JP2003174051A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a simple and highly reliable semiconductor device where the loading of a solder bump for outer electrode is not required. <P>SOLUTION: A semiconductor element 3 is bonded to the center of a side where the conductor pattern 4 of a substrate 1 is formed. An aluminum bonding pad 6 formed on the surface of the semiconductor element 3, and a gold-plated bonding pad 5 on a conductor pattern 4-side are connected by ball-bonded metal wire 7. The substrate is set in upper/lower molds 9 and 10, where the semiconductor device is generated. The whole face of a side where the semiconductor element 3 is loaded is resin-sealed by sealing resin 8. Sealing pressure at the time of sealing resin is made strong enough to project the conductor pattern 4 to a through hole 2 side. The conductor pattern 4 is depressed to the through hole 2 side, and the prescribed quantity of it is projected at the time of sealing resin. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly to a semiconductor device having a chip size package structure and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art As electronic equipment becomes smaller and lighter, semiconductor device packages are required to be thinner and smaller and lighter. CSP (Chip Size Package) is a generic name for packages that are the same size as or slightly larger than the size of a semiconductor chip. It can be made smaller and lighter, and because the internal wiring length can be shortened, signal delay and noise can be reduced. It has been put to practical use as a package structure that can reduce such problems. Although there are various methods of manufacturing a semiconductor device having such a chip size package structure, after cutting a semiconductor chip from a semiconductor wafer, the semiconductor chip is mounted on a wiring board that is the same size as or slightly larger than the semiconductor chip. Generally, resin sealing is performed in this state.

FIG. 6 shows a cross-sectional structure of a semiconductor device having a conventional chip size package structure.
As shown in FIG. 6, a through hole 2 is formed in the substrate 1 at a position where a solder bump 12 to be an external connection terminal is formed, and a conductor pattern 4 made of a copper (Cu) foil is formed on the surface of the substrate 1. Is formed, and a bonding pad 5 plated with gold (Au) is formed on the surface thereof. Then, the semiconductor element 3 is adhered to the central portion of the substrate on the side where the conductor pattern 4 is formed, and the aluminum (Al) bonding pad 6 formed on the surface of the semiconductor element 3 and the gold-plated bonding pad form a ball. It is connected by a bonded gold (Au) wire 7.

Further, on the substrate on which the semiconductor element 3 is mounted, the sealing resin 8 for protecting the semiconductor element 3, the gold wire 7, their joints, the conductor pattern 4, etc., over the entire surface. It is resin-sealed. Further, solder bumps 12 are formed in the substrate openings (through holes) formed on the opposite side. This solder bump 1
2 applies flux to the conductor surface at the bottom of the substrate opening,
It is formed by mounting a solder ball on it and heating the whole, melting the solder ball and joining it to the conductor surface of the bottom surface of the substrate opening.

[0005]

However, in the semiconductor device having the conventional chip size package structure as described above, the solder bump for external connection is indispensable, and the step for forming the solder bump is necessary. Therefore, the semiconductor manufacturing process has been complicated. Also,
Since the semiconductor device is reheated after the molding process of the sealing resin 8 in order to melt the solder balls, a defective product may be generated due to the heating process.

The present invention has been proposed in order to solve the above-mentioned problems of the prior art, and an object thereof is to eliminate the mounting of solder bumps for external electrodes and to provide a simple and reliable structure. An object of the present invention is to provide a high semiconductor device and a method of manufacturing a semiconductor device.

[0007]

In order to achieve the above object, the invention according to claim 1 is such that a conductor pattern electrically connected to the semiconductor element is formed on a surface of a substrate on which the semiconductor element is arranged. In the semiconductor device in which the semiconductor element and the conductor pattern are resin-sealed, a through hole is formed in the substrate, and a part of the conductive pattern is formed in the through hole by the pressure during molding of the sealing resin. It is characterized by protruding to the back side of.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the protrusion amount of the conductor pattern is
The thickness is equal to the thickness of the substrate.
According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the protrusion amount of the conductor pattern is equal to or larger than the thickness of the substrate. According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the conductor pattern protruding toward the back side of the substrate constitutes an external terminal for external connection. It is characterized by that.

According to the first to fourth aspects of the present invention having the above-mentioned structure, the conductor pattern on the through hole for external connection is projected to the back side of the substrate, thereby eliminating the solder bump. It can be used directly as an external connection terminal.

According to a fifth aspect of the present invention, a conductor pattern that is electrically coupled to a semiconductor element is formed on the surface of a substrate having a through hole, and the semiconductor element is installed at a predetermined position on the substrate. At the same time, in the method of manufacturing a semiconductor device in which the semiconductor element and the conductor pattern are resin-sealed, the conductor pattern located on the through hole is projected to the back surface side of the substrate by the stress of resin sealing. .

According to the invention of claim 5 having the above-mentioned structure, since the conductor pattern formed on the substrate can be used as the external connection terminal, the conventional solder bump for external connection can be used. Is unnecessary, and the process for forming the solder bumps is not required, so that the semiconductor manufacturing process is greatly simplified. Further, since it is not necessary to reheat the semiconductor device after the molding process of the sealing resin to melt the solder balls, it is possible to prevent defective products due to the heating process.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device according to the fifth aspect, a predetermined amount of the conductor pattern located on the through hole is provided on the back surface side of the substrate before resin sealing. It is characterized in that it is projected. According to the invention of claim 6 having the above-mentioned configuration, the amount of protrusion of the conductor pattern to the back side of the substrate is further increased by performing a simple process of protruding the conductor pattern by a predetermined amount in advance. Therefore, it is possible to obtain a semiconductor device which is more convenient as an external electrode.

According to a seventh aspect of the present invention, a semiconductor pattern in which a conductor pattern electrically connected to the semiconductor element is formed on a surface of a substrate on which the semiconductor element is arranged, and the semiconductor element and the conductor pattern are resin-sealed. In the device, a through hole is formed in the substrate, a conductor pattern is formed on the back surface of the substrate so as to close the through hole, and the substrate back surface and the conductor pattern on the substrate surface are electrically connected, It is characterized in that a part of the conductive pattern on the back surface of the substrate facing the through hole projects to the back surface side of the substrate due to the pressure during molding of the sealing resin. The invention of claim 8 is characterized in that, in the invention of claim 7, the conductor pattern projecting to the back surface side of the substrate constitutes an external terminal for external connection. Claim 7 and Claim 8 which have the above composition.
According to the invention, since a part of the conductor pattern formed on the back side of the substrate projects from the back side of the substrate, it can be used as it is as a terminal for external connection. In particular, the amount of protrusion from the substrate surface can be increased by using the conductor pattern on the back surface side.

According to a ninth aspect of the present invention, a conductor pattern electrically coupled to the semiconductor element is formed on the surface of the substrate having the through hole, and the semiconductor element is installed at a predetermined position on the substrate, In a method of manufacturing a semiconductor device in which a semiconductor element and a conductor pattern are resin-sealed, a through hole is formed in the substrate, and a conductor pattern is formed on a back surface of the substrate so as to close the through hole, and a back surface of the substrate is formed. The conductive pattern on the surface of the substrate is electrically connected, and a part of the conductive pattern on the back surface of the substrate facing the through hole is projected to the back surface side of the substrate by the pressure during molding of the sealing resin. To do. According to the invention of claim 9 having the above-mentioned configuration, the difficult work of protruding the conductor pattern from the back surface of the substrate can be easily performed by utilizing the pressure at the time of resin sealing.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention (hereinafter referred to as embodiments) will be specifically described below with reference to the drawings. The same members as those of the conventional type shown in FIG. 6 are designated by the same reference numerals and the description thereof will be omitted.

(1) First Embodiment FIG. 1 shows a sectional structure of a semiconductor device according to the present invention. In FIG. 1, a semiconductor element 3 arranged on a substrate 1 made of, for example, a polyimide resin is adhered to the substrate 1 with silver paste or the like, and the aluminum bonding pad 6 on the semiconductor element 3 side and the conductor pattern 4 side are attached. The gold-plated bonding pad 5 is electrically connected by a gold wire 7.

The entire surface on one side of the substrate 1 on which the semiconductor element 3 is mounted is sealed with a sealing resin 8 in order to protect the semiconductor element 3 and the gold wire 7. In addition, on the surface of the substrate 1, a conductor pattern 4 formed of copper wiring, respectively.
Are formed by plating or adhesion. A through hole 2 is formed at a position where the external electrode is formed on the substrate 1, and a part of the conductor pattern 4 on the substrate surface is larger than the opening area of the hole so as to close the through hole 2. It curves and projects toward the inside of the through hole 2, and the tip of the projecting portion is exposed near the back surface of the substrate 1. That is, the portion of the conductor pattern 4 facing the through hole 2 is deformed toward the inside of the through hole 2 by the pressure during the compression molding of the sealing resin 8 and protrudes to the back side of the substrate 1.

The semiconductor device of this embodiment having such a structure is manufactured as follows. First, FIG.
As shown in (a), the semiconductor element 3 is adhered to the central portion of the side of the substrate 1 on which the conductor pattern 4 is formed by silver paste or the like, and the aluminum pad 6 formed on the surface of the semiconductor element 3 and the conductor pattern. The gold-plated bonding pad 5 on the 4 side is a ball-bonded gold wire 7
Is connected with. Subsequently, this substrate is set in upper and lower molds 9 and 10 for producing a semiconductor device, and the entire surface on the side on which the semiconductor element 3 is mounted is covered with the semiconductor element 3, the gold wire 7, their joints and the conductor pattern 4. Sealing resin 8 to protect
Resin sealing.

In this case, the sealing pressure at the time of resin sealing is set to a pressure necessary and sufficient to cause the conductor pattern 4 made of copper foil to project to the side of the through hole 2. As a result, as shown in FIG. 2B, the conductor pattern 4 formed on the substrate is pressed toward the through hole 2 and protrudes at the same time as the resin sealing, so that the exposed portion of the tip is externally connected. It can be used as a terminal.

As described above, according to this embodiment, since the conductor pattern 4 formed on the substrate can be used as the external connection terminal, the conventional solder bump for external connection is unnecessary. As a result, the process for forming the solder bumps is not required, and the semiconductor manufacturing process is greatly simplified. Further, since it is not necessary to reheat the semiconductor device after molding the sealing resin 8 in order to melt the solder balls, it is possible to prevent defective products from being generated due to the heating process.

(2) Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. The present embodiment is a modified example of the first embodiment, and as shown in FIG. 3, the protrusion amount of the conductor pattern 4 to the back side of the substrate 1 is a lower mold installed on the back side of the substrate. It is configured to project outside the height of the contact surface with the mold 20.

The semiconductor device of this embodiment having such a structure is manufactured as follows. First, in the present embodiment, as shown in FIG. 3, an elastic body 11 having a predetermined thickness is provided on the surface of the lower mold 20 of the upper and lower molds 9 and 20 for manufacturing the semiconductor device. Has been done. Then, the substrate 1 on which the semiconductor element 3 is arranged on the side on which the conductor pattern 4 is formed is set in the upper and lower molds 9 and 20, and the entire one side on which the semiconductor element 3 is mounted is resin-sealed with the sealing resin 8. To do.

In this case, the sealing pressure at the time of resin sealing is set to a pressure sufficient for projecting the conductor pattern 4 made of copper foil, so that the through hole 2 portion is positioned at the time of resin sealing. The conductor pattern 4 is pressed toward the back surface side of the substrate 1, and the elastic body 11 provided on the surface of the lower mold 20 is further pressed.
Can also be pressed to cause the conductor pattern 4 to project to the back side of the substrate beyond the thickness of the substrate. As a result, it is possible to form a semiconductor device that is more convenient to use as an external electrode simultaneously with resin sealing.

As described above, according to this embodiment, the first
Not only the same operation and effect as in the first embodiment can be obtained, but also the protrusion amount of the conductor pattern 4 to the back surface side of the substrate 1 is in contact with the mold 20 installed outside the substrate as compared with the first embodiment. Since it can be configured to project outward from the surface height, it is possible to manufacture a semiconductor device that is more convenient as an external electrode.

(3) Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. This embodiment is a modification of the first embodiment, and as shown in FIG. 4A, the conductor pattern 4 is previously formed in the through hole 2 before resin sealing with the sealing resin 8. The through hole 2 is formed by a punch 13 or the like having a corresponding predetermined diameter.
It is pressed to the side and projected to the back side of the substrate.

The semiconductor device of this embodiment having such a structure is manufactured as follows. First, in the present embodiment, as shown in FIG. 4A, the conductor pattern 4 is pressed toward the through hole 2 side by using the punch 13 or the like so as to protrude toward the back surface side of the substrate, and then, As shown in FIG. 4B, the gold-plated bonding pad 5 on the conductor pattern 4 side and the aluminum bonding pad 6 formed on the surface of the semiconductor element 3 are connected by a gold wire 7.
Thereafter, as shown in FIG. 4C, the entire one side on which the semiconductor element 3 is mounted is resin-sealed with the sealing resin 8.

Then, the sealing pressure at the time of resin sealing is set to a pressure necessary and sufficient for causing the conductor pattern 4 made of copper foil to protrude, so that the conductor pattern 4 already protruding toward the back side of the substrate is further increased. Since the conductor patterns are pressed in the same direction, it is possible to easily make the conductor pattern protrude more than the thickness of the substrate. As a result, it is possible to form a semiconductor device that is more convenient to use as an external electrode simultaneously with resin sealing.

As described above, according to this embodiment, the first
Not only the same operation and effect as in the embodiment can be obtained, but the amount of protrusion of the conductor pattern 4 to the back side of the substrate 1 can be increased by performing a simple process of protruding the conductor pattern 4 by a predetermined amount in advance. Since the size can be made larger than that of the first embodiment, it is possible to manufacture a semiconductor device which is more convenient as an external electrode.

(4) Fourth Embodiment A fourth embodiment of the present invention will be described with reference to FIG. In this embodiment, the conductor pattern 4 formed on the back side of the substrate 1 is projected by the pressure during compression molding. That is, in the present embodiment, as shown in FIG. 5, conductor patterns 4a and 4b formed of copper wiring are formed by plating or bonding on the front surface and the back surface of the substrate 1 made of, for example, a polyimide resin. The patterns 4a and 4b are electrically connected to each other by penetrating the substrate 1 at predetermined portions. Further, a through hole 2 is formed at the position where the external electrode is formed on the substrate 1, and the conductor pattern 4b on the back surface side of the substrate is larger than the opening area of the hole so as to close the through hole 2.

The semiconductor element 3 arranged on the substrate 1 is adhered to the substrate 1 by silver paste or the like, and the bonding pad of the semiconductor element 3 and the conductor pattern 4a on the substrate surface side are gold wires 7. It is electrically connected. The entire surface on one side of the substrate 1 on which the semiconductor element 3 is mounted is sealed with a sealing resin 8 in order to protect the semiconductor element 3 and the gold wire 7. The sealing resin 8 is injected into the conductor pattern 4b on the back side of the substrate from the portion of the through hole 2 formed in the substrate 1, and the conductor pattern 4b is curved from the back surface of the substrate 1 due to the pressure at the time of the injection. And is protruding.

In order to manufacture the semiconductor element 3 of this embodiment having such a configuration, the semiconductor element 3 is placed on the substrate 1 on which the conductor patterns 4 are formed on both the front surface and the back surface, as in the above-described embodiments. After being fixed and wire-bonded, it is set in a mold for compression molding, and the whole is sealed with a sealing resin 8. At that time, one part of the sealing resin 8 is pressed by the pressure during molding. The portion enters the through hole 2 and presses the conductor pattern 4b arranged on the back side of the substrate 1 from the inside. As a result, the conductor pattern 4b is deformed by this pressing force and protrudes from the back surface of the substrate 1.
In this case, since the conductor pattern 4b protrudes from the back surface of the substrate 1, as a mold for resin encapsulation, a relief recess is provided in accordance with the protruding position of the conductor pattern 4b or the above-described embodiment is used. As described in the form, it is preferable to dispose an elastic body (for example, a fluororesin having heat resistance and elasticity) on the inner surface of the mold.

As described above, according to the present embodiment, the external electrode can be projected from the back surface of the substrate by utilizing a part of the conductor pattern, so that the solder fillet is formed when the semiconductor device is mounted, Reliability during mounting is improved. In addition, the external electrode is directly attached to the mounting board.
The thermal stress at the time of reflow can be relaxed as compared with the GA type semiconductor device. In particular, in the present embodiment, the conductor pattern is arranged on the back side of the substrate, and the conductor pattern is projected from the back side of the substrate by the pressure of the sealing resin. Therefore, a large amount of protrusion can be obtained with a small amount of deformation of the conductor pattern. In addition, there is an advantage that even if the conductor pattern is thin, there is no fear of cracks during deformation.

(5) Other Embodiments The present invention is not limited to the above-mentioned embodiments, and solder bumps are formed on the protruding portions of the electrodes formed by the methods shown in the above-mentioned respective embodiments, and external electrodes are formed. It is also possible to Further, among the upper and lower molds for forming the semiconductor device, a recess having a predetermined size and depth is provided on the surface of the lower mold to correspond to the through hole formed in the substrate, and the conductor pattern 4 is formed. The protrusion may be configured so as to protrude toward the back surface of the substrate.

[0034]

As described above, according to the present invention, it is possible to provide a simple and highly reliable semiconductor device and a method of manufacturing a semiconductor device, which does not require mounting of solder bumps for external electrodes. .

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a first embodiment of a semiconductor device according to the present invention.

2A and 2B are cross-sectional views showing a manufacturing process of the semiconductor device shown in FIG. 1, in which FIG. 2A is before resin sealing and FIG. 2B is after resin sealing.

FIG. 3 is a sectional view showing a configuration of a second embodiment of a semiconductor device according to the present invention.

FIG. 4 is a cross-sectional view showing a manufacturing process of a third embodiment of a semiconductor device according to the present invention, where (a) is before pressing a conductor pattern, (b) is before resin sealing, and (c) is resin. Shown after sealing.

FIG. 5 is a sectional view showing a configuration of a fourth embodiment of a semiconductor device according to the present invention.

FIG. 6 is a cross-sectional view showing the configuration of a conventional semiconductor device.

[Explanation of symbols]

1 ... Substrate 2 ... Through hole 3 ... Semiconductor element 4 ... Conductor pattern 5 ... Bonding pad on conductor pattern side 6 ... Bonding pad on the semiconductor element side 7 ... Gold wire 8 ... Sealing resin 9 ... Upper mold 10 ... Lower mold 11 ... Elastic body 12 ... Solder bump 13 ... Punch

Claims (9)

[Claims] 1. A semiconductor device in which a conductor pattern electrically connected to the semiconductor element is formed on a surface of a substrate on which a semiconductor element is arranged, and the semiconductor element and the conductor pattern are resin-sealed, wherein the substrate The semiconductor device is characterized in that a through hole is formed in the through hole, and a part of the conductive pattern is projected in the through hole to the back surface side of the substrate due to the pressure at the time of molding the sealing resin. 2. The semiconductor device according to claim 1, wherein the protrusion amount of the conductor pattern is equal to the thickness of the substrate. 3. The semiconductor device according to claim 1, wherein the protrusion amount of the conductor pattern is equal to or larger than the thickness of the substrate. 4. The semiconductor device according to claim 1, wherein the conductor pattern protruding toward the back surface of the substrate constitutes an external terminal for external connection. 5. A conductor pattern electrically coupled to a semiconductor element is formed on the surface of a substrate having a through hole, the semiconductor element is installed at a predetermined position on the substrate, and the semiconductor element and the conductor are connected to each other. A method of manufacturing a semiconductor device in which a pattern is resin-sealed, wherein a conductor pattern located on the through hole is projected to the back surface side of the substrate by a stress of resin sealing. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the conductor pattern located on the through hole is made to protrude by a predetermined amount on the back surface side of the substrate before resin sealing. . 7. A semiconductor device in which a conductor pattern electrically connected to the semiconductor element is formed on a surface of a substrate on which a semiconductor element is arranged, and the semiconductor element and the conductor pattern are resin-sealed, wherein the substrate A through hole is formed in the through hole, and a conductor pattern is formed on the back surface of the substrate so as to close the through hole. The back surface of the substrate and the conductor pattern on the substrate surface are electrically connected to each other, and the through hole is opposed to the through hole. A semiconductor device, wherein a part of the conductive pattern on the back surface of the substrate protrudes to the back surface side of the substrate due to the pressure at the time of molding the sealing resin. 8. The semiconductor device according to claim 7, wherein the conductor pattern protruding toward the back side of the substrate constitutes an external terminal for external connection. 9. A conductor pattern electrically coupled to a semiconductor element is formed on a surface of a substrate having a through hole, the semiconductor element is installed at a predetermined position on the substrate, and the semiconductor element and the conductor are connected to each other. In a method of manufacturing a semiconductor device in which a pattern is resin-sealed, a through hole is formed in the substrate and a conductor pattern is formed on a back surface of the substrate so as to close the through hole, and a conductor on the back surface of the substrate and a conductor on the front surface of the substrate. Manufacture of a semiconductor device characterized in that a part of the conductive pattern on the back surface of the substrate facing the through hole is electrically connected to the pattern and is projected to the back surface side of the substrate by the pressure at the time of molding the sealing resin. Method.