JP2003160379A - Microwave dielectric composition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a micro wave dielectric composition capable of sintering at a low temperature of ≤900°C, having a high dielectric constant or low dielectric constant with a high Q value. <P>SOLUTION: The micro wave dielectric composition is composed of an oxide ceramic grain containing at least one selected from among the group consisting of BaTi<SB>4</SB>O<SB>9</SB>, Ba<SB>2</SB>Ti<SB>9</SB>O<SB>20</SB>, Ba(Zn<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>, Ba(Zn<SB>1/3</SB>Nb<SB>2/3</SB>)O<SB>3</SB>, Ba(Mg<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>, Ba(Co<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>, Ba(Co<SB>1/3</SB>Nb<SB>2/3</SB>)O<SB>3</SB>, Ba(Ni<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>, and TiO<SB>2</SB>, and amorphous glass dispersed with the oxide ceramic grains or oxide based crystallized glass. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates generally to electronic materials, and more particularly to microwave dielectric compositions.

In mobile communication technology such as a mobile phone or wireless information communication technology such as a wireless LAN, there is a demand for transmitting a large amount of large-capacity information, and at the same time, a strict demand for reducing the size and weight of a terminal device. .

In order to reduce the size and weight of such terminal equipment, research has been conducted on a module in which a high-density mounting technique and a high-frequency circuit are integrated.

[0004]

2. Description of the Related Art Miniaturization and improvement in performance of passive components such as antennas and filters are greatly influenced by the materials of which the components are made. The wavelength of a radio wave is shortened to 1 / √ε of the wavelength in free space inside a dielectric material having a permittivity of ε. Therefore, the larger the dielectric constant of the dielectric material used, the shorter the line length in the circuit and the smaller the component. Therefore, increasing the dielectric constant of the material forming the passive component is an important requirement for miniaturization of the component.

On the other hand, the generation of insertion loss is unavoidable in some passive components, particularly filters and resonators, but the dielectric material is required to have a high Q value in order to minimize the insertion loss. .

Further, in a passive component such as a filter circuit composed of an inductance and a capacitance, a material such as Ag, Cu or Au having a low electric resistance is used for the wiring in order to reduce the loss due to the conductor line in the passive component. Is desirable. However, all of these low resistance metals have a relatively low melting point of around 1000 ° C. (for example, Ag has a melting point of 960 ° C. and Cu has a melting point of 1083).
℃, the melting point of Au is 1063 ℃), in order to introduce these low resistance metal materials into the passive component, the firing temperature of the ceramics constituting the dielectric material in the passive component is below the melting point of the metal material. It needs to be suppressed.

Therefore, in order to realize a small-sized, lightweight and high-performance passive component, a microwave dielectric composition having a high dielectric constant and a high Q value and capable of firing at a low temperature is required.

On the other hand, in a transmission line used in an electronic circuit or the like, for example, a microwave strip line, a microwave dielectric composition having a dielectric constant as low as possible is required to realize a high signal transmission speed. In this case as well, the microwave dielectric composition is required to have a high Q value in order to minimize the transmission loss, and it is also necessary to form a laminated structure together with the metal wiring layer, so that it is required to be formed at a low firing temperature. To be done.

[0009]

However, since the conventional microwave dielectric composition needs to be fired at a high temperature exceeding 1500 ° C., such a microwave dielectric composition has a high dielectric constant or a desired dielectric constant. Although it has a low dielectric constant and a high Q value, it was impossible to construct a passive component or a transmission line having a structure laminated with a metal wiring layer.

Therefore, in the conventional passive component or transmission line, the microwave dielectric composition is formed of a ceramic material that can be fired at a low temperature. However, the Q value that can be realized with such a ceramic material that can be fired at a low temperature is about 200 at most, and it has been difficult to realize the Q value exceeding 1000.

Therefore, the present invention has a general object to provide a novel and useful microwave dielectric composition which solves the above problems.

A more specific object of the present invention is to have a high Q value and a high dielectric constant or a high Q value and a low dielectric constant.
An object of the present invention is to provide a microwave dielectric composition that can be fired at a low temperature of 00 ° C or lower.

[0013]

The present invention solves the above-mentioned problems.
Oxide ceramic particles and the oxide ceramic particles
Oxide-based amorphous glass with dispersed particles or oxide-based crystals
High dielectric constant microwave dielectric composition composed of crystallized glass
And the oxide ceramic particles are made of BaTi._Four
O₉, Ba₂Ti₉O₂₀, Ba (Zn_1/3Ta_2/3) O₃, B
a (Zn_1/3Nb _2/3) O_Three, Ba (Mg_1/3Ta_2/3) O
₃, Ba (Co_1/3Ta_2/3) O₃, Ba (Co_1/3N
b_2/3) O₃, Ba (Ni_1/3Ta_2/3) O₃And TiO₂
Containing at least one ingredient selected from the group consisting of
A high dielectric constant microwave dielectric composition characterized by
More to solve.

Further, the present invention has the above-mentioned problems and is characterized by comprising alumina particles having a purity of 99% or more and oxide type amorphous glass or oxide type crystallized glass in which the alumina particles are dispersed. A dielectric constant microwave dielectric composition solves the problem.

According to the invention, BaTi_FourO₉, Ba₂T
i₉O₂₀, Ba (Zn_1/3Ta_2/3) O ₃, Ba (Zn_1/3
Nb_2/3) O_Three, Ba (Mg_1/3Ta_2/3) O₃, Ba (C
o_1/3Ta_2/3) O₃, Ba (Co_1/3Nb_2/3) O₃, Ba
(Ni_1/3Ta_2/3) O₃And TiO₂Selected from the group consisting of
Selected ceramic particles with high Q value and oxide-based
Combined with crystalline glass or oxide-based crystallized glass
By using it, it can be fired at a low temperature of about 900 ° C or less.
High permittivity with a very high Q value or
A low dielectric constant microwave dielectric composition is obtained.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION [First Embodiment] A microwave dielectric composition produced by the inventor of the present invention will be described below as a first embodiment of the present invention.

[0017]

Example 1 TiO ₂ ceramic powder having an average particle size of 5 μm and glass powder (GA55 manufactured by Nippon Electric Glass Co., Ltd.) having an average particle size of 3 μm and mainly precipitating Nd ₂ TiO ₇ crystals were used, and 20% by volume and It mix | blends in the ratio of 80 volume%, and prepares a mixed powder. However, the TiO ₂ ceramic powder is prepared by pulverizing a TiO ₂ block that has been temporarily calcined at a temperature of 1500 ° C. or higher into a predetermined particle size. Further, PVB resin was added to the obtained mixture powder in a ratio of 2% by volume, and the mixture was mixed with a ball mill for 20 times.
Mill for hours.

Further, the slurry thus obtained is dried, and after removing the acetone, it is pulverized by a raker. The mixed powder raw material thus obtained was placed in a mold at 5 MPa.
It is pressure-molded at a pressure of 2 and is fired in the air at 900 ° C. for 2 hours to obtain a dielectric material.

When the relative density of the thus obtained dielectric material was measured, a value of 99% or more was obtained. Further, when the dielectric property was measured at a frequency of 2 GHz, it was confirmed that the Q value measured by the cavity resonator method was 2500 and the relative permittivity was 50.

[0020]

Example 2 Alumina (Al ₂ O ₃ ) ceramic powder having an average particle size of 5 μm and a purity of 99% or more, and an average particle size of 1 μm
m TiO ₂ powder and Ca with an average particle size of 3 μm
A glass powder (GA63 manufactured by Nippon Electric Glass Co., Ltd.) for precipitating MgSi ₂ O ₄ crystals is prepared at a ratio of 10% by volume, 20% by volume and 70% by volume to prepare a mixed powder.
Further, the obtained mixture powder is milled as in the previous case to form a slurry. Also in this case, the alumina ceramic powder is prepared by once calcining at a high temperature of 1500 ° C. or higher and then pulverizing to a predetermined particle size.

Further, the slurry thus obtained is dried and crushed in the same manner as in the above case to form a mixed powder raw material. The obtained mixed powder raw material is pressure-molded and fired in air at 900 ° C. for 2 hours to obtain a dielectric material.

When the relative density of the dielectric material thus obtained was measured, a value of 99% or more was obtained. Further, when the dielectric characteristics were measured at a frequency of 2 GHz, it was confirmed that the Q value measured by the cavity resonator method was 3500 and the relative dielectric constant was 40.

[0023]

Example 3 Alumina (Al ₂ O ₃ ) ceramic powder having an average particle size of 5 μm and a purity of 99% or more, and an average particle size of 1 μm
10% by volume and 20% by volume of silica glass powder having a purity of 99% or more by m and aluminoborosilicate glass having an average particle size of 3 μm and a silica (SiO2 component) content of 85% or more, respectively.
A mixed powder is prepared by compounding at a ratio of volume% and 70% by volume. Further, the obtained mixture powder is milled as in the previous case to form a slurry. Also in this case, the alumina ceramic powder is prepared by once calcining at a high temperature of 1500 ° C. or higher and then pulverizing to a predetermined particle size.

Further, the slurry thus obtained is dried and crushed in the same manner as in the case of Example 1 above to form a mixed powder raw material. The obtained mixed powder raw material is pressure-molded and fired in air at 900 ° C. for 2 hours to obtain a dielectric material.

When the relative density of the dielectric material thus obtained was measured, a value of 99% or more was obtained. When the dielectric characteristics were measured at a frequency of 2 GHz, it was confirmed that the Q value measured by the cavity resonator method was 4000 and the relative dielectric constant was 7.

[0026]

Example 4 Ba (Mg _1/3 T with an average particle size of 5 μm
a _2/3 ) O ₃ ceramic powder and Ti with an average particle size of 5 μm
O ₂ powder and glass powder (GA55 manufactured by Nippon Electric Glass Co., Ltd.) having an average particle diameter of 3 μm and precipitating Nd ₂ TiO ₇ crystals were prepared and mixed in the proportions of 20% by volume, 20% by volume and 60% by volume, respectively. Prepare powder. Further, acetone and PVB resin were added to the obtained mixture powder at a ratio of 2% by volume, and milled in a ball mill for 20 hours to form a slurry. In this case, the Ba (Mg _1/3 Ta _2/3 ) O ₃
The ceramic powder is prepared by temporarily calcining at a high temperature of 1500 ° C. or higher and then pulverizing it to a predetermined particle size.

Further, the slurry thus obtained is dried in the same manner as in Example 1 above to remove the solvent, and then pulverized by using a raker machine to form a mixed powder raw material. The obtained mixed powder raw material is pressure-molded in a mold at a pressure of 5 MPa and fired in the air at 900 ° C. for 2 hours to obtain a dielectric material.

When the relative density of the dielectric material thus obtained was measured, a value of 99% or more was obtained. Moreover, when the dielectric property was measured at a frequency of 2 GHz, it was confirmed that the Q value measured by the cavity resonator method was 3500 and the relative dielectric constant was 35.

[0029]

Example 5 BaTi having an average particle size of 5 μm_FourO₉Ceramic
Powder and Nd with an average particle size of 3 μm ₂TiO₇Deposit crystals
Glass powder (GA55 made by Nippon Electric Glass)
20% by volume and 80% by volume, respectively, and mixed
Prepare powder. Further, for the obtained mixture powder,
Add 2% by volume of seton and PVB resin to the balls.
Mill in a mill for 20 hours to form a slurry. this
In the case of BaTi _FourO₉Once the ceramic powder
After being calcined at a high temperature of 1500 ° C or higher, it is powdered to a specified particle size.
It is prepared by crushing.

Further, the slurry thus obtained is dried in the same manner as in Example 1 above, the solvent is removed, and then the slurry is pulverized by using a raker machine to form a mixed powder raw material. The obtained mixed powder raw material is pressure-molded in a mold at a pressure of 5 MPa and fired in the air at 900 ° C. for 2 hours to obtain a dielectric material.

When the relative density of the dielectric material thus obtained was measured, a value of 99% or more was obtained. When the dielectric characteristics were measured at a frequency of 2 GHz, it was confirmed that the Q value measured by the cavity resonator method was 3200 and the relative permittivity was 32.

Table 1 below shows usable electrode materials corresponding to the permittivity, Q value, firing temperature, and firing temperature of the microwave dielectric composition thus formed, and the conventional microwave The results are shown together with the results of comparative experiments performed on the dielectric composition.

[0033]

[Table 1] Referring to Table 1, even though the microwave dielectric compositions obtained in Examples 1 to 5 were fired at a temperature of 900 ° C. at which Ag can be used as an electrode material, The value exceeds 2000, and it can be seen that a high dielectric constant of 30 or more or a low dielectric constant of less than 10 can be realized depending on the application. Since the amorphous glass or crystallized glass used in the present invention has a softening point in the range of 400 to 900 ° C., a low resistance metal electrode such as Ag, Au, or Cu is used as a microwave dielectric composition layer. It becomes possible to form a passive component that is sandwiched between the components by a simple firing process.

The ceramic powder used in the present invention is obtained by once preparing the ceramic raw material at 1500 ° C. as described above.
It has a very high Q value, which was prepared by calcination at the above high temperature and then pulverized to a predetermined particle size. The results of Examples 1 to 5 show that such ceramic raw materials were softened. When used in combination with an amorphous glass or a crystallized glass having a point of 400 to 900 ° C., it is shown that the Q value does not deteriorate or is slight.

On the other hand, in the conventional microwave dielectric composition using alumina powder and glass or CaZrO ₃ powder and glass, even if the firing temperature is set to 1000 ° C. at which Cu can be used as an electrode material, No more than 150
It can be seen that only a Q value of ~ 200 has been realized. This means that even if the ceramic powder itself has a high Q value,
It shows that the Q value of the entire microwave dielectric composition is greatly reduced when dispersed in glass.

As described above, according to the present invention, it becomes possible to realize a microwave dielectric composition suitable for forming an LC circuit or a microstrip line together with a low resistance metal. At that time, each component constituting the microwave dielectric composition is made of the material alone and is 1 GHz or more and 100 GHz or more.
The Q value in the following frequency bands is preferably 1000 or more.

In the present invention, amorphous glass is used.
Oxide ceramic powder dispersed in crystallized glass
The powder is not limited to the above composition,
Ti _FourO₉, Ba₂Ti₉O₂₀, Ba (Zn_1/3Ta_2/3) O
₃, Ba (Zn_1/3Nb_2/3) O_Three, Ba (Mg_1/3Ta
_2/3) O₃, Ba (Co_1/3Ta_2/3) O₃, Ba (Co_{1 / 3}
Nb_2/3) O₃, Ba (Ni_1/3Ta_2/3) O₃And Ti
O₂It is possible to choose from.

In the present invention, Si is used as the amorphous glass.
It is possible to use those in which the total of O ₂ component and Al ₂ O ₃ component is 85% or more.

In the present invention, Ca is used as the crystallized glass.
It is possible to use one that precipitates any one of the crystal phases of SiO ₃ , Nd ₂ TiO ₇ , and CaMgSi ₂ O ₄ .

Further, in the microwave dielectric composition of the present invention, as the third component, alumina having a purity of 99% or more, quartz glass having a purity of 99% or more, CaZrO ₃ , BaTi.
O ₃ , MgO, ZrSnTiO ₄ , CaTiO ₃ , MgT
It is also possible to add either iO ₃ or SrTiO ₃ . [Second Embodiment] FIG. 1 shows the structure of a laminated LC filter 10 using the microwave dielectric composition of the present invention, FIG. 2 shows its equivalent circuit, and FIG. 3 shows its frequency characteristic. .

Referring to FIG. 1, a laminated LC filter 10
Has a structure in which dielectric layers 11, 13 and 15 made of the high dielectric constant microwave dielectric composition of the first, second or fourth and fifth embodiments are laminated, and between the dielectric layers 11 and 13. Is
The electrode layer 12 forming the inductance L of FIG. 2 is formed.

Further, the ground electrode layer 14 is sandwiched between the dielectric layers 13 and 15, and the dielectric layer 15 forms the capacitance Cc and the electrode layer 16 constituting the capacitance C of FIG. The electrode layer 17 is embedded. The electrode layer 16 is connected to the electrode layer 12 via a conductor plug 16A formed in the electrode layer 14 and the dielectric layer 13.

The whole laminated LC filter 10 is covered with the ground electrode 18.

The laminated LC filter 10 having such a structure has a mutual inductance M inside as shown in FIG.
And a pair of LCs coupled by mutual capacitance Cm
A bandpass filter having a resonance circuit and a pass band characteristic as shown in FIG. 3 is configured.

FIG. 4 shows the electrode layers 12, 14, 1 in FIG.
The configurations of 6, 17, and 18 are shown. The cross-sectional view of the laminated LC filter 10 shown in FIG. 1 corresponds to the cross section taken along the broken line in FIG.

Referring to FIG. 4, the electrode layer 12 is composed of two electrode patterns 12A and 12B, and the mutual inductance M of the LC circuit is determined by the distance between the electrode patterns 12A and 12B. The electrode layer 16 is composed of electrode patterns 16C and 16D, and the conductor plug 16A is formed corresponding to the electrode pattern 16C and the conductor plug 16B is formed corresponding to the electrode pattern 16C. In the electrode layer 14, conductor plugs 16A, 1
It can be seen that through holes 14A and 14B are formed corresponding to 6B.

Further, the electrode layer 17 is an electrode pattern 17
The capacitance Cm of FIG. 1 is determined by controlling the distance between the electrode patterns 17A and 17B.

In the present invention, by using the microwave dielectric composition which can be fired at a low temperature as described above, a laminated LC containing metal electrode layers between or inside such dielectric layers.
The filter 10 can be formed by a simple firing process in air. The microwave dielectric composition of the present invention is characterized by a large Q value, and has excellent pass band characteristics. Also, because it has a high dielectric constant,
It is possible to form the laminated LC filter 10 in a small size.

Although not shown, it is possible to construct a microstrip line with less loss by using the low dielectric constant microwave dielectric composition previously described in Example 3.

Although the present invention has been described above with reference to the preferred embodiments, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the claims. is there.

(Supplementary Note 1) Oxide ceramic particles,
An oxide-based amorphous material in which the oxide ceramic particles are dispersed
A high dielectric constant microwave dielectric composition composed of glass
The oxide ceramic particles are made of BaTi._FourO₉，
Ba₂Ti₉O₂₀, Ba (Zn _1/3Ta_2/3) O₃, Ba
(Zn_1/3Nb_2/3) O_Three, Ba (Mg_1/3Ta_2/3)
O₃, Ba (Co_1/3Ta_2/3) O₃, Ba (Co_1/3Nb
_2/3) O₃, Ba (Ni_1/3Ta_{2 / 3}) O₃And TiO₂Yo
Contains at least one ingredient selected from the group consisting of
A high dielectric constant microwave dielectric composition characterized by the above.

(Supplementary Note 2) In the above oxide-based amorphous glass, the total content of SiO ₂ component and Al ₂ O ₃ component is 8
The high dielectric constant microwave dielectric composition according to appendix 1, wherein the glass does not contain Pb in an amount of 5% by weight or more.

(Supplementary Note 3) The high dielectric constant microwave dielectric composition according to claim 1 or 2, wherein the oxide-based amorphous glass has a softening point in the range of 400 to 900 ° C.

(Supplementary Note 4) Each of the oxide ceramic particles and the oxide-based amorphous glass is 1 G alone.
20 in the frequency band from 100 Hz to 100 GHz
The high dielectric constant microwave dielectric composition according to any one of appendices 1 to 3, which has a Q value of 0 or more.

(Supplementary Note 5) Oxide ceramic particles,
Oxide-based crystallization in which the oxide ceramic particles are dispersed
A microwave dielectric composition comprising glass, comprising:
The oxide ceramic particles are made of BaTi._FourO₉, Ba₂T
i₉O₂₀, Ba (Zn _1/3Ta_2/3) O₃, Ba (Zn_1/3
Nb_2/3) O_Three, Ba (Mg_1/3Ta_2/3) O₃, Ba (C
o_1/3Ta_2/3) O₃, Ba (Co_1/3Nb_2/3) O₃, Ba
(Ni_1/3Ta_{2 / 3}) O₃And TiO₂Selected from the group consisting of
Characterized by containing at least one selected ingredient
A high dielectric constant microwave dielectric composition.

(Supplementary Note 6) The oxide-based crystallized glass is composed of CaSiO ₃ , Nd ₂ TiO ₇ and CaMgSi ₂ O.
6. The high dielectric constant microwave dielectric composition according to appendix 5, wherein any one of the crystal phases of ₄ is precipitated.

(Supplementary Note 7) The oxide-type crystallized glass is a glass that does not contain Pb and has a softening point in the range of 400 to 900 ° C., which is the high dielectric constant microwave of Supplementary Note 5 or 6. Dielectric composition.

(Supplementary Note 8) Each of the oxide ceramic particles and the oxide-based crystallized glass has a Q of 200 or more in a frequency band of 1 GHz or more and 100 GHz or less.
The high dielectric constant microwave dielectric composition according to any one of appendices 5 to 7, which has a value.

(Supplementary Note 9) As the third component, alumina having a purity of 99% or more, quartz glass having a purity of 99% or more,
CaZrO ₃ , BaTiO ₃ , MgO, ZrSnTi
9. The high dielectric constant microwave dielectric composition according to any one of appendices 1 to 8, which contains at least one of O ₄ , CaTiO ₃ , MgTiO ₃ , and SrTiO ₃ .

(Supplementary Note 10) The high dielectric constant microwave dielectric composition according to any one of Supplementary Notes 1 to 9, which has a bulk density of 98% or more when fired at 900 ° C.

(Supplementary Note 11) A low dielectric constant microwave dielectric composition comprising alumina particles having a purity of 99% or more and oxide-based amorphous glass in which the alumina particles are dispersed.

(Supplementary Note 12) The supplementary note 11 characterized in that the oxide-based amorphous glass is a Pb-free glass in which the total of SiO ₂ component and Al ₂ O ₃ component is 85% by weight or more. Low dielectric constant microwave dielectric composition of.

(Supplementary note 13) The low dielectric constant microwave dielectric composition according to supplementary note 11 or 12, wherein the oxide-based amorphous glass has a softening point in the range of 400 to 900 ° C.

(Additional remark 14) Each of the above-mentioned alumina and oxide-based glass has a Q value of 200 or more in a frequency band of 1 GHz or more and 500 GHz or less. Low dielectric constant microwave dielectric composition of.

(Supplementary Note 15) A low dielectric constant microwave dielectric composition comprising alumina particles having a purity of 99% or more and oxide crystallized glass in which the alumina particles are dispersed.

(Supplementary Note 16) The crystallized glass is Ca
16. The low dielectric constant microwave dielectric composition according to appendix 15, wherein a crystal phase of any one of SiO ₃ , Nd ₂ TiO ₇ and CaMgSi ₂ O ₄ is deposited.

(Supplementary Note 17) Supplementary Note 11 characterized in that the bulk density when fired at 900 ° C. is 98% or more.
16. The low dielectric constant microwave dielectric composition according to claim 1.

[0068]

According to the present invention, ceramic particles having a high Q value and amorphous glass or crystallized glass having a high Q value are used in combination to obtain a temperature of about 900 ° C.
A microwave dielectric composition which can be fired at the following low temperatures, has a very high Q value, and has a high dielectric constant or a low dielectric constant is obtained.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a laminated LC filter according to a second embodiment of the present invention.

FIG. 2 is a diagram showing an equivalent circuit of the laminated LC filter of FIG.

FIG. 3 is a diagram showing frequency characteristics of the laminated LC filter of FIG.

FIG. 4 is a diagram showing a pattern of electrode layers used in the laminated LC filter of FIG.

[Explanation of symbols]

11, 13, 15 Microwave dielectric composition layer 12, 14, 16, 17 Electrode layer 16A, 16B conductor plug 18 Ground electrode layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C04B 35/46 H01B 3/02 A C04B 35/00 J 35/49 35/10 D H01B 3/02 35 / 16 ZF Term (reference) 4G030 AA07 AA08 AA10 AA16 AA17 AA20 AA21 AA28 AA29 AA32 AA37 AA39 BA09 CA01 4G031 AA03 AA04 AA06 AA11 AA14 AA15 CB33 CB33 A02 CB03 A01 AA22 AA30 AA30 AA30 AA30 AA30 CB38 CC08

Claims (10)

[Claims] 1. Oxide ceramic particles and the oxide
It is called oxide-based amorphous glass in which ceramic particles are dispersed.
A high dielectric constant microwave dielectric composition comprising: The oxide ceramic particles are made of BaTi._FourO₉, Ba₂
Ti₉O₂₀, Ba (Zn _1/3Ta_2/3) O₃, Ba (Zn
_1/3Nb_2/3) O_Three, Ba (Mg_1/3Ta_2/3) O₃, Ba
(Co_1/3Ta_2/3) O₃, Ba (Co_1/3Nb_2/3) O₃，
Ba (Ni_1/3Ta_{2 / 3}) O₃And TiO₂A group of
Characterized by containing at least one component selected from
And a high dielectric constant microwave dielectric composition. 2. The oxide-based amorphous glass is 400 to
The high dielectric constant microwave dielectric composition according to claim 1, having a softening point in the range of 900 ° C. 3. Oxide ceramic particles and the oxide
It is called oxide crystallized glass in which ceramic particles are dispersed.
A microwave dielectric composition comprising: The oxide ceramic particles are made of BaTi._FourO₉, Ba₂
Ti₉O₂₀, Ba (Zn _1/3Ta_2/3) O₃, Ba (Zn
_1/3Nb_2/3) O_Three, Ba (Mg_1/3Ta_2/3) O₃, Ba
(Co_1/3Ta_2/3) O₃, Ba (Co_1/3Nb_2/3) O₃，
Ba (Ni_1/3Ta_{2 / 3}) O₃And TiO₂A group of
Characterized by containing at least one component selected from
And a high dielectric constant microwave dielectric composition. 4. The oxide-based crystallized glass is CaSi.
The crystal phase of any one of O ₃ , Nd ₂ TiO ₇ and CaMgSi ₂ O ₄ , TiO ₂ is precipitated.
A high dielectric constant microwave dielectric composition as described. 5. The high dielectric constant microwave dielectric material according to claim 3, wherein the oxide-based crystallized glass is a glass not containing Pb and has a softening point in the range of 400 to 900 ° C. Body composition. 6. Further, as a third component, alumina having a purity of 99% or more, quartz glass having a purity of 99% or more, CaZrO.
₃ , BaTiO ₃ , MgO, ZrSnTiO ₄ , CaTi
The high dielectric constant microwave dielectric composition according to any one of claims 1 to 5, comprising at least one of O ₃ , MgTiO ₃ , and SrTiO ₃ . 7. A low dielectric constant microwave dielectric composition comprising alumina particles having a purity of 99% or more and oxide-based amorphous glass in which the alumina particles are dispersed. 8. The oxide-based amorphous glass is 400 to
The low dielectric constant microwave dielectric composition according to claim 7, which has a softening point in the range of 900 ° C. 9. A low dielectric constant microwave dielectric composition comprising alumina particles having a purity of 99% or more and oxide crystallized glass in which the alumina particles are dispersed. 10. The crystallized glass is CaSiO ₃ ,
The low dielectric constant microwave dielectric composition according to claim 9, wherein a crystal phase of any one of Nd ₂ TiO ₇ , CaMgSi ₂ O ₄ , and TiO ₂ is deposited.