JP2003133527A - Magnetic memory, writing method and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a low power-consumption magnetic random access memory which makes TMR elements easy to invert their magnetization directions in a memory layer, thereby reducing current consumption required for writing. SOLUTION: A nonvolatile magnetic memory 1 having a TMR elements 13 composed of a ferromagnetic magnetization fixed layer 302, a memory layer 304 and a tunnel insulation layer 303 inserted between the layers 302, 304 stores information, utilizing the effect that the resistance value of the element changes depending on whether spinning directions are parallel or antiparallel in the ferromagnetic material. At least a region facing the TMR elements 13 on at least one of a bit line 12 and a write word line 11 mutually crossing at two levels between which the TMR elements 13 locate is made of high-melting point/high resistance metal.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic memory device,
Regarding the writing method and the manufacturing method thereof, in detail, a nonvolatile magnetic memory that records information by utilizing the fact that the resistance value changes depending on whether the spin directions of the ferromagnetic bodies forming the tunnel magnetoresistive element are parallel or antiparallel The present invention relates to a device, a writing method thereof, and a manufacturing method thereof.

[0002]

2. Description of the Related Art With the dramatic spread of information communication equipment, especially small personal equipment such as portable terminals, the elements such as memory elements and logic elements are highly integrated, high speed and low power consumption. Higher performance is required such as electric power. In particular, non-volatile memory is considered to be an essential element in the ubiquitous age.

For example, even if the power supply is exhausted or a trouble occurs, or if the server and the network are disconnected due to some trouble, the non-volatile memory can protect important personal information. And high density of non-volatile memory,
Increasing capacity is becoming more and more important as a technology for replacing hard disks and optical disks, which are essentially impossible to miniaturize due to the presence of moving parts.

Also, although recent portable devices are designed to suppress power consumption as much as possible by putting unnecessary circuit blocks in a standby state, a non-volatile memory that can serve both as a high-speed network memory and a large-capacity storage memory. If the above can be realized, waste of power consumption and memory can be eliminated. Also, a so-called instant-on function, which can be instantly started when the power is turned on, will be possible if a high-speed, large-capacity nonvolatile memory can be realized.

As the nonvolatile memory, a flash memory using a semiconductor or an FRAM (Ferr) using a ferroelectric substance is used.
o electric Random Access Memory). However, the flash memory has a disadvantage that it is slow because the writing speed is on the order of μ seconds. On the other hand, F
In the RAM, the number of rewritable times is 10 ¹² to 10 ¹⁴
It has been pointed out that the durability is low to completely replace with static random access memory or dynamic random access memory. Further, it has been pointed out that it is difficult to finely process the ferroelectric capacitor.

As a non-volatile memory which does not have these drawbacks, for example, “Wang et al., IEEE
Trans. Magn. 33 (1997) p4498 ”, which is a magnetic memory called MRAM (Magnetic Random Access Memory).
Toresistance) is getting more and more attention due to the improvement of material properties.

Since the MRAM has a simple structure, high integration can be easily achieved, and the number of times of rewriting is predicted to be large because recording is performed by rotation of a magnetic moment. The access time is also expected to be very high, and it is already possible to operate at 100 MHz. R. Scheuerlein et al, ISSCC Digest of Papers (Fe
b.2000) reported in p128-129. In addition, TMR (T
Now that high output can be obtained due to the unnel Magnetic Resistance) effect, it has been greatly improved.

As described above, although the MRAM has an advantage that it can be easily speeded up and highly integrated, the writing is performed by the TM.
Current is applied to the bit line and write word line provided close to the R element, and the generated magnetic field is used. TM
The reversal magnetic field of the recording layer (memory layer) of the R element needs to be 10 Oe to 200 Oe, depending on the material, and the current at this time is several tens mA. This leads to an increase in current consumption, which is a major issue for reducing the power consumption of mobile devices. Further, in terms of high integration, the bit line and the write word line are required to have a size close to the minimum line width determined by the lithography technique. Assuming bit line width /
The word line width is 0.6 μm, and the wiring film thickness is 500 n.
m is 3 MA / cm ² , and even when copper wiring is used (practical current density: 0.5 MA / cm ² ), the life for electromigration becomes a major issue. With further miniaturization, the switching field of the ferromagnet increases,
Since the wiring dimension must be reduced, this wiring reliability problem becomes more serious.

[0009]

However, miniaturization is required to manufacture a laminated body in which ferromagnetic bodies / semiconductors / ferromagnetic bodies are laminated. Increase, and the required write current increases, which raises problems of increased power consumption and wiring reliability. Further, although it consumes less power, it has a problem that the number of bits per unit area is reduced. The present invention solves the problems described above, and provides a magnetic memory device having a small occupied area and low power consumption, a writing method thereof, and a manufacturing method thereof.

[0010]

SUMMARY OF THE INVENTION The present invention is a magnetic memory device, a writing method thereof and a manufacturing method thereof, which have been made to solve the above problems.

The magnetic memory device of the present invention has a tunnel magnetoresistive element in which a tunnel insulating layer is sandwiched by ferromagnetic materials, and the resistance value changes depending on whether the spin directions of the ferromagnetic materials are parallel or antiparallel. In a non-volatile magnetic memory device for storing information by utilizing at least the tunnel in at least one of a bit line and a write word line arranged to intersect three-dimensionally with the tunnel magnetoresistive element in between. The portion facing the magnetoresistive element is formed of a high melting point / high resistance metal.

In the above magnetic memory device, at least a portion of at least one of the bit line and the write word line arranged to intersect three-dimensionally with the tunnel magnetoresistive element in between, facing at least the tunnel magnetoresistive element, Since it is made of high melting point and high resistance metal,
When an electric current is applied, the part formed of the high melting point and high resistance metal causes Joule heat generation and heats the surrounding area. Therefore, since the tunnel magnetoresistive element is also heated, the switching field H _SW in the hard axis direction can be lowered.

A first magnetic memory device writing method according to the present invention has a tunnel magnetoresistive element in which a tunnel insulating layer is sandwiched by ferromagnetic materials, and the spin directions of the ferromagnetic materials are parallel or antiparallel. In a writing method of a non-volatile magnetic memory device which stores information by utilizing a change in resistance value due to, the tunnel magnetoresistive element itself is heated by heating at least a part of the periphery of the tunnel magnetoresistive element. Writing is performed by increasing the temperature and decreasing the reversal magnetization.

In the first magnetic memory device writing method, at least a part of the periphery of the tunnel magnetoresistive element is heated to raise the temperature of the tunnel magnetoresistive element itself and reduce the reversal magnetization to perform the writing. Since the reversal magnetic field H _SW in the hard axis direction can be lowered by carrying out the writing, writing becomes easy.

A second magnetic memory device writing method according to the present invention has a tunnel magnetoresistive element in which a tunnel insulating layer is sandwiched by ferromagnetic materials, and the spin directions of the ferromagnetic materials are parallel or antiparallel. In the writing method of the non-volatile magnetic memory device that stores information by utilizing the change in resistance value, the tunneling magnetoresistive element itself is heated to lower the magnetization reversal magnetic field to perform writing.

In the second method for writing to the magnetic memory device, the tunnel magnetic resistance element itself is heated to lower the magnetization reversal magnetic field to perform the writing. Therefore, the reversal magnetic field H _SW in the hard axis direction is applied. Since it can be lowered, writing becomes easy.

A method of manufacturing a magnetic memory device according to the present invention has a tunnel magnetoresistive element in which a tunnel insulating layer is sandwiched by ferromagnetic materials, and the resistance value varies depending on whether spin directions of the ferromagnetic materials are parallel or antiparallel. In a method of manufacturing a non-volatile magnetic memory device that stores information by utilizing change, at least a part of a bit line and a write word line formed so as to sandwich the tunnel magnetoresistive element and intersect three-dimensionally. , High melting point, high resistance metal.

In the method of manufacturing the magnetic memory device described above,
Formed so as to sandwich the flannel magnetoresistive element and intersect three-dimensionally
At least one of the selected bit line and write word line
Part is made of high melting point and high resistance metal,
Part made of high melting point and high resistance metal when flowing
Minutes generate Joule heat and heat the surrounding area. That
Therefore, the tunnel magnetoresistive element is also heated, and
Reversing magnetic field H in the hard axis direction _SWMagnetic memo that can lower
The device is formed.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a general MRAM (Magnet
ic Random Access Memory) will be described with reference to a schematic perspective view showing a simplified main part of FIG. In FIG. 2, since the illustration is simplified, the illustration of the read circuit portion is omitted.

As shown in FIG. 2, write word lines 11 (111, 1) which include nine memory cells and intersect each other.
12, 113) and the bit line 12 (121, 122,
123). Magnetoresistive effect (TMR) elements 13 (131 to 139) are arranged in the intersection regions of the write word lines 11 and the bit lines 12. For writing to the TMR element 13, a current flows through the bit line 12 and the write word line 11, and a synthetic magnetic field generated from the current causes the storage layer 304 of the TMR element 13 formed in the intersection region between the bit line 12 and the write word line 11. The magnetization direction of the magnetization fixed layer 302 (see FIG.
Refer to) parallel or anti-parallel.

The asteroid curve shown in FIG. 3 shows the reversal threshold value of the magnetization direction of the storage layer due to the applied magnetic field H _{EA in} the easy axis direction and magnetic field H _{HA in the} hard axis direction. When a synthetic magnetic field vector corresponding to the outside of the asteroid curve is generated, magnetic field reversal occurs. The resultant magnetic field vector inside the asteroid curve does not invert the cell from one of its current bistable states. In addition, since the magnetic field generated by the word line or the bit line alone is applied to cells other than the intersection of the word line and the bit line that are passing current, when the magnitude of these is greater than or equal to the one-way reversal magnetic field H _K. Since the magnetization directions of the cells other than the intersections are also inverted, the selected cell can be selectively written only when the combined magnetic field is in the shaded portion 401.

As described above, in the MRAM array, the memory cells are arranged at the intersections of the grids composed of the bit lines and the write word lines. In the case of an MRAM, it is common to use write word lines and bit lines to utilize the asteroid magnetization reversal characteristic and selectively write to individual memory cells.

The combined magnetization in a single storage area is the magnetic field H _EA and the hard axis magnetic field H _EA applied to it.
Determined by vector composition with _HA . The current flowing through the bit line applies a magnetic field (H _EA ) in the easy axis direction to the cell,
A current flowing through the write word line applies a magnetic field (H _HA ) in the hard axis direction to the cell.

Next, the MRAM described with reference to FIG.
The principle circuit of 1 will be described with reference to the circuit diagram of FIG.

As shown in FIG. 4, the MRAM circuit includes six memory cells, and the write word lines 11 (111, 112) and the bit lines 12 (121, 122) corresponding to FIG. 2 intersect each other. , 123). In the intersection area of the write line word line 11 and the bit line 12, the TMR element 13 (131, 1;
32, 134, 135, 137, and 138 are arranged, and element selection is performed at the time of reading. The field effect transistors 141, 142, and 14 correspond to each memory element.
4, 145, 147 and 148 are connected. Further, a sense line 151 is connected to the field effect transistors 141, 144, 147, and the field effect transistor 142,
A sense line 152 is connected to 145 and 148.

The sense line 151 is a sense amplifier 153.
, And the sense line 152 is connected to the sense amplifier 154 to detect the information stored in each element. Bidirectional write word line current drive circuits 161 and 162 are connected to both ends of the write word line 111,
Bidirectional write word line current drive circuits 163 and 164 are connected to both ends of the write word line 112. Further, a bit line current drive circuit 171 is connected to one end of the bit line 121, a bit line current drive circuit 172 is connected to one end of the bit line 122, and a bit line current drive circuit 173 is connected to one end of the bit line 123. Has been done.

Next, the basic structure of the magnetic memory device will be described below. First, a tunnel magnetoresistive element (hereinafter referred to as a TMR element) which will be a storage element of a memory cell will be described with reference to the perspective view of FIG.

As shown in FIG. 5, the TMR element 13 basically has a fixed magnetization and has a magnetization fixed layer 302 made of a ferromagnetic material and a magnetization that rotates relatively easily. The storage layer 304 including the body and the tunnel insulating layer 3
03 is sandwiched between them.

In the example shown in FIG. 5, a base conductive layer 312 is formed on a support substrate 311, and an antiferromagnetic material layer 3 is formed thereon.
05 is formed. Further, the magnetization fixed layer 30
2. The tunnel insulating layer 303 and the storage layer 304 are sequentially stacked. The magnetization pinned layer 302 has a first magnetization pinned layer 306 and a second magnetization pinned layer 308, and the magnetic layer has a repulsive strength between the first and second magnetization pinned layers 306 and 308. A conductor layer 307 is arranged so as to be magnetically coupled.

The storage layer 304 and the first magnetization fixed layers 306 and 308 are made of a ferromagnetic material such as nickel, iron or cobalt, or an alloy composed of at least two of nickel, iron and cobalt. Consists of.

The conductor layer 307 is made of, for example, ruthenium, copper, chromium, gold, silver or the like.

The first magnetization fixed layer 306 is formed in contact with the antiferromagnetic layer 305, and the first magnetization fixed layer 30 is formed by the exchange interaction acting between these layers.
No. 6 has strong unidirectional magnetic anisotropy.

The antiferromagnetic material layer 305 is made of, for example, iron manganese alloy, nickel manganese alloy, platinum manganese alloy, iridium manganese alloy, rhodium manganese alloy,
One of cobalt oxide and nickel oxide can be used.

The tunnel insulating layer 303 is made of, for example, aluminum oxide, magnesium oxide, silicon oxide, aluminum nitride, magnesium nitride, silicon nitride, aluminum oxynitride, magnesium oxynitride or silicon oxynitride.

The tunnel insulating layer 303 has a function of cutting magnetic coupling between the storage layer 304 and the magnetization fixed layer 302 and having a function of passing a tunnel current. These magnetic film and conductor film are mainly formed by a sputtering method. The tunnel insulating layer can be obtained by oxidizing, nitriding, or oxynitriding a metal film formed by a sputtering method.

Further, a top coat film 313 is formed on the uppermost layer. This top coat film 313 is TMR
It has functions of preventing mutual diffusion between the element 13 and a wiring connecting the other TMR element 13, reducing contact resistance, and preventing oxidation of the memory layer 304. Usually, it is formed of a material such as tantalum nitride, tantalum, titanium nitride or the like. The underlying conductive layer 312 is used for connection with the switching element connected in series with the TMR element, and can also serve as the antiferromagnetic material layer 305.

In the TMR element 13 having the above structure, the tunnel current change due to the magnetoresistive effect is detected and the information is read out. The effect is that the relative magnetization between the memory layer 304 and the first and second magnetization fixed layers 306 and 308. It depends on the direction.

Next, one embodiment of the magnetic memory device of the present invention will be described as an example with reference to the schematic sectional view of FIG. 1 showing the sectional structure of a single cell of the MRAM corresponding to FIGS. explain. Note that (2) of FIG. 1 shows a cross section taken along the line AA of (1) of FIG.

As shown in FIG. 1, a semiconductor substrate (for example, p
A p-type well region 22 is formed on the surface side of the (type semiconductor substrate) 21. An element isolation region 23 for isolating a transistor formation region is formed in the p-type well region 22 by so-called STI (Shallow Trench Isolation). A gate insulating film 25 is formed on the p-type well region 22.
A gate electrode (word line) 26 is formed through the gate electrode 26, and diffusion layer regions (for example, N ⁺ diffusion layer regions) 27 and 28 are formed in the p-type well region 22 on both sides of the gate electrode 26. Is configured.

The field effect transistor 24 functions as a switching element for reading. This is n
In addition to the p-type or p-type field effect transistor, various switching elements such as a diode and a bipolar transistor can be used.

A first insulating film 41 is formed so as to cover the field effect transistor 24. Contacts 29 and 30 connected to the diffusion layer regions 27 and 28 are formed in the first insulating film 41. Further, the sense line 15 and the first wiring 31 connected to the contacts 29 and 30 are formed on the first insulating film 41.

A second insulating film 42 is formed on the first insulating film 41 to cover the sense line 15, the first wiring 31 and the like. A contact 33 connected to the first wiring 1 is formed on the second insulating film 42. Further, the second wiring 35 and the write word line 11 are formed on the second insulating film 42.

A third insulating film 43 is formed on the second insulating film 42 to cover the write word line 11, the second wiring 35 and the like. A contact 37 connected to the second wiring 35 is formed on the third insulating film 43. Further, on the third insulating film 43, a connection layer connecting from above the write word line 11 to the upper end of the contact 37 is formed by the antiferromagnetic material layer 305.

Further, on the antiferromagnetic layer 305, above the write word line 11, the information storage element 13 is formed.
Are formed. This information storage element 13 is the same as that shown in FIG.
As described above, on the antiferromagnetic material layer 305, the first magnetization fixed layer 306 and the conductor layer 307 and the second magnetization fixed layer 308 in which the magnetic layer is antiferromagnetically coupled are sequentially formed. Magnetization pinned layer 302 and tunnel insulating layer 30 which are laminated
3, a memory layer 304, and a cap layer 313 are sequentially stacked. As the material forming the TMR element 13, the material described with reference to FIG. 5 is used.

On the third insulating film 43, a fourth insulating film 44 covering the antiferromagnetic layer 305, the TMR element 13 and the like.
Are formed. The surface of the fourth insulating film 44 is flattened so that the uppermost layer of the TMR element 13 is exposed. The TMR element 13 is formed on the fourth insulating film 44.
Connected to the upper surface of the write word line 11
And the bit line 12 that three-dimensionally intersects (for example, is orthogonal) with the TMR element 13 in between.

In the magnetic memory device 1, the portion of the write word line 11 located below the TMR element 13 is formed of a high melting point / high resistance metal. Portions of the write word line 11 other than those made of high melting point / high resistance metal are made of, for example, aluminum, aluminum alloy, copper or copper alloy.
Alternatively, a part of the bit line 12 connected to the TMR element 13 and its vicinity (for example, within 100 nm)
Is made of a high melting point and high resistance metal. Parts of the bit line 12 other than those made of high melting point / high resistance metal are made of, for example, aluminum, aluminum alloy,
It is made of copper or copper alloy. Alternatively, it is possible to use both the write word line 11 and the bit line 12 having the above configuration.

Tungsten can be used as the high melting point / high resistance metal. In addition to tungsten, an alloy consisting of one or more of iridium, osmium, chromium, zirconium, tantalum, titanium, thorium, vanadium, molybdenum, rhodium, nickel and ruthenium, which are high melting point and high resistance metals. It is also possible to use.

In the magnetic memory device 1 having the above structure, the portion of the write word line 11 located below the TMR element 13 is made of a high melting point / high resistance metal. When an electric current is applied, Joule heat is generated in the portion formed of the high melting point and high resistance metal, and the surrounding area is heated. Therefore, TM
Since the R element 13 is also heated, the reversal magnetic field H _SW in the hard axis direction can be lowered. In addition, the literature (RHKoch e
t al., Phys. Rev. Lett. 84 (2000) p. 5419, JZSun et a
l., Joint Magnetism and Magnetic Material 8 (200
It is disclosed in 1)) that "the magnetization reversal can lower the reversal magnetic field H _{SW in the} direction of the hard axis by increasing the temperature to assist", and this document describes the writing of the magnetic memory device of the present invention. There is no description or suggestion of forming at least a part of the word line or the bit line from a refractory metal having a high melting point which easily causes Joule heat generation.

On the other hand, at least a portion of the bit line 12 located above the TMR element 13 has a high melting point.
In the structure formed of the high resistance metal, when an electric current is applied to the bit line 12, the part formed of the high melting point / high resistance metal causes Joule heat generation and heats the surrounding area. Therefore, since the TMR element 13 is also heated, the reversal magnetic field H _SW in the hard axis direction can be lowered. In this configuration, since the storage layer 304 is easily heated, the reversal magnetic field H _SW in the hard axis direction can be efficiently reduced.

Further, both the write word line 11 having the structure formed of the high melting point and high resistance metal and the bit line 12 having the structure formed of the high melting point and high resistance metal are formed. In such a magnetic memory device, the TMR element 13 can be heated more easily, so that the reversal magnetic field H _SW in the hard axis direction can be lowered more efficiently.

Next, an embodiment of the writing method of the first magnetic memory device of the present invention will be described below.

The writing method of the first magnetic memory device is as follows:
As an example, a magnetic memory device having the following configuration is used. 1 or 5, that is, the tunnel insulating layer 303 is sandwiched between a magnetization fixed layer (second magnetization fixed layer 308) made of a ferromagnetic material and a storage layer 304 made of a ferromagnetic material. The TMR element 13 is provided, and the write word line 11 is provided below the TMR element 13.
Is arranged and is provided with a bit line 12 connected to the upper surface of the TMR element and three-dimensionally intersecting (for example, orthogonal to) the write word line 11 in a magnetic memory device.

The magnetic memory device having such a structure records information by utilizing the fact that the resistance value changes depending on whether the spin directions of the storage layer 304 are parallel or antiparallel. At that time, at least one of the write word line 11 and the bit line 12 is heated to heat the storage layer 304 of the TMR element 13, in particular. As a result, the temperature of the TMR element 13 itself is raised and the reversal magnetization is lowered. TM with the write word line 11
When the R element 13 is heated, for example, the region of the write word line 11 facing the TMR element 13 may be formed of a high melting point / high resistance metal material. Alternatively, when the TMR element 13 is heated by the bit line 12, for example, the TMR element 1 of the bit line 12 is heated.
The region facing 3 may be formed of a high melting point / high resistance metal material. As the high melting point / high resistance metal material, the materials described above can be used.

In the first magnetic memory device writing method, the temperature of the TMR element 13 itself is raised by heating at least a part of the periphery of the TMR element 13, and writing is performed by lowering the reversal magnetization. As a result, the reversal magnetic field H _SW in the hard axis direction can be lowered, which facilitates writing.

Next, an embodiment according to the second writing method of the magnetic memory device of the present invention will be described below.

The second writing method of the magnetic memory device is as follows:
As an example, a magnetic memory device having the following configuration is used. The configuration as described with reference to FIG. 1,
In other words, the TMR element 13 is formed by sandwiching the tunnel insulating layer 303 between the magnetization fixed layer 302 (second magnetization fixed layer 308) made of a ferromagnetic material and the storage layer 304 made of a ferromagnetic material. Write word line 11 below
Is arranged and connected to the upper surface of the TMR element and is provided with a bit line which three-dimensionally intersects with the write word line 11 in the magnetic memory device.

The magnetic memory device having such a structure records information by utilizing the fact that the resistance value changes depending on whether the spin directions of the storage layer 304 are parallel or antiparallel. At this time, the TMR element 13 itself is heated by applying an alternating magnetic field to the TMR element 13 itself to generate an eddy current and causing Joule heat generation by the eddy current. That is, the TMR element 13 is heated by high frequency induction heating. One example thereof will be described with reference to FIG.

As shown in FIG. 6, in the TMR element 13, the antiferromagnetic material layer 305, the first magnetization fixed layer 306, the conductor layer 307 which is antiferromagnetically coupled, and the second magnetization fixed layer 30.
8, the magnetization fixed layer 302, the tunnel insulating film 303,
The memory layer 304, a heat generating layer 315 that generates heat when a high frequency is applied, and a cap layer 313 are sequentially stacked. The heating layer 315 is made of a material having a high resistance, such as iron and silicon, which generates heat when a high frequency is applied.

When writing, the TMR element 13 is used.
Apply high frequency to. As a result, a magnetic material (first magnetization fixed layer 306 made of a ferromagnetic layer, second magnetization fixed layer 308 made of a ferromagnetic layer, storage layer 304 made of a ferromagnetic layer and a high resistance material is used. An eddy current Isp is generated in the heating layer 315) by a high-frequency magnetic field, and the TMR element 13 itself is locally heated by Joule heat. Further, since each magnetic body itself generates heat, the heat generating layer 315 is not necessarily required, but the storage layer 3 is formed from both sides of the storage layer 304.
Since 04 can be heated, it is preferable to form the heat generating layer 315. Since aluminum, aluminum-copper alloy, copper and the like used for the wiring of the LSI have no magnetism, they do not generate heat even when a high frequency is applied.

In the second magnetic memory device writing method, the TMR element 13 itself is heated at a high frequency to lower the magnetization reversal magnetic field to perform the writing. Therefore, the reversal magnetic field H _SW in the hard axis direction is generated. Since it can be lowered, writing becomes easy.

Next, a first embodiment of a method of manufacturing a magnetic memory device according to the present invention will be described with reference to manufacturing process sectional views of FIGS.

First, although not shown, the semiconductor substrate is
A reading circuit including a reading transistor, a first insulating film that covers the reading circuit, and the like are formed. Then, as shown in (1) of FIG. 7, a first wiring 31, a sense line (not shown), and the like are formed on the first insulating film 41. A silicon oxide (P-TEOS) film 421 covering the first wiring 31, the sense line (not shown) and the like is formed on the first insulating film 41 by, for example, a plasma CVD method using tetraethoxysilane as a raw material. Is formed to a thickness of, for example, 100 nm, then a silicon oxide (HDP) film 422 is formed to a thickness of, for example, 800 nm by a high density plasma CVD method, and a silicon oxide (P-TEOS) film 423 is further formed.
To a thickness of 1200 nm, for example, to form a second insulating film 42. Then, the second insulating film 42 is polished by, for example, chemical mechanical polishing so as to leave a film thickness of, for example, 700 nm on the first wiring 31.

Next, an etching stopper layer 47, for example, silicon nitride (P-SiN), is formed on the planarized second insulating film 42 by, for example, a plasma CVD method.
The film is formed to have a thickness of 20 nm, for example. After that, a via hole pattern is opened in the etching stopper layer 47 through a resist coating step, a lithography step, and an etching step.

Next, P-TEO is formed on the etching stopper layer 47 so as to fill the via hole pattern.
An S film is formed to a thickness of 300 nm, for example, to form a third insulating film 43 (431). Then, after a resist coating process, a lithography process, and an etching process, the third
A wiring groove 49 is formed in the insulating film 431 and the via hole 48 reaching the first wiring 31 is opened again.
This etching step is performed under the condition that silicon oxide is selectively etched with respect to silicon nitride.

Next, PVD (Physical Vapor Deposit)
Ion method is used to form a barrier metal layer on each inner surface of the via hole 48 and the wiring groove 49, for example, by depositing a titanium nitride film to a thickness of 20 nm and then depositing a titanium film to a thickness of 5 nm. Then, by chemical vapor deposition, for example, tungsten is deposited as a wiring material so as to fill the via hole 48 and the wiring groove 49. Then, the excess tungsten and the barrier metal layer deposited on the third insulating film 431 are removed by chemical mechanical polishing, and the write word line 11 made of tungsten is formed in the wiring groove 49 via the barrier metal layer. ,
The second wiring 35 is formed and the via hole 4 is formed.
A plug 50 made of tungsten is formed in the electrode 8 through a barrier metal layer.

Thereafter, an upper layer third insulating film 43 (432) covering the write word line 11, the second wiring 35, etc. is formed on the third insulating film 431, for example, P-TEO.
The S film is formed by depositing it to a thickness of 100 nm, for example. In this way, the third insulating film 43 covering the write word line 11, the second wiring 35, etc. is formed.

Write word line 1 formed in the above process
The first material is, for example, one of iridium, osmium, chromium, zirconium, tungsten, tantalum, titanium thorium, vanadium, molybdenum, rhodium, nickel and ruthenium which is formed by PVD or CVD. A metal film or an alloy film composed of a plurality of kinds can be used.

Then, as shown in FIG. 7B, a mask is formed on the third insulating film 43 by a resist coating step and a lithography step, and then the second wiring is etched by using the mask. A via hole 51 connected to 35 is formed.

Then, the barrier layer 31 is formed by the PVD method.
5, the antiferromagnetic material layer 305, the magnetization fixed layer 302 made of a ferromagnetic material, the tunnel insulating layer 303, the storage layer 304 made of a ferromagnetic material, and the cap layer 313 are sequentially formed.

For the barrier layer 315, for example, titanium nitride, tantalum or tantalum nitride can be used. For the antiferromagnetic layer 305, for example, a manganese alloy such as iron / manganese, nickel / manganese, platinum / manganese, or iridium / manganese can be used.

For the magnetization fixed layer 302 made of a ferromagnetic material, for example, an alloy material such as nickel / iron or cobalt / iron can be used. The magnetization pinned layer 302 is pinned in the magnetization direction by exchange coupling with the antiferromagnetic layer 65.

The tunnel insulating layer 303 has, for example,
Aluminum oxide is used. This tunnel insulation layer 3
03 usually needs to be formed of a very thin film of about 0.5 nm to 5 nm, so that, for example, ALD (Atomic
It is formed by plasma oxidation after film formation by the layer deposition method or sputtering.

In the storage layer 304 made of a ferromagnetic material,
For example, an alloy material such as nickel / iron or cobalt / iron can be used. The storage layer 304 is the TMR element 1
The direction of the magnetization is changed by the external magnetic field applied to the magnetization fixed layer 3
It can be changed to parallel or antiparallel to 02.

The cap layer 313 can be formed of, for example, tungsten, tantalum, titanium nitride or the like.

Next, as shown in FIG. 7C, a mask is formed on the cap layer 313 by a resist coating step and a lithography step, and then the cap layer 313 to the barrier layer are etched by using the mask. The layer 315 is processed to form the TMR element 13. The etching end point is set so as to end in the middle of the tunnel insulating film 303 made of an aluminum oxide film and the lowermost antiferromagnetic material layer 305. In the drawing, etching is completed on the antiferromagnetic layer 305. For this etching, halogen gas containing chlorine (Cl) or carbon monoxide (CO) as ammonia (NH) is used as etching gas.
_Use a gas system with ₃ ) added.

Next, a resist mask is formed by a resist coating technique and a lithography technique, and the remaining TMR material is processed by reactive ion etching using the resist mask, so that the TMR element 13 and the second wiring 35 are formed. The bypass line 317 to be connected is formed using a part of the TMR laminated film. Here, the antiferromagnetic layer 305 and the barrier layer 315 are mainly formed.

Next, as shown in (4) of FIG.
Method or PVD method, a fourth insulating film 44 made of silicon oxide, aluminum oxide, or the like is deposited on the entire surface, and then the deposited fourth film is formed by chemical mechanical polishing.
The surface of the insulating film 44 of the TMR element 1
The uppermost cap layer 313 of No. 3 is exposed.

Then, by the standard wiring forming technique,
Bit lines 12 and wirings (not shown) for peripheral circuits and bonding pad regions (not shown) are formed. Further, a fifth insulating film 45 made of a plasma silicon nitride film is formed on the entire surface.
After forming, the bonding pad portion (not shown) is opened to complete the LSI wafer process step.

In the method of manufacturing the magnetic memory device described above, the TM
Since at least one of the bit line 12 and the write word line 11 (the write word line 11 in the above description) formed so as to sandwich the R element 13 and intersect three-dimensionally is formed of a high melting point / high resistance metal, When flowing, the part formed of the high melting point and high resistance metal causes Joule heat generation and heats the surrounding area. Therefore, TM
Since the R element 13 is also heated, the magnetic memory device 1 capable of lowering the switching field H _SW in the hard axis direction is formed.

As shown in the perspective view of the write word line in FIG. 8, in order to increase the resistance of the write word line 11, the write word line 11 immediately below the TMR element 13 is formed by thinning. You may do it.

Next, a second embodiment of the method of manufacturing a magnetic memory device according to the present invention will be described with reference to manufacturing process sectional views of FIGS.

First, although not shown, the semiconductor substrate is
A reading circuit including a reading transistor, a first insulating film that covers the reading circuit, and the like are formed. Then, as shown in (1) of FIG. 9, a first wiring 31, a sense line (not shown) and the like are formed on the first insulating film 41. A silicon oxide (P-TEOS) film 421 covering the first wiring 31, the sense line (not shown) and the like is formed on the first insulating film 41 by, for example, a plasma CVD method using tetraethoxysilane as a raw material. Is formed to a thickness of, for example, 100 nm, then a silicon oxide (HDP) film 422 is formed to a thickness of, for example, 800 nm by a high density plasma CVD method, and a silicon oxide (P-TEOS) film 423 is further formed.
To a thickness of 1200 nm, for example, to form a second insulating film 42. Then, the second insulating film 42 is polished by, for example, chemical mechanical polishing so as to leave a film thickness of, for example, 700 nm on the first wiring 31.

Next, an etching stopper layer 47, for example, silicon nitride (P-SiN), is formed on the planarized second insulating film 42 by, for example, a plasma CVD method.
The film is formed to have a thickness of 20 nm, for example. After that, a via hole pattern is opened in the etching stopper layer 47 through a resist coating step, a lithography step, and an etching step.

Then, P-TEO is formed on the etching stopper layer 47 so as to fill the via hole pattern.
An S film is formed to a thickness of 300 nm, for example, to form a third insulating film 43 (431). Then, after a resist coating process, a lithography process, and an etching process, the third
A wiring groove 49 is formed in the insulating film 431 and the via hole 48 reaching the first wiring 31 is opened again.
This etching step is performed under the condition that silicon oxide is selectively etched with respect to silicon nitride.

Next, a metal multi-layer film, for example, a titanium film is deposited to a thickness of 10 nm by PVD so as to fill the via hole 48 and the wiring groove 49, and then a titanium nitride film is deposited to a thickness of 30 nm. After that, an aluminum-copper alloy (for example, Al-0.5% Cu) film is formed to have a thickness of, for example, 700 nm. Then, the excess metal multilayer film deposited on the third insulating film 431 is removed by chemical mechanical polishing to form the second wiring 35 made of the metal multilayer film in the wiring groove 49, and A plug 50 made of a metal multilayer film is formed in the via hole 48.

Next, as shown in FIG. 9B, a barrier metal layer (not shown) covering the second wiring 35 is formed on the third insulating film 431, for example, titanium nitride is formed on the third insulating film 431.
It is formed by depositing to a thickness of 0 nm. Further, the high melting point / high resistance metal layer 92 is formed by depositing, for example, tungsten to a thickness of, for example, 200 nm by a chemical vapor deposition method. Then, a resist coating step, a lithography step,
The high melting point / high resistance metal layer 92 is subjected to an etching process.
The barrier metal layer is processed to form the write word line 11 using the high melting point / high resistance metal layer 92 as a main wiring material, and the high melting point / high resistance metal layer 92 is also formed on the second wiring 35. Form. Hereinafter, the high melting point / high resistance metal layer 92 formed on the second wiring 35 will be referred to as the second wiring 35. Next, an upper layer third insulating film 432 that covers the write word line 11 and the second wiring 35 is formed by depositing, for example, a P-TEOS film to a thickness of 500 nm. In this way, the third insulating film 43
Make up.

Thereafter, the surface of the third insulating film 43 is planarized by chemical mechanical polishing so that the third insulating film 43 remains on the high melting point / high resistance metal layer 92. In such a configuration, since the write word line 11 directly below the TMR element 13 to be formed later is formed of the barrier metal layer and the tungsten film, the resistance becomes high, and when a current is passed through the write word line 11, This part locally generates heat and is heated.

In the above manufacturing method, the tungsten film formed by the CVD method is used as the wiring material.
A metal film made of one of iridium, osmium, chromium, zirconium, tungsten, tantalum, titanium thorium, vanadium, molybdenum, rhodium, nickel and ruthenium, which is formed by the D method or the CVD method, or a plurality of kinds An alloy film can be used.

Next, as shown in FIG. 9C, a mask is formed on the third insulating film 43 by a resist coating process and a lithography process, and then the second wiring is formed by etching using the mask. A via hole 51 connected to 35 is formed.

Then, the barrier layer 31 is formed by the PVD method.
5, the antiferromagnetic material layer 305, the magnetization fixed layer 302 made of a ferromagnetic material, the tunnel insulating layer 303, the storage layer 304 made of a ferromagnetic material, and the cap layer 313 are sequentially formed.

For the barrier layer 315, for example, titanium nitride, tantalum or tantalum nitride can be used. For the antiferromagnetic layer 305, for example, a manganese alloy such as iron / manganese, nickel / manganese, platinum / manganese, or iridium / manganese can be used.

For the magnetization fixed layer 302 made of a ferromagnetic material, an alloy material such as nickel / iron or cobalt / iron can be used. The magnetization pinned layer 302 is pinned in the magnetization direction by exchange coupling with the antiferromagnetic layer 65.

The tunnel insulating layer 303 has, for example,
Aluminum oxide is used. This tunnel insulation layer 3
03 usually needs to be formed of a very thin film of about 0.5 nm to 5 nm, so that, for example, ALD (Atomic
It is formed by plasma oxidation after film formation by the layer deposition method or sputtering.

In the storage layer 304 made of a ferromagnetic material,
For example, an alloy material such as nickel / iron or cobalt / iron can be used. The storage layer 304 is the TMR element 1
The direction of the magnetization is changed by the external magnetic field applied to the magnetization fixed layer 3
It can be changed to parallel or antiparallel to 02.

The cap layer 313 can be formed of, for example, tungsten, tantalum, titanium nitride or the like.

Next, as shown in FIG. 9 (4), after a mask is formed on the cap layer 313 by a resist coating step and a lithography step, the cap layer 313 to the barrier layer are etched by using the mask. The layer 315 is processed to form the TMR element 13. The etching end point is set so as to end in the middle of the tunnel insulating film 303 made of an aluminum oxide film and the lowermost antiferromagnetic material layer 305. In the drawing, etching is completed on the antiferromagnetic layer 305. For this etching, halogen gas containing chlorine (Cl) or carbon monoxide (CO) as ammonia (NH) is used as etching gas.
_Use a gas system with ₃ ) added.

Next, a resist mask is formed by a resist coating technique and a lithography technique, and the remaining TMR material is processed by reactive ion etching using the resist mask, so that the TMR element 13 and the second wiring 35 are formed. The bypass line 317 to be connected is formed using a part of the TMR laminated film. Here, the antiferromagnetic layer 305 and the barrier layer 315 are mainly formed.

Next, as shown in (5) of FIG.
Method or PVD method, a fourth insulating film 44 made of silicon oxide, aluminum oxide, or the like is deposited on the entire surface, and then the deposited fourth film is formed by chemical mechanical polishing.
The surface of the insulating film 44 of the TMR element 1
The uppermost cap layer 313 of No. 3 is exposed.

Then, by the standard wiring forming technique,
Bit lines 12 and wirings (not shown) for peripheral circuits and bonding pad regions (not shown) are formed. Further, a fifth insulating film 45 made of a plasma silicon nitride film is formed on the entire surface.
After forming, the bonding pad portion (not shown) is opened to complete the LSI wafer process step.

In the method of manufacturing the magnetic memory device, the TM
A part of at least one of the bit line 12 and the write word line 11 (the write word line 11 in the above description) formed so as to sandwich the R element 13 and intersect three-dimensionally,
That is, of the write word line 11, the TMR element 1
Since the lower part of 3 is formed of a high melting point / high resistance metal, when a current is applied, the part formed of the high melting point / high resistance metal causes Joule heat generation and heats the surrounding area. Therefore, the TMR element 13 is also heated,
A magnetic memory device 1 capable of lowering the reversal magnetic field H _SW in the hard axis direction is formed.

As shown in the perspective view of the write word line of FIG. 10, in order to increase the resistance of the write word line 11, the line width of the write word line 11 near the upper side of the TMR element 13 is reduced. You may form it.
In the drawing, the wiring portion of the write word line 11 is formed of the high melting point / high resistance metal layer 92, and the third insulating film 43 (431) is formed under the wiring portion.
The electrode portion 11e of No. 1 is formed of a high melting point / high resistance metal layer 92 and a metal multi-layer film mainly composed of an aluminum alloy.

Next, a third embodiment of the method of manufacturing a magnetic memory device according to the present invention will be described with reference to FIG.

In the first and second embodiments, the write word line 11 is wholly or partially formed of a refractory metal having a high resistance to form a structure that promotes heat generation. The entire bit line or a part thereof may be formed in a similar heat generating structure. Also, write word line 1
Both 1 and the bit line 13 may be formed in whole or in part in the same heat generating structure.

Here, as a third embodiment of the method of manufacturing a magnetic memory device according to the present invention, a method of forming a part of a bit line with a refractory metal will be described with reference to the schematic cross-sectional view of FIG. To do. In the following description, the same components as those shown in FIGS. 1 and 5 are designated by the same reference numerals.

Until the TMR element 13 is formed, the same manufacturing steps as those in the first embodiment are performed. Here, TMR element 1
Processes after forming 3 will be described.

As shown in FIG. 11, the CVD method or the P method is used.
After the third insulating film 43 is formed of a silicon oxide film or an aluminum oxide film by the VD method, the surface of the third insulating film 43 is planarized by chemical mechanical polishing and the uppermost layer of the TMR element 13 is formed. The cap layer 313 is exposed.

Then, a barrier metal layer (not shown) covering the cap layer 313 is formed on the third insulating film 43.
For example, a titanium nitride film is deposited to a thickness of 20 nm, for example. Further, the tungsten film 94 is formed to a thickness of 500 nm, for example, by the chemical vapor deposition method.

Then, through a resist coating process, a lithography process, and an etching process, the bit line 12 using the tungsten film 94 as a main wiring material, a third wiring (not shown), and a bonding pad region (not shown) are formed. To do. As described in the first and second embodiments, the bit line 12 on the TMR element 13 may be formed with a narrow line width in order to further increase the resistance.

In this manufacturing method, the tungsten film is CV
Although the film was formed by the D method, for example, the PVD method or CV
A metal film made of one kind of iridium, osmium, chromium, zirconium, tungsten, tantalum, titanium thorium, vanadium, molybdenum, rhodium, nickel and ruthenium, or an alloy film made of a plurality of kinds, which is formed by the D method, Can be used. Further, a fourth insulating film 44 is formed on the entire surface by depositing, for example, plasma silicon nitride, and then the bonding pad portion is opened to complete the LSI wafer process step.

Next, a fourth embodiment of the method of manufacturing the magnetic memory device according to the present invention will be described with reference to FIG.

Until the TMR element 13 is formed, the same manufacturing steps as those in the first embodiment are performed. Here, TMR element 1
Processes after forming 3 will be described.

As shown in FIG. 12A, the third insulating film 43 is formed of a silicon oxide film or an aluminum oxide film by the CVD method or the PVD method, and then the third insulating film 43 is formed by chemical mechanical polishing. The surface of the insulating film 43 is flattened and the cap layer 313 of the uppermost layer of the TMR element 13 is exposed.

Then, the T film is formed on the third insulating film 43.
A barrier metal layer (not shown) covering the cap layer (not shown) of the MR element 13, for example, a titanium nitride film, for example, 2
It is formed by depositing to a thickness of 0 nm. Further, the high melting point / high resistance metal layer 94 is formed by depositing, for example, tungsten to a thickness of 200 nm, for example, by a chemical vapor deposition method.

Then, through a resist coating process, a lithography process, and an etching process, the bit line 12 using the high melting point / high resistance metal layer 94 as a main wiring material, peripheral circuit wiring (not shown), and a bonding pad region (not shown). Form). Like the write word line 11 described with reference to FIGS. 7 and 9, in order to further increase the resistance of the bit line 12, the bit line 1 directly above the TMR element 13
The line width of 2 may be formed thinner than other portions.

In this manufacturing method, tungsten is formed as the high melting point / high resistance metal layer 94 by the CVD method. For example, iridium, osmium, chromium, zirconium, tungsten which is formed by the PVD method or the CVD method is used. A metal film made of one of tantalum, tantalum, thorium titanate, vanadium, molybdenum, rhodium, nickel and ruthenium, or an alloy film made of a plurality of types can be used.

Then, on the third insulating film 43, a fourth insulating film 44 for covering the bit line 12, the peripheral circuit wiring (not shown) and the bonding pad region (not shown) is formed, for example, P-. A TEOS film is deposited to a thickness of 500 nm, for example. After that, the surface of the fourth insulating film 44 is planarized by chemical mechanical polishing.

Next, as shown in (2) of FIG. 12, the bit line 1 except for the area immediately above the TMR element 13 is subjected to a resist coating step, a lithography step, and an etching step.
The fourth insulating film 44 on the second insulating film 44 and the peripheral circuit wiring (not shown) and the fourth insulating film 44 on the bonding pad region (not shown) are removed by etching.

Next, as shown in (3) of FIG. 12, a wiring material layer 96 made of a titanium film, a titanium nitride film, an aluminum film or an aluminum-copper alloy film is formed, and the fourth layer is formed by, for example, chemical mechanical polishing. Excess wiring material layer 96 on the insulating film 44 is removed to form a wiring made of the wiring material layer 96 in the wiring groove. In this way, TM
The R element 13 is formed of the high melting point / high resistance metal layer 94, and the other portion is formed of the high melting point / high resistance metal layer 94 and the low resistance wiring material layer 96. Peripheral circuit wiring (not shown) including a melting point / high resistance metal layer 94 and a wiring material layer 96 and a bonding pad region (not shown) are formed.

Next, a fifth insulating film 45 is formed on the fourth insulating film 44 to cover the wirings, for example, by depositing a plasma silicon nitride film. After that, a bonding pad portion (not shown) is opened through a resist coating step, a lithography step, and an etching step, and the LSI wafer process step is completed. The fifth insulating film 4
The fourth insulating film 44 may be removed before forming 5.

[0120]

As described above, according to the magnetic memory device of the present invention, at least one of the bit line and the write word line arranged so as to intersect three-dimensionally with the tunnel magnetoresistive element in between. Since at least the portion facing the tunnel magnetoresistive element is formed of a high melting point / high resistance metal, when a current is applied,
A part formed of a high melting point / high resistance metal causes Joule heat generation and heats the surrounding area. Therefore, since the tunnel magnetoresistive element is also heated, the switching field H _SW in the hard axis direction can be lowered. That is, since the magnetization direction is easily reversed, the current consumption required for writing can be suppressed, and a low power consumption magnetic random access memory can be configured.

Since the current density of the wiring is also reduced,
A highly integrated magnetic random access memory highly integrated circuit can be realized. Further, since the switching magnetic field which increases with the miniaturization of the element is also reduced, the integration degree of the magnetic random access memory can be improved.

According to the first magnetic memory device writing method of the present invention, at least a part of the periphery of the tunnel magnetoresistive element is heated to raise the temperature of the tunnel magnetoresistive element itself and reduce the reversal magnetization. Since writing is performed by doing so, the switching field H _{SW in the} hard axis direction
Can be lowered. Therefore, current consumption required for writing can be suppressed, and writing can be facilitated.

According to the second magnetic memory device writing method of the present invention, since the magnetization reversal magnetic field is reduced by heating the tunnel magnetoresistive element itself, the writing is performed. The magnetic field H _SW can be lowered. Therefore, current consumption required for writing can be suppressed, and writing can be facilitated.

According to the method of manufacturing the magnetic memory device of the present invention, at least a part of the bit line and the write word line formed so as to sandwich the tunnel magnetoresistive element and intersect three-dimensionally are made of a refractory metal having a high melting point. Therefore, when an electric current is applied, the portion formed of the high melting point and high resistance metal causes Joule heat generation, and the surrounding area can be heated. Therefore, since the tunnel magnetoresistive element can be heated, it is possible to form a magnetic memory device capable of reducing the switching field H _SW in the hard axis direction. Therefore, since the current consumption required for writing can be suppressed, it is possible to configure the magnetic random access memory with low power consumption.

Since the current density of the wiring is also reduced,
A highly integrated magnetic random access memory highly integrated circuit can be manufactured. Further, since the switching magnetic field which increases with the miniaturization of the element is also reduced, the integration degree of the magnetic random access memory can be improved.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of the configuration of FIG. 1 showing an embodiment of a magnetic memory device of the present invention.

FIG. 2 is a general MRAM (Magnetic Random Access M).
FIG. 2 is a schematic configuration perspective view showing a simplified main part showing an emory).

[FIG. 3] Easy axis magnetic field H _EA and hard axis magnetic field H
₃ is an asteroid curve showing the reversal threshold of the magnetization direction of the memory layer by _HA .

4 is a circuit diagram showing a principle circuit of the MRAM of FIG.

FIG. 5 is a perspective view showing a tunnel magnetoresistive element.

FIG. 6 is a schematic configuration perspective view illustrating an embodiment according to a second writing method of the magnetic memory device of the present invention.

FIG. 7 is a manufacturing step sectional view showing the first embodiment of the method of manufacturing the magnetic memory device according to the present invention.

FIG. 8 is a perspective view of a write word line according to the first embodiment of the manufacturing method.

FIG. 9 is a manufacturing step sectional view showing a second embodiment of the method of manufacturing the magnetic memory device according to the present invention.

FIG. 10 is a perspective view of a write word line according to the first embodiment of the manufacturing method.

FIG. 11 is a manufacturing step sectional view showing a third embodiment of a method of manufacturing a magnetic memory device according to the present invention.

FIG. 12 is a manufacturing step sectional view showing a fourth embodiment of a method of manufacturing a magnetic memory device according to the present invention.

[Explanation of symbols]

1 ... Magnetic memory device, 11 ... Write word line, 12 ...
Bit line, 13 ... Tunnel magnetic resistance (TMR) element, 3
02 ... Magnetization fixed layer, 303 ... Tunnel insulating layer, 304 ...
Storage layer

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5F083 FZ10 JA36 JA37 JA38 JA39                       JA40 JA56 KA01 KA05 KA20                       MA06 MA16 MA19 NA01 PR06                       PR40

Claims (9)

[Claims] 1. A tunnel magnetoresistive element having a tunnel insulating layer sandwiched between ferromagnetic materials, the information being obtained by utilizing the fact that the resistance value changes depending on whether the spin directions of the ferromagnetic material are parallel or antiparallel. In a non-volatile magnetic memory device for storing, at least one of a bit line and a write word line arranged so as to intersect three-dimensionally with the tunnel magnetoresistive element in between is opposed to at least the tunnel magnetoresistive element. The magnetic memory device is characterized in that the region is formed of a metal having a high melting point and a high resistance. 2. The refractory metal having a high melting point is one of iridium, osmium, chromium, zirconium, tungsten, tantalum, titanium, thorium, vanadium, molybdenum, rhodium, nickel and ruthenium.
The magnetic memory device of claim 1, wherein the magnetic memory device comprises a seed. 3. A tunnel magnetoresistive element in which a tunnel insulating layer is sandwiched by ferromagnetic materials is provided, and information is obtained by utilizing the fact that the resistance value changes depending on whether the spin directions of the ferromagnetic material are parallel or antiparallel. In a writing method of a nonvolatile magnetic memory device for storing, by heating at least a part of the periphery of the tunnel magnetoresistive element, the temperature of the tunnel magnetoresistive element itself is raised and the reversal magnetization is lowered. Method for writing magnetic memory device. 4. The method for writing in a magnetic memory device according to claim 3, wherein the heating raises a temperature of at least a spin-reversing storage layer of the tunnel magnetoresistive element. 5. In order to heat at least a part of the periphery of the tunnel magnetoresistive element, one of a bit line and a write word line arranged to intersect three-dimensionally with the tunnel magnetoresistive element in between. 4. The magnetic memory according to claim 3, wherein at least one of the regions facing at least the tunnel magnetoresistive element is formed of a resistance heating body, and Joule heat generated by passing an electric current through the resistance heating body is used. Device writing method. 6. A tunnel magnetoresistive element having a tunnel insulating layer sandwiched between ferromagnetic bodies, wherein information is obtained by utilizing the fact that the resistance value changes depending on whether the spin directions of the ferromagnetic bodies are parallel or antiparallel. In a writing method of a nonvolatile magnetic memory device for storing, by heating the tunnel magnetoresistive element itself,
A method for writing to a magnetic memory device, which comprises reducing a magnetization reversal magnetic field. 7. The method of writing in a magnetic field memory device according to claim 6, wherein the method of heating the tunnel magnetoresistive element itself includes applying an alternating magnetic field to the tunnel magnetoresistive element to generate Joule heat by an eddy current. . 8. A tunnel magnetoresistive element having a tunnel insulating layer sandwiched between ferromagnetic materials, wherein information is obtained by utilizing the fact that the resistance value changes depending on whether the spin directions of the ferromagnetic material are parallel or antiparallel. In a method of manufacturing a nonvolatile magnetic memory device for storing, at least a part of a bit line and a write word line formed so as to sandwich the tunnel magnetoresistive element and intersect three-dimensionally are formed of a high melting point / high resistance metal. A method of manufacturing a magnetic memory device, comprising: 9. The high melting point / high resistance metal is one of iridium, osmium, chromium, zirconium, tungsten, tantalum, titanium, thorium, vanadium, molybdenum, rhodium, nickel and ruthenium.
9. The method of manufacturing a magnetic memory device according to claim 8, wherein the magnetic memory device comprises a seed.