JP2003165058A - Polishing compact and polishing surface plate using the same - Google Patents

Polishing compact and polishing surface plate using the same

Info

Publication number
JP2003165058A
JP2003165058A JP2001363271A JP2001363271A JP2003165058A JP 2003165058 A JP2003165058 A JP 2003165058A JP 2001363271 A JP2001363271 A JP 2001363271A JP 2001363271 A JP2001363271 A JP 2001363271A JP 2003165058 A JP2003165058 A JP 2003165058A
Authority
JP
Japan
Prior art keywords
polishing
compact
stabilizer
molded article
zirconia
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001363271A
Other languages
Japanese (ja)
Inventor
Toshihito Kuramochi
豪人 倉持
Shuji Takato
修二 高東
Satoru Kondo
知 近藤
Masayuki Kudo
正行 工藤
Yuko Yokomizo
祐幸 横溝
Mutsumi Asano
睦己 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Quartz Corp
Tosoh Corp
Original Assignee
Tosoh Quartz Corp
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Quartz Corp, Tosoh Corp filed Critical Tosoh Quartz Corp
Priority to JP2001363271A priority Critical patent/JP2003165058A/en
Publication of JP2003165058A publication Critical patent/JP2003165058A/en
Pending legal-status Critical Current

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Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing compact and a polishing surface plate using the same, applicable mainly to the pre-finish process (lapping) of substrate materials or optical materials and capable of achieving a prescribed precision level in their surfaces at higher speeds and with stability. <P>SOLUTION: The polishing compact and the polishing surface plate using the same mainly comprise a zirconia compact containing alumina and a stabilizer and has an abrasive part 2 that polishes and a non-abrasive part 3, and there are specified rates between area and porosity in the parts 2, 3. In the part 2, 60% or more of the inorganic grains are 5 μm or less in diameter, 60% or more of the alumina grains are 5 μm or less in diameter, and 60% or more of the stabilizer-containing zirconia grains are 5 μm or less in diameter. A equation 0.25≤X/(X+Y)≤0.95 holds, where the rate of the area of the alumina grains is X and that of the stabilizer-containing zirconia grains is Y. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、シリコンウエハ、
酸化物単結晶基板、化合物半導体基板、各種ガラス基
板、石英ガラス基板、セラミックス基板等の基板材料や
光学材料などを研磨する加工プロセス、特にラッピング
工程に好適な研磨用成形体及びそれを用いた研磨用定盤
に関するものである。
TECHNICAL FIELD The present invention relates to a silicon wafer,
Processing process for polishing substrate material such as oxide single crystal substrate, compound semiconductor substrate, various glass substrates, quartz glass substrate, ceramics substrate and optical materials, especially a molded body for polishing suitable for lapping step and polishing using the same It is related to the surface plate.

【0002】[0002]

【従来の技術】光学、エレクトロニクスなどの産業の進
展に伴い、磁気ディスク、半導体基板、単結晶材料、光
学材料等の加工に対する要求は非常に厳しくなってきて
いる中、仕上げ工程前の加工(ラッピング工程)では材
料の表面に遊離砥粒を含有した研磨液を連続的に流しな
がらラッピング定盤上で加工されていた。この際に使用
される遊離砥粒としては、酸化アルミニウム、酸化鉄、
酸化クロム、酸化ジルコニウム、炭化ケイ素、ダイヤモ
ンドなどが知られている。また、ラッピング定盤として
は黒鉛鋳鉄定盤が一般に用いられてきた。しかしなが
ら、従来の方法によりラッピング加工を行うと、ラッピ
ングに用いる砥粒が、研磨される材料(以下、「被研磨
材料」という。)の表面に突き刺さってしまい局所的に
ピットが発生することがあり、さらに、生産性を確保す
るために粒径の大きい砥粒を使用するために被研磨材料
の仕上がり面(ラッピング面)もそれに対応した最大粗
さになってしまうという課題があった。また、このよう
な課題の対策として粒径の小さい砥粒を用いると、生産
性が低下するという課題も生じていた。
2. Description of the Related Art With the progress of industries such as optics and electronics, the demands for processing magnetic disks, semiconductor substrates, single crystal materials, optical materials, etc. have become extremely strict. In the process), the surface of the material was processed on a lapping platen while continuously flowing a polishing liquid containing free abrasive grains. As loose abrasive grains used at this time, aluminum oxide, iron oxide,
Chromium oxide, zirconium oxide, silicon carbide, diamond and the like are known. A graphite cast iron platen has been generally used as a lapping platen. However, when the lapping process is performed by the conventional method, the abrasive grains used for the lapping may stick into the surface of the material to be polished (hereinafter referred to as “material to be polished”), and pits may locally occur. Further, there is a problem that the finished surface (lapping surface) of the material to be polished has a maximum roughness corresponding to it because the abrasive grains having a large particle size are used to secure the productivity. Further, when abrasive grains having a small particle size are used as a countermeasure against such a problem, there is a problem that productivity is lowered.

【0003】このような課題に対し、例えば特開200
0−42903号公報では、砥粒を含有する研磨液を用
いる被研磨材料のラッピング加工方法において、砥粒径
を小さい側に変えて2段階でラッピング加工する方法が
提案されている。しかしながら、この方法によると例え
ば同一の装置で行う場合は、2種類の径を有する砥粒を
使い分けることになり、その装置管理が非常に煩雑にな
り、また2つの装置を用いると装置間での移動が生じ
る、すなわち工程管理が煩雑になるという課題があっ
た。
To address such a problem, for example, Japanese Patent Laid-Open No. 200
Japanese Patent Laid-Open No. 0-42903 proposes a method of lapping a material to be polished using a polishing liquid containing abrasive grains, in which the abrasive grain size is changed to a smaller side and lapping is performed in two steps. However, according to this method, when the same apparatus is used, for example, the abrasive grains having two kinds of diameters are used properly, which makes management of the apparatus very complicated. There is a problem in that movement occurs, that is, process management becomes complicated.

【0004】一方、黒鉛鋳鉄定盤は、高硬度であるため
ラッピング定盤として用いられてきている。しかしなが
ら、この定盤を用いてラッピング加工した場合には、十
分に安定して加工することが困難となっており、このた
め、例えば特開2000−52238号公報に開示され
ているように、定盤中に分布する黒鉛の粒径や存在密度
を制御することでその性能を安定化させることが試みら
れている。しかしながら、装置管理、工程管理等の作業
性の観点を考慮すれば、加工性能は一層向上かつ安定化
させた方が好ましいのは言うまでもない。
On the other hand, the graphite cast iron platen has been used as a lapping platen because of its high hardness. However, when lapping is performed using this surface plate, it is difficult to perform the processing sufficiently stably. Therefore, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-52238, Attempts have been made to stabilize the performance by controlling the particle size and the existing density of graphite distributed in the board. However, it is needless to say that it is preferable to further improve and stabilize the processing performance in view of workability such as device management and process management.

【0005】また、特開平11−239962号公報で
は、ラッピング定盤として高硬度材料から構成されるも
のが好ましく、黒鉛鋳鉄やセラミックス材料、天然石材
料が例示されている。中でも、セラミックス材料や天然
石材料は伸びが小さく、また熱膨張係数が小さいという
特徴を有し、黒鉛鋳鉄に比して、酸系の研磨液に対して
耐食性が優れていることが記載されている。しかしなが
ら、このようなセラミックス材料や天然石材料の微構造
についてはふれておらず、また、具体的なラッピング加
工における性能についての開示はない。
Further, in Japanese Laid-Open Patent Publication No. 11-239962, it is preferable that the lapping platen is made of a high hardness material, and graphite cast iron, ceramics material and natural stone material are exemplified. Among them, ceramic materials and natural stone materials are characterized by low elongation and a small coefficient of thermal expansion, and it is described that they have excellent corrosion resistance to acid-based polishing liquids as compared with graphite cast iron. . However, no mention has been made of the microstructure of such ceramic materials and natural stone materials, and there is no disclosure of specific performance in lapping.

【0006】一方、本発明者らは、セラミックス等の無
機粒子から構成される研磨用成形体を、無機粒子の素
材、研磨用成形体全体の構造、表面構造という見地から
種々提案し、被研磨材料表面を高精度に高効率で仕上げ
ることが可能であることを示してきており、その後この
ような研磨用成形体がラッピング加工に具体的に適用で
きるかについても検討を加えてきた。
On the other hand, the inventors of the present invention have proposed various types of polishing compacts composed of inorganic particles such as ceramics from the viewpoints of the material of the inorganic particles, the structure of the entire polishing compact, and the surface structure. It has been shown that it is possible to finish the material surface with high accuracy and high efficiency, and thereafter, we have also examined whether or not such an abrasive compact can be applied to lapping.

【0007】[0007]

【発明が解決しようとする課題】このように本発明者ら
は各種被研磨材料に対し、特に仕上げ工程に対し好適な
研磨用成形体を見い出してきたが、仕上げ工程の前工
程、すなわちラッピング工程での研磨の一層の高効率化
による生産性の向上が望まれており、さらに、このよう
な研磨特性を安定させる必要があった。さらにこのよう
な研磨用成形体を構成する無機粒子に対する研磨性能以
外の要件として、当該研磨用成形体の使用に際しての取
り扱いの容易性に加え、その原料の取り扱いが容易であ
ること、製造工程が煩雑でないこと、製造コストが比較
的安価であることなども重要となってくるため、このよ
うなことを満たす研磨用成形体が望まれていた。
As described above, the present inventors have found a molded article for polishing suitable for various materials to be polished, particularly for the finishing step. However, the pre-step of the finishing step, that is, the lapping step. It has been desired to improve productivity by further increasing the efficiency of polishing, and it is necessary to stabilize such polishing characteristics. Furthermore, as a requirement other than the polishing performance for the inorganic particles constituting such a polishing molded body, in addition to the ease of handling when using the polishing molded body, the handling of the raw material is easy, the manufacturing process is Since it is also important that it is not complicated and that the manufacturing cost is relatively low, there has been a demand for a molded article for polishing that satisfies these requirements.

【0008】本発明は、このような課題に鑑みてなされ
たものであり、その目的は半導体基板、酸化物単結晶基
板、各種ガラス基板、石英ガラス基板、セラミックス基
板等の基板材料や精密加工を要する光学材料などの仕上
げ前工程(ラッピング工程)に主として適用でき、所定
の表面精度に被研磨材料表面を一層高速ででき、このよ
うな特性が安定している、さらに前記課題を解決し得る
研磨用成形体及びそれを用いた研磨用定盤を提供するこ
とにある。
The present invention has been made in view of the above problems, and its purpose is to provide a substrate material such as a semiconductor substrate, an oxide single crystal substrate, various glass substrates, a quartz glass substrate, and a ceramic substrate, and precision processing. Applicable mainly to the pre-finishing process (lapping process) of required optical materials, etc., the surface of the material to be polished can be further speeded up to a predetermined surface accuracy, and such characteristics are stable, and further polishing that can solve the above problems The object is to provide a molded product for polishing and a polishing platen using the molded product.

【0009】[0009]

【課題を解決するための手段】本発明者らは前記課題を
解決するために鋭意検討を重ねた結果、実質的に無機粒
子のみからなる研磨用成形体を被研磨材料のラッピング
工程へと適用させるにあたり、研磨用成形体全体の構造
のみならず、研磨用成形体の被研磨材料との研磨に携わ
る面(以下、「研磨面」という。)が仕上げ工程に用い
られる場合とは異なる微構造を有することで、各種被研
磨材料に対して所定の表面精度に一層高速ででき、ま
た、その微構造、すなわち研磨面の特性が加工中におい
ても一定範囲に保たれていることで、その性能を長期に
安定化させることができ、特に遊離砥粒を用いた研磨に
おいては、研磨中の砥粒連続使用における経時的変化を
生じてもその変化に対応して研磨速度の低下を抑制する
ために研磨用成形体の研磨に携わる面の中の摺擦部分を
構成する無機粒子の粒子径が特定の条件を満たす場合、
さらに非摺擦部分の細孔径が特定の条件を満たすと前記
課題を解決して研磨作業を一層効率化できることを見出
し、本発明を完成するに至った。すなわち、研磨用成形
体及び/又は被研磨材料を摺擦させて被研磨材料を研磨
加工プロセスにおいて、研磨用成形体と被研磨材料とが
直接接触して摺擦する部分(以下、「摺擦部分」とい
う。)と、研磨加工において被研磨材料と直接接触する
ことはなく、主に研磨加工において用いられる研磨液を
滞留あるいは流通させて摺擦部分へ研磨液を供給すると
見られる部分(以下、「非摺擦部分」という。)とが研
磨用成形体の研磨面側に少なくとも存在し、その構造が
特定の構造となっていると共に、研磨加工の際にその構
造が保持され、さらに摺擦部分の無機粒子径が特定の条
件を満たしていること、さらには非摺擦部分の細孔径が
特定の条件を満たしていることが極めて重要であること
を見い出したのである。
As a result of intensive studies to solve the above-mentioned problems, the present inventors applied a molded article for polishing consisting essentially of inorganic particles to a lapping step of a material to be polished. In doing so, not only the structure of the entire polishing compact but also a microstructure different from the case where the surface of the polishing compact that is involved in polishing with the material to be polished (hereinafter referred to as "polishing surface") is used in the finishing process. By having a certain surface accuracy for various materials to be polished at a higher speed, and because its microstructure, that is, the characteristics of the polished surface is maintained in a certain range even during processing, its performance is improved. Can be stabilized for a long period of time, and in particular, in polishing with loose abrasive grains, even if a change over time occurs in continuous use of abrasive grains during polishing, in order to suppress the decrease in polishing rate corresponding to the change Molded body for polishing When the particle diameter of the inorganic particles constituting the rubbing portion in the surface involved in polishing certain conditions,
Further, they have found that if the pore diameter of the non-rubbing portion satisfies a specific condition, the above problems can be solved and the polishing work can be made more efficient, and the present invention has been completed. That is, in the polishing process of rubbing the polishing compact and / or the material to be polished, the polishing compact and the material to be polished are in direct contact with each other and rubbed against each other (hereinafter, referred to as “sliding friction”). "Part") and a part which is not directly in contact with the material to be polished in the polishing process and is considered to supply the polishing liquid to the rubbing part by allowing the polishing liquid mainly used in the polishing process to stay or flow. , "Non-rubbing part") exists at least on the polishing surface side of the molded article for polishing, and the structure has a specific structure. They have found that it is extremely important that the inorganic particle size of the rubbing part satisfies a specific condition, and that the pore size of the non-rubbing part satisfies a specific condition.

【0010】以下、本発明を詳細に説明する。The present invention will be described in detail below.

【0011】<研磨用成形体の特性>本発明の研磨用成
形体は、無機粒子からなる研磨用成形体であって、前記
研磨用成形体の研磨に携わる面に摺擦部分と非摺擦部分
とを有し、前記摺擦部分に存在する細孔が1μm以下の
径からなると共にその面積が摺擦部分の全面積の15%
未満であり、さらに非摺擦部分の面積が研磨に携わる面
の全面積に対して20%以上60%以下である研磨用成
形体において、当該無機粒子がアルミナと安定化剤を含
有するジルコニアから主としてなり、当該研磨用成形体
の摺擦部分を構成する無機粒子の粒子径の60%以上が
5μm以下である研磨用成形体であり、かつアルミナ粒
子の粒子径の60%以上が5μm以下、安定化剤を含有
するジルコニア粒子の粒子径の60%以上が5μm以下
であり、当該研磨用成形体を構成するアルミナ粒子の面
積割合をX、安定化剤を含有するジルコニア粒子の面積
割合をYとしたときに、0.25≦X/(X+Y)≦
0.95である。
<Characteristics of Polishing Molded Article> The polishing molded article of the present invention is a polishing molded article composed of inorganic particles, and the surface of the above-mentioned polishing molded article which is involved in polishing is not rubbed with a rubbing portion. And the pores present in the rubbing portion have a diameter of 1 μm or less and the area thereof is 15% of the total area of the rubbing portion.
And a non-rubbed area of 20% or more and 60% or less of the total area of the surface involved in polishing, wherein the inorganic particles are zirconia containing alumina and a stabilizer. The polishing molded body is mainly composed of 60% or more of the particle diameter of the inorganic particles constituting the rubbing portion of the polishing molded body is 5 μm or less, and 60% or more of the particle diameter of the alumina particles is 5 μm or less, 60% or more of the particle size of the zirconia particles containing the stabilizer is 5 μm or less, the area ratio of the alumina particles forming the polishing compact is X, and the area ratio of the zirconia particles containing the stabilizer is Y. And 0.25 ≦ X / (X + Y) ≦
It is 0.95.

【0012】本発明の研磨用成形体に用いられる無機粒
子は、被研磨材料との適合性を考慮して適宜選択される
ものであり、具体的には、酸化アルミニウム、酸化ケイ
素、酸化セリウム、酸化ジルコニウム、安定化剤として
酸化イットリウム、酸化スカンジウム、酸化インジウ
ム、酸化セリウム等の希土類酸化物、酸化マグネシウ
ム、酸化カルシウム等を固溶させた酸化ジルコニウム、
酸化マンガン、酸化チタン、酸化マグネシウム、酸化
鉄、酸化クロム、酸化イットリウム等の酸化物や炭化ケ
イ素、炭化ホウ素、窒化ホウ素等の非酸化物の中の少な
くとも1種類以上からなるものが通常は用いることがで
きる。ここで、被研磨材料との適合性とは、例えば被研
磨材料の硬度、靱性等の物理的特性や化学的反応性等の
化学的特性等に対して、要求される被研磨材料の仕上げ
表面精度、平坦性、研磨速度等を総合的に判断して選択
されることを意味する。
The inorganic particles used in the molded article for polishing of the present invention are appropriately selected in consideration of compatibility with the material to be polished, and specifically, aluminum oxide, silicon oxide, cerium oxide, Zirconium oxide, yttrium oxide as a stabilizer, scandium oxide, indium oxide, zirconium oxide in which a rare earth oxide such as cerium oxide, magnesium oxide, calcium oxide or the like is solid-soluted,
Usually, at least one of oxides such as manganese oxide, titanium oxide, magnesium oxide, iron oxide, chromium oxide and yttrium oxide and non-oxides such as silicon carbide, boron carbide and boron nitride is used. You can Here, the compatibility with the material to be polished means, for example, the required finishing surface of the material to be polished with respect to physical properties such as hardness and toughness of the material to be polished and chemical properties such as chemical reactivity. It means to be selected by comprehensively judging accuracy, flatness, polishing rate and the like.

【0013】しかしながら、本発明においては研磨用成
形体に対する研磨性能以外の要件として当該研磨用成形
体の使用に際しての取り扱いの容易性に加え、その原料
の取り扱いが容易であること、製造工程が煩雑でないこ
と、製造コストが比較的安価であること等を考慮して、
無機粒子としてはアルミナ、安定化剤を含有するジルコ
ニアが好適である。
However, in the present invention, in addition to the easiness of handling when using the polishing molded body as a requirement other than the polishing performance for the polishing molded body, the handling of the raw material is easy, and the manufacturing process is complicated. Not considering that the manufacturing cost is relatively low,
Alumina and zirconia containing a stabilizer are suitable as the inorganic particles.

【0014】なお、本発明の研磨用成形体には、砥粒粒
子を保持、固定化した合成砥石を得る際に一般的に用い
られるような、メタル、ビトリファイド、樹脂類等の結
合剤を実質的に含んでおらず、このような状態でラッピ
ング加工プロセスにおいてもその形状を保持することが
できるのである。
The polishing compact of the present invention essentially contains a binder such as metal, vitrified or resin, which is generally used for obtaining a synthetic grindstone holding and fixing abrasive grains. However, the shape can be maintained even in the lapping process in such a state.

【0015】本発明の研磨用成形体は、前記した無機粒
子から実質的に構成されるものであり、ラッピング加工
プロセスにおいては、その研磨面が被研磨材料に直接接
触して研磨作業を行わせるものである。この研磨用成形
体は、その研磨面の一部を模式的に示す概念図である図
1及び、図1の一部の断面を示す図2のような構造とな
っている。
The molded article for polishing of the present invention is substantially composed of the above-mentioned inorganic particles, and in the lapping process, the polishing surface is brought into direct contact with the material to be polished to perform the polishing operation. It is a thing. This polishing compact has a structure as shown in FIG. 1 which is a conceptual view schematically showing a part of the polishing surface and FIG. 2 which shows a cross section of a part of FIG.

【0016】ここで、研磨用成形体の研磨面にある非摺
擦部分とは、図1及び図2中の3に示されるように、被
研磨材料と直接接触することはなく、主に研磨加工にお
いて用いられる研磨液を滞留あるいは流通させ、摺擦部
分へ研磨液を供給しうる部分であり、場合によっては用
いる遊離砥粒が保持、固定される部分であり、1μmよ
り大きい細孔が存在する。また、研磨用成形体の研磨面
にある摺擦部分とは、図1及び図2中の2に示されるよ
うに、前記の非摺擦部分以外の部分であり、被研磨材料
と直接接触する部分である。尚、これらの非摺擦部分、
摺擦部分は、実施例にも示されるように、研磨用成形体
の研磨面を走査型顕微鏡で観察することで確認できる。
Here, the non-rubbing portion on the polishing surface of the molded article for polishing does not come into direct contact with the material to be polished as shown by 3 in FIGS. 1 and 2, and is mainly used for polishing. It is a part that allows the polishing liquid used in processing to stay or flow and supply the polishing liquid to the rubbing part. In some cases, the free abrasive grains used are held and fixed, and there are pores larger than 1 μm. To do. Further, the sliding portion on the polishing surface of the molded article for polishing is a portion other than the non-sliding portion, as shown by 2 in FIGS. 1 and 2, and is in direct contact with the material to be polished. It is a part. Incidentally, these non-rubbed parts,
The rubbing portion can be confirmed by observing the polishing surface of the polishing molded body with a scanning microscope, as shown in Examples.

【0017】さらに、研磨加工において被研磨材料を均
質に加工するために、研磨用成形体の研磨面にある摺擦
部分と非摺擦部分との分布状態に注目すれば、図1に示
されるように、被研磨材料を均質に加工する効果が一層
顕著となることから、非摺擦部分は研磨面に一様に分布
していることが好ましい。ここで、一様に分布している
とは、非摺擦部分が研磨用成形体の研磨面の一定範囲に
おいて、同程度の数あるいは面積割合で存在しているこ
とを意味する。
Further, in order to uniformly process the material to be polished in the polishing process, paying attention to the distribution state of the sliding portion and the non-sliding portion on the polishing surface of the polishing compact, FIG. 1 is shown. As described above, since the effect of uniformly processing the material to be polished becomes more remarkable, it is preferable that the non-rubbing portions are uniformly distributed on the polishing surface. Here, being uniformly distributed means that the non-rubbing portions are present in the same number or area ratio in a certain range of the polishing surface of the polishing molded body.

【0018】また、上記の非摺擦部分の研磨面における
分布が研磨加工中においても常に維持されていること好
ましく、このことにより被研磨材料の研磨加工を均質に
行うことができるのである。ここで、非摺擦部分の研磨
面における分布は、実施例にも示されるように、研磨用
成形体の研磨面の法線方向に垂直な面で研磨用成形体を
切断し、研磨面の状態を走査型顕微鏡などにより観察で
きる。
Further, it is preferable that the distribution of the non-rubbing portion on the polishing surface is always maintained even during the polishing process, which allows the polishing process of the material to be polished to be carried out uniformly. Here, the distribution of the non-rubbed portion on the polishing surface is, as shown in the examples, cut the polishing molded body along a plane perpendicular to the normal line direction of the polishing surface of the polishing molded body, The state can be observed with a scanning microscope or the like.

【0019】本発明の研磨用成形体の研磨面に存在する
摺擦部分及び非摺擦部分は上記のような微構造を有して
おり、このような構造を研磨加工中も保持しておれば、
被研磨材料の研磨加工を均質に行うこと、すなわち、被
研磨材料の研磨される各部分の間での研磨加工の速度の
ばらつきをより小さく抑えることができて均質あるいは
平坦性に優れた被研磨材料を得られ、また、研磨用成形
体自体の研磨面の各部分での消耗についてもばらつきを
抑えることができるなど、ラッピングにおける研磨性能
の均一性に優れることにつながるのである。
The rubbing portion and non-rubbing portion present on the polishing surface of the molded article for polishing of the present invention have the fine structure as described above, and such a structure should be retained even during the polishing process. If
Performing the polishing process of the material to be polished uniformly, that is, the variation of the polishing process speed among the respective portions to be polished of the material to be polished can be suppressed to be smaller, and the polishing target having excellent uniformity or flatness can be obtained. The material can be obtained, and the wear on each part of the polishing surface of the polishing compact itself can be suppressed from varying, leading to excellent polishing performance uniformity in lapping.

【0020】本発明の研磨用成形体の微構造は、その摺
擦部分を構成するアルミナ粒子、安定化剤を含有するジ
ルコニア粒子の全粒子の粒子径の60%以上が5μm以
下である研磨用成形体であり、かつアルミナ粒子の粒子
径の60%以上が5μm以下、安定化剤を含有するジル
コニア粒子の粒子径の60%以上が5μm以下である。
The fine structure of the molded abrasive product of the present invention is such that 60% or more of all particles of alumina particles constituting the rubbing portion and zirconia particles containing a stabilizer have a particle size of 5 μm or less. It is a molded product, and 60% or more of the particle size of alumina particles is 5 μm or less, and 60% or more of the particle size of zirconia particles containing a stabilizer is 5 μm or less.

【0021】本発明の研磨用成形体を用いた研磨加工方
法では通常平均粒子径10μm以下の砥粒を用いること
になるため、この砥粒径を考慮した場合、研磨用成形体
の摺擦部分を構成するアルミナ粒子、安定化剤を含有す
るジルコニア粒子の全粒子の粒子径の60%以上が5μ
m以下であると砥粒を連続的に使用した場合の研磨速度
の低下が抑制されるので好ましい。つまり、5μmより
大きい粒子が40%より少ないことが好ましいことにな
る。5μmより大きい粒子が40%以上となると砥粒を
連続的に使用した場合の研磨速度の低下が著しいので好
ましくない。
In the polishing method using the polishing compact of the present invention, abrasive grains having an average particle diameter of 10 μm or less are usually used. Therefore, in consideration of the abrasive grain size, the sliding portion of the polishing compact is considered. 60% or more of the particle diameter of all particles of the zirconia particles containing the alumina particles and the stabilizer constituting the
It is preferable that it is m or less because a decrease in the polishing rate when the abrasive grains are continuously used is suppressed. That is, it is preferable that the number of particles larger than 5 μm is less than 40%. If the proportion of particles larger than 5 μm is 40% or more, it is not preferable because the polishing rate is remarkably lowered when the abrasive grains are continuously used.

【0022】さらに、研磨用成形体を構成するアルミナ
の粒子径の60%以上が5μm以下、安定化剤を含有す
るジルコニアの粒子径の60%以上が5μm以下である
ことが好ましい。研磨用成形体を構成する複数の無機粒
子それぞれが同様の粒子径分布を有することで研磨性能
の安定化が図られる。
Further, it is preferable that 60% or more of the particle diameter of alumina constituting the polishing compact is 5 μm or less, and 60% or more of the particle diameter of zirconia containing a stabilizer is 5 μm or less. Since the plurality of inorganic particles forming the polishing compact have the same particle size distribution, the polishing performance can be stabilized.

【0023】本発明の研磨用成形体において、当該研磨
用成形体を構成するアルミナ粒子の面積割合をX、安定
化剤を含有するジルコニア粒子の面積割合をYとしたと
きに、0.25≦X/(X+Y)≦0.95であること
がさらに好ましい。アルミナ粒子、安定化剤を含有する
ジルコニア粒子の面積割合が前記範囲内にあることによ
り、研磨用成形体の減耗率が小さく抑制される。
In the polishing compact of the present invention, when the area ratio of the alumina particles constituting the polishing compact is X and the area ratio of the zirconia particles containing the stabilizer is Y, 0.25≤ It is further preferable that X / (X + Y) ≦ 0.95. When the area ratio of the alumina particles and the zirconia particles containing the stabilizer is within the above range, the abrasion loss rate of the polishing compact is suppressed to be small.

【0024】さらに前記割合が0.4≦X/(X+Y)
≦0.9であると研磨用成形体の減耗率が一層小さくな
るのでより好ましい。
Further, the ratio is 0.4 ≦ X / (X + Y)
It is more preferable that ≦ 0.9 because the abrasion loss rate of the polishing compact will be further reduced.

【0025】前記したような本発明の研磨用成形体の研
磨性能としてより一層の研磨速度の向上や実用上の研磨
用成形体自身の消耗を抑制させることに重きを置くなら
ば当該研磨用成形体の非摺擦部分の細孔径の20%以上
が10μm以上であることがさらに好ましい。この細孔
径の上限は特に限定されるものではないが、3mmを超
える径の細孔が多く導入されると研磨加工中の破損が多
くなりやすいため、10μm以上の径を有する細孔全体
の中、実質的には10μm〜3mmの範囲内である細孔
が80%以上であることが好適である。
If the emphasis is placed on further improving the polishing rate and suppressing the wear of the polishing compact itself for practical use as the polishing performance of the above-described polishing compact of the present invention, the polishing compaction is concerned. It is more preferable that 20% or more of the pore diameter of the non-rubbed portion of the body is 10 μm or more. The upper limit of the pore diameter is not particularly limited, but if many pores with a diameter of more than 3 mm are introduced, damage during polishing is likely to increase. It is preferable that the number of pores substantially within the range of 10 μm to 3 mm is 80% or more.

【0026】また、本発明の研磨用成形体を用いた研磨
加工方法では前記したように通常平均粒子径10μm以
下の砥粒を用いることになる。この砥粒径を考慮した場
合、前記したような研磨用成形体の研磨性能として砥粒
の連続使用による研磨速度の安定性にも重きを置くなら
ば当該研磨用成形体の非摺擦部分の細孔径の20〜80
%が1〜10μmであることがさらに好ましい。このよ
うな範囲にあることにより砥粒を連続的に使用した場合
の研磨速度の低下が一層抑制される。この範囲を上回る
と研磨用成形体としての機能を十分に有するが消耗が前
記範囲よりも大きくなるので好ましくない。この範囲と
下回ると砥粒を連続的に使用した場合の研磨速度の低下
が前記範囲よりも大きくなるので好ましくない。
Further, in the polishing method using the molded article for polishing of the present invention, as described above, the abrasive grains having an average particle diameter of 10 μm or less are usually used. Considering this abrasive grain size, if the stability of the polishing rate due to continuous use of abrasive grains is emphasized as the polishing performance of the above-mentioned polishing compact, if the non-rubbing part of the polishing compact is concerned. Pore size 20-80
More preferably, the percentage is 1 to 10 μm. Within such a range, a decrease in the polishing rate when the abrasive grains are continuously used is further suppressed. Exceeding this range is not preferable because it has a sufficient function as a molded article for polishing, but wear is greater than the above range. If it is less than this range, the reduction of the polishing rate when the abrasive grains are continuously used becomes larger than the above range, which is not preferable.

【0027】尚、上記の摺擦部分及び非摺擦部分の面積
は、実施例にも示されるように各部分を走査型電子顕微
鏡等で観察し、構成される無機粒子及び細孔の径をイン
ターセプト法により個数基準で算出した後に、所定の研
磨面の面積当たりに換算して求めることができる。
The areas of the rubbing portion and the non-rubbing portion are determined by observing each portion with a scanning electron microscope or the like, as shown in the examples, and determining the diameters of the inorganic particles and the pores. It can be calculated by calculating the number of particles by the intercept method and then converting it into the area of a predetermined polishing surface.

【0028】本発明の研磨用成形体において、当該研磨
用成形体を構成する安定化剤を含有するジルコニアの単
斜晶率は5%以下であることがさらに好ましい。安定化
剤を含有するジルコニアの結晶相は、通常単斜晶相、正
方晶相、立方晶相のいずれか、またはそれらの混合相と
して実施例に示されるX線回折試験で同定されるが、単
斜晶相の割合、つまり単斜晶率が5%以下であると研磨
用成形体の減耗率が低く抑制されるからである。
In the polishing compact of the present invention, it is more preferable that the monoclinic crystal ratio of zirconia containing the stabilizer constituting the polishing compact is 5% or less. The crystal phase of zirconia containing the stabilizer is usually identified by an X-ray diffraction test shown in Examples as a monoclinic phase, a tetragonal phase, a cubic phase, or a mixed phase thereof. This is because if the proportion of the monoclinic phase, that is, the monoclinic rate is 5% or less, the wear rate of the polishing compact is suppressed to be low.

【0029】ここで、本明細書における安定化剤を含有
するジルコニアの結晶相の比率の算出は、当該研磨用成
形体の研磨に携わる面を研磨評価後に実施例に示すよう
なX線回折試験により安定化剤を含有するジルコニアの
単斜晶相、正方晶相、立方晶相の所定の面指数の回折積
分強度を測定することにより行われるものである。
Here, the calculation of the ratio of the crystal phase of zirconia containing a stabilizer in the present specification is carried out by an X-ray diffraction test as shown in the example after polishing evaluation of the surface of the molded article for polishing which is involved in polishing. Is measured by measuring the diffraction integral intensity of a predetermined plane index of a monoclinic phase, a tetragonal phase and a cubic phase of zirconia containing a stabilizer.

【0030】本発明の研磨用成形体において、当該研磨
用成形体を構成する安定化剤を含有するジルコニアの安
定化剤がイットリアであることがさらに好ましい。安定
化剤としては前記したように酸化イットリウム、酸化ス
カンジウム、酸化インジウム、酸化セリウム等の希土類
酸化物、酸化マグネシウム、酸化カルシウム等が挙げら
れるが、曲げ強度、硬度等の機械的特性に優れるためで
ある。
In the abrasive compact of the present invention, it is more preferred that the stabilizer for zirconia containing the stabilizer constituting the abrasive compact is yttria. Examples of the stabilizer include yttrium oxide, scandium oxide, indium oxide, rare earth oxides such as cerium oxide, magnesium oxide, calcium oxide and the like as described above, but because of their excellent mechanical properties such as bending strength and hardness. is there.

【0031】本発明の研磨用成形体において、当該研磨
用成形体を構成する安定化剤を含有するジルコニアの安
定化剤のイットリア量がイットリア量とジルコニア量の
総和に対して3〜8重量%であることがさらに好まし
い。イットリア量が少なくなるほど結晶相の安定性が低
下し、特に前記範囲を下回ると研磨用成形体の研磨に携
わる面に単斜晶率が生じ易くなり、一方イットリア量が
多くなるほど結晶相の安定性が増し、正方晶相、さらに
は立方晶相が得られるが、曲げ強度、硬度等の機械的特
性が低下して研磨用成形体の消耗に影響を及ぼすため前
記範囲内であることがさらに好ましいのである。
In the abrasive compact of the present invention, the yttria amount of the zirconia stabilizer containing the stabilizer constituting the abrasive compact is 3 to 8% by weight based on the sum of the yttria amount and the zirconia amount. Is more preferable. The smaller the amount of yttria, the lower the stability of the crystal phase, and especially when it is less than the above range, the monoclinic crystal ratio is likely to occur on the surface involved in polishing of the polishing compact, while the larger the amount of yttria, the stability of the crystal phase. However, the tetragonal phase and further the cubic phase are obtained, but the mechanical properties such as bending strength and hardness are deteriorated and the wear of the polishing compact is affected, so that the above range is more preferable. Of.

【0032】<研磨用成形体の製造法>本発明の研磨用
成形体の製造方法は前記特性を有する研磨用成形体を得
ることのできる方法であれば特に限定されるものではな
く、無機粒子の粉末を成形する、成形の後に焼成等の加
工処理を行うなどの方法を例示できる。
<Method for producing molded article for polishing> The method for producing a molded article for polishing of the present invention is not particularly limited as long as it is a method capable of obtaining a molded article for polishing having the above-mentioned characteristics, and inorganic particles Examples of the method include molding the powder of (1), and processing such as firing after molding.

【0033】さらに具体的に本発明の研磨用成形体の製
造法を示すと、原料粉末に圧力をかける等により成形し
て適当な形状、大きさの成形体とし、その後必要に応じ
て加工して研磨に用いられる成形体とするものである。
More specifically, the method for producing a molded body for polishing according to the present invention will be described. The raw material powder is molded into a molded body having an appropriate shape and size, and then processed if necessary. To obtain a molded body used for polishing.

【0034】ここで、圧力をかけて成形する場合、例え
ばプレス成形等の成形法が例示でき、その圧力条件とし
ては、特に限定されるものではなく、公知の条件にて行
うことができる。また、鋳込み成形、射出成形、押出成
形なども適用できる。
Here, when molding is carried out under pressure, for example, a molding method such as press molding can be exemplified, and the pressure condition is not particularly limited, and it can be carried out under known conditions. Further, cast molding, injection molding, extrusion molding and the like can also be applied.

【0035】研磨用成形体を構成する無機粒子の原料粉
末の平均粒子径は特に限定されるものではないが、0.
005〜10μmのものを用いることが好ましい。平均
粒子径が0.005μmを下回るような粒子を用いるこ
とは後述するように実際上困難であり、平均粒子径が1
0μmを超える粒子を用いることも可能であるが、研磨
用成形体を製造する際に制約が生じることがある。
The average particle size of the raw material powder of the inorganic particles constituting the molded body for polishing is not particularly limited, but is not limited to 0.
It is preferable to use those having a diameter of 005 to 10 μm. It is practically difficult to use particles having an average particle size of less than 0.005 μm, as will be described later.
Although it is possible to use particles having a particle size of more than 0 μm, there may be restrictions in producing a molded article for polishing.

【0036】さらに、成形する際の原料粉末の成形性を
向上させるために原料粉末に処理を施してもよい。その
具体的な処理の方法としては、例えば圧密する方法など
が挙げられるが、その条件は特に限定されるものではな
い。また、同様に原料粉末の成形性を向上させるため、
スプレードライ法や転動法などにより造粒したり、バイ
ンダー、ワックス等を添加してもよい。
Further, the raw material powder may be treated in order to improve the formability of the raw material powder at the time of molding. As a specific method of the treatment, for example, a method of consolidating can be mentioned, but the condition is not particularly limited. In addition, in order to improve the formability of the raw material powder,
Granulation may be performed by a spray drying method, a rolling method, or the like, or a binder, wax, or the like may be added.

【0037】また、原料粉末より無機粒子からなる成形
体への成形性を向上させるために成形前に原料粉末へワ
ックスやバインダーなどの有機物を添加する場合には、
研磨用成形体への加工に際し、脱脂することが好まし
い。脱脂方法は特に限定されるものではないが、例えば
大気雰囲気下での加熱による脱脂、または窒素、アルゴ
ン、ヘリウムなどの不活性雰囲気中での加熱脱脂などが
挙げられる。このときの雰囲気ガスの圧力は加圧下また
は常圧下、場合によっては減圧下であってもよい。ま
た、同様に成形性を向上させるために水分を添加し、そ
の後の焼成操作前に乾燥させることもできる。
When an organic substance such as a wax or a binder is added to the raw material powder before molding in order to improve the moldability of the raw material powder into a molded body made of inorganic particles,
Degreasing is preferably performed during processing into a molded article for polishing. The degreasing method is not particularly limited, and examples thereof include degreasing by heating in an air atmosphere and heating degreasing in an inert atmosphere of nitrogen, argon, helium or the like. At this time, the pressure of the atmospheric gas may be increased pressure or normal pressure, or may be reduced pressure in some cases. Similarly, water may be added in order to improve the moldability and dried before the subsequent firing operation.

【0038】さらに、この原料粉末に対して、研磨用成
形体の細孔構造を制御するための細孔を導入するために
造孔剤を混合しても良い。この造孔剤の種類としては、
各種有機物粉末、カーボン粉末等を例示することができ
る。
Further, a pore-forming agent may be mixed with this raw material powder in order to introduce pores for controlling the pore structure of the polishing compact. As the type of this pore forming agent,
Examples thereof include various organic powders and carbon powders.

【0039】次に、成形体、殊にバインダーや造孔剤を
取り除いた成形体は、一般的に強度が脆く、その強度を
上げ、研磨加工に用いるためにその耐久性を向上させる
ために、得られた成形体に対して加熱による焼成等の加
工を行うことが好ましい。しかし、耐久性を向上させる
方法としては、加熱焼成に限定されるものではなく、例
えば成形体の細孔中に物質を導入する方法を採用するこ
ともできる。
Next, the molded body, especially the molded body from which the binder and the pore-forming agent have been removed, is generally weak in strength, and in order to increase its strength and improve its durability for use in polishing, It is preferable to perform processing such as firing by heating on the obtained molded body. However, the method for improving durability is not limited to heating and firing, and for example, a method of introducing a substance into the pores of the molded body can be adopted.

【0040】加熱焼成の場合の焼成条件は特に限定され
るものではないが、焼成温度、焼成時間、焼成プログラ
ム、焼成雰囲気等を適宜選択すればよい。
The firing conditions in the case of heating and firing are not particularly limited, but the firing temperature, firing time, firing program, firing atmosphere and the like may be appropriately selected.

【0041】このように無機粒子からなる成形体より研
磨用成形体への加工方法としては、加熱脱脂、加熱焼
成、機械加工、化学処理、物理処理、あるいはこれらの
組み合わせ等による方法が例示できるが、研磨用成形体
として研磨作業に使用できる強度を付与できる加工方法
であれば特に限定されるものではない。
As a method for processing a molded body made of inorganic particles into a molded body for polishing, there can be exemplified a method such as heat degreasing, heat firing, mechanical processing, chemical treatment, physical treatment, or a combination thereof. The processing method is not particularly limited as long as it is a processing method that can impart strength that can be used for polishing work as a molded body for polishing.

【0042】特に研磨用成形体の被研磨材料との研磨に
携わる面が研磨加工中に常に所定の条件範囲内に存在す
るようにすることで物性の均一性に優れた状態にするた
めには以下に示す方法を考慮することが一層好適であ
る。
In particular, in order to obtain a state in which the physical properties are excellent by ensuring that the surface of the molded article for polishing with the material to be polished that is involved in polishing is always within a predetermined condition range during polishing. It is more preferable to consider the method shown below.

【0043】すなわち、研磨に携わる面の微構造を常に
所定条件範囲内に存在させるためには、研磨用成形体中
に、当該研磨用成形体の研磨加工に携わる面に垂直な方
向に平行な面内において細孔を均一に分散させる必要が
ある。例えば、前記記載の製法においては、造孔剤を混
合する場合にはその粒子径を前記所定範囲内とするため
に、整粒、分級することが望ましい。また、同様に細孔
を均一に分散させるために、造孔剤と原料粉末を当該研
磨用成形体の基材となるべく成形体微構造内において極
力均一に分散させる必要があり、そのために原料粉末を
何らかの手法により造粒して、造孔剤の粒径と相応した
関係、すなわち混合状態を適した状態にする関係とする
ことも一手段となり得る。この場合の粒径の関係は、造
粒粉末の比重、造孔剤の比重、それらの混合比等を考慮
して適宜決定されるべきものである。
That is, in order to make the microstructure of the surface involved in polishing always exist within the predetermined condition range, in the polishing compact, it is parallel to the direction perpendicular to the surface of the polishing compact involved in polishing. It is necessary to uniformly disperse the pores in the plane. For example, in the above-mentioned production method, when the pore-forming agent is mixed, it is desirable to perform sizing and classification so that the particle diameter falls within the predetermined range. Similarly, in order to uniformly disperse the pores, it is necessary to disperse the pore-forming agent and the raw material powder as uniformly as possible in the microstructure of the compact as the base material of the polishing compact, for which the raw material powder is used. It may be one means to granulate by a certain method so as to have a relationship corresponding to the particle size of the pore-forming agent, that is, a relationship that brings the mixed state into an appropriate state. In this case, the relationship between the particle diameters should be appropriately determined in consideration of the specific gravity of the granulated powder, the specific gravity of the pore-forming agent, their mixing ratio, and the like.

【0044】また、原料粉末を成形する際に所定の径を
有する有機物や炭素繊維を研磨用成形体の研磨に携わる
面に対して垂直になるように導入する方法や所定の外内
径を有する中空粒子を混合する方法等も例示できる。こ
こで中空粒子の内径は研磨用成形体に導入する細孔径に
準じ、外径、つまり中空粒子の粒子径は当該中空粒子の
中空部分が研磨用成形体の研磨に携わる面に所定の分散
状態となるように考慮された径になる。
Further, when molding the raw material powder, a method of introducing an organic substance or carbon fiber having a predetermined diameter so as to be perpendicular to the surface of the polishing molded body involved in polishing, or a hollow having a predetermined outer and inner diameter A method of mixing particles can also be exemplified. Here, the inner diameter of the hollow particles conforms to the pore diameter introduced into the polishing compact, and the outer diameter, that is, the particle diameter of the hollow particles has a predetermined dispersion state on the surface where the hollow portion of the hollow particles is involved in polishing of the polishing compact. The diameter has been taken into consideration.

【0045】しかしながら、このような方法を敢えて採
らなくとも前記記載の特性を有している研磨用成形体を
製造できれば特に採る必要はないとともにこれらの製法
に限定されるものではない。
However, if it is possible to produce a molded article for polishing having the above-mentioned characteristics without intentionally adopting such a method, it is not necessary to employ it and the method is not limited to these methods.

【0046】<研磨用定盤の構成>次に、この研磨用成
形体を研磨用の定盤として組み込み、さらにこれを用い
て研磨する方法について説明する。
<Structure of Polishing Surface Plate> Next, a method of incorporating this polishing molded body as a polishing surface plate and further polishing by using it will be described.

【0047】まず、研磨用成形体と研磨用の付帯部品と
を用いて研磨用定盤が形成される。ここで、付帯部品と
は研磨用定盤を構成する種々の材質、形状の構造体であ
り、この付帯部品に対して研磨用成形体を以下に示され
る手法により配置し、固定することで研磨用定盤が形成
される。両者の固定方法としては、接着剤を用いて接着
して固定する方法、付帯部品に凹凸を形成し、その固定
場所へ埋め込む方法など、本発明の目的を達成できる方
法であれば制限なく用いることができる。
First, a polishing platen is formed by using the polishing compact and the accessory components for polishing. Here, the accessory parts are structures of various materials and shapes that make up the polishing platen, and a polishing compact is arranged and fixed to the accessory parts by the method shown below. The surface plate is formed. As a method for fixing the both, any method can be used without limitation as long as it is a method that can achieve the object of the present invention, such as a method of adhering and fixing with an adhesive, a method of forming irregularities on an auxiliary component and embedding it in the fixing place You can

【0048】研磨用成形体を研磨用の付帯部品へ固定す
る際の研磨用成形体の個数については、1個または2個
以上用いればよく、さらに2個以上用いることが好まし
い。この理由としては、以下のことなどが考えられる。
しかしながら、これらの考えは本発明を限定するもので
はない。
As for the number of the polishing compacts when fixing the polishing compacts to the accessory parts for polishing, one or two or more may be used, and more preferably two or more. The reason may be as follows.
However, these ideas do not limit the invention.

【0049】1)研磨加工プロセスにおいて用いられる
研磨液を研磨加工中に適切に排出することでその速度を
向上させるためである。このため、研磨用成形体を2個
以上用いて研磨用定盤を形成させた場合には、研磨用成
形体間の隙間より研磨液の排出ができる。また、1個を
用いた場合には、研磨用成形体の研磨面の側に研磨液を
排出できる適当な溝の構造を持たせることが好ましい。
1) This is to improve the speed by appropriately discharging the polishing liquid used in the polishing process during the polishing process. Therefore, when two or more polishing compacts are used to form the polishing platen, the polishing liquid can be discharged from the gap between the polishing compacts. Further, when one piece is used, it is preferable to have a structure of an appropriate groove capable of discharging the polishing liquid on the side of the polishing surface of the polishing compact.

【0050】2)研磨用成形体を2個以上用いて研磨用
定盤を形成させた場合には、研磨用成形体と被研磨材料
の摺擦面への研磨液の供給が改善され、被研磨材料全面
の研磨速度に偏りなく、効率よく加工できるようにな
る。
2) When the polishing platen is formed by using two or more polishing compacts, the supply of the polishing liquid to the sliding surfaces of the polishing compacts and the material to be polished is improved, and The polishing rate of the entire surface of the polishing material is not biased, and efficient processing can be performed.

【0051】また、研磨用成形体を2個以上の複数個用
いて研磨用定盤を構成した場合、複数種類の研磨用成形
体を用いることも可能である。この複数種類とは無機粒
子の素材や平均粒子径が異なることを指すばかりでな
く、研磨用成形体の物性、微構造等が異なる場合も含ま
れるものである。このとき、複数種類の研磨用成形体は
組み込まれる付帯部品に対し、研磨加工際しての対称性
を考慮して配置されることが好ましい。このようにする
ことにより、複数種類の研磨用成形体を用いた場合に
も、研磨加工に際して均一な性能を得ることが可能とな
る。
When the polishing platen is formed by using two or more polishing compacts, it is possible to use a plurality of types of polishing compacts. The plural types do not only mean that the raw material of the inorganic particles and the average particle size are different, but also include the case where the physical properties, the microstructure, etc. of the molded article for polishing are different. At this time, it is preferable that the plurality of types of polishing compacts are arranged in consideration of the symmetry in the polishing process with respect to the accessory parts to be incorporated. By doing so, it is possible to obtain uniform performance in polishing even when a plurality of types of polishing compacts are used.

【0052】用いられる研磨用成形体の形状は前記した
ように特に限定されるものではなく、研磨用成形体が研
磨用の付帯部品へ装着できるものであればどのような形
状のものも採用できる。例えば円柱状ペレット、四角柱
状ペレットや三角状ペレットなどの角柱状ペレット、扇
型柱状ペレット、あるいはそれらの中心を繰り抜いたリ
ング状ペレット等を例示でき、さらには被研磨材料との
接触面が直線と曲線を組み合わせてできるあらゆる形状
のものが例示できる。また、その大きさは通常用いられ
る範囲であれば特に限定されるものではなく、研磨用定
盤中の研磨用成形体を組み込むための付帯部品の大きさ
に応じて決められるが、通常は一辺が5mm角以上の範
囲内に入る大きさであれば良い。この範囲内よりも小さ
い大きさの研磨用成形体でも十分な研磨性能を有する
が、研磨用定盤としては複数個使用しなければならなく
なり、その個数が非常に多くなるため実用的でなくなる
ことがある。
The shape of the polishing compact to be used is not particularly limited as described above, and any shape can be adopted as long as the polishing compact can be attached to an accessory component for polishing. . For example, columnar pellets, prismatic columnar pellets such as square columnar pellets and triangular pellets, fan-shaped columnar pellets, or ring-shaped pellets obtained by punching out the center of the pellets can be exemplified. Any shape that can be formed by combining and curves can be exemplified. Further, the size is not particularly limited as long as it is within a range that is normally used, and is determined according to the size of an accessory component for incorporating a molded body for polishing in a polishing surface plate, but usually one side The size may be within a range of 5 mm square or more. Even a molded compact for polishing having a size smaller than this range has sufficient polishing performance, but a plurality of polishing plates must be used, and the number of polishing plates will be too large to be practical. There is.

【0053】本発明において用いられる研磨用成形体を
研磨用定盤として配置する際の配置方法の態様として
は、前記記載の研磨用成形体の特性を有するものを組み
合わせるのであれば特に限定されるものではなく、例え
ば研磨用成形体の小片を組み合わせて一体化する方法、
大きな円板に埋め込む方法などが挙げられる。
The aspect of the arranging method when arranging the polishing compact used in the present invention as a polishing platen is particularly limited as long as it has a combination of the polishing compacts having the characteristics described above. Not a thing, for example, a method of combining and integrating small pieces of a molded article for polishing,
There is a method of embedding it in a large disc.

【0054】このような研磨用成形体を2個以上研磨用
定盤へ配列させる場合には配置された研磨用成形体の研
磨面を被研磨材料の形状に合うように整えることが望ま
しい。この場合、付帯部品についてその形状に合ったも
のを選択してもよい。例えば、被研磨材料が平坦な基板
材料の場合にはその研磨用成形体の被研磨材料との接触
面を平坦化することが望ましく、曲面状の場合にはそれ
に合った曲面状とすることが望ましい。これは、得られ
た研磨用定盤を用いて研磨加工する際に、被研磨材料と
研磨用成形体が直接接触できるようになっており、その
接触面を多く取ることができるようにするためである。
特に平坦化する場合は、研磨用定盤からの垂直方向の高
さに対してばらつきがないように配置することが好まし
い。
When arranging two or more of such polishing compacts on the polishing platen, it is desirable to arrange the polishing surface of the disposed polishing compacts so as to match the shape of the material to be polished. In this case, it is possible to select an accessory that matches the shape of the accessory. For example, when the material to be polished is a flat substrate material, it is desirable to flatten the contact surface of the polishing molded body with the material to be polished. desirable. This is because the material to be polished and the molded compact for polishing can be brought into direct contact with each other when polishing is performed using the obtained polishing platen, so that many contact surfaces can be taken. Is.
In particular, in the case of flattening, it is preferable to arrange so that there is no variation with respect to the height in the vertical direction from the polishing platen.

【0055】<研磨用定盤を用いた研磨加工方法>この
ようにして研磨用定盤に研磨用成形体を組み込むわけで
あるが、本発明の研磨用定盤を用いて研磨加工する方法
においては、定盤として研磨加工プロセスにおいて使用
されるものであれば、その形状、研磨加工条件、研磨液
等の使用の有無等については特に限定されるものではな
い。例えば、研磨液を使用する場合には、従来より用い
られてきた研磨液を用いることでよく、例えば水、水酸
化カリウム水溶液、水酸化ナトリウム水溶液、アミンや
有機酸を含む水溶液などの中性、アルカリ性、酸性の水
溶液、場合によっては有機系溶液を用いることができ、
その温度もこれら研磨液の沸点よりも低い温度の範囲で
あれば、特に限定されるものではない。もちろん、遊離
砥粒として通常用いられている、酸化アルミニウム、酸
化ケイ素、酸化セリウム、酸化ジルコニウム、酸化マン
ガン、酸化チタン、酸化マグネシウム、酸化鉄、酸化ク
ロム、酸化イットリウム、酸化錫等の酸化物や、炭化ケ
イ素、炭化ホウ素、窒化ホウ素等の非酸化物を用いるこ
とができ、さらに酸化ジルコニウムについては、安定化
剤として酸化イットリウム、酸化スカンジウム、酸化イ
ンジウム、酸化セリウム等の希土類酸化物、酸化マグネ
シウム、酸化カルシウム等を固溶させた酸化ジルコニウ
ムなどを用いてもよい。また、研磨液の流量や、加工圧
力、被研磨材料と定盤の研磨加工中の相対速度(研磨用
定盤の回転速度)などの研磨加工条件に関しても、特に
限定されるものではない。
<Polishing Method Using Polishing Surface Plate> In this way, the polishing compact is incorporated into the polishing surface plate, and in the method of polishing using the polishing surface plate of the present invention. As long as it is used as a surface plate in the polishing process, its shape, polishing conditions, use of a polishing liquid, etc. are not particularly limited. For example, when a polishing liquid is used, a polishing liquid that has been conventionally used may be used, for example, water, a potassium hydroxide aqueous solution, a sodium hydroxide aqueous solution, a neutral solution such as an aqueous solution containing an amine or an organic acid, An alkaline or acidic aqueous solution, or an organic solution can be used in some cases,
The temperature is not particularly limited as long as it is in the range of the temperature lower than the boiling point of these polishing liquids. Of course, oxides such as aluminum oxide, silicon oxide, cerium oxide, zirconium oxide, manganese oxide, titanium oxide, magnesium oxide, iron oxide, chromium oxide, yttrium oxide, tin oxide, which are usually used as loose abrasive grains, Non-oxides such as silicon carbide, boron carbide, and boron nitride can be used. Furthermore, for zirconium oxide, rare earth oxides such as yttrium oxide, scandium oxide, indium oxide, and cerium oxide as stabilizers, magnesium oxide, and oxides can be used. Zirconium oxide in which calcium or the like is dissolved may be used. Further, the polishing processing conditions such as the flow rate of the polishing liquid, the processing pressure, the relative speed of the material to be polished and the surface plate during the polishing processing (the rotation speed of the polishing surface plate) are not particularly limited.

【0056】ここで、研磨用定盤とは組み込まれた研磨
用成形体が被研磨材料に対して直接接触して研磨加工す
るために用いられ、研磨加工プロセスにおいて十分な強
度を有し、かつ被研磨材料と同じ形状を有するだけでな
く、必要に応じて非平面の形状を有していてもよい。例
えば、平板状、円盤状、リング状、円筒状等を挙げるこ
とができる。
Here, the polishing surface plate is used for polishing the incorporated polishing compact by directly contacting the material to be polished, and has sufficient strength in the polishing process. Not only does it have the same shape as the material to be polished, but it may have a non-planar shape as required. For example, a flat plate shape, a disk shape, a ring shape, a cylindrical shape and the like can be mentioned.

【0057】また、研磨加工方法においては研磨布を用
いないため、研磨中に従来の方法において見られた研磨
布の性能劣化によるその取り換え等による研磨加工作業
の中断については、本発明の研磨用成形体を用いること
で耐久性が向上し、取り換え頻度を減少できるため研磨
加工の作業効率が向上できるという利点を有している。
Further, since the polishing cloth is not used in the polishing method, the interruption of the polishing operation due to the deterioration of the performance of the polishing cloth, which has been found in the conventional method during the polishing, can be prevented by the polishing method of the present invention. The use of the molded product has the advantages that the durability is improved and the replacement frequency can be reduced, so that the work efficiency of the polishing process can be improved.

【0058】本発明の研磨用成形体、それを用いた研磨
用定盤は、半導体基板、酸化物基板、各種ガラス基板、
石英ガラス基板等の基板材料、磁気ヘッド材料、各種ガ
ラス、金属材料、レンズ等の光学材料、建築分野等に使
用される石材等の研磨加工にも有用である。
The polishing compact of the present invention and the polishing platen using the same are used for semiconductor substrates, oxide substrates, various glass substrates,
It is also useful for polishing substrate materials such as quartz glass substrates, magnetic head materials, various glasses, metal materials, optical materials such as lenses, and stone materials used in the construction field and the like.

【0059】[0059]

【実施例】以下、本発明を実施例を用いてさらに詳細に
説明するが、本発明はこれらに限定されるものではな
い。なお、各評価は以下に示した方法によって実施し
た。 〜研磨用成形体の相対密度〜 100mm×100mm×15mm(厚さ)の平板状試
料を作製し、試料とした。この試料を電子天秤で測定し
た重量と、マイクロメータで測定した形状寸法から研磨
用成形体のかさ密度W2を算出した。次に、JIS−R
−2205に準じて、研磨用成形体の一部を粉砕し、真
密度W1を求め、先に算出した研磨用成形体のかさ密度
W2から下式により相対密度を算出した。
The present invention will be described in more detail with reference to examples, but the present invention is not limited to these. In addition, each evaluation was implemented by the method shown below. —Relative Density of Polishing Molded Body— A 100 mm × 100 mm × 15 mm (thickness) flat plate sample was prepared and used as a sample. The bulk density W2 of the polishing compact was calculated from the weight of this sample measured by an electronic balance and the shape dimension measured by a micrometer. Next, JIS-R
According to -205, a part of the polishing compact was crushed to obtain the true density W1, and the relative density was calculated from the previously calculated bulk density W2 of the polishing compact by the following formula.

【0060】相対密度(%)=(W2/W1)×100 〜研磨用成形体の研磨面の微構造〜 研磨用成形体をアクリル樹脂で包埋後、ミクロトームで
切断して観察用サンプルを作製した。この観察用サンプ
ルを走査型電子顕微鏡ISI DS−130(明石製作
所製)で観察した。各種倍率で撮影した電子顕微鏡写真
を無機粒子、細孔それぞれを考慮してインターセプト法
により平均径を求めた。また、このときの無機粒子、細
孔それぞれを横切る線長をその径とし、その径の和を基
に面積の割合を算出した。そして各々の合計から、研磨
面の面積に対する非摺擦部分の面積の割合をA、研磨面
の面積に対する摺擦部分の面積の割合をBとし、比率A
/(A+B)(=r)を算出した。 〜研磨用成形体を構成する無機粒子の平均粒子径〜 前記研磨用成形体の研磨面の微構造の観察に準じ、無機
粒子部分のみを考慮してインタセプト法により個数基準
で平均粒子径を求めた。 〜研磨用成形体の摺擦部分の粒径分布〜 前記研磨用成形体の研磨面の微構造の観察に準じ、無機
粒子部分のみを考慮してインタセプト法により粒径を算
出し、円を想定して面積換算して面積基準の粒径分布及
び平均粒子径を求めた。 〜研磨用成形体の摺擦部分の構成〜 前記研磨用成形体の研磨面の微構造の観察に準じて走査
型電子顕微鏡観察を行い、1μm以下の細孔部分と無機
粒子部分を考慮してインターセプト法により、無機粒
子、1μm以下の細孔部分それぞれを横切る線長の割合
から、摺擦部分の面積に対する摺擦部分中の細孔の面積
の割合を算出した。 〜研磨用成形体の摺擦部分のアルミナ粒子の面積割合〜 研磨用成形体の微構造観察に準じて走査型電子顕微鏡観
察を行い、アルミナ粒子、安定化剤を含有するジルコニ
ア粒子を考慮してインターセプト法により求めた。 〜研磨用成形体の非摺擦部分の構成〜 前記研磨用成形体の研磨面の微構造の観察に準じて走査
型電子顕微鏡観察を行い、1μmより大きい細孔部分を
考慮してインターセプト法により、1μmより大きい細
孔部分を横切る線長の割合から非摺擦部分の割合を算出
した。 〜研磨用成形体の研磨に携わる面の結晶相分率〜 X線回折装置(マックサイエンス社製、型式:MXP−
3)を用いて、X線回折試験(CuKα線、40kV、
30mA)を行い、安定化剤を含有するジルコニアの単
斜晶、正方晶、立方晶の各相の下式に記載される面の各
回折積分強度を測定し、下式により求めた。
Relative density (%) = (W2 / W1) × 100-Microstructure of polishing surface of molded article for polishing-Embedded molded article for polishing with acrylic resin and cut with microtome to prepare observation sample did. This observation sample was observed with a scanning electron microscope ISI DS-130 (manufactured by Akashi Seisakusho). An electron micrograph taken at various magnifications was used to determine the average diameter by the intercept method in consideration of each of the inorganic particles and the pores. In addition, the line length that crosses each of the inorganic particles and the pores at this time was defined as the diameter, and the area ratio was calculated based on the sum of the diameters. From each total, the ratio of the area of the non-rubbing portion to the area of the polishing surface is A, the ratio of the area of the rubbing portion to the area of the polishing surface is B, and the ratio A
/ (A + B) (= r) was calculated. ~ Average particle size of inorganic particles constituting the molded body for polishing ~ According to the observation of the microstructure of the polishing surface of the molded body for polishing, the average particle size is calculated on the number basis by the intercept method considering only the inorganic particle portion. It was ~ Grain size distribution of the rubbing part of the polishing compact ~ According to the observation of the fine structure of the polishing surface of the polishing compact, the particle size is calculated by the intercept method considering only the inorganic particle part, and a circle is assumed. Then, the area conversion was carried out to obtain an area-based particle size distribution and an average particle size. -Structure of the rubbing portion of the polishing molded body-A scanning electron microscope observation was performed according to the observation of the fine structure of the polishing surface of the polishing molded body, and the pores and inorganic particle portions of 1 μm or less were considered. By the intercept method, the ratio of the area of the pores in the rubbing portion to the area of the rubbing portion was calculated from the ratio of the line length crossing each of the inorganic particles and the pore portion of 1 μm or less. -Area ratio of alumina particles in the rubbing portion of the polishing molded body-Scanning electron microscope observation is performed according to the microstructure observation of the polishing molded body, and alumina particles and zirconia particles containing a stabilizer are considered. It was determined by the intercept method. -Structure of the non-rubbed portion of the polishing compact-By scanning electron microscope observation according to the observation of the fine structure of the polishing surface of the polishing compact, and by the intercept method in consideration of pores larger than 1 μm. The proportion of the non-rubbed portion was calculated from the proportion of the line length crossing the pore portion larger than 1 μm. -Crystal phase fraction of the surface involved in polishing of the molded body for polishing-X-ray diffractometer (manufactured by Mac Science Co., model: MXP-
X-ray diffraction test (CuKα ray, 40 kV,
30 mA) was performed, and the respective diffraction integrated intensities of the surfaces of the zirconia-containing monoclinic, tetragonal, and cubic phases of the stabilizer described in the following equation were measured and determined by the following equation.

【0061】単斜晶相分率(%)={IM(111)+
M(11−1)}/{IM(111)+IM(11−
1)+IT+C(111)}×100 上記の式において、安定化剤を含有するジルコニアの単
斜晶相の(111)、(11−1)面の回折積分強度を
それぞれ、IM(111)、IM(11−1)、正方晶相
(111)と立方晶相(111)の回折積分強度の和を
T+C(111)とする。 〜圧縮強度〜 JIS−R−1608に準拠し、10mm×10mm×
7mm(厚さ)の試料を作製し、島津オートグラフIS
−10T(島津製作所製)を用い、クロスヘッド速度
0.5mm/分で負荷を加えて測定した。 〜研磨用成形体の減耗率の評価〜 実施例、比較例については、表1、表3、表5に示した
特性の研磨用成形体(直径25mm、厚さ10mmの円
柱状)を、研磨装置PLANOPOL/PEDEMAX
2(Struers製)の下定盤(直径300mm)に
100個装着し、研磨用成形体の表面を平坦に整え、下
定盤回転数300rpmで評価を実施した。減耗率を評
価する前に以下に示した研磨液を用いて研磨速度を求
め、1バッチ毎に研磨液を交換しながらこれを続けて研
磨速度が安定化してから減耗率の評価を開始した。被研
磨材料として石英基板(45mm×45mm角)、研磨
液を用いて、流量200ml/分で流通させながら研磨
液を交換せずに連続的に研磨し、減耗率を算出した。同
時に研磨用成形体の消耗状況を単位時間の厚さ変化量と
して測定した。この消耗が著しく実用に供し得ない場合
を×、許容範囲内である場合を○とした。
[0061] monoclinic fraction (%) = {I M ( 111) +
I M (11-1)} / { I M (111) + I M (11-
1) + IT + C (111)} × 100 In the above formula, the diffraction integrated intensities of the (111) and (11-1) planes of the monoclinic phase of zirconia containing a stabilizer are respectively I M ( 111), I M (11-1), and the sum of the diffraction integrated intensities of the tetragonal phase (111) and the cubic phase (111) is I T + C (111). -Compressive strength-Based on JIS-R-1608, 10 mm x 10 mm x
A 7 mm (thickness) sample was prepared, and Shimadzu Autograph IS
Using a -10T (manufactured by Shimadzu Corporation), a load was applied at a crosshead speed of 0.5 mm / min for measurement. -Evaluation of Depletion Rate of Polishing Molded Body-For Examples and Comparative Examples, polishing molded bodies having the characteristics shown in Tables 1, 3 and 5 (columns having a diameter of 25 mm and a thickness of 10 mm) were polished. Device PLANOPOL / PEDEMAX
2 (manufactured by Struers) was mounted on a lower platen (diameter 300 mm) of 100 pieces, the surface of the molded article for polishing was flattened, and evaluation was carried out at a lower platen rotation speed of 300 rpm. Before evaluating the wear rate, the polishing rate was obtained using the polishing solution shown below, and this was continued while exchanging the polishing solution for each batch, and then the polishing rate was stabilized, and then the evaluation of the wear rate was started. Using a quartz substrate (45 mm × 45 mm square) as a material to be polished and a polishing liquid, polishing was continuously performed without changing the polishing liquid while flowing at a flow rate of 200 ml / min, and the wear rate was calculated. At the same time, the consumption of the polishing compact was measured as the amount of change in thickness per unit time. The case where this wear was not practically applicable was marked with x, and the case where it was within the allowable range was marked with o.

【0062】なお、研磨液には研磨用成形体を構成する
無機粒子の平均粒子径に対して約3倍の平均粒子径を有
するアルミナ砥粒を10重量%含有する水溶液を用い
た。〜減耗率〜被研磨材料の研磨量(体積換算)と研磨
用成形体の消耗量(体積換算)から下式により求めた。
As the polishing liquid, an aqueous solution containing 10% by weight of alumina abrasive grains having an average particle diameter about 3 times the average particle diameter of the inorganic particles constituting the polishing compact was used. -Ablation rate-It was calculated by the following formula from the polishing amount (volume conversion) of the material to be polished and the consumption amount (volume conversion) of the polishing compact.

【0063】 減耗率=研磨用成形体の消耗量/被研磨材料の研磨量 この減耗率が実用に供し得ない場合を×、許容範囲内で
ある場合を○とし、比較例2の減耗率を基準(1.0)
として相対値で示した。 <研磨用成形体の製造>表1、表3、表5に示す特性の
粉末を原料とし、場合によっては有機物粉末(例えば、
ポリビニルアルコール粉末、馬鈴薯でんぷん、メタクリ
ル酸ブチル粉末、パラフィンワックス粉末などの1種類
以上)を混合し、その粉末を50〜3000kg/cm
2の圧力で成形した後、最終的に700〜1700℃で
焼成して研磨用成形体を得た。これらの研磨用成形体を
前記記載の方法により評価し、その結果を表1、表2、
表5に原料の成分と共に示す。 <研磨用成形体による研磨とその評価> 実施例1〜9、比較例1〜7 石英(形状:45mm×45mm角)を被研磨材料と
し、研磨用成形体及び研磨液を用い、前記記載の研磨用
成形体の減耗率の評価に準拠して研磨した。結果を表2
に示した。
Abrasion rate = abrasion amount of abrasive compact / abrasion amount of material to be abraded: When this abrasion rate cannot be put to practical use, x: When the abrasion rate is within the allowable range, the abrasion rate of Comparative Example 2 is represented. Standard (1.0)
Is shown as a relative value. <Manufacture of molded article for polishing> Powders having the characteristics shown in Tables 1, 3, and 5 are used as raw materials, and in some cases, organic powder (for example,
Polyvinyl alcohol powder, potato starch, butyl methacrylate powder, paraffin wax powder, etc.) are mixed, and the powder is mixed at 50 to 3000 kg / cm.
After molding at a pressure of 2 , it was finally fired at 700 to 1700 ° C. to obtain a molded body for polishing. These polishing compacts were evaluated by the method described above, and the results are shown in Tables 1 and 2,
Table 5 shows the components of the raw materials. <Polishing by Polishing Molded Body and Evaluation Thereof> Examples 1 to 9 and Comparative Examples 1 to 7 Quartz (shape: 45 mm × 45 mm square) was used as a material to be polished, and a polishing molded body and a polishing liquid were used and described above. Polishing was performed according to the evaluation of the wear rate of the molded article for polishing. The results are shown in Table 2.
It was shown to.

【0064】以上の実施例と比較例から、以下のことが
分かる。
From the above examples and comparative examples, the following can be seen.

【0065】実施例1〜9と比較例6及び比較例7とを
比べると、従来法に準じた比較例6及び比較例7におい
て、比較例6からは本発明の実施例に記載の研磨用成形
体で得られる表面精度に近付けると研磨速度で劣り、比
較例7からは本発明の実施例に記載の研磨速度に近付け
ると表面精度で劣ることが分かる。つまり、実施例に係
る本発明の研磨用成形体は、従来法に係る比較例6及び
比較例7に対し、研磨速度と表面精度を両立させている
ことが分かる。
Comparing Examples 1 to 9 with Comparative Example 6 and Comparative Example 7, in Comparative Example 6 and Comparative Example 7 according to the conventional method, from Comparative Example 6 to the polishing described in Examples of the present invention. It can be seen that the polishing rate is inferior when the surface precision obtained by the molded body is approximated, and the surface precision is inferior when Comparative Example 7 is close to the polishing rate described in the example of the present invention. In other words, it can be seen that the polishing compact of the present invention according to the example has both the polishing rate and the surface accuracy in comparison with Comparative Examples 6 and 7 according to the conventional method.

【0066】また、実施例と比較例から研磨用成形体の
中でも以下のことが分かる。
Further, from the examples and the comparative examples, the following can be found among the molded articles for polishing.

【0067】実施例1〜6、比較例1〜3を比べると、
実施例1〜6の方が比較例1〜3よりも減耗率が小さく
抑えられていることが分かる。
Comparing Examples 1 to 6 and Comparative Examples 1 to 3,
It can be seen that the wear rate of Examples 1 to 6 is suppressed to be smaller than that of Comparative Examples 1 to 3.

【0068】実施例7と比較例4〜5を比べると、実施
例7の方が比較例4〜5よりも減耗率が小さく抑えられ
ていることが分かる。
Comparing Example 7 with Comparative Examples 4 to 5, it can be seen that the wear rate of Example 7 is suppressed to be smaller than that of Comparative Examples 4 to 5.

【0069】実施例8〜9と比較例6〜7を比べると、
実施例8〜9の方が減耗率が小さく抑えられていること
が分かる。
Comparing Examples 8-9 with Comparative Examples 6-7,
It can be seen that the wear rate is suppressed to be smaller in Examples 8 to 9.

【0070】実施例7〜9と比較例4を比べると、比較
例4では研磨速度は高いものの、研磨用成形体の消耗が
著しくなることが分かる。
Comparing Examples 7 to 9 with Comparative Example 4, it can be seen that in Comparative Example 4, although the polishing rate is high, the abrasion of the polishing compact is remarkable.

【0071】[0071]

【表1】 [Table 1]

【表2】 [Table 2]

【表3】 [Table 3]

【表4】 [Table 4]

【表5】 [Table 5]

【表6】 [Table 6]

【発明の効果】本発明によれば、半導体基板、酸化物単
結晶基板、各種ガラス基板、石英ガラス基板、セラミッ
クス基板等の基板材料や精密加工を要する光学材料など
の仕上げ前工程(ラッピング工程)に主として適用で
き、所定の表面精度に被研磨材料表面を一層高速でで
き、このような特性が安定している。また、処理におけ
る耐久性もあるため有用である。
According to the present invention, a pre-finishing process (lapping process) for a substrate material such as a semiconductor substrate, an oxide single crystal substrate, various glass substrates, a quartz glass substrate, a ceramics substrate, or an optical material that requires precision processing. It can be mainly applied to, and the surface of the material to be polished can be moved at a higher speed with a predetermined surface accuracy, and such characteristics are stable. It is also useful because it has durability in processing.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の研磨用成形体の研磨面の一部を模式的
に示す概念図である。
FIG. 1 is a conceptual diagram schematically showing a part of a polishing surface of a polishing molded body of the present invention.

【図2】図1中のXからX’の方向での断面を示す図で
ある。
FIG. 2 is a view showing a cross section in the direction from X to X ′ in FIG.

【符号の説明】[Explanation of symbols]

図1及び図2では、図中の符号は共通に用いられてい
る。 1:研磨用成形体 2:摺擦部分 3:非摺擦部分
In FIGS. 1 and 2, the reference numerals in the drawings are commonly used. 1: Abrasive molded body 2: Rubbed portion 3: Non-rubbed portion

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/304 622 B24B 37/04 A // B24B 37/04 C04B 35/10 E (72)発明者 近藤 知 神奈川県横浜市青葉区たちばな台2−7− 3−B−409 (72)発明者 工藤 正行 東京都町田市中町3−18−6 (72)発明者 横溝 祐幸 神奈川県横浜市旭区若葉台1−2−901 (72)発明者 浅野 睦己 神奈川県相模原市旭町23−4−508 Fターム(参考) 3C058 AA02 AA09 CB01 CB03 DA17 3C063 AB05 BA02 BA22 BA24 BB03 BB07 BC01 BC08 BD01 CC02 CC19 EE10 FF08 FF23 4G030 AA12 AA17 AA36 BA19 CA01 CA04 CA09 GA04 GA05 GA11 GA14 GA22 5D112 AA02 BA09 GA14 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/304 622 B24B 37/04 A // B24B 37/04 C04B 35/10 E (72) Inventor Kondo Chi 2-7-3-B-409 Tachibanadai, Aoba-ku, Yokohama-shi, Kanagawa Prefecture (72) Masayuki Kudo 3-18-6 Nakamachi, Machida-shi, Tokyo (72) Yuko Yokomizo 1-Wakabadai, Asahi-ku, Yokohama-shi, Kanagawa 2-901 (72) Inventor Mutsumi Asano 23-4-508 F-Term (reference) 3-4-508 Asahi-machi, Sagamihara-shi, Kanagawa 3C058 AA02 AA09 CB01 CB03 DA17 3C063 AB05 BA02 BA22 BA24 BB03 BB07 BC01 BC08 BD01 CC02 CC19 EE10 FF08 FF23 4G030A AA36 BA19 CA01 CA04 CA09 GA04 GA05 GA11 GA14 GA22 5D112 AA02 BA09 GA14

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】無機粒子からなる研磨用成形体であって、
前記研磨用成形体の研磨に携わる面に摺擦部分と非摺擦
部分とを有し、前記摺擦部分に存在する細孔が1μm以
下の径からなると共にその面積が摺擦部分の全面積の1
5%未満であり、さらに非摺擦部分の面積が研磨に携わ
る面の全面積に対して20%以上60%以下である研磨
用成形体において、当該無機粒子がアルミナと安定化剤
を含有するジルコニアから主としてなり、当該研磨用成
形体の摺擦部分を構成する無機粒子の粒子径の60%以
上が5μm以下である研磨用成形体であり、かつアルミ
ナ粒子の粒子径の60%以上が5μm以下、安定化剤を
含有するジルコニア粒子の粒子径の60%以上が5μm
以下であり、当該研磨用成形体を構成するアルミナ粒子
の面積割合をX、安定化剤を含有するジルコニア粒子の
面積割合をYとしたときに、0.25≦X/(X+Y)
≦0.95であることを特徴とする研磨用成形体。
1. A molded article for polishing comprising inorganic particles, comprising:
The surface of the molded article for polishing that is involved in polishing has a rubbing portion and a non-rubbing portion, and the pores present in the rubbing portion have a diameter of 1 μm or less and the area thereof is the entire area of the rubbing portion. Of 1
In a molded article for polishing, the content of which is less than 5% and the area of the non-rubbing portion is 20% or more and 60% or less of the total area of the surface involved in polishing, the inorganic particles contain alumina and a stabilizer. A polishing compact mainly composed of zirconia, in which 60% or more of the particle diameter of inorganic particles constituting the rubbing portion of the polishing compact is 5 μm or less, and 60% or more of the particle diameter of alumina particles is 5 μm. Below, 60% or more of the particle diameter of zirconia particles containing a stabilizer is 5 μm.
0.25 ≦ X / (X + Y), where X is the area ratio of the alumina particles constituting the polishing compact and Y is the area ratio of the zirconia particles containing the stabilizer.
A molded article for polishing, wherein ≦ 0.95.
【請求項2】請求項1に記載の研磨用成形体において、
当該研磨用成形体の非摺擦部分の細孔径の20%以上が
10μm以上の径を有していることを特徴する研磨用成
形体。
2. The molded article for polishing according to claim 1, wherein
20% or more of the pore diameter of the non-rubbing part of the said grinding | polishing molded object has a diameter of 10 micrometer or more.
【請求項3】請求項2に記載の研磨用成形体において、
当該研磨用成形体の非摺擦部分の細孔径の20〜80%
が1〜10μmであることを特徴する研磨用成形体。
3. The molded article for polishing according to claim 2,
20 to 80% of the pore diameter of the non-rubbed portion of the polishing compact
Is 1 to 10 μm.
【請求項4】請求項1〜3に記載の研磨用成形体におい
て、当該研磨用成形体を構成する安定化剤を含有するジ
ルコニアの単斜晶率が5%以下であることを特徴とする
研磨用成形体。
4. The polishing compact according to any one of claims 1 to 3, wherein the monoclinic crystal ratio of zirconia containing a stabilizer constituting the polishing compact is 5% or less. Molded body for polishing.
【請求項5】請求項4に記載の研磨用成形体において、
当該研磨用成形体を構成する安定化剤を含有するジルコ
ニアの安定化剤がイットリアであることを特徴とする研
磨用成形体。
5. The molded article for polishing according to claim 4,
A zirconia stabilizer containing a stabilizer, which constitutes the abrasive compact, is yttria.
【請求項6】請求項5に記載の研磨用成形体において、
当該研磨用成形体を構成する安定化剤を含有するジルコ
ニアの安定化剤のイットリア量がイットリア量とジルコ
ニア量の総和に対して3〜8重量%であることを特徴と
する研磨用成形体。
6. The molded article for polishing according to claim 5,
A molded article for polishing, characterized in that the yttria amount of the stabilizer for zirconia containing the stabilizer which constitutes the molded article for polishing is 3 to 8% by weight based on the total amount of yttria and zirconia.
【請求項7】請求項1〜6に記載の研磨用成形体と付帯
部品から構成されることを特徴とする研磨用定盤。
7. A polishing platen comprising the molded body for polishing according to claim 1 and an accessory component.
JP2001363271A 2001-11-28 2001-11-28 Polishing compact and polishing surface plate using the same Pending JP2003165058A (en)

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Country Link
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JP2017521249A (en) * 2014-07-16 2017-08-03 マゴトー アンテルナショナル(ソシエテ アノニム) Ceramic grains and method for producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084337A (en) * 2011-09-30 2013-05-09 Hoya Corp Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording/reproducing device
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