JP2003139799A - Probe card and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card capable of transmitting a signal between an integrated circuit and an external semiconductor test device in a test of the semiconductor integrated circuit. SOLUTION: This probe card 100 comprises a contact 92, a base 94, a signal transmitting passage 96, an earth conductor part 98 and a hole part 102. The signal transmitting passage 96 is formed on the base 94. The base 94 is made out of a dielectric material or a semiconductor material. The contact 92 is formed on a tip of the signal transmitting passage 96 on one face of the base 94. The contact 92 is mounted on an upper part of the hole part 10 separately from the base 94. The contact 92 has the elasticity in the direction vertical to the surface of the base 94, so that it can be elastically abutted on a connection terminal formed on a tested circuit during the test. This probe card 100 can transmit a signal of high frequency to the integrated circuit having a number of pads at narrow pitches, by making the contact 92 out of a metallic glass material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card for transmitting a signal between an integrated circuit and an external semiconductor test device in an electrical test of a semiconductor integrated circuit,
In particular, the present invention relates to a probe card capable of transmitting a high frequency signal to an integrated circuit having a large number of pads with a narrow pitch.

[0002]

2. Description of the Related Art When manufacturing an integrated circuit, it is essential to perform an electrical characteristic test of the integrated circuit during the manufacturing process. In this test, it is necessary to provide a transmission line for transmitting a test signal between the wafer on which the integrated circuit is manufactured and the external semiconductor test device. The transmission path has a contactor at the tip, and the contactor is brought into contact with a connection terminal on the integrated circuit to supply a test signal generated by an external semiconductor test apparatus to the integrated circuit. In recent years, development of semiconductor devices that operate at high speed has been actively promoted, and accordingly, it is required that the semiconductor test apparatus, the contactor, and the transmission path between the semiconductor tester and the contactor can handle high frequencies. Has been done. Further, in recent years, the densification (high integration) of semiconductor devices is remarkable, and it is necessary to develop a transmission line capable of supplying a test signal to a highly integrated circuit having a large number of pads at a narrow pitch.

FIG. 1 shows the structure of a conventional contact portion 10 which enables transmission of a high-frequency signal between an external semiconductor test device and a circuit under test which is a test target. This contact portion 10
The contactor 12, the coaxial cable 14, and the support fixing portion 16 are provided. The contactor 12 is attached to the tip of the coaxial cable 14, and contacts the connection terminal (for example, pad, solder ball, gold bump, etc.) on the circuit under test during the test. The coaxial cable 14 is connected to an external semiconductor test device (not shown). The support fixing portion 16 supports the coaxial cable 14 and fixes the position of the contactor 12.

Signal transmission between the external semiconductor test device and the circuit under test is performed via the coaxial cable 14. Therefore, when a high frequency signal is transmitted using the contact portion 10, it is possible to reduce the attenuation of the transmission signal to a very small level.

FIG. 2 is a diagram showing a region near the contact 12 of the contact portion 10 shown in FIG.
In FIG. 2, the coaxial cable 14 has a signal line 18a that transmits a signal and a ground line 18b that is grounded. The contactor 12 includes a contactor 12a that contacts the signal line of the circuit under test and contactors 12b and 12c that contact the ground portion of the circuit under test. Contacts 12a, 12
b and 12c form an air coplanar, and impedance matching is maintained up to the vicinity of the tip.

FIG. 3 shows a state in which the contact 12 is brought into contact with the circuit under test. The contact 12a is in contact with the signal line 20a of the circuit under test, and the contacts 12b, 12c are in contact with the ground portions 20b, 20c of the circuit under test. According to the contact portion 10 having the coaxial cable 14, 100 GHz
It becomes possible to transmit signals in the above high frequency band.

[0007]

In the development of integrated circuits in recent years, not only has the speed increased, but the miniaturization and high integration of the circuits have been remarkable. According to the contact portion 10 shown in FIG. 1, the pitch of the contacts 12 is equal to that of the coaxial cable 14.
It is not possible to test a highly integrated circuit having a narrow pitch pad because it is limited by the diameter. In addition, the number of pads formed on a circuit is increasing to several thousands at present with the high integration of the circuit, and it is costly to make the contact portion 10 of FIG. 1 by the number of pads. Not rational.
The operating frequency of the next generation general integrated circuit is 1GH
Although the order of z to several GHz, this contact portion 10 is 1
Signal transmission in a high frequency band of 00 GHz or higher is possible, and at present, signal transmission in an excessive band of 100 GHz or higher is not required.

In addition to the contact portion 10 shown in FIG. 1, there is a probe card having a large number of contacts at a narrow pitch in order to test a circuit having a large number of pads at a narrow pitch. Such a probe card is required to have high speed, high pin count, and narrow pitch. In addition, the pin position accuracy is improved, the scrub function that slides on the pad of the circuit under test, the load to prevent deformation of the probe card and wafer due to load, and the area array compatibility for full-face terminal type circuits Are also required. Further, in the test, in order to avoid waveform distortion, it is necessary to make the characteristic impedance from the input / output terminal of the semiconductor test device to the connection terminal (pad) of the circuit under test constant. Hereinafter, four typical conventional probe pins used in the probe card will be described, and further the defects of each probe pin will be described.

FIG. 4 shows a probe pin manufactured by the most general horizontal needle probe method in the past. This horizontal needle probe system has a diameter of 200-30
Use a metal needle of W, ReW, BeCu, Pd, etc. with a taper tip at 0 μm. According to this method, since the needle tip is as long as about 20 mm, the characteristic impedance changes at this needle tip portion and reflection noise occurs. Therefore, the maximum measurement frequency is as low as about 0.2 GHz. Further, since this probe pin is manufactured by hand, it is difficult to realize area array compatibility, high density, reduction of load, and high accuracy of position in the future. Also, W, R
Since there is a grain boundary in the metal needle formed of eW, BeCu, Pd, etc., when the needle formed of such a material repeatedly contacts the pad of the circuit under test, it is generated by scrubbing the pad. The residue has the disadvantage that it enters the grain boundaries, resulting in an increase in contact resistance.

FIG. 5 shows a probe pin manufactured by the vertical needle probe method. The vertical needle probe method is a method developed to realize area array compatibility and high density, which had been a problem with the horizontal needle probe method, but achieves sufficient area array compatibility and high density. It hasn't arrived yet. Further, compared to the horizontal needle probe system, the probe card has a load of at least 1.5 times or more, and it is not possible to realize the load reduction. Further, it has a drawback that it is difficult to perform a sliding operation due to its structure, and a sufficient scrubbing function cannot be obtained.

FIG. 6 shows a probe pin manufactured by the membrane method. The membrane method is a method developed to realize high speed, high density, and area array compatibility. In the membrane method, metal bumps are formed as probe pins on a wiring board made of a polyimide film. Since the height of the metal bump is as short as several tens of μm, it is possible to form the transmission line immediately before the metal bump, and it is possible to realize high speed. However, according to this method, since a load is applied from the vertical direction, it is difficult to obtain a large scrubbing function. Also, because the polyimide film is used as the substrate,
When performing the high temperature test, the polyimide film expands nonuniformly, which causes a misalignment between the pads of the circuit under test and the metal bumps.

FIG. 7 shows a probe pin manufactured by the photolithography / plating method. The photolithography / plating method can realize high precision, high density, and high pin count. Furthermore, since the transmission line can be formed up to the root of the probe pin, it is possible to achieve high speed. However, it is difficult to support the area array because of its structure.

US Pat. No. 5,613,861 discloses a method of making a probe by utilizing the internal stress gradient of a thin film. MoCr is used as a material for this probe. This method has a problem that the reproducibility is low and it is difficult to manufacture a probe having the same shape because the internal stress is used.

Also, "Flip-Chip Bonding on 6-um Pitch using Thin-Fil" disclosed by Donald L. Smith et al.
m Microspring Technology "((Proceedings of 48th El
ectronic Components and Technology Conf .; Seattle,
Washington (May, 1998): c1998 IEEE) discloses a method of forming a MoCr thin film having an internal stress gradient in the film thickness direction by gradually increasing the pressure during thin film deposition. This method has a problem that the reproducibility of stress control is low and it is difficult to manufacture a probe having the same shape.

Further, "DE disclosed by Soonil Hong et al.
SIGN AND FABRICATION OF A MONOLITHIC HIGH-DENSITY
PROBE CARD FOR HIGH-FREQUENCY ON-WAFER TESTING "(I
EDM89, p.289-292) is a stack of thin films with different stress,
A method of making a probe is disclosed. This method has a problem that it is difficult to obtain uniform characteristics among the probes because a plurality of thin films are formed, and it is difficult to manufacture probes having the same characteristics.

[A] also disclosed by Yanwei Zhang et al.
NEW MEMS WAFER PROBE CARD "(0-7803-3744-1 / 97 IEE
E, p.395-399) discloses a method for making a probe by utilizing a bimorph. Since this method uses a heater, there is a problem that a complicated configuration including wiring for the heater is required.

[Probe Card with Probe Pins Grown by the Vapor-L] disclosed by Shinichiro Asai et al.
iquid-Solid (VLS) Method "(IEEE TRANSACTIONS ON CO
MPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY-P
ART A, VOL. 19, NO.2, JUNE 1996) discloses whisker probes grown vertically on a substrate. Since this probe is as long as 1 to 3 mm, it is difficult to increase the speed and it is difficult to reduce the load.

As described with reference to FIGS. 4-7 and the references cited, there is no probe pin scheme in the prior art that satisfies all target characteristics. Therefore, it is necessary to develop a probe pin method that simultaneously satisfies all of the problems such as high speed, high density, high pin count, area array compatibility, scrubbing function, low load and high position accuracy.

Therefore, it is an object of the present invention to provide a probe card capable of transmitting a high frequency signal of 1 GHz or more to an integrated circuit having a large number of pads at a narrow pitch.

Therefore, it is an object of the present invention to provide a probe card and a method for manufacturing the same which can solve the above problems. This object is achieved by a combination of features described in independent claims of the invention. The dependent claims define further advantageous specific examples of the present invention.

[0021]

In order to solve the above-mentioned problems, according to a first aspect of the present invention, the circuit under test is electrically connected to a plurality of connection terminals provided on the circuit under test. And a probe card for transmitting signals between an external semiconductor test device. This probe card has a supercooled liquid region on one surface of the substrate so as to contact the substrate, the plurality of signal transmission paths formed on the substrate, and the connection terminals provided on the circuit under test. A plurality of contacts formed at the tip of the signal transmission path by an amorphous material (that is, a metallic glass material). According to the first aspect of the present invention, by forming a contactor (fine probe pin) of metallic glass by utilizing a fine processing technique (micromachine technique), an integrated circuit having a large number of pads at a narrow pitch,
It has become possible to provide a probe card capable of transmitting a high frequency signal of 1 GHz or higher. Moreover, since the micromachine technology is used, it is possible to collectively fabricate high-speed, multi-pin probe pins.

In one aspect of the first mode, the contact may be formed apart from the substrate.

In another aspect of the first mode, the contact may have a shape extending in a direction away from the surface of the substrate.

In yet another aspect of the first mode, the contact may have a shape curved in a direction away from the surface of the substrate.

In yet another aspect of the first mode, the contact may have elasticity in a direction perpendicular to the surface of the substrate.

In still another aspect of the first mode, the contactor is arranged in a direction perpendicular to the surface of the substrate so as to contact and slide with the connection terminal provided in the circuit under test. It may have elasticity.

In yet another aspect of the first mode, the plurality of contacts may independently have elasticity in the direction perpendicular to the surface of the substrate.

In yet another aspect of the first mode, the region near the tip of the signal transmission line may be formed of the same amorphous material as the contact.

In yet another aspect of the first mode, the probe card may further include a grounded ground line that is provided in parallel with the signal transmission path and is spaced apart from and parallel to the signal transmission path.

In yet another aspect of the first mode, the probe card may further include a low resistance portion adjacent to the signal transmission path and having a lower electric resistance than the signal transmission path.

In a further aspect of the first mode, the low resistance part may be made of any one of gold, copper, nickel, aluminum, platinum and rhodium.

In still another aspect of the first mode, the contact may have a contact point formed of a contact material at the tip.

In yet another aspect of the first aspect, the contact may be coated with a metallic material.

In still another aspect of the first mode, the probe card further includes a potential supply unit which is provided on a back surface which is a back surface with respect to the one surface of the substrate, and which supplies a predetermined potential. Good.

In still another aspect of the first mode, the potential supply section may be a ground conductor section which is grounded.

In still another aspect of the first mode, the ground conductor portion may be provided in a region other than the position on the back surface facing the position where the contact is formed on the one surface.

In a further aspect of the first mode, the substrate is made of a dielectric material or a semiconductor material,
The signal transmission path may form, together with the substrate and the ground conductor portion, a microstrip line having a constant characteristic impedance.

In a further aspect of the first mode, the probe card is formed of a ground material on the one surface of the substrate and is grounded, and is formed of a dielectric material adjacent to the ground conductor portion. Further provided with a dielectric layer, the signal transmission path is formed adjacent to the dielectric layer,
The signal transmission path may form, together with the ground conductor layer and the dielectric layer, a microstrip line having a constant characteristic impedance.

In yet another aspect of the first mode, the signal transmission path may include a parallel transmission section formed parallel to the surface of the substrate.

In yet another aspect of the first mode, the signal transmission path may have a through transmission section extending in the thickness direction of the substrate.

In yet another aspect of the first mode, the signal transmission path may include an internal transmission portion that extends inside the substrate and in parallel with the surface of the substrate.

In yet another aspect of the first mode, the signal transmission path may have internal transmission sections located at different distances from the surface of the substrate.

In a further aspect of the first mode, the probe card has the contact formed on the one surface of the substrate on the back surface, which is the surface opposite to the one surface, via the signal transmission path. A plurality of contacts formed of an amorphous material having a supercooled liquid zone electrically connected to the child may be further provided.

In still another aspect of the first mode, the contact may be formed in a tapered shape that is tapered toward the tip of the contact.

In yet another aspect of the first aspect, the contact may be formed in a tip-split shape in which the tip of the contact is divided into at least two.

In order to solve the above-mentioned problems, the second aspect of the present invention is to electrically connect to a plurality of connection terminals provided on a circuit under test so that the circuit under test and an external device Provided is a method of forming a contact electrically contacting the connection terminal on a substrate of a probe card that transmits a signal to and from a semiconductor test device. The contact forming method according to the second aspect includes a sacrificial layer forming step of forming a sacrificial layer in a partial region of the substrate, and an amorphous material having a supercooled liquid region on the sacrificial layer and the substrate. An amorphous material layer forming step of forming an amorphous material layer containing a material (that is, a metallic glass material), and the sacrificial layer present between the substrate and a partial region of the amorphous material layer. And a step of forming an amorphous material cantilever for forming an amorphous material cantilever partially having a free portion separated from the substrate, and bending the free portion in a direction away from the substrate to form the contactor. And a step of forming a contact.

In the contactor forming method according to the second aspect of the present invention, an amorphous material layer is formed on the substrate to form an amorphous material layer containing an amorphous material having a supercooled liquid region. And removing a portion of the substrate below the partial region of the amorphous material layer by etching to allow the partial region of the amorphous material layer to be separated from the substrate. The method may include a step of forming a portion and a step of forming a contactor by bending the free portion in a direction away from the substrate to form the contactor.

In one aspect of the second aspect, in the step of forming the amorphous material layer, the amorphous material layer can be formed by sputtering the amorphous material.

In another mode of the second aspect, the contact forming step may include a step of plastically deforming the free portion in a direction away from the substrate.

In still another embodiment of the second mode, the step of forming the contact may include the step of heating the free part.

In still another mode of the second aspect, the contact forming step may include a step of heating the free portion in a state where the free portion exists downward with respect to the substrate in the direction of gravity. .

In still another mode of the second mode, the contact forming step may include a step of irradiating the free portion with infrared rays.

In still another embodiment of the second aspect, the step of forming the contact may include the step of irradiating the free portion with infrared rays from both sides of the substrate.

In still another mode of the second aspect, the contact forming step may include the step of providing a bending adjusting portion at a predetermined position below the surface of the substrate in the direction of gravity.

In still another mode of the second mode, the step of forming the contact may include the step of providing the bending adjusting portion having a higher infrared ray transmittance than the substrate.

In still another mode of the second aspect, the contact forming step may include the step of providing the bending adjusting portion having a parallelism flatness of less than ± 10 μm.

In still another mode of the second mode, the contact forming step may include a step of providing the bending adjusting portion having a parallelism flatness of less than ± 2 μm.

In yet another mode of the second embodiment, the step of forming the contact may include the step of providing a quartz glass substrate as the bending adjusting portion.

In still another mode of the second aspect, the contact forming step may include a step of providing a quartz glass substrate having a positioning mechanism for positioning the contactor at a predetermined position below the surface of the substrate in the gravity direction. Good.

In still another aspect of the second mode, the contact forming step is provided at a predetermined position below a locking portion that restrains the movement of the substrate in the gravity direction and below the surface of the substrate in the gravity direction. And a bend adjustment member having a bend adjustment portion.

In still another mode of the second aspect, in the contactor forming step, the bending amount of the free portion can be adjusted by changing the thickness of the bending adjusting portion.

In yet another mode of the second aspect, the contact forming step may include the step of providing the bending adjusting member having the bending adjusting portion formed of quartz glass.

A third aspect of the present invention is to provide a plurality of pads, and a plurality of contacts formed on the pads with an amorphous material having a supercooled liquid region (that is, a metallic glass material). A semiconductor chip including a child, wherein the contact has a shape extending in a direction away from the surface of the pad.

A fourth aspect of the present invention is a semiconductor device on which a semiconductor chip having a plurality of pads is mounted, the semiconductor device including a plurality of electrode leads and a package encapsulating the semiconductor chip. There is provided a semiconductor device characterized in that the pad and the electrode lead are connected by a contact made of an amorphous material having a supercooled liquid region (that is, a metallic glass material).

A fifth aspect of the present invention is a semiconductor device on which a semiconductor chip having a plurality of pads is mounted, the semiconductor device comprising a plurality of external terminal balls and a package enclosing the semiconductor chip. Of the semiconductor device, wherein the pad and the external terminal ball are electrically connected by a contact made of an amorphous material (that is, a metallic glass material) having a supercooled liquid region. provide.

The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

[0067]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments are not intended to limit the invention according to the scope of claims and are described in the embodiments. Not all of the combinations of features described above are essential to the solution of the invention.

FIG. 8 shows the configuration of a semiconductor test system 30 for electrically testing the circuit manufactured on the wafer under test 70. The semiconductor test system 30 includes a semiconductor test device 60 and a probe card 100. The semiconductor test device 60 includes a test device body 40 and a test head 50.
Have. The test apparatus body 40 includes a pattern generator 42.
And a waveform shaper 44, and the test head 50 includes a signal transmission unit 52 and a measurement unit 54. The probe card 100 has contacts (not shown) that come into contact with the connection terminals on the circuit manufactured on the wafer under test 70. The signal transmitted from the signal transmission unit 52 is transmitted to the wafer under test 70 via the probe card 100, and the signal output from the wafer under test 70 is transmitted to the signal transmission unit 52 via the probe card 100. To be done.

The pattern generator 42 uses the wafer under test 70.
Generating a test signal for testing the integrated circuit manufactured above. The test signal is supplied to the waveform shaper 44, and the waveform thereof is shaped according to the input characteristics of the integrated circuit under test. The waveform-shaped test signal is sent to the signal transmission unit 52, and is supplied from the signal transmission unit 52 to the wafer under test 70 via the probe card 100. Then, the wafer under test 70 outputs an output signal based on the test signal, and the output signal is transmitted via the probe card 100 to the signal transmission unit 5.
2 is supplied. The signal transmission section 52 includes the wafer under test 70.
Is supplied to the measuring unit 54. The measuring section 54 determines the quality of the wafer under test 70 based on the output signal.

FIG. 9 shows an embodiment of the present invention of a signal transmission system for transmitting signals between the signal transmission section 52 and the wafer under test 70 shown in FIG. In FIG.
Although only the probe card 100 is shown between the signal transmitting section 52 and the wafer under test 70, in the signal transmitting system shown in FIG. 9, in addition to the probe card 100, the performance board 72 and the probe card 100 are provided.
An interface 74 for connecting the performance board 72 and the performance board 72 is provided. The wafer under test 70 is fixed by a wafer chuck 76 provided on a movable stage 78. Signals are transmitted between the signal transmission section 52 and the wafer under test 70 via the performance board 72, the interface 74, and the probe card 100.

From the lower surface of the signal transmission section 52, a plurality of contacts 88 are projected to the outside. Performance board 72
Has a plurality of pads 80 on its upper surface and a plurality of pads 82 on its lower surface. The interface 74 is provided with a plurality of pogo pins 90 which are expandable and contractible elastic contacts in the longitudinal direction. The probe card 100 is
The upper surface has a plurality of pads 84, and the lower surface has a plurality of contacts 92 that are probes.

As shown in FIG. 9, in this embodiment, the contact 88 is brought into contact with the pad 80, and both ends of the pogo pin 90 are connected to the pad 82 and the pad 84, respectively.
Have been touched. Further, the contactor 92 of the probe card 100 according to the present invention is the pad 8 on the wafer under test 70.
6 is connected. In the present invention, the contactor 92 is formed of an amorphous material having a supercooled liquid region (hereinafter referred to as “metallic glass material”). This metallic glass is characterized by viscous flow in the supercooled liquid region.
In the present specification, the “supercooled liquid region” refers to the temperature region from the glass transition temperature to the crystallization start temperature.
By electrically connecting the pads to each other through the contacts, signal transmission between the signal transmission section 52 and the wafer under test 70 becomes possible.

In FIG. 9, the performance board 72 and the interface 74 are shown as a part of the configuration of the signal transmission system, but these configurations are not always necessary, and as shown in FIG. The probe card 100 may be directly electrically connected to the signal transmission unit 52.

FIG. 10 is a partial cross-sectional view of the probe card 100 according to the first embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor 98 and the hole 102 are provided.

The signal transmission path 96 is formed on the substrate 94. The substrate 94 is made of a dielectric material or a semiconductor material. The contactor 92 is formed of a metallic glass material on the tip of the signal transmission path 96 on one surface of the substrate 94. By utilizing the fine processing technique of the metallic glass material, the contactor 92 can be formed extremely finely, and further, a plurality of contactors 92 can be simultaneously formed at once. The contactor 92 is provided above the hole 102 and is formed separately from the substrate 94. For example, the contactor 92 may have a shape extending in a direction away from the surface of the substrate 94. In the configuration shown,
The contactor 92 has a shape curved in a direction away from the surface of the substrate 94. Further, the contactor 92 may have a shape that linearly extends at a predetermined angle with respect to the surface of the substrate.

Since the contactor 92 has a shape extending in a direction away from the substrate 94, it has elasticity in a direction perpendicular to the surface of the substrate 94. Therefore, the contactor 92 can elastically contact the connection terminal formed in the circuit under test during the test. The contactor 92 contacts the pad of the circuit under test and slides (scrubs) to dislodge dirt on the connection terminal (pad), and further pierces the oxide film to ensure a sufficiently low contact resistance. Is desirable. Contact 92 according to the present embodiment
Has elasticity in the direction perpendicular to the surface of the substrate 94 so as to come into contact with and slide against the connection terminals provided in the circuit under test.

In order to electrically connect all the contacts 92 to the connection terminals (pads) of the circuit under test with certainty,
It is desirable that each contact 92 slides independently (scrubs). Contact 92 according to the present embodiment
Can independently have elasticity in the direction perpendicular to the surface of the substrate, and can be reliably electrically connected to each connection terminal.

In the embodiment shown in FIG. 10, the grounded conductor portion 98, which is grounded, is provided on the surface on the back side of the surface of the substrate 94 on which the contactor 92 is formed. In the present embodiment, the ground conductor 98 is shown as an example of a potential supply unit that supplies a predetermined potential. That is,
The ground conductor part 98 may be a potential supply part capable of supplying a predetermined offset potential. Ground conductor 98
Can be supplied with ground potential.

The ground conductor portion 98 is preferably made of metal. From the viewpoint of the manufacturing process of the contactor 92,
The ground conductor portion 98 is preferably provided in a region other than the position on the back surface facing the position where the contact is formed on one surface of the substrate 94. That is, the ground conductor 98
Is preferably not provided at a position on the back surface facing the position where the contact 92 is formed on one surface of the substrate 94. Although the manufacturing process will be described in detail later, in order to irradiate the contactor 92 with infrared rays from both sides of the substrate 94, the ground conductor portion 98 made of metal is provided at the position of the back surface facing the one side where the contactor 92 is formed. Is preferably not formed.

The signal transmission path 96 is formed together with the substrate 94 and the ground conductor portion 98 so as to form a microstrip line having a constant characteristic impedance.
The characteristic impedance of this microstrip line is
The contact 92 is determined by the type of the dielectric material forming the substrate 94, the thickness of the substrate 94, and the width of the signal transmission path 96.
Ideally, the impedance matching is maintained up to the root of. Further, from the viewpoint of strength, it is desirable that at least the region near the tip of the signal transmission path 96 is formed of the same metallic glass material as the contactor 92. In the first embodiment, the signal transmission path 96 is formed of a metallic glass material in the range shown in the figure, but in order to reduce the resistance of the signal transmission path 96, most of the signal transmission path 96 is metallic glass. It may be formed of a metal having a resistance lower than that of the material. However, as described above, it is desirable that the region near the tip of the signal transmission path 96 is formed of a metallic glass material together with the contact 92 during the manufacturing process of the contact 92 from the viewpoint of strength.

FIG. 11A shows a part of one side of the probe card 100 on which a plurality of contacts are formed. The plurality of contacts 92 are arranged at the same pitch as the pitch of the connection terminals (pads or the like) on the circuit manufactured on the wafer under test.
The signal transmission path 96 has the same pitch as the contactor 92 at least at the tip. The signal transmission path 96 has a parallel transmission path formed parallel to the surface of the substrate. The parallel transmission lines are formed in parallel with each other. Since the contactor 92 according to the present invention is formed of metallic glass by using a fine processing technique, it can be arranged in accordance with a large number of pads at a narrow pitch on the circuit under test. Further, the contacts 92 can be arranged in accordance with the pads arranged in the area on the circuit under test.

FIG. 11B shows a part of the surface on the back side of the surface on which the contacts are formed. FIG. 11B shows a state in which the ground conductor portion 98 is not provided at the position 99 on the back surface facing the position where the contactor is formed. As described with reference to FIG. 10, it is preferable not to provide the ground conductor portion 98 at the position 99 from the viewpoint of the manufacturing process.

FIG. 12 shows the probe card 100 during the test.
Of the contact 92 and the pad 8 on the wafer under test 70
6 shows a state of contact with 6. As described above, each of the plurality of contacts 92 has elasticity in the direction perpendicular to the surface of the substrate 94. Therefore, the contactor 92 can absorb the height variation of the pad 86 and the height variation of the contactor 92 itself, and can secure the electrical connection with the pad 86. The reliable contact between the contact 92 and the pad 86 enables reliable transmission of a signal in the test.

Further, an oxide film may be formed on the surface of the pad 86, but during the test, the pad 86 and the contact 92 are formed.
And must be securely connected electrically. Therefore, the contactor 92 is pressed by the pad 86, and the pad 86
It is desirable to scrub the surface of. That is, the contact 92 is contacted with the pad 86 so as to scrape the surface thereof to ensure an electrical connection with the pad 86.

FIG. 13 is a partial sectional view of the probe card 100 according to the second embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, and the low resistance portion 104 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

In this probe card 100, a low resistance portion 104 formed of a conductor having an electric resistance lower than that of the signal transmission path 96 is formed adjacent to the signal transmission path 96. Specifically, the low resistance portion 104 is formed above the signal transmission path 96. That is, in the second embodiment, both the low resistance part 104 and the signal transmission line 96 function as a low resistance signal transmission line that transmits a signal. As explained in connection with FIG.
From the viewpoint of strength, it is desirable that at least the region near the tip of the signal transmission path 96 is formed of the same metallic glass material as the contact 92. At this time, in order to reduce the electric resistance of the entire signal transmission line, it is preferable to form the low resistance portion 104 having an electric resistance lower than that of the metallic glass adjacent to the signal transmission line 96. The low resistance part 104 is formed of a metal and is formed of a low resistance material such as gold, copper, nickel, aluminum, platinum, or rhodium. By providing the low resistance portion 104 adjacent to the signal transmission path 96, the current mainly passes through the low resistance portion 104. As a result, the resistance of the entire signal transmission path formed by the signal transmission path 96 and the low resistance portion 104 can be suppressed to a low level, and attenuation of high frequency components can be suppressed.

FIG. 14 is a partial sectional view of a probe card 100 according to the third embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, and the low resistance portion 104 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

Referring to FIG. 13, in probe card 100 shown in FIG. 14, low resistance portion 104 is also adjacent to contactor 92. That is, in this probe card 100, not only the signal transmission path 96 but also the contactor 92 is coated with a metal material.
Therefore, the resistance of the contactor 92 and the signal transmission path can be suppressed low, and the attenuation of high frequency components can be further suppressed.

FIG. 15 is a partial sectional view of a probe card 100 according to the fourth embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, the low resistance portion 104, and the contact portion 105 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

Referring to FIG. 13, in probe card 100 shown in FIG. 15, contact portion 105 is provided at the tip of contactor 92. The contact portion 105 is made of a metal material and may be made of the same metal material as the low resistance portion 104. By providing the contact portion 105 having a low resistance at the tip of the contactor 92, a low contact resistance can be obtained between the connection terminal (pad) 86 of the circuit under test 70 and the contact portion 105.

FIG. 16 is a partial sectional view of a probe card 100 according to the fifth embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, the low resistance portion 104, and the contact portion 105 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

Referring to FIG. 13, in probe card 100 shown in FIG. 16, low resistance portion 104 is formed adjacent to contactor 92, and contact portion 105 is formed.
Is provided at the tip of the contactor 92. Low resistance part 10
4 and the contact portion 105 are each made of a metal material, and may be made of the same metal material. FIG.
The probe card 100 shown in FIG.
It is possible to combine the effects of the probe card shown in both 5 above.

FIG. 17 is a partial sectional view of a probe card 100 according to the sixth embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, and the low resistance portion 104 are provided. The low resistance part 104 is formed adjacent to the signal transmission path 96. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

Referring to FIG. 13, in the probe card 100 shown in FIG. 16, both the signal transmission line 96 and the low resistance portion 104 serve as a signal transmission line for transmitting a signal, as in FIG. Realize the function. Unlike the probe card shown in FIG. 13, in the probe card 100 shown in FIG. 16, the signal transmission path 96 is formed to be short, and a state in which signal transmission mainly through the low resistance portion 104 is possible is explicit. Is shown in. Here, also in the probe card 100 shown in FIG. 13, most of the signal transmission path 96 may be formed of a material having high conductivity (low resistance), as described with reference to FIG. On the street. Sixth
Also in this embodiment, at least a part of the signal transmission path 96 is preferably formed of a metallic glass material so as to fulfill the strength requirement imposed on the contact 92.
As a result, the resistance of the signal transmission path formed by both the signal transmission path 96 and the low resistance portion 104 can be suppressed to a low level, and the attenuation of high frequency components can be suppressed.

FIG. 18 is a partial sectional view of a probe card 100 according to the seventh embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, the low resistance portion 104, and the contact point 107 are provided. 13 is designated by the same reference numeral as in FIG.
Has the same or similar function as the corresponding configuration.

Referring to FIG. 17, in the probe card 100 shown in FIG. 18, both the signal transmission line 96 and the low resistance portion 104 serve as a signal transmission line for transmitting a signal, as in FIG. Realize the function. In the seventh embodiment, a contact point 107 that comes into contact with a connection terminal provided on the circuit under test is provided at the tip of the contactor 92. Contact point 107 is preferably formed of a contact material. “Contact material” refers to a metal having high electrical conductivity, thermal conductivity, low contact resistance, low adhesion and weldability, and excellent corrosion resistance. The contact point 107 directly contacts the connection terminal on the circuit under test, so that stable signal transmission can be performed. Furthermore, by coating the surface of the contactor 92 other than the portion where the contact point 107 is provided with a metal material, it becomes possible to suppress the attenuation of high frequency components.

FIG. 19 is a partial sectional view of the probe card 100 according to the eighth embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the ground conductor portion 98, the hole portion 102, and the low resistance portion 106 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

In FIG. 19, a low resistance portion 106 formed of a conductor having an electric resistance lower than that of the signal transmission path 96 is formed adjacent to the signal transmission path 96. In particular,
The low resistance portion 106 is formed between the substrate 94 and the signal transmission path 96. The signal transmission path 96 is preferably attached directly to at least a part of the substrate 94. As described with reference to FIG. 10, the signal transmission path 96
It is desirable that at least a region near the tip of the same is formed of the same metallic glass material as the contactor 92. Therefore, in order to reduce the electrical resistance of the entire signal transmission line,
It is preferable to form the low resistance portion 106 having an electric resistance lower than that of metallic glass adjacent to the signal transmission path 96. The low resistance portion 106 is formed of metal, preferably pure gold. In addition, as described with reference to FIG.
The low resistance portion 106 may be formed of another low resistance material such as copper, nickel, aluminum, platinum, or rhodium. The low resistance portion 106 is connected to the signal transmission line 96.
Is provided adjacent to the low resistance portion 106.
Will mainly pass through. As a result, the signal transmission path 96
Resistance can be suppressed to a low level, and attenuation of high frequency components can be suppressed. Since the high frequency component of the current flowing through the signal transmission path mainly flows on the surface on the side of the ground conductor portion 98, the low resistance portion 106 is formed below the signal transmission path 96 to facilitate passage of the high frequency component of the current. To be able to do it.

FIG. 20 is a partial sectional view of the probe card 100 according to the ninth embodiment of the present invention. The probe card 100 has a function of electrically connecting to a plurality of connection terminals provided on a circuit under test to perform signal transmission between the circuit under test and an external semiconductor test device.
The probe card 100 includes a contactor 92, a substrate 94,
The signal transmission path 96, the hole 102, the ground conductor layer 108, and the dielectric layer 110 are provided. The configuration indicated by the same reference numeral as in FIG. 10 has the same or similar function as the corresponding configuration in FIG.

In FIG. 20, the grounded conductor layer 108, which is grounded, is formed on one surface of the substrate 94. Dielectric layer 11
0 is formed of a dielectric material adjacent to the ground conductor layer 108. The dielectric layer 110 may be formed of a material different from that of the substrate 94. In the ninth embodiment, the signal transmission path 96 is provided adjacent to the dielectric layer 110.

In the probe card 100 shown in FIG. 10, the signal transmission path 96 is formed together with the substrate 94 and the ground conductor 98 so as to form a microstrip line having a constant characteristic impedance. The characteristic impedance of the microstrip line is determined by the material of the dielectric material forming the substrate 94, the thickness of the substrate 94, and the width of the signal transmission line 96. At this time, the thickness of the substrate 94 is required to be a certain thickness or more and the material may be restricted in view of strength requirements.

In the probe card 100 shown in FIG. 20, the signal transmission line 96 forms, together with the ground conductor layer 108 and the dielectric layer 110, a microstrip line having a constant characteristic impedance. Therefore, the characteristic impedance of the microstrip line is
The thickness and material of the dielectric layer 110 and the signal transmission line 9 are not affected by the thickness and material of the substrate 94, which has a restriction on strength.
Determined by the width of 6. Therefore, by adjusting the thickness and material of the dielectric layer 110, the signal transmission line 96
Can be miniaturized. Therefore, FIG.
In the probe card 100 shown in FIG.
It is possible to arrange the contacts 92 at a narrow pitch while maintaining impedance matching up to the root of 2.

FIG. 21 is a partial plan view of the probe card 100 according to the tenth embodiment of the present invention. The probe card 100 includes a contactor 92, a signal transmission path 96, a hole 102, and a ground line 112. Ground line 11
2 is provided between the adjacent signal transmission paths 96. In FIG. 21, the ground line 112 is provided in parallel with the signal transmission line 96 at a distance. By providing the ground line 112, it is possible to suppress crosstalk between adjacent signal transmission paths 96. Signal transmission line 9
6 can form a coplanar line with the ground line 112 provided in parallel on both sides, and can cope with the transmission of a high frequency signal. At this time, the characteristic impedance depends on the material of the substrate 94, the width of the signal transmission line 96, and the ground line 1.
12 and the gap between the signal transmission line 96 and the ground line 112.

FIG. 22 is a partial plan view of the probe card 100 according to the eleventh embodiment of the present invention. The probe card 100 includes a contactor 92, a signal transmission path 96, a hole 102, and a ground line 112. In this probe card 100, two ground lines 112 are provided between adjacent signal transmission lines 96. Therefore, in this probe card 100, crosstalk can be further suppressed as compared with the tenth embodiment shown in FIG.

FIG. 23 is a partial sectional view of a probe card 100 according to the twelfth embodiment of the present invention. The probe card 100 includes a contactor 92, a substrate 94, a signal transmission path 96, a ground conductor 98, a hole 102, and a ground line 11.
2 and back pad 84. This signal transmission line 9
Reference numeral 6 has a through transmission part formed so as to penetrate the substrate 94 in the thickness direction of the substrate 94. Input and output of signals to and from the contactor 92 is performed via the back surface pad 84. The through transmission part is preferably formed of a highly conductive metal material.

The ground line 112 is provided separately from and parallel to the signal transmission path 96. In the twelfth embodiment, the penetration transmission part of the signal transmission path 96 is formed in the thickness direction of the substrate 94. By providing the ground line 112,
Impedance matching of the through transmission part in the signal transmission path 96 is maintained, and crosstalk between adjacent signal transmission paths 96 is suppressed. In FIG. 23, one ground line 112 corresponds to one signal transmission line 96, but from the viewpoint of suppressing crosstalk, a plurality of ground lines 1 are provided.
12 may correspond. Further, when the contacts 92 are densely formed, one ground line 112 may correspond to the plurality of signal transmission lines 96.

FIG. 24 shows the first embodiment of the present invention shown in FIG.
FIG. 6 is a partial plan view of the probe card 100 according to the second embodiment. In this plan view, the contactor 92, the substrate 94, and the hole 102 are shown. This probe card 1
At 00, the contacts 92 are distributed on the surface of the substrate 94. The probe card 100 has area array compatibility and can be used when testing a circuit under test in which connection terminals (pads) are distributed in a plane (area).

FIG. 25 is a partial sectional view of the probe card 100 according to the thirteenth embodiment of the present invention. The probe card 100 includes contacts 92a and 92b, a substrate 94, and a signal transmission path 96. As shown in the figure, in this probe card 100, contacts are formed on both surfaces of the substrate 94. The contactor 92a is a substrate 94.
The contactor 92b is formed on one side of the substrate according to the pad position of the circuit under test, and is formed on the backside of the substrate 94 in place of the pad 84 (see FIG. 9). Signal transmission line 9
The reference numeral 6 has a through transmission part 97 for electrically connecting the contacts 92a and 92b. As described with reference to FIG. 24, the through transmission part 97 is preferably formed of a highly conductive (low resistance) metallic material. Further, as described above, a part of the parallel transmission part in the signal transmission path 96 extending parallel to the surface of the substrate 94 is preferably formed of a metal material in order to enable high-speed signal transmission. The contactor 92b is made of metallic glass, like the contactor 92a.

By providing the contacts 92b on the back surface of the substrate 94, the probe card 100 has elasticity not only on the surface contacting the circuit under test but also on the back surface thereof. Referring to FIG. 9, the contact 92b provided in place of the pad 84 and the pogo pin 90 are surely contacted, and the interface 74 and the probe card 1 are connected.
Signal transmission between 0 and 00 is ensured. Further, in the thirteenth embodiment, since the contactors 92a and 92b having elasticity are formed on both surfaces of the probe card 100, the contactor 92b can also directly contact the contactor 88 of the signal transmission unit 52. Is.

FIG. 26 is a partial sectional view of the probe card 100 according to the fourteenth embodiment of the present invention. The probe card 100 includes a plurality of contacts 92a and 92b, ground layers 93a and 93b, a substrate 94, and a signal transmission path 96. Similar to the probe card 100 shown in FIG. 25, contacts (92a, 92b) are formed on both surfaces of the substrate 94. The contactor 92a is arranged on one surface of the substrate 94 so as to match the pad position of the circuit under test, and the contactor 92b is disposed on the back surface of the substrate 94 on the pad 84 (see FIG. 9).
(See) is formed instead of. The contacts 92a and 92b are electrically connected via a signal transmission path 96. The signal transmission path 96 has internal transmission portions 95 a to 95 c extending inside the substrate 94 in parallel to the surface of the substrate 94, and further has a through transmission portion extending in the thickness direction of the substrate 94.
The contactor 92b is made of metallic glass, like the contactor 92a. The probe card 10 shown in FIG.
As in the case of 0, by providing the contactors 92b on the back surface of the substrate 94, the probe card 1 according to the fourteenth embodiment
00 has elasticity not only on the surface in contact with the circuit under test but also on the back surface thereof.

The probe card 100 is characterized in that the internal transmission parts 95a to 95c are formed in multiple layers. In FIG. 26, there are two wiring layers inside the substrate 94. The contactor 92a is provided in accordance with the pad position of the circuit under test, and the contactor 92b is the interface 7
4 are provided in accordance with the intervals of the pogo pins 90 (see FIG. 9). The pad spacing of the circuit under test is very narrow, and the spacing of the pogo pins is generally set wider than the pad spacing. Therefore, in the fourteenth embodiment, since the contactor 92a and the contactor 92b are electrically connected to each other, the signal transmission path 96 extends inside the substrate 94 in parallel to the surface of the substrate 94. With 95c. The internal transmission parts 95a to 95c are preferably formed in multiple layers in the substrate 94 in the thickness direction of the substrate 94. In the probe card 100 shown in FIG. 26, the internal transmission units 95a and 95b and the internal transmission unit 95c are provided at different distances from the surface of the substrate 94.
26, the signal transmission path 96 inside the substrate 94
Although it is shown one-dimensionally, it is actually preferable that it is formed two-dimensionally in the wiring layer, that is, it is preferable that the internal transmission portion extends in the XY directions in the wiring layer.

FIG. 27 shows an example of the shape of the tip of the contactor 92. For example, as shown in FIG. 27A, the contactor 92 may have a tapered shape that is tapered toward the tip, and the tip may be formed to be sharp. Further, as shown in FIG. 27B, the contactor 92 may have a tapered shape that is tapered toward the tip, and the tip may be rounded. Also, the contactor 92
As shown in FIG. 27 (c), the tip may have a tip-splitting shape in which the tip is divided into two, and may be formed with a corner. Further, as shown in FIG. 27D, the contactor 92 has a tip-splitting shape in which the tip is divided into two,
It may be rounded and formed.

With reference to FIGS. 28 to 34, a signal between the circuit under test and an external semiconductor test device is electrically connected to a plurality of connection terminals provided on the circuit under test. A method of forming a contactor that comes into contact with the connection terminal on the substrate of the probe card that transmits the data will be described.
This contact forming method is used for the amorphous material layer (metallic glass layer).
Is divided into a first step in which the free end portion is separated from the substrate to form a free portion, and a second step in which the free portion is bent to form a contactor. As will be described in detail below, FIGS. 28 and 29 are views for explaining an example of the first stage of the contactor forming method, and FIGS. 30 to 34 are implementations of the second stage of the contactor forming method. It is a figure for explaining an example.

FIGS. 28 (a)-(f) show a contact according to the invention in which a free portion 128a of a metallic glass layer is formed by forming an amorphous material (metallic glass) cantilever 128 on a substrate 94. It is a section construction drawing showing the section of the structure in the process in the 1st example of the 1st step of the formation method. A first example of forming the free portion 128a will be described below with reference to FIGS. 28 (a) to 28 (f).

First, as shown in FIG. 28A, the SiO ₂ film 120 is formed on the substrate 94 by the low temperature CVD method. At this time, it is desirable to use the substrate 94 that is not deformed significantly by heat and is made of an insulating material. In this embodiment, the substrate 9 made of Si
4 is used.

Then, as shown in FIG. 28 (b),
The SiO ₂ film 120 is partially etched by using a photolithography process to form a SiO ₂ sacrificial layer 120 a on a partial region of the substrate 94. Then, polyimide is applied and cured on the surface of the substrate 94 and on the sacrificial layer 120a.
Subsequently, the cured polyimide layer, the Al layer is deposited,
The vapor-deposited Al layer is replaced with a metallic glass layer 126a to be formed later.
Then, the photolithography process is used to etch and remove it. In this photolithography step, the shape of the metallic glass layer 126a to be formed later is set. Then, using the remaining Al layer as a mask, the polyimide is dry-etched.

After the polyimide is dry-etched, as shown in FIG. 28C, the Al layer is removed by wet etching to expose the polyimide layer 124 which will be the mold of the metallic glass layer 126a to be formed later.

Then, as shown in FIG. 28 (d),
A metallic glass material is sputtered on the sacrificial layer 120a, the substrate 94, and the polyimide layer 124 to form a metallic glass layer 126. In this embodiment, ZrCuAl is used as the metallic glass material.

Then, as shown in FIG. 28E, the polyimide layer 124 is removed by etching.
As a result, on the substrate 94, the metallic glass layer 126a,
The sacrificial layer 120a is left. The sacrificial layer 120a is present between the substrate 94 and a partial region of the metallic glass layer 126a.

FIG. 28 (e ') is a top view of the structure shown in FIG. 28 (e). The contactor forming method according to the present invention can use a fine processing technique for metallic glass to simultaneously form a plurality of fine metallic glass layers 126a at once. In FIG. 28 (e ′), for example,
It is shown that three metallic glass layers 126a are formed on the sacrificial layer 120a and the substrate 94. As described above, the shape of the metallic glass layer 126a is the polyimide layer 1
In the first embodiment, the metallic glass layer 126a has the tapered shape shown in FIG. 27 (a).

Then, as shown in FIG. 28F, the sacrificial layer 120a is removed by etching to form an amorphous material (metallic glass) cantilever 128. By removing the sacrificial layer 120a, the metallic glass cantilever 128 partially has a free portion 128a separated from the substrate 94.

As described above, as shown in FIGS. 28A to 28F, the first embodiment of the first step of the method of forming a contact according to the present invention utilizes the sacrificial layer 120a to form a plurality of fine patterns. A method of forming a simple metallic glass cantilever 128 can be provided. Although the metallic glass layer 126 is formed by sputtering in this embodiment, it is also possible to use other known techniques such as another PVD method such as an electron beam evaporation method, a plating technique, and a CVD method.

FIGS. 29A to 29D show a contact according to the present invention in which a free portion 128a of an amorphous material layer (metallic glass layer) is formed by removing a partial region of the substrate 94 by etching. It is a section construction drawing showing the section of the structure in the process in the 2nd example of the 1st step of a child formation method. A second example of the first stage of forming the free portion 128a will be described below with reference to FIGS. 29 (a) to 29 (d).

As shown in FIG. 29A, a polyimide layer 160 is formed on the substrate 94 by a photolithography process in accordance with the shape of a metallic glass layer to be formed later. In this photolithography step, the shape of the metallic glass layer 162a to be formed later is set.

Then, as shown in FIG. 29B, a metallic glass material is sputtered on the substrate 94 and the polyimide layer 160 to form a metallic glass layer 162. At this time, ZrCuAl is used as the metallic glass material.

Subsequently, as shown in FIG. 29 (c),
The polyimide layer 160 is removed by etching. As a result, the metallic glass layer 162a remains on the substrate 94. Since the contactor forming method according to the present invention utilizes the fine processing technique of metallic glass, a plurality of fine metallic glasses 16 can be used.
The structure of 2a can be simultaneously formed at once.

FIG. 29 (c ') is a top view of the structure shown in FIG. 29 (c). In FIG. 29 (c '), a state in which three metallic glass layers 162a are formed on the substrate 94 is shown as an example. In the second embodiment,
Similar to the first embodiment, the metallic glass layer 126a is formed as shown in FIG.
It has the tapered shape shown in FIG.

Then, as shown in FIG. 29D, a part of the substrate 94 existing below a part of the region of the metallic glass layer 162a is removed by etching to remove the hole 1
02 is formed. As a result, some regions of the metallic glass layer 162a are separated from the substrate 94. Specifically, a part of the substrate 94 existing below the tip of the metallic glass layer 162a is removed by etching to form a free portion 128a separated from the substrate 94.

FIG. 29 (d ') is a top view of the structure shown in FIG. 29 (d). In this top view, one hole 102 is formed for the adjacent metallic glass layer 162a, but in another example, the hole 102 is
It may be formed for each metallic glass layer 162a.

As described above, as shown in FIGS. 29A to 29D, the second embodiment in the first stage of the method for forming a contact according to the present invention exists below the tip of the metallic glass layer 162a. It is possible to provide a method of forming the free portion 128a by etching away a portion of the substrate 94 to be etched. Although the metallic glass layer 162 was formed by sputtering in this example, other PVD methods such as electron beam evaporation, plating techniques, and CV.
It is also possible to use the D method or the like.

30A to 30E show the free portion 128a.
FIG. 8 is a cross-sectional structural view showing a cross section of the structure during the process in the first example of the second step of the contactor forming method according to the present invention, in which is bent to form contactor 92. Below, FIG.
Based on (a) to (e), the first example of the second stage in which the free portion 128a is bent to form the contactor 92 will be described. In this first embodiment, the free portion 128a formed in the first embodiment of the first stage shown in FIG.
To use.

First, as shown in FIG. 30 (a), the substrate 94 is inverted from the state shown in FIG. 28 (f). That is, the substrate 94 is arranged in a state where the free portion 128a exists downward with respect to the substrate 94 in the gravity direction.

Then, as shown in FIG. 30 (b),
The bending adjustment unit 130 is provided at a predetermined position below the surface of the substrate 94 in the direction of gravity. The bending adjusting portion 130 is preferably a substrate having rigidity, and is a quartz glass substrate in this embodiment. By providing the bending adjusting portion 130 at an appropriate position, when the free portion 128a is bent later, the bending amount of the free portion 128a can be adjusted.

In order to reliably position the bending adjusting section 130, a bending adjusting section 130 having a positioning mechanism 132 may be used as shown in FIG. 30 (b '). The positioning mechanism 132 is used to position the bending adjustment unit 130 at a predetermined position below the surface of the substrate 94 by gravity. The positioning mechanism 132 may be a member having a predetermined length in the vertical direction from the surface of the bending adjusting section 130. The length of the positioning mechanism 132 is determined based on a predetermined distance between the surface of the substrate 94 and the surface of the bending adjustment section 130. By bringing the tip of the positioning mechanism 132 into contact with the substrate 94, it becomes possible to easily realize the arrangement of the bending adjustment unit 130 at a predetermined position from the surface of the substrate 94.

The bending adjusting portion 130 is preferably formed of a material having a higher infrared ray transmittance than the substrate 94. Also,
The bending adjustment unit 130 includes the contactor 92 having a uniform bending amount.
Is made of a material with high rigidity to form
It is preferred to have a parallelism flatness of less than 0 μm. Further, the parallelism flatness of the bending adjusting unit 130 is ± 5.
It is preferably smaller than μm, and further preferably smaller than ± 2 μm.

Then, as shown in FIG. 30C, infrared rays are applied to the free portion 128a to heat it. Here, the infrared rays pass through the substrate 94 made of Si and the bending adjusting section 130 made of quartz glass. The bending adjustment section 130 is preferably made of a material that does not significantly deform due to heat when irradiated with infrared rays. Free part 1
In order to heat 28a in a short time, it is preferable to irradiate infrared rays from both sides of the substrate. As described with reference to FIG. 11B, on the back surface of the substrate 94 opposite to the surface on which the metal cantilever 128 is formed, a ground formed of metal is formed in a region facing the position of the free portion 128a. The conductor portion 98 is not provided. Since infrared rays cannot pass through the metal, if the ground conductor 98 is provided on the entire back surface of the substrate 94, it becomes impossible to irradiate the free portion 128a with infrared rays from the back surface of the substrate 94. Therefore, in the embodiment shown in FIG. 11B, the grounding conductor portion 98 is not provided at the position on the back surface facing the position where the free portion 128a is formed, and infrared rays can be emitted from both sides.

Metallic glass is amorphous and has characteristics such as high yield strength, high fracture toughness, corrosion resistance, and high hardness. Further, metallic glass has a characteristic that it exhibits a decrease in viscosity at high temperatures and undergoes plastic deformation. In this embodiment, Zr-based ZrCuAl is used as the metallic glass material, but in another embodiment, another series of metallic glass materials such as Pd-based and Ti-based can be used.

The free portion 128a made of ZrCuAl, in an amorphous state, changes its viscosity according to temperature.
Specifically, the free portion 128a exhibits viscous flow when heated to the supercooled liquid region. Therefore, all free parts 12
By irradiating 8a with infrared rays from both sides of the substrate 94 and heating, all the free portions 128a are plastically deformed as shown in FIG. 30 (d). At this time, the free section 12
8a bends in the direction away from the substrate 94 by the action of gravity.

After the tips of all the free portions 128a come into contact with the bending adjusting portion 130, the irradiation of infrared rays is stopped. Free part 1
Since 28a is formed of a metallic glass material having viscous fluidity in the supercooled liquid region, the residual stress inside the bent free portion 128a is almost zero. Free part 128
Although the temperature of “a” gradually decreases, the residual stress inside the free portion 128a remains almost zero. Therefore, the free part 128
When the temperature of a decreases, the free portion 128a does not deform and maintains the shape when the infrared irradiation is stopped.

After that, as shown in FIG.
The bending adjuster 130 is removed, and the contactor 92 having a desired bending amount is formed.

As described with reference to FIG. 4, W, ReW,
Crystal grain boundaries exist in the metal needle formed of BeCu, Pd, or the like. Such a metal needle has a drawback in that, when repeatedly contacted with a pad of a circuit under test, a residue generated by scrubbing the pad enters a grain boundary to increase contact resistance. In contrast, the metallic glass used in the present invention has no grain boundaries.
Therefore, the contactor 92 made of a metallic glass material
Has very good contact properties compared to conventional metal needles.

According to the embodiment of the present invention described above with reference to FIGS. 28 and 30, first, the metallic glass cantilever 128 is formed from the metallic glass material, and then the free portion 128a of the metallic glass cantilever 128 is bent. This makes it possible to form the contactor 92.

In the embodiment described with reference to FIG. 30, the contact 92 is formed using the free portion 128a shown in FIG. 28. However, the free portion 128 shown in FIG.
It is also possible to bend a by the bending method described in FIG. That is, the free portion 128a shown in FIG.
It is possible to form the contactor 92 by irradiating infrared rays to the plastic and deforming the free portion 128a plastically.
By bending the free portion 128a shown in FIG. 29, for example, the contactor 92 shown in FIG. 10 can be formed.

FIG. 31A shows a modification of the bending adjustment section 130 and the positioning mechanism 132 shown in FIG. In FIG. 31A, the bending adjustment member 131 has a bending adjustment portion 130 and a locking portion 133. Locking part 1
33 suppresses the movement of the substrate 94 in the direction of gravity. As illustrated, the bending adjustment member 131 has a recessed portion provided with a locking portion 133. In this embodiment, the locking portion 133
Is formed by providing a step on the inner side surface of the bending adjustment member 131, but may be formed by providing a protrusion on the inner side surface of the bending adjustment member 131. The inner side surface of the bending adjustment member 131 above the locking portion 133 is
It is formed according to the shape of the substrate 94. Bending adjustment member 13
It is preferable that at least a part of the inner wall of the upper portion of No. 1 contacts the side wall of the substrate 94 to suppress the lateral movement of the substrate 94.

The bottom portion of the bending adjustment member 131 functions as the bending adjustment portion 130 shown in FIG. Therefore, as in FIG. 30, it is desirable that at least the bottom portion of the bending adjustment member 131 (that is, the portion of the bending adjustment portion 130) is formed of a material having a high infrared transmittance. The bending amount of the free portion 128a is determined by the bending adjustment portion 130 and the locking portion 133.
Determined by the distance of. That is, the locking portion 133
Realizes the same function as the positioning mechanism 132 shown in FIG. In order to achieve the strict requirement of parallelism and flatness, the bending adjusting member 131 is preferably made of quartz.

FIG. 31 (b) is a modification of the bending adjustment member 131 shown in FIG. 31 (a). This bending adjustment member 1
The reference numeral 31 has a first locking portion 133, a second locking portion 135, and a bending adjustment portion 130. In this embodiment, the first locking portion 133 and the second locking portion 135 are the bending adjusting member 1.
Although it is formed by providing a step on the inner side surface of 31, the bending adjusting member 131 may be formed by providing a protrusion on the inner side surface. The first locking portion 133 restrains the movement of the substrate 94 in the gravity direction. Also, the bending adjustment unit 1
30 is placed on the second locking portion 135, and the second locking portion 1
35 suppresses the movement of the bending adjustment unit 130 in the direction of gravity. Further, it is preferable that the inner surface of the concave portion of the bending adjustment member 131 between the second locking portion 135 and the first locking portion 133 suppress the lateral movement of the bending adjustment portion 130.

The bending length of the free portion 128a is equal to that of the bending adjusting portion 1.
It is determined by the distance between 30 and the first locking portion 133. Therefore, in the bending adjustment member 131 in this embodiment, the free portion 128a can be bent by a desired amount by changing the thickness of the bending adjustment portion 130. For example, by preparing a plurality of bending adjusting portions 130 having different thicknesses and appropriately changing the bending adjusting portions 130 mounted on the second locking portions 135 according to a desired bending amount,
It is possible to adjust the bending amount of the free portion 128a.

Although a method of bending the free portion 128a by utilizing gravity has been described with reference to FIG. 30, for example,
It is also possible to bend the free portion 128a using a centrifugal force, an electric field, a magnetic field, or the like. It is also possible to bend the free part 128a by forming the free part 128a in a bimorph configuration.

FIG. 32 is a diagram for explaining an embodiment in which the free portion 128a is bent by using an electric field. Free part 128
The electrode portion 152 is provided below a. In order to collectively bend all the free portions 128a formed on the substrate 94, the electrode portion 152 preferably has the size of the entire surface of the substrate 94. Then, a voltage power source is connected to the free portion 128a and the electrode portion 152, and the free portion 128a is set to a negative potential and the electrode portion 152 is set to a positive potential. Free part 128a
May be set to a positive potential and the electrode portion 152 may be set to a negative potential.
By applying an electric field between the free portion 128a and the electrode portion 152, the free portion 128a is bent toward the electrode portion 152. Since the free portion 128a is formed of a metallic glass material having viscous fluidity in the supercooled liquid region, the free portion 128a maintains the bent state even when the voltage power supply is turned off. This example utilizes an electric field to
It is possible to collectively form the contacts.

FIG. 33 is a diagram for explaining an embodiment in which the free portion 128a formed in the bimorph structure is bent. As shown in FIG. 33A, the metallic glass cantilever 128 has piezoelectric plates 154a and 154b. The piezoelectric plates 154a and 154b are configured to expand and contract in the length direction of the metallic glass cantilever 128 when a voltage is applied. From the state shown in FIG. 33A, the piezoelectric plate 154a extends in the direction in which the piezoelectric plate 154a extends.
A voltage is applied to a. At the same time, a voltage is applied to the piezoelectric plate 154b in the direction in which the piezoelectric plate 154b contracts.

The piezoelectric plate 154a is extended and the piezoelectric plate 154
Since b is shortened, as shown in FIG. 33 (b),
The free portion 128a is curved downward. At this time, it is desirable that the free portion 128a be heated. With the free portion 128a curved downward, the heating of the free portion 128a is stopped. The free portion 128a is cooled and solidifies as it is. Then the piezoelectric plates 154a and 1
The application of voltage to 54b is stopped. At that time, the piezoelectric plate 15
4a and 154b try to return to the original state, but since the metallic glass of the free portion 128a is solidified in a curved state, the piezoelectric plates 154a and 154b do not return to their original state, and It stabilizes in the intermediate state between the state and the most curved state.

FIG. 33 (c) shows the contactor 92 stably produced in the intermediate state between the original state and the most curved state. In this embodiment, by forming the free portion 128a to have a bimorph structure, it becomes possible to collectively form the contacts. In FIG. 33, the piezoelectric plate 1
Although 54a and 154b are formed adjacent to each other, in another embodiment, the free portion 12 is sandwiched by the free portion 128a.
Piezoelectric plates 154a and 154b on the upper and lower layers of 8a
May be provided. Further, after the free portion 128a is bent to form the contactor 92, the piezoelectric plates 154a and 154b can be removed by etching, for example.

In FIG. 33, two piezoelectric plates 154a are provided.
The method of bending the free portion 128a by using 154 and 154b has been described, but the free portion 128a is formed by using one piezoelectric plate.
It is also possible to bend.

FIG. 34 is a diagram for explaining an embodiment in which the free portion 128a is bent by using a magnetic field. In this embodiment, the magnetic layer 1 that exhibits magnetism is formed on the surface of the free portion 128a.
55 is formed. The magnet 15 is separated from the magnetic layer 155.
7 is placed. The distance between the magnetic layer 155 and the magnet 157 is
It is determined by the desired bending amount of the free portion 128a. When the free portion 128a is heated to a temperature at which it viscously flows, magnetic force bends the magnetic layer 155 and the free portion 128a toward the magnet 157. At this time, the magnetic layer 155 is preferably thinly formed on the surface of the free portion 128a so as to be easily bent by the magnetic force. The magnetic layer 155 is the magnet 157.
The heating of the free portion 128a is stopped at the point of contact with. After that, the magnetic layer 155 is removed by etching to form the contactor 92 having a predetermined bending amount.

30 to 34, the second stage embodiment of the contact forming method has been described, but the free portion 128a can be bent by another method. For example, it is possible to bend the free portion 128a by heating the free portion 128a to the supercooled liquid region and mechanically pressing it.

FIG. 35 shows that the contact according to the present invention is used.
Semiconductor device 140 for connecting pads and electrode leads
The cut surface of is shown. The semiconductor device 140 includes a semiconductor chip 142, electrode leads 146, and a package 1.
Have 48. The package 148 encloses the semiconductor chip. The semiconductor chip 142 has a plurality of pads 144.
And the contacts 150 are formed on the plurality of pads 144.

Conventionally, the pad 144 and the electrode lead 146 are connected by wire bonding. On the other hand, in the semiconductor device 140 shown in FIG. 35, the pad 144 and the electrode lead 146 can be connected by the contact 150 made of a metallic glass material. The contact 150 corresponds to the contact 92 described with reference to FIGS. 9 to 34, and a detailed description of the contact 150 will be omitted. Since the contactor 150 can be formed by a microfabrication technique, it can be easily formed on the pads 144 having a narrow pitch.

The contact 150 has elasticity in the direction away from the pad 144. Therefore, the contact 150
Contacts the electrode lead 146 so as to be pressed down, and reliable contact between the contact 150 and the electrode lead 146 is realized.

FIG. 36 is a schematic view of the contact according to the present invention.
Semiconductor device 1 for connecting pads and external terminal balls
The cross section of 40 is shown. The semiconductor device 140 has a semiconductor chip 142, external terminal balls 158, and a package 148. The package 148 encloses the semiconductor chip 142. The semiconductor chip 142 has a plurality of pads 144, and the contacts 150 are formed on the plurality of pads 144.

The contact 150 corresponds to the contact 92 described with reference to FIGS. 9 to 34, and detailed description of the contact 150 is omitted. Since the contactor 150 can be formed by a microfabrication technique, it can be easily formed on the pads 144 having a narrow pitch. The contact 150 contacts the pad 156. Pad 156
Are electrically connected to the corresponding external terminal balls 158. The semiconductor chip 142 and the package 148 may be bonded with an adhesive material or may be fixed by injecting a resin. In addition, in FIG.
Although the contactor 150 is formed on the pad 144, the contactor 150 may be formed on the pad 156 so as to contact the pad 144.

As is clear from the above description, according to the present invention, it is possible to provide a probe card having a contact made of metallic glass and a method for manufacturing the same. Although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be added to the above-described embodiments. It is apparent from the scope of the claims that the embodiments added with such changes or improvements are also included in the technical scope of the present invention.

[0162]

According to the present invention, it is possible to provide a probe card capable of transmitting a high frequency signal to an integrated circuit having a large number of pads with a narrow pitch.

[Brief description of drawings]

FIG. 1 shows a configuration of a conventional contact portion 10 that enables transmission of a high-frequency signal between an external semiconductor test device and a circuit under test that is a test target.

FIG. 2 shows a view of a region near a contactor 12 of a contact portion 10 shown in FIG. 1 viewed from a direction of an arrow A.

FIG. 3 shows a state in which a contactor 12 is brought into contact with a circuit under test.

FIG. 4 shows a probe pin manufactured by the most general horizontal needle probe method in the related art.

FIG. 5 shows a probe pin manufactured by the vertical needle probe method.

FIG. 6 shows a probe pin manufactured by a membrane method.

FIG. 7 shows a probe pin manufactured by a photolithography plating method.

FIG. 8 shows a configuration of a semiconductor test system 30 for electrically testing a circuit manufactured on a wafer under test 70.

9 shows an embodiment according to the present invention of a signal transmission system for transmitting signals between the signal transmission section 52 and the wafer under test 70 shown in FIG.

FIG. 10 is a partial cross-sectional view of the probe card 100 according to the first embodiment of the present invention.

FIG. 11 is a probe card 1 according to an embodiment of the present invention.
It is a partial top view of 00.

FIG. 12 shows a state in which the contactor 92 of the probe card 100 and the pad 86 on the wafer under test 70 are in contact with each other during the test.

FIG. 13 is a partial sectional view of a probe card 100 according to a second embodiment of the present invention.

FIG. 14 is a partial sectional view of a probe card 100 according to a third embodiment of the present invention.

FIG. 15 is a partial sectional view of a probe card 100 according to a fourth embodiment of the present invention.

FIG. 16 is a partial sectional view of a probe card 100 according to a fifth embodiment of the present invention.

FIG. 17 is a partial sectional view of a probe card 100 according to a sixth embodiment of the present invention.

FIG. 18 is a partial sectional view of a probe card 100 according to a seventh embodiment of the present invention.

FIG. 19 is a partial sectional view of a probe card 100 according to an eighth embodiment of the present invention.

FIG. 20 is a partial sectional view of a probe card 100 according to a ninth embodiment of the present invention.

FIG. 21 is a partial plan view of a probe card 100 according to a tenth embodiment of the present invention.

FIG. 22 is a partial plan view of a probe card 100 according to an eleventh embodiment of the present invention.

FIG. 23 is a partial sectional view of a probe card 100 according to a twelfth embodiment of the present invention.

FIG. 24 is a partial plan view of the probe card 100 according to the twelfth embodiment of the present invention shown in FIG.

FIG. 25 is a partial sectional view of a probe card 100 according to a thirteenth embodiment of the present invention.

FIG. 26 is a partial sectional view of a probe card 100 according to a fourteenth embodiment of the present invention.

FIG. 27 shows an example of the shape of the tip of the contactor 92.

FIG. 28 is a cross-sectional structural view showing a cross section of the structure in process in the first example of the first step of the contactor forming method according to the present invention.

FIG. 29 is a cross-sectional structural view showing a cross section of the structure in process in the second example of the first step of the contactor forming method according to the present invention.

FIG. 30 is a cross-sectional structural view showing a cross section of the structure in process in the first example of the second step of the contactor forming method according to the present invention.

FIG. 31: Bending adjustment part 130 and positioning mechanism 132
A modified example of is shown.

FIG. 32 is a diagram for explaining an example of bending the free portion 128a using an electric field.

FIG. 33 is a free portion 128 formed in a bimorph configuration.
It is a figure for demonstrating the Example which bends a.

FIG. 34 is a diagram for explaining an example of bending the free portion 128a using a magnetic field.

FIG. 35 shows a cross section of a semiconductor device 140 connecting a pad and an electrode lead using a contactor according to the present invention.

FIG. 36 shows a cross section of a semiconductor device 140 connecting a pad and an external terminal ball using the contact according to the present invention.

[Explanation of symbols]

10 ... Contact part, 12, 12a, 12b, 12c ...
・ Contact, 14 ... Coaxial cable, 16 ... Supporting and fixing part, 18a ... Signal line, 18b ... Ground line,
20a ... Signal line, 20b, 20c ... Grounding part,
30 ... Semiconductor test system, 40 ... Test apparatus main body, 42 ... Pattern generator, 44 ... Waveform shaper, 50 ... Test head, 52 ... Signal transmission section,
54 ... Measuring unit, 60 ... Semiconductor testing device, 70 ...
..Wafer under test, 72 ... Performance board,
74 ... Interface, 76 ... Wafer chuck, 78 ... Movable stage, 80, 82, 84, 86
... Pads, 88 ... Contact elements, 90 ... Pogo pins, 92, 92a, 92b ... Contact elements, 94 ... Substrate, 95a, 95b, 95c ... Internal transmission section, 96 ...
..Signal transmission path, 97 ... Penetration transmission section, 98 ... Ground conductor section, 100 ... Probe card, 102 ...
Hole, 104, 106 ... low resistance part, 105 ... contact part, 107 ... contact point, 108 ... ground conductor layer,
110 ... Dielectric layer, 112 ... Ground line, 120
・ ・ ・ SiO ₂ film, 120a ・ ・ ・ Sacrifice layer, 124 ・ ・ ・ Polyimide layer, 126, 126a ・ ・ ・ Metal glass layer, 1
28 ... Metal glass cantilever, 128a ... Free part, 130 ... Bending adjustment part, 132 ... Positioning mechanism, 140 ... Semiconductor device, 142 ... Semiconductor chip, 144 ... Pad, 146 ... Electrode lead, 148 ... Package, 150 ... Contact, 1
52 ... Electrode part, 154a, 154b ... Piezoelectric plate,
155 ... Magnetic layer, 156 ... Pad, 157 ...
-Magnet, 158 ... External connection ball, 160 ... Polyimide layer, 162, 162a ... Metal glass layer

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Koichi Wada             1-23-1 Asahimachi, Nerima-ku, Tokyo Co., Ltd.             In Advantest (72) Inventor Takehisa Takojima             1-23-1 Asahimachi, Nerima-ku, Tokyo Co., Ltd.             In Advantest (72) Inventor Yasuhiro Maeda             1-23-1 Asahimachi, Nerima-ku, Tokyo Co., Ltd.             In Advantest (72) Akira Shimobe, inventor             2-24-7 Tsukushino, Machida-shi, Tokyo (72) Inventor Seiichi Hata             2-32-3 Narusedai, Machida, Tokyo Poplar Hill             Corp 20-303 F-term (reference) 2G003 AA07 AA10 AB01 AE03 AG03                       AG12                 2G011 AA02 AA16 AB01 AB06 AB09                       AC14 AC32 AC33 AE03 AF04                 4M106 AA01 AA02 BA01 DD03 DD10                       DD15

Claims (45)

[Claims] 1. A probe card which is electrically connected to a plurality of connection terminals provided on a circuit under test to transmit a signal between the circuit under test and an external semiconductor test apparatus. Then, the substrate, the plurality of signal transmission paths formed on the substrate, and the amorphous material having a supercooled liquid region on one surface of the substrate so as to come into contact with the connection terminals provided on the circuit under test. A probe card, comprising: a plurality of contacts formed at the tip of the signal transmission path by a material. 2. The probe card according to claim 1, wherein the contact is formed apart from the substrate. 3. The probe card according to claim 1, wherein the contactor has a shape extending in a direction away from the surface of the substrate. 4. The probe card according to claim 3, wherein the contactor has a shape curved in a direction away from the surface of the substrate. 5. The contact is elastic in a direction perpendicular to the surface of the substrate.
4. The probe card according to any one of 4 to 4. 6. The contact has elasticity in a direction perpendicular to a surface of the substrate so as to contact and slide on the connection terminal provided in the circuit under test. The probe card according to claim 5. 7. The probe card according to claim 5, wherein each of the plurality of contacts independently has elasticity in a direction perpendicular to the surface of the substrate. 8. The probe card according to claim 1, wherein a region near the tip of the signal transmission path is formed of the same amorphous material as the contactor. . 9. The probe card according to claim 1, further comprising a grounded ground line which is provided in parallel with the signal transmission path and is spaced apart from the signal transmission path. 10. The probe card according to claim 1, further comprising a low resistance portion adjacent to the signal transmission path and having a lower electrical resistance than the signal transmission path. 11. The low resistance portion is made of gold, copper, nickel,
The probe card according to claim 10, wherein the probe card is made of any one of aluminum, platinum and rhodium. 12. The contactor has a contact point formed of a contact material at a tip thereof.
11. The probe card according to any one of 1 to 11. 13. The probe card according to claim 1, wherein the contactor is coated with a metal material. 14. The apparatus according to claim 1, further comprising a potential supply unit that is provided on a back surface that is a back surface with respect to the one surface of the substrate, and that supplies a predetermined potential. The described probe card. 15. The probe card according to claim 14, wherein the potential supply section is a grounded conductor section that is grounded. 16. The probe card according to claim 15, wherein the ground conductor portion is provided in an area other than the position on the back surface facing the position where the contact is formed on the one surface. 17. The substrate is formed of a dielectric material or a semiconductor material, and the signal transmission line, together with the substrate and the ground conductor portion, forms a microstrip line having a constant characteristic impedance. The probe card according to claim 15. 18. The signal transmission, further comprising: a ground conductor layer formed on the one surface of the substrate and grounded; and a dielectric layer formed of a dielectric material adjacent to the ground conductor portion. A path is formed adjacent to the dielectric layer, and the signal transmission path, together with the ground conductor layer and the dielectric layer, forms a microstrip line having a constant characteristic impedance. The probe card according to claim 1. 19. The probe card according to claim 1, wherein the signal transmission path has a parallel transmission portion formed parallel to a surface of the substrate. 20. The probe card according to claim 1, wherein the signal transmission path has a through transmission part extending in a thickness direction of the substrate. 21. The probe card according to claim 1, wherein the signal transmission path has an internal transmission portion that extends inside the substrate and in parallel with a surface of the substrate. 22. The probe card according to claim 21, wherein the signal transmission path has internal transmission portions located at different distances from the surface of the substrate. 23. A subcooled liquid region electrically connected to the contact formed on the one surface of the substrate through a signal transmission path on a back surface which is a surface on the back side of the one surface of the substrate. 23. The probe card according to claim 1, further comprising a plurality of contacts formed of an amorphous material having a. 24. The probe card according to claim 1, wherein the contactor is formed in a tapered shape which is tapered toward an end of the contactor. 25. The probe card according to claim 1, wherein the contact is formed in a tip-split shape in which the tip of the contact is divided into at least two. 26. A substrate of a probe card, which is electrically connected to a plurality of connection terminals provided on a circuit under test to transmit a signal between the circuit under test and an external semiconductor test apparatus. A method of forming a contactor in contact with the connection terminal, the method comprising: forming a sacrificial layer in a partial region of the substrate; and supercooling the sacrificial layer and the substrate. An amorphous material layer forming step of forming an amorphous material layer containing an amorphous material having a liquid region; and the sacrificial layer existing between a part of the amorphous material layer and the substrate. And forming an amorphous material cantilever having a free portion that is partly away from the substrate, and forming the amorphous material cantilever; bending the free portion in a direction away from the substrate, Forming contact forming step Contacts forming method characterized. 27. A substrate of a probe card, which is electrically connected to a plurality of connection terminals provided on a circuit under test to transmit signals between the circuit under test and an external semiconductor test device. A method of forming a contactor in contact with the connection terminal, the method comprising forming an amorphous material layer containing an amorphous material having a supercooled liquid region on the substrate. A step of etching away a portion of the substrate below a portion of the amorphous material layer to remove a portion of the amorphous material layer separated from the substrate. A contactor forming method, comprising: forming a contact portion; and forming a contactor by bending the free portion in a direction away from the substrate. 28. The amorphous material layer forming step, wherein the amorphous material layer is formed by sputtering the amorphous material.
The method for forming a contactor according to 1. 29. The contactor forming method according to claim 26, wherein the contactor forming step includes a step of plastically deforming the free portion in a direction away from the substrate. 30. The step of forming the contact includes the step of heating the free portion.
7. The method for forming a contactor according to any one of 7. 31. The method according to claim 30, wherein the contact forming step includes a step of heating the free portion in a state where the free portion exists downward with respect to the substrate in a gravity direction. Contact forming method. 32. The contact forming method according to claim 31, wherein the contact forming step includes a step of irradiating the free portion with infrared rays. 33. The contact forming method according to claim 32, wherein the contact forming step includes a step of irradiating the free portion with infrared rays from both surfaces of the substrate. 34. The contact according to claim 26, wherein the step of forming the contact includes the step of providing a bending adjusting portion at a predetermined position below the surface of the substrate in the direction of gravity. Child formation method. 35. The method of forming a contact according to claim 34, wherein the step of forming the contact includes the step of providing the bending adjusting portion having a higher infrared transmittance than the substrate. 36. The contactor forming method according to claim 35, wherein the contactor forming step includes a step of providing the bending adjusting portion having a parallelism flatness of less than ± 10 μm. 37. The method of forming a contactor according to claim 36, wherein the step of forming the contactor includes the step of providing the bending adjusting portion having a parallelism flatness of less than ± 2 μm. 38. The contactor forming method according to claim 34, wherein the contactor forming step includes the step of providing a quartz glass substrate as the bending adjusting portion. 39. The contact forming step includes the step of providing a quartz glass substrate having a positioning mechanism for positioning the contactor at the predetermined position below the surface of the substrate in the direction of gravity. Method of forming contacts. 40. The bending step, wherein the contact forming step includes a locking portion for restraining the movement of the substrate in the gravity direction, and a bending adjusting portion provided at a predetermined position below the surface of the substrate in the gravity direction. 34. The method of forming a contactor according to claim 26, further comprising the step of providing an adjusting member. 41. The contact forming method according to claim 40, wherein in the contact forming step, the bending amount of the free portion is adjusted by changing the thickness of the bending adjusting portion. 42. The contact forming step includes the step of providing the bending adjustment member having the bending adjustment portion formed of quartz glass.
1. The method for forming a contactor according to 1. 43. A semiconductor chip comprising: a plurality of pads; and a plurality of contacts formed on the plurality of pads by an amorphous material having a supercooled liquid region, wherein the contacts are A semiconductor chip having a shape extending in a direction away from the surface of the pad. 44. A semiconductor device mounted with a semiconductor chip having a plurality of pads, comprising a plurality of electrode leads and a package enclosing the semiconductor chip, wherein the pads of the semiconductor chip and the electrode leads are:
A semiconductor device, which is connected by a contact made of an amorphous material having a supercooled liquid region. 45. A semiconductor device having a semiconductor chip having a plurality of pads mounted thereon, comprising: a plurality of external terminal balls; and a package enclosing the semiconductor chip, wherein the pads of the semiconductor chip and the external terminal balls are provided. Are electrically connected by a contact made of an amorphous material having a supercooled liquid region.