JP2003124574A - 光半導体装置及びその製造方法 - Google Patents

光半導体装置及びその製造方法

Info

Publication number
JP2003124574A
JP2003124574A JP2001311046A JP2001311046A JP2003124574A JP 2003124574 A JP2003124574 A JP 2003124574A JP 2001311046 A JP2001311046 A JP 2001311046A JP 2001311046 A JP2001311046 A JP 2001311046A JP 2003124574 A JP2003124574 A JP 2003124574A
Authority
JP
Japan
Prior art keywords
quantum dots
layer
semiconductor device
optical semiconductor
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001311046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003124574A5 (enExample
Inventor
Tomoyuki Akiyama
知之 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2001311046A priority Critical patent/JP2003124574A/ja
Priority to US10/102,797 priority patent/US6639240B2/en
Priority to EP02252247A priority patent/EP1302810B1/en
Priority to DE60223772T priority patent/DE60223772T2/de
Publication of JP2003124574A publication Critical patent/JP2003124574A/ja
Publication of JP2003124574A5 publication Critical patent/JP2003124574A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2215—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides using native oxidation of semiconductor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2001311046A 2001-10-09 2001-10-09 光半導体装置及びその製造方法 Pending JP2003124574A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001311046A JP2003124574A (ja) 2001-10-09 2001-10-09 光半導体装置及びその製造方法
US10/102,797 US6639240B2 (en) 2001-10-09 2002-03-22 Photosemiconductor device and method for fabricating the same
EP02252247A EP1302810B1 (en) 2001-10-09 2002-03-27 Photosemiconductor device and method for fabricating the same
DE60223772T DE60223772T2 (de) 2001-10-09 2002-03-27 Photohalbleitervorrichtung und Herstellungsverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001311046A JP2003124574A (ja) 2001-10-09 2001-10-09 光半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003124574A true JP2003124574A (ja) 2003-04-25
JP2003124574A5 JP2003124574A5 (enExample) 2005-06-16

Family

ID=19129937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001311046A Pending JP2003124574A (ja) 2001-10-09 2001-10-09 光半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US6639240B2 (enExample)
EP (1) EP1302810B1 (enExample)
JP (1) JP2003124574A (enExample)
DE (1) DE60223772T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1976076A2 (en) 2007-03-28 2008-10-01 Fujitsu Ltd. Quantum dot semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071218A1 (en) * 2002-12-16 2006-04-06 Japan Science And Technology Agency Semiconductior multilayer structurehaving inhomogeneous quantum dots, light-emitting diode using same, semiconductor laser diode, semiconductor optical amplifier, and method for manufacturing them
US8349712B2 (en) 2011-03-30 2013-01-08 Technische Universitat Berlin Layer assembly
DE102011078176A1 (de) 2011-06-28 2013-01-03 Technische Universität Berlin Elektrooptisches bauelement
WO2019154475A1 (fr) 2018-02-06 2019-08-15 Jodon De Villeroche Gerard Alain Jacques Marie Système de portage de caméras et leurs écrans fixes sur des attaches au rétroviseur intérieur ou autres emplacements
CN114389150B (zh) * 2020-10-05 2025-12-26 新科实业有限公司 光源单元、热辅助磁头、头万向节总成和硬盘驱动器
JP7543862B2 (ja) * 2020-11-13 2024-09-03 株式会社デンソー 半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
JPH0817264B2 (ja) 1992-12-24 1996-02-21 松下電器産業株式会社 量子箱及び量子細線の作製方法並びにそれを用いた半導体光増幅素子
US5936258A (en) 1995-04-28 1999-08-10 Fujitsu Limited Optical semiconductor memory device and read/write method therefor
JPH0982900A (ja) 1995-09-13 1997-03-28 Fujitsu Ltd 光半導体記憶装置、その情報書き込み方法及び情報読み出し方法、並びに光半導体論理回路装置
US5932309A (en) * 1995-09-28 1999-08-03 Alliedsignal Inc. Colored articles and compositions and methods for their fabrication
KR100276697B1 (ko) * 1997-12-23 2001-02-01 정선종 핫-일렉트론 포토트랜지스터
KR100294691B1 (ko) * 1998-06-29 2001-07-12 김영환 다중층양자점을이용한메모리소자및제조방법
US6445009B1 (en) * 2000-08-08 2002-09-03 Centre National De La Recherche Scientifique Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1976076A2 (en) 2007-03-28 2008-10-01 Fujitsu Ltd. Quantum dot semiconductor device
US7829880B2 (en) 2007-03-28 2010-11-09 Fujitsu Limited Quantum dot semiconductor device

Also Published As

Publication number Publication date
EP1302810A3 (en) 2005-03-09
US20030066997A1 (en) 2003-04-10
DE60223772T2 (de) 2008-10-30
US6639240B2 (en) 2003-10-28
EP1302810B1 (en) 2007-11-28
DE60223772D1 (de) 2008-01-10
EP1302810A2 (en) 2003-04-16

Similar Documents

Publication Publication Date Title
US6219366B1 (en) Semiconductor optical device and method of manufacturing the same
JP3672678B2 (ja) 量子半導体装置およびその製造方法
JP4526252B2 (ja) 光半導体装置及びその製造方法
US8273585B2 (en) Optical semiconductor device and method for manufacturing the same
JPH07235732A (ja) 半導体レーザ
JP3189791B2 (ja) 半導体レーザ
JP3052552B2 (ja) 面発光型半導体レーザ
JP4345483B2 (ja) 量子ナノ構造半導体レーザ
JP2010232424A (ja) 半導体光増幅装置及び光モジュール
US20070013996A1 (en) Quantum dot vertical lasing semiconductor optical amplifier
EP0544439B1 (en) Article comprising a strained layer quantum well laser
JPH08195525A (ja) 半導体レーザ
JPWO2009116153A1 (ja) 半導体発光素子及びその製造方法
EP1302810B1 (en) Photosemiconductor device and method for fabricating the same
JP2882335B2 (ja) 光半導体装置およびその製造方法
US7288783B2 (en) Optical semiconductor device and method for fabricating the same
JP4652712B2 (ja) 半導体装置
JP4345673B2 (ja) 半導体レーザ
US6980577B1 (en) Vertical laser cavity with a non-planar top mirror
JPH04350988A (ja) 量子井戸構造発光素子
JP2565909B2 (ja) 半導体レ−ザ素子
JP3033333B2 (ja) 半導体レーザ素子
JP2005243720A5 (enExample)
JP2005243720A (ja) 半導体発光装置
JPH07183617A (ja) 量子井戸構造半導体素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040910

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040910

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060530

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060728

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060912