JP2003185923A - Projection exposing device and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a projection exposing device which has a large exposure region and in which a mask and a glass substrate is arranged almost in parallel. <P>SOLUTION: The projection exposing device has an illumination optical system which illuminates a first object with light from a light source, and a projection optical system which projects the image of the first object M on a second object P disposed almost in almost parallel to the first object. The projection optical system is provided with a first image formation optical system K<SB>1</SB>which condenses the light of the first object and forms a primary image, and a second image formation optical system K<SB>2</SB>which condenses light from the primary image and forms a secondary image. The first image formation optical system has a first concave reflecting mirror M<SB>1</SB>and a first deflection member PBS<SB>1</SB>disposed in an optical path between the first object and an intermediate image forming position where the primary image is formed. The second image formation optical system K<SB>2</SB>has a second concave reflecting mirror M<SB>2</SB>and a second deflection member PBS<SB>2</SB>disposed in the optical path between the intermediate image forming position and the second object. The intermediate image at the intermediate image forming position is formed on a plane crossing the planes of the first object and the second object. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention forms a mask image on a substrate coated with a photosensitive material to form a device (semiconductor element,
The present invention relates to a projection exposure apparatus used for manufacturing an image pickup element, a liquid crystal display element, a thin film magnetic head, etc., and an exposure method for manufacturing a device using this projection exposure apparatus.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been widely used as display elements used in personal computers, televisions and the like. When manufacturing such a liquid crystal display panel,
A transparent thin film electrode is patterned on a glass substrate into a desired shape by a photolithography technique.

As an apparatus for such lithography, for example, a projection exposure apparatus equipped with a refraction type projection optical system is known. Recently, there has been a demand for higher definition in a liquid crystal display panel using low-temperature poly (polycrystalline) silicon, and a projection exposure apparatus having a higher resolution is desired.

[0004]

In the projection exposure apparatus having high resolution as described above, it is necessary to increase the numerical aperture of the projection optical system mounted on the projection exposure apparatus. Further, as the glass substrate becomes larger, a step-and-repeat type or scanning type projection exposure apparatus has been proposed. JP-A-11-295605
In the projection exposure apparatus disclosed in the publication, the mask (or reticle) and the glass substrate are arranged so as to be orthogonal to each other. However, the mechanism is complicated and the apparatus is high because it corresponds to a large glass substrate. It has a problem of causing cost increase.

The object of the present invention is to have a large exposure area,
It is an object of the present invention to provide a projection exposure apparatus that includes a projection optical system having good optical performance and that can arrange a mask (or reticle) and a glass substrate substantially in parallel, and an exposure method using the projection exposure apparatus.

[0006]

A projection exposure apparatus according to claim 1, wherein an illumination optical system for illuminating a first object with light from a light source and an image of the first object are substantially parallel to the first object. And a projection optical system for projecting onto a second object, the projection optical system condensing the light of the first object to form a primary image. When,
A second imaging optical system that collects light from the primary image to form a secondary image, the first imaging optical system including the first object and the intermediate image forming the primary image. An optical path between the intermediate imaging position and the second object, the second imaging optical system having a first concave reflecting mirror and a first deflecting member arranged in an optical path between the image position and the image position. A second concave reflecting mirror and a second deflecting member disposed therein, wherein an intermediate image at the intermediate image forming position is formed on a plane intersecting the planes of the first object and the second object. Characterize.

According to a second aspect of the projection exposure apparatus, the first deflecting member and the second deflecting member have an angle of about 45 ° with respect to the planes of the first object and the second object, respectively. It is characterized by being installed.

The projection exposure apparatus according to a third aspect is characterized in that the first deflecting member and the second deflecting member are constituted by a polarization beam splitter.

A projection exposure apparatus according to a fourth aspect is characterized in that the projection optical system has at least four reflecting surfaces.

According to the projection exposure apparatus of the first to fourth aspects, since the first object and the second object can be arranged substantially parallel to each other, a large glass substrate or the like can be used as the second object. Even when used, the mechanism of the device can be simplified.

According to a fifth aspect of the projection exposure apparatus, an illumination optical system that illuminates a first object with light from a light source, and an image of the first object are arranged substantially parallel to the first object. In a projection exposure apparatus having a projection optical system for projecting onto two objects, the projection optical system has a first refracting optical group and a first concave reflecting mirror, and collects the light of the first object. A second image forming optical system having a first image forming optical system for forming a primary image, a second refractive optical group and a second concave reflecting mirror, and collecting light from the primary image to form a secondary image. An optical system, a first reflecting mirror arranged in an optical path between the first object and an intermediate image forming position where the primary image is formed, and an optical system between the intermediate image forming position and the second object. A second reflecting mirror arranged in the optical path,
An intermediate image at the intermediate imaging position is formed on a plane that intersects the planes of the object and the second object.

According to the projection exposure apparatus of the fifth aspect, since the first object and the second object can be arranged substantially parallel to each other, even when a large glass substrate or the like is used as the second object, The mechanism of the device can be simplified.

An exposure method according to a sixth aspect is the exposure method using the projection exposure apparatus according to any one of the first to fifth aspects, wherein the illumination optical system is used to illuminate the mask. And a projection step of forming a pattern image of the mask on the photosensitive substrate using the projection optical system.

According to the exposure method of the sixth aspect, since the exposure is performed using the projection exposure apparatus in which the first object and the second object are arranged substantially parallel to each other and has a wide exposure area, the second object is large. Good exposure can be performed even when a glass substrate or the like is used.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A projection exposure apparatus according to embodiments of the present invention will be described below with reference to the drawings. Figure 1
FIG. 1 is a diagram schematically showing a configuration of a projection exposure apparatus equipped with a projection optical system according to a first embodiment of the present invention. Figure 1
In, a plate (glass substrate) P which is a photosensitive substrate
The Z axis is set along the normal direction of the plate, the X axis is set in the plate P plane in a direction parallel to the plane of FIG. 1, and the Y axis is set in the plate P plane in a direction perpendicular to the plane of FIG. There is.

The projection exposure apparatus shown in FIG. 1 includes a light source 1 which is, for example, a high pressure mercury lamp. The light source 1 is positioned at a first focus position of an elliptical mirror 2 having a reflecting surface formed of a spheroidal surface. Therefore, the illumination light flux emitted from the light source 1 forms a light source image at the second focal position of the elliptic mirror 2 via the mirror 3. The light beam from the light source image formed at the second focal position of the elliptical mirror 2 is converted into a substantially parallel light beam by the collimator lens 4, and then is passed to the wavelength selection filter 5 that selectively transmits the light beam in the desired wavelength range. Incident.

In the case of the present embodiment, the wavelength selection filter 5
Then, only the light of the i-line (λ = 365 nm) is selectively transmitted. The light of the exposure wavelength (i-line light) selected via the wavelength selection filter 5 enters a fly-eye lens 6 as an optical integrator. The fly-eye lens 6 is configured by arranging a large number of lens elements having a positive refracting power vertically and horizontally and densely so that the optical axis thereof is parallel to the reference optical axis AX.

Each lens element forming the fly-eye lens 6 has a rectangular cross section similar to the shape of the illumination field to be formed on the mask M (and the shape of the exposure area to be formed on the plate P). In addition, the incident side surface of each lens element forming the fly-eye lens 6 is formed in a spherical shape with a convex surface facing the incident side, and the exit side surface is formed in a spherical shape with a convex surface facing the exit side. . Therefore, the light flux incident on the fly-eye lens 6 is wavefront-divided by a large number of lens elements, and one light source image is formed on the back focal plane of each lens element.

That is, on the rear focal plane of the fly-eye lens 6, a substantial surface light source, that is, a secondary light source, which is composed of a large number of light source images, is formed. The light flux from the secondary light source formed on the back focal plane of the fly-eye lens 6 is incident on the aperture stop 7 arranged in the vicinity thereof. The aperture stop 7 is arranged at a position that is substantially conjugate with the entrance pupil plane of the projection optical system PL, which will be described later, and has a variable aperture portion for defining a range that contributes to the illumination of the secondary light source.

The aperture stop 7 changes the aperture diameter of the variable aperture portion to determine an illumination condition (a value (aperture of the secondary light source image on the pupil plane with respect to the pupil plane of the projection optical system). Ratio) to the desired value. The light from the secondary light source that has passed through the aperture stop 7 is subjected to the condensing action of the condenser optical system 8 and then illuminates the mask M on which a predetermined pattern is formed in a superimposed manner. Here, the mask M is held along the YZ plane on a mask stage (not shown).

The light flux transmitted through the pattern of the mask M forms an image of the mask pattern on the plate P which is a photosensitive substrate via the projection optical system PL. A plate P made of a glass substrate coated with a resist is held along an XY plane on a plate stage (not shown). In this way, the pattern of the mask M is sequentially exposed in each exposure region of the plate P by performing the batch exposure or the scan exposure while controlling the drive of the plate P two-dimensionally along the XY plane.

In batch exposure, so-called step
The pattern of the mask M is collectively exposed to each exposure region of the plate P according to the and repeat method. In this case, the shape of the illumination area on the mask M is a rectangle that is close to a square, and the cross-sectional shape of each lens element of the fly-eye lens 6 is also a rectangle that is close to a square.

On the other hand, in the scan exposure, according to the so-called step-and-scan method, while the mask M and the plate P are relatively moved with respect to the projection optical system PL, the pattern of the mask M with respect to each exposure region of the plate P. Is scanned and exposed. In this case, the shape of the illumination area on the mask M is a rectangular shape in which the ratio of the short side to the long side is, for example, 1: 3, and the cross-sectional shape of each lens element of the fly-eye lens 6 is also a similar rectangular shape. Becomes

FIG. 2 is a lens sectional view showing the lens arrangement of the projection optical system PL. In FIG. 2, a mask M having a predetermined circuit pattern formed on the object plane is placed in the XY plane,
A plate P, which is a glass substrate coated with a resist, is placed in the XY plane on the image plane. That is, the plane including the mask M and the plane including the plate P are parallel to each other.

The projection optical system PL includes a first imaging optical system K ₁ which forms a primary image of a pattern on the mask (first object) M, and
2 on the plate (second object) P based on the light from the primary image
It is composed of a second image forming optical system K ₂ which forms a next image. The first imaging optical system K ₁ includes a first partial optical system G _1P and a first partial optical system G _1P .
Polarizer POL ₁ , first polarizing beam splitter PBS ₁ which is a deflecting member, first wave plate WP ₁ for converting linearly polarized light into circularly polarized light, second partial optical system G _2P, and second wave plate WP ₂ When,
And a third partial optical system G _3P . Here, the first polarization beam splitter PBS ₁ is installed so that the first deflection surface P ₁ forms an angle of about 45 ° with respect to the planes of the mask M and the plate P.

The second image forming optical system K ₂ includes a fourth partial optical system G 2.
_4P , a second polarizer POL ₂ , a second polarizing beam splitter PBS ₂ that is a deflecting member, a third wave plate WP ₃ that converts linearly polarized light into circularly polarized light, a fifth partial optical system G _5P, and Four
It has a wave plate WP ₄ and a sixth partial optical system G _6P . Here, the second polarization beam splitter PBS ₂ is installed so that the second deflection surface P ₂ forms an angle of about 45 ° with respect to the planes of the mask M and the plate P.

The first partial optical system G _1P is constituted by a lens L _1K1 to the lens L _1K7, the second partial optical system G _2P, consists lens L _1K8 the first concave mirror M ₁ Tokyo, third portion The optical system G _3P includes lenses L _1K9 to L _1K15 .

The fourth partial optical system G _4P includes a lens L
_2K9 to the lens L _2K15 , the fifth partial optical system G _5P is composed of the lens L _2K8 and the second concave mirror M ₂ .
The sixth partial optical system G _6P includes lenses L _2K1 to L _2K7 .

Now, the circuit pattern on the mask M is, for example, an illumination optical system (1 to 1) equipped with an ultra-high pressure mercury lamp as a light source.
The illumination light (exposure light) from 8) illuminates with a substantially uniform illuminance. Here, the light emitting Y ₀ point on the mask 10 along the -Z direction proceeds in FIG. 2, enters the first partial optical system _{G 1P (L 1K1 ~L 1K7)} . Here, the first partial optical system G _1P is arranged such that the light _passing through the first partial optical system G _1P becomes a parallel light flux. And the
Light transmitted through one polarizer POL ₁ is parallel to the paper surface (XZ plane)
Linearly polarized light (P-polarized light), passes through the first polarization plane P ₁ of the first polarization beam splitter PBS ₁ , goes in the −Z direction, and is linearly polarized (P-polarized light) via the first wave plate WP _1. ) Is converted into circularly polarized light, and the lens L _{1K8 of} the second partial optical system G _2P
Via the first concave mirror M ₁ toward the + Z direction, again _passes through the lens L _1K8 , circularly polarized light is converted to linearly polarized light (S polarized light) via the first wave plate WP ₁ , It is reflected in the + X direction by the first polarization plane P ₁ of the 1-polarization beam splitter PBS ₁ and is linearly polarized (S) by the second wavelength plate WP _2.
The polarized light is converted into circularly polarized light, and the primary image FP1 is formed via the third partial optical system G _3P (lens L _1K9 to lens L _1K15 ).

The plane containing the primary image (intermediate image) FP1 is a plane perpendicular to the X axis. That is, this intermediate image is formed on a plane that intersects the planes of the first object (mask M) and the second object (plate P).

The light from the primary image FP1 is the fourth partial optical system.
G_2P(L_2K9~ L_2K15). Where the fourth part
Optical system G_4PIs the fourth partial optical system G_4PLight through is parallel
It is arranged so that it becomes a light flux. And the second polarizer
POL₂The light passing through is a straight line (XY plane) perpendicular to the paper surface.
It becomes polarized (S-polarized) light, and the second polarized beam split
Tta PBS₂Second deflection plane P of₂Reflected in the direction of + Z
Paddle, third wave plate WP ₃Linearly polarized light (S polarized light) through
Converted to circularly polarized light, the fifth partial optical system G_5PLens L_2K8
Through the second concave mirror M₂Reflected in the direction of -Z
Yes, again the lens L_2K8Through the third wave plate WP₃To
The circularly polarized light is converted to linearly polarized light (P polarized light) via the
2 polarization beam splitter PBS₂Second deflection plane P of₂Transparent
Then, the fourth wave plate WP_FourLinearly polarized light (P polarized light) via
Is converted into circularly polarized light, and the sixth partial optical system G_6PThrough the
A secondary image FP2 is formed on the rate P.

In the projection optical system PL, the optical members are symmetrically arranged between the mask M and the plate P with respect to the position where the primary image FP1 is formed. The projection magnification to is approximately equal and forms an erect image.

According to the projection exposure apparatus of the first embodiment, since the mask M and the plate P can be arranged substantially parallel to each other, a liquid crystal display panel using a large glass substrate or the like as the plate P. Also in the case of manufacturing, etc., there are less restrictions on the size of the mask M, and the mechanism of the apparatus can be simplified.

In the first embodiment,
The first polarization beam splitter PBS ₁ and the second polarization beam splitter PBS ₂ include a first polarization plane P ₁ and a second polarization plane P 1.
₂ is approximately 45 ° with respect to the planes of the mask M and the plate P
However, the angle can be appropriately selected because it is sufficient that the exposure light can be guided to the plate P from the mask M arranged substantially parallel (substantially parallel).

Further, in the first embodiment,
The first concave mirror M ₁ , the first deflecting surface P ₁ , the second deflecting surface P ₂ and the second
Although it has four reflecting surfaces of the concave mirror M ₂ , it is not limited to four and guides the exposure light to the plate P from the mask M arranged substantially parallel (substantially parallel). It can be appropriately selected so that

Next, FIG. 3 is a sectional view showing the lens arrangement of the projection optical system PL of the projection exposure apparatus according to the second embodiment of the present invention.
Shown in. The configuration of the projection exposure apparatus according to the second embodiment is the same as the configuration of the projection exposure apparatus according to the first embodiment shown in FIG. In this projection exposure apparatus, a mask M having a predetermined circuit pattern formed on the object plane
Is placed in the XY plane, and a plate P, which is a glass substrate coated with a resist, is placed in the XY plane on the image plane. That is, the plane including the mask M and the plane including the plate P are parallel to each other. The mask M is illuminated substantially uniformly by the illumination optical system (1 to 8), and the pattern on the mask M is projected and exposed on the plate P via the projection optical system PL.

The configuration of the projection optical system PL shown in FIG. 3 will be described here. The projection optical system PL is a first imaging optical system K ₁ that forms a primary image of a pattern on the mask (first object) M, and a first imaging optical system K ₁ that deflects light from the mask M by 90 °. A first deflecting surface P ₁ incident on the system K ₁ , a second imaging optical system K ₂ for forming a secondary image on the plate (second object) P based on light from the primary image, and a second image forming optical system K ₂ . The second deflecting surface P for deflecting the light from the imaging optical system K ₂ by 90 ° and guiding it onto the plate.
Composed of ₂ and.

The first imaging optical system K ₁ has a first partial optical system composed of lenses and _{(L 1K1 ~L 1K7) G 1P} , a first concave mirror M _1. The second imaging optical system K ₂ has a second partial optical system (L _{2K1 to} L _2K7 ) G _2P composed of a lens, and a second concave mirror M ₂ .

The optical axis AX1 of the first imaging optical system K ₁ is XY
Parallel to the direction. Similarly, the optical axis A of the second imaging optical system K ₂
X2 is parallel to the XY directions. Here, the optical axis AX1 and the optical axis AX2 are shifted by SH in the Z direction.

The circuit pattern on the mask M has, for example, an illumination optical system (1 to 1) equipped with an ultra-high pressure mercury lamp as a light source.
The illumination light (exposure light) from 8) illuminates with a substantially uniform illuminance. Here, the light emitted from a certain point Y ₀ on the mask M travels along the −Z direction in FIG.
90 ° due to the first deflecting surface P ₁ which is installed at an angle of 45 ° with respect to
It is deflected and moves in the + X direction, and the first partial optical system G _1P (L
Enters the _1K1 ~L _1K7), reach the first concave mirror M _1. The light reflected by the first concave mirror M ₁ and again passing through the first partial optical system G _1P forms a primary image FP1.

The plane containing the primary image (intermediate image) FP1 is a plane perpendicular to the X axis. That is, this intermediate image is formed on a plane that intersects the planes of the first object (mask M) and the second object (plate P).

The light from the primary image FP1 is incident on the second partial optical system G _2P (L _{2K1 to} L _2K7 ) and reaches the second concave mirror M ₂ . The light reflected by the second concave mirror M ₂ and again passing through the second partial optical system G _2P is deflected by 90 ° by the second deflecting surface P ₂ obliquely arranged with respect to the mask M, and the −Z direction. To form a secondary image FP2 on the plate P.

The exposure area of the projection optical system PL will be described with reference to FIG. A region IF centered on the optical axis AX1 of the first imaging optical system K ₁ and surrounded by a semicircle with a radius Y1
Reference numeral 1 denotes an image forming area of the first image forming optical system K _{1 at} the position of the primary image FP1. The optical axis AX2 of the second imaging optical system K ₂ is shifted by an amount indicated by SH in the -Z direction with respect to the first imaging optical axis AX1 of the optical system K _1. In addition, the second imaging optical system K
The _second optical axis AX2 as the center, the area IF2 surrounded by a semicircle of radius Y2 represents an object surface area on the primary image FP1 position of the second imaging optical system K _2. Therefore, the exposure area EF of the projection optical system PL on the plate P is an area IF1 surrounded by a semicircle.
Is an elliptical area in which the area IF2 surrounded by a semicircle overlaps.

According to the projection exposure apparatus of the second embodiment, since the mask M and the plate P can be arranged substantially parallel to each other, a liquid crystal display panel using a large glass substrate or the like as the plate P. Also in the case of manufacturing, etc., there are less restrictions on the size of the mask M, and the mechanism of the apparatus can be simplified.

In the second embodiment,
The first deflecting surface P ₁ , the first concave mirror M ₁ , the second deflecting surface P ₂ and the second
Although it has four reflecting surfaces of the concave mirror M ₂ , it is not limited to four and guides the exposure light to the plate P from the mask M arranged substantially parallel (substantially parallel). It can be appropriately selected so that

Next, the first embodiment (FIGS. 1 and 2)
And when a semiconductor device as a microdevice is obtained by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the projection exposure apparatus shown in the second embodiment (FIGS. 1 and 3). Figure 5 for an example of the method
This will be described with reference to the flowchart in FIG.

Hereinafter, with reference to the flowchart of FIG.
A method of manufacturing a semiconductor device as a micro device for forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate will be described.

First, in step S301 of FIG.
A metal film is deposited on one lot of wafers. In the next step S302, a photoresist is applied on the metal film on the wafer of the 1 lot. After that, step S
At 303, the image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of one lot through the projection optical system (projection optical module) using a projection exposure apparatus. Then, in step S304, the photoresist on the one lot of wafers is developed, and in step S305, the resist pattern is used as a mask on the one lot of wafers to form a pattern on the mask. A corresponding circuit pattern is formed in each shot area on each wafer. After that, a device such as a semiconductor element is manufactured by forming a circuit pattern on an upper layer. According to the above-described semiconductor device manufacturing method, it is possible to obtain a semiconductor device having an extremely fine circuit pattern with high throughput.

Also, in this projection exposure apparatus, a liquid crystal display element as a microdevice can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Less than,
A method of manufacturing a liquid crystal display device will be described with reference to the flowchart of FIG. In FIG. 6, a pattern forming step S4
In 01, a so-called photolithography step is performed in which the pattern of the mask is transferred and exposed on a photosensitive substrate (such as a glass substrate coated with a resist) using this projection exposure apparatus. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Then, the exposed substrate is subjected to a developing process, an etching process,
A predetermined pattern is formed on the substrate through each step such as the reticle peeling step, and the process proceeds to the next color filter forming step S402.

Next, in the color filter forming step S402, 3 corresponding to R (Red), G (Green) and B (Blue) are performed.
Many sets of one dot are arranged in a matrix,
Alternatively, a color filter is formed by arranging a set of three stripe filters R, G, and B in the horizontal scanning line direction. Then, after the color filter forming step S402,
The cell assembling step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembling step S403, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S401 and the color filter obtained in the color filter forming step S402 to form a liquid crystal panel (liquid crystal cell). ) Is manufactured.

Then, the module assembling step S404
Then, each component such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) is attached to complete a liquid crystal display element. According to the method of manufacturing a liquid crystal display element described above, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

[0052]

EXAMPLES Table 1 below shows the projection optical system P shown in FIG.
The values of specifications of L are listed. However, the number at the left end indicates the order from the mask M side to the plate P, r is the radius of curvature of the lens, d is the lens surface distance, and n is the refractive index () for light of the exposure wavelength of the glass material (λ = 365 nm) ( At the position where the positive and negative signs change, it means that the light is reflected). In Table 1, the image height Y is 71 mm and the numerical aperture on the plate P side is 0.2. The 0th surface shows the mask M. Here, the rms value of the wavefront aberration W at each image height of the first example listed in Table 1 is listed in Table 2 with the exposure wavelength λ = 365 nm as a unit. From Table 2, it was confirmed that the projection optical system of Example 1 of the present invention had good optical performance.

Table 3 below lists values of specifications of the projection optical system PL shown in FIG. However, the leftmost number is the mask M
The order from the side to the plate P is shown, r is the radius of curvature of the lens, d is the distance between the lens surfaces, and n is the refractive index for the light of the exposure wavelength of the glass material (λ = 365 nm) (at the position where the positive and negative signs change, It means to reflect). In Table 3, the radius Y1 of the image forming area IF1 of the first image forming optical system K ₁ and the radius Y2 of the object plane area IF2 of the second image forming optical system K ₂ which determine the exposure area EF are both 80 mm.
And the numerical aperture on the plate P side is 0.2. The 0th surface shows the mask M. Here, the rms value of the wavefront aberration W at a typical value of Y2 is listed in Table 4 with the exposure wavelength λ = 365 nm as a unit. (Table 4) Y2 [unit mm] Wavefront aberration Wrms 30.0 0.0359λ 36.0 0.0157λ 42.0 0.0056λ 52.0 0.0033λ 57.0 0.0020λ 62.0 0.0028λ 68. 0 0.0040λ 74.0 0.0036λ 80.0 0.0050λ From Table 4, it was confirmed that the projection optical system of the second example of the invention had good optical performance.

[0054]

According to the projection exposure apparatus of the present invention, the first
Since the object and the second object can be arranged substantially parallel to each other, a wide exposure area can be secured, and the mechanism of the apparatus can be simplified even when a large glass substrate or the like is used as the second object. You can

According to the exposure method of the present invention, the first
Since the exposure is performed using the projection exposure apparatus in which the object and the second object are arranged substantially parallel to each other and has a wide exposure area, good exposure can be performed even when a large glass substrate or the like is used as the second object. .

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a lens configuration diagram of a projection optical system according to the first embodiment of the present invention.

FIG. 3 is a lens configuration diagram of a projection optical system according to a second embodiment of the present invention.

FIG. 4 is a diagram showing an exposure area of a projection optical system according to a second embodiment of the present invention.

FIG. 5 is a flowchart for explaining a method for manufacturing a microdevice (semiconductor device) using the projection exposure apparatus according to the embodiment of the present invention.

FIG. 6 is a flowchart for explaining a method for manufacturing a microdevice (liquid crystal display element) using the projection exposure apparatus according to the embodiment of the present invention.

[Explanation of symbols]

1-8 ... Illumination optical system, M ... Mask, PL ... Projection optical system,
P ... Plate, K ₁ ... First imaging optical system, P ₁ ... First deflection surface, PBS ₁ ... First polarization beam splitter, K ₂ ... Second imaging optical system, P ₂ ... Second deflection surface, PBS ₂ … Second polarized beam splitter.

Claims (6)

[Claims] 1. An illumination optical system for illuminating a first object with light from a light source, and a projection optical system for projecting an image of the first object onto a second object arranged substantially parallel to the first object. In the projection exposure apparatus, the projection optical system collects the light of the first object to form a primary image, and the projection optical system collects the light from the primary image to form a primary image. A second image forming optical system for forming a next image, wherein the first image forming optical system is arranged in an optical path between the first object and an intermediate image forming position where the primary image is formed. First
A second concave reflecting mirror and a second deflecting mirror, which have a concave reflecting mirror and a first deflecting member, and wherein the second image forming optical system is arranged in an optical path between the intermediate image forming position and the second object. A projection exposure apparatus having a deflecting member, wherein an intermediate image at the intermediate image forming position is formed on a plane that intersects the planes of the first object and the second object. 2. The first deflecting member and the second deflecting member are installed at an angle of about 45 ° with respect to the planes of the first object and the second object, respectively. Item 2. The projection exposure apparatus according to item 1. 3. The projection exposure apparatus according to claim 1, wherein the first deflecting member and the second deflecting member are composed of polarization beam splitters. 4. The projection exposure apparatus according to claim 1, wherein the projection optical system has at least four reflecting surfaces. 5. An illumination optical system for illuminating a first object with light from a light source, and a projection optical system for projecting an image of the first object onto a second object arranged substantially parallel to the first object. In the projection exposure apparatus having :, the projection optical system has a first refracting optical group and a first concave reflecting mirror, and a first imaging for condensing the light of the first object to form a primary image. A second imaging optical system having an optical system, a second refracting optical group, and a second concave reflecting mirror, and condensing light from the primary image to form a secondary image; the first object; A first reflecting mirror arranged in an optical path between the intermediate image forming position where the primary image is formed, and a second reflecting mirror arranged in an optical path between the intermediate image forming position and the second object; And a mirror, wherein an intermediate image at the intermediate imaging position is formed on a plane intersecting the planes of the first object and the second object. Light equipment. 6. An exposure method using the projection exposure apparatus according to claim 1, further comprising: an illumination step of illuminating the mask using the illumination optical system, and the projection optical system. And a projection step of forming a pattern image of the mask on a photosensitive substrate by using.