JP2003128496A - Method for producing and apparatus for producing single crystal - Google Patents
Method for producing and apparatus for producing single crystalInfo
- Publication number
- JP2003128496A JP2003128496A JP2001324487A JP2001324487A JP2003128496A JP 2003128496 A JP2003128496 A JP 2003128496A JP 2001324487 A JP2001324487 A JP 2001324487A JP 2001324487 A JP2001324487 A JP 2001324487A JP 2003128496 A JP2003128496 A JP 2003128496A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- producing
- crystal
- reflector
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は単結晶の製造装置
および製造方法に関し、特に、チョクラルスキー法によ
るたとえば酸化物単結晶を製造する単結晶の製造装置お
よび製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal manufacturing apparatus and manufacturing method, and more particularly to a single crystal manufacturing apparatus and manufacturing method for manufacturing, for example, an oxide single crystal by the Czochralski method.
【０００２】[0002]
【従来の技術】従来、単結晶の製造方法の１つとしてチ
ョクラルスキー法が用いられている。チョクラルスキー
法による単結晶の製造は、保温材によって囲まれた白金
などの貴金属からなる坩堝に単結晶原料を入れ、坩堝の
周囲に設置された高周波誘導加熱などの加熱手段により
単結晶原料を融解し、この単結晶原料の融液に種結晶を
接触させて鉛直方向に引き上げることによって行われ
る。単結晶の育成は、まずネック部とよばれる種結晶と
同程度またはこれより小さい径の単結晶を引き上げ、次
に肩部と呼ばれるネック部の結晶径を除々に所望の結晶
径まで大きくする部分を作製する。その後、所望の結晶
径となるように高周波出力を調整しながら結晶の育成を
行い、最後に単結晶を融液から切り離して徐冷する。チ
ョクラルスキー法による単結晶の製造では、製造する結
晶に適した温度分布となるように保温材などで構成した
ホットゾーンによって温度環境を制御し、育成中の異方
位成長および結晶のねじれ、冷却中のクラックなどの発
生を抑える。通常、ホットゾーンは耐火煉瓦によって構
成されるが、保温性を向上させるために、アフターヒー
タなどの熱源を配置することやたとえば特開平５−２２
１７８６号に開示されているように反射板を配置して輻
射による放熱を抑えることが試みられている。ここで、
高周波誘導加熱により坩堝の加熱を行う場合には、金属
製の反射板を配置すると、反射板自体も誘導加熱される
ため、反射板はアフターヒータとしても機能する。2. Description of the Related Art Conventionally, the Czochralski method has been used as one of the methods for producing a single crystal. In the production of single crystals by the Czochralski method, the single crystal raw material is placed in a crucible made of a precious metal such as platinum surrounded by a heat insulating material, and the single crystal raw material is heated by heating means such as high frequency induction heating installed around the crucible. It is carried out by melting, bringing a seed crystal into contact with the melt of the single crystal raw material, and pulling it up in the vertical direction. A single crystal is grown by first pulling up a single crystal having a diameter equal to or smaller than that of a seed crystal called a neck portion, and then gradually increasing the crystal diameter of a neck portion called a shoulder portion to a desired crystal diameter. To make. Then, the crystal is grown while adjusting the high frequency output so as to obtain a desired crystal diameter, and finally the single crystal is separated from the melt and gradually cooled. In the production of single crystals by the Czochralski method, the temperature environment is controlled by a hot zone composed of a heat insulating material so that the temperature distribution suitable for the crystal to be produced is controlled, and heterogeneous growth during growth, crystal twisting, and cooling Suppress the generation of cracks inside. Usually, the hot zone is made of refractory bricks, but in order to improve heat retention, a heat source such as an after-heater may be arranged or, for example, JP-A-5-22.
As disclosed in No. 1786, it has been attempted to arrange a reflection plate to suppress heat radiation due to radiation. here,
When the crucible is heated by high-frequency induction heating, if a metal reflection plate is arranged, the reflection plate itself is also induction-heated, so that the reflection plate also functions as an after-heater.
【０００３】[0003]
【発明が解決しようとする課題】ところが、チョクラル
スキー法によって製造した単結晶は、通常、坩堝から回
転させながら引き上げられるため、円柱状の単結晶とな
る。しかし、結晶方位によって成長速度が大きく異なる
単結晶を育成する場合、育成した単結晶は角柱状になっ
たり楕円柱状になったりする。このため、育成した結晶
から円板状のウエハを採取する際には、大きく研削する
必要が生じ、効率が悪い。そのため、より円柱に近い結
晶形状が求められる。また、逆に角板状のウエハを採取
したい場合には、円柱状の育成結晶から採取するのは効
率が悪く、より角柱に近い結晶形状が求められる。この
ため、単結晶の育成時には、引上げ軸に垂直な断面が所
望のウエハ形状に近い単結晶を育成することが望まし
い。However, since the single crystal produced by the Czochralski method is usually pulled up while being rotated from the crucible, it becomes a columnar single crystal. However, when growing a single crystal having a growth rate that greatly differs depending on the crystal orientation, the grown single crystal has a prismatic shape or an elliptic cylinder shape. For this reason, when collecting a disk-shaped wafer from the grown crystal, it is necessary to grind it large, which is inefficient. Therefore, a crystal shape closer to a cylinder is required. On the contrary, when it is desired to collect a rectangular plate-shaped wafer, it is inefficient to collect it from a columnar grown crystal, and a crystal shape closer to a prism is required. Therefore, when growing a single crystal, it is desirable to grow a single crystal whose cross section perpendicular to the pulling axis is close to the desired wafer shape.
【０００４】それゆえに、この発明の主たる目的は、所
望のウエハの形状に近い断面形状を持つ単結晶を製造す
ることができる単結晶の製造装置および製造方法を提供
することである。Therefore, a main object of the present invention is to provide a single crystal manufacturing apparatus and manufacturing method capable of manufacturing a single crystal having a cross-sectional shape close to a desired wafer shape.
【０００５】[0005]
【課題を解決するための手段】この発明にかかる単結晶
の製造装置は、チョクラルスキー法による単結晶の製造
装置において、反射板が、単結晶と同期して回転するよ
うに、単結晶の上部にかつ単結晶引上げ軸の周方向であ
って単結晶からの放熱が抑制される位置に部分的に配置
されていることを特徴とする、単結晶の製造装置であ
る。また、この発明にかかる単結晶の製造装置では、反
射板はたとえば単結晶引上げ軸に設けられている。さら
に、この発明にかかる単結晶の製造装置では、反射板は
たとえば貴金属製である。この発明にかかる単結晶の製
造方法は、この発明にかかる単結晶の製造方法を用いて
単結晶を製造する、単結晶の製造方法である。この発明
にかかる単結晶の製造方法では、製造される単結晶は酸
化物である。この発明にかかる単結晶の製造方法では、
製造される単結晶はたとえばＬａ3Ｇａ5 ＳｉＯ14単結
晶である。チョクラルスキー法による単結晶の育成で
は、固液界面での凝固潜熱は育成した結晶を介してホッ
トゾーン上部へと伝えられる。このため、結晶のある特
定の部分だけ潜熱の伝達を抑えるとその部分の結晶成長
速度は低下する。潜熱の伝達を抑えるには結晶の周囲に
反射板を設置して輻射による熱の逃げを抑制するのが有
効である。しかし、通常使用されているようなホットゾ
ーン上部に設置された円筒状または円錐状の反射板で
は、引上げ軸方向については輻射による放熱効率の大小
を発生させることができるが、引上げ軸周方向の放熱効
率は一定となる。また、反射板に切込みを入れたり形状
を変形させたりして引上げ軸周方向の放熱効率に変化を
つけた場合であっても、結晶は反射板に対して回転しな
がら育成されるため、これらの効果は平均化されて結晶
の特定の部分だけの放熱効率を低下させることはできな
い。そこで、引上げ軸に垂直な結晶断面形状を所望の形
状となるように育成するためには、結晶の引上げ軸周方
向について放熱効果の小さい部分を作り、この部分の径
方向への成長を抑える必要がある。このためには、本願
発明のように、結晶の成長を抑えたい特定の方向に部分
的に反射板を配置し、かつ、この反射板を育成結晶と同
期して回転させればよい。特開平５−２２１７８６号で
は、引上げ軸に笠状の反射板を設け、シリコン単結晶の
成長初期に発生する酸化誘起積層欠陥を抑えることが試
みられている。しかし、このような反射板は結晶と同期
して回転することは可能であるが、引上げ軸周方向の放
熱抑制効果は一定となるため、引上げ軸に垂直な結晶断
面形状の制御を行うことはできない。よって、結晶と同
期して回転する反射板としては、本願発明のように、引
上げ軸周方向の放熱効果に差違が発生するように、引上
げ方向から見て部分的に配置された反射板を使用する必
要があるのである。A single crystal manufacturing apparatus according to the present invention is a single crystal manufacturing apparatus according to the Czochralski method, wherein the reflector is rotated in synchronization with the single crystal. An apparatus for producing a single crystal, characterized in that the single crystal is partially disposed at an upper portion in a circumferential direction of a pulling axis of the single crystal and in which heat radiation from the single crystal is suppressed. Further, in the single crystal manufacturing apparatus according to the present invention, the reflecting plate is provided, for example, on the single crystal pulling shaft. Further, in the single crystal manufacturing apparatus according to the present invention, the reflector is made of, for example, a noble metal. The method for producing a single crystal according to the present invention is a method for producing a single crystal using the method for producing a single crystal according to the present invention. In the method for producing a single crystal according to the present invention, the produced single crystal is an oxide. In the method for producing a single crystal according to the present invention,
The single crystal produced is, for example, a La 3 Ga 5 SiO 14 single crystal. In growing a single crystal by the Czochralski method, the latent heat of solidification at the solid-liquid interface is transferred to the upper part of the hot zone through the grown crystal. Therefore, if the transfer of latent heat is suppressed only in a specific part of the crystal, the crystal growth rate of that part is reduced. In order to suppress the transfer of latent heat, it is effective to install a reflector around the crystal to suppress the escape of heat due to radiation. However, with a cylindrical or conical reflection plate installed in the upper part of the hot zone, which is usually used, it is possible to generate large or small heat radiation efficiency by radiation in the pulling axis direction. The heat dissipation efficiency is constant. Even when the heat dissipation efficiency in the pulling shaft circumferential direction is changed by making a cut or deforming the shape of the reflector, the crystal grows while rotating with respect to the reflector. The effect of is not averaged and the heat dissipation efficiency of only a specific part of the crystal cannot be reduced. Therefore, in order to grow the crystal cross-sectional shape perpendicular to the pulling axis to a desired shape, it is necessary to create a portion with a small heat radiation effect in the circumferential direction of the pulling axis of the crystal and suppress the radial growth of this portion. There is. To this end, as in the present invention, a reflecting plate may be partially arranged in a specific direction in which crystal growth is desired to be suppressed, and this reflecting plate may be rotated in synchronization with the grown crystal. JP-A-5-221786 attempts to suppress an oxidation-induced stacking fault that occurs at the initial stage of the growth of a silicon single crystal by providing a pull-up shaft with a cap-shaped reflector. However, although such a reflector can be rotated in synchronization with the crystal, the effect of suppressing heat radiation in the circumferential direction of the pulling axis is constant, so it is not possible to control the crystal cross-sectional shape perpendicular to the pulling axis. Can not. Therefore, as the reflecting plate that rotates in synchronism with the crystal, as in the present invention, a reflecting plate partially arranged when viewed from the pulling direction is used so that a difference in heat radiation effect in the pulling shaft circumferential direction occurs. It is necessary to do it.
【０００６】この発明の上述の目的、その他の目的、特
徴および利点は、図面を参照して行う以下の発明の実施
の形態の詳細な説明から一層明らかとなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments of the invention with reference to the drawings.
【０００７】[0007]
【発明の実施の形態】（実施例１）図１はこの発明にか
かる単結晶の製造装置の一例を示す断面図解図であり、
図２はその単結晶の製造装置に用いられる反射板を示す
図解図であり、図３はその反射板の平面図である。図１
に示す単結晶の製造装置１０はチャンバー１２を含む。
チャンバー１２の内部には、高周波誘導コイル１４が配
置される。高周波誘導コイル１４の内側には、保温材と
してアルミナ炉材からなるホットゾーン１６が設けられ
る。ホットゾーン１６の中央には、たとえば白金ロジウ
ムからなる外径１００ｍｍ高さ１００ｍｍの坩堝１８が
配置される。この坩堝１８の中には、単結晶原料２０が
充填される。また、坩堝１８の上方には、たとえばアル
ミナからなる単結晶引上げ軸２２が設けられる。単結晶
引上げ軸２２の下端には、種結晶保持具２４が固着され
る。この種結晶保持具２４の下には、種結晶２６が保持
される。また、単結晶引上げ軸２２の下端には、種結晶
保持具２４および線状の支持部材２８を介して、たとえ
ば白金からなる６枚の羽状の反射板３０が取り付けられ
る。この場合、６枚の反射板３０は、種結晶２６のDETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) FIG. 1 is a schematic sectional view showing an example of an apparatus for producing a single crystal according to the present invention.
FIG. 2 is an illustrative view showing a reflector used in the apparatus for producing the single crystal, and FIG. 3 is a plan view of the reflector. Figure 1
The single crystal manufacturing apparatus 10 shown in FIG.
A high frequency induction coil 14 is arranged inside the chamber 12. Inside the high frequency induction coil 14, a hot zone 16 made of alumina furnace material is provided as a heat insulating material. At the center of the hot zone 16, a crucible 18 made of, for example, platinum rhodium and having an outer diameter of 100 mm and a height of 100 mm is arranged. A single crystal raw material 20 is filled in the crucible 18. A single crystal pulling shaft 22 made of, for example, alumina is provided above the crucible 18. A seed crystal holder 24 is fixed to the lower end of the single crystal pulling shaft 22. A seed crystal 26 is held under the seed crystal holder 24. Further, at the lower end of the single crystal pulling shaft 22, six feather-shaped reflecting plates 30 made of, for example, platinum are attached via a seed crystal holder 24 and a linear supporting member 28. In this case, the six reflectors 30 are made of the seed crystal 26.
【数１】
に配置される。また、この場合、６枚の反射板３０は、
特に図２に示すように、最大径が７０ｍｍになるように
配置される。[Equation 1] Is located in. Further, in this case, the six reflectors 30 are
In particular, as shown in FIG. 2, they are arranged so that the maximum diameter is 70 mm.
【０００８】次に、この単結晶の製造装置１０を用いて
単結晶を製造する方法について説明する。まず、製造す
る単結晶としてＬａ3 Ｇａ5 ＳｉＯ14を選び、単結晶原
料２０としてはＬａ2 Ｏ3 、Ｇａ2 Ｏ3 、ＳｉＯ2 をそ
れぞれ１５３７．１ｇ、１４７３．９ｇ、１８９．０ｇ
乾式混合し、これをプレス成形した後に、単結晶の製造
装置１０の坩堝１８に充填した。単結晶の育成は、ホッ
トゾーン１６を使用した。雰囲気ガスとしては、Ｎ2 ガ
スに２ｖｏｌ％のＯ2 ガスを混入した混合ガスをホット
ゾーン１６の下部より流すこととした。単結晶原料２０
の加熱方法は、高周波誘導コイル１４で高周波誘導加熱
により行った。種結晶２６には、＜０００１＞面方位に
垂直な５ｍｍ×５ｍｍの断面を有する長さ５０ｍｍの棒
状のＬａ3 Ｇａ5 ＳｉＯ14単結晶を用いた。種結晶２６
を単結晶原料２０の融液に接触させた。そして、回転数
１９ｒｐｍで引上げ速度１．５ｍｍ／時間で種結晶２６
の引上げを行い、肩部において徐々に単結晶原料２０の
融液の温度を下げることによって単結晶の直径を大きく
した。また、円柱換算で単結晶の直径が５５ｍｍとなる
ようにすなわち３０．２ｇ／時間の重量増加速度になる
ように、高周波誘導コイル１４に接続されている高周波
発振器（図示せず）の出力を調節しながら単結晶を育成
した。その後、３０時間単結晶の直胴部の引上げを行
い、単結晶を単結晶原料２０の融液から切り離して徐冷
した。引き上げた単結晶は、６角柱の角が取れて円柱に
近い角柱状であり、直胴部における直径の最大値は５
６．５ｍｍで最小値は５４．２ｍｍであった。Next, a method for producing a single crystal using this single crystal producing apparatus 10 will be described. First, La 3 Ga 5 SiO 14 is selected as the single crystal to be manufactured, and La 2 O 3 , Ga 2 O 3 , and SiO 2 are used as the single crystal raw material 20 in 1537.1 g, 1473.9 g, and 189.0 g, respectively.
After dry mixing and press molding, the crucible 18 of the single crystal manufacturing apparatus 10 was filled. The hot zone 16 was used for growing the single crystal. As the atmosphere gas, a mixed gas of 2 vol% O 2 gas mixed with N 2 gas was made to flow from the lower part of the hot zone 16. Single crystal raw material 20
The heating method was performed by high frequency induction heating with the high frequency induction coil 14. As the seed crystal 26, a rod-shaped La 3 Ga 5 SiO 14 single crystal having a cross section of 5 mm × 5 mm perpendicular to the <0001> plane orientation and a length of 50 mm was used. Seed crystal 26
Was brought into contact with the melt of the single crystal raw material 20. Then, at a rotation speed of 19 rpm and a pulling speed of 1.5 mm / hour, the seed crystal 26
And the temperature of the melt of the single crystal raw material 20 was gradually lowered at the shoulder to increase the diameter of the single crystal. In addition, the output of a high-frequency oscillator (not shown) connected to the high-frequency induction coil 14 is adjusted so that the diameter of the single crystal becomes 55 mm in cylinder conversion, that is, the weight increasing rate of 30.2 g / hour. While growing a single crystal. After that, the straight body portion of the single crystal was pulled for 30 hours, the single crystal was separated from the melt of the single crystal raw material 20, and gradually cooled. The pulled single crystal is a prism having a hexagonal prism with a corner close to a cylinder, and the maximum diameter of the straight body is 5
At 6.5 mm, the minimum value was 54.2 mm.
【０００９】（実施例２）実施例２では、実施例１と同
様のホットゾーン１６を有する単結晶の製造装置１０
と、実施例１と同じ単結晶原料２０、種結晶２６および
雰囲気ガスとを使用した。ただし、実施例２では、図４
および図５に示すように、単結晶引上げ軸２２に種結晶
２６の(Embodiment 2) In Embodiment 2, a single crystal manufacturing apparatus 10 having a hot zone 16 similar to that of Embodiment 1 is used.
And the same single crystal raw material 20, seed crystal 26, and atmosphere gas as in Example 1 were used. However, in the second embodiment, as shown in FIG.
Further, as shown in FIG. 5, the single crystal pulling shaft 22 is provided with a seed crystal 26.
【数２】
に白金からなる２枚の羽状の反射板３０が取り付けられ
ている。実施例２では、まず、種結晶２６を単結晶原料
の融液に接触させた。そして、回転数１９ｒｐｍで引上
げ速度１．５ｍｍ／時間で種結晶２６の引上げを行い、
肩部において徐々に単結晶原料の融液の温度を下げるこ
とによって単結晶の直径を大きくし、円柱換算で単結晶
の直径が５５ｍｍとなるようにすなわち３０．２ｇ／時
間の重量増加速度になるように、高周波発振器の出力を
調整しながら単結晶を育成した。その後、３０時間単結
晶の直胴部の引上げを行い、単結晶を単結晶原料の融液
から切り離して徐冷した。引き上げた単結晶の断面形状
は、図６に示すように、６角形の２つの角が取れた長方
形に近い形状となった。[Equation 2] Two feather-shaped reflectors 30 made of platinum are attached to the. In Example 2, first, the seed crystal 26 was brought into contact with the melt of the single crystal raw material. Then, the seed crystal 26 is pulled up at a rotation speed of 19 rpm at a pulling rate of 1.5 mm / hour,
The diameter of the single crystal is increased by gradually lowering the temperature of the melt of the single crystal raw material at the shoulder so that the diameter of the single crystal becomes 55 mm in terms of a cylinder, that is, a weight increasing rate of 30.2 g / hour. Thus, a single crystal was grown while adjusting the output of the high frequency oscillator. Thereafter, the straight body portion of the single crystal was pulled for 30 hours, the single crystal was separated from the melt of the single crystal raw material, and gradually cooled. As shown in FIG. 6, the cross-sectional shape of the pulled single crystal was a shape close to a rectangle with two hexagonal corners.
【００１０】（比較例１）実施例１と同様のホットゾー
ン１６を有する単結晶の製造装置１０と、実施例１と同
じ単結晶原料２０および種結晶２６とを使用した。ただ
し、比較例１では、製造装置において、反射板を設けて
いない。まず、種結晶を単結晶原料の融液に接触させ
た。そして、回転数１９ｒｐｍで引上げ速度１．５ｍｍ
／時間で種結晶の引上げを行い、肩部において徐々に単
結晶原料の融液の温度を下げることによって単結晶の直
径を大きくした。また、円柱換算で単結晶の直径が５５
ｍｍとなるようにすなわち３０．２ｇ／時間の重量増加
速度になるように、単結晶を育成した。その後、３０時
間単結晶の直胴部の引上げを行い、単結晶を単結晶原料
の融液から切り離して徐冷した。引き上げた単結晶は、
６角柱状であり、直胴部における直径の最大値は６０．
０ｍｍで最小値は５２．０ｍｍであった。Comparative Example 1 A single crystal manufacturing apparatus 10 having the same hot zone 16 as in Example 1 and the same single crystal raw material 20 and seed crystal 26 as in Example 1 were used. However, in Comparative Example 1, no reflector is provided in the manufacturing apparatus. First, the seed crystal was brought into contact with the melt of the single crystal raw material. And, the rotation speed is 19 rpm and the pulling speed is 1.5 mm.
The seed crystal was pulled up for every hour, and the diameter of the single crystal was increased by gradually lowering the temperature of the melt of the single crystal raw material at the shoulder. Also, the diameter of the single crystal is 55
The single crystal was grown to have a weight gain of 30.2 g / hour. Thereafter, the straight body portion of the single crystal was pulled for 30 hours, the single crystal was separated from the melt of the single crystal raw material, and gradually cooled. The pulled single crystal is
It has a hexagonal prism shape, and the maximum diameter of the straight body is 60.
At 0 mm, the minimum value was 52.0 mm.
【００１１】上述のように、反射板を設けていない比較
例１では、６角柱状の単結晶が製造されてしまうが、反
射板を設けた実施例１では、円柱に近い角柱状の単結晶
を製造することができた。そのため、実施例１によれ
ば、製造された単結晶から円板状のウエハを採取する際
に効率がよい。また、実施例２では、６角形の２つの角
が取れた長方形に近い形状の単結晶を製造することがで
きた。As described above, in Comparative Example 1 in which the reflector is not provided, a hexagonal columnar single crystal is produced, but in Example 1 in which the reflector is provided, the columnar single crystal close to the column is formed. Could be manufactured. Therefore, according to Example 1, the efficiency is high when a disk-shaped wafer is sampled from the manufactured single crystal. In addition, in Example 2, a single crystal having a shape close to a rectangle in which two corners of a hexagon were removed could be manufactured.
【００１２】なお、上述の実施例１では６枚の反射板が
放射状に配置されているが、この発明では、反射板は、
製造される単結晶の径方向への成長を抑えたい方位に対
応させて配置されればよい。このように単結晶の径方向
の成長を抑えるために単結晶の上部の放熱を抑えるに
は、１枚または複数枚の反射板を単結晶の上部の円錐部
に向けて配置し、単結晶引上げ軸自体に反射板を保持す
る機構を設けて、この機構で反射板を保持し、単結晶と
共に反射板を回転すればよい。たとえば、図４に示すよ
うに、２枚の反射板３０が、単結晶の上部の円錐部に対
向するように、２つの支持部材２８を介して単結晶引上
げ軸２２に取り付けられてもよい。また、反射板は、単
結晶の側面部からの放熱も抑えるために、単結晶の半径
方向の外側にまで達して、単結晶の側面に対向している
ことが好ましい。In the first embodiment, the six reflectors are arranged radially, but in the present invention, the reflectors are
It may be arranged so as to correspond to the direction in which it is desired to suppress the growth of the manufactured single crystal in the radial direction. In order to suppress the heat radiation of the upper part of the single crystal in order to suppress the radial growth of the single crystal as described above, one or more reflectors are arranged toward the conical part of the upper part of the single crystal and the single crystal is pulled up. It suffices to provide a mechanism for holding the reflector on the shaft itself, hold the reflector by this mechanism, and rotate the reflector together with the single crystal. For example, as shown in FIG. 4, the two reflectors 30 may be attached to the single crystal pulling shaft 22 via the two supporting members 28 so as to face the upper conical portion of the single crystal. Further, in order to suppress heat radiation from the side surface portion of the single crystal, it is preferable that the reflection plate reach the outer side in the radial direction of the single crystal and face the side surface of the single crystal.
【００１３】[0013]
【発明の効果】この発明によれば、チョクラルスキー法
による単結晶の製造において、所望のウエハ断面形状を
持つ単結晶を製造することができる。According to the present invention, in the production of a single crystal by the Czochralski method, a single crystal having a desired wafer sectional shape can be produced.
【図１】この発明にかかる単結晶の製造装置の一例を示
す図解図である。FIG. 1 is an illustrative view showing an example of an apparatus for producing a single crystal according to the present invention.
【図２】図１に示す単結晶の製造装置に用いられる反射
板を示す図解図である。FIG. 2 is an illustrative view showing a reflector used in the apparatus for producing a single crystal shown in FIG.
【図３】図２に示す反射板の平面図である。FIG. 3 is a plan view of the reflector shown in FIG.
【図４】この発明にかかる単結晶の製造装置に用いられ
る反射板の他の例を示す図解図である。FIG. 4 is an illustrative view showing another example of the reflector used in the single crystal manufacturing apparatus according to the present invention.
【図５】図４に示す反射板の平面図である。5 is a plan view of the reflector shown in FIG. 4. FIG.
【図６】図４および図５に示す反射板を用いた単結晶の
製造装置で製造された単結晶を示す断面図解図である。6 is a schematic sectional view showing a single crystal manufactured by the single crystal manufacturing apparatus using the reflector shown in FIGS. 4 and 5. FIG.
【図７】反射板のさらに他の例を示す斜視図である。FIG. 7 is a perspective view showing still another example of the reflection plate.
１０ 単結晶の製造装置 １２ チャンバー １４ 高周波誘導コイル １６ ホットゾーン １８ 坩堝 ２０ 単結晶原料 ２２ 単結晶引上げ軸 ２４ 種結晶保持具 ２６ 種結晶 ２８ 支持部材 ３０ 反射板 10 Single crystal manufacturing equipment 12 chambers 14 High frequency induction coil 16 hot zones 18 crucible 20 Single crystal raw material 22 Single crystal pulling shaft 24 seed crystal holder 26 seed crystals 28 Support member 30 reflector
Claims (6)
装置において、 反射板が、単結晶と同期して回転するように、単結晶の
上部にかつ単結晶引上げ軸の周方向であって単結晶から
の放熱が抑制される位置に部分的に配置されていること
を特徴とする、単結晶の製造装置。1. An apparatus for producing a single crystal by the Czochralski method, wherein the reflecting plate is above the single crystal and in the circumferential direction of the single crystal pulling axis so that the reflecting plate rotates in synchronization with the single crystal. An apparatus for producing a single crystal, characterized in that it is partially arranged at a position where heat radiation from the is suppressed.
られている、請求項１に記載の単結晶の製造装置。2. The single crystal manufacturing apparatus according to claim 1, wherein the reflector is provided on the single crystal pulling shaft.
または請求項２に記載の単結晶の製造装置。3. The reflector is made of a noble metal.
Alternatively, the apparatus for producing a single crystal according to claim 2.
載の単結晶の製造装置を用いて単結晶を製造する、単結
晶の製造方法。4. A method for producing a single crystal, which comprises using the apparatus for producing a single crystal according to claim 1.
記載の単結晶の製造方法。5. The method for producing a single crystal according to claim 4, wherein the single crystal is an oxide.
晶である、請求項４に記載の単結晶の製造方法。6. The method for producing a single crystal according to claim 4, wherein the single crystal is a La 3 Ga 5 SiO 14 single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001324487A JP2003128496A (en) | 2001-10-23 | 2001-10-23 | Method for producing and apparatus for producing single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001324487A JP2003128496A (en) | 2001-10-23 | 2001-10-23 | Method for producing and apparatus for producing single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003128496A true JP2003128496A (en) | 2003-05-08 |
Family
ID=19141208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001324487A Pending JP2003128496A (en) | 2001-10-23 | 2001-10-23 | Method for producing and apparatus for producing single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003128496A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010120789A (en) * | 2008-11-18 | 2010-06-03 | Shin Etsu Handotai Co Ltd | Method for producing silicon single crystal |
| WO2012090951A1 (en) * | 2010-12-27 | 2012-07-05 | 住友金属工業株式会社 | DEVICE FOR PRODUCING SiC SINGLE CRYSTALS, JIG USED IN SAID PRODUCTION DEVICE, AND METHOD OF PRODUCING SiC SINGLE CRYSTALS |
| CN107604432A (en) * | 2017-10-30 | 2018-01-19 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field structure of EFG technique large scale gallium oxide single crystal grower |
-
2001
- 2001-10-23 JP JP2001324487A patent/JP2003128496A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010120789A (en) * | 2008-11-18 | 2010-06-03 | Shin Etsu Handotai Co Ltd | Method for producing silicon single crystal |
| WO2012090951A1 (en) * | 2010-12-27 | 2012-07-05 | 住友金属工業株式会社 | DEVICE FOR PRODUCING SiC SINGLE CRYSTALS, JIG USED IN SAID PRODUCTION DEVICE, AND METHOD OF PRODUCING SiC SINGLE CRYSTALS |
| CN107604432A (en) * | 2017-10-30 | 2018-01-19 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field structure of EFG technique large scale gallium oxide single crystal grower |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120118228A1 (en) | Sapphire ingot grower | |
| CN213866492U (en) | Device for preparing high-quality and large-size silicon carbide single crystal | |
| US8597756B2 (en) | Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer | |
| CN101445954A (en) | Method for controlling temperature gradient and thermal history of a crystal-melt interface in growth process of czochralski silicon monocrystal | |
| JPH10101482A (en) | Production unit for single crystal silicon and its production | |
| JP2011195414A (en) | Method for growing single crystal silicon having square cross section and silicon wafer having square section | |
| JPH0769775A (en) | Method and device for producing rod or ingot from semiconductor material expanded by crystallization of melt produced from granular substance upon solidification | |
| WO2014129414A1 (en) | Sapphire single crystal core and production method therefor | |
| JP2019147698A (en) | Apparatus and method for growing crystal | |
| JP2003128496A (en) | Method for producing and apparatus for producing single crystal | |
| JP2004224663A (en) | Apparatus for growing single crystal | |
| JP2003286024A (en) | Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering | |
| JPH09328394A (en) | Production of oxide single crystal | |
| CN110306238A (en) | A kind of crystal growing apparatus and growing method | |
| CN114875478A (en) | Heater and single crystal furnace | |
| JPH0733587A (en) | Production of single crystal and apparatus for pulling up single crystal | |
| JP2010265150A (en) | Method for producing sapphire single crystal and method for producing seed crystal | |
| JP6593157B2 (en) | Method for growing lithium tantalate single crystals | |
| JP2000327487A (en) | Method and apparatus for producing crystalline silicon | |
| CN217869174U (en) | Silicon carbide crystal growth furnace with uniform crystal thickness | |
| JP2004099390A (en) | Method of manufacturing compound semiconductor single crystal and compound semiconductor single crystal | |
| JP3079991B2 (en) | Single crystal manufacturing apparatus and manufacturing method | |
| CN219032461U (en) | Crucible for silicon carbide single crystal growth and silicon carbide single crystal growth system | |
| JP7106978B2 (en) | CRYSTAL GROWING APPARATUS AND SINGLE CRYSTAL MANUFACTURING METHOD | |
| JPH11274537A (en) | Manufacture of polycrystalline silicon of large grain size |