JP2003179004A - Method for manufacturing semiconductor device and dicing device usable for the method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the quality of semiconductor workpiece surfaces. <P>SOLUTION: A blade 10 is built of different materials suitable for dealing with different materials of the workpiece, and has a three-layer structure with a wire-dealing layer 10b at the middle sandwiched in between resin-dealing layers 10a on both sides. In a substrate 7 mounted with a multiplicity of elements, a base material 2h is provided for instance made of a glass-containing epoxy resin, an en-bloc molding 8 is formed thereon, and also power-feeding wires 2d to be copper-plated are provided on the dicing line. During the dicing process after the en-bloc molding process, the resin section of the substrate 7, the molding 8, and the wires 2d may be diced by one and the same blade 10 because the blade 10 is built of materials for properly dealing with the different materials of the workpiece, and this improves semiconductor device quality. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a technique effective when applied to quality improvement in dicing after collective molding.

[0002]

2. Description of the Related Art The techniques described below are for studying the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

Among resin-encapsulated semiconductor devices, a semiconductor device in which a semiconductor chip is mounted on a substrate such as a wiring substrate and encapsulated by a resin mold is called a collective mold in order to improve its manufacturing efficiency. A method has been devised.

The collective mold uses, for example, a multi-cavity substrate (wiring substrate) in which a plurality of device regions (regions for forming one semiconductor device) are formed, and a plurality of device regions on the multi-cavity substrate. After mounting a semiconductor chip on each of them, resin molding is performed with a plurality of device regions being collectively covered by one cavity of a molding die.

After the collective molding, the collective sealing portion, which is the resin portion formed by the molding, is diced into individual device regions by using a dicing device to be individualized into a semiconductor device.

Therefore, in dicing after batch molding, for example, when the multi-piece substrate is a resin substrate,
The resin part of the multi-piece board, the wiring part made of copper, etc.
The collective sealing portion made of the sealing resin is cut together with the cutting blade.

As a result, one member made of a plurality of different materials is used.
Since the blades are cut together by one blade, a blade made of a material having a good compatibility is used for a plurality of members made of different materials.

The collective sealing and the subsequent dicing technique are described in, for example, Japanese Patent Laid-Open No. 2000-124163.

[0009]

However, in the dicing of the above technique, the blades made of a material having a good compatibility with each other are used for cutting the members made of a plurality of different materials.
Dicing cannot be performed under optimum conditions for individual materials.

Therefore, there is a problem that the dicing processing conditions such as the tool life and the cutting speed are restricted.

Another problem is that the surface to be processed and its quality become unstable due to dicing.

For example, when dicing a resin substrate having a wiring portion made of copper or the like after being collectively molded, since copper has a stickiness, burrs or the like of the wiring portion of copper should be projected on the surface to be processed. Therefore, there is a problem that the quality of the semiconductor device is deteriorated.

An object of the present invention is to provide a semiconductor device manufacturing method for improving the quality of a surface to be processed and a dicing apparatus used for the same.

Another object of the present invention is to provide a method of manufacturing a semiconductor device and a dicing apparatus used for the same for improving the life of a cutting tool in dicing.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0016]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, the present invention is assembled using substrates having a plurality of different materials, and the substrates are cut by a cutting blade made of a plurality of materials having different characteristics corresponding to each material. To do.

Further, the present invention is provided with a blade for cutting a substrate having a plurality of different materials,
The blade for cutting is made of a plurality of materials having different characteristics corresponding to each material.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

Further, in the following embodiments, when there is a need for convenience, the description will be divided into a plurality of sections or embodiments, but unless otherwise specified, they are not unrelated to each other. The one is in a relationship such as a partial or whole modification of the other, details, and supplementary explanation.

Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, amount, range, etc.), it is limited to a specific number when explicitly stated and in principle. The number is not limited to the specific number except the case, and may be a specific number or more or less.

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for explaining the embodiments, members having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted.

FIG. 1 is an external perspective view showing an example of the structure of a BGA assembled by the semiconductor device manufacturing method according to the embodiment of the present invention, FIG. 2 is a sectional view showing the structure of the BGA shown in FIG. 1, and FIG. FIG. 4 is a structural conceptual view showing an example of a basic structure of a main part of a dicing device used in the method for manufacturing a semiconductor device of the present invention, FIG. 4 is a perspective view showing an example of a structure of a blade provided in the dicing device shown in FIG. 5 is a partially enlarged perspective view showing the structure of the portion A shown in FIG. 4, FIG. 6 is a sectional view showing an example of a substrate cutting state by the blade shown in FIG. 5, and FIG.
FIG. 8 is a plan view showing an example of the locus of movement of the blade in the dicing process after collective molding in the assembly of the BGA shown in FIG. 1, FIG. 8 is a side view showing an example of the locus of movement of the blade shown in FIG. 7, and FIG. 1 is a cross-sectional view showing an example of the structure of the substrate at the start of assembly of the BGA shown in FIG. 1, FIG. 10 is a cross-sectional view showing an example of the structure of the substrate at the time of die bonding in the assembly of the BGA shown in FIG. 1, and FIG. 11 is shown in FIG. BGA to show
12 is a sectional view showing an example of the structure of the substrate at the time of wire bonding in the assembly of FIG. 12, FIG. 12 is a sectional view showing an example of the structure of the substrate at the time of cleaning the substrate of the BGA shown in FIG. 1, and FIG. 13 is the BGA shown in FIG. 14 is a partial cross-sectional view showing an example of the structure of the substrate at the time of collective molding in the assembly of FIG. 14, FIG. 14 is a cross-sectional view showing an example of the structure of the substrate at the time of ball mounting in the assembly of BGA shown in FIG. 1, and FIG. 15 is shown in FIG. BGA
16 is a cross-sectional view showing an example of the structure of the substrate at the time of ball cleaning in the assembly of FIG. 16, FIG. 16 is a cross-sectional view showing an example of the structure of the substrate at the time of dicing in the assembly of BGA shown in FIG. 1, and FIG. 17 is the dicing shown in FIG. Individualized B
It is a perspective view which shows an example of a structure of GA.

The semiconductor device assembled by the method for manufacturing a semiconductor device of the present embodiment shown in FIGS.
A plurality of solder bumps 3 which are called GA (Ball Grid Array) 9 and which are electrodes for external connection are arranged on the back surface 2b of the package substrate 2 in an array formed by a plurality of rows / a plurality of columns. It is a thing.

Further, the BGA 9 uses a multi-cavity substrate (wiring substrate) 7 which is a substrate on which a plurality of device regions 7a and dicing lines 7b separating the plurality of device regions 7a are formed as shown in FIG. Then, resin molding is performed in a state of collectively covering the plurality of device regions 7a defined by the dicing lines 7b (hereinafter, this is referred to as collective molding), and the collective molding portion (collective sealing) formed by this shown in FIG. The part 8 and the multi-piece substrate 7 are diced into individual pieces after molding.

At this time, dicing was performed using the multi-layered blade 10 shown in FIGS. 4 and 5.

Further, as shown in FIG. 2, in the BGA9,
A solder resist 2g made of, for example, a polyimide resin is formed on both surfaces of the main surface 2a which is the chip mounting surface of the package substrate 2 and the back surface 2b on the opposite side thereof, and the package substrate 2 is provided inside thereof. Also has a base material 2h such as an epoxy resin containing glass.

The structure of the BGA 9 will be described. The package substrate 2 on which the semiconductor chip 1 is mounted and the pad 1 which is a surface electrode formed on the main surface 1b of the semiconductor chip 1.
The bonding wire 4 for connecting a and the corresponding connection terminal (terminal) 2c of the package substrate 2, the semiconductor chip 1 and the bonding wire 4 are sealed, and formed on the main surface 2a side of the package substrate 2. Resin sealing body 6
And a plurality of solder bumps 3 arranged in an array on the back surface 2b of the package substrate 2 as external electrodes.

The molding resin used for the collective molding in the resin sealing step is, for example, a thermosetting epoxy resin, which forms the collective molding section 8 shown in FIG. The resin sealing body 6 is formed by dicing into individual pieces.

The package substrate 2 has a back surface 2
A plurality of bump lands 2e, which are electrodes to which the solder bumps 3 are attached, are formed on the surface b, and the base material 2 inside
The via hole 2f corresponds to the bump land 2e in h.
Are formed.

Further, the package substrate 2 is formed with a plurality of wirings (wiring portions) 2d made of copper foil or the like and connected to the connection terminals 2c on the main surface 2a side thereof.
A solder resist 2g which is an insulating layer is formed to cover a part of the wiring 2d.

Further, as shown in FIG. 2, the semiconductor chip 1
Are formed of, for example, silicon, a semiconductor integrated circuit is formed on the main surface 1b, and a plurality of pads 1a which are external electrodes are formed on the peripheral portion of the main surface 1b.

Further, the semiconductor chip 1 is fixed to the package substrate 2 near the center of the main surface 2a by a die bond material 5 which is an adhesive material.

The bonding wire 4 connected by wire bonding is, for example, a gold wire, and connects the pad 1a of the semiconductor chip 1 and the corresponding connection terminal 2c of the package substrate 2 to each other.

Further, a plurality of solder bumps 3 which are electrodes for external connection are attached to each bump land 2e on the back surface 2b of the package substrate 2, and are formed by a plurality of rows / a plurality of columns except the central portion thereof. Are arranged in an array.

Next, the dicing apparatus 11 used in the method of manufacturing the semiconductor device of the present embodiment shown in FIG. 3 will be described.

The dicing apparatus 11 shown in FIG. 3 is used, for example, in a dicing process after collective molding when assembling a collective mold type BGA 9, and is a wiring board having a plurality of different materials. The dicing substrate 7 is diced.

In this embodiment, a resin portion such as the base material 2h and the solder resist 2g, a metal wiring (wiring portion) 2d such as a power supply line, and a sealing resin forming the collective molding portion 8 are used. Therefore, the cutting blade 10 made of a plurality of materials having different characteristics corresponding to the respective materials of the multi-cavity substrate 7 including the collective molding portion 8 is provided. ing.

The resin portion such as the base material 2h and the solder resist 2g and the other resin portion made of the sealing resin forming the collective molding portion 8 are regarded as substantially the same resin portion, and therefore, in the present embodiment. As shown in FIG. 5, the blade 10 of the dicing apparatus 11 of the embodiment has resin corresponding layers 10a made of a material having characteristics corresponding to the resin portion and the other resin portions on the front and back surfaces, and the resin corresponding layers 10a on both sides are provided. The wiring corresponding layer 10b is formed so as to be sandwiched between.

In other words, the blade 10 has a resin-corresponding layer 10a disposed on the front and back surfaces thereof and resin-corresponding layers 10a on both sides.
It has a three-layer structure composed of the wiring corresponding layer 10b sandwiched between the two layers, and the adjacent layers are attached to form the blade 10.

Here, detailed features of the blade 10 will be described with reference to FIG.

In the multi-cavity substrate 7 shown in FIG. 6, the base material 2h is mainly made of glass-filled epoxy resin or the like, and the collective mold portion 8 made of thermosetting resin or the like is formed thereon. , Further dicing line 7b
(See FIG. 7) A wiring 2d which is a power supply line for copper plating and which is a difficult-to-cut material is formed on the upper surface. Therefore, at the time of dicing after batch molding, the resin portion of the multi-cavity substrate 7 is formed. Then, the other resin portion which is the collective molding portion 8 and the wiring 2d are diced together.

Therefore, the blade 10 is made of a material having different characteristics corresponding to each material of the workpiece, the wiring corresponding layer 10b is formed in the central portion, and the resin corresponding layer 10a is formed on both sides thereof. It has a three-layer structure.

The characteristics of the material forming the blade 10 are determined by the material of the abrasive grains, the size of the abrasive grains, the density of the abrasive grains and the brittleness of the abrasive grain holding material.

For example, the material of the abrasive grains is diamond or nitride, and the abrasive grain holding material is
Resin-based adhesives and the like.

Therefore, in the case of the blade 10 shown in FIG.
As the material of the abrasive grains, for example, diamond is used for both the wiring corresponding layer 10b and the resin corresponding layer 10a. At that time, the size of the abrasive grains is larger than that of the resin corresponding layer 10a in the wiring corresponding layer 10b for cutting the wiring 2d. Use a small diamond.

Further, the density of the abrasive grains is determined by the resin corresponding layer 10a.
Is made larger and the wiring corresponding layer 10b is made smaller.

That is, the relatively hard wiring corresponding layer 10b
The wiring 2d is mainly shaved, and the resin portion is shaved mainly by the resin corresponding layer 10a which is softer than the wiring corresponding layer 10b.

Further, as the adhesive as the abrasive grain holding material,
The resin corresponding layer 10a and the wiring corresponding layer 10b having the same degree of brittleness are used. This is for equalizing the degree of wear of the wiring corresponding layer 10b and the resin corresponding layer 10a in the blade 10.

The width of the blade 10 shown in FIG. 6 thus formed is, for example, about 250 to 300 μm, and the diameter thereof is about 2 inches or 3 inches. However, the present invention is not limited to these.

In addition, the wiring corresponding layer 10b and the resin corresponding layer 10
The width of each a is determined by the size and width of the workpiece to be diced.

Therefore, the respective members such as the multi-piece substrate 7 and the collective molding section 8 are the wiring corresponding layer 10b and the resin corresponding layer 10a made of the materials corresponding to the respective members, or the positions of the respective members. Wiring corresponding layer 10b and resin corresponding layer 10a arranged at positions corresponding to
Disconnect by.

For example, the wiring 2d such as a power supply line formed on the multi-piece substrate 7 is cut by the wiring corresponding layer 10b of the blade 10, and the base material 2h and the collective molding part are cut together with the cutting of the wiring 2d. The resin portion such as 8 is also cut by the resin corresponding layer 10a of the blade 10.

As a result, the region including the wiring 2d is cut by the wiring corresponding layer 10b of the blade 10, so that it is possible to prevent the burr of the copper wiring 2d from protruding from the processed surface of the multi-cavity substrate 7. As a result, it is possible to prevent the quality of the BGA 9 from being degraded by dicing (individualization).

Next, a method of manufacturing the semiconductor device (BGA 9) in this embodiment will be described.

The method of manufacturing the BGA 9 of this embodiment uses the multi-cavity substrate 7 which is a wiring substrate shown in FIGS. 7 and 9 in which a plurality of device regions 7a are connected in a matrix arrangement. The BGA 9 is manufactured by resin-molding a plurality of device regions 7a of the same size, which are partitioned and formed on the multi-piece substrate 7, in a state that they are collectively covered, and then diced into individual pieces.

First, a multi-piece substrate (wiring substrate) shown in FIG. 9 which is a substrate having a resin portion such as a base material 2h and a metal wiring (wiring portion) 2d and formed with a plurality of device regions 7a. Prepare 7.

After that, the chip mounting shown in FIG. 10 for mounting the semiconductor chip 1 on the device region 7a of the multi-piece substrate 7 is performed.

That is, a plurality of pads 1a are formed on the main surface 1b.
A plurality of semiconductor chips 1 having the above are arranged on each device region 7a of the multi-piece substrate 7, and as shown in FIG. 2, the back surface 1c of the semiconductor chip 1 and the die-bonding material 5 applied to each device region 7a. To join.

Subsequently, wire bonding shown in FIG. 11 is performed.

At this time, the pads 1a of the semiconductor chip 1 and the corresponding connection terminals 2c of each package substrate 2 on the multi-piece substrate 7 are wire-bonded by a bonding wire 4 such as a gold wire to electrically connect them. Connecting.

Thereafter, as shown in FIG. 12, the multi-piece substrate 7 is cleaned.

Here, mainly the main surface 2a of the package substrate 2 of the multi-piece substrate 7 is cleaned by plasma cleaning (plasma etching).

At this time, the multi-piece substrate 7 that has been wire-bonded is placed in the chamber 20, and plasma cleaning is performed using, for example, Ar gas.

After that, as shown in FIG. 13, resin molding is performed by the upper mold 21a and the lower mold 21b of the mold 21.

The upper die 21a of the molding die 21 (or the lower die 21b may be covered) collectively covers the plurality of semiconductor chips 1 mounted in the plurality of device regions 7a of the multi-cavity substrate 7. A large cavity 21c is formed.

Therefore, as shown in FIG. 13, between the upper die 21a and the lower die 21b of the molding die 21, the multi-piece substrate 7 on which the semiconductor chips 1 are mounted in the respective device regions 7a is provided. After setting and covering a plurality of device regions 7a collectively by one cavity 21c, the multi-cavity substrate 7 is clamped by the upper mold 21a and the lower mold 21b.

Subsequently, in this state, a sealing resin is supplied to the cavity 21c to collectively mold the plurality of semiconductor chips 1, bonding wires 4 and the like.

As the sealing resin, for example, an epoxy thermosetting resin or the like is used.

As a result, the collective mold portion 8 shown in FIG. 8 that integrally covers the plurality of semiconductor chips 1 is formed.

After that, as shown in FIG. 14, the solder bumps 3 are mounted.

Here, the back surface 2b side of the package substrate 2 in the multi-cavity substrate 7 faces upward, and the ball mounting jig 22 holding the plurality of solder bumps 3 by vacuum suction is arranged above it. Solder bump electrodes are formed on the plurality of bump lands 2e on the back surface 2b of each package substrate 2 from above the multi-piece substrate 7.

At that time, the solder bumps 3 are attached to the respective bump lands 2e by being melted by, for example, infrared reflow.

The solder bumps 3 may be attached before the dicing after the collective molding,
Alternatively, it may be performed after dicing.

Then, as shown in FIG. 15, the solder bumps 3 are washed.

Thereafter, as shown in FIG. 16, dicing is performed using the cutting blade 10 of the dicing device 11 (see FIG. 3).

Here, the collective molding portion 8 formed by resin sealing and the multi-cavity substrate 7 are divided into individual device regions 7a by using the blade 10 shown in FIGS. 4 and 5. .

The blade 10 of the dicing machine 11 shown in FIG. 3 includes a resin portion such as the base material 2h of the multi-piece substrate 7 and another resin portion which is a sealing resin forming the collective molding portion 8, It is made of a material having two different characteristics corresponding to both the wiring 2d of the multi-cavity substrate 7.

That is, the blade 10 includes a resin corresponding layer 10a corresponding to a resin material such as a sealing resin and a base material 2h of the multi-piece substrate 7 and a wiring corresponding layer 10b corresponding to a metal material such as a wiring 2d. For example, it has a three-layer structure in which the wiring corresponding layer 10b is arranged in the center portion in the thickness direction and the resin corresponding layer 10a is arranged on both sides thereof.

At the time of dicing the multi-cavity substrate 7, as shown in FIG. 3, first, the batch molding section 8 formed on the multi-cavity substrate 7 is formed on the dicing sheet 15 attached to the support plate 13. The front surface (ceiling surface) side is fixed, this is arranged on the stage 12 of the dicing device 11, and the blade 10 is inserted from the external terminal mounting surface side of the multi-piece substrate 7 to perform dicing.

Incidentally, FIG. 7 shows the traveling locus 14 of the blade 10 on the multi-piece substrate 7, of which the two-dot chain line part is the idle feed traveling 16 which is not cut.
Is shown.

Further, FIG. 7 shows a case where first, the multi-cavity substrate 7 is cut in a direction parallel to the longitudinal direction, and then the multi-cavity substrate 7 is cut in the width direction.

Further, as shown in FIG. 8, in the dicing method here, cutting is performed so that the relationship between the rotating direction of the blade 10 and the multi-piece substrate 7 is always a down-cut method.

However, the running locus 14 of the blade 10 shown in FIG. 7 is not limited to this, and further, in the cutting order of the multi-piece substrate 7 in the longitudinal direction and the width direction, either one is performed first. Good.

The down-cut method is not limited to this, and the upper-cut method, which has the opposite relationship to the down-cut method, may be used.
The down-cut method and the upper-cut method may be combined.

When the blade 10 has a diameter of 3 inches, the rotational speed and the running speed of the blade 10 at the time of cutting are 20000 rpm and the running speed is about 100 mm / sec. The processing conditions of can be variously changed depending on the thickness and material of the workpiece (for example, the thickness and material of the multi-cavity substrate 7 and the thickness and material of the collective molding portion 8) or the size of the blade 10. It is something.

As described above, the multi-cavity substrate 7 is cut into the device regions 7a by the blade 10 and the BGA 9 shown in FIGS. 1 and 17 can be manufactured.

In the method of manufacturing the semiconductor device (BGA 9) of the present embodiment, when dicing a substrate having a plurality of different materials in the dicing step after the collective molding,
By cutting with the blade 10 made of a plurality of materials having different characteristics corresponding to each material, the cutting can be performed in a state suitable for each different material.

Therefore, the quality of the processed surface cut by the blade 10 can be improved.

That is, it is possible to prevent cutting burrs and chipping from occurring on the surface of the substrate to be processed, and as a result,
It is possible to stabilize the quality of the surface to be processed and bring it into a good state.

For example, as in this embodiment, the substrate has a resin portion such as the base material 2h and the wiring 2d made of copper.
And a multi-cavity substrate 7 having a plurality of multi-cavity substrates 7 and a collective molding portion 8 which is another resin portion made of a sealing resin. It is possible to prevent cutting burrs such as copper from protruding.

Further, since it is possible to cut the multi-piece substrate 7 in a state suitable for each different material, it is necessary to limit the processing conditions during dicing such as the life of the blade 10 (cutting tool) and the cutting speed. Instead, the multi-piece substrate 7 can be processed.

As a result, the workability of dicing after collective molding can be improved.

Further, in order to cut the multi-cavity substrate 7 and the batch molding part 8 by using the blade 10 in a state suitable for each different material of the multi-cavity substrate 7 including the batch molding part 8, the blade 10 is cut. The life can be improved.

Although the invention made by the present inventor has been specifically described based on the embodiment of the invention, the invention is not limited to the embodiment of the invention, and does not depart from the gist of the invention. It goes without saying that various changes can be made with.

For example, the cleaning step of the multi-cavity substrate 7 after wire bonding described in the above embodiment may be a method other than plasma cleaning, or may not be necessarily performed.

Further, in the above embodiment, the blade 10
Although the blade 10 has a three-layer structure, the blade 10 may have a structure of two or more layers made of materials having characteristics corresponding to the materials of the members forming the workpiece such as the multi-cavity substrate 7. However, the number of layers is not particularly limited.

Further, in the above-described embodiment, the case where the semiconductor device is the BGA 9 has been described. However, if the semiconductor device is assembled by cutting using the blade 10 having a multi-layer structure during dicing, LGA (La
Other semiconductor devices such as a nd grid array) may be used.

Further, in the above embodiment, the case where the substrate to be diced by the blade 10 is the multi-cavity substrate 7 which is the wiring substrate has been described. However, the substrate is a semiconductor having a test pattern formed in the dicing area. It may be a substrate (semiconductor wafer).

That is, using a blade 10 made of a member having a characteristic corresponding to a semiconductor substrate having silicon and wiring 2d such as aluminum,
It is also possible to perform dicing (individualization) of the semiconductor substrate in the dicing step of obtaining the semiconductor chip 1.

[0101]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

When cutting a substrate having a plurality of different materials, a blade made of a plurality of materials having different characteristics corresponding to each material is used.
The quality of the surface to be processed can be improved and the quality of the semiconductor device can be improved.

[Brief description of drawings]

FIG. 1 is an external perspective view showing an example of the structure of a BGA assembled by a semiconductor device manufacturing method according to an embodiment of the present invention.

2 is a cross-sectional view showing the structure of the BGA shown in FIG.

FIG. 3 is a structural conceptual diagram showing an example of a basic structure of a main part of a dicing device used in the method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a perspective view showing an example of a structure of a blade provided in the dicing device shown in FIG.

5 is a partially enlarged perspective view showing a structure of a portion A shown in FIG.

6 is a cross-sectional view showing an example of a substrate cut state by the blade shown in FIG.

7 is a plan view showing an example of a locus of movement of a blade in a dicing process after collective molding in assembling the BGA shown in FIG. 1. FIG.

FIG. 8 is a side view showing an example of the movement trajectory of the blade shown in FIG.

9 is a cross-sectional view showing an example of the structure of the substrate at the start of assembly of the BGA shown in FIG.

10 is a cross-sectional view showing an example of a structure of a substrate at the time of die bonding in assembling the BGA shown in FIG.

11 is a cross-sectional view showing an example of the structure of the substrate at the time of wire bonding in the assembly of the BGA shown in FIG.

12 is a cross-sectional view showing an example of the structure of the substrate at the time of cleaning the substrate in the assembly of the BGA shown in FIG.

13 is a partial cross-sectional view showing an example of the structure of the substrate at the time of collective molding in assembling the BGA shown in FIG.

FIG. 14 is a cross-sectional view showing an example of the structure of a substrate when balls are mounted in the assembly of the BGA shown in FIG.

15 is a cross-sectional view showing an example of the structure of a substrate at the time of cleaning balls in assembling the BGA shown in FIG.

16 is a cross-sectional view showing an example of a structure of a substrate at the time of dicing in assembling the BGA shown in FIG.

17 is a perspective view showing an example of a structure of a BGA diced into individual pieces by the dicing shown in FIG.

[Explanation of symbols]

1 semiconductor chip 1a Pad (surface electrode) 1b Main surface 1c back side 2 Package substrate 2a Main surface 2b back side 2c connection terminal (terminal) 2d wiring (wiring part) 2e Bump Land 2f beer hall 2g solder resist 2h Base material (resin part) 3 Solder bump 4 Bonding wire 5 Die bond material 6 resin encapsulation 7 Multi-piece board (wiring board) 7a Device area 7b Dicing line 8 Collective molding part (collective sealing part) 9 BGA (semiconductor device) 10 blades 10a Resin compatible layer 10b Wiring layer 11 Dicing equipment 12 stages 13 Support plate 14 Running locus 15 Dicing sheet 16 Jump feed 20 chambers 21 Mold 21a Upper mold 21b Lower mold 21c cavity 22 ball mounting jig

Claims (5)

[Claims] 1. A method of manufacturing a semiconductor device assembled by using substrates having a plurality of different materials, wherein the substrate is formed by a cutting blade made of a plurality of materials having different characteristics corresponding to the respective materials. A method of manufacturing a semiconductor device, comprising: 2. A method of manufacturing a semiconductor device assembled by using substrates having a plurality of different materials, the step of preparing a wiring substrate which is a substrate having a resin portion and a metal wiring portion; And a wiring part corresponding to both the wiring part and the wiring part, respectively, and a step of cutting the wiring board by a cutting blade made of a material having different characteristics. 3. A method of manufacturing a semiconductor device assembled by using substrates having a plurality of different materials, the step of preparing a wiring substrate having a resin portion and a metal wiring portion, and the resin. Section and the wiring section respectively corresponding to each of the two different characteristics and a step of cutting the wiring board by a cutting blade made of a material having different characteristics, the characteristics of the material forming the blade is A method of manufacturing a semiconductor device, which is characterized by being determined by a material, an abrasive grain size, an abrasive grain density, and a brittleness of an abrasive grain holding material. 4. A method of manufacturing a semiconductor device, which is assembled using substrates having a plurality of different materials, wherein the substrate has a resin portion and a metal wiring portion and a plurality of device regions are formed. A step of preparing a wiring board; a step of mounting a semiconductor chip on a device region of the wiring board; a step of connecting a surface electrode of the semiconductor chip and a terminal of the wiring board corresponding thereto; A step of collectively covering the plurality of device regions of the wiring board with a cavity; and a step of supplying a sealing resin to the cavity with the plurality of device regions covered with the cavity at the same time to seal the semiconductor chip with a resin. The step of stopping, the collective sealing part, which is another resin part formed by the resin sealing, and the wiring board, the resin part or the other part. Of the semiconductor device, using a cutting blade made of a material having two different characteristics corresponding to both the resin portion and the wiring portion, respectively. Production method. 5. A dicing device provided with blades for cutting substrates having a plurality of different materials, the blade having cutting blades made of a plurality of materials having different characteristics corresponding to the respective materials. A dicing device characterized by the above.