JP2003149830A - Development processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a cost by eliminating the need for newly disposing a gas removing facility, etc., within a factory by accompanying the movement of a development processing device. SOLUTION: The development processing device which has a cup having a processing chamber for applying development and cleaning processing to a wafer and discharges the processes liquid produced in a process chamber as a waste liquid to a drain is formed by disposing a deaeration module 73 for removing the dissolved gas from the processed liquid in mid-way of the discharge path between the process chamber and the drain, which deaeration module 73 is equipped with a vessel 77 having a port 80 for inflow connected to the process chamber side and a port 81 for outflow connected to the drain side and a port 82 for discharge for discharging the dissolved gas and further is provided with a semipermeable membrane tube 78 for gas permeation existing within the vessel 77.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a development processing apparatus suitable for use in a manufacturing process of semiconductor devices, liquid crystal displays and the like.

[0002]

2. Description of the Related Art For example, in a photolithography process in manufacturing a semiconductor device, a resist coating process for coating a resist solution on the surface of a semiconductor wafer (hereinafter referred to as "wafer") A development process of performing development after performing an exposure process is performed. Then, a resist coating processing unit is used for the resist coating processing, and a developing processing unit is used for the developing processing.

Among them, the development processing apparatus unit includes a development processing apparatus having a processing chamber for performing development / cleaning processing on a wafer, and an exposure-processed wafer is attracted and held and rotated in the processing chamber of the development processing apparatus. And a developing solution supply nozzle for supplying a developing solution to the wafer on the spin chuck. Further, a rinse liquid supply nozzle for discharging a rinse liquid (for example, hydrogen water or functional water such as ozone) for cleaning and removing the developer on the wafer after the development processing is provided.

Using such a development processing unit,
The wafer is developed and cleaned. In this case, the processed liquid of the developing / cleaning liquid discharged from the developing / rinsing liquid supply nozzle when the developing / cleaning liquid is supplied onto the wafer is
The waste liquid is discharged from the processing chamber of the development processing device to the drain of the factory.

[0005]

By the way, in the above-mentioned development processing apparatus, since the processed liquid is discharged as it is to the drain or the like as a waste liquid, the waste liquid may corrode factory equipment such as pipes and valves. is there. This is because a gas having a developing / cleaning effect is dissolved in the developing / cleaning liquid (processed liquid), and the processed liquid is discharged to the drain or the like while containing this gas. Therefore, it is necessary to install equipment (gas removal equipment) for removing the gas dissolved in the treated liquid in the factory. On the other hand, the development processing apparatus (development processing apparatus unit) described above is configured to be moved and installed by changing the layout of the factory. As a result, with the movement of the development processing device, it is necessary to newly install a gas removal facility or the like in the factory each time, and there is a problem that the cost increases.

The present invention has been made in order to solve such a technical problem, and it is not necessary to newly provide a gas removing facility or the like by moving the developing processing apparatus, and hence cost reduction can be achieved. It is an object to provide a development processing apparatus.

[0007]

SUMMARY OF THE INVENTION A development processing apparatus according to the present invention made to achieve the above object comprises a cup having a processing chamber for developing and cleaning a substrate. A development processing apparatus for discharging the generated processed liquid to a drain as a waste liquid, which is a degassing device for removing gas dissolved in the processed liquid in the discharge path between the processing chamber and the drain. A module is provided, and this degassing module includes a container having an inflow port connected to the processing chamber side and an outflow port connected to the drain side, and an exhaust port for exhausting the gas, Furthermore, it is characterized in that it is provided with a hollow fiber membrane for gas permeation located in this container.

With the above-mentioned structure, the treated liquid flows into the container through the inflow port. Then, the gas dissolved in the treated liquid is exhausted out of the container through the exhaust port, and the treated liquid excluding the dissolved gas flows out of the container through the outflow port as waste liquid. In this way, the gas dissolved in the treated liquid is removed by the hollow fiber membrane of the degassing module, and the treated liquid excluding the dissolved gas is discharged to the drain in the factory as waste liquid. Therefore, since the waste liquid does not corrode the factory equipment, it is not necessary to newly install a gas removal equipment or the like in the factory when the development processing apparatus is moved, and the cost can be reduced.

Here, it is preferable that the hollow fiber membrane is formed by a tubular body connected to the inflow port and the outflow port. With this configuration, the treated liquid flows from the inflow port into the tubular body, and the gas dissolved in the treated liquid permeates the tubular body and flows into the container. Further, it is desirable that a vacuum pump is connected to the exhaust port via an exhaust pipe. With this configuration, the gas dissolved in the treated liquid in the container is exhausted from the exhaust port into the exhaust pipe by the vacuum pump.

On the other hand, in a developing apparatus according to another invention of the present invention, a valve provided in each port for opening and closing each port provided in the container, and an exhaust port of these valves are opened and closed. It is preferable that the vacuum pump is disposed on the downstream side of the valve, and the vacuum pump is connected to the exhaust port via an exhaust pipe. With this configuration, the gas dissolved in the treated liquid in the container is removed by the degassing module, and the treated liquid excluding the dissolved gas is discharged as drainage to the drain in the factory. In this case, when the inflow port is opened by opening the valve, the treated liquid flows into the container through the inflow port. When the exhaust port is opened by opening the valve, the gas dissolved in the processed liquid in the container is exhausted from the exhaust port into the exhaust pipe by the vacuum pump. Then, when the outflow port is opened by opening the valve, the treated liquid excluding the dissolved gas flows out of the container as a waste liquid from the outflow port.
Therefore, the factory equipment will not be corroded by the waste liquid,
It is not necessary to newly install a gas removal facility or the like in the factory due to the movement of the development processing apparatus, and the cost can be reduced.

Here, it is preferable that the inner volume of the container is set to be equal to or more than the amount of the processed liquid generated in one development / cleaning process on the substrate. With this structure, a space is formed above the processed liquid stored in the container for one development / cleaning process, and the gas dissolved in the processed liquid is stored in the container by the vacuum pump. It is surely exhausted to the outside. Further, a concentration sensor that detects the concentration of gas dissolved in the treated liquid is arranged on the upstream side of the degassing module, and the vacuum pump is driven and controlled by the concentration sensor according to the detected concentration of the gas. It is desirable that the controller to be connected be connected. With such a configuration, the vacuum pump is driven by the controller when the concentration of the gas dissolved in the treated liquid reaches a predetermined concentration.

Further, it is desirable that a filter made of a catalyst for decomposing the gas is disposed in the exhaust pipe. With this configuration, the gas dissolved in the treated liquid is decomposed when passing through the filter. As a result, even if the gas reaches the vacuum pump, its corrosion is prevented. Furthermore, it is desirable that a tank capable of containing the treated liquid is disposed upstream of the degassing module. With this configuration, the treated liquid is temporarily stored in the tank before the gas is removed.

It is desirable that a plurality of the deaeration modules be connected in series to the drain. With this configuration, the gas removal process in one liquid process is continuously performed a plurality of times. This enhances the gas removal effect. Further, it is desirable that a plurality of the deaeration modules are arranged in parallel with the drain. With this configuration, the gas removal process in the liquid process is performed a plurality of times at the same time. This shortens the time required to remove the gas dissolved in the treated liquid. Further, it is desirable that the cup or the degassing module is arranged in a housing for a coating and developing treatment apparatus unit. With this configuration, the coating and developing treatment device unit (developing treatment device)
Even if the liquid is moved, it is possible to discharge it to a normal drain without requiring a new waste liquid facility.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a developing processing apparatus according to the present invention will be described based on an embodiment shown in the drawings. Prior to the description of the development processing apparatus, the coating and development processing apparatus unit will be described with reference to FIGS. 1 to 3 are a plan view, a front view, and a rear view showing an outline of a coating and developing treatment apparatus unit including a developing treatment apparatus to which the present invention is applied. As shown in FIG. 1, the coating and developing treatment apparatus unit 1 includes, for example, a cassette station 2 for loading 25 wafers W from the outside in a cassette unit and unloading the wafer W to a cassette C, and a coating and developing treatment process. It is provided with a processing station 3 in which various processing devices for performing a predetermined processing in a single-wafer type are arranged in multiple stages. Furthermore, the processing station 3 is provided with an interface section 4 for transferring the wafer W to and from an exposure apparatus (not shown) adjacent to the processing station 3.

The coating and developing treatment apparatus unit 1 is composed of a first treatment apparatus group G1 to a fourth treatment apparatus group G4. The first processing device group G1 and the second processing device group G2 are arranged on the front side of the coating and developing processing device unit 1, and the third processing device group G3 is arranged adjacent to the cassette station 2. The fourth processing unit group G4 is arranged adjacent to the interface unit 4. Further, as a option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side of the coating and developing treatment unit 1.

In the cassette station 2, a plurality of cassettes C can be placed at a predetermined position on the cassette placing section 5 in a line along the arrow X direction (vertical direction in FIG. 1). A wafer carrier 7 that can be moved in the cassette arranging direction (X direction) and the wafer arranging direction (Z direction) is movably arranged along the carrier path 8 to selectively access each cassette C. Is configured to get.

The wafer carrier 7 has an alignment function for aligning the wafer W. This wafer carrier 7 is provided with an extension device 32 belonging to the third processing device group G3 of the processing station 3, as will be described later.
It is also configured to be accessible to (as shown in FIG. 3).

At the center of the processing station 3, a main carrier 13 is arranged. This main carrier 1
Various processing devices are arranged in multiple stages around 3 to form a processing device group. The main transfer device 13 is capable of loading / unloading the wafer W into / from various processing devices, which will be described later, arranged in the processing device groups G1 to G5. Note that the number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W. The number of processing device groups may be arbitrarily selected as long as it is plural.

In the first processing unit group G1, as shown in FIG. 2, a resist coating unit 17 for coating the wafer W with a resist solution and a developing unit 18 for developing the exposed wafer W are arranged from below. It is stacked in two steps in order. Similarly, in the second processing device group G2, the resist coating device 19 and the development processing device 20 are stacked in two stages in order from the bottom.

In the third processing device group G3, as shown in FIG. 3, a cooling device 30 for cooling the wafer W is used.
An adhesion device 31 for improving the fixability of the resist liquid and the wafer W, an extension device 32 for waiting the wafer W, pre-baking devices 33 and 34 as heat treatment devices, and a heat treatment after the development treatment. The post-baking devices 35 and 36 to be applied are stacked in order from the bottom, for example, in seven stages.

In the fourth processing device group G4, a cooling device 40, an extension cooling device 41 for naturally cooling the mounted wafer W, an extension device 42, a cooling device 43, and a post-exposure heating process are applied. Post exposure baking equipment 44,4
5 and the post-baking devices 46, 47, etc. are stacked in eight steps in order from the bottom.

A wafer carrier 50 is arranged at the center of the interface section 4. This wafer carrier 5
0 is configured to move in the arrow X direction and the arrow Z direction and rotate in the θ direction (around the Z axis).
Then, the extension / cooling device 41 and the extension device 42 belonging to the fourth processing device group G4 and the peripheral exposure device 51 are accessed to transfer the wafer W to each device.

Next, referring to FIG.
A detailed description will be given with reference to FIGS. 5 (a) and 5 (b). FIG. 4 is a sectional view schematically showing the development processing apparatus according to the first embodiment of the present invention. 5A and 5B are cross-sectional views showing the entire degassing module of the development processing apparatus according to the first embodiment of the present invention and a main part (A part) thereof. Figure 4
Development processing units 18 and 20 shown in FIG. 1 (also shown in FIGS. 1 and 2)
Has a cup 72 and a degassing module 73, and is arranged inside a housing 71 for a coating and developing treatment apparatus unit. Then, the gas dissolved in the processed liquid such as the developing / cleaning liquid generated in the cup 72 is removed by the degassing module 73, and the processed liquid from which the dissolved gas is removed is drained to the drain 74. It is configured to discharge.

Further, the development processing devices 18 and 20 are provided with a tank 75 capable of containing the processed liquid on the cup side of the degassing module 73. The deaeration module 73 and the tank 75 are arranged in the middle of a discharge passage 79 connecting the cup 72 and the drain 74. The discharge passage 79 includes a first discharge passage 79a interposed between the cup 72 and the tank 75,
It is composed of a second discharge passage 79b interposed between the tank 75 and the degassing module 73 and a third discharge passage 79c interposed between the degassing module 73 and the drain 74.

The cup 72 has a processing chamber S for performing liquid processing such as development and cleaning processing on the wafer W. A spin chuck 76 is arranged inside the cup 72. The spin chuck 76 has a drive motor (not shown) with the wafer W fixedly held by vacuum suction.
It is driven to rotate by. In addition, the spin chuck 7
Above the surface of the wafer W, a developing solution supply nozzle for supplying a developing solution and a rinse solution supply nozzle for supplying a cleaning solution (both not shown) are movably arranged on the surface of the wafer W.

The degassing module 73 has a container 77 and a semipermeable membrane tube 78 as shown in FIG.
It is arranged between the second discharge passage 79b and the third discharge passage 79c. Then, the gas dissolved in the treated liquid is removed. The container 77 has an inflow port 80 connected to the cup 72 side (second discharge path 79b) and the drain 74 side (third discharge path 79).
It has an outflow port 81 connected to c). Also,
It has an exhaust port 82 for discharging the gas dissolved in the treated liquid in the container 77 to the outside.

On the other hand, the semipermeable membrane tube 78 is arranged in the container 77 and connected to both the ports 80 and 81. The whole is formed of a hollow fiber membrane of, for example, ethylene tetrafluoride or polyolefin. As a result, a vacuum pump (vacuum pressure 5 k
When the treated liquid flows into the semipermeable membrane tube 78 during driving (about Pa), the gas dissolved in the treated liquid permeates the semipermeable membrane tube 78 as indicated by an arrow in FIG. 5B. It is configured to flow from the container 77 into the discharge pipe 83.

The discharge pipe 83 is connected to the container 77 via the exhaust port 82. This discharge pipe 8
A vacuum pump 84 is connected to the downstream side of 3. The vacuum pump 84 is configured to be driven by the controller 86 when the concentration of the gas dissolved in the treated liquid is detected by the concentration sensor 85. As a result, it is not necessary to constantly operate the vacuum pump 84, and power consumption can be reduced. The concentration sensor 85
Are arranged on the upstream side of the degassing module 73 and are connected to the controller 86. Further, a filter 87 is arranged in the discharge pipe 83. The filter 87 is made of, for example, a noble metal catalyst such as platinum or palladium or a metal honeycomb catalyst such as Fe—Cr—Al, and is configured to decompose the gas separated from the treated liquid by the degassing module 73.

As shown in FIG. 4, the tank 75 has an internal space defined by a partition wall 75a.
It is divided into 5B. The treated liquid from the cup 72 can be temporarily stored in the tank 75 before the gas is removed. As a result, the gas containing the acid and alkali components dissolved in the treated liquid temporarily stored in the tank 75 is discharged and decomposed by the catalyst. The first chamber 75A is connected to the first exhaust passage 79a, and the second chamber 75B is connected to the exhaust passage 75C and the second exhaust passage 79b. Further, a filter (not shown) made of a catalyst for decomposing gas dissolved in the treated liquid is arranged in the exhaust passage 75C. In addition, in order to prevent the backflow of the gas to the cup side, the gas is constantly exhausted from the exhaust passage 75c.

With the above configuration, when the liquid processing on the wafer W is started, the processed liquid generated in the processing chamber S of the cup 72 flows into the first discharge passage 79a and further into the tank 75. Be accommodated. And tank 7
When the inside of the first chamber 75A of No. 5 overflows with the treated liquid, the treated liquid flows from the first chamber 75A into the second chamber 75B, and further from the second chamber 75B to the second discharge passage 79b. At this time, part of the gas dissolved in the treated liquid in the tank 75 flows into the exhaust passage 75C and is exhausted to the outside.

The treated liquid flows from the second discharge passage 79b into the semipermeable membrane tube 78 through the inflow port 80. In this case, the concentration sensor 85 detects the concentration of the gas dissolved in the treated liquid that has reached the vicinity of the inflow port 80. If this density is out of the predetermined density, a detection signal from the density sensor 85 is sent to the controller 8
6 and the vacuum pump 84 is driven. The vacuum pump 84 is driven and stopped for a predetermined time (time until the density is reduced to a target value) preset for each of a plurality of density regions. Therefore, the gas dissolved in the treated liquid in the semipermeable membrane tube 78 passes through the semipermeable membrane tube 78 and is exhausted to the outside from the exhaust port 82 via the exhaust pipe 83. On the other hand, the treated liquid from which the gas has been removed (exhausted) passes through the semipermeable membrane tube 78, flows from the outflow port 81 to the third discharge passage 79 c, and further to the drain 74.

Therefore, in this embodiment, the gas dissolved in the treated liquid is removed by the degassing module 73, and the treated liquid excluding the dissolved gas is discharged to the drain 74 in the factory as a waste liquid. As a result, the factory equipment is not corroded by the waste liquid, so that it is not necessary to newly install a gas removal equipment or the like in the factory when the development processing apparatus is moved, and the cost can be reduced.

Next, the developing processing apparatus of the second embodiment will be described in detail with reference to FIGS. 4 and 6. Figure 6
It is sectional drawing which shows the whole deaeration module of the development processing apparatus which concerns on 2nd embodiment of this invention. The components (cup, tank, etc.) other than the degassing module of the developing device in this embodiment are the same as those in the first embodiment, and therefore detailed description of the components will be omitted. The degassing module 73 of the development processing devices 18, 20 (shown in FIGS. 1 and 2) in this embodiment has a container 92 and valves 93 to 95, and has the second discharge passage 79b and the third discharge passage 79c. It is located between and. Then, it is configured to remove the gas dissolved in the treated liquid.

As shown in FIG. 6, the container 92 has an inflow port 96 connected to the cup 72 side (second discharge passage 79b) and the drain 74 side (third discharge passage 79).
It has an outflow port 97 connected to c). Also,
It has an exhaust port 98 for discharging the gas dissolved in the treated liquid in the container 92 to the outside. The exhaust port 98 is connected to the vacuum pump 84 via the exhaust pipe 83. The inner volume of the container 92 is larger than the inner volume of the processed liquid amount generated in one development / cleaning process on the wafer W (about twice).
Is set to the volume of.

The valves 93 to 95 are electromagnetic valves driven by the controller 86. The valve 93 is arranged in the middle of the second discharge passage 79b (on the upstream side of the concentration sensor 85), and the valve 94 is arranged in the middle of the third discharge passage 79c. Also,
The valve 95 is arranged in the middle of the discharge pipe 83. Then, the valve 93 is connected to the inflow port 96.
The valve 94 is configured to open and close the outflow port 97. Further, the valve 95 is configured to open and close the exhaust port 98. That is, the valve 93 is opened and the valves 94 and 95 are closed before and during the liquid processing of the wafer W. When the liquid processing on the wafer W is completed, the valves 93 and 94 are closed and the valve 95 is opened. When discharging the waste liquid to the drain 74, the valves 93 and 94 are opened and the valve 95 is closed.

With the above configuration, when the liquid processing on the wafer W is started, the processed liquid generated in the processing chamber S of the cup 72 flows into the first discharge passage 79a and further into the tank 75. Be accommodated. In this case, the valve 93 is opened and the valves 94 and 95 are closed. Then, when the inside of the first chamber 75A of the tank 75 overflows with the treated liquid, the treated liquid flows from the first chamber 75A to the second chamber 75A.
B in the second chamber 75B to the second discharge passage 79
Flow to b. At this time, part of the gas dissolved in the treated liquid in the tank 75 flows into the exhaust passage 75C and is exhausted to the outside. The treated liquid flows from the second discharge passage 79b into the container 92 through the valve 93 and the inflow port 96.

When the liquid processing on the wafer W is completed, the controller 93 closes the valve 93 and opens the valve 95. The valve 9
No. 4 remains closed. In this state, when the concentration of the gas dissolved in the treated liquid passing near the inflow port 80 is a predetermined concentration, this concentration is detected by the concentration sensor 85 and the controller 86 drives the vacuum pump 84. It Therefore, the gas dissolved in the treated liquid flowing in the container 92 is exhausted to the outside from the exhaust port 98 via the exhaust pipe 83.

After that, when the exhaust of the above-mentioned gas is completed, the controller 86 opens the valves 93 and 94 and closes the valve 95. Then, the treated liquid from which the gas has been removed flows from the outflow port 97 to the third discharge passage 79c and further to the drain 74.

Therefore, in the present embodiment, as in the first embodiment, the gas dissolved in the treated liquid is removed by the degassing module 73, and the treated liquid excluding this dissolved gas is used as waste liquid in the factory. It is discharged to the drain 74. As a result, the factory equipment is not corroded by the waste liquid, so that it is not necessary to newly install a gas removal equipment or the like in the factory when the development processing apparatus is moved, and the cost can be reduced. In addition, a space is formed above the processed liquid stored in the container 92 for one development / cleaning process, and the gas dissolved in the processed liquid in the container 92 is evacuated by the vacuum pump 84 to the container 92. It can be reliably exhausted to the outside.

In each of the embodiments, the case where the liquid treatment is performed by a single degassing module has been described, but the present invention is not limited to this, and the degassing module as shown in FIG. 7 and FIG. There may be a plurality. In FIG. 7, a plurality (two) of degassing modules 100 are connected in series to the drain 74. As a result, the gas removal treatment in one liquid treatment is performed twice consecutively, and the effect of removing the gas dissolved in the treated liquid is enhanced. In this case, when a plurality of developer units (cups 72) are connected in a single device, the amount of waste liquid due to the processed liquid also increases, so the degassing module 100 having a relatively large capacity shown in FIG. Modules may be used. Further, the degassing module shown in FIG. 6 is used as the upstream degassing module 100, and the downstream degassing module 1
The degassing module shown in FIG. 5 may be used as 00.
Furthermore, the concentration sensors K1 and K2 shown in FIG. 7 are arranged on the upstream side of each degassing module 100, and the detection values of the gas concentration are set respectively. Then, the vacuum pump 84 is operated until the gas concentration falls to the set target value (value lower than the set detection value).
Is driven.

In FIG. 8, a plurality (two) of degassing modules 101 are arranged in parallel with the drain 74. As a result, the gas is removed simultaneously in the liquid treatment twice, and the work time for removing the gas dissolved in the treated liquid is shortened.

Further, in each of the embodiments, the case where the invention is applied to the developing processing apparatus for the wafer W in the manufacturing process (photolithography process) of the semiconductor device has been described, but the present invention is not limited to this and, for example, in a liquid crystal display. The present invention can be applied to a substrate developing apparatus in a manufacturing process, a mask substrate manufacturing process, or the like as in the embodiment.

[0043]

As is apparent from the above description, according to the development processing apparatus of the present invention, it is not necessary to newly install a gas removal facility or the like in the factory when the development processing apparatus is moved, and the cost is reduced. Can be achieved.

[Brief description of drawings]

FIG. 1 is a plan view showing the outline of a coating and developing treatment apparatus unit including a developing treatment apparatus to which the present invention is applied.

FIG. 2 is a front view showing an outline of a coating and developing treatment apparatus unit including a developing treatment apparatus to which the present invention is applied.

FIG. 3 is a rear view showing an outline of a coating and developing treatment apparatus unit including a developing treatment apparatus to which the present invention is applied.

FIG. 4 is a sectional view schematically showing a development processing apparatus according to the first embodiment of the present invention.

5A and 5B are cross-sectional views showing an entire degassing module of the development processing apparatus according to the first embodiment of the present invention and a main part thereof.

FIG. 6 is a cross-sectional view showing the entire degassing module of the development processing apparatus according to the second embodiment of the present invention.

FIG. 7 is a schematic view showing a modified example (1) of the development processing apparatus according to each embodiment of the present invention.

FIG. 8 is a schematic diagram showing a modified example (2) of the development processing apparatus according to each embodiment of the present invention.

[Explanation of symbols]

18, 20 Development processor 71 housing 72 cups 73 Degassing module 74 drain 75 tanks 76 Spin chuck 77 containers 78 Semi-permeable membrane tube 79 discharge path 80 inflow port 81 Outflow port 82 Exhaust port 83 Discharge pipe 84 Vacuum pump 85 Concentration sensor 86 controller 87 Filter S processing room W wafer

Claims (11)

[Claims] 1. A development processing apparatus comprising a cup having a processing chamber for developing and cleaning a substrate, and discharging a processed liquid generated in the processing chamber to a drain as a waste liquid. A degassing module for removing a gas dissolved in the treated liquid is disposed in the middle of the discharge path between the drain and the drain, and the degassing module is provided with an inflow port connected to the processing chamber side and A container having an outflow port connected to the drain side and an exhaust port for exhausting the gas, and further comprising a hollow fiber membrane for gas permeation located in the container, Development processing device. 2. The development processing apparatus according to claim 1, wherein the hollow fiber membrane is formed by a tubular body connected to the inflow port and the outflow port. 3. The development processing apparatus according to claim 1, wherein a vacuum pump is connected to the exhaust port via an exhaust pipe. 4. A valve provided in each port for opening and closing each port provided in the container, and a vacuum pump arranged downstream of the valve opening and closing the exhaust port among these valves. The development processing apparatus according to claim 1 or 2, wherein the vacuum pump is connected to the exhaust port via an exhaust pipe. 5. The internal volume of the container is set to an internal volume equal to or larger than the amount of a processed liquid generated in a single development / cleaning process for the substrate. The development processing apparatus described in any one. 6. A concentration sensor for detecting the concentration of a gas dissolved in the treated liquid is arranged upstream of the degassing module, and the vacuum pump is provided with the concentration sensor according to the detected concentration of the gas. The developing processing apparatus according to claim 3, further comprising a controller for driving and controlling the developing device. 7. The development processing apparatus according to claim 3, wherein a filter made of a catalyst for decomposing the gas is provided in the exhaust pipe. 8. The developing process according to claim 1, wherein a tank capable of containing the processed liquid is disposed upstream of the degassing module. apparatus. 9. The development processing apparatus according to claim 1, wherein a plurality of the deaeration modules are connected in series to the drain. 10. The development processing apparatus according to claim 1, wherein a plurality of the deaeration modules are arranged in parallel with the drain. 11. The development processing apparatus according to claim 1, wherein the cup or the degassing module is arranged in a housing for a coating and development processing apparatus unit.