JP2003100971A - Package for housing semiconductor chip and semiconductor device - Google Patents

Package for housing semiconductor chip and semiconductor device

Info

Publication number
JP2003100971A
JP2003100971A JP2001293028A JP2001293028A JP2003100971A JP 2003100971 A JP2003100971 A JP 2003100971A JP 2001293028 A JP2001293028 A JP 2001293028A JP 2001293028 A JP2001293028 A JP 2001293028A JP 2003100971 A JP2003100971 A JP 2003100971A
Authority
JP
Japan
Prior art keywords
thermoelectric cooling
cooling element
input
wiring layer
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001293028A
Other languages
Japanese (ja)
Inventor
Koichi Kashiwagi
弘一 柏木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001293028A priority Critical patent/JP2003100971A/en
Publication of JP2003100971A publication Critical patent/JP2003100971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To normally and stably operate a thermoelectric cooling element and a semiconductor chip housed in a semiconductor package for a long time by improving the structure of connection between an input/output terminal and the thermoelectric cooling element through lead wires. SOLUTION: In the semiconductor package, the thermoelectric cooling element 11 placed therein is electrically connected with the metalized wiring layer 4a of the input/output terminal 4 through the lead wires 14. The input/output terminal 4a wherein the metalized wiring layer 4a to be connected with the lead wires 14 is formed are so constituted that the portion of the input/output terminal 4 positioned in a frame body 3 is formed as a protruded portion 4b which protrudes inward from the frame body 3. The side face of the protruded portion 4b on the side of the thermoelectric cooling element 11 is inclined and gradually lowered toward the thermoelectric cooling element 11. Further, the protruded portion is so formed that the metalized wiring layer 4a is extended from the side face thereof.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージに関し、特に半
導体素子が載置される熱電冷却素子の電極と入出力端子
との接続構造を改良したものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element accommodating package for accommodating semiconductor elements, and more particularly, to an improved connection structure between electrodes and input / output terminals of a thermoelectric cooling element on which the semiconductor element is mounted. Regarding

【０００２】[0002]

【従来の技術】従来、光通信分野で用いられたりマイク
ロ波帯、ミリ波帯等の高周波信号で作動する各種半導体
素子を収納する半導体素子収納用パッケージ（以下、半
導体パッケージという）は、半導体素子から発生する熱
を強制的に半導体素子を載置する基体へ移動させて半導
体素子を安定に作動させるためのペルチェ素子等の熱電
冷却素子を具備している。例えば、半導体素子として半
導体レーザ（ＬＤ）、フォトダイオード（ＰＤ）等の光
半導体素子を用い、熱電冷却素子としてペルチェ素子を
設置した半導体パッケージを図３に断面図で、図４に斜
視図で示す。これらの図において、２１は基体、２３は
枠体、２４は入出力端子、３１は熱電冷却素子、３４は
リード線である。2. Description of the Related Art Conventionally, a semiconductor element housing package (hereinafter referred to as a semiconductor package) for housing various semiconductor elements used in the field of optical communication or operating with high frequency signals such as microwave band and millimeter wave band is a semiconductor device. A thermoelectric cooling element, such as a Peltier element, is provided for forcibly moving the heat generated from the substrate to the substrate on which the semiconductor element is mounted to operate the semiconductor element in a stable manner. For example, a semiconductor package in which an optical semiconductor element such as a semiconductor laser (LD) or a photodiode (PD) is used as a semiconductor element and a Peltier element is installed as a thermoelectric cooling element is shown in a sectional view in FIG. 3 and a perspective view in FIG. . In these figures, 21 is a base, 23 is a frame, 24 is an input / output terminal, 31 is a thermoelectric cooling element, and 34 is a lead wire.

【０００３】基体２１は、鉄（Ｆｅ）−ニッケル（Ｎ
ｉ）−コバルト（Ｃｏ）合金等の金属や銅（Ｃｕ）−タ
ングステン（Ｗ）等の焼結材から成り、その上側主面の
略中央部には、ＬＤ，ＰＤ等の光半導体素子などの半導
体素子３０を搭載するための熱電冷却素子３１を載置す
る載置部２１ａが設けられている。載置部２１ａには、
半導体素子３０が、熱電冷却素子３１に搭載された状態
で載置固定される。The base 21 is made of iron (Fe) -nickel (N
i) -Cobalt (Co) alloy or other metal or copper (Cu) -Tungsten (W) or other sintered material. A mounting portion 21a on which the thermoelectric cooling element 31 for mounting the semiconductor element 30 is mounted is provided. In the mounting portion 21a,
The semiconductor element 30 is mounted and fixed in a state of being mounted on the thermoelectric cooling element 31.

【０００４】基体２１の上側主面の外周部には、載置部
２１ａを囲繞するようにして接合され、側部に光ファイ
バ３２を固定するための筒状の光ファイバ固定部材２２
の取付部および入出力端子２４の取付部２３ａを有する
枠体２３が立設されており、枠体２３は基体２１ととも
にその内側に半導体素子３０を収容する空所を形成す
る。A cylindrical optical fiber fixing member 22 is joined to the outer peripheral portion of the upper main surface of the base body 21 so as to surround the mounting portion 21a and fixes the optical fiber 32 to the side portion.
A frame body 23 having a mounting portion of (1) and a mounting portion 23a of the input / output terminal 24 is provided upright, and the frame body 23 forms a space inside the base body 21 for housing the semiconductor element 30 therein.

【０００５】光ファイバ固定部材２２は、枠体２３内側
の端部がサファイアやガラス等の透光性材料から成る窓
部材２２ａで塞がれており、枠体２３外側の端部から光
ファイバ３２が挿通固定される。The optical fiber fixing member 22 has an end inside the frame 23 closed by a window member 22a made of a translucent material such as sapphire or glass, and the optical fiber 32 extends from the end outside the frame 23. Is inserted and fixed.

【０００６】枠体２３は基体２１と同様にＦｅ−Ｎｉ−
Ｃｏ合金やＣｕ−Ｗの焼結材等から成り、基体２１と一
体成形される、または基体２１に銀（Ａｇ）ろう等のろ
う材を介してろう付けされる、またはシーム溶接法等の
溶接法により接合されることによって、基体２１の上側
主面の外周部に立設される。The frame 23 is made of Fe--Ni--, like the substrate 21.
It is made of a sintered material such as a Co alloy or Cu-W and is integrally molded with the base 21, or is brazed to the base 21 via a brazing material such as silver (Ag) braze, or welding such as seam welding. By being joined by the method, it is erected on the outer peripheral portion of the upper main surface of the base 21.

【０００７】入出力端子２４は、アルミナ（Ａｌ
2Ｏ3），窒化アルミニウム（ＡｌＮ），ムライト（３Ａ
ｌ2Ｏ3・２ＳｉＯ2）等のセラミックスから成り、枠体
２３の取付部２３ａにろう材を介して嵌着接合され、枠
体２３の内外を電気的に導通する複数のメタライズ配線
層２４ａが被着形成されている。The input / output terminal 24 is made of alumina (Al
2 O 3 ), aluminum nitride (AlN), mullite (3A
a plurality of metallized wiring layers 24a which are made of ceramics such as 1 2 O 3 · 2SiO 2 ) and which are fitted and joined to the mounting portion 23a of the frame body 23 through a brazing material and electrically conduct the inside and outside of the frame body 23. It is adhered and formed.

【０００８】メタライズ配線層２４ａの枠体２３外側の
部位には、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属から成る外部
リード端子２７がＡｇろう等のろう材を介して取着さ
れ、一方メタライズ配線層２４ａの枠体２３内側の部位
には、半導体素子３０の各電極がボンディングワイヤ３
３を介して電気的に接続されるとともにリード線３４の
先端部が半田付けされ電気的に接続される。メタライズ
配線層２４ａのリード線３４の接続部は、入出力端子２
４のメタライズ配線層２４ａの導出方向に略垂直な側面
で枠体２３内側の側面に、断面が略Ｕ字状の切欠き部が
設けられるとともに、この切欠き部の内面にメタライズ
配線層２４ａが延設されて成る。これにより、切欠き部
の内面とリード線３４との間の半田の接合面積が拡大
し、入出力端子２４とリード線３４との接続が強固なも
のになる。External lead terminals 27 made of a metal such as Fe--Ni--Co alloy are attached to a portion of the metallized wiring layer 24a outside the frame body 23 through a brazing material such as Ag braze, while the metallized wiring layer is formed. Each electrode of the semiconductor element 30 is bonded to the bonding wire 3 at a portion inside the frame 23 of 24a.
The lead wires 34 are electrically connected to each other via 3 and soldered to be electrically connected. The connecting portion of the lead wire 34 of the metallized wiring layer 24a is connected to the input / output terminal 2
The metallized wiring layer 24a is provided with a notch having a substantially U-shaped cross section on a side surface inside the frame body 23 which is a side surface substantially perpendicular to the metallized wiring layer 24a. It will be extended. As a result, the solder joint area between the inner surface of the cutout portion and the lead wire 34 is increased, and the connection between the input / output terminal 24 and the lead wire 34 is strengthened.

【０００９】枠体２３および入出力端子２４の上面に
は、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属から成るシールリン
グ２５がＡｇろう等のろう材を介して接合され、シール
リング２５の上面には、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属
から成る蓋体２６がろう付け法やシームウエルド法等の
溶接法で接合され、基体２１、枠体２３、シールリング
２５および蓋体２６から成る容器内部に半導体素子３０
を収容し気密に封止する。A seal ring 25 made of a metal such as Fe-Ni-Co alloy is joined to the upper surfaces of the frame body 23 and the input / output terminal 24 through a brazing material such as Ag braze, and the upper surface of the seal ring 25 is joined to the upper surface. A lid body 26 made of a metal such as Fe, Ni-Co alloy or the like is joined by a welding method such as a brazing method or a seam weld method, and is placed inside a container made up of a base body 21, a frame body 23, a seal ring 25 and a lid body 26. Semiconductor device 30
And hermetically sealed.

【００１０】最後に、枠体２３に設けた光ファイバ固定
部材２２に光ファイバ３２を溶接等によって接合させ、
光ファイバ３２を枠体２３に固定することによって製品
としての光半導体装置となる。Finally, the optical fiber 32 is joined to the optical fiber fixing member 22 provided on the frame 23 by welding or the like,
By fixing the optical fiber 32 to the frame 23, an optical semiconductor device as a product is obtained.

【００１１】光ファイバ３２は、その外側端部に金属製
フランジ３２ａを予め取着させておき、金属製フランジ
３２ａを例えばレーザ溶接法を採用して光ファイバ固定
部材２２に溶接する。A metal flange 32a is attached to the outer end of the optical fiber 32 in advance, and the metal flange 32a is welded to the optical fiber fixing member 22 by using, for example, a laser welding method.

【００１２】この半導体装置は、外部電気回路（図示せ
ず）から供給される電気信号によって半導体素子３０に
光を励起させ、この光を光ファイバ３２を介して外部に
伝送することによって高速光通信等に使用される半導体
装置として機能する。または、外部から光ファイバ３２
を介して伝送してくる光信号を、透光性部材２２ａを透
過させ、半導体素子３０に受光させて光信号を電気信号
に変換することによって、高速光通信等に使用される半
導体装置として機能する。This semiconductor device excites light in the semiconductor element 30 by an electric signal supplied from an external electric circuit (not shown), and transmits this light to the outside through an optical fiber 32, thereby performing high-speed optical communication. It functions as a semiconductor device used for the above. Or the optical fiber 32 from the outside
A semiconductor device used for high-speed optical communication or the like functions by transmitting an optical signal transmitted through the transparent member 22a and allowing the semiconductor element 30 to receive the optical signal and convert the optical signal into an electric signal. To do.

【００１３】なお、この半導体装置には、半導体素子３
０が作動中に発生する熱を外部に良好に放熱するため
に、半導体素子３０と基体２１との間に熱電冷却素子３
１が配設されている。この熱電冷却素子３１には、セラ
ミック基板が、基体２１に接合される面と半導体素子３
０が搭載される面にそれぞれ設けてあり、熱電冷却素子
３１の基体２１に接合される面のセラミック基板の上面
に電極が形成されている。この電極にリード線３４の一
端部が接続されている。In this semiconductor device, the semiconductor element 3
In order to satisfactorily dissipate the heat generated during operation of 0 to the outside, the thermoelectric cooling element 3 is provided between the semiconductor element 30 and the base 21.
1 is provided. The thermoelectric cooling element 31 has a surface on which a ceramic substrate is bonded to the base 21 and the semiconductor element 3
Electrodes are formed on the upper surface of the ceramic substrate, which is provided on each surface on which 0 is mounted and which is bonded to the base 21 of the thermoelectric cooling element 31. One end of the lead wire 34 is connected to this electrode.

【００１４】そして、リード線３４の他端部が入出力端
子２４のメタライズ配線層２４ａに半田付けにより電気
的に接続され、外部リード端子２７、メタライズ配線層
２４ａおよびリード線３４を介して外部より熱電冷却素
子３１に電力が供給される。即ち、リード線３４は、熱
電冷却素子３１に駆動電圧を供給することによって、熱
電冷却素子３１を半導体素子３０から基体２１に熱を移
動させる熱ポンプとして作動させる。従って、半導体素
子３０の作動時に発生する熱は熱電冷却素子３１を介し
て基体２１に強制的に伝達され、基体２１から大気中に
放散され、その結果半導体素子３０が常に定温で安定し
て作動するものとなる。The other end of the lead wire 34 is electrically connected to the metallized wiring layer 24a of the input / output terminal 24 by soldering, and is externally connected via the external lead terminal 27, the metallized wiring layer 24a and the lead wire 34. Electric power is supplied to the thermoelectric cooling element 31. That is, the lead wire 34 operates the thermoelectric cooling element 31 as a heat pump that transfers heat from the semiconductor element 30 to the base 21 by supplying a driving voltage to the thermoelectric cooling element 31. Therefore, the heat generated during the operation of the semiconductor element 30 is forcibly transferred to the base 21 via the thermoelectric cooling element 31 and is dissipated from the base 21 into the atmosphere, and as a result, the semiconductor element 30 always operates stably at a constant temperature. It will be done.

【００１５】[0015]

【発明が解決しようとする課題】しかしながら、上記従
来の半導体パッケージでは、近時の半導体装置の小型化
に伴い、入出力端子２４に形成されたメタライズ配線層
２４ａの間隔が例えば約１ｍｍ以下と狭くなってきてい
ること、およびメタライズ配線層２４ａに熱電冷却素子
３１の電極に接続されたリード線３４を半田付けする作
業が一般に手作業で行われることから、リード線３４の
先端部をメタライズ配線層２４ａに半田付けする際に、
メタライズ配線層２４ａとリード線３４との間に形成さ
れる半田溜りの一部が、作業ばらつき等に起因する半田
過多により隣接するメタライズ配線層２４ａに接触して
半田ブリッジを起こす場合があった。その結果、熱電冷
却素子３１の電極に接続されたリード線３４が半田付け
されたメタライズ配線層２４ａと、これに隣接するメタ
ライズ配線層２４ａとが半田ブリッジにより電気的に短
絡して、熱電冷却素子３１や半導体素子３０を正常に作
動させることが不可能となるという問題点を有してい
た。However, in the above-mentioned conventional semiconductor package, the gap between the metallized wiring layers 24a formed on the input / output terminals 24 is narrowed to, for example, about 1 mm or less due to the recent miniaturization of semiconductor devices. Since the work of soldering the lead wire 34 connected to the electrode of the thermoelectric cooling element 31 to the metallized wiring layer 24a is generally performed by hand, the tip portion of the lead wire 34 is formed on the metallized wiring layer 24a. When soldering to 24a,
A part of the solder pool formed between the metallized wiring layer 24a and the lead wire 34 may come into contact with the adjacent metallized wiring layer 24a due to excess solder due to work variations and the like to cause a solder bridge. As a result, the metallized wiring layer 24a to which the lead wire 34 connected to the electrode of the thermoelectric cooling element 31 is soldered and the metallized wiring layer 24a adjacent thereto are electrically short-circuited by the solder bridge, and the thermoelectric cooling element is formed. There is a problem that it becomes impossible to operate the semiconductor device 31 and the semiconductor device 30 normally.

【００１６】また、入出力端子２４のメタライズ配線層
２４ａに熱電冷却素子３１のリード線３４を半田付けに
より接続する際、リード線３４の先端部をメタライズ配
線層２４ａとの接合部の位置に合わせるために、リード
線３４を折り曲げる必要がある。その結果、折り曲げた
部位においてリード線３４の強度が劣化して切れ易くな
り、熱電冷却素子３１とメタライズ配線層２４ａとの接
続信頼性が低下するという問題点を有していた。また、
リード線３４の折り曲げ作業も手作業で行なわれること
から作業効率が悪い。When the lead wire 34 of the thermoelectric cooling element 31 is connected to the metallized wiring layer 24a of the input / output terminal 24 by soldering, the tip of the lead wire 34 is aligned with the position of the joint with the metallized wiring layer 24a. Therefore, it is necessary to bend the lead wire 34. As a result, there is a problem in that the strength of the lead wire 34 is deteriorated and easily broken at the bent portion, and the connection reliability between the thermoelectric cooling element 31 and the metallized wiring layer 24a is reduced. Also,
Since the bending work of the lead wire 34 is also performed manually, the work efficiency is poor.

【００１７】さらに、リード線３４の先端部とメタライ
ズ配線層２４ａとを接続する際に、図３に示すように、
リード線３４を張り過ぎず、弛ませ過ぎないように適度
に撓ませることが重要であり、またその加減を調整する
のが困難であった。リード線３４を張り過ぎると、作業
中にリード線３４が切れたり、切れたリード線３４が入
出力端子２４の他のメタライズ配線層２４ａ等に接触す
ることがある。リード線３４を弛ませ過ぎると、接続後
に基体２１の上側主面、枠体２３の内面、入出力端子２
４の他のメタライズ配線層２４ａ、半導体素子３０、ボ
ンディングワイヤ３３等に接触して電気的に短絡してし
まい、熱電冷却素子３１や半導体素子３０を正常に作動
させることができなくなるという問題点を有していた。Further, when connecting the leading end of the lead wire 34 and the metallized wiring layer 24a, as shown in FIG.
It is important that the lead wire 34 is appropriately bent so as not to be overtightened and loosened, and it is difficult to adjust the degree of adjustment. If the lead wire 34 is stretched too much, the lead wire 34 may break during the work, or the broken lead wire 34 may come into contact with another metallized wiring layer 24 a of the input / output terminal 24. If the lead wire 34 is loosened too much, after connection, the upper main surface of the base body 21, the inner surface of the frame body 23, the input / output terminal 2
4 is in contact with the other metallized wiring layer 24a, the semiconductor element 30, the bonding wire 33, etc., and electrically short-circuited, so that the thermoelectric cooling element 31 and the semiconductor element 30 cannot operate normally. Had.

【００１８】従って、本発明は上記問題点に鑑み完成さ
れたものであり、その目的は、入出力端子と熱電冷却素
子のリード線との接続作業を作業性よく効率的に確実に
行なうことができ、その結果内部に収容する熱電冷却素
子および半導体素子を長期にわたり正常かつ安定に作動
させ得る半導体素子パッケージを提供することにある。Therefore, the present invention has been completed in view of the above problems, and an object thereof is to reliably and efficiently connect the input / output terminal and the lead wire of the thermoelectric cooling element with good workability. Accordingly, it is an object of the present invention to provide a semiconductor element package capable of operating the thermoelectric cooling element and the semiconductor element housed therein normally and stably for a long period of time.

【００１９】[0019]

【課題を解決するための手段】本発明の半導体素子収納
用パッケージは、上側主面に半導体素子が熱電冷却素子
を介して載置される載置部を有する基体と、該基体の前
記上側主面の外周部に前記載置部を囲繞するように接合
され、側部を貫通するかまたは該側部の上側を切り欠い
て成る入出力端子の取付部が形成された枠体と、前記取
付部に嵌着され、前記枠体の内外を電気的に導通するメ
タライズ配線層が形成された入出力端子とを具備して成
り、前記熱電冷却素子はリード線を介して前記メタライ
ズ配線層に電気的に接続されている半導体素子収納用パ
ッケージにおいて、前記リード線に接続される前記メタ
ライズ配線層が形成された前記入出力端子の枠体内側の
部位が前記枠体内側に突出した突出部とされており、該
突出部の前記熱電冷却素子側の側面が前記熱電冷却素子
に向かって漸次低くなるように傾斜しているとともに前
記側面に前記メタライズ配線層が延出するように形成さ
れていることを特徴とする。A package for housing a semiconductor element according to the present invention comprises a base body having a mounting portion on the upper main surface on which a semiconductor element is mounted via a thermoelectric cooling element, and the upper main body of the base body. A frame body which is joined to the outer peripheral portion of the surface so as to surround the mounting portion and which has a mounting portion for the input / output terminal formed by penetrating the side portion or by notching the upper side of the side portion, and the mounting. The thermoelectric cooling element is electrically connected to the metallized wiring layer via a lead wire. In the package for storing semiconductor elements that are electrically connected to each other, a portion inside the frame body of the input / output terminal in which the metallized wiring layer connected to the lead wire is formed is a protrusion protruding inside the frame body. And the thermoelectricity of the protrusion却素Ko side surface is characterized in that the metallized wiring layers are formed so as to extend to the side with is inclined to become gradually lower toward the thermoelectric cooling element.

【００２０】本発明の半導体パッケージによれば、リー
ド線に接続されるメタライズ配線層が形成された入出力
端子の枠体内側の部位が枠体内側に突出した突出部とさ
れており、突出部の熱電冷却素子側の側面が熱電冷却素
子に向かって漸次低くなるように傾斜しているとともに
側面にメタライズ配線層が延出するように形成されてい
ることによって、熱電冷却素子のリード線を傾斜面に当
接させるとともに傾斜面に沿って略直線状にのばしてメ
タライズ配線層に接続でき、リード線の接続作業の作業
性が向上する。また、リード線に大きな変形を与えるこ
となく接続が可能になるため、リード線に加わる応力の
緩和、接続部の信頼性の向上につながる。その結果、熱
電冷却素子を長期にわたって正常に作動させることがで
きる。According to the semiconductor package of the present invention, the portion inside the frame of the input / output terminal on which the metallized wiring layer connected to the lead wire is formed is the protrusion protruding toward the inside of the frame. Since the side surface of the thermoelectric cooling element side is inclined so as to gradually lower toward the thermoelectric cooling element and the metallized wiring layer is formed to extend to the side surface, the lead wire of the thermoelectric cooling element is inclined. It can be connected to the metallized wiring layer while being brought into contact with the surface and extended substantially linearly along the inclined surface, and the workability of the lead wire connection work is improved. Further, since the connection can be made without giving a large deformation to the lead wire, the stress applied to the lead wire is relieved and the reliability of the connection portion is improved. As a result, the thermoelectric cooling element can be normally operated for a long period of time.

【００２１】本発明の半導体装置は、上記本発明の半導
体パッケージと、前記載置部に載置されるとともに前記
入出力端子に電気的に接続された半導体素子と、前記枠
体の上面に接合された蓋体とを具備したことを特徴とす
る。The semiconductor device of the present invention is formed by bonding the semiconductor package of the present invention, the semiconductor element mounted on the mounting portion and electrically connected to the input / output terminals, to the upper surface of the frame body. It is characterized by including the lid body.

【００２２】本発明は、上記の構成により、上記本発明
の半導体パッケージを用いた信頼性の高い半導体装置を
提供できる。The present invention can provide a highly reliable semiconductor device using the semiconductor package of the present invention having the above structure.

【００２３】[0023]

【発明の実施の形態】本発明の半導体パッケージについ
て以下に詳細に説明する。図１，図２は本発明の半導体
パッケージについて実施の形態の一例を示し、図１は半
導体パッケージの断面図、図２は半導体パッケージの斜
視図である。これらの図において、１は基体、３は枠
体、４は入出力端子、１１は熱電冷却素子、１４はリー
ド線である。BEST MODE FOR CARRYING OUT THE INVENTION The semiconductor package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of a semiconductor package of the present invention, FIG. 1 is a sectional view of the semiconductor package, and FIG. 2 is a perspective view of the semiconductor package. In these figures, 1 is a base, 3 is a frame, 4 is an input / output terminal, 11 is a thermoelectric cooling element, and 14 is a lead wire.

【００２４】本発明の基体１は、Ｆｅ−Ｎｉ−Ｃｏ合金
等の金属やＣｕ−Ｗの焼結材等から成り、そのインゴッ
トに圧延加工や打ち抜き加工等の従来周知の金属加工
法、または射出成形と切削加工等を施すことによって、
所定の形状に製作される。この基体１の上側主面には、
ＬＤ，ＰＤ等の光半導体素子等の半導体素子１０を搭載
して成るペルチェ素子等の熱電冷却素子１１を載置する
載置部１ａが設けられる。載置部１ａには、半導体素子
１０が熱電冷却素子１１に搭載された状態で載置固定さ
れる。The substrate 1 of the present invention is made of a metal such as an Fe-Ni-Co alloy or a sintered material of Cu-W, and its ingot is subjected to a conventionally known metal working method such as rolling or punching, or injection. By performing molding and cutting, etc.,
It is manufactured into a predetermined shape. On the upper main surface of the base 1,
A mounting portion 1a is provided on which a thermoelectric cooling element 11 such as a Peltier element formed by mounting a semiconductor element 10 such as an optical semiconductor element such as an LD or PD is mounted. The semiconductor element 10 is mounted and fixed on the mounting portion 1 a while being mounted on the thermoelectric cooling element 11.

【００２５】また、基体１の上側主面の外周部には載置
部１ａを囲繞するようにして接合されるとともに、側部
に光ファイバ１２を固定するための光ファイバ固定部材
２および入出力端子４の取付部３ａを有する枠体３が立
設されており、枠体３は基体１とともにその内側に半導
体素子１０を収容する空所を形成する。Further, the mounting portion 1a is joined to the outer peripheral portion of the upper main surface of the base body 1 so as to surround the mounting portion 1a, and the optical fiber fixing member 2 and the input / output for fixing the optical fiber 12 to the side portion. A frame 3 having a mounting portion 3a for the terminal 4 is provided upright, and the frame 3 forms a space inside the base 1 for accommodating the semiconductor element 10 therein.

【００２６】光ファイバ固定部材２は、Ｆｅ−Ｎｉ−Ｃ
ｏ合金等の金属から成る略円筒体等の筒状体であり、枠
体３内側に位置する端部がサファイアやガラス等の透光
性材料から成る窓部材２ａで塞がれており、枠体３外側
に位置する端部から光ファイバ１２が挿通固定される。
光ファイバ１２は、その端部に金属製フランジ１２ａを
予め取着させておき、金属製フランジ１２ａを例えばレ
ーザ溶接法で光ファイバ固定部材２に溶接することによ
り枠体３に固定される。これにより、光ファイバ１２を
介して内部に収容する半導体素子１０と外部との光信号
の授受が可能となる。The optical fiber fixing member 2 is made of Fe-Ni-C.
It is a tubular body such as a substantially cylindrical body made of a metal such as o alloy, and the end portion located inside the frame body 3 is closed by a window member 2a made of a translucent material such as sapphire or glass. The optical fiber 12 is inserted and fixed from the end located outside the body 3.
The optical fiber 12 is fixed to the frame body 3 by attaching a metal flange 12a to the end portion in advance and welding the metal flange 12a to the optical fiber fixing member 2 by, for example, a laser welding method. As a result, it becomes possible to exchange optical signals between the semiconductor element 10 housed inside and the outside via the optical fiber 12.

【００２７】枠体３は平面視形状が略長方形の枠状体で
あり、光ファイバ固定部材２および入出力端子４を支持
する作用を有する。また、基体１と同様にＦｅ−Ｎｉ−
Ｃｏ合金やＣｕ−Ｗの焼結材等から成り、基体１と一体
成形される、または基体１にＡｇろう等のろう材を介し
てろう付けされる、またはシーム溶接法等の溶接法によ
り接合されることによって、基体１の上側主面の外周部
に立設される。The frame body 3 is a frame-shaped body having a substantially rectangular shape in plan view, and has a function of supporting the optical fiber fixing member 2 and the input / output terminal 4. In addition, as with the substrate 1, Fe-Ni-
It is made of a sintered material such as a Co alloy or Cu-W and is integrally molded with the base body 1, is brazed to the base body 1 through a brazing material such as Ag braze, or is joined by a welding method such as a seam welding method. By doing so, it is erected on the outer peripheral portion of the upper main surface of the base 1.

【００２８】入出力端子４はＡｌ2Ｏ3，ＡｌＮ，３Ａｌ
2Ｏ3・２ＳｉＯ2等のセラミックスから成る断面が逆Ｔ
字型の部材であり、枠体３の取付部３ａに嵌め込まれる
とともに、入出力端子４と取付部３ａとの隙間に溶融し
たＡｇろう等のろう材を毛細管現象により充填させるこ
とで枠体３に嵌着接合される。入出力端子４には、枠体
３の内外を電気的に導通する複数のメタライズ配線層４
ａが被着形成されており、入出力端子４は枠体３の一部
となって枠体３の内外を気密に仕切るとともに、枠体３
の内外を導通させる導電路としての機能を有する。The input / output terminal 4 is made of Al 2 O 3 , AlN, 3Al.
Inverted T cross-section consisting of 2 O 3 · 2SiO 2 etc. Ceramics
The frame member 3 is a character-shaped member that is fitted into the mounting portion 3a of the frame body 3 and is filled with a brazing material such as molten Ag brazing material in the gap between the input / output terminal 4 and the mounting portion 3a by a capillary phenomenon. Is fitted and joined. The input / output terminal 4 includes a plurality of metallized wiring layers 4 that electrically connect the inside and the outside of the frame body 3.
a is adhered and formed, and the input / output terminal 4 becomes a part of the frame body 3 to partition the inside and outside of the frame body 3 in an airtight manner, and
Has a function as a conductive path for electrically connecting the inside and the outside.

【００２９】入出力端子４は、例えばＡｌ2Ｏ3から成る
場合、以下のようにして作製される。まず、Ａｌ2Ｏ3，
酸化珪素（ＳｉＯ2），酸化カルシウム（ＣａＯ），酸
化マグネシウム（ＭｇＯ）等の原料粉末に適当な有機バ
インダや可塑剤，分散剤，溶剤等を添加混合して泥漿状
となす。これを従来周知のドクターブレード法でシート
状となすことによって複数枚のセラミックグリーンシー
トを得る。しかる後、これらのセラミックグリーンシー
トに適当な打ち抜き加工を施しメタライズ配線層４ａと
なる金属ペーストを印刷塗布して積層する。最後に、こ
の積層体の枠体３および後述のシールリング５と接合さ
れる面に、メタライズ金属層となる金属ペーストを印刷
塗布し、還元雰囲気中で約１６００℃の温度で焼成する
ことによって製作される。When the input / output terminal 4 is made of Al 2 O 3 , for example, it is manufactured as follows. First, Al 2 O 3 ,
A raw material powder of silicon oxide (SiO 2 ), calcium oxide (CaO), magnesium oxide (MgO), etc. is mixed with an appropriate organic binder, a plasticizer, a dispersant, a solvent, etc. to form a slurry. A plurality of ceramic green sheets are obtained by forming this into a sheet shape by a conventionally known doctor blade method. Thereafter, these ceramic green sheets are subjected to appropriate punching processing, and a metal paste to be the metallized wiring layer 4a is printed and applied to be laminated. Finally, a metal paste to be a metallized metal layer is print-coated on the surface of the laminate, which is to be joined to the frame 3 and a seal ring 5 described later, and is baked at a temperature of about 1600 ° C. in a reducing atmosphere. To be done.

【００３０】なお、メタライズ配線層４ａおよびメタラ
イズ金属層となる金属ペーストは、Ｗ，モリブデン（Ｍ
ｏ），マンガン（Ｍｎ）等の高融点金属粉末に適当な有
機バインダや溶剤を添加混合してペースト状となしたも
のを従来周知のスクリーン印刷法を採用して印刷するこ
とにより、セラミックグリーンシートおよびその積層体
に印刷塗布される。The metal pastes for the metallized wiring layer 4a and the metallized metal layer are W, molybdenum (M
o), manganese (Mn) and other refractory metal powders are mixed with an appropriate organic binder or solvent to form a paste, which is then printed using a conventionally known screen printing method to obtain a ceramic green sheet. And printed on the laminate.

【００３１】メタライズ配線層４ａの枠体３外側の部位
には、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属から成る外部リー
ド端子７がＡｇろう等のろう材を介して取着され、一方
メタライズ配線層４ａの枠体３内側の部位には、半導体
素子１０の各電極がボンディングワイヤ１３を介して電
気的に接続されるとともに、熱電冷却素子１１のリード
線１４が電気的に接続される。External lead terminals 7 made of a metal such as an Fe--Ni--Co alloy are attached to a portion of the metallized wiring layer 4a outside the frame body 3 through a brazing material such as Ag brazing, while the metallized wiring layer is formed. Electrodes of the semiconductor element 10 are electrically connected to the inside of the frame 3 of 4a via bonding wires 13, and lead wires 14 of the thermoelectric cooling element 11 are electrically connected.

【００３２】入出力端子４は、熱電冷却素子１１のリー
ド線１４に接続されるメタライズ配線層４ａが形成され
た枠体３内側の部位が枠体３内側に突出した突出部４ｂ
とされており、突出部４ｂの熱電冷却素子１１側の側面
が熱電冷却素子１１に向かって漸次低くなるように傾斜
しているとともにその側面にメタライズ配線層４ａが延
出するように形成されている。平面的な傾斜面１５を形
成する場合はスライス加工等で傾斜面１５を形成し、そ
の傾斜面１５にメタライズ配線層４ａを形成して作製す
ることができる。また、入出力端子４のメタライズ配線
層４ａが形成される平板部が複数のセラミック層を積層
して成る場合、各セラミック層の積層の位置をずらして
階段状の傾斜面を形成し、傾斜面において、各セラミッ
ク層の主面に印刷したメタライズ配線層４ａと側面に形
成したメタライズ層とを接続して導通をとることによ
り、階段状の導通パターンを形成することもできる。The input / output terminal 4 has a protruding portion 4b in which a portion inside the frame 3 in which the metallized wiring layer 4a connected to the lead wire 14 of the thermoelectric cooling element 11 is formed protrudes inside the frame 3.
The side surface of the protruding portion 4b on the thermoelectric cooling element 11 side is inclined so as to gradually lower toward the thermoelectric cooling element 11, and the metallized wiring layer 4a is formed so as to extend on the side surface. There is. When the planar inclined surface 15 is formed, the inclined surface 15 may be formed by slicing, and the metallized wiring layer 4a may be formed on the inclined surface 15. Further, when the flat plate portion of the input / output terminal 4 on which the metallized wiring layer 4a is formed is formed by stacking a plurality of ceramic layers, the stacking position of each ceramic layer is shifted to form a step-like inclined surface, and the inclined surface is formed. In, the stepwise conductive pattern can be formed by connecting the metallized wiring layer 4a printed on the main surface of each ceramic layer and the metallized layer formed on the side surface to establish electrical connection.

【００３３】また、入出力端子４が上記の構成とされて
いることにより、Ｃｕ等から成るリード線１４を熱電冷
却素子１１から傾斜面１５の表面で略直線状にのばして
半田により接続することができ、リード線１４の接続が
容易となる。リード線１４を接続する際、傾斜面１５に
押し当て半田付けを行うが、傾斜面１５となっているこ
とにより、リード線１４が復元力を有するような適度の
角度で折り曲げられ、復元力により傾斜面１５に押し当
てられ当接することとなり、リード線１４が傾斜面１５
から浮き上がることを抑え、傾斜面１５に確実に接続さ
れる。Further, since the input / output terminal 4 is configured as described above, the lead wire 14 made of Cu or the like is extended from the thermoelectric cooling element 11 on the surface of the inclined surface 15 in a substantially straight line shape and connected by soldering. The lead wire 14 can be easily connected. When the lead wire 14 is connected, it is pressed against the inclined surface 15 for soldering. However, since the inclined surface 15 is formed, the lead wire 14 is bent at an appropriate angle so that the lead wire 14 has a restoring force. The lead wire 14 is pressed against the inclined surface 15 and comes into contact with the inclined surface 15.
It is prevented from rising from above and is securely connected to the inclined surface 15.

【００３４】傾斜面１５の傾斜の角度は５〜６０°が好
ましい。５°未満では、リード線１４を傾斜面１５に半
田付けする際、傾斜面１５の表面に合わせてピンセット
等で折り曲げるが、傾斜面１５が平面に近いため余分に
折り曲げてしまうことが多く、リード線１４の復元力が
不足して傾斜面１５から浮き上がり易くなる。その結果
接続時の作業性が低下し易くなったり、また傾斜面１５
の平面視形状が大きくなることで入出力端子４が大きく
なり、半導体パッケージの大型重量化につながり易くな
る。また、６０°を超えると、リード線１４を傾斜面１
５に半田付けする際、傾斜面１５の表面に合わせてピン
セット等で折り曲げるが、傾斜面１５の傾斜が急なた
め、リード線１４を復元力が失われる程に急角度で折り
曲げたり、折り曲げた部分の強度が劣化するといった問
題が発生し易くなり、接続時の作業性が低下し易くな
る。The angle of inclination of the inclined surface 15 is preferably 5 to 60 °. If the angle is less than 5 °, when the lead wire 14 is soldered to the inclined surface 15, it is bent with tweezers or the like in accordance with the surface of the inclined surface 15, but since the inclined surface 15 is close to a flat surface, it is often bent excessively. The restoring force of the line 14 is insufficient and the line 14 is easily lifted from the inclined surface 15. As a result, workability at the time of connection tends to be lowered, and the inclined surface 15
The larger the plan view shape becomes, the larger the input / output terminal 4 becomes, and the larger the weight of the semiconductor package is likely to be. Further, when the angle exceeds 60 °, the lead wire 14 is inclined to the inclined surface 1
When soldering to No. 5, it is bent with tweezers or the like according to the surface of the inclined surface 15. However, since the inclined surface 15 is steep, the lead wire 14 is bent or bent at such a steep angle that the restoring force is lost. The problem that the strength of the part is deteriorated easily occurs, and the workability at the time of connection is easily deteriorated.

【００３５】突出部４ｂの入出力端子４の長手方向の長
さＬ（図１）は２〜８ｍｍが好ましい。２ｍｍ未満で
は、突出部４ｂの傾斜面１５の部位が小さくなるため、
リード線１４を半田付けすることが困難になり、また半
田ブリッジによる電気的な短絡が発生し易くなる。８ｍ
ｍを超えると、半導体素子１０や熱電冷却素子１１を搭
載する部位が狭くなり、半導体素子１０や熱電冷却素子
１１の載置部１ａへの実装が困難になる。The length L (FIG. 1) of the protruding portion 4b in the longitudinal direction of the input / output terminal 4 is preferably 2 to 8 mm. If it is less than 2 mm, the portion of the inclined surface 15 of the protrusion 4b becomes small,
It becomes difficult to solder the lead wires 14, and an electrical short circuit due to a solder bridge is likely to occur. 8m
If it exceeds m, the portion where the semiconductor element 10 or the thermoelectric cooling element 11 is mounted becomes narrow, and it becomes difficult to mount the semiconductor element 10 or the thermoelectric cooling element 11 on the mounting portion 1a.

【００３６】また、リード線１４を傾斜面１５の表面で
直線状にのばすことによって、リード線１４は、枠体３
の内面、メタライズ配線層４ａ、半導体素子１０、ボン
ディングワイヤ１３等に接触して電気的に短絡すること
がなく、半導体素子１０や熱電冷却素子１１を正常に作
動させることが可能となる。Further, by extending the lead wire 14 linearly on the surface of the inclined surface 15, the lead wire 14 is fixed to the frame 3
It is possible to normally operate the semiconductor element 10 and the thermoelectric cooling element 11 without coming into contact with the inner surface, the metallized wiring layer 4a, the semiconductor element 10, the bonding wire 13 and the like to cause an electrical short circuit.

【００３７】図５に示すように、リード線１４の先端部
が傾斜面１５から突出部４ｂの上面に延びており、突出
部４ｂの上面に沿って接続されていてもよい。この場
合、２本のリード線１４が、突出部４ｂの上面と傾斜面
１５との間の稜線部をまたいで曲がる部位から先端側が
突起部を形成することになり、稜線部付近で半田が稜線
に沿って広がり易いのを防いで突起部付近に半田溜まり
を形成する。この半田溜りによってリード線１４間の電
気的な短絡を防止することができる。その結果、隣接し
たリード線１４同士およびメタライズ配線層４ａ同士を
完全に絶縁することができる。As shown in FIG. 5, the tip of the lead wire 14 may extend from the inclined surface 15 to the upper surface of the protruding portion 4b, and may be connected along the upper surface of the protruding portion 4b. In this case, the two lead wires 14 form a protrusion on the tip side from the portion where the two lead wires 14 bend over the ridge line portion between the upper surface of the protrusion 4b and the inclined surface 15, and the solder is ridge line near the ridge line portion. A solder pool is formed in the vicinity of the protrusion to prevent the solder from spreading easily along. This solder pool can prevent an electrical short circuit between the lead wires 14. As a result, the adjacent lead wires 14 and the metallized wiring layers 4a can be completely insulated.

【００３８】さらに、図２では入出力端子４の枠体３内
側の平面視形状が突出部４ｂを有することで略Ｌ字状に
なっているが、入出力端子４の枠体３内側の平面視形状
が略Ｕ字状となって対向する入出力端子４が突出部４ｂ
によってつながっていてもよい。また、半導体素子１０
や熱電冷却素子１１が搭載される部位に開口を有して対
向する入出力端子４がつながっているようにした、入出
力端子４の枠体３内側の平面視形状が略四角形の枠状で
あってもよい。Further, in FIG. 2, the planar view shape of the inside of the frame 3 of the input / output terminal 4 is substantially L-shaped by having the protruding portion 4b. The input / output terminals 4 facing each other in a substantially U-shape as viewed are the protruding portions 4b.
May be connected by. In addition, the semiconductor element 10
And the input / output terminals 4 facing each other having an opening at the site where the thermoelectric cooling element 11 is mounted are connected to each other. It may be.

【００３９】枠体３および入出力端子４の上面には、Ｆ
ｅ−Ｎｉ−Ｃｏ合金等の金属から成るシールリング５を
Ａｇろう等のろう材を介して接合し、シールリング５の
上面にＦｅ−Ｎｉ−Ｃｏ合金等の金属から成る蓋体６が
ろう付け法やシームウエルド法等の溶接法で接合され
る。基体１、枠体３、シールリング５および蓋体６から
成る容器内部に半導体素子１０を収容し気密に封止する
ことにより、製品としての半導体装置となる。On the upper surfaces of the frame 3 and the input / output terminal 4, F
A seal ring 5 made of a metal such as an e-Ni-Co alloy is joined via a brazing material such as Ag brazing, and a lid 6 made of a metal such as an Fe-Ni-Co alloy is brazed to the upper surface of the seal ring 5. And welding methods such as seam welding. A semiconductor device as a product is obtained by housing and hermetically sealing the semiconductor element 10 in a container composed of the base 1, the frame 3, the seal ring 5 and the lid 6.

【００４０】この半導体装置は、基体１が半田付けやネ
ジ止め等によって外部電気回路基板に実装され、外部リ
ード端子７と外部電気回路とを接続することにより、内
部に収容する半導体素子１０と熱電冷却素子１１が外部
電気回路に電気的に接続される。そして、半導体素子１
０が高周波信号で作動するとともに熱電冷却素子１１が
正常に作動し、半導体素子１０が作動時に発生する熱を
熱電冷却素子１１を介して基体１に強制的に伝達し、基
体１から大気中に放散することによって、半導体素子１
０の温度を常に定温として、半導体素子１０が常に安定
して作動する。In this semiconductor device, the substrate 1 is mounted on an external electric circuit board by soldering, screwing, or the like, and the external lead terminal 7 and the external electric circuit are connected to each other, so that the semiconductor element 10 and the thermoelectric element housed inside are electrically connected. The cooling element 11 is electrically connected to the external electric circuit. Then, the semiconductor element 1
0 operates with a high frequency signal, the thermoelectric cooling element 11 operates normally, and the heat generated when the semiconductor element 10 operates is forcibly transmitted to the base body 1 through the thermoelectric cooling element 11, and the base body 1 into the atmosphere. By dissipating, the semiconductor device 1
The temperature of 0 is always kept constant, and the semiconductor element 10 always operates stably.

【００４１】また、この半導体装置は、外部電気回路か
ら供給される電気信号によって半導体素子１０に光を励
起させ、この光を光ファイバ１２を介して外部に伝達す
ることによって高速光通信等に使用される半導体装置と
して機能する。もしくは、外部から光ファイバ１２を伝
送してくる光信号を、透光性部材２ａを透過させ、半導
体素子１０に受光させて光信号を電気信号に変換するこ
とによって、高速光通信等に使用される半導体装置とし
て機能する。Further, this semiconductor device is used for high-speed optical communication or the like by exciting light in the semiconductor element 10 by an electric signal supplied from an external electric circuit and transmitting this light to the outside through the optical fiber 12. Function as a semiconductor device. Alternatively, it is used for high-speed optical communication or the like by transmitting an optical signal transmitted from the outside from the optical fiber 12 through the transparent member 2a and causing the semiconductor element 10 to receive the optical signal to convert the optical signal into an electric signal. Function as a semiconductor device.

【００４２】なお、本発明は上記実施の形態に限定され
るものではなく、本発明の要旨を逸脱しない範囲内であ
れば種々の変更は可能である。上記実施の形態では、半
導体素子１０としてＬＤ，ＰＤ等の光半導体素子を収納
する半導体パッケージについて説明したが、半導体素子
１０はＩＣ，ＬＳＩ等の半導体集積回路素子であっても
よく、その場合光ファイバ固定部材２および光ファイバ
１２は不要となる。The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the present invention. In the above embodiment, the semiconductor package that accommodates the optical semiconductor element such as LD and PD as the semiconductor element 10 has been described, but the semiconductor element 10 may be a semiconductor integrated circuit element such as IC and LSI. The fiber fixing member 2 and the optical fiber 12 are unnecessary.

【００４３】[0043]

【発明の効果】本発明は、リード線に接続されるメタラ
イズ配線層が形成された入出力端子の枠体内側の部位が
枠体内側に突出した突出部とされており、突出部の熱電
冷却素子側の側面が熱電冷却素子に向かって漸次低くな
るように傾斜しているとともにその側面にメタライズ配
線層が延出するように形成されていることから、熱電冷
却素子のリード線を傾斜面に当接させるとともに傾斜面
に沿って略直線状にのばしてメタライズ配線層に接続で
き、リード線の接続作業の作業性が向上する。また、リ
ード線に大きな変形を与えることなく接続が可能になる
ため、リード線に加わる応力の緩和、接続部の信頼性の
向上につながる。その結果、熱電冷却素子を長期にわた
って正常かつ安定的に作動させることができる。According to the present invention, the inside of the frame of the input / output terminal on which the metallized wiring layer connected to the lead wire is formed is a protrusion protruding toward the inside of the frame, and the thermoelectric cooling of the protrusion is performed. Since the side surface on the element side is inclined so as to gradually lower toward the thermoelectric cooling element and the metallized wiring layer is formed so as to extend on the side surface, the lead wire of the thermoelectric cooling element is formed on the inclined surface. While being brought into contact with each other, they can be extended in a substantially straight line along the inclined surface to be connected to the metallized wiring layer, and the workability of the lead wire connection work is improved. Further, since the connection can be made without giving a large deformation to the lead wire, the stress applied to the lead wire is relieved and the reliability of the connection portion is improved. As a result, the thermoelectric cooling element can be operated normally and stably for a long period of time.

【００４４】本発明の半導体装置は、本発明の半導体パ
ッケージと、載置部に載置されるとともに入出力端子に
電気的に接続された半導体素子と、枠体の上面に接合さ
れた蓋体を具備したことにより、上記本発明の作用効果
を有する半導体パッケージを用いた信頼性の高い半導体
装置を提供できる。The semiconductor device of the present invention comprises a semiconductor package of the present invention, a semiconductor element mounted on the mounting portion and electrically connected to input / output terminals, and a lid body joined to the upper surface of the frame body. By including the above, it is possible to provide a highly reliable semiconductor device using the semiconductor package having the effects of the present invention.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の半導体パッケージについて実施の形態
の例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor package of the present invention.

【図２】図１の半導体パッケージの斜視図である。FIG. 2 is a perspective view of the semiconductor package of FIG.

【図３】従来の半導体パッケージの断面図である。FIG. 3 is a cross-sectional view of a conventional semiconductor package.

【図４】従来の半導体パッケージの斜視図である。FIG. 4 is a perspective view of a conventional semiconductor package.

【図５】本発明の半導体パッケージについて実施の形態
の他の例を示す要部拡大断面図である。FIG. 5 is an enlarged sectional view of an essential part showing another example of the embodiment of the semiconductor package of the present invention.

【符号の説明】[Explanation of symbols]

１：基体 １ａ：載置部 ３：枠体 ３ａ：取付部 ４：入出力端子 ４ａ：メタライズ配線層 ４ｂ：突出部 ６：蓋体 １０：半導体素子 １１：熱電冷却素子 １４：リード線 1: Base 1a: Placement part 3: frame 3a: Mounting part 4: Input / output terminal 4a: Metallized wiring layer 4b: protrusion 6: Lid 10: Semiconductor element 11: Thermoelectric cooling element 14: Lead wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 上側主面に半導体素子が熱電冷却素子を
介して載置される載置部を有する基体と、該基体の前記
上側主面の外周部に前記載置部を囲繞するように接合さ
れ、側部を貫通するかまたは該側部の上側を切り欠いて
成る入出力端子の取付部が形成された枠体と、前記取付
部に嵌着され、前記枠体の内外を電気的に導通するメタ
ライズ配線層が形成された入出力端子とを具備して成
り、前記熱電冷却素子はリード線を介して前記メタライ
ズ配線層に電気的に接続されている半導体素子収納用パ
ッケージにおいて、前記リード線に接続される前記メタ
ライズ配線層が形成された前記入出力端子の枠体内側の
部位が前記枠体内側に突出した突出部とされており、該
突出部の前記熱電冷却素子側の側面が前記熱電冷却素子
に向かって漸次低くなるように傾斜しているとともに前
記側面に前記メタライズ配線層が延出するように形成さ
れていることを特徴とする半導体素子収納用パッケー
ジ。1. A base having a mounting portion on which a semiconductor element is mounted on the upper main surface via a thermoelectric cooling element, and an outer peripheral portion of the upper main surface of the base surrounding the mounting portion. A frame body formed with an input / output terminal attachment portion formed by joining and penetrating the side portion or by notching the upper side of the side portion, and the frame body fitted into the attachment portion and electrically connected to the inside and outside of the frame body. An input / output terminal formed with a metallized wiring layer electrically connected to the thermoelectric cooling element, wherein the thermoelectric cooling element is electrically connected to the metallized wiring layer via a lead wire. A portion inside the frame of the input / output terminal on which the metallized wiring layer connected to the lead wire is formed is a protrusion protruding inside the frame, and a side surface of the protrusion on the thermoelectric cooling element side. Gradually decreases toward the thermoelectric cooling element. And the metallized wiring layer is formed so as to extend to the side surface. 【請求項２】 請求項１記載の半導体素子収納用パッケ
ージと、前記載置部に載置されるとともに前記入出力端
子に電気的に接続された半導体素子と、前記枠体の上面
に接合された蓋体とを具備したことを特徴とする半導体
装置。2. The semiconductor element housing package according to claim 1, the semiconductor element mounted on the mounting portion and electrically connected to the input / output terminals, and bonded to the upper surface of the frame body. A semiconductor device having a lid.
JP2001293028A 2001-09-26 2001-09-26 Package for housing semiconductor chip and semiconductor device Pending JP2003100971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001293028A JP2003100971A (en) 2001-09-26 2001-09-26 Package for housing semiconductor chip and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001293028A JP2003100971A (en) 2001-09-26 2001-09-26 Package for housing semiconductor chip and semiconductor device

Publications (1)

Publication Number Publication Date
JP2003100971A true JP2003100971A (en) 2003-04-04

Family

ID=19114895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001293028A Pending JP2003100971A (en) 2001-09-26 2001-09-26 Package for housing semiconductor chip and semiconductor device

Country Status (1)

Country Link
JP (1) JP2003100971A (en)

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