JP2003173967A5 - - Google Patents

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Publication number
JP2003173967A5
JP2003173967A5 JP2002071367A JP2002071367A JP2003173967A5 JP 2003173967 A5 JP2003173967 A5 JP 2003173967A5 JP 2002071367 A JP2002071367 A JP 2002071367A JP 2002071367 A JP2002071367 A JP 2002071367A JP 2003173967 A5 JP2003173967 A5 JP 2003173967A5
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JP
Japan
Prior art keywords
semiconductor film
manufacturing
semiconductor device
semiconductor
metal element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002071367A
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English (en)
Japanese (ja)
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JP4176362B2 (ja
JP2003173967A (ja
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Publication date
Application filed filed Critical
Priority to JP2002071367A priority Critical patent/JP4176362B2/ja
Priority claimed from JP2002071367A external-priority patent/JP4176362B2/ja
Publication of JP2003173967A publication Critical patent/JP2003173967A/ja
Publication of JP2003173967A5 publication Critical patent/JP2003173967A5/ja
Application granted granted Critical
Publication of JP4176362B2 publication Critical patent/JP4176362B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002071367A 2001-03-16 2002-03-15 半導体装置の作製方法 Expired - Fee Related JP4176362B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002071367A JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001-75141 2001-03-16
JP2001075141 2001-03-16
JP2001-301276 2001-09-28
JP2001301276 2001-09-28
JP2002071367A JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003173967A JP2003173967A (ja) 2003-06-20
JP2003173967A5 true JP2003173967A5 (cg-RX-API-DMAC10.html) 2005-08-11
JP4176362B2 JP4176362B2 (ja) 2008-11-05

Family

ID=27346262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002071367A Expired - Fee Related JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Country Status (1)

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JP (1) JP4176362B2 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371333B2 (en) * 2005-06-07 2008-05-13 Micron Technology, Inc. Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
KR100994236B1 (ko) * 2009-05-22 2010-11-12 노코드 주식회사 다결정 실리콘 박막의 제조방법
US9842738B2 (en) 2014-04-09 2017-12-12 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP7208779B2 (ja) 2018-12-11 2023-01-19 キオクシア株式会社 基板処理装置
JP2020144252A (ja) 2019-03-07 2020-09-10 セイコーエプソン株式会社 電気光学装置、電子機器、および電気光学装置の製造方法

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