtering method or the like. At this time, the transparent electrode 314
Y is preferably formed to have a thickness of 0.1 to 0.2 μm. Here, a conductive film 312X and a transparent electrode 314Y are laminated in a region on the substrate 300 where the segment electrode 310 (see FIG. 3) is formed, and a transparent electrode 314X is formed in the other region. , Conductive film 312
This means that X and the transparent electrode 314Y are laminated.

Next, as shown in FIG. 7E, the segment electrodes 310 (see FIG. 3) are covered so as to be slightly wider than the region where they are formed, and the wirings 350, 360, and
A resist mask 390 is formed so as to cover regions where 370 and 380 (see FIG. 1) are formed.

Next, as shown in FIG. 7F, the substrate 30
By etching 0, the wirings 350, 360, 3 composed of the segment electrode 310 composed of the conductive film 312 and the transparent electrode 314 and the transparent electrode 314 are composed.
70, 380 (see FIG. 1). At this time, since the segment electrode 310 is formed so that the peripheral portion of the transparent electrode 314 is in contact with the substrate 300, the conductive film 3 is formed.
Since the surface of 12 is not exposed, the conductive film 312 may be damaged by mechanical friction, and corrosion, peeling, or the like may occur due to moisture or the like entering from the interface between the conductive film 312 and the substrate 300. It can be effectively prevented. Further, since the transparent electrode 314 is interposed between the liquid crystal 160 (see FIG. 2) and the reflective conductive film 312, impurities are prevented from eluting from the reflective conductive film 312 into the liquid crystal 160 (see FIG. 2). can do.

The etching liquid used for this etching preferably contains a hydrochloric acid-based etching liquid or a ferric chloride-based etching liquid. The etching liquid having such a configuration can realize accurate patterning.

Further, the conductive film 3 for this etching solution
It is preferable that the etching rate of 12X is sufficiently lower than the etching rates of the transparent electrodes 314X and 314Y.

Conventionally, the conductive film 312X containing a gold (Au) element, which is not dissolved by an ordinary etching solution, is formed on the substrate 3
For the reason that gold (Au) element remains on 00,
It was not possible to directly form a film on the substrate 300. However, with such a configuration, the gold (Au) element that remains after etching remains on the transparent electrode 314X, but the transparent electrode 314X is also etched, so that the gold (Au) element remains on the substrate 300. Since the element (Au) does not remain, it is possible to prevent the occurrence of electrical defects such as a short circuit.

Although not shown in the subsequent manufacturing method, the surface protective layer 307 as shown in FIG.
The orientation films 308 are sequentially stacked, and the orientation film 308 is subjected to a rubbing treatment to form the back-side substrate 300.
The liquid crystal 160 is attached to the front substrate 200 by the sealing material 110 in which the liquid crystal is dispersed appropriately, and then the liquid crystal 160 is dropped in the opening portion of the sealing material 110 in a state close to vacuum. Then, by returning the pressure to the normal pressure, the liquid crystal 160 is filled between the substrates 200 and 300, and thereafter, the opening is sealed with the sealing material 112 as shown in FIG. After this, the driver I
C chip 122 and flexible printed circuit board (FPC) 15
By mounting 0, the liquid crystal device 100 can be obtained.

Further, the common electrode 210 provided on the front substrate 200 is drawn out to the rear substrate 300 via the conductive particles 114 (see FIG. 2) and the wiring 350, and further, the wiring 360 allows the driver IC chip 122 to be connected. Since it is routed to the vicinity of the mounting region, in the present embodiment, the connection with the flexible printed circuit board (FPC) 150 is completed at one place on one side even though the passive matrix method is used. Therefore, the mounting process can be simplified. (See Figure 1)

On the other hand, the segment electrode 310 is made of silver (A
g) and a reflective conductive film 3 made of an alloy containing gold (Au)
Since 12 and the transparent electrode 314 are laminated, the resistance is reduced. Furthermore, according to the above-described manufacturing method, since the reflective conductive film 312 can be directly formed on the substrate 300, the segment electrode 310 can be thinned. (See Figure 3)

Here, the wiring 35 on the rear substrate 300
0, 360, 370, 380 (see FIG. 1) are formed only from the metal oxide layer, but this is stressed because the alloy containing silver (Ag) and gold (Au) lacks adhesion. This is because it is not preferable to provide it in a portion. That is, if priority is given to lowering the resistance of the wiring, it is preferable to form a reflective conductive film such as an ACA alloy over the entire lower layer of the transparent electrode.
For example, when a driver IC chip is replaced, a reflective conductive film having low adhesion may be peeled off from the substrate due to occurrence of a product defect in the process of mounting the driver IC chip. Therefore, in the present embodiment, silver (Ag) is added to the area other than the liquid crystal display area A (see FIG. 1).
By providing only the transparent electrode without providing an alloy containing gold and gold (Au), peeling of the alloy containing silver (Ag) and gold (Au) is prevented.

In the present embodiment, an alloy containing silver (Ag) and gold (Au) is used as the low resistance conductive film, but a low resistance conductive film containing aluminum is used. May be used.

[Second Embodiment] In the above-described first embodiment, as shown in FIG.
10 and the segment electrode 310 as one driver IC
Although it is configured to be driven only by the chip 122, the present invention is
The present invention is not limited to this, and for example, as shown in FIG. 8, it is also applicable to a type in which the common electrode 210 and the segment electrode 310 are driven by different driver IC chips 124 and 126, respectively.

The liquid crystal device 100 shown in FIG. 8 is common to the first embodiment in that a plurality of common electrodes 210 are extended on the front substrate 200 in the X direction, but the liquid crystal device 100 of the rear substrate 300 is different. A driver IC chip 124 for driving the common electrode 210 and a driver IC chip 126 for driving the segment electrode 310 are mounted on the two sides protruding from the front substrate 200 by COG technology. Further, a flexible printed circuit board (FPC) 150 is connected to the outside of the area where the driver IC chip 126 is mounted on the two sides. Thus, the wiring 350 and the wiring 360 are connected to the common electrode 210.
, The driver IC chip 124 and the flexible printed circuit (FPC) 150 are electrically connected to each other, and the wiring 380 and the wiring 370 form the segment electrode 310 and the driver IC.
Chip 126 and flexible printed circuit board (FPC) 150
And are electrically connected to each other.

Further, as shown in FIG. 9, it is also applicable to a type in which the driver IC chip is not mounted on the substrate 300. That is, in the liquid crystal device 100 shown in this figure, the driver IC chip 127 is mounted on the flexible printed circuit board (FPC) 150 by a technique such as flip chip. In addition, TBA (Tape Automated Bo)
driver IC chip 127 using
Liquid crystal device 100 while the inner leads are connected to each other.
May be connected with the outer lead.
However, in such a configuration, the number of connection points with the flexible printed circuit board (FPC) 150 increases as the number of pixels increases.

In this embodiment, an alloy containing silver (Ag) and gold (Au) is used as the low-resistance conductive film, but a low-resistance conductive film containing aluminum is used. May be used.

[Third Embodiment] In the first and second embodiments described above, the passive matrix type liquid crystal device has been described. However, in the present invention, an active (switching) element is used to change the liquid crystal. It is also applicable to a driven active matrix type liquid crystal device. The liquid crystal device according to the present embodiment uses TF as an active element.
It is an active matrix type liquid crystal device using a D (thin film diode) element.

FIG. 10 is an explanatory diagram showing the structure of a liquid crystal device according to a third embodiment of the present invention, and FIG. 10A is a plan view showing a layout of one pixel of the liquid crystal device,
(B) is a sectional view taken along the line AA 'of (a).
In this embodiment, the scanning line 2 is provided on the front substrate.
While 100 is extended in the X (row) direction, on the rear substrate, the data line (signal line) 3100 is extended in the Y (column) direction, and the scanning line 2100 and the data line 31 are provided.
Corresponding to each intersection with 00, rectangular pixel electrodes 330 are arranged in a matrix. Among them, the pixel electrodes 330 arranged in the same column are the data lines 3100.
Are commonly connected to each other via the TFD element 320. The scanning lines 2100 are each driven by a driver IC chip.

The TFD element 320 is the first TFD element 3
20a and the second TFD element 320b, formed on the rear substrate 300, a first metal film 3116 such as tantalum tungsten, and an insulating film 3118 formed by anodizing the surface of the first metal film 3116. , A second metal film 312 formed on this surface and separated from each other
2, 3124. Of these, the second metal film 312
Reference numerals 2 and 3124 are reflective conductive films such as alloys containing silver (Ag) and gold (Au), and the former second metal film 3122.
Becomes a part of the data line 3100 as it is, while the latter second metal film 3124 becomes the reflective conductive film 3320 of the pixel electrode 330 having the opening 309.

Here, of the TFD elements 320, the first TFD element 320a becomes the second metal film 3122 / insulating film 3118 / first metal film 3116 in order when viewed from the data line 3100 side. Since it has a MIM structure of / insulator / metal, its current-voltage characteristics are non-linear in both positive and negative directions.

On the other hand, in the second TFD element 320b, when viewed from the data line 3100 side, the first metal film 3116 is arranged in order.
/ Insulating film 3118 / second metal film 3124
Therefore, the TFD element 320a has the opposite current-voltage characteristic. Therefore, the TFD element 320 has a configuration in which two diode elements are connected in series in opposite directions to each other, so that the non-linear characteristic of current-voltage is symmetrical in both positive and negative directions as compared with the case of using one element. Becomes

The conductive film 31 which is a part of the data line 3100
20, the second metal films 3122 and 3124, and the pixel electrode 3
The reflective conductive film 3320 of 30 is obtained by patterning the same alloy layer containing silver (Ag) and gold (Au). In the present embodiment, indium tin oxide is used so as not to expose them. Alternatively, it is covered with transparent electrodes 3140 and 3340 which are metal oxide layers including a tin oxide film. At this time, the transparent electrodes 3140 and 3340
Is the conductive film 3120 and the second metal films 3122 and 3124.
And one wider than the reflective conductive film 3320, specifically, the conductive film 3120 and the second metal films 3122 and 312.
4 and the edge (periphery) portion protruding from the reflective conductive film 3320 are patterned so as to contact the substrate 300. Therefore, since the surfaces of the conductive film 3120, the second metal films 3122 and 3124, and the reflective conductive film 3320 are completely covered with the transparent electrodes 3140 and 3340, these exposed portions have a reflective property. Conductive film 332
Including the zero opening 309, it does not exist in the present embodiment. In addition, the data line 3100 corresponds to the first metal film 3
In order from 112, the insulating film 3114, the conductive film 3120,
A transparent electrode 3140 is formed and laminated.

The pixel electrodes 330 on the same row face the scanning lines 2100 on the same row, respectively. This scanning line 2100 is a stripe-shaped transparent electrode which is a metal oxide layer containing an indium tin oxide or tin oxide film, like the common electrode 210 (see FIGS. 1 and 8) in the first and second embodiments. Is. Therefore, the scan line 210
0 functions as an opposite electrode of the pixel electrode 330. Therefore, the liquid crystal capacitance of a dot corresponding to a predetermined color is constituted by the scanning line 2100, the pixel electrode 330, and the liquid crystal sandwiched between the scanning line 2100 and the data electrode 3100 at the intersection. It will be.

With this configuration, regardless of the data voltage applied to the data line 3100,
The selection voltage for operating the TFD element 320 is set to the scanning line 2100.
Application to the TFD element 320 corresponding to the intersection of the scanning line 2100 and the data line 3100, the charge corresponding to the difference between the selection voltage and the data voltage is accumulated in the liquid crystal capacitance connected to the activated TFD element 320. To be done. After the charge accumulation, even if the non-selection voltage is applied to the scanning line 2100 to stop the TFD element 320, the charge accumulation in the liquid crystal capacitance is maintained.

Here, since the alignment state of the liquid crystal changes depending on the amount of charge accumulated in the liquid crystal capacitance, the amount of light passing through the polarizing plate (not shown), whether it is a transmission type or a reflection type, It changes according to the amount of accumulated charge. Therefore, by controlling the amount of charge accumulated in the liquid crystal capacitance for each dot by the data voltage when the selection voltage is applied,
Predetermined gradation display is possible.

<Manufacturing Method> Next, a manufacturing method of the liquid crystal device according to the third embodiment, in particular, TF on the rear substrate.
A method of manufacturing the D element will be described. 11, 12 and 13 are a sectional view and a plan view showing this manufacturing method.

First, as shown in FIG. 11A, the substrate 3
A first metal film 3112X is formed on top of 00. here,
The thickness of the first metal film 3112X is set as the TFD element 32.
An appropriate value is selected depending on the use of 0 (see FIG. 10),
Usually, it is about 100 to 500 nm. The composition of the first metal film 3112X may be, for example, a simple substance of tantalum or a tantalum alloy such as tantalum tungsten (TaW).

Here, when tantalum alone is used as the first metal film 3112X, it can be formed by a sputtering method, an electron beam evaporation method or the like. In addition, the first metal film 31
When tantalum alloy is used as 12X, in addition to tungsten, tantalum as a main component is added with elements belonging to Groups 6 to 8 in the periodic table such as chromium, molybdenum, rhenium, yttrium, lanthanum, and dysprolium. It As the additive element, tungsten is preferable as described above, and the content ratio thereof is, for example, 0.1.
~ 6 wt% is preferred. Further, when the first metal film 3112X is formed using a tantalum alloy, a sputtering method using a mixed target, an electron beam evaporation method, or the like can be used.

Next, as shown in FIG. 11B, the first metal film 3112X (see FIG. 11A) is patterned by using the photolithography technique and the etching technique, and the data line 3100 (see FIG. 10). ), Which is the lowermost layer, and a first metal film 3116 branched from the first metal film 3112 are formed.

Then, as shown in FIG. 11C, the first
The surface of the metal film 3116 is oxidized by the anodic oxidation method,
An insulating film 3118 is formed. At this time, the data line 310
The surface of the first metal film 3112 which is the lowermost layer of 0 (see FIG. 10) is also oxidized at the same time, and the insulating oxide film 3114 is formed in the same manner. An appropriate value is selected for the film thickness of the insulating film 3118 depending on its application, and in the present embodiment, it is, for example, about 10 to 35 nm.

In this embodiment, the TFD element is
The first TFD element 320a (see FIG. 10) and the second TF
Since it consists of two elements, D element 320b (see FIG. 10),
Compared with the case where one TFD element is used for one dot, the film thickness of the insulating film 3118 is almost half. The chemical conversion liquid used for the anodic oxidation is not particularly limited, but for example, a 0.01 to 0.1 wt% citric acid aqueous solution can be used.

Next, as shown in FIG. 11D, the base portion (insulating film 3114) of the data line 3100 (see FIG. 10).
The part of the insulating film 3118 branched from the first metal film 3112 covered with the broken line portion 3119 is removed together with the underlying first metal film 3116.
As a result, the first TFD element 320a (see FIG. 10)
And the first metal film 3116 shared by the second TFD element 320b (see FIG. 10) is the data line 3100 (see FIG. 10).
(See) and be electrically separated. For removing the broken line portion 3119, generally used photolithography technology and etching technology are used.

Next, as shown in FIG. 12E, the transparent electrode 3140X, which is a metal oxide layer containing an indium tin oxide or tin oxide film, is formed by a sputtering method or the like.
A film is formed on the entire surface of the substrate 300. At this time, the transparent electrode 31
40X is preferably formed to have a thickness of 0.3 to 0.5 μm.

Next, as shown in FIG. 12F, the transparent electrode 3140X is formed on the conductive film 31 in the above-mentioned data line.
20 (see FIG. 10), the second metal films 3122 and 3124 (see FIG. 10) in the TFD element, and the reflective conductive film 3320 (see FIG. 10) in the pixel electrode are left in regions other than the photo regions. Patterning is performed using the lithography technique and the etching technique. When the reflective conductive film 3320 (see FIG. 10) is also used as a transflective type reflective film, the opening 309 of the reflective conductive film is used.
Patterning is performed so as to leave a region corresponding to (see FIG. 10).

Next, as shown in FIG.
A conductive film 3120X containing silver (Ag) and gold (Au) is formed on the entire surface of the film 00 by a sputtering method or the like. At this time, the conductive film 3120X is preferably formed to be sufficiently thinner than the transparent electrode 3140X, and for example, the conductive film 3120X is preferably formed to have a thickness of 0.1 to 0.15 μm. The material of the conductive film 3120X can be, for example, an ACA alloy.

Next, as shown in FIG. 13H, a transparent electrode 3140Y, which is a metal oxide layer containing an indium tin oxide or tin oxide film, is formed on the conductive film 3120X by a sputtering method or the like. At this time, the transparent electrode 3140Y is preferably formed to have a thickness of 0.1 to 0.2 μm.

Next, as shown in FIG. 13I, the conductive film 3120 (see FIG. 10) in the above-mentioned data line,
The second metal films 3122 and 3124 (see FIG. 10) in the TFD element and the reflective conductive film 3320 in the pixel electrode.
(Refer to FIG. 10) and covers so as to be slightly wider than the area where each of them is formed, and a sealing material (not shown).
A resist mask 3160 is formed so as to cover a region in which each wiring for connecting to the driver IC chip and the flexible printed circuit (FPC) is formed in a region outside (outside of the liquid crystal display region) of.

Next, as shown in FIG. 13J, the substrate 30
By etching 0, the conductive film 3120 in the data line and the second metal film 3 in the TFD element 320
122, 3124, the reflective conductive film 33 in the pixel electrode
20 and each wiring are formed. At this time, the transparent electrode 314
Since the peripheral portion of 0 is formed so as to contact the substrate 300, the surfaces of the conductive film 3120 in the data line, the second metal films 3122 and 3124 in the TFD element 320, and the reflective conductive film 3320 in the pixel electrode 330 are exposed. Since this is not done, it is possible to prevent corrosion and peeling of these conductive films. Further, since the transparent electrode 3140 is interposed between the liquid crystal and these conductive films, it is possible to prevent impurities from eluting into the liquid crystal.

The etching liquid used at this time preferably contains a hydrochloric acid-based etching liquid or a ferric chloride-based etching liquid. The etching liquid having such a configuration can realize accurate patterning.

Further, the conductive film 3 for this etching solution
It is preferable that the etching rate of 120X is sufficiently lower than the etching rates of the transparent electrode 3140X and the transparent electrode 3140Y.

Conventionally, the conductive film 3120X containing the gold (Au) element which is not dissolved by a normal etching solution is directly formed on the substrate 300 because the gold (Au) element remains on the substrate 300. I couldn't. However, with such a structure, the gold (Au) element remaining after etching is eliminated by the transparent electrode 3140.
Although it remains on X, the transparent electrode 3140X is also etched so that the gold (Au) element does not remain on the substrate 300, thereby preventing the occurrence of electrical defects such as a short circuit. You can

The manufacturing method thereafter is the same as the manufacturing method described in the first embodiment.

As described above, in the present embodiment, T
Second metal films 3122 and 3124 in FD element 320
And the conductive film 3 in the data line 3100 (see FIG. 10).
Since 120 is formed of the same layer as the reflective conductive film 3320, it can be easily formed without complicating the manufacturing process. Further, since the data line 3100 (see FIG. 10) is made of an alloy containing silver (Ag) and gold (Au), which are low-resistance conductive materials, its wiring resistance can be reduced.

Further, according to the present embodiment, each of second metal films 3122 and 3124, conductive film 3120, and reflective conductive film 3320 is an alloy containing silver (Ag) and gold (Au). Is a transparent electrode 3140, 33 which is a metal oxide layer containing an indium tin oxide or tin oxide film.
Since it is covered with 40 etc. without being exposed, corrosion,
As a result of preventing peeling and the like, reliability can be improved.

The TFD element 3 according to the present embodiment is used.
20 is configured such that the first TFD element 320a (see FIG. 10) and the second TFD 320b (see FIG. 10) are opposite to each other so that the current-voltage characteristics are symmetrical in both positive and negative directions. However, if the symmetry of the current-voltage characteristic is not so strongly required, it goes without saying that only one TFD element may be used. In the first place, the TFD element 320 in the present embodiment is an example of a two-terminal switching element. Therefore, as an active element, a ZnO (zinc oxide) varistor or M
In addition to a single element using SI (MetalSemi-Insulator) or the like, it is also possible to use a two-terminal switching element in which these elements are arranged in series or parallel in two opposite directions. Furthermore, in addition to these two-terminal elements, TFT (Thin Film Tram)
(nistor) element may be provided and driven by these elements, and the same conductive film as the reflective conductive film may be used for at least part of the wiring to these elements.

Further, in the present embodiment, an alloy containing silver (Ag) and gold (Au) is used as the low resistance conductive material, but a conductive film containing aluminum is used as the low resistance conductive material. May be used.

<Applications / Modifications> In each of the above-described embodiments, the transflective liquid crystal device has been described, but a simple reflective liquid crystal device may be used without providing an opening. In the case of the reflection type, a front light for irradiating light from the display unit side may be provided as needed instead of the backlight.

Further, even in the case of the semi-transmissive reflection type, it is not always necessary to provide the opening 309 in the reflective conductive film 312. That is, it is sufficient that a part of the incident light from the rear substrate 300 side can realize an image display through the liquid crystal 160 by some configuration. For example,
By forming the reflective conductive film 312 of ACA alloy or the like to have a very small thickness, the opening 309 is not provided.
It will function as a semi-transmissive reflective conductive film. (Fig. 2
reference)

Further, in each of the above-mentioned embodiments,
The conductive material between the common electrode 210 and the wiring 350 is connected to the sealing material 1
Although the configuration is made by the conductive particles 114 mixed in the material 10, the configuration may be made such that conduction is achieved in a region separately provided outside the frame of the sealing material 110. Further, the common electrode 210 (scanning line 2100) and the segment electrode 31
0 (data line 3100) has a relative relationship with each other, so that the segment electrode 310 (data line 3100) is formed on the front substrate 200 and the rear substrate 300 is formed.
Alternatively, the common electrode 210 (scanning line 2100) may be formed. In addition, in each of the embodiments, a liquid crystal device that performs color display has been described, but a liquid crystal device that simply performs monochrome display may be used. (See FIGS. 2 and 10)

Further, in each of the above-mentioned embodiments,
Although TN type was used as the liquid crystal, BTN (Bi-stab)
le Twisted Nematic) type, for example,
A bistable type having a memory property such as a ferroelectric type, a polymer dispersed type, and a dye (guest) having anisotropy in absorption of visible light in the major axis direction and the minor axis direction of the molecule, which has a certain molecule. A GH (guest host) type liquid crystal in which dye molecules are arranged in parallel with liquid crystal molecules by dissolving in aligned liquid crystal (host) may be used.

Further, there is a vertical alignment (homeotropic alignment) in which liquid crystal molecules are aligned vertically with respect to both substrates when no voltage is applied, while liquid crystal molecules are aligned horizontally with respect to both substrates when a voltage is applied. It may be configured,
Liquid crystal molecules are aligned horizontally on both substrates when no voltage is applied, while liquid crystal molecules are aligned vertically on both substrates when voltage is applied. Good. As described above, the present invention can be applied to various liquid crystal and alignment methods.

<Embodiment of Electronic Device> Next, one embodiment in which the above-described liquid crystal device is used in a specific electronic device will be described. First, an embodiment in which the liquid crystal device of each of the above-described embodiments is applied to a mobile personal computer will be described. FIG. 14 is an explanatory diagram showing the configuration of this personal computer. The personal computer 1100 includes a main body 1104 having a keyboard 1102 and a liquid crystal device 100. As the liquid crystal device 100, the liquid crystal device 100 described in each embodiment is used.

Next, another embodiment in which the liquid crystal device of each of the above-described embodiments is applied to the display section of a mobile phone will be described. FIG. 15 is an explanatory diagram showing the configuration of this mobile phone. The mobile phone 1200 has a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206.
And a liquid crystal device 100. Liquid crystal device 1
For 00, the liquid crystal device 100 described in each embodiment is used.

Further, another embodiment in which the liquid crystal device of each of the above-described embodiments is applied to the finder section of a digital still camera will be described. FIG. 16 is an explanatory diagram showing the configuration of this digital still camera.
Connections with external devices are also shown in a simplified manner. An ordinary camera exposes a film with an optical image of a subject, whereas the digital still camera 1300 uses an optical image of the subject by a CCD (Charge Coupled Device).
ce) and the like to photoelectrically convert an image pickup signal to generate an image pickup signal. Here, the digital still camera 130
The liquid crystal device 100 described above is provided on the back surface of the case 1302 in No. 0, and the display is performed based on the image pickup signal from the CCD. Therefore, the liquid crystal device 10
0 functions as a finder for displaying a subject. Further, on the front side (back side in the figure) of the case 1302, the light receiving unit 130 including an optical lens, a CCD and the like.
4 are provided.

Here, when the photographer confirms the subject image displayed on the liquid crystal device 100 and presses the shutter button 1306, the image pickup signal of the CCD at that time is transferred / stored in the memory of the circuit board 1308. . In addition, in this digital still camera 1300, the case 13
A video signal output terminal 1312 and a data signal output terminal 1314 are provided on the side surface of 02. Then, as shown in the figure, a television monitor 1430 is connected to the former video signal output terminal, and a personal computer 144 is connected to the latter data signal output terminal 1314.
0s are connected as needed. Furthermore, the image pickup signal stored in the memory of the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

As the electronic equipment, in addition to the personal computer shown in FIG. 14, the mobile phone shown in FIG. 15, the digital still camera shown in FIG. 16, a liquid crystal television, a viewfinder type, a monitor direct-viewing type video tape recorder, a car, etc. Examples include a navigation device, an electronic notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a device equipped with a touch panel. The liquid crystal device described above can be applied as the display unit of these various electronic devices.

[0104]

As described above, according to the present invention,
By using a low-resistance conductive material for the wiring and the like formed in the electro-optical device, it is possible to efficiently achieve high definition and thinness at low cost.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing a structure of a liquid crystal device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view in the X direction of FIG.

FIG. 3 is a plan view showing a configuration in the vicinity of a sealing material in the liquid crystal device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view in the Y direction of FIG.

FIG. 5 is a cross-sectional view mainly showing the wiring of the liquid crystal device according to the first embodiment of the present invention.

FIG. 6 is a plan view showing an example of a wiring layout of the liquid crystal device according to the first embodiment of the present invention.

7A to 7F are cross-sectional views (a) to (f) schematically showing, in the order of steps, the method for manufacturing the liquid crystal device according to the first embodiment of the present invention.

FIG. 8 is a schematic perspective view showing an example of a liquid crystal device according to a second embodiment of the invention.

FIG. 9 is a schematic perspective view showing another example of the liquid crystal device according to the second embodiment of the invention.

10A and 10B are explanatory diagrams of a liquid crystal device according to a third embodiment of the present invention, in which FIG. 10A is a plan view showing a layout for one pixel, and FIG. It is sectional drawing in the A'line.

11A to 11D are cross-sectional views schematically showing a method of manufacturing a liquid crystal device according to a third embodiment of the invention in the order of steps.
FIG.

FIG. 12 is a sectional view (e) to (g) schematically showing a method of manufacturing a liquid crystal device according to a third embodiment of the present invention in the order of steps.
FIG.

13A to 13C are cross-sectional views (h) to (j) schematically showing the manufacturing method of the liquid crystal device according to the third embodiment of the invention in the order of steps.
Is.

FIG. 14 is an explanatory diagram showing a configuration of a personal computer that is an embodiment of an electronic apparatus using a liquid crystal device for its display unit.

FIG. 15 is an explanatory diagram showing a configuration of a mobile phone which is another embodiment of an electronic device using a liquid crystal device for its display unit.

FIG. 16 is an explanatory diagram showing a configuration of a digital still camera which is another embodiment of an electronic apparatus using a liquid crystal device for its display section.

FIG. 17 is a cross-sectional view that schematically shows the manufacturing method of the conventional liquid crystal device in the order of steps.

[Explanation of symbols]

100 ... Liquid crystal device 110 ... Sealing material 112 ... Sealing material 114 ... Conductive particles 122, 124, 126, 127 ... Driver IC chips 129a, 129b ... Bumps 130, 140 ... Adhesives 134, 144 ... Conductive particles 150 ... Flexible printed circuit board (FPC) 152 ... Base material 154 ... Wiring 160 ... Liquid crystal 200 ... Substrate (front side substrate) 202 ... Black light shielding film 204 ... Colored layer 205 ... Surface protective layer 208 ... Alignment film 210 ... Common electrode 300 ... Substrate (Backside substrate) 307 ... Surface protective layer 308 ... Alignment film 309 ... Opening 310 ... Segment electrode 312 ... Reflective conductive film 312X ... Conductive film 314, 314X, 314Y ... Transparent electrode (metal oxide layer) 320 ... TFD element 320a ... 1st TFD element 320b ... 2nd TFD element 330 ... Pixel electrodes 350, 360, 370, 38 0 ... Wiring 390 ... Resist mask 2100 ... Scan line 3100 ... Data line (signal line) 3112, 3112X, 3116 ... First metal film 3118 ... Insulating film 3120, 3120X ... Conductive film 3122, 3124 ... Second metal film 3140, 3140X , 3140Y, 3340 ... Transparent electrode 3160 ... Resist mask 3320 ... Reflective conductive film

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H092 GA25 GA34 GA42 GA45 GA48                       GA50 GA51 GA60 HA04 HA06                       HA14 HA19 JB24 JB33 MA18                       MA20 NA28 PA06 PA08                 5C094 AA05 AA15 AA42 AA44 BA43                       CA19 DA13 EA04 EA06 FB12                       GB10 HA08                 5G435 AA17 AA18 BB12 CC09 HH12                       KK05 LL07 LL08 LL14

Claims (7)

[Claims] 1. A method of manufacturing an electro-optical device, the method comprising: forming a first metal oxide layer having a pattern non-formation region and a pattern formation region on a substrate; on the substrate in the pattern non-formation region; Forming a conductive film containing silver and gold on the pattern forming region; and forming a second metal oxide layer on the conductive film so as to planarly overlap the pattern non-forming region and the pattern forming region. A step of forming a resist mask on the second metal oxide layer so as to planarly overlap with the pattern non-formation region and the pattern formation region, and to form a resist mask more than the first and second metal oxide layers. And a step of performing etching using an etchant having a high etching rate with respect to the conductive film. 2. A method of manufacturing an electro-optical device, the method comprising: forming a first metal oxide layer having a pattern non-formation region and a pattern formation region on a substrate; on the substrate in the pattern non-formation region; Forming a conductive film containing aluminum on the pattern forming region; forming a second metal oxide layer on the conductive film so as to planarly overlap the pattern non-forming region and the pattern forming region; A resist mask is formed on the second metal oxide layer so as to planarly overlap the pattern non-formation region and the pattern formation region, and the conductive mask is more conductive than the first and second metal oxide layers. And a step of performing etching using an etching solution having a high etching rate with respect to the film. 3. The method of manufacturing an electro-optical device according to claim 1, wherein the first and second metal oxide layers each include a transparent electrode. Optical device manufacturing method. 4. The method of manufacturing an electro-optical device according to claim 1, wherein the first and second metal oxide layers each include an indium tin oxide or tin oxide film. A method for manufacturing an electro-optical device, comprising: 5. The method for manufacturing an electro-optical device according to claim 1, wherein the etching solution contains a hydrochloric acid-based etching solution or a ferric chloride-based etching solution. Manufacturing method of electro-optical device. 6. In an electro-optical device, a substrate, an electro-optical material layer supported by the substrate, a sealing material provided around the electro-optical material layer of the substrate, and an inner side of an outer periphery of the sealing material. And a conductive film containing silver and gold provided on the substrate, and a metal oxide layered on the conductive film inside the outer periphery of the sealing material and patterned so that an edge portion is in contact with the substrate. An object optical layer, wherein the metal oxide layer passes through the sealing material and extends to a position outside the outer periphery of the sealing material. 7. An electronic apparatus comprising the electro-optical device according to claim 6.