JP2003142384A - Liquid treatment device and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique which enables the user to obtain a mask pattern high in equality of line width by forming a liquid film of a developer on the surface of a substrate, while suppressing the flow and the ripple within the developer, when performing the application of the developer by a scanning method to the substrate. SOLUTION: A supply nozzle, which can shift from one end side of a wafer W to the other end side, is prepared above a wafer W held horizontally, and this supply nozzle is provided with a rotor which can rotate freely about a horizontal axis orthogonal to the direction of progress of the supply nozzle in question. This rotor is cylindrical, and the surface is provided with discharge ports for a developer arranged linearly in the axial direction, along the circumference at equal intervals. At supplying of a developer, the rotor is rotated, and also the supply of a developer is performed from the discharge port, and in such a condition, that the supply nozzle is shifted, whereby a liquid film is formed over the entire surface of the wafer W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for supplying a developing solution to the surface of a substrate which has been coated with a resist and which has been exposed to perform the developing process.

[0002]

2. Description of the Related Art A resist pattern (mask) required for forming a circuit pattern on a semiconductor wafer (hereinafter referred to as a wafer) or an LCD substrate for a liquid crystal display is formed by the following steps. That is, first, a photoresist solution (hereinafter referred to as resist) is applied to the surface of the wafer, and then light or the like is applied. If the resist is, for example, a negative type, the portion exposed to light is cured, and the non-cured portion, that is, the easily soluble portion of the resist is dissolved by a developing solution, and then the target resist is obtained by cleaning the wafer surface with a cleaning solution. A pattern is formed.

The supply of the developing solution in such a series of steps is performed by a method called a scanning method as shown in FIG. 9, for example. That is, according to this method, a large number of ejection holes 11 are arranged along the length corresponding to the diameter direction of the wafer W.
First, the supply nozzle 12 provided with is disposed outside the peripheral edge of the horizontally held wafer W, and is moved from this position to the outside peripheral edge of the wafer W while discharging the developing solution. As a result, a liquid film of the developing solution is formed on the surface of the wafer W.

[0004]

However, when the supply nozzle 12 moves from one end side (front side) of the wafer W toward the other end side (back side), the end portion of the wafer W moves outward due to surface tension. The phenomenon of so-called back-back (pull-back) may occur in which the developing solution stretched to the side is drawn to the surface of the wafer W after the solution has run out. This phenomenon is particularly noticeable at the end portion on the back side of the wafer W. As an example thereof, as shown in FIG. 10A, first, the developer on the surface of the wafer W is connected by the surface tension to the wafer W by the supply nozzle 12. When the extended developing solution is drained, the broken developing solution returns to the end of the wafer W as a reaction to the extended developing solution as shown in FIG. 10B. Although illustration is omitted, even in the front end of the wafer W viewed from the supply nozzle 12, among the coating liquids supplied to the end surface of the wafer W,
There is also a case where the film is stretched back by the developer that travels along the outer edge portion and falls due to its own weight, so that the developer may run out again.

Since the developing solution that causes this backward is subjected to a force that tends toward the center side of the wafer W, a flow toward the center side occurs in the liquid film on the surface of the wafer W, and the backward force is exerted. When it is large, there may be ripples. Further, since the wafer W has a substantially circular shape and the width of the coated region viewed from the supply nozzle 12 is constantly changing, the above-described flow can occur at all the outer periphery of the wafer W. The inventors of the present invention have found that the occurrence of such a flow deteriorates the line width accuracy of the mask pattern obtained after development.

As an attempt to solve the above problems,
For example, a method of providing a knife ring 13 around a horizontally held wafer W with a slight gap as shown in FIG. 11 is also under study. In this method, for example, a knife ring 13 having a sharp tip is used to smooth out the liquid at the peripheral portion of the wafer W. However, since the discharge pressure of the developing solution at the supply nozzle 12 is as small as its own weight, the knife is used. There is concern that the surface tension of the liquid acts on the liquid draining surface of the ring 13 and smooth liquid draining may not be performed.

The present invention has been made under the above circumstances, and an object thereof is to apply a processing liquid to a substrate by a scanning method while suppressing the flow and waviness in the processing liquid and the surface of the substrate. Another object is to provide a technique capable of forming a liquid film of a processing liquid.

[0008]

A liquid processing apparatus according to the present invention includes a substrate holding section for holding a substrate horizontally, and a substrate held by the substrate holding section moving from one end side to the other end side. A supply nozzle that supplies the processing liquid to the surface of the substrate is provided. The supply nozzle is configured to rotate around a horizontal axis that is orthogonal to the traveling direction of the supply nozzle, and the substrate is effective for the rotation body. A discharge port that is formed over a length that is substantially the same as or greater than the width of the region and that is arranged in the circumferential direction of the rotating body and that discharges the processing liquid when the rotating body is downward, and for rotating the rotating body. And a drive mechanism.

According to this structure, when the supply nozzle is moved, for example, the developing solution is supplied as the processing solution while rotating the rotator, so that the substrate surface is lined with one line from the ejection port. A liquid film is formed while the developing solution supplied in a state of being connected to each other, and at the same time, the ejection port and the developing solution on the substrate surface are rapidly separated on the rear side in the traveling direction of the rotating body. Therefore, the developer supplied to the surface of the substrate is not stretched by the surface tension between the surface of the rotator and the surface of the rotator, and it is possible to suppress the occurrence of backlash.
The flow and undulation generated in the liquid film of the developer can be reduced, and as a result, the uniformity of the line width in the circuit pattern is improved.

Specifically, for example, the rotating body is a cylindrical body, and an axially extending processing liquid supply pipe that does not rotate when the supply nozzle moves is inserted into the rotating body from the end surface of the rotating body. It is preferable that a supply hole for supplying the processing liquid is formed on the lower surface side of the processing liquid supply pipe and inside the cylindrical body. Further, the rotating body may include a processing liquid supply chamber divided in the circumferential direction, and a discharge port may be formed in each processing liquid supply chamber.

Further, in the above structure, one discharge port is preferably an aggregate of a plurality of minute discharge holes arranged along the axial direction of the rotating body, and the rotating nozzle rotates in the rotating direction. It is preferably downward when viewed from the traveling direction side.

Furthermore, when the substrate is a semiconductor wafer, a control unit for controlling the drive mechanism so as to change the rotation speed of the rotating body according to the supply position of the processing liquid is provided, and this control unit is provided. As compared with the case where the supply nozzle is located at the central portion of the substrate, the number of rotations of the rotating body may be increased until the supply nozzle goes to the other end side beyond the central portion,
By doing so, it is possible to further suppress the occurrence of back-shifting on the other end side of the substrate. In this case, when the supply nozzle separates from the other end side of the substrate, it is more effective to rotate the rotating body at a rotation speed higher than the rotation speed up to that time.

In the liquid processing method according to the present invention, the step of horizontally holding the substrate in the substrate holding portion and the discharge port of the processing liquid over the length of the effective area of the substrate are equal to or more than the width. A step of moving the formed supply nozzles from one end side of the substrate to the other end side, and when performing this step, the supply nozzles are arranged in the circumferential direction of the supply nozzle while rotating the supply nozzles around a horizontal axis. A step of sequentially ejecting the processing liquid onto the substrate from the ejection ports facing downward of the ejection ports.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment in which a liquid processing apparatus according to the present invention is applied to a developing apparatus will be described with reference to FIGS. 2 in the figure
Reference numeral 1 denotes a substrate holding unit that vacuum-sucks a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate from the back surface side and horizontally holds the substrate, which can be rotated and moved up and down by a drive unit 22. In the state where the wafer W is sucked and held by the substrate holding portion 21, a cup 23 is provided on the side of the wafer W so as to surround the wafer W. The cup 23 includes an outer cup 24 and an inner cup 25 that are vertically movable. Composed of. The outer cup 24 is formed in a cylindrical shape on the lower side and a quadrangular tube shape on the upper side. The inner cup 25 is formed such that the upper side of the cylinder is inclined upward inward and the upper opening is narrower than the lower opening. Has been done.

On the lower side of the inner cup 25, there is provided a disc 26 that surrounds the periphery of the substrate holding portion 21, and a liquid receiving portion 27 in which a concave portion is formed around the entire circumference of the disc 26.
The outer cup 24 is slightly inward from the side surface of the liquid receiving portion 27.
(And the inner cup 25) are configured to fit.
Further, a drain line 28 which also serves as a drain pipe and an exhaust pipe is connected to the bottom surface of the liquid receiving portion 27, and a ring body 29 having a chevron cross section whose upper end approaches the back surface of the wafer W is connected to the peripheral edge portion of the disk 26. It is provided. Although not shown in the drawings, the disk 26 has, for example, a cleaning nozzle for cleaning the back surface of the outer edge of the wafer W, and a drain pipe for discharging the cleaning liquid supplied from the cleaning nozzle and splashed back to the disk 26. Etc. are provided.

Next, the outside of the cup 23 will be described with reference to the plan view shown in FIG. As shown in the drawing, a guide rail 31 extending in the Y direction is provided on the outer side of the outer cup 24 so as to be parallel to one side of the upper side of the outer cup 24, for example. In the state shown in FIG. 2, the first moving mechanism 3 that moves the supply nozzle 4 to one end side of the guide rail 31.
2, second moving mechanisms 33 for moving the cleaning nozzle 40 are respectively located on the other end side, and these moving mechanisms 32,
33 is configured so as to be guided by the guide rail 31 and movable above the wafer W. Further, the first moving mechanism 32 is provided with an elevating mechanism (not shown) for enabling the movement of the supply nozzle 4 in the Z direction. For example, as shown in FIG. 1, the supply nozzle 4 is moved above the outer cup 24. After the movement, the developing solution, which is the processing solution, can be supplied in a state in which the developing solution is lowered inside the outer cup 24 and brought close to the vicinity of the surface of the wafer W.

The positions at which the first moving mechanism 32 and the second moving mechanism 33 are shown in FIG. 2 are the first moving mechanism 32 and the second moving mechanism 33 when not working.
Standby position of each of the supply nozzles 4
Cleaning unit 34 for cleaning a discharge hole described later
And a cleaning unit 35 for cleaning the tip of the discharge portion 40a of the cleaning nozzle 40.

The structure of the supply nozzle 4, which is the main part of the present embodiment, will be described with reference to FIGS. 3 and 4. Reference numeral 41 shown in FIG. 3 indicates the rear end of the first moving mechanism 3 described above.
2 is an arm portion supported by 2, and the front side thereof rotatably suspends both ends of a cylindrical rotating body 5 extending in the X direction via a holding member 42 and a motor 43 forming a drive mechanism of the rotating body 5. It is configured to support lowering. In the hollow portion of the rotating body 5, X is spread over almost the same length as the rotating body 5.
2 is provided with a developing solution supply pipe 44 serving as a processing liquid supply pipe. The rear end of the developing solution supply pipe 44 extends to the outside of the first moving mechanism 32 (not shown) through the inside of the arm portion 41, and is shown in FIG. It is connected to the developer supply source 45.

That is, as shown in FIG. 4, the rotating body 5 and the developing solution supply pipe 44 have a so-called double tube structure, and the axial lengths of both the rotating body 5 and the developing solution supply pipe 44 are large. ,
For example, the width is equal to or slightly wider than the width of the developing solution supply region on the wafer W. The motor 43 described above is configured to rotate only the rotary body 5 forming the outer tube without rotating the developing solution supply pipe 44 forming the inner tube, and the rotation direction thereof is, for example, in FIG.
If the developer is supplied while moving from left to right, the developer is set to be downward, that is, clockwise when viewed from the traveling direction side (right side in FIG. 1).

Further, a large number of supply holes 46 forming openings are formed in the developing solution supply pipe 44 so as to face the lower side (wafer W direction) over the entire area in the X direction.
Has a large number of discharge holes 51 forming discharge ports over the entire X direction.
Are formed in rows, and the rows of the discharge holes 51 are evenly provided, for example, over the entire circumference. Therefore, as shown in FIG. 4, the developing solution flowing in the developing solution supply pipe 44 first collects on the inner surface of the rotating body 5 and is supplied to the wafer W side by a fixed amount from the ejection hole 51 that is closest to the wafer W at that time. It is configured to.

Referring back to FIG. 2 again, the control system in the present embodiment will be described.
Lifting / lowering unit 25, first moving mechanism 72, second moving mechanism 7
4, the motor 43 is configured to operate based on a control signal from the control unit 6, and the developing solution supply unit 4
The control unit 6 can also control the supply of the developing solution in 5 and the control of the supply flow rate of the developing solution in the supply nozzle 4. Therefore, when supplying the developing solution to the wafer W, the control section 6 can freely change, for example, the moving speed of the supply nozzle 4, the rotational speed of the rotating body 5, and the developing solution supply flow rate. Although omitted in FIG. 2,
The motor 43 is configured to receive a control signal from the control unit 6 via the first moving mechanism 32.

Next, the operation of this embodiment will be described. First, the substrate holder 21 is lifted above the cup 23, and the wafer W, which has already been exposed with the resist in the previous step and has been subjected to the exposure process, is transferred from the carrier arm (not shown) to the substrate holder 21.
Is handed over to. Then, when the substrate holder 21 is lowered so that the wafer W comes to the predetermined position shown by the solid line in FIG. 1, the first moving mechanism 32 moves the supply nozzle 4 from above the cleaning unit 34 to above the outer cup 24, and then As shown in FIG. 1, for example, it is lowered to the standby position above the inner cup 25. At this time, since the supply nozzle 4 is set to a height for supplying the developing solution to the surface of the wafer W, the lowermost end of the rotating body 5 is positioned so as to be, for example, 1 mm higher than the surface level of the wafer W.

Then, as shown in FIG. 5, the supply nozzle 4 starts to discharge the developing solution and move to the wafer W side from the lowered position (dotted line in FIG. 5). At this time, the supply nozzle 4 advances in a state in which the rotating body 5 is rotated (here, clockwise) by the action of the motor 43 as described above, and therefore, at the front end P of the wafer W, the surface of the rotating body 5 or The developer adhering to the portion advances to the other end side of the wafer W while pulling up a part of the developer, which is about to drop to the left side in the drawing from the end portion by its own weight, by the surface tension.

Then, for example, the film thickness on the surface of the wafer W is 1.
Since a 2 mm liquid film is formed, the supply nozzle 4 moves with the lower end of the rotating body 5 slightly dipped in the liquid film, and is gradually extended to the rear side where the supply nozzle 4 has moved. Thus, the liquid film is formed. However, in practice, as can be seen from FIG. 4, the supply nozzle 4 rotates the rotating body 5 so that the developing solution is linearly arranged in each row of the ejection holes 51 arranged in the X direction. While supplying to the W surface, at the same time, at the rear side in the traveling direction of the supply nozzle 4, that is, the discharge hole 51 in FIG. 4, for example.
In a and 51b, the developing solution that is stretched from the surface of the liquid film is forcibly separated by the surface tension. By repeating these operations, the lines of the developing solution are connected on the surface of the wafer W, and as a result, the solution is A film is formed.

When the supply nozzle 4 reaches the end of the wafer W, the rotor 5 and the liquid film at the end of the wafer W are slightly connected by surface tension as shown in FIG. 6 (a). This connection is not stretched,
The rotation of the rotator 5 causes it to be immediately separated from the upper side, and thus the supply nozzle 4 advances as it is without causing a large flow (or waviness) in the developing solution on the surface of the wafer W, and as a result, as shown in FIG. As shown, a liquid film is formed on the surface of the wafer W.

Then, after the application of the developing solution is completed, the static development of the wafer W is performed, the supply nozzle 4 is returned to the cleaning unit 34 which is the standby position along with the first moving mechanism 32, and the cleaning unit 35 replaces it. The cleaning nozzle 40 is moved to the wafer W side by the second moving mechanism 33. Then, the discharge unit 40 of the cleaning nozzle 40 is provided above the center of the wafer W.
The substrate holder 21 is positioned so that a is positioned.
The cleaning liquid is supplied from the cleaning nozzle 40 to the central portion of the wafer W, the centrifugal force of the wafer W spreads from the central portion of the wafer W to the peripheral portion, and the developing liquid is washed away. Thereafter, the wafer W is subjected to processes such as spin drying, and the developing process is completed.

As described above, according to the embodiment of the present invention, the supply nozzle 4 is provided with the rotating body 5 in which the rows of the discharge holes 51 linearly arranged are evenly arranged in the circumferential direction, and the developing solution is provided. Since the supply nozzle is moved from one end side to the other end side of the wafer W at the time of supplying the developing solution, and the developing solution is supplied while the rotating body 5 is rotated,
A line of the developing solution is sequentially supplied to the surface along the row of the ejection holes 51, and a liquid film is formed by connecting the lines. Therefore, there is an advantage that flow does not easily occur in the liquid film at the time of supplying the developing solution, and waviness is suppressed, so that the film thickness does not easily change.

Further, by supplying the developing solution while rotating it with the rotating body 5 having the above-mentioned structure, the developing solution which is about to drop downward at the front end portion of the wafer W is also At the end portion on the back side of the wafer W, the developing solution which is drawn from the liquid film by the surface tension can be quickly cut. Therefore, it is possible to prevent the developing solution from leaning back, and even if it occurs, the amount thereof is very small, so that the possibility of flowing or waviness in the liquid film is small.

By the way, the structure of the supply nozzle 4 is not limited to the above-mentioned embodiment, and another embodiment of the supply nozzle 4 will be described below with reference to FIG. FIG. 7A is a vertical cross-sectional view of the rotating body 7 according to the present embodiment. The rotating body 7 is provided at the center and the flow of the developing solution that extends in the direction orthogonal to the advancing direction of the supply nozzle 4 flows. Chamber 71
And a developing solution supply chamber 72 that is a processing solution supply chamber radially provided around the flow-through chamber 71, and a flow path 73 that connects the flow-through chamber 71 and each developer solution supply chamber 72. There is. A hole 74a is formed in a developer supply pipe 74 which is provided in the flow chamber 71 and is connected to a developer supply source (not shown). The developer supplied from the hole 74a is, for example, in the flow path 73. It is configured to go to the side of the developing solution supply chamber 72 via an electromagnetic valve 75 provided in, for example, a control unit (not shown) opens and closes so as to supply the developing solution only to the developing solution supply chamber 72 at the lowest position. Control is performed.

Further, focusing on one developing solution supply chamber 72 and describing the inside thereof, a cavity wider than the flow path 73 is formed in the developing solution supply chamber 72, and the discharge port 70 is formed at the tip.
Are formed. As shown in FIG. 7B, the discharge port 70 is an assembly of a large number of discharge holes 70a arranged in the axial direction of the rotating body (the direction in which the flow chamber 71 extends). By providing the arm 41 in the embodiment and rotating and moving the arm 41 as shown in the drawing, the coating solution is sequentially supplied from the developing solution supply chamber 72 at the lowest position, and the developing solution is applied to the surface of the wafer W. A liquid film can be formed. Note that in FIG. 7B, only one developing solution supply chamber 72 is shown for convenience.

Even in such a structure, since the developing solution is supplied in one row and one row for each of the ejection holes 70a arranged in the axial direction of the rotating body 7, the flow or waviness is unlikely to occur on the surface of the wafer W, and At the end of the wafer W, the developing solution is rapidly and forcibly cut off by the rotation of the rotating body 7, so that the occurrence of back-shifting is suppressed.

The rotating body 5 or the rotating body 7 according to this embodiment may be rotated in the opposite direction, and the liquid treatment is not limited to the developing treatment, and the resist liquid coating treatment at the time of forming the resist pattern. Alternatively, it may be applied to a coating process of a precursor material when forming a silicon oxide film.

Furthermore, in the above-described embodiment, the rotation speed of the rotating body 5 is not changed and the developing solution is always supplied at a constant rotation speed, but the control unit 6 rotates the rotation speed as described above. Since the rotation speed of the body 5 can be controlled, the rotation speed may be changed according to the position of the supply nozzle 4 (rotation body 5), for example. Specifically, for example, the supply of the developing solution from the supply nozzle 4 is started, and the supply nozzle 4 is moved from one end side to the other end side of the wafer W so that the supply nozzle 4 moves the central portion of the wafer W. After exceeding the limit, it is preferable to increase the number of rotations of the rotating body 5.

The reason why such an embodiment is preferable is as follows. That is, since the wafer W has a substantially circular shape, when the supply nozzle 4 reaches the area on the far side from the center of the wafer W, the width of the coated area is narrowed, and at the peripheral edge of the wafer W, the “invention is solved”. As described in “Issues to be solved”, the developer is stretched. However, in the present embodiment, since the number of rotations of the rotating body 5 is increased in this region, from each discharge port 51 in the rotating body 5,
The developing solution is supplied to the surface of the wafer W in finer pieces than before, and the supplied developing solution is quickly extended upward and runs out. Therefore, the reaction that occurs when the liquid runs out becomes small, and it becomes difficult for flow or ripple to occur in the liquid film. Further, the control pattern of the rotation speed is not limited to the above-mentioned one. For example, when the supply nozzle passes the central portion, the rotation speed of the rotating body 5 is increased and the supply nozzle 4 is separated from the other end portion of the wafer W. At this time, the rotation speed may be further increased.

In the above-described embodiments, the substrate used is not limited to the semiconductor wafer, but may be applied to various substrates such as a glass substrate for a liquid crystal display and a reticle substrate for a photomask. It is also possible, but the shape of the supply nozzle 4
When viewed from the front side in the traveling direction of, it is particularly effective that the lateral width of the peripheral edge becomes narrower toward the back side.

Next, a pattern forming device in which the above-described developing device is incorporated in a developing unit will be briefly described with reference to FIG. Reference numeral 81 in the drawing denotes a cassette station, for example, a transfer unit for transferring the wafer W between the mounting portion 82 for mounting the cassette C containing 25 wafers W and the mounted cassette C. And 83 are provided. The housing 8 is provided on the back side of the delivery means 83.
A processing unit S1 surrounded by 4 is connected. A main transport means 85 is provided at the center of the processing section S1,
A liquid processing unit 86, which is a combination of coating and developing units on the right side looking at the back so as to surround this,
Shelf units U1, U2, U3 in which heating / cooling system units and the like are stacked in multiple stages are arranged on the left side, the front side, and the back side, respectively.

The shelf units U1, U2, U3 are constructed by combining various units for performing pretreatment and posttreatment of the liquid treatment unit 86, for example, a reduced pressure drying unit, a heating unit, a cooling unit, etc. Is included. It should be noted that the shelf units U2 and U3 also incorporate a delivery unit including a delivery table for delivering the wafer W. Further, the main transfer means 85 described above is configured to be movable up and down, moved back and forth, and rotatable around a vertical axis, and a wafer is provided between the liquid processing unit 86 and each unit constituting the shelf units U1, U2, U3. W
It is possible to deliver. Processing unit S1
An exposure unit S3 is connected to the back side of the unit via an interface unit S2. The interface unit S2 is, for example, a delivery means 8 configured to be movable up and down, movable left and right, forward and backward, and rotatable around a vertical axis.
7, the wafer W is transferred between the processing section S1 and the exposure unit S3.

[0038]

As described above, according to the present invention, when a developing solution is coated on a substrate by a scanning method using a coating nozzle having a rotating body, the substrate surface is suppressed while suppressing the flow and waviness in the developing solution. It is possible to form a liquid film of the developing solution on.

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of a liquid processing apparatus according to the present invention.

FIG. 2 is a plan view showing an embodiment of a liquid processing apparatus according to the present invention.

FIG. 3 is a vertical cross-sectional view showing the overall structure of a supply nozzle.

FIG. 4 is a vertical cross-sectional view for explaining a rotating body of the supply nozzle and a peripheral portion of a discharge hole thereof.

FIG. 5 is an operation explanatory view showing an operation in the present embodiment.

FIG. 6 is an operation explanatory view showing an operation in the present embodiment.

FIG. 7 is an explanatory diagram showing another embodiment of the liquid processing apparatus according to the present invention.

FIG. 8 is a plan view showing an example of a pattern forming apparatus incorporating the liquid processing apparatus.

FIG. 9 is an explanatory diagram showing an example of a conventional liquid processing apparatus.

FIG. 10 is an explanatory diagram showing a state of a liquid film formed on a substrate by a conventional liquid processing apparatus.

FIG. 11 is an explanatory diagram showing another example of a conventional liquid processing apparatus.

[Explanation of symbols]

W semiconductor wafer 21 substrate holder 23 cups 24 outer cups 25 inner cup 32 First moving mechanism 4 supply nozzles 43 motor 44 Developer Supply Pipe 45 Developer Supply Unit 46 Supply hole 5 rotating body 51 discharge hole 6 control unit 7 rotating body 71 Flow chamber 72 Developer Supply Chamber 73 channel 75 solenoid valve

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) B05D 3/00 G03F 7/30 502 5F046 G03F 7/30 502 B05C 5/00 102 // B05C 5/00 102 H01L 21/30 569C (72) Inventor Kosuke Yoshihara 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcast Center Tokyo Electron Ltd. (72) Inventor Shuji Kyoda 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcast Center Tokyo Electron Ltd. (72) Inventor Hirofumi Takeguchi 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcast Center Tokyo Electron Ltd. F-term (reference) 2H096 AA25 AA27 AA28 GA30 GA31 4D075 AC11 AC30 AC78 DA06 DB11 DC22 DC24 DC27 EA07 EA45 4F035 AA04 CA05 CB03 CB04 CB13 CC01 CD08 CD15 4F041 AA02 AA05 AA06 AB02 BA07 BA13 BA24 BA53 4F042 AA02 AA07 AA10 DF03 DF32 DF34 5F046 LA03 LA04

Claims (9)

[Claims] 1. A substrate holding part for holding the substrate horizontally, and a supply nozzle for moving the substrate held by the substrate holding part from one end side to the other end side to supply the processing liquid to the surface of the substrate. This supply nozzle is provided with a rotating body that rotates about a horizontal axis that is orthogonal to the traveling direction of the supplying nozzle, and that has a length that is approximately the same as or larger than the width of the effective area of the substrate. A liquid treatment characterized in that the liquid treatment is formed over the entire circumference and arranged in the circumferential direction of the rotating body, and has a discharge port for discharging the processing liquid when the rotating body is downward, and a drive mechanism for rotating the rotating body. apparatus. 2. The rotating body is composed of a cylindrical body, and a processing liquid supply pipe is inserted into the rotating body from an end face of the rotating body along the axial direction of the rotating body so as not to rotate when the supply nozzle moves. 2. The liquid processing apparatus according to claim 1, wherein a supply hole for supplying the processing liquid is formed in the cylindrical body on the lower surface side of the processing liquid supply pipe. 3. The liquid processing apparatus according to claim 1, wherein the rotating body is provided with a processing liquid supply chamber divided in the circumferential direction, and each processing liquid supply chamber is formed with a discharge port. 4. The rotating body comprises a processing liquid flow chamber provided in a central portion, and a flow path communicating between the processing liquid supply chamber and the flow chamber.
The liquid processing apparatus according to claim 3, further comprising: 5. The liquid according to claim 1, wherein one discharge port is an assembly of a plurality of minute discharge holes arranged along the axial direction of the rotating body. Processing equipment. 6. The liquid processing apparatus according to claim 1, wherein the drive mechanism rotates the rotating body downward when the supply nozzle is viewed from the traveling direction side. 7. When the substrate is a semiconductor wafer, a control unit that controls the drive mechanism so as to change the number of rotations of the rotating body according to the supply position of the processing liquid in the supply nozzle is provided, and at least the supply nozzle is the substrate. 7. The number of revolutions is increased from the time of being in the central portion to the time of going to the other end side beyond the central portion.
The liquid processing apparatus according to any one of 1. 8. The liquid processing apparatus according to claim 7, wherein when the supply nozzle separates from the other end side of the substrate, the rotating body is rotated at a higher rotational speed than the rotational speed up to that time. 9. A step of horizontally holding a substrate on a substrate holding part, and a step of forming a supply nozzle in which a discharge port of a processing liquid is formed over a length substantially equal to or more than a width of an effective area of the substrate, The step of moving from one end side to the other end side, and when performing this step, the supply nozzle is rotated downward around the horizontal axis of the supply nozzle and directed downward in the discharge ports arranged in the circumferential direction of the supply nozzle. And a step of sequentially discharging the processing liquid onto the substrate from a discharge port.