JP2002018702A - Polishing molding and polishing surface table using the same - Google Patents

Polishing molding and polishing surface table using the same

Info

Publication number
JP2002018702A
JP2002018702A JP2000205580A JP2000205580A JP2002018702A JP 2002018702 A JP2002018702 A JP 2002018702A JP 2000205580 A JP2000205580 A JP 2000205580A JP 2000205580 A JP2000205580 A JP 2000205580A JP 2002018702 A JP2002018702 A JP 2002018702A
Authority
JP
Japan
Prior art keywords
polishing
polished
molded article
oxide
rubbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000205580A
Other languages
Japanese (ja)
Inventor
Toshihito Kuramochi
豪人 倉持
Satoru Kondo
知 近藤
Mutsumi Asano
睦己 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Priority to JP2000205580A priority Critical patent/JP2002018702A/en
Publication of JP2002018702A publication Critical patent/JP2002018702A/en
Pending legal-status Critical Current

Links

Landscapes

  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a polishing molding and a polishing surface table using the polishing molding applicable to a machining process and a CMP process for polishing a substrate material for a semiconductor substrate, an oxide monocrystal substrate, various glass substrates, a quartz glass substrate or a ceramic substrate, an optical material requiring precision machining, and the like to attain a polished material surface of high accuracy at much higher speed and to permit stable work without degrading the characteristic even in polishing. SOLUTION: This polishing molding formed of inorganic grains has a sliding- rubbing part and a non-sliding-rubbing part on a face concerned with polishing. Pores existing in the sliding-rubbing part have a diameter of 1 μm or less, and its area is 15-75% of the whole area of the sliding-rubbing part. Further, the area of the non-sliding-rubbing part is 20-80% of the whole area of the face concerned with polishing. The polishing surface table using such a polishing molding is used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、シリコンウエハ、
酸化物単結晶基板、化合物半導体基板、各種ガラス基
板、石英ガラス基板、セラミックス基板等の基板材料や
光学材料などを研磨する加工プロセスや化学機械研磨
(CMP)プロセスで使用される研磨用成形体及びそれ
を用いた研磨用定盤に関するものである。
TECHNICAL FIELD The present invention relates to a silicon wafer,
Polishing molded products used in a processing process for polishing substrate materials such as oxide single crystal substrates, compound semiconductor substrates, various glass substrates, quartz glass substrates, ceramic substrates and optical materials, and in a chemical mechanical polishing (CMP) process; The present invention relates to a polishing platen using the same.

【0002】[0002]

【従来の技術】光学、エレクトロニクスなどの産業の進
展に伴い、磁気ディスク、半導体基板、単結晶材料、光
学材料等の加工に対する要求は非常に厳しくなってきて
おり、電子関係部品の仕上げ加工では材料の表面に遊離
砥粒を含有した研磨液を連続的に流しながら不織布タイ
プやスウェードタイプ、ウレタン等のポリッシングパッ
ドで磨かれていた。この際に使用される遊離砥粒として
は、酸化アルミニウム、酸化ケイ素、酸化セリウム、酸
化ジルコニウム、酸化鉄、酸化チタン、酸化マンガン、
酸化クロム、酸化マグネシウム、酸化錫、炭化ケイ素な
どが知られている。
2. Description of the Related Art With the development of industries such as optics and electronics, demands for processing magnetic disks, semiconductor substrates, single crystal materials, optical materials, and the like have become extremely strict. Was polished with a polishing pad of a nonwoven fabric type, a suede type, urethane, etc. while continuously flowing a polishing liquid containing free abrasive grains on the surface of the substrate. As the free abrasive used at this time, aluminum oxide, silicon oxide, cerium oxide, zirconium oxide, iron oxide, titanium oxide, manganese oxide,
Chromium oxide, magnesium oxide, tin oxide, silicon carbide and the like are known.

【0003】しかしながら、従来の研磨布を用いた研磨
方法により研磨された材料(以下、研磨加工の対象とさ
れる材料を、「被研磨材料」という。)では、研磨布の
表面が柔らかいために被研磨材料の端部等の角が研磨中
に研磨され過ぎ、被研磨材料の全面を一様に研磨できな
いという非効率的な仕上がりとなってしまう欠点があっ
た。
However, in the case of a material polished by a conventional polishing method using a polishing cloth (hereinafter, a material to be polished is referred to as a "material to be polished"), the polishing cloth has a soft surface. There is a disadvantage in that the corners of the material to be polished are polished excessively during polishing and the entire surface of the material to be polished cannot be uniformly polished, resulting in an inefficient finish.

【0004】さらに、研磨布を用いた従来の研磨方法で
は遊離砥粒を含まない研磨液、例えばpHを調製した水
等を用いることがほとんどの場合でできないために、遊
離砥粒を含む研磨液を大量に使用する必要があり、その
結果、遊離砥粒を大量に含有する研磨廃液が生じ、その
処理等については研磨処理の効率、廃液処理の設備面、
環境への影響を考慮すると改善されるべきものであっ
た。
Further, in most cases, a conventional polishing method using a polishing cloth cannot use a polishing liquid containing no free abrasive grains, for example, water or the like whose pH has been adjusted. It is necessary to use a large amount of, as a result, a polishing waste liquid containing a large amount of free abrasive grains is generated, regarding the processing and the like, the efficiency of the polishing treatment, the equipment surface of the waste liquid treatment,
Considering the impact on the environment, it should be improved.

【0005】このような課題に対し、例えば特開平4−
256581号公報には砥粒粒子を、結合剤として用い
た合成樹脂により固定化した固定砥石を研磨用として用
いる固定方式の研磨方法が提案されている。これによれ
ば、固定砥石を用いるために研磨布を用いた従来の研磨
方法で生じていた被研磨材料の全面を一様に研磨できな
いという課題に対して効果的であることが示されてい
る。
To solve such a problem, for example, Japanese Patent Laid-Open No.
Japanese Patent Publication No. 256581 proposes a fixed-type polishing method using a fixed whetstone in which abrasive grains are fixed with a synthetic resin used as a binder for polishing. According to this, it has been shown that this method is effective against the problem that the entire surface of the material to be polished cannot be uniformly polished, which has occurred in the conventional polishing method using a polishing cloth because a fixed whetstone is used. .

【0006】このような有機質の結合剤を用いる方法の
他にも無機質の結合剤を用いたビトリファイド砥石や金
属を結合剤に用いたメタルボンド砥石などが開示されて
おり、合成樹脂を結合剤に用いた場合と同様に研磨布を
用いた従来の研磨方法で生じていた被研磨材料の全面を
一様に研磨できないという課題に対して効果的であるこ
とが示されている。
In addition to the method using an organic binder, a vitrified grindstone using an inorganic binder and a metal bond grindstone using a metal as a binder are disclosed. It is shown that this method is effective for the problem that the entire surface of the material to be polished cannot be uniformly polished, which has been caused by the conventional polishing method using a polishing cloth as in the case of using the polishing pad.

【0007】しかしながら、このような砥石では砥粒が
結合剤を介して固定されていることから、その結合剤が
研磨に携わる面にも存在するためにいわゆる目詰まりと
同じ状況を発生しやすく、研磨効率、生産性が低くなっ
てしまっていた。さらに、無機物や有機物等の結合剤に
よる固定砥石の製造においては微細な砥粒を砥石中に均
一分散させることが極めて困難であり、微細な砥粒を用
いても見掛け上粗大な砥粒を用いた場合と同様になり、
被研磨材料表面に欠陥を生じやすく、微細な砥粒を均一
分散させるために用いる砥粒量を低減すると研磨速度が
遅く、研磨効率、生産性が低くなってしまっていた。ま
た、結合剤にアルカリ金属等の不純物を多く含有するガ
ラス質等の無機物、樹脂等の有機物、金属等を用いるた
め、研磨加工条件に依っては研磨加工プロセスでの被研
磨材料への固定砥石からの不純物混入の影響も懸念され
ていた。
However, in such a grindstone, since the abrasive grains are fixed via a binder, the binder is also present on the surface involved in polishing, so that the same situation as so-called clogging is likely to occur. Polishing efficiency and productivity have been reduced. Furthermore, it is extremely difficult to uniformly disperse fine abrasive grains in a grinding stone in the production of a fixed grinding stone using a binder such as an inorganic substance or an organic substance. Will be the same as if
Defects are liable to occur on the surface of the material to be polished, and if the amount of abrasive particles used for uniformly dispersing fine abrasive particles is reduced, the polishing rate is slow, and the polishing efficiency and productivity are reduced. Further, since inorganic materials such as vitreous materials containing a large amount of impurities such as alkali metals as binders, organic materials such as resins, metals and the like are used, depending on polishing conditions, a fixed grindstone to a material to be polished in a polishing process is used. There was also a concern about the effect of impurity contamination from the air.

【0008】そこで、本発明者らは、例えば特開平10
−264015号公報に開示されるように、無機砥粒の
一種であるシリカから主としてなる研磨用成形体が研磨
加工プロセスに適用できることを見い出し、前記課題を
解決するべく検討し、その結果以下の知見を見い出し
た。
Accordingly, the present inventors have disclosed, for example,
As disclosed in Japanese Unexamined Patent Publication (Kokai) No. -264015, it has been found that a molded body for polishing mainly composed of silica, which is a kind of inorganic abrasive grains, can be applied to a polishing process, and studied to solve the above-mentioned problems. I found

【0009】1)研磨用成形体の弾性率が研磨布と比較
して大きいため、被研磨材料の端部等の角が研磨中に研
磨され過ぎることが非常に少なくなり、被研磨材料全面
を一様に研磨することができる。
1) Since the elastic modulus of the molded article for polishing is larger than that of the polishing cloth, the corners of the material to be polished are less likely to be excessively polished during polishing, and the entire surface of the material to be polished is It can be polished uniformly.

【0010】2)研磨用成形体の研磨に携わる表面が、
その原料であるシリカ微粉末により粗面となっていてシ
リカ粒子間に多数の細孔が存在するため、研磨加工にお
けるいわゆる目詰まりの発生を抑制することができる。
[0010] 2) The surface involved in polishing of the molded article for polishing is
Since the surface is roughened by the silica fine powder as a raw material and a large number of pores exist between the silica particles, so-called clogging in polishing can be suppressed.

【0011】3)研磨用成形体に結合剤を含まないので
研磨加工プロセスにおいても耐熱性、耐薬品性等があ
り、そのため研磨液をその沸点付近の温度までの範囲で
使用することやその種類等を適宜選択して最適な研磨加
工プロセスとすることで、研磨効率を高めることができ
る。
3) Since the molded body for polishing contains no binder, it has heat resistance, chemical resistance and the like even in the polishing process. Therefore, it is necessary to use the polishing liquid up to a temperature near its boiling point and its type. The polishing efficiency can be increased by appropriately selecting the above and the like to obtain the optimum polishing process.

【0012】4)研磨用成形体が砥粒として用いられる
シリカから構成されており、研磨加工プロセスにおい
て、研磨用成形体に起因する被研磨材料への不純物の影
響を抑制することができる。
4) Since the polishing compact is made of silica used as abrasive grains, it is possible to suppress the influence of impurities on the material to be polished due to the polishing compact in the polishing process.

【0013】5)研磨された被研磨材料の仕上がりが従
来の研磨布を用いた方法と同程度であり、研磨速度の面
でも同等以上であって、さらに研磨加工中においても研
磨性能の経時的な劣化が少ない。
5) The finish of the polished material is substantially the same as that of the conventional method using a polishing cloth, and the polishing rate is equal to or higher than that of the conventional method. Little deterioration.

【0014】6)研磨用成形体の研磨に携わる表面が、
その原料であるシリカ粉末により粗面となっており、こ
れと被研磨材料とが直接接触するために、遊離砥粒を含
まない研磨液を使用して基板材料等の研磨加工プロセス
への適用も可能となる。
6) The surface involved in polishing the molded article for polishing is
Since the surface is roughened by the silica powder that is the raw material, and the material to be polished comes into direct contact, it can be applied to the polishing process of substrate materials using a polishing liquid that does not contain free abrasive grains. It becomes possible.

【0015】7)たとえ遊離砥粒を含有する研磨剤、例
えば酸化アルミニウム、酸化ケイ素、酸化セリウム、酸
化ジルコニウム、酸化鉄、酸化チタン、酸化マンガン、
酸化クロム、酸化マグネシウム、酸化錫、炭化ケイ素等
の1種あるいはそれらの混合物など通常用いられている
ものを遊離砥粒として含有する研磨剤を用いた場合で
も、従来の研磨布を用いた方法よりも希薄な遊離砥粒濃
度で十分に速い研磨速度となる。
7) An abrasive containing free abrasive grains, for example, aluminum oxide, silicon oxide, cerium oxide, zirconium oxide, iron oxide, titanium oxide, manganese oxide,
Even when using an abrasive containing free abrasive grains such as one of chromium oxide, magnesium oxide, tin oxide, silicon carbide, or a mixture thereof, a conventional polishing cloth is used. However, a sufficiently high polishing rate can be obtained at a low free abrasive particle concentration.

【0016】また、特開平10−337669号公報に
は無機砥粒の焼成のみにより構成した砥石が開示されて
いる。これによれば、砥石を構成する材質や粒径、気孔
率、吸水率について記載されており、特開平10−26
4015号公報と同様の効果が得られることが示されて
いるが、被研磨材料として例示されているシリコンウエ
ハの表面精度は中心線平均粗さで3nm程度であり、研
磨速度に関しては認識されていないため言及されていな
い。
Japanese Patent Application Laid-Open No. 10-337669 discloses a grindstone constituted only by firing inorganic abrasive grains. According to this document, the material, particle size, porosity, and water absorption of the grindstone are described.
Although it is shown that the same effect as that of Japanese Patent No. 4015 is obtained, the surface accuracy of a silicon wafer exemplified as a material to be polished is about 3 nm in center line average roughness, and the polishing rate is recognized. Not mentioned because there is no.

【0017】これに対し、先の特開平10−26401
5号公報では、シリコンウエハの表面精度を万能表面形
状測定器SE−3C(小坂研究所製)を用いて測定した
結果を示してあるが、装置の測定限界値であるので、本
発明者らはより精度良く測定するため、原子間力顕微鏡
(AFM)SPI3600(SII社製)を用いて測定
した。その結果、中心線平均粗さは0.6〜1nmであ
り、特開平10−337669号公報に記載のものより
も優れた表面精度を得ることが可能であることが分かっ
た。
On the other hand, Japanese Patent Application Laid-Open No. 10-26401
Japanese Patent Application Laid-Open No. 5 (1999) -2005 discloses the results of measuring the surface accuracy of a silicon wafer using a universal surface shape measuring instrument SE-3C (manufactured by Kosaka Laboratories). Was measured using an atomic force microscope (AFM) SPI3600 (manufactured by SII) for more accurate measurement. As a result, it was found that the center line average roughness was 0.6 to 1 nm, and it was possible to obtain a surface accuracy superior to that described in JP-A-10-337669.

【0018】このように本発明者らが特開平10−26
4015号公報に開示した無機砥粒の一種であるシリカ
から主としてなる研磨用成形体は、シリコンウエハ、酸
化物基板、化合物半導体基板、各種ガラス基板、石英ガ
ラス基板、セラミックス基板等の基板材料や光学材料な
どを研磨する加工プロセスやCMPプロセスに対して非
常に好適なものであるが、被研磨材料によっては十分な
特性を得ることが難しい場合があり、被研磨材料の特徴
により適宜選択する必要がある。例えば、本発明者らは
被研磨材料の硬度や化学的反応性等を考慮して検討して
きた。
As described above, the inventors of the present invention disclosed in Japanese Patent Laid-Open No. 10-26
Japanese Patent Application Laid-Open No. 4015 discloses a polishing body mainly composed of silica, which is a kind of inorganic abrasive, is made of a substrate material such as a silicon wafer, an oxide substrate, a compound semiconductor substrate, various glass substrates, a quartz glass substrate, a ceramic substrate, or an optical material. Although it is very suitable for a processing process or a CMP process for polishing a material or the like, it may be difficult to obtain sufficient characteristics depending on the material to be polished. is there. For example, the present inventors have studied in consideration of the hardness and chemical reactivity of the material to be polished.

【0019】[0019]

【発明が解決しようとする課題】このように本発明者ら
は各種被研磨材料を、好適に研磨できる成形体を見い出
してきたが、研磨プロセスの一層の効率化による生産性
の向上、すなわち、各種被研磨材料に対して、高精度な
被研磨材料表面を一層高速で得ることができる研磨用成
形体が望まれていた。さらにこのような研磨特性を研磨
加工プロセスにおいては、安定して作業できるような研
磨用成形体が望まれていた。
As described above, the present inventors have found a molded body capable of suitably polishing various materials to be polished. However, the productivity has been improved by further increasing the efficiency of the polishing process. There has been a demand for a shaped body for polishing capable of obtaining a highly accurate surface of a material to be polished at a higher speed for various materials to be polished. Further, in the polishing process having such polishing characteristics, there has been a demand for a molded body for polishing capable of stably working.

【0020】本発明は、このような課題に鑑みてなされ
たものであり、その目的は半導体基板、酸化物単結晶基
板、各種ガラス基板、石英ガラス基板、セラミックス基
板等の基板材料や精密加工を要する光学材料などを研磨
する加工プロセスやCMPプロセスに適用でき、高精度
な被研磨材料表面を一層高速で得ることのでき、その特
性を研磨加工においても劣化することなく安定的に作業
できる研磨用成形体及びそれを用いた研磨用定盤を提供
することにある。
The present invention has been made in view of such problems, and has as its object to provide substrate materials such as semiconductor substrates, oxide single crystal substrates, various glass substrates, quartz glass substrates, and ceramic substrates, and precision processing. It can be applied to the processing process and CMP process for polishing required optical materials, etc., and can obtain a highly accurate surface of the material to be polished at higher speed, and its characteristics can be stably operated without deteriorating even in polishing process. An object of the present invention is to provide a molded product and a polishing platen using the same.

【0021】[0021]

【課題を解決するための手段】本発明者らは特開平10
−264015号公報や特開平11−104952号公
報に開示されたように、研磨用成形体が特定の細孔構造
を有することで研磨速度を一層向上させることができる
ことを見い出し、水銀圧入法による細孔構造の測定結果
を基にした細孔構造を規定し、研磨用成形体全体の構造
を示した。
Means for Solving the Problems The present inventors have disclosed Japanese Patent Laid-Open No.
As disclosed in JP-A-264015 and JP-A-11-104952, it has been found that the polishing rate can be further improved by the polishing molded body having a specific pore structure. The pore structure was defined based on the pore structure measurement results, and the overall structure of the molded article for polishing was shown.

【0022】さらに、本発明者らは前記課題を解決する
ために鋭意検討を重ねた結果、実質的に無機粒子のみか
らなる研磨用成形体において、研磨用成形体全体の構造
のみならず、研磨用成形体の被研磨材料との研磨に携わ
る面(以下、「研磨面」という。)が特定の微構造を有し
ている場合に、各種被研磨材料に対して高精度な被研磨
材料表面をより一層高速で得ることのできることを見い
出し、かつその微構造、すなわち研磨面の特性が研磨加
工プロセスにおいても一定範囲に保たれていることで、
研磨性能を長期に安定化させることができ、前記課題を
解決し、研磨作業を一層効率化できることを見出し、本
発明を完成するに至った。すなわち、研磨用成形体及び
/又は被研磨材料を摺擦させて被研磨材料を研磨する研
磨加工プロセスにおいて、研磨用成形体と被研磨材料と
が直接接触する摺擦する部分(以下、「摺擦部分」とい
う。)と、研磨加工において被研磨材料と直接接触する
ことはなく、主に研磨加工において用いられる研磨液を
滞留あるいは流通させて摺擦部分へ研磨液を供給すると
見られる部分(以下、「非摺擦部分」という。)とが研磨
用成形体の研磨面側に少なくとも存在し、その構造が特
定の構造となっていると共に、研磨加工の際にその構造
が保持されていることが極めて重要であることを見い出
したのである。
Further, the inventors of the present invention have conducted intensive studies to solve the above-mentioned problems. As a result, not only the structure of the entire polishing compact but also the polishing When the surface of the molded object for polishing with the material to be polished (hereinafter, referred to as a “polishing surface”) has a specific microstructure, the surface of the material to be polished is highly accurate for various materials to be polished. Can be obtained even faster, and its microstructure, that is, the characteristics of the polished surface are maintained within a certain range even in the polishing process,
The present inventors have found that the polishing performance can be stabilized for a long time, the above-mentioned problems can be solved, and the polishing operation can be made more efficient, and the present invention has been completed. That is, in the polishing process of polishing the material to be polished by rubbing the molded body for polishing and / or the material to be polished, a portion where the polishing molded body and the material to be polished are rubbed directly (hereinafter, referred to as “sliding”). A part which is considered to supply the polishing liquid to the rubbing part by staying or flowing the polishing liquid mainly used in the polishing processing without directly contacting the material to be polished in the polishing processing (referred to as "rubbing part"). The non-rubbing portion will be present at least on the polishing surface side of the molded body for polishing, and the structure has a specific structure, and the structure is maintained during polishing. Was found to be extremely important.

【0023】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.

【0024】<研磨用成形体の特性>本発明の研磨用成
形体は、実質的に無機粒子からなる研磨用成形体であっ
て、研磨用成形体の研磨に携わる面に非摺擦部分と摺擦
部分とを有し、摺擦部分に存在する細孔が1μm以下の
径からなると共にその面積が摺擦部分の全面積の15〜
75%であり、さらに非摺擦部分の面積が研磨に携わる
面の全面積に対して20〜80%である研磨用成形体で
ある。
<Characteristics of Polishing Molded Article> The polishing molded article of the present invention is a polishing molded article substantially composed of inorganic particles, and has a non-sliding portion on a surface of the polishing molded article involved in polishing. A rubbing portion, wherein the pores present in the rubbing portion have a diameter of 1 μm or less, and the area thereof is 15 to of the total area of the rubbing portion.
It is a molded article for polishing in which the area of the non-rubbing portion is 20% to 80% with respect to the total area of the surface engaged in polishing.

【0025】本発明の研磨用成形体に用いられる無機粒
子は、被研磨材料との適合性を考慮して適宜選択される
ものであり、具体的には、酸化アルミニウム、酸化ケイ
素、酸化セリウム、酸化ジルコニウム、酸化マンガン、
酸化チタン、酸化マグネシウム、酸化鉄、酸化クロム、
酸化イットリウム等の酸化物や、炭化ケイ素、炭化ホウ
素、窒化ホウ素等の非酸化物を用いることができ、さら
に酸化ジルコニウムについては、安定化剤として酸化イ
ットリウム、酸化スカンジウム、酸化インジウム、酸化
セリウム等の希土類酸化物、酸化マグネシウム、酸化カ
ルシウム等、を固溶させた酸化ジルコニウムも用いるこ
とができる。これらの無機粒子は、1種単独で用いるこ
ともできるが、任意の2種以上を用いてもよい。ここ
で、被研磨材料との適合性とは、例えば被研磨材料の硬
度、靱性等の物理的特性や化学的反応性等の化学的特性
等に対して、要求される被研磨材料の仕上げ表面精度、
平坦性、研磨速度等を総合的に判断して選択されること
を意味する。
The inorganic particles used in the molded article for polishing according to the present invention are appropriately selected in consideration of compatibility with the material to be polished, and specifically include aluminum oxide, silicon oxide, cerium oxide, Zirconium oxide, manganese oxide,
Titanium oxide, magnesium oxide, iron oxide, chromium oxide,
Oxides such as yttrium oxide and non-oxides such as silicon carbide, boron carbide, and boron nitride can be used. Further, as for zirconium oxide, yttrium oxide, scandium oxide, indium oxide, cerium oxide, and the like as a stabilizer. Zirconium oxide in which a rare earth oxide, magnesium oxide, calcium oxide, or the like is dissolved can also be used. These inorganic particles can be used alone or in combination of two or more. Here, the compatibility with the material to be polished means, for example, the physical properties such as hardness and toughness of the material to be polished and the chemical properties such as chemical reactivity, etc. accuracy,
It means that it is selected by comprehensively judging flatness, polishing rate, and the like.

【0026】また、このような無機粒子は、実用的には
平均粒子径が0.005〜2μmのものを用いることが
好ましい。平均粒子径が0.005μmを下回るような
粒子を用いることは後述するように実際上困難であり、
また2μmを上回ると被研磨材料表面に欠陥を生じる等
の問題が生じることがある。
In addition, it is preferable to use such inorganic particles having an average particle diameter of 0.005 to 2 μm for practical use. It is practically difficult to use particles having an average particle size of less than 0.005 μm, as described later.
On the other hand, if the thickness exceeds 2 μm, there may be a problem that a defect occurs on the surface of the material to be polished.

【0027】また、本発明の研磨用成形体には、砥粒粒
子を保持、固定化した合成砥石を得る際に一般的に用い
られる、メタル、ビトリファイド、樹脂類等の結合剤は
含まれていない。すなわち、本発明の研磨用成形体は実
質的に結合剤なしの状態でその形状を保持することがで
き、かつ研磨用としての態様をなすものである。
The abrasive compact of the present invention contains a binder such as metal, vitrified resin, and the like, which is generally used for obtaining a synthetic whetstone holding and fixing abrasive grains. Absent. That is, the molded article for polishing of the present invention can maintain its shape substantially without any binder, and forms an aspect for polishing.

【0028】本発明の研磨用成形体は、前記した無機粒
子から実質的に構成されるものであり、研磨加工プロセ
スにおいては、その研磨面が被研磨材料に直接接触して
研磨作業を行わせるものである。この研磨用成形体は、
研磨面の一部を模式的に示す概念図である図1及び、図1
の一部の断面を示す図2のような構造となっている。
The molded article for polishing according to the present invention is substantially composed of the above-mentioned inorganic particles. In the polishing process, the polishing surface is brought into direct contact with the material to be polished to perform the polishing operation. Things. This abrasive compact is
FIGS. 1 and 2 are conceptual views schematically showing a part of a polished surface.
Has a structure as shown in FIG.

【0029】ここで、研磨用成形体の研磨面にある非摺
擦部分とは、図1及び図2中の3に示されるように、被
研磨材料と直接接触することはなく、主に研磨加工にお
いて用いられる研磨液を滞留あるいは流通させ、摺擦部
分へ研磨液を供給しうる部分であり、1μmより大きい
細孔が存在する。また、研磨用成形体の研磨面にある摺
擦部分とは、図1及び図2中の2に示されるように、前
記の非摺擦部分以外の部分であり、被研磨材料と直接接
触する部分である。尚、これらの非摺擦部分、摺擦部分
は、実施例にも示されるように、研磨用成形体の研磨面
を走査型顕微鏡で観察することで確認できる。
Here, the non-sliding portion on the polishing surface of the molded article for polishing does not come into direct contact with the material to be polished as shown at 3 in FIGS. This is a portion where the polishing liquid used in the processing is retained or circulated and the polishing liquid can be supplied to the rubbing portion, and has pores larger than 1 μm. Further, the rubbing portion on the polishing surface of the molded body for polishing is a portion other than the non-rubbing portion as shown in 2 in FIGS. 1 and 2, and is in direct contact with the material to be polished. Part. Incidentally, these non-sliding portions and sliding portions can be confirmed by observing the polished surface of the molded article for polishing with a scanning microscope as shown in Examples.

【0030】本発明の研磨用成形体の研磨面にある摺擦
部分(図1における2)は、研磨用成形体を構成する無
機粒子と1μm以下の径を有する細孔により構成されて
おり、この1μm以下の径の細孔部分の面積は、摺擦部
分の全面積に対して15〜75%の範囲にあることが好
ましい。この範囲を逸脱して、15%を下回ると研磨加
工する際の研磨速度が低下してしまい、また、75%を
上回ると研磨速度は比較的高く維持されるものの研磨用
成形体の消耗が著しくなるため好ましくない。
The rubbing portion (2 in FIG. 1) on the polishing surface of the molded article for polishing according to the present invention is constituted by inorganic particles constituting the molded article for polishing and pores having a diameter of 1 μm or less. The area of the pores having a diameter of 1 μm or less is preferably in the range of 15 to 75% of the total area of the rubbing parts. Deviating from this range, if it is less than 15%, the polishing rate at the time of polishing decreases. If it exceeds 75%, the polishing rate is maintained relatively high, but the consumption of the molded article for polishing is remarkable. Is not preferred.

【0031】さらに、このような摺擦部分は、平均粒子
径が0.01〜0.5μmの無機粒子と1μm以下の径
を有する細孔により構成されていることがさらに好まし
い。これは、研磨加工において、無機粒子の平均粒子径
が小さいほど得られる被研磨材料の表面精度は、多くの
場合良くなる傾向にあるが、その原料となる無機粒子の
粉末は微細化されると凝集しやすくなり、また実質的に
1次粒子径が0.005μmよりも小さい粉末が得られ
にくいことから、実際上0.005μmよりも小さい平
均粒子径の研磨用成形体も得られにくく、特に平均粒子
径が0.01μmを下回ると研磨用成形体への加工が難
しくなる傾向もあること、また、平均粒子径が0.5μ
mよりも大きい場合にも高精度に研磨は実施できるが、
被研磨材料を特に高精度に仕上げるためには平均粒子径
が0.5μmを上回らない方が好ましいからである。
尚、ここでいう平均粒子径とは、研磨用成形体表面を構
成している無機材料粉末の粒子径を意味しており、例え
ば実施例に記載のように、走査型電子顕微鏡(SEM)
などにより測定できる。
Further, such a rubbing portion is more preferably constituted by inorganic particles having an average particle diameter of 0.01 to 0.5 μm and pores having a diameter of 1 μm or less. This is because, in the polishing process, the surface accuracy of the material to be polished obtained as the average particle diameter of the inorganic particles is smaller tends to be improved in many cases, but when the powder of the inorganic particles as the raw material is refined. Agglomeration is likely to occur, and it is difficult to obtain a powder having a primary particle diameter of less than 0.005 μm. Therefore, it is actually difficult to obtain a polishing molded article having an average particle diameter of less than 0.005 μm. When the average particle diameter is less than 0.01 μm, it tends to be difficult to process the molded body for polishing, and the average particle diameter is 0.5 μm.
Polishing can be performed with high accuracy even when it is larger than m,
This is because, in order to finish the material to be polished with high precision, it is preferable that the average particle diameter does not exceed 0.5 μm.
In addition, the average particle diameter here means the particle diameter of the inorganic material powder constituting the surface of the molded article for polishing, and for example, as described in Examples, a scanning electron microscope (SEM)
It can be measured for example.

【0032】研磨用成形体の研磨面にある非摺擦部分
(図1における3)の面積としては、研磨面の全面積に
対して20〜80%の範囲にあることが好ましい。この
範囲を逸脱して20%を下回ると研磨加工する際の研磨
速度が低くなり、研磨効率が低下してしまい、また、8
0%を上回ると研磨速度は高く維持されるものの、研磨
用成形体の消耗が著しくなるため好ましくない。
The area of the non-sliding portion (3 in FIG. 1) on the polishing surface of the molded article for polishing is preferably in the range of 20 to 80% with respect to the total area of the polishing surface. If the ratio is out of this range and falls below 20%, the polishing rate during polishing decreases, and the polishing efficiency decreases.
If it exceeds 0%, the polishing rate is maintained at a high level, but it is not preferable because the molded article for polishing becomes extremely worn.

【0033】さらに、このような非摺擦部分は、より一
層研磨速度が速くなるため、その構成される細孔の50
%以上が10μm以上の径を有する細孔で構成されてい
ることが好ましい。また、この細孔径の上限は特に限定
されるものではないが、3mmを超える径の細孔が多く
導入されると研磨加工中の破損が多くなりやすいので、
10μm以上の径を有する細孔全体の中、実質的には1
0μm〜3mmの範囲内である細孔が80%以上である
ことが好適である。
Further, since such a non-sliding portion has a much higher polishing rate, 50% of the pores formed therefrom.
% Or more is preferably composed of pores having a diameter of 10 μm or more. In addition, the upper limit of the pore diameter is not particularly limited, but when a large number of pores having a diameter of more than 3 mm are introduced, damage during polishing is likely to increase.
Among all pores having a diameter of 10 μm or more, substantially 1
It is preferable that the pores within the range of 0 μm to 3 mm are 80% or more.

【0034】尚、上記の摺擦部分及び非摺擦部分の面積
は、実施例にも示されるように各部分を走査型電子顕微
鏡等で観察し、構成される無機粒子及び細孔の径をイン
ターセプト法により個数基準で算出した後に、所定の研
磨面の面積当たりに換算して求めることができる。
The area of the above-mentioned rubbing portion and the non-rubbing portion can be determined by observing each portion with a scanning electron microscope or the like, as shown in Examples, and determining the diameters of the inorganic particles and pores formed. After the calculation based on the number by the intercept method, it can be obtained by converting the area per predetermined polishing surface.

【0035】さらに、研磨加工において被研磨材料を均
質に研磨するために、研磨用成形体の研磨面にある摺擦
部分と非摺擦部分との分布状態に注目すれば、図1に示
されるように、被研磨材料を均質に研磨するという効果
が一層顕著となることから、非摺擦部分は研磨面に一様
に分布していることが好ましい。ここで、一様に分布し
ているとは、非摺擦部分が研磨用成形体の研磨面の一定
範囲において、同程度の数あるいは面積割合で存在して
いることを意味する。
Further, in order to uniformly polish the material to be polished in the polishing process, attention is paid to the distribution state of the rubbing portion and the non-rubbing portion on the polishing surface of the molded article for polishing, as shown in FIG. As described above, since the effect of uniformly polishing the material to be polished becomes more remarkable, it is preferable that the non-sliding portions are uniformly distributed on the polished surface. Here, "uniformly distributed" means that the non-rubbing portions are present in the same number or area ratio in a certain range of the polishing surface of the molded article for polishing.

【0036】また、上記の非摺擦部分の研磨面における
分布が研磨加工中においても常に維持されている好まし
く、このことにより被研磨材料の研磨を均質に行うこと
ができるのである。ここで、非摺擦部分の研磨面におけ
る分布は、実施例にも示されるように、研磨用成形体の
研磨面の法線方向に垂直な面で研磨用成形体を切断し、
研磨面の状態を走査型顕微鏡などにより観察できる。
It is preferable that the distribution of the non-sliding portion on the polished surface is always maintained during the polishing process, so that the material to be polished can be polished uniformly. Here, the distribution of the non-rubbing portion on the polishing surface is, as shown in the examples, cutting the polishing body at a plane perpendicular to the normal direction of the polishing surface of the polishing body,
The state of the polished surface can be observed with a scanning microscope or the like.

【0037】以上の点を具体的に示せば、研磨面の面積
に対する非摺擦部分の面積の割合をA、研磨面の面積に
対する摺擦部分の面積の割合をBとし、A/(A+B)
(=r)について算定した場合、0.2≦r≦0.8の
関係にあり、さらに個々のRの値を平均して求められる
r'が、0.3≦r'≦0.7となっており、rの変動が
ここのrの平均値であるr'に対して±10%の範囲内
にあるとより高速で、かつ一層被研磨材料の研磨が均質
に行われる、つまり一層高速で、かつ研磨速度のばらつ
きや、研磨用成形体の消耗等が一層抑制され、研磨性能
の均一性に一層優れることにつながるのでさらに好まし
い。
If the above points are specifically shown, the ratio of the area of the non-sliding portion to the area of the polished surface is A, and the ratio of the area of the rubbing portion to the area of the polished surface is B, and A / (A + B)
(= R), there is a relation of 0.2 ≦ r ≦ 0.8, and r ′ obtained by averaging individual R values is 0.3 ≦ r ′ ≦ 0.7. When the variation of r is within ± 10% of the average value of r, r ′, the polishing is performed more quickly and the material to be polished is more uniformly polished. In addition, variations in the polishing rate, consumption of the molded body for polishing, and the like are further suppressed, which leads to more excellent polishing performance uniformity, which is more preferable.

【0038】本発明の研磨用成形体の研磨面に存在する
摺擦部分及び非摺擦部分は上記のような微構造を有して
おり、このような構造を研磨加工中も保持しておれば、
被研磨材料の研磨を均質に行うこと、すなわち、被研磨
材料の研磨される各部分の間での研磨速度のばらつきを
より小さく抑えることができて均質あるいは平坦性に優
れた被研磨材料を得られ、また、研磨用成形体自体の研
磨面の各部分での消耗についてもばらつきを抑えること
ができるなど、研磨性能の均一性に優れることにつなが
るのである。
The rubbing portion and the non-rubbing portion present on the polishing surface of the molded article for polishing according to the present invention have the above-mentioned microstructure, and such a structure is maintained during polishing. If
Polishing of the material to be polished uniformly, that is, a variation in the polishing rate between each portion to be polished of the material to be polished can be suppressed to be smaller, and a material to be polished having excellent homogeneity or flatness can be obtained. This also leads to excellent uniformity of polishing performance, for example, it is possible to suppress variation in wear of each part of the polishing surface of the polishing compact itself.

【0039】<研磨用成形体の製造法>本発明の研磨用
成形体の製造方法は前記特性を有する研磨用成形体を得
ることのできる方法であれば特に限定されるものではな
く、無機粒子の粉末を成形する、成形の後に焼成等の加
工処理を行うなどの方法を例示できる。
<Method for Producing Polishing Molded Article> The method for producing a polishing molded article of the present invention is not particularly limited as long as it is a method capable of obtaining a polishing molded article having the above characteristics. Examples of the method include forming a powder, and performing a processing such as baking after the molding.

【0040】さらに具体的に本発明の研磨用成形体の製
造法を示すと、原料粉末に圧力をかける等により成形し
て適当な形状、大きさの成形体とし、その後必要に応じ
て加工して研磨に用いられる成形体とするものである。
More specifically, the method for producing a molded article for polishing according to the present invention will be described. The raw material powder is molded into a molded article having an appropriate shape and size by applying pressure or the like, and then processed as necessary. To form a molded body used for polishing.

【0041】ここで、圧力をかけて成形する場合、例え
ばプレス成形等の成形法が例示でき、その圧力条件とし
ては、特に限定されるものではなく、公知の条件にて行
うことができる。また、鋳込み成形、射出成形、押出成
形なども適用できる。
Here, in the case of molding under pressure, for example, a molding method such as press molding can be exemplified, and the pressure condition is not particularly limited, and it can be performed under known conditions. Also, casting, injection molding, extrusion molding and the like can be applied.

【0042】さらに、成形する際の原料粉末の成形性を
向上させるために原料粉末に処理を施してもよい。その
具体的な処理の方法としては、例えば圧密する方法など
が挙げられるが、その条件は特に限定されるものではな
い。また、同様に原料粉末の成形性を向上させるため、
スプレードライ法や転動法などにより造粒したり、バイ
ンダー、ワックス等を添加してもよい。
Further, the raw material powder may be subjected to a treatment in order to improve the formability of the raw material powder at the time of molding. As a specific processing method, for example, a method of consolidation may be mentioned, but the conditions are not particularly limited. Similarly, to improve the moldability of the raw material powder,
Granulation may be performed by a spray drying method, a tumbling method, or the like, or a binder, wax, or the like may be added.

【0043】また、原料粉末より無機粒子からなる成形
体への成形性を向上させるために成形前に原料粉末へワ
ックスやバインダーなどの有機物を添加する場合には、
研磨用成形体への加工に際し、脱脂することが好まし
い。脱脂方法は特に限定されるものではないが、例えば
大気雰囲気下での加熱による脱脂、または窒素、アルゴ
ン、ヘリウムなどの不活性雰囲気中での加熱脱脂などが
挙げられる。このときの雰囲気ガスの圧力は加圧下また
は常圧下、場合によっては減圧下であってもよい。ま
た、同様に成形性を向上させるために水分を添加し、そ
の後の焼成操作前に乾燥させることもできる。
When an organic substance such as a wax or a binder is added to the raw material powder before molding in order to improve the formability of the raw material powder into a molded body composed of inorganic particles,
It is preferable to degrease when processing into a molded article for polishing. The degreasing method is not particularly limited, and examples thereof include degreasing by heating in an air atmosphere, and degreasing by heating in an inert atmosphere such as nitrogen, argon, and helium. At this time, the pressure of the atmosphere gas may be under pressure or under normal pressure, and may be under reduced pressure in some cases. Similarly, it is also possible to add water in order to improve the moldability, and to dry it before the subsequent baking operation.

【0044】さらに、この原料粉末に対して、研磨用成
形体の細孔構造を制御するための細孔を導入するために
造孔剤を混合しても良い。この造孔剤の種類としては、
各種有機物粉末、カーボン粉末等を例示することができ
る。
Further, a pore-forming agent may be added to the raw material powder in order to introduce pores for controlling the pore structure of the molded article for polishing. As the type of this pore former,
Various organic powders, carbon powders and the like can be exemplified.

【0045】次に、成形体、殊にバインダーや造孔剤を
取り除いた成形体は、一般的に強度が脆く、その強度を
上げ、研磨加工に用いるためにその耐久性を向上させる
ために、得られた成形体に対して加熱による焼成等の加
工を行うことが好ましい。しかし、耐久性を向上させる
方法としては、加熱焼成に限定されるものではなく、例
えば成形体の細孔中に物質を導入する方法を採用するこ
ともできる。
Next, the molded article, particularly the molded article from which the binder and the pore-forming agent have been removed, generally has a brittle strength, and in order to increase the strength and to improve the durability for use in polishing, It is preferable to perform processing such as baking by heating on the obtained molded body. However, the method for improving the durability is not limited to heating and baking, and for example, a method of introducing a substance into the pores of a molded article may be employed.

【0046】加熱焼成の場合の焼成条件は特に限定され
るものではないが、焼成温度、焼成時間、焼成プログラ
ム、焼成雰囲気等を適宜選択すればよい。
The firing conditions in the case of heating and firing are not particularly limited, but a firing temperature, a firing time, a firing program, a firing atmosphere and the like may be appropriately selected.

【0047】このように無機粒子からなる成形体より研
磨用成形体への加工方法としては、加熱脱脂、加熱焼
成、機械加工、化学処理、物理処理、あるいはこれらの
組み合わせ等による方法が例示できるが、研磨用成形体
として研磨作業に使用できる強度を付与できる加工方法
であれば特に限定されるものではない。
Examples of a method for processing a molded body made of inorganic particles into a molded body for polishing as described above include a method using heat degreasing, heat baking, machining, chemical treatment, physical treatment, or a combination thereof. The processing method is not particularly limited as long as it is a processing method capable of imparting strength that can be used for polishing work as a molded body for polishing.

【0048】特に研磨用成形体の被研磨材料との研磨に
携わる面が研磨加工中に常に所定の条件範囲内に存在す
るようにすることで物性の均一性に優れた状態にするた
めには以下に示す方法を考慮することが一層好適であ
る。
In particular, it is necessary to ensure that the surface of the molded article for polishing with the material to be polished is always within a predetermined range during the polishing process, so that a state excellent in uniformity of physical properties is obtained. It is more preferable to consider the following method.

【0049】すなわち、研磨に携わる面の微構造を常に
所定条件範囲内に存在させるためには、研磨用成形体中
に、当該研磨用成形体の研磨に携わる面に垂直な方向に
平行な面内において細孔を均一に分散させる必要があ
る。例えば、前記記載の製法においては、造孔剤を混合
する場合にはその粒子径を前記所定範囲内とするため
に、整粒、分級することが望ましい。また、同様に細孔
を均一に分散させるために、造孔剤と原料粉末を当該研
磨用成形体の基材となるべく成形体微構造内において極
力均一に分散させる必要があり、そのために原料粉末を
何らかの手法により造粒して、造孔剤の粒径と相応した
関係、すなわち混合状態を適した状態にする関係とする
ことも一手段となり得る。この場合の粒径の関係は、造
粒粉末の比重、造孔剤の比重、それらの混合比等を考慮
して適宜決定されるべきものである。
That is, in order for the microstructure of the surface involved in polishing to always exist within a predetermined range of conditions, a surface parallel to a direction perpendicular to the surface involved in polishing of the molded body for polishing is provided in the molded body for polishing. It is necessary to uniformly disperse the pores inside. For example, in the above-described production method, when a pore-forming agent is mixed, it is desirable to size and classify the mixture so that the particle size is within the above-mentioned predetermined range. Similarly, in order to uniformly disperse the pores, it is necessary to disperse the pore-forming agent and the raw material powder as uniformly as possible in the microstructure of the molded body as much as possible as a base material of the molded body for polishing. May be granulated by any method to obtain a relationship corresponding to the particle size of the pore-forming agent, that is, a relationship for bringing the mixed state into an appropriate state. In this case, the relationship between the particle diameters should be appropriately determined in consideration of the specific gravity of the granulated powder, the specific gravity of the pore-forming agent, the mixing ratio thereof, and the like.

【0050】また、原料粉末を成形する際に所定の径を
有する有機物や炭素繊維を研磨用成形体の研磨に携わる
面に対して垂直になるように導入する方法や所定の外内
径を有する中空粒子を混合する方法等も例示できる。こ
こで中空粒子の内径は研磨用成形体に導入する細孔径に
準じ、外径、つまり中空粒子の粒子径は当該中空粒子の
中空部分が研磨用成形体の研磨に携わる面に所定の分散
状態となるように考慮された径になる。
Further, when molding the raw material powder, a method of introducing an organic substance or a carbon fiber having a predetermined diameter so as to be perpendicular to a polishing surface of the molded article for polishing, or a hollow having a predetermined outer diameter. A method of mixing particles can also be exemplified. Here, the inner diameter of the hollow particles conforms to the diameter of the pores introduced into the molded article for polishing, and the outer diameter, that is, the particle diameter of the hollow particles, is determined in such a manner that the hollow portion of the hollow particles is in a predetermined dispersed state on the surface involved in polishing of the molded article for polishing. Is the diameter considered so that

【0051】しかしながら、このような方法を敢えて採
らなくとも前記記載の特性を有している研磨用成形体を
製造できれば特に採る必要はないとともにこれらの製法
に限定されるものではない。
However, even if such a method is not dared to be adopted, there is no particular need to employ any method as long as a molded article for polishing having the above-mentioned characteristics can be produced, and the method is not limited to these methods.

【0052】<研磨用定盤の構成>次に、この研磨用成
形体を研磨用の定盤として組み込み、さらにこれを用い
て研磨する方法について説明する。
<Structure of Polishing Surface Plate> Next, a method of assembling the molded body for polishing as a polishing surface plate and further performing polishing using the platen will be described.

【0053】まず、研磨用成形体と研磨用の付帯部品と
を用いて研磨用定盤が形成される。ここで、付帯部品と
は研磨用定盤を構成する種々の材質、形状の構造体であ
り、この付帯部品に対して研磨用成形体を以下に示され
る手法により配置し、固定することで研磨用定盤が形成
される。両者の固定方法としては、接着剤を用いて接着
して固定する方法、付帯部品に凹凸を形成し、その固定
場所へ埋め込む方法など、本発明の目的を達成できる方
法であれば制限なく用いることができる。
First, a polishing surface plate is formed using the polishing molded body and the auxiliary components for polishing. Here, ancillary parts are structures of various materials and shapes constituting a polishing platen, and a molded article for polishing is arranged on this ancillary part by a method described below, and fixed by polishing. A surface plate is formed. As a method for fixing both, a method of bonding and fixing with an adhesive, a method of forming irregularities on ancillary parts and embedding in the fixing place, such as a method that can achieve the object of the present invention, can be used without limitation. Can be.

【0054】研磨用成形体を研磨用の付帯部品へ固定す
る際の研磨用成形体の個数については、1個または2個
以上用いればよく、さらに2個以上用いることが好まし
い。この理由としては、以下のことなどが考えられる。
しかしながら、これらの考えは本発明を限定するもので
はない。
Regarding the number of the molded bodies for polishing when the molded articles for polishing are fixed to the accessory parts for polishing, one or more than two molded bodies may be used, and more preferably two or more are used. The reasons may be as follows.
However, these ideas do not limit the invention.

【0055】1)研磨加工プロセスにおいて用いられる
研磨液を研磨中に適切に排出することで研磨速度を向上
させるためである。このため、研磨用成形体を2個以上
用いて研磨用定盤を形成させた場合には、研磨用成形体
間の隙間より研磨液の排出ができる。また、1個を用い
た場合には、研磨用成形体の研磨面の側に研磨液を排出
できる適当な溝の構造を持たせることが好ましい。
1) This is because the polishing rate is improved by appropriately discharging the polishing liquid used in the polishing process during polishing. Therefore, when the polishing platen is formed by using two or more polishing compacts, the polishing liquid can be discharged from the gap between the polishing compacts. When one is used, it is preferable to provide an appropriate groove structure capable of discharging the polishing liquid on the side of the polishing surface of the molded article for polishing.

【0056】2)研磨用成形体を2個以上用いて研磨用
定盤を形成させた場合には、研磨用成形体と被研磨材料
の摺擦面への研磨液の供給が改善され、被研磨材料全面
の研磨速度に偏りなく、効率よく研磨できるようにな
る。
2) When the polishing platen is formed by using two or more polishing bodies, the supply of the polishing liquid to the rubbing surface of the polishing body and the material to be polished is improved, Polishing can be performed efficiently without bias in the polishing rate of the entire polishing material.

【0057】また、研磨用成形体を2個以上の複数個用
いて研磨用定盤を構成した場合、複数種類の研磨用成形
体を用いることも可能である。このとき、複数種類の研
磨用成形体は組み込まれる付帯部品に対し、研磨加工に
際しての対称性を考慮して配置されることが好ましい。
このようにすることにより、複数種類の研磨用成形体を
用いた場合にも、研磨加工に際して均一な研磨性能を得
ることが可能となる。
When a polishing platen is formed by using two or more polishing compacts, a plurality of types of polishing compacts can be used. At this time, it is preferable that a plurality of types of abrasive compacts are arranged with respect to the attached components in consideration of symmetry in polishing.
In this manner, even when a plurality of types of molded bodies for polishing are used, uniform polishing performance can be obtained during polishing.

【0058】用いられる研磨用成形体の形状は前記した
ように特に限定されるものではなく、研磨用成形体が研
磨用の付帯部品へ装着できるものであればどのような形
状のものも採用できる。例えば円柱状ペレット、四角柱
状ペレットや三角状ペレットなどの角柱状ペレット、扇
型柱状ペレット、あるいはそれらの中心を繰り抜いたリ
ング状ペレット等を例示でき、さらには被研磨材料との
接触面が直線と曲線を組み合わせてできるあらゆる形状
のものが例示できる。また、その大きさは通常用いられ
る範囲であれば特に限定されるものではなく、研磨用定
盤中の研磨用成形体を組み込むための付帯部品の大きさ
に応じて決められる。
The shape of the abrasive compact to be used is not particularly limited as described above, and any shape can be adopted as long as the abrasive compact can be attached to an accessory part for polishing. . For example, columnar pellets, square columnar pellets such as quadrangular columnar pellets and triangular pellets, fan-shaped columnar pellets, or ring-shaped pellets obtained by punching out the center thereof can be exemplified. And any shape that can be formed by combining the curve with the curve. The size is not particularly limited as long as it is within a range usually used, and is determined according to the size of an accessory part for incorporating a molded body for polishing in a polishing table.

【0059】本発明において用いられる研磨用成形体を
研磨用定盤として配置する際の配置方法の態様として
は、前記記載の研磨用成形体の特性を有するものを組み
合わせるのであれば特に限定されるものではなく、例え
ば研磨用成形体の小片を組み合わせて一体化する方法、
大きな円板に埋め込む方法などが挙げられる。
The mode of the method of arranging the molded article for polishing used in the present invention as a polishing platen is not particularly limited as long as the polishing molded article having the characteristics described above is combined. Rather than, for example, a method of combining and integrating small pieces of the molded body for polishing,
There is a method of embedding in a large disk.

【0060】このような研磨用成形体を2個以上研磨用
定盤へ配列させる場合には配置された研磨用成形体の研
磨面を被研磨材料の形状に合うように整えることが望ま
しい。この場合、付帯部品についてその形状に合ったも
のを選択しても良い。例えば、被研磨材料が平坦な基板
材料の場合にはその研磨用成形体の被研磨材料との接触
面を平坦化することが望ましく、曲面状の場合にはそれ
に合った曲面状とすることが望ましい。これは、得られ
た研磨用定盤を用いて研磨加工する際に、被研磨材料と
研磨用成形体が直接接触できるようになっており、その
接触面を多く取ることができるようにするためである。
特に平坦化する場合は、研磨用定盤からの垂直方向の高
さに対してばらつきがないように配置することが好まし
い。
When two or more such compacts for polishing are arranged on the polishing platen, it is desirable to arrange the polished surface of the disposed compact for polishing so as to match the shape of the material to be polished. In this case, it is possible to select an accessory that matches the shape of the accessory. For example, if the material to be polished is a flat substrate material, it is desirable to flatten the contact surface of the molded body for polishing with the material to be polished, and if it is a curved surface, it is preferable to make it a curved surface suitable for it. desirable. This is because, when polishing using the obtained polishing surface plate, the material to be polished and the molded body for polishing can be directly in contact with each other, so that a large contact surface can be obtained. It is.
In particular, in the case of flattening, it is preferable to arrange them so that there is no variation in the vertical height from the polishing platen.

【0061】<研磨用定盤を用いた研磨方法>このよう
にして研磨用定盤に研磨用成形体を組み込むわけである
が、本発明の研磨用定盤を用いて研磨する方法において
は、定盤として研磨加工プロセスにおいて使用されるも
のであれば、その形状、研磨条件、研磨液等の使用の有
無等については特に限定されるものではない。例えば、
研磨液を使用する場合には、従来より用いられてきた研
磨液を用いることでよく、例えば水、水酸化カリウム水
溶液、水酸化ナトリウム水溶液、アミンや有機酸を含む
水溶液などの中性、アルカリ性、酸性の水溶液、場合に
よっては有機系溶液を用いることができ、その温度もこ
れら研磨液の沸点よりも低い温度の範囲であれば、特に
限定されるものではない。もちろん、遊離砥粒として通
常用いられている、酸化アルミニウム、酸化ケイ素、酸
化セリウム、酸化ジルコニウム、酸化マンガン、酸化チ
タン、酸化マグネシウム、酸化鉄、酸化クロム、酸化イ
ットリウム、酸化錫等の酸化物や、炭化ケイ素、炭化ホ
ウ素、窒化ホウ素等の非酸化物を用いることができ、さ
らに酸化ジルコニウムについては、安定化剤として酸化
イットリウム、酸化スカンジウム、酸化インジウム、酸
化セリウム等の希土類酸化物、酸化マグネシウム、酸化
カルシウム等を固溶させた酸化ジルコニウムなどを用い
てもよい。また、研磨液の流量や、加工圧力、被研磨材
料と定盤の研磨加工中の相対速度(研磨用定盤の回転速
度)などの研磨条件に関しても、特に限定されるもので
はない。
<Polishing Method Using Polishing Surface Plate> In this manner, the molded body for polishing is incorporated into the polishing surface plate. In the method of polishing using the polishing surface plate of the present invention, There is no particular limitation on the shape, polishing conditions, whether or not a polishing liquid or the like is used, as long as the surface plate is used in the polishing process. For example,
When using a polishing liquid, it is possible to use a polishing liquid that has been used conventionally, for example, water, potassium hydroxide aqueous solution, sodium hydroxide aqueous solution, neutral and alkaline, such as an aqueous solution containing an amine or an organic acid, An acidic aqueous solution and, in some cases, an organic solution can be used, and the temperature thereof is not particularly limited as long as it is within a range lower than the boiling point of these polishing liquids. Of course, aluminum oxide, silicon oxide, cerium oxide, zirconium oxide, manganese oxide, titanium oxide, magnesium oxide, iron oxide, chromium oxide, yttrium oxide, oxides such as tin oxide, which are usually used as free abrasive grains, Non-oxides such as silicon carbide, boron carbide and boron nitride can be used. Further, for zirconium oxide, rare earth oxides such as yttrium oxide, scandium oxide, indium oxide and cerium oxide, magnesium oxide, oxide Zirconium oxide or the like in which calcium or the like is dissolved may be used. The polishing conditions such as the flow rate of the polishing liquid, the processing pressure, and the relative speed during the polishing of the material to be polished and the surface plate (the rotation speed of the polishing surface plate) are not particularly limited.

【0062】ここで、研磨用定盤とは組み込まれた研磨
用成形体が被研磨材料に対して直接接触して研磨するた
めに用いられ、研磨加工プロセスにおいて十分な強度を
有し、かつ被研磨材料と同じ形状を有するだけでなく、
必要に応じて非平面の形状を有していてもよい。例え
ば、平板状、円盤状、リング状、円筒状等を挙げること
ができる。
Here, the polishing platen is used to polish a molded body for polishing directly in contact with a material to be polished, has sufficient strength in the polishing process, and is used for polishing. Not only has the same shape as the abrasive material,
It may have a non-planar shape if necessary. For example, a flat plate shape, a disk shape, a ring shape, a cylindrical shape, and the like can be given.

【0063】また、本発明の研磨方法においては研磨布
を用いないため、研磨中に従来の方法において見られた
研磨布の性能劣化によるその取り換え等による研磨作業
の中断については、本発明の研磨用成形体を用いること
で耐久性が向上し、取り換え頻度を減少できるため研磨
作業の効率化が達成できるという利点を有している。
Since the polishing method of the present invention does not use a polishing cloth, the polishing operation is not interrupted due to the replacement of the polishing cloth due to the performance deterioration of the polishing cloth observed in the conventional method. The use of a molded body for use has an advantage that durability can be improved and the frequency of replacement can be reduced, so that the efficiency of the polishing operation can be improved.

【0064】さらに、従来の研磨布を用いた方法におい
て生じる遊離砥粒を含んだ研磨廃液については、本発明
の研磨用成形体を用いることで遊離砥粒を用いなくなる
か少量用いるだけであるため、研磨廃液中の遊離砥粒や
研磨により生じた粒の量が少なくなり、廃液処理の問題
が軽減される。なお、ここで用いられる遊離砥粒は特に
限定されるものではなく、その材質や粒径などは目的に
応じて適宜選択される。
Further, with respect to the polishing waste liquid containing free abrasive grains generated in the conventional method using a polishing cloth, free abrasive grains are not used or only a small amount is used by using the molded article for polishing according to the present invention. In addition, the amount of free abrasive grains in polishing waste liquid and the amount of particles generated by polishing is reduced, and the problem of waste liquid treatment is reduced. The loose abrasive used here is not particularly limited, and its material, particle size and the like are appropriately selected according to the purpose.

【0065】本発明の研磨用成形体、それを用いた研磨
用定盤は、半導体基板、酸化物基板、各種ガラス基板、
石英ガラス基板等の基板材料、磁気ヘッド材料、各種ガ
ラス、金属材料、レンズ等の光学材料、建築分野等に使
用される石材等の研磨、またCMP工程にも有用であ
る。この中、従来の研磨布を用いた方法に比べ面だれが
ないために研磨された材料を有効に使用できることもあ
り、基板材料やCMP工程に好ましく用いられ、半導体
構造等を平坦化するのに特に有用である。
The molded article for polishing of the present invention and the platen for polishing using the same include semiconductor substrates, oxide substrates, various glass substrates,
It is also useful for polishing substrate materials such as quartz glass substrates, magnetic head materials, various types of glass, metal materials, optical materials such as lenses, stone materials used in the field of construction, and the CMP process. Of these, the polished material can be used effectively because there is no surface sagging compared to the conventional method using a polishing cloth, and it is preferably used for a substrate material or a CMP process, and is used for flattening a semiconductor structure or the like. Particularly useful.

【0066】[0066]

【実施例】以下、本発明を実施例を用いてさらに詳細に
説明するが、本発明はこれらに限定されるものではな
い。なお、各評価は以下に示した方法によって実施し
た。
EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. In addition, each evaluation was implemented by the method shown below.

【0067】〜研磨用成形体の相対密度〜 100mm×100mm×15mm(厚さ)の平板状試
料を作製し、試料とした。この試料を電子天秤で測定し
た重量と、マイクロメータで測定した形状寸法から研磨
用成形体のかさ密度W2を算出した。次に、JIS−R
−2205に準じて、研磨用成形体の一部を粉砕し、真
密度W1を求め、先に算出した研磨用成形体のかさ密度
W2から下式により相対密度を算出した。
-Relative Density of Polished Molded Article-A flat sample of 100 mm x 100 mm x 15 mm (thickness) was prepared and used as a sample. The bulk density W2 of the compact for polishing was calculated from the weight of this sample measured with an electronic balance and the shape and dimensions measured with a micrometer. Next, JIS-R
According to -2205, a part of the abrasive compact was pulverized to obtain a true density W1, and a relative density was calculated from the bulk density W2 of the abrasive compact previously calculated by the following equation.

【0068】相対密度(%)=(W2/W1)×100 〜研磨用成形体の研磨面の微構造〜 研磨用成形体をアクリル樹脂で包埋後、ミクロトームで
切断して観察用サンプルを作製した。この観察用サンプ
ルを走査型電子顕微鏡ISI DS−130(明石製作
所製)で観察した。各種倍率で撮影した電子顕微鏡写真
を無機粒子、細孔それぞれを考慮してインターセプト法
により平均径を求めた。また、このときの無機粒子、細
孔それぞれを横切る線長をその径とし、その径の和を基
に面積の割合を算出した。そして各々の合計から、研磨
面の面積に対する非摺擦部分の面積の割合をA、研磨面
の面積に対する摺擦部分の面積の割合をBとし、比率A
/(A+B)(=r)を算出した。
Relative density (%) = (W2 / W1) × 100—Microstructure of polished surface of molded body for polishing—Embedded abrasive body with acrylic resin and cut with microtome to prepare sample for observation did. This observation sample was observed with a scanning electron microscope ISI DS-130 (manufactured by Akashi Seisakusho). The average diameter of electron micrographs taken at various magnifications was determined by an intercept method in consideration of each of the inorganic particles and pores. At this time, the line length crossing each of the inorganic particles and the pores was defined as the diameter, and the area ratio was calculated based on the sum of the diameters. From the sum of each, the ratio of the area of the non-sliding portion to the area of the polished surface is A, and the ratio of the area of the rubbing portion to the area of the polished surface is B, and the ratio A
/ (A + B) (= r) was calculated.

【0069】この操作を当該研磨用成形体の研磨に携わ
る面に対する法線方向に定間隔で10面を測定し、それ
を平均してrの平均値(=r')とした。また、10面
測定した際のrの最大値、最小値と平均値r'から平均
値に対する変動の最大、最小を下式により算出した。
In this operation, ten surfaces were measured at regular intervals in the normal direction to the surface involved in polishing of the molded body for polishing, and the measured values were averaged to obtain an average value of r (= r '). In addition, the maximum and minimum of the variation with respect to the average value were calculated from the maximum value, the minimum value of r and the average value r ′ when measuring 10 surfaces by the following formula.

【0070】変動の最大(%):{(最大値−平均値)
/平均値}×100 変動の最小(%):{(最小値−平均値)/平均値}×
100 〜研磨用成形体を構成する無機粒子の平均粒子径〜 前記研磨用成形体の研磨面の微構造の観察に準じ、無機
粒子部分のみを考慮してインタセプト法により求めた。
Maximum variation (%): {(maximum value−average value)
/ Average} × 100 Minimum (%) of fluctuation: {(minimum-average) / average} ×
100—average particle diameter of inorganic particles constituting the molded article for polishing— It was determined by an intercept method in consideration of only the inorganic particle portion, based on observation of the microstructure of the polished surface of the molded article for polishing.

【0071】〜研磨用成形体の摺擦部分の構成〜 前記研磨用成形体の研磨面の微構造の観察に準じて走査
型電子顕微鏡観察を行い、1μm以下の細孔部分と無機
粒子部分を考慮してインターセプト法により、無機粒
子、1μm以下の細孔部分それぞれを横切る線長の割合
から、摺擦部分の面積に対する摺擦部分中の細孔の面積
の割合を算出した。
Configuration of the rubbing portion of the molded article for polishing A scanning electron microscope observation was performed in accordance with the observation of the fine structure of the polished surface of the molded article for polishing, and pores and inorganic particles of 1 μm or less were observed. The ratio of the area of the pores in the rubbing portion to the area of the rubbing portion was calculated from the ratio of the line length crossing each of the inorganic particles and the pore portions of 1 μm or less by taking the intercept method into consideration.

【0072】〜研磨用成形体の非摺擦部分の構成〜 前記研磨用成形体の研磨面の微構造の観察に準じて走査
型電子顕微鏡観察を行い、1μmより大きい細孔部分を
考慮してインターセプト法により、1μmより大きい細
孔部分を横切る線長をその細孔径とし、個数換算で、非
摺擦部分の面積に対する非摺擦部分中の10μm以上の
細孔の割合を算出した。
Configuration of Non-Sliding Part of Polishing Molded Body Scanning electron microscope observation is performed according to the observation of the microstructure of the polished surface of the polishing molded body, and a pore portion larger than 1 μm is taken into consideration. The line length crossing the pore portion larger than 1 μm was defined as the pore diameter by the intercept method, and the ratio of the pores of 10 μm or more in the non-rubbing portion to the area of the non-rubbing portion was calculated in terms of the number.

【0073】〜圧縮強度〜 JIS−R−1608に準拠し、10mm×10mm×
7mm(厚さ)の試料を作製し、島津オートグラフIS
−10T(島津製作所製)を用い、クロスヘッド速度
0.5mm/分で負荷を加えて測定した。
-Compression strength- According to JIS-R-1608, 10 mm x 10 mm x
7mm (thickness) sample was prepared and Shimadzu Autograph IS
Using -10T (manufactured by Shimadzu Corporation), a load was applied at a crosshead speed of 0.5 mm / min, and the measurement was performed.

【0074】〜研磨試験〜 実施例については、表1〜4に示した特性の研磨用成形
体(直径25mm、厚さ10mmの円柱状)を、研磨装
置PLANOPOL/PEDEMAX2(Struer
s製)の下定盤(直径300mm)に100個装着し、
研磨用成形体の表面を平坦に整えた。これを下定盤回転
数300rpm、所定加工圧力のもとで、表5〜9に示
した被研磨材料(45mm×45mm角)を用い、表5
〜9に示した研磨液を用いて、流量200ml/分で流
通させながら研磨した。研磨後の被研磨材料表面を光学
顕微鏡で観察し、極めて平滑でスクラッチ、ピット等の
欠陥のない良好な面である場合を○、平滑にもならずに
研磨加工できない場合を×とした。また、同時に研磨用
成形体の消耗状況を単位時間の厚さ変化量として測定し
た。この消耗が著しい場合を×、許容範囲内である場合
を○とした。
[Polishing Test] In the examples, a molded product for polishing (a cylindrical shape having a diameter of 25 mm and a thickness of 10 mm) having the characteristics shown in Tables 1 to 4 was prepared using a polishing apparatus PLANOPOL / PEDEMAX2 (Struer).
s product) on the lower platen (diameter 300mm) 100 pieces,
The surface of the molded article for polishing was flattened. Using a material to be polished (45 mm × 45 mm square) shown in Tables 5 to 9 under a lower platen rotation speed of 300 rpm and a predetermined processing pressure, the table 5 was used.
Polishing was performed while flowing at a flow rate of 200 ml / min using the polishing liquids shown in Nos. 9 to 9. The surface of the material to be polished after the polishing was observed with an optical microscope, and the case where the surface was extremely smooth and free of defects such as scratches and pits was evaluated as ○, and the case where the surface could not be polished without being smooth was evaluated as ×. At the same time, the state of consumption of the abrasive compact was measured as the amount of change in thickness per unit time. The case where the consumption was remarkable was evaluated as x, and the case where the consumption was within the allowable range was evaluated as ○.

【0075】なお、表5〜9に記載の研磨液は、以下の
通りである。
The polishing liquids shown in Tables 5 to 9 are as follows.

【0076】研磨液a:KOH水溶液(pH=10.
8、液温:60℃) 研磨液b:平均粒径0.3μmのアルミナ砥粒を5重量
%含有する水溶液(室温) 研磨液c:平均粒径0.4μmのセリア砥粒を5重量%
含有する水溶液(室温) 〜研磨速度〜 研磨試験前後の被研磨材料の重量減少量から研磨速度を
算出した。この操作を研磨用成形体の研磨に携わる面に
対する法線方向に約0.2mmの深さまで面出しを行
い、10回繰り返した。この平均値を研磨速度とし、さ
らに、実施例6及び実施例8では10の研磨速度の測定
値の標準偏差も求めた。
Polishing liquid a: KOH aqueous solution (pH = 10.
8, liquid temperature: 60 ° C.) Polishing liquid b: aqueous solution containing 5% by weight of alumina abrasive grains having an average particle diameter of 0.3 μm (room temperature) Polishing liquid c: 5% by weight of ceria abrasive particles having an average particle diameter of 0.4 μm
Aqueous solution (room temperature)-polishing rate-The polishing rate was calculated from the weight loss of the material to be polished before and after the polishing test. This operation was surfaced to a depth of about 0.2 mm in the direction normal to the surface involved in polishing of the molded body for polishing, and was repeated 10 times. The average value was used as the polishing rate, and in Examples 6 and 8, the standard deviation of the measured values of the polishing rates of 10 was also determined.

【0077】〜表面精度〜 研磨処理後の被研磨材料の表面粗さを原子間力顕微鏡
(AFM)SPI3600(SII社製)を用い、コン
タクトモードによる斥力測定法により測定した。測定は
被研磨材料の5μm×5μmの範囲を3領域ずつ任意に
中心線平均粗さ(Ra)を測定して平均値を求めた。
-Surface Accuracy- The surface roughness of the material to be polished after the polishing treatment was measured by a repulsive force measuring method in a contact mode using an atomic force microscope (AFM) SPI3600 (manufactured by SII). In the measurement, the center line average roughness (Ra) was arbitrarily measured in three regions in a range of 5 μm × 5 μm of the material to be polished to obtain an average value.

【0078】〜研磨廃液の透過率〜 研磨試験により生じる研磨廃液の濁度を分光光度計(日
本分光製、型式:Ubest−55)を用い、精製水を
基準として波長600nmにおける透過率を測定して評
価した。測定結果では、透過率が高い場合は研磨廃液中
の遊離砥粒量が少ないことを示し、低い場合は逆に多い
ことを示す。
-Transmittance of polishing waste liquid-The turbidity of the polishing waste liquid generated by the polishing test was measured using a spectrophotometer (model: Ubest-55, manufactured by JASCO Corporation) at a wavelength of 600 nm with reference to purified water. Was evaluated. In the measurement results, when the transmittance is high, it indicates that the amount of free abrasive grains in the polishing waste liquid is small, and when it is low, it indicates that the amount is large.

【0079】<研磨用成形体の製造>表1〜4に示す特
性の粉末を原料とし、場合によっては有機物粉末(例え
ば、ポリビニルアルコール粉末、馬鈴薯でんぷん、メタ
クリル酸ブチル粉末、パラフィンワックス粉末などの1
種類以上)を混合し、その粉末を50〜3000kg/
cm2の圧力で成形した後、最終的に700〜1700
℃で焼成して研磨用成形体1〜25を得た。これらの研
磨用成形体を前記記載の方法により評価し、その結果
を、表1にはシリカを主成分とした研磨用成形体の、表
2にはジルコニアを主成分とした研磨用成形体の、表3
にはセリアを主成分とした研磨用成形体の、表4にはジ
ルコニアとアルミナの混合物を主成分とした研磨用成形
体の研磨面の微構造の特性を原料の成分と共に示す。
<Production of molded body for polishing> Powders having the characteristics shown in Tables 1 to 4 were used as raw materials, and in some cases, organic powders (for example, polyvinyl alcohol powder, potato starch, butyl methacrylate powder, paraffin wax powder, etc.)
Or more) and mix the powder with 50-3000 kg /
After molding at a pressure of cm 2 , finally 700 to 1700
It baked at ℃, and obtained the abrasive compacts 1-25. These abrasive compacts were evaluated by the method described above, and the results are shown in Table 1 of the abrasive compact mainly containing silica and Table 2 of the abrasive compact mainly containing zirconia in Table 2. , Table 3
Table 4 shows the characteristics of the microstructure of the polished surface of the polishing compact mainly containing ceria, and Table 4 shows the characteristics of the polished surface of the polishing compact mainly containing a mixture of zirconia and alumina.

【0080】[0080]

【表1】 [Table 1]

【0081】[0081]

【表2】 [Table 2]

【0082】[0082]

【表3】 [Table 3]

【0083】[0083]

【表4】 [Table 4]

【0084】さらに研磨用成形体1について、前記した
方法により走査型電子顕微鏡で撮影し、図3及び図4の
撮影像を得た。図3から研磨用成形体1にはその表面に
摺擦部分5と非摺擦部分6が存在しており、さらに、摺
擦部分の一部を拡大した図4によれば、摺擦部分には小
さな細孔が多数あることが分かる。
Further, the molded article for polishing 1 was photographed with a scanning electron microscope according to the method described above, and the photographed images shown in FIGS. 3 and 4 were obtained. As shown in FIG. 3, the rubbing portion 5 and the non-rubbing portion 6 are present on the surface of the molded article 1 for polishing, and according to FIG. Indicates that there are many small pores.

【0085】<研磨用成形体による研磨とその評価> 実施例1〜3、比較例1〜3 表5に示されるようにシリコン(形状:45mm×45
mm角)を被研磨材料とし、研磨用成形体及び研磨液を
用い、前記記載の研磨試験に準拠し、加工圧力として6
00g/cm2にて研磨した。表5には研磨試験により
得られた被研磨材料の平滑性、研磨速度、中心線平均粗
さ(Ra)を示すとともに、研磨試験後の研磨廃液の透
過率も合わせて示す。
<Polishing by Polishing Molded Body and Its Evaluation> Examples 1 to 3 and Comparative Examples 1 to 3 As shown in Table 5, silicon (shape: 45 mm × 45)
mm square) as a material to be polished, using a molded body for polishing and a polishing liquid, in accordance with the polishing test described above, and a processing pressure of 6 mm.
Polishing was performed at 00 g / cm 2 . Table 5 shows the smoothness, polishing rate, and center line average roughness (Ra) of the material to be polished obtained by the polishing test, and also shows the transmittance of the polishing waste liquid after the polishing test.

【0086】[0086]

【表5】 [Table 5]

【0087】表5に示した通り、実施例1〜3では高速
で成形体の消耗も少なくかつ平滑に研磨が行われる。こ
れに対し、比較例1では平滑性はあるものの成形体の消
耗が著しくなる。比較例2では平滑な面を得ることがで
きない。比較例3では研磨速度は高いものの、加工欠陥
が一部生じて平滑性が悪くなることが分かる。
As shown in Table 5, in Examples 1 to 3, polishing is performed smoothly at high speed with little consumption of the compact. On the other hand, in Comparative Example 1, although the smoothness was obtained, the molded article was significantly consumed. In Comparative Example 2, a smooth surface cannot be obtained. In Comparative Example 3, although the polishing rate was high, it was found that some processing defects occurred and the smoothness deteriorated.

【0088】実施例4〜5、比較例4〜6 表6に示されるように硼酸塩ガラス(形状:45mm×
45mm角)を被研磨材料とし、研磨用成形体及び研磨
液を用い、前記記載の研磨試験に準拠し、加工圧力とし
て100g/cm2にて研磨した。表6には研磨試験に
より得られた被研磨材料の平滑性、研磨速度、中心線平
均粗さ(Ra)を示すとともに、研磨試験後の研磨廃液
の透過率も合わせて示す。
Examples 4-5, Comparative Examples 4-6 As shown in Table 6, borate glass (shape: 45 mm ×
(45 mm square) was used as a material to be polished, and polished at a processing pressure of 100 g / cm 2 using a molded article for polishing and a polishing liquid in accordance with the polishing test described above. Table 6 shows the smoothness, polishing rate, and center line average roughness (Ra) of the material to be polished obtained by the polishing test, and also shows the transmittance of the polishing waste liquid after the polishing test.

【0089】[0089]

【表6】 [Table 6]

【0090】表6に示した通り、実施例4及び5では高
速で成形体の消耗も少なくかつ平滑に研磨が行われる。
これに対し、比較例4では研磨速度が小さくなる。比較
例5では平滑性はあるものの成形体の消耗が著しくな
る。比較例6では平滑な面を得ることができない。
As shown in Table 6, in Examples 4 and 5, polishing is performed smoothly at high speed with little consumption of the molded body.
On the other hand, in Comparative Example 4, the polishing rate is reduced. In Comparative Example 5, although the smoothness was obtained, the molded article was significantly consumed. In Comparative Example 6, a smooth surface cannot be obtained.

【0091】実施例6〜8 表7に示されるように硼酸塩ガラス(形状:45mm×
45mm角)を被研磨材料とし、研磨用成形体及び研磨
液を用い、前記記載の研磨試験に準拠し、加工圧力とし
て100g/cm2にて研磨した。表7には研磨試験に
より得られた被研磨材料の平滑性、研磨速度及びその標
準偏差、中心線平均粗さ(Ra)を示すとともに、研磨
試験後の研磨廃液の透過率も合わせて示す。
Examples 6 to 8 As shown in Table 7, borate glass (shape: 45 mm ×
(45 mm square) was used as a material to be polished, and polished at a processing pressure of 100 g / cm 2 using a molded article for polishing and a polishing liquid in accordance with the polishing test described above. Table 7 shows the smoothness, polishing rate and its standard deviation, center line average roughness (Ra) of the material to be polished obtained by the polishing test, and also shows the transmittance of the polishing waste liquid after the polishing test.

【0092】[0092]

【表7】 [Table 7]

【0093】表7に示した通り、実施例6及び実施例7
の結果から、A/(A+B)値が同等の場合、非摺擦部
分にある10μm以上の細孔の割合が大きいと研磨速度
が一層速くなることが分かる。また、実施例6及び実施
例8の結果からA/(A+B)値の平均値Ravに対す
る変動を小さくすることにより、研磨速度がより一層安
定することが分かる。
As shown in Table 7, Examples 6 and 7
It can be seen from the results that when the A / (A + B) values are equal, the polishing rate is further increased when the ratio of the pores having a size of 10 μm or more in the non-rubbing portion is large. Also, from the results of Example 6 and Example 8, it can be seen that the polishing rate is further stabilized by reducing the variation of the A / (A + B) value with respect to the average value Rav.

【0094】実施例9〜12、比較例7〜8 表8に示されるように石英(形状:45mm×45mm
角)を被研磨材料とし、研磨用成形体及び研磨液を用
い、前記記載の研磨試験に準拠し、加工圧力として10
0g/cm2にて研磨した。表8には研磨試験により得
られた被研磨材料の平滑性、研磨速度、中心線平均粗さ
(Ra)を示すとともに、研磨試験後の研磨廃液の透過
率も合わせて示す。
Examples 9 to 12, Comparative Examples 7 to 8 As shown in Table 8, quartz (shape: 45 mm × 45 mm
Corner) as a material to be polished, using a molded body for polishing and a polishing liquid, in accordance with the polishing test described above, and a processing pressure of
Polishing was performed at 0 g / cm 2 . Table 8 shows the smoothness, polishing rate, and center line average roughness (Ra) of the material to be polished obtained by the polishing test, and also shows the transmittance of the polishing waste liquid after the polishing test.

【0095】[0095]

【表8】 [Table 8]

【0096】表8に示した通り、実施例9〜12では高
速で成形体の消耗も少なくかつ平滑に研磨が行われる。
これに対し、比較例7では平滑性はあるものの成形体の
消耗が著しくなる。比較例8では平滑な面を得ることが
できない。
As shown in Table 8, in Examples 9 to 12, polishing is performed smoothly at high speed with little consumption of the molded body.
On the other hand, in Comparative Example 7, although the smoothness was obtained, the molded article was significantly consumed. In Comparative Example 8, a smooth surface cannot be obtained.

【0097】実施例13〜15、比較例9〜10 表9に示されるように硼酸塩ガラス(形状:45mm×
45mm角)を被研磨材料とし、研磨用成形体及び研磨
液を用い、前記記載の研磨試験に準拠し、加工圧力とし
て100g/cm2にて研磨した。表9には研磨試験に
より得られた被研磨材料の平滑性、研磨速度、中心線平
均粗さ(Ra)を示すとともに、研磨試験後の研磨廃液
の透過率も合わせて示す。
Examples 13 to 15 and Comparative Examples 9 to 10 As shown in Table 9, borate glass (shape: 45 mm ×
(45 mm square) was used as a material to be polished, and polished at a processing pressure of 100 g / cm 2 using a molded article for polishing and a polishing liquid in accordance with the polishing test described above. Table 9 shows the smoothness, polishing rate, and center line average roughness (Ra) of the material to be polished obtained by the polishing test, and also shows the transmittance of the polishing waste liquid after the polishing test.

【0098】[0098]

【表9】 [Table 9]

【0099】表9に示した通り、実施例13〜15では
高速で成形体の消耗も少なくかつ平滑に研磨が行われ
る。これに対し、比較例9では平滑性はあるものの成形
体の消耗が著しくなる。比較例10では平滑な面を得る
ことができない。
As shown in Table 9, in Examples 13 to 15, polishing is performed smoothly at high speed with little consumption of the molded body. On the other hand, in Comparative Example 9, although the smoothness was obtained, the molded article was significantly consumed. In Comparative Example 10, a smooth surface cannot be obtained.

【0100】[0100]

【発明の効果】本発明によれば、研磨加工プロセス中に
遊離砥粒を大量に含有する研磨廃液をほとんど生じるこ
とがなく、半導体基板、酸化物単結晶基板、各種ガラス
基板、石英ガラス基板、セラミックス基板等の基板材料
や精密加工を要する光学材料などの被研磨材料表面を従
来法と同程度以上の高精度に一層高速で得ることので
き、このような優れた効果を安定して行わしめることが
できる。また、研磨処理における耐久性もあるため、研
磨加工プロセスに有用である。
According to the present invention, a polishing waste liquid containing a large amount of free abrasive grains is hardly generated during the polishing process, and a semiconductor substrate, an oxide single crystal substrate, various glass substrates, a quartz glass substrate, The surface of a material to be polished, such as a substrate material such as a ceramic substrate or an optical material requiring precision processing, can be obtained at a higher speed with a high precision equal to or higher than that of the conventional method, and such excellent effects can be stably performed. be able to. In addition, since it has durability in the polishing process, it is useful for the polishing process.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の研磨用成形体の研磨面の一部を模式的
に示す概念図である。
FIG. 1 is a conceptual diagram schematically showing a part of a polishing surface of a molded article for polishing of the present invention.

【図2】図1中のXからX’の方向での断面の上部を示
す図である。
FIG. 2 is a diagram illustrating an upper part of a cross section in a direction from X to X ′ in FIG. 1;

【図3】本発明の研磨用成形体1を走査型電子顕微鏡に
より撮影して得られた像である。撮影倍率は図3に記載
のように棒線の長さが100μmとなる倍率である。
FIG. 3 is an image obtained by photographing the molded article for polishing 1 of the present invention with a scanning electron microscope. The photographing magnification is a magnification at which the length of the bar is 100 μm as shown in FIG.

【図4】図3の内、四角で囲った部分を拡大して得られ
た像の一部である。撮影倍率は図4に記載のように棒線
の長さが1μmとなる倍率である。
FIG. 4 is a part of an image obtained by enlarging a portion surrounded by a square in FIG. The photographing magnification is a magnification at which the length of the bar is 1 μm as shown in FIG.

【符号の説明】[Explanation of symbols]

図1及び図2では、図中の符号は共通に用いられてい
る。 1:研磨用成形体 2:摺擦部分 3:非摺擦部分 4: 研磨用成形体 5:摺擦部分 6:非摺擦部分 7:図4に示される拡大部分
1 and 2, the reference numerals in the drawings are commonly used. 1: Polishing molded body 2: rubbing part 3: non-rubbing part 4: polishing molding 5: rubbing part 6: non-rubbing part 7: enlarged part shown in FIG.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3C058 AA09 CB03 CB10 DA12 DA17 3C063 AA02 AB05 BA22 BB01 BB07 BD01 BH07 CC02 CC19 EE10 FF09 FF20  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C058 AA09 CB03 CB10 DA12 DA17 3C063 AA02 AB05 BA22 BB01 BB07 BD01 BH07 CC02 CC19 EE10 FF09 FF20

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】無機粒子からなる研磨用成形体であって、
前記研磨用成形体の研磨に携わる面に摺擦部分と非摺擦
部分とを有し、前記摺擦部分に存在する細孔が1μm以
下の径からなると共にその面積が摺擦部分の全面積の1
5〜75%であり、さらに非摺擦部分の面積が研磨に携
わる面の全面積に対して20〜80%である研磨用成形
体。
1. A molded article for polishing comprising inorganic particles, comprising:
The surface of the molded article for polishing has a rubbing portion and a non-rubbing portion on a surface involved in polishing, and the pores present in the rubbing portion have a diameter of 1 μm or less and the area thereof is the total area of the rubbing portion. Of 1
5 to 75%, and the molded body for polishing, wherein the area of the non-sliding portion is 20 to 80% with respect to the total area of the surface engaged in polishing.
【請求項2】摺擦部分が平均粒子径が0.01〜0.5
μmの無機粒子からなることを特徴とする請求項1に記
載の研磨用成形体。
2. The rubbed part has an average particle diameter of 0.01 to 0.5.
The molded article for polishing according to claim 1, comprising inorganic particles having a particle diameter of μm.
【請求項3】非摺擦部分に存在する細孔の50%以上が
10μm以上の径を有する細孔からなることを特徴とす
る請求項1又は請求項2に記載の研磨用成形体。
3. The molded article for polishing according to claim 1, wherein 50% or more of the fine pores present in the non-rubbing portion are fine pores having a diameter of 10 μm or more.
【請求項4】非摺擦部分が、研磨に携わる面に一様に分
布していることを特徴とする請求項1〜3のいずれかに
記載の研磨用成形体。
4. A molded article for polishing according to claim 1, wherein the non-rubbing portions are uniformly distributed on a surface involved in polishing.
【請求項5】請求項1〜4のいずれかに記載の研磨用成
形体と付帯部品からなる研磨用定盤。
5. A polishing platen comprising the molded article for polishing according to claim 1 and ancillary components.
JP2000205580A 2000-07-03 2000-07-03 Polishing molding and polishing surface table using the same Pending JP2002018702A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000205580A JP2002018702A (en) 2000-07-03 2000-07-03 Polishing molding and polishing surface table using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000205580A JP2002018702A (en) 2000-07-03 2000-07-03 Polishing molding and polishing surface table using the same

Publications (1)

Publication Number Publication Date
JP2002018702A true JP2002018702A (en) 2002-01-22

Family

ID=18702641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000205580A Pending JP2002018702A (en) 2000-07-03 2000-07-03 Polishing molding and polishing surface table using the same

Country Status (1)

Country Link
JP (1) JP2002018702A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017042890A (en) * 2015-08-28 2017-03-02 国立大学法人京都工芸繊維大学 Polishing tool and method for producing the same, and polishing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11198030A (en) * 1998-01-14 1999-07-27 Tosoh Corp Molded body for polishing, surface plate for polishing using it and method of polishing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11198030A (en) * 1998-01-14 1999-07-27 Tosoh Corp Molded body for polishing, surface plate for polishing using it and method of polishing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017042890A (en) * 2015-08-28 2017-03-02 国立大学法人京都工芸繊維大学 Polishing tool and method for producing the same, and polishing device

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