JP2003179212A - キャパシタ、メモリ素子およびその製造方法 - Google Patents

キャパシタ、メモリ素子およびその製造方法

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Publication number
JP2003179212A
JP2003179212A JP2001378875A JP2001378875A JP2003179212A JP 2003179212 A JP2003179212 A JP 2003179212A JP 2001378875 A JP2001378875 A JP 2001378875A JP 2001378875 A JP2001378875 A JP 2001378875A JP 2003179212 A JP2003179212 A JP 2003179212A
Authority
JP
Japan
Prior art keywords
film
capacitor
electrode film
srbi
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001378875A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003179212A5 (enExample
Inventor
Yasuyuki Ito
康幸 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001378875A priority Critical patent/JP2003179212A/ja
Publication of JP2003179212A publication Critical patent/JP2003179212A/ja
Publication of JP2003179212A5 publication Critical patent/JP2003179212A5/ja
Abandoned legal-status Critical Current

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  • Semiconductor Memories (AREA)
JP2001378875A 2001-12-12 2001-12-12 キャパシタ、メモリ素子およびその製造方法 Abandoned JP2003179212A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001378875A JP2003179212A (ja) 2001-12-12 2001-12-12 キャパシタ、メモリ素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001378875A JP2003179212A (ja) 2001-12-12 2001-12-12 キャパシタ、メモリ素子およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003179212A true JP2003179212A (ja) 2003-06-27
JP2003179212A5 JP2003179212A5 (enExample) 2005-06-09

Family

ID=19186470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001378875A Abandoned JP2003179212A (ja) 2001-12-12 2001-12-12 キャパシタ、メモリ素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP2003179212A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972990B2 (en) 2004-03-18 2005-12-06 Kabushiki Kaisha Toshiba Ferro-electric memory device and method of manufacturing the same
JP2006135339A (ja) * 2004-11-08 2006-05-25 Hynix Semiconductor Inc ジルコニウム酸化膜を有する半導体素子のキャパシタ及びその製造方法
JP2007096178A (ja) * 2005-09-30 2007-04-12 Toshiba Corp 半導体装置およびその製造方法
JP2007534140A (ja) * 2003-07-22 2007-11-22 インフィネオン テクノロジーズ アクチエンゲゼルシャフト デバイス内にバリア層を有するコンタクトホールを形成する方法及び得られるデバイス
JP5076890B2 (ja) * 2005-06-17 2012-11-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN114121953A (zh) * 2020-08-31 2022-03-01 无锡华润微电子有限公司 存储单元结构、存储阵列结构及其制备方法
CN116234297A (zh) * 2022-01-18 2023-06-06 北京超弦存储器研究院 动态存储装置及其制备方法
US20240276737A1 (en) * 2020-01-09 2024-08-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007534140A (ja) * 2003-07-22 2007-11-22 インフィネオン テクノロジーズ アクチエンゲゼルシャフト デバイス内にバリア層を有するコンタクトホールを形成する方法及び得られるデバイス
US6972990B2 (en) 2004-03-18 2005-12-06 Kabushiki Kaisha Toshiba Ferro-electric memory device and method of manufacturing the same
JP2006135339A (ja) * 2004-11-08 2006-05-25 Hynix Semiconductor Inc ジルコニウム酸化膜を有する半導体素子のキャパシタ及びその製造方法
JP5076890B2 (ja) * 2005-06-17 2012-11-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8614104B2 (en) 2005-06-17 2013-12-24 Fujitsu Semiconductor Limited Method for manufacturing semiconductor device
JP2007096178A (ja) * 2005-09-30 2007-04-12 Toshiba Corp 半導体装置およびその製造方法
US20240276737A1 (en) * 2020-01-09 2024-08-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
CN114121953A (zh) * 2020-08-31 2022-03-01 无锡华润微电子有限公司 存储单元结构、存储阵列结构及其制备方法
CN116234297A (zh) * 2022-01-18 2023-06-06 北京超弦存储器研究院 动态存储装置及其制备方法

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