JP2003133335A5 - - Google Patents
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- JP2003133335A5 JP2003133335A5 JP2001330194A JP2001330194A JP2003133335A5 JP 2003133335 A5 JP2003133335 A5 JP 2003133335A5 JP 2001330194 A JP2001330194 A JP 2001330194A JP 2001330194 A JP2001330194 A JP 2001330194A JP 2003133335 A5 JP2003133335 A5 JP 2003133335A5
- Authority
- JP
- Japan
- Prior art keywords
- znte
- single crystal
- compound semiconductor
- semiconductor single
- based compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910007709 ZnTe Inorganic materials 0.000 claims 13
- 150000001875 compounds Chemical class 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000002019 doping agent Substances 0.000 claims 3
- 239000000969 carrier Substances 0.000 claims 2
- RPPBZEBXAAZZJH-UHFFFAOYSA-N Cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 229910004611 CdZnTe Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 125000004429 atoms Chemical group 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Claims (6)
- 基板上にＺｎＴｅ系化合物半導体単結晶をエピタキシャル成長させる際、ＺｎＴｅ系化合物半導体単結晶の導電型をｎ型に制御する第１３（３Ｂ）族元素からなる第１のドーパントと、Ｔｅ元素との結合エネルギーが、Ｚｎ元素とＴｅ元素との結合エネルギーと同等またはそれ以上である第２（２Ａ）族元素からなる第２のドーパントとを、前記ＺｎＴｅ系化合物半導体単結晶中に同時にドーピングすることを特徴とするＺｎＴｅ系化合物半導体単結晶の製造方法。
- 前記第２のドーパントは、原子個数でＺｎ空孔の濃度以上（〜１０１８ｃｍ−３以上）、かつ、前記ＺｎＴｅ系化合物半導体単結晶中の濃度が１ａｔ％以下となるようにドーピングされることを特徴とする請求項１に記載のＺｎＴｅ系化合物半導体単結晶の製造方法。
- 前記第１３（３Ｂ）族元素はＡｌ、Ｇａ、Ｉｎのうちの少なくとも一つを含み、前記第２（２Ａ）族元素はＢｅ、Ｍｇ、Ｃａのうち少なくとも一つ含むことを特徴とする請求項１または請求項２に記載のＺｎＴｅ系化合物半導体単結晶の製造方法。
- 前記ＺｎＴｅ系化合物半導体単結晶は、ＺｎＴｅ、ＣｄＴｅ、ＣｄＺｎＴｅ、ＺｎＯＴｅ、ＺｎＳＴｅ、ＺｎＳｅＴｅ、ＣｄＳｅＴｅ、ＣｄＳＴｅ、ＣｄＯＴｅ、ＣｄＺｎＯＴｅ、ＣｄＺｎＳＴｅ、ＣｄＺｎＳｅＴｅのいずれかであることを特徴とする請求項１から請求項３のいずれかに記載のＺｎＴｅ系化合物半導体単結晶の製造方法。
- 請求項１から請求項４の何れかに記載の製造方法により得られるｎ型ＺｎＴｅ系化合物半導体単結晶であって、キャリア濃度が１×１０１８ｃｍ−３以上で、かつキャリア移動度が１３０ｃｍ２／Ｖ・ｓｅｃ以上であることを特徴とするＺｎＴｅ系化合物半導体単結晶。
- 抵抗が０．０５Ω・ｍ以下であることを特徴とする請求項５に記載のＺｎＴｅ系化合物半導体単結晶。
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001330194A JP3976543B2 (ja) | 2001-10-29 | 2001-10-29 | ＺｎＴｅ系化合物半導体の製造方法およびＺｎＴｅ系化合物半導体並びに半導体装置 |
| EP02705375A EP1388597B1 (en) | 2001-04-04 | 2002-03-20 | METHOD FOR MANUFACTURING n-type ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ON A ZNTE SUBSTRATE AND SEMICONDUCTOR DEVICE |
| US10/472,446 US7358159B2 (en) | 2001-04-04 | 2002-03-20 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| PCT/JP2002/002642 WO2002081789A1 (fr) | 2001-04-04 | 2002-03-20 | Procede de fabrication de monocristal semi-conducteur a compose znte et dispositif semi-conducteur mettant en oeuvre un tel monocristal |
| CNB028078659A CN100360721C (zh) | 2001-04-04 | 2002-03-20 | ZnTe系化合物半导体单晶的制造方法和ZnTe系化合物半导体单晶及半导体器件 |
| TW091106609A TW593801B (en) | 2001-04-04 | 2002-04-02 | Method for manufacturing ZnTe compound semiconductor single crystal, ZnTe compound semiconductor single crystal, and semiconductor device |
| US11/984,941 US7517720B2 (en) | 2001-04-04 | 2007-11-26 | Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| US11/984,950 US20080089831A1 (en) | 2001-04-04 | 2007-11-26 | Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| US11/984,942 US7521282B2 (en) | 2001-04-04 | 2007-11-26 | Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| US11/984,943 US7696073B2 (en) | 2001-04-04 | 2007-11-26 | Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal |
| US11/984,944 US7629625B2 (en) | 2001-04-04 | 2007-11-26 | Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001330194A JP3976543B2 (ja) | 2001-10-29 | 2001-10-29 | ＺｎＴｅ系化合物半導体の製造方法およびＺｎＴｅ系化合物半導体並びに半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003133335A JP2003133335A (ja) | 2003-05-09 |
| JP2003133335A5 true JP2003133335A5 (ja) | 2005-03-17 |
| JP3976543B2 JP3976543B2 (ja) | 2007-09-19 |
Family
ID=19145956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001330194A Expired - Fee Related JP3976543B2 (ja) | 2001-04-04 | 2001-10-29 | ＺｎＴｅ系化合物半導体の製造方法およびＺｎＴｅ系化合物半導体並びに半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3976543B2 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1695388A2 (en) * | 2003-12-01 | 2006-08-30 | The Regents Of The University Of California | Multiband semiconductor compositions for photovoltaic devices |
| US7709728B2 (en) | 2004-11-29 | 2010-05-04 | The Regents Of The University Of California | Multiband semiconductor compositions for photovoltaic devices |
-
2001
- 2001-10-29 JP JP2001330194A patent/JP3976543B2/ja not_active Expired - Fee Related
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