JP2003171480A - Fluorine resin substrate - Google Patents

Fluorine resin substrate

Info

Publication number
JP2003171480A
JP2003171480A JP2001373100A JP2001373100A JP2003171480A JP 2003171480 A JP2003171480 A JP 2003171480A JP 2001373100 A JP2001373100 A JP 2001373100A JP 2001373100 A JP2001373100 A JP 2001373100A JP 2003171480 A JP2003171480 A JP 2003171480A
Authority
JP
Japan
Prior art keywords
loss tangent
dielectric loss
fluorine resin
substrate
ghz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001373100A
Other languages
Japanese (ja)
Other versions
JP3614396B2 (en
Inventor
Satoru Hashimoto
哲 橋本
Hitoshi Kanzaki
仁 神崎
Masanobu Hiramoto
雅信 平本
Yasuhiko Ichino
靖彦 市野
Toshimitsu Tanii
利光 谷井
Kakuji Onishi
格司 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Pillar Packing Co Ltd
Original Assignee
Nippon Pillar Packing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Pillar Packing Co Ltd filed Critical Nippon Pillar Packing Co Ltd
Priority to JP2001373100A priority Critical patent/JP3614396B2/en
Publication of JP2003171480A publication Critical patent/JP2003171480A/en
Application granted granted Critical
Publication of JP3614396B2 publication Critical patent/JP3614396B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fluorine resin substrate exhibiting suppression of an elevation of dielectric tangent to the elevation of a frequency band. <P>SOLUTION: This fluorine resin substrate is characterized by using a prepreg 4 as an insulation material 2 to make ≤10 elevation ratio of dielectric tangent at 75 GHz to that at 1 GHz by impregnating 60-95 wt.% fluorine resin to an aramide fiber sheet material. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、高周波帯域用のプ
リント回路やアンテナ等に用いられるふっ素樹脂基板に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluororesin substrate used for high frequency printed circuits, antennas and the like.

【0002】[0002]

【従来の技術】GHz帯域の高周波帯域の周波数の用途
としては、表1に示すものがあり、表1に掲げるもの以
外にも、ミリメートル波レーダを用いた自動車の衝突防
止システムなどでは、70GHz以上になると予想され
る。
2. Description of the Related Art As applications of frequencies in the high frequency band of GHz band, there are those shown in Table 1. In addition to those listed in Table 1, automobile collision prevention systems using millimeter wave radar have a frequency of 70 GHz or more. Is expected to become.

【0003】[0003]

【表1】 [Table 1]

【0004】上記のような高周波帯域用のプリント回路
やアンテナに使用される基板にあっては、通信速度を速
くするため低誘電率であること、及び通信損失を低くす
るために低誘電正接であることが求められる。下記表2
は、従来の基板の誘電特性を示している。
The substrate used for the printed circuit or antenna for the high frequency band as described above has a low dielectric constant in order to increase the communication speed, and a low dielectric loss tangent in order to reduce the communication loss. It is required to be. Table 2 below
Shows the dielectric properties of a conventional substrate.

【0005】[0005]

【表2】 [Table 2]

【0006】表2の3つの基板の中で、GHz帯域での
使用に適している基板は「ガラス繊維クロス/ふっ素樹
脂基板」である。このガラス繊維クロス/ふっ素樹脂基
板は、1MHzの測定で低誘電率(2.2〜3.0)・
低誘電正接(0.0001〜0.001)を実現してい
る。
Among the three substrates shown in Table 2, the one suitable for use in the GHz band is "glass fiber cloth / fluorine resin substrate". This glass fiber cloth / fluorine resin substrate has a low dielectric constant (2.2-3.0) at 1MHz measurement.
A low dielectric loss tangent (0.0001 to 0.001) is realized.

【0007】[0007]

【発明が解決しようとする課題】しかし、ガラス繊維ク
ロス/ふっ素樹脂基板では、高周波数帯域、特にミリメ
ートル波帯域(30GHz〜300GHz)では、誘電
正接が増大し、通信損失が大きくなるという問題があ
る。すなわち、高周波帯域に用いる基板としては、誘電
率及び誘電正接が単に低いだけでなく、周波数が上昇し
ても誘電正接が高くならないものが求められる。しか
し、従来のガラス繊維クロス/ふっ素樹脂基板では、周
波数帯域が上昇すると誘電正接が高くなり、波形が劣化
し通信損失が増大するという欠点あった。しかも、ミリ
メートル波帯域における今後の用途の広がりに対応する
には、かかる欠点の克服は重要である。
However, the glass fiber cloth / fluorine resin substrate has a problem that the dielectric loss tangent increases and the communication loss increases in the high frequency band, particularly in the millimeter wave band (30 GHz to 300 GHz). . That is, a substrate used in a high frequency band is required to have not only a low dielectric constant and a low dielectric loss tangent but also a high dielectric loss tangent even when the frequency is increased. However, the conventional glass fiber cloth / fluorine resin substrate has a drawback that the dielectric loss tangent increases as the frequency band rises, the waveform deteriorates, and the communication loss increases. Moreover, it is important to overcome such drawbacks in order to cope with future expansion of applications in the millimeter wave band.

【0008】本発明はかかる問題に鑑みてなされたもの
であり、周波数帯域の上昇に対する誘電正接の上昇が抑
制されたふっ素樹脂基板を提供することを目的とする。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a fluororesin substrate in which an increase in dielectric loss tangent with respect to an increase in frequency band is suppressed.

【0009】[0009]

【課題を解決するための手段】前記目的を達成するため
本発明は、次の技術的手段を採用した。すなわち、本発
明は、アラミド繊維シート材にふっ素樹脂が含浸されて
なるプリプレグを絶縁材として用いたことを特徴とする
ふっ素樹脂基板である。アラミド繊維シート材は誘電正
接がそれほど低くないが、誘電率及び誘電正接の低いふ
っ素樹脂を含浸させることで、高周波帯域用として十分
に低い誘電率及び誘電正接が得られる。しかも、ふっ素
樹脂をアラミド繊維に含浸させると、周波数帯域が上昇
しても誘電正接はさほど上昇しないことを本発明者らは
見いだした。これは、アラミドのポリマー分子は双極子
性が小さいことに加えて、曲がりにくい分子(剛直性分
子)で構成されており、分子が剛直であることから、G
Hz以上では分子の運動は電解の変化に追従できなくな
り、誘電正接の変化がさほど発生しないためであると考
えられる。
In order to achieve the above object, the present invention adopts the following technical means. That is, the present invention is a fluororesin substrate characterized by using a prepreg obtained by impregnating an aramid fiber sheet material with a fluororesin as an insulating material. The aramid fiber sheet material has a not so low dielectric loss tangent, but by impregnating a fluorocarbon resin having a low dielectric constant and dielectric loss tangent, a sufficiently low dielectric constant and dielectric loss tangent for a high frequency band can be obtained. Moreover, the present inventors have found that when the aramid fiber is impregnated with the fluororesin, the dielectric loss tangent does not increase so much even if the frequency band increases. This is because the polymer molecule of aramid has a small dipole property and is composed of a molecule that is difficult to bend (rigid molecule), and the molecule is rigid.
It is considered that the movement of molecules cannot follow the change of electrolysis at Hz or higher, and the change of the dielectric loss tangent does not occur so much.

【0010】なお、ふっ素樹脂としては、例えば、ポリ
テトラフルオロエチレン(PTFE)、テトラフルオロ
エチレン−パーフルオロアルキルビニルエーテル共重合
体(PFA)、テトラフルオロエチレン−パーフルオロ
アルコキシエチレン共重合体(PFE)、テトラフルオ
ロエチレン−ヘキサフルオロプロピレン共重合体(FE
P)、テトラフルオロエチレン−エチレン共重合体(E
TFE)などを用いることができる。
Examples of the fluorine resin include polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-perfluoroalkoxyethylene copolymer (PFE), Tetrafluoroethylene-hexafluoropropylene copolymer (FE
P), tetrafluoroethylene-ethylene copolymer (E
TFE) or the like can be used.

【0011】また、ふっ素樹脂の含有率としては、60
重量%〜95重量%であるのが好ましい。ふっ素樹脂が
95重量%より多いと、ふっ素樹脂の含有率が多すぎて
基板の強度が十分でなくなり、ふっ素樹脂が60重量%
より少ないと誘電率及び誘電正接が高くなるからであ
る。また、1GHzにおける誘電正接に対する75GH
zにおける誘電正接の上昇比が10以下であるのが好ま
しく、上昇比が10以下であれば、高周波帯域用として
も十分に低い誘電正接となる。
Further, the content of the fluorine resin is 60
It is preferable that it is from 95% by weight to 95% by weight. If the content of fluororesin is more than 95% by weight, the content of fluororesin is too high and the strength of the substrate becomes insufficient.
This is because if it is smaller, the dielectric constant and the dielectric loss tangent become higher. Also, 75 GHz with respect to the dielectric loss tangent at 1 GHz
The increase ratio of the dielectric loss tangent in z is preferably 10 or less, and when the increase ratio is 10 or less, the dielectric loss tangent is sufficiently low even for a high frequency band.

【0012】[0012]

【発明の実施の形態】図1は、本発明の実施形態におけ
るふっ素樹脂基板1の基本構成を示す断面図である。基
板1は、絶縁層2と導電体層3とを備えており、絶縁層
2を構成する絶縁材としてアラミド繊維シート材にふっ
素樹脂を含浸させたプリプレグ4が用いられ、この絶縁
層2の上下両面に導電体層3として銅箔が形成されてい
る。なお、絶縁層2としてはプリプレグ4を2枚積層し
たものが図示されているが、積層数は何層でもよい。
1 is a sectional view showing the basic structure of a fluororesin substrate 1 according to an embodiment of the present invention. The substrate 1 is provided with an insulating layer 2 and a conductor layer 3, and a prepreg 4 obtained by impregnating an aramid fiber sheet material with a fluororesin is used as an insulating material forming the insulating layer 2. Copper foil is formed as the conductor layer 3 on both surfaces. Although the insulating layer 2 is shown as a stack of two prepregs 4, the number of stacked layers may be any number.

【0013】[0013]

【実施例】実施例として、アラミド繊維の不織布(アラ
ミド繊維ペーパー:デュポン帝人アドバンスドペーパ社
製THERMOUNT#80坪量56g/m)に、P
TFE(三井・デュポンフロロケミカル社製PTFEデ
ィスパージョン34J)を含浸したプリプレグの上下面
に銅箔(福田金属箔粉工業社製18μm銅箔CFT9L
P)を配し熱プレス成形(成型プレス条件は385℃、
5MPa、60min)することによって、アラミド繊
維ペーパー補強/ふっ素樹脂基板1を作成した。実施例
におけるふっ素樹脂の含浸率としては、95重量%のも
の(実施例1)、80重量%のもの(実施例2)、60
重量%のもの(実施例3)の三種類の基板を作成した。
EXAMPLE As an example, an aramid fiber non-woven fabric (aramid fiber paper: Dupont Teijin Advanced Paper Co. THERMOUNT # 80 basis weight 56 g / m 2 ) was coated with P
Copper foil (18 μm copper foil CFT9L manufactured by Fukuda Metal Foil & Powder Co., Ltd.) on the upper and lower surfaces of prepreg impregnated with TFE (PTFE dispersion 34J manufactured by Mitsui DuPont Fluorochemical Co., Ltd.)
P) and heat press molding (molding press conditions are 385 ° C,
The aramid fiber paper reinforcing / fluorine resin substrate 1 was prepared by applying 5 MPa and 60 min). The impregnation rate of the fluororesin in the examples is 95% by weight (Example 1), 80% by weight (Example 2), 60.
Three types of substrates with weight% (Example 3) were prepared.

【0014】また、比較例として、ガラス繊維クロス
(有沢製作所社製#108ガラスクロス坪量48g/m
)にPTFE(三井・デュポンフロロケミカル社製P
TFEディスパージョン34J)を含浸したプリプレグ
の上下面に銅箔(福田金属箔粉工業社製18μm銅箔C
FT9LP)を配し熱プレス成形(成型プレス条件は実
施例と同様)することによって、ガラス繊維クロス補強
/ふっ素樹脂基板を作成した。比較例におけるふっ素樹
脂の含浸率としては、実施例と同様に、95重量%のも
の(比較例1)、80重量%のもの(比較例2)、60
重量%のもの(比較例3)の三種類の基板を作成した。
As a comparative example, glass fiber cloth (Arisawa Seisakusho # 108 glass cloth basis weight 48 g / m 2)
2 ) PTFE (Mitsui / Dupont Fluorochemicals P
Copper foil (18 μm copper foil C manufactured by Fukuda Metal Foil & Powder Co., Ltd.) on the upper and lower surfaces of the prepreg impregnated with TFE dispersion 34J)
FT9LP) was placed and subjected to hot press molding (molding press conditions were the same as in the example) to prepare a glass fiber cloth reinforced / fluorine resin substrate. The impregnation rate of the fluorine resin in the comparative example was 95% by weight (Comparative Example 1), 80% by weight (Comparative Example 2), and 60 as in the case of the Examples.
Three types of substrates with a weight percentage (Comparative Example 3) were prepared.

【0015】なお、下記表3に示すように、実施例1の
基板はプリプレグ枚数が2枚であって銅箔を含む基板厚
さが1.10mmであり、実施例2の基板はプリプレグ
枚数が4枚であって銅箔を含む基板厚さが0.61mm
であり、実施例3の基板はプリプレグ枚数が6枚であっ
て銅箔を含む基板厚さが0.51mmである。また、比
較例1の基板はプリプレグ枚数が3枚であって銅箔を含
む基板厚さが1.12mmであり、比較例2の基板はプ
リプレグ枚数が6枚であって銅箔を含む基板厚さが0.
62mmであり、比較例3の基板はプリプレグ枚数が9
枚であって銅箔を含む基板厚さが0.50mmである。
As shown in Table 3 below, the substrate of Example 1 has two prepregs and the thickness of the substrate including the copper foil is 1.10 mm, and the substrate of Example 2 has prepreg numbers. The thickness of the board is 0.61mm including 4 sheets of copper foil
In the substrate of Example 3, the number of prepregs is 6 and the thickness of the substrate including the copper foil is 0.51 mm. In addition, the board of Comparative Example 1 has three prepregs and the board thickness including the copper foil is 1.12 mm, and the board of Comparative Example 2 has six prepregs and the board thickness including the copper foil. Is 0.
The substrate of Comparative Example 3 has a prepreg count of 9 mm.
The thickness of the substrate including the copper foil is 0.50 mm.

【0016】[0016]

【表3】 [Table 3]

【0017】実施例1〜3及び比較例1〜3の誘電特性
を測定した結果を表4及び図2に示す。測定方法は摂動
方であり、測定機器はアジレトテクノロジー社製ベクト
ルネットワークアナライザーHP−8720を用いた。
The results of measuring the dielectric properties of Examples 1 to 3 and Comparative Examples 1 to 3 are shown in Table 4 and FIG. The measuring method was a perturbation method, and the measuring instrument used was a vector network analyzer HP-8720 manufactured by Azilet Technology.

【0018】[0018]

【表4】 [Table 4]

【0019】表4に示すように、1GHz程度の周波数
では、実施例1〜3及び比較例1〜3ともに低誘電率及
び低誘電正接を達成している。しかし、表4の誘電正接
の値をグラフ化した図2からも明らかなように、比較例
1〜3では、周波数帯域が上昇すると誘電正接が増大し
ており、特にミリメートル波帯域付近になると誘電正接
の顕著な増加が見られる。すなわち、比較例1では測定
周波数1GHzにおける誘電正接(0.0001)に対
する測定周波数75GHzにおける誘電正接(0.00
5)の上昇比が50であり、比較例2では同上昇比が約
21であり、比較例3では同上昇比が40であり、比較
例1〜3では、いずれも上昇比が非常に大きい。したが
って、比較例1〜3の基板を高周波帯域用、特にミリメ
ートル波帯域用に用いると通信損失が増大するなどの弊
害が生じる。
As shown in Table 4, at frequencies of about 1 GHz, Examples 1 to 3 and Comparative Examples 1 to 3 achieved low dielectric constant and low dielectric loss tangent. However, as is clear from FIG. 2 in which the values of the dielectric loss tangent in Table 4 are graphed, in Comparative Examples 1 to 3, the dielectric loss tangent increases as the frequency band rises, and in particular near the millimeter wave band, the dielectric loss tangent increases. There is a significant increase in tangent. That is, in Comparative Example 1, the dielectric loss tangent (0.0001) at the measurement frequency of 1 GHz and the dielectric loss tangent (0.00
The increase ratio of 5) is 50, the increase ratio of Comparative Example 2 is about 21, the increase ratio of Comparative Example 3 is 40, and the increase ratios of Comparative Examples 1 to 3 are very large. . Therefore, when the substrates of Comparative Examples 1 to 3 are used for the high frequency band, especially for the millimeter wave band, there arises an adverse effect such as an increase in communication loss.

【0020】一方、実施例1〜3では、周波数帯域が上
昇しても、比較例1〜3に比べて誘電正接の増大は緩や
かである。すなわち、実施例1では前記上昇比が9.8
であり、実施例2では前記上昇比が4であり、実施例3
では前記上昇比が5であり、実施例では上昇比がいずれ
も10以下であり比較例に比べて小さい。しかも、実施
例と比較例においてふっ素樹脂含浸率が同じもの(実施
例1と比較例1、実施例2と比較例2、実施例3と比較
例3)を比較すると、実施例におけるミリメートル波帯
域における誘電正接は比較例に比べて非常に小さい。し
たがって、実施例1〜3の基板を高周波帯域用に用いれ
ば通信損失を低く抑えることができ、特にミリメートル
波帯域用として非常に有益である。
On the other hand, in Examples 1 to 3, even if the frequency band increased, the increase in the dielectric loss tangent was slower than in Comparative Examples 1 to 3. That is, in Example 1, the increase ratio is 9.8.
In Example 2, the increase ratio is 4, and in Example 3,
The rise ratio is 5 and in the examples, the rise ratios are all 10 or less, which is smaller than that of the comparative example. Moreover, when the examples and the comparative examples have the same fluorine resin impregnation rate (example 1 and comparative example 1, example 2 and comparative example 2, and example 3 and comparative example 3), the millimeter wave band in the example is compared. The dielectric loss tangent in is extremely smaller than that in the comparative example. Therefore, when the substrates of Examples 1 to 3 are used for the high frequency band, the communication loss can be suppressed to a low level, which is very useful especially for the millimeter wave band.

【0021】また、実施例の場合、PTFEとアラミド
繊維が均質に分散されているため、レーザ穴あけ加工
性、プラズマ表面処理製が優れるのに対し、比較例の場
合は、平織ガラスクロスを用いているためガラス分の多
い部分とPTFE分の多い部分が混在するため、ガラス
分の多い部分はレーザ穴あけ加工性が悪く、PTFE分
の多い部分はプラズマ表面処理製が悪い。
In the case of the example, since the PTFE and the aramid fiber are uniformly dispersed, the laser drilling processability and the plasma surface treatment are excellent, whereas in the case of the comparative example, the plain weave glass cloth is used. Since the glass-rich portion and the PTFE-rich portion coexist, the laser-drillability is poor in the glass-rich portion and the plasma surface treatment is poor in the PTFE-rich portion.

【0022】[0022]

【発明の効果】本発明によれば、アラミド繊維シート材
にふっ素樹脂を含浸させることで、周波数帯域の上昇に
対する誘電正接の上昇が抑制されたふっ素樹脂基板を得
ることができる。また、ふっ素樹脂の含有率を60重量
%〜95重量%とすると、基板の強度を十分に確保でき
るとともに、高周波帯域に適した低誘電率及び低誘電正
接とすることができる。しかも、1GHzにおける誘電
正接に対する75GHzにおける誘電正接の上昇比が1
0以下であれば、高周波帯域用としても十分に低い誘電
正接となる。
According to the present invention, by impregnating the aramid fiber sheet material with the fluororesin, it is possible to obtain the fluororesin substrate in which the increase of the dielectric loss tangent with respect to the increase of the frequency band is suppressed. When the content of the fluorine resin is 60% by weight to 95% by weight, the strength of the substrate can be sufficiently secured, and the low dielectric constant and low dielectric loss tangent suitable for the high frequency band can be obtained. Moreover, the increase ratio of the dielectric loss tangent at 75 GHz to the dielectric loss tangent at 1 GHz is 1
If it is 0 or less, the dielectric loss tangent is sufficiently low even for a high frequency band.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の基板の基本構成を示す断面図である。FIG. 1 is a sectional view showing a basic structure of a substrate of the present invention.

【図2】実施例と比較例の誘電正接を示すグラフであ
る。
FIG. 2 is a graph showing dielectric loss tangents of Examples and Comparative Examples.

【符号の説明】[Explanation of symbols]

1 基板 2 絶縁層(絶縁材) 3 導電体層 4 プリプレグ 1 substrate 2 Insulation layer (insulation material) 3 Conductor layer 4 prepreg

───────────────────────────────────────────────────── フロントページの続き (72)発明者 平本 雅信 兵庫県三田市下内神字打場541番地の1 日本ピラー工業株式会社三田工場内 (72)発明者 市野 靖彦 兵庫県三田市下内神字打場541番地の1 日本ピラー工業株式会社三田工場内 (72)発明者 谷井 利光 兵庫県三田市下内神字打場541番地の1 日本ピラー工業株式会社三田工場内 (72)発明者 大西 格司 兵庫県三田市下内神字打場541番地の1 日本ピラー工業株式会社三田工場内 Fターム(参考) 4F072 AA02 AA08 AB06 AD07 AG03 AH22 AL13    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Masanobu Hiramoto             1 of 541, Shimouchi Kamibata, Sanda City, Hyogo Prefecture             Japan Pillar Industry Co., Ltd. Mita factory (72) Inventor Yasuhiko Ichino             1 of 541, Shimouchi Kamibata, Sanda City, Hyogo Prefecture             Japan Pillar Industry Co., Ltd. Mita factory (72) Inventor Toshimitsu Tanii             1 of 541, Shimouchi Kamibata, Sanda City, Hyogo Prefecture             Japan Pillar Industry Co., Ltd. Mita factory (72) Inventor Koji Onishi             1 of 541, Shimouchi Kamibata, Sanda City, Hyogo Prefecture             Japan Pillar Industry Co., Ltd. Mita factory F-term (reference) 4F072 AA02 AA08 AB06 AD07 AG03                       AH22 AL13

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】アラミド繊維シート材にふっ素樹脂が含浸
されてなるプリプレグを絶縁材として用いたことを特徴
とするふっ素樹脂基板。
1. A fluororesin substrate comprising a prepreg obtained by impregnating an aramid fiber sheet material with a fluororesin as an insulating material.
【請求項2】ふっ素樹脂含有率が60重量%〜95重量
%であることを特徴とする請求項1記載のふっ素樹脂基
板。
2. The fluororesin substrate according to claim 1, wherein the fluororesin content is 60% by weight to 95% by weight.
【請求項3】 1GHzにおける誘電正接に対する75
GHzにおける誘電正接の上昇比が10以下であること
を特徴とする請求項1又は2記載のふっ素樹脂基板。
3. 75 to the dielectric loss tangent at 1 GHz
3. The fluororesin substrate according to claim 1, wherein the increase ratio of the dielectric loss tangent at GHz is 10 or less.
JP2001373100A 2001-12-06 2001-12-06 Method of using fluororesin substrate for millimeter wave band communication and fluororesin substrate for millimeter wave band communication Expired - Fee Related JP3614396B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001373100A JP3614396B2 (en) 2001-12-06 2001-12-06 Method of using fluororesin substrate for millimeter wave band communication and fluororesin substrate for millimeter wave band communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001373100A JP3614396B2 (en) 2001-12-06 2001-12-06 Method of using fluororesin substrate for millimeter wave band communication and fluororesin substrate for millimeter wave band communication

Publications (2)

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JP2003171480A true JP2003171480A (en) 2003-06-20
JP3614396B2 JP3614396B2 (en) 2005-01-26

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JP2005332994A (en) * 2004-05-20 2005-12-02 Kyocera Corp Method and apparatus for evaluating characteristic of radio wave absorber
JP2006059865A (en) * 2004-08-17 2006-03-02 Unitika Ltd Substrate and its manufacturing method
JP2010199437A (en) * 2009-02-26 2010-09-09 Kuraray Co Ltd Laminated board for printed wiring board
JP2012237015A (en) * 2012-08-28 2012-12-06 Japan Vilene Co Ltd Composite sheet
US8431955B2 (en) 2010-07-21 2013-04-30 International Business Machines Corporation Method and structure for balancing power and performance using fluorine and nitrogen doped substrates
JP2015008286A (en) * 2013-05-31 2015-01-15 住友電気工業株式会社 Printed wiring board for high frequency use
CN105393647A (en) * 2013-05-31 2016-03-09 住友电气工业株式会社 High-frequency printed circuit board and wiring material
US11745482B2 (en) 2019-10-29 2023-09-05 Resonac Corporation Fluororesin substrate laminate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005332994A (en) * 2004-05-20 2005-12-02 Kyocera Corp Method and apparatus for evaluating characteristic of radio wave absorber
JP2006059865A (en) * 2004-08-17 2006-03-02 Unitika Ltd Substrate and its manufacturing method
JP2010199437A (en) * 2009-02-26 2010-09-09 Kuraray Co Ltd Laminated board for printed wiring board
US8431955B2 (en) 2010-07-21 2013-04-30 International Business Machines Corporation Method and structure for balancing power and performance using fluorine and nitrogen doped substrates
JP2012237015A (en) * 2012-08-28 2012-12-06 Japan Vilene Co Ltd Composite sheet
JP2015008286A (en) * 2013-05-31 2015-01-15 住友電気工業株式会社 Printed wiring board for high frequency use
CN105393647A (en) * 2013-05-31 2016-03-09 住友电气工业株式会社 High-frequency printed circuit board and wiring material
US10383215B2 (en) 2013-05-31 2019-08-13 Sumitomo Electric Industries, Ltd. Radio-frequency printed circuit board and wiring material
US11745482B2 (en) 2019-10-29 2023-09-05 Resonac Corporation Fluororesin substrate laminate

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