JP2003098976A - Electrooptical device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrooptical device which is suitably used for a portable telephone and a mobile computer or the like, can improve the reflectivity without changing the area of a pixel region, is superior in optical characteristics and low in cost, and to provide a manufacturing method of the device. SOLUTION: The device is made by laminating a pair of substrates which are arranged opposedly to each other while enclosing and holding electrooptical materials, a reflection plate 8 which is formed on the electrooptical material side of a glass substrate 10' of a TFT substrate side of the pair of the substrates and reflects incident light beams from a glass substrate 20' side of an opposing substrate side of the pair of the substrates and a transparent electrode 9 which is formed on the top layer side of the plate 8. The plate 8 and the electrode 9 are laminated while tip parts 8a and 9a of the respective forming regions are matched with each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electro-optical device. More specifically, the electro-optical device suitable for use in mobile phones, mobile computers, etc., which can improve the reflectance without changing the area of the pixel region, has excellent optical characteristics, and is low in cost, and the manufacturing thereof. Regarding the method.

[0002]

2. Description of the Related Art Electro-optical devices (for example, liquid crystal display devices,
EL light-emitting display devices and the like) are widely used as direct-view display devices for various devices such as mobile phones and mobile computers. FIG. 18 is an explanatory diagram schematically showing, for example, one pixel portion of an active matrix type reflective liquid crystal display device among such electro-optical devices.
18A is a plan view, and FIG. 18B is a sectional view taken along the line EE ′. FIG. 19 is an explanatory view schematically showing one pixel portion of an active matrix type semi-transmissive / semi-reflective liquid crystal display device. FIG. 19 (A) is a plan view and FIG.
9B is a cross-sectional view taken along the line FF ′. As shown in FIGS. 18 and 19, the TFT array substrate 110 and the counter substrate 120, which are opposed to each other, are attached to each other with a sealant (not shown), and the TFT array substrate 110 and the counter substrate 120 are disposed in a region defined by the sealant between the substrates. A liquid crystal 50 as an electro-optical substance is enclosed and held.

As shown in FIGS. 18 (A) and 18 (B), the outside light incident from the counter substrate 120 side is opposed to the uneven layer 107 having unevenness formed on the TFT array substrate 110. The reflection plate 108 having a surface uneven shape 108b corresponding to the unevenness of the uneven layer 107 for reflecting in the direction of the substrate 120, and wider than the end portion 108a of the reflection plate 108 so as to cover the entire reflection plate 108. The transparent electrode 109 (its end portion 109a) is formed so as to form a region. Concavo-convex forming layer 11 for forming concavo-convex
3 is formed of a photosensitive resin film, and an uneven layer 107 is formed on the upper surface of the uneven forming layer 113 to smooth the edges of the unevenness. In addition, the transparent electrode 10
An alignment film 112 is formed on the substrate 9. With such a configuration, light incident from the counter substrate 120 side is reflected by the reflector 8 of the TFT array substrate 110, and an image is displayed by the light emitted from the counter substrate 120 side (reflection mode).

Further, as shown in FIGS. 19A and 19B, in the case of the semi-transmissive / semi-reflective type, in addition to displaying an image in the above-mentioned reflection mode, the reflection plate 108 has a reflection plate 10.
A transparent window 103, which is a portion not forming 8 is provided, and light from a backlight (not shown) can be transmitted through this transparent window 103 to display an image (transmissive mode).

[0005]

In the liquid crystal display device having such a configuration, as shown in FIGS. 18 and 19, the transparent electrode 109 (its end portion 109a) is more than the reflection plate 108 (its end portion 108a). Formed to form a large area,
Since the formation area of the reflection plate 108 is smaller than that of the transparent electrode 109, there is a problem that sufficient reflectance cannot be secured.

Further, since the reflection plate 108 and the transparent electrode 109 are formed in different regions, it is necessary to separately pattern the reflection plate 108 and the transparent electrode 109, which causes a problem of increased cost.

The present invention has been made in view of the above-mentioned problems, and it is possible to improve the reflectance without changing the area of the pixel region and to have excellent optical characteristics.
It is another object of the present invention to provide a low cost electro-optical device and a manufacturing method thereof.

[0008]

In order to achieve the above-mentioned object, an electro-optical device of the present invention encloses an electro-optical material,
A pair of substrates arranged to be opposed to each other, and formed on the electro-optical substance side of one of the pair of substrates,
An electro-optical device comprising a reflective plate that reflects incident light from the other substrate side of the pair of substrates, and a transparent electrode that is formed on the upper layer side of the reflective plate, which are laminated together. It is characterized in that the plate and the transparent electrode are laminated in such a manner that the ends of the respective formation regions are aligned with each other.

With this structure, the reflectance of the electro-optical device can be improved without changing the area of the pixel region.

Further, in the electro-optical device of the present invention, the reflection plate is formed on a concavo-convex layer having irregularities on the surface formed on the one substrate, and the surface irregularity shape of the reflection plate is It is preferable to have a shape corresponding to the unevenness of the uneven layer.

With this structure, the optical characteristics of the electro-optical device can be improved.

Further, in the electro-optical device of the present invention, it is preferable that the reflector is composed of a laminated film of aluminum, silver, or an alloy thereof, or titanium, titanium nitride, molybdenum, tantalum, or the like. In addition, the transparent electrode is made of ITO (Indium Tin Oxid).
e) It is preferably composed of a film.

With this structure, the optical characteristics of the electro-optical device can be improved.

According to the method of manufacturing an electro-optical device of the present invention, one of a pair of substrates which are opposed to each other by enclosing and holding an electro-optical substance is provided on one side of the pair of substrates on the electro-optical substance side. A method of manufacturing an electro-optical device, including the step of forming a reflection plate that reflects incident light from the other substrate side, and the step of forming a transparent electrode on the reflection plate. A metal film is laminated on the side of the optical material, then a transparent conductive film is laminated on the upper side of the metal film, and then a laminate of the metal film and the transparent conductive film is simultaneously formed at the end portions of the respective formation regions. Patterning is performed so as to match with each other, and the reflection plate and the transparent electrode are formed at the same time in a predetermined pattern in which ends of respective formation regions match.

With this structure, the reflectance of the electro-optical device can be improved without changing the area of the pixel region, and the electro-optical device having excellent optical characteristics can be efficiently manufactured at low cost. it can.

In this case, a concavo-convex layer is formed on the one substrate before laminating the metal film on the one substrate,
It is preferable to stack the metal film having a surface uneven shape capable of scattering incident light corresponding to the surface shape on the uneven layer.

With this structure, an electro-optical device having improved optical characteristics can be efficiently manufactured at low cost.

In the method of manufacturing an electro-optical device according to the present invention, the reflecting plate may be aluminum, silver, or an alloy thereof, titanium, titanium nitride, molybdenum,
It is preferable to use a film composed of a laminated film of tantalum or the like, and as the transparent electrode, ITO (Indi) is used.
(um tin oxide) film is preferably used.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an electro-optical device and a method of manufacturing the same according to the present invention will be specifically described below with reference to the drawings.

[First Embodiment] (Basic Structure of Electro-Optical Device) FIG. 1 shows a liquid crystal display device, which is a first embodiment of the electro-optical device of the present invention, facing each other with respective constituent elements. It is a plan view seen from the substrate side,
FIG. 2 is a sectional view taken along the line HH ′ of FIG. Figure 3
FIG. 4 is an equivalent circuit diagram of various elements, wirings, etc. in a plurality of pixels formed in a matrix in an image display area of an electro-optical device (liquid crystal display device). In each of the drawings used to describe the present embodiment, the scale of each layer and each member is different in order to make each layer and each member recognizable in the drawing.

1 and 2, in the electro-optical device (liquid crystal display device) 100 of this embodiment, the TFT array substrate 10 (first substrate) and the counter substrate 20 (second substrate) are sealing materials. This sealing material 5 is attached by 52.
A liquid crystal 50 as an electro-optical material is sealed and held in a region (liquid crystal sealed region) divided by 2.
A peripheral partition 53 made of a light-shielding material is formed in a region inside the formation region of the sealing material 52. Seal material 5
In the region outside 2, the data line driving circuit 101 and the mounting terminals 102 are formed along one side of the TFT array substrate 10, and the scanning line driving circuit 104 is formed along two sides adjacent to this side. Has been done. TFT array substrate 1
A plurality of wirings 1 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided on the remaining side of 0.
05 is provided, and further, a precharge circuit or a test circuit may be provided using the lower side of the peripheral parting line 53 or the like. In addition, an inter-substrate conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided at least at one corner of the counter substrate 20. Here, reference numeral 2 in FIG.
Reference numeral 1 is a counter electrode, 23 is a light-shielding film, and 30 is a pixel switching TFT.

Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB on which a driving LSI is mounted is mounted.
(Tape automated bonding) Substrate and T
You may make it electrically and mechanically connect with the terminal group formed in the peripheral part of FT array substrate 10 through an anisotropic conductive film. In the electro-optical device 100, the type of the liquid crystal 50 to be used, that is, an operation mode such as a TN (twisted nematic) mode and an STN (super TN) mode, and a normally white mode / a normally black mode can be selected. Then, a polarizing film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction, but they are not shown here.

When the electro-optical device 100 is configured for color display, the TF is formed on the counter substrate 20.
For example, red (R), green (G), and blue (B) color filters are formed together with their protective films in regions of the T-array substrate 10 that face pixel electrodes to be described later.

The electro-optical device 10 having such a structure.
In the image display area of 0, as shown in FIG. 3, a plurality of pixels 100a are arranged in a matrix, and a reflective plate 8, a transparent electrode 9 and a TFT 30 are formed in each of the pixels 100a. The pixel signal S
The data line 6a for supplying 1, S2, ... Sn is a TFT
It is electrically connected to 30 sources. Data line 6a
The pixel signals S1, S2, ..., Sn to be written into may be supplied line-sequentially (in the order of line numbers) in this order, or supplied to each of a plurality of adjacent data lines 6a in groups. You may do it. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2, and P2 are pulsed to the scanning line 3a at a predetermined timing.
... Gm is applied in this order line-sequentially (in the order of line numbers). The reflection plate 8 is electrically connected to the drain of the TFT 30, and by turning on the TFT 30 that is a switching element for a certain period, the pixel signals S1 and S supplied from the data line 6a are supplied.
2, ... Sn is written in each pixel at a predetermined timing. The predetermined-level pixel signals S1, S2, ... Sn written in the liquid crystal through the reflection plate 8 in this way are held for a certain period between the pixel signals S1, S2, ... Sn and the counter electrode 21 of the counter substrate 20 shown in FIG. .

Here, the liquid crystal 50 modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the amount of incident light passing through the liquid crystal 50 is reduced according to the applied voltage, and in the normally black mode, the incident light is changed according to the applied voltage. The amount of light passing through the liquid crystal 50 increases. As a result, light having a contrast corresponding to the pixel signals S1, S2, ... Sn is emitted from the electro-optical device 100 as a whole.

The held pixel signals S1, S2, ...
..In order to prevent Sn from leaking, a storage capacitor 60 is provided in parallel with the liquid crystal capacitor formed between the reflection plate 8 and the counter electrode.
(See FIG. 3) may be added. For example, the reflector 8
Is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the electro-optical device 100 having a high contrast ratio can be realized. As a method of forming the storage capacitor 60, as shown in FIG. 3, the capacitance line 3 which is a wiring for forming the storage capacitor 60.
It may be formed between the scanning line 3b and the scanning line 3b, or may be formed between the scanning line 3a and the scanning line 3a in the preceding stage.

(Structure of TFT Array Substrate) FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate used in this embodiment. FIG. 5 is an explanatory diagram showing one specific mode (reflection type) of the hatched region (reflector and transparent electrode formation region, that is, pixel) in FIG. 4, and FIG. 5B is a sectional view taken along the line AA ′. FIG. 6 shows another specific mode (semi-transmissive, semi-reflective type) of the hatched area (reflector and transparent electrode forming area, that is, pixel) in FIG.
Is a plan view, and FIG. 6B is a sectional view taken along the line BB ′. 5 and 6, the counter substrate and the liquid crystal are not shown.

In FIG. 4, a plurality of transparent ITO (Indium Tin Ox) are formed on the TFT array substrate 10.
The transparent electrodes 9 made of a (ide) film are formed in a matrix, and the pixel switching TFTs 30 are connected to the respective transparent electrodes 9. Further, along the vertical and horizontal boundaries of the transparent electrode 9, the data line 6a and the scanning line 3
a and the capacitance line 3b are formed, and the TFT 30 is connected to the data line 6a and the scanning line 3a. That is, the data line 6a is connected to the TFT through the contact hole.
It is electrically connected to the high concentration source region 1a of 30 and the transparent electrode 9 is electrically connected to the high concentration drain region 1d of the TFT 3 through the contact hole 15. Also, TFT
The scanning line 3a extends so as to face the channel forming region 1a ′ of 30. Note that the storage capacitor 60 (storage capacitor element) has a lower electrode that is obtained by making the extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30 conductive, and the lower electrode is the same as the scanning line 3b. Layer capacity line 3b
Has an overlapping structure as an upper electrode.

As shown in FIGS. 5 and 6, in each pixel 100a thus constructed, the area where the reflector 8 and the transparent electrode 9 are formed (in this case, the reflector 8 and the transparent electrode 9 are separated from each other). , Of the respective formation areas are stacked with the end portions 8a and 9a thereof aligned with each other), the area in which the transmission window 14 is formed in the reflection plate 8 is a transmission area for displaying in the transmission mode ( In the case shown in FIG. 6, the area in which the reflection plate 8 is formed is a reflection area, and display is performed in the reflection mode here (in the case shown in FIG. 5).

A second interlayer insulating film 5 is formed on an upper layer of the glass substrate 10 'on the TFT array substrate side, and an unevenness formed of a photosensitive resin such as an organic resin is formed on the second interlayer insulating film 5. The layer 13 and the uneven layer 7 are formed in this order, and aluminum, silver, or an alloy thereof,
Alternatively, it is formed by laminating a reflection plate 8 made of a laminated film of titanium, titanium nitride, molybdenum, tantalum, etc. and a transparent electrode 9 made of an ITO film.

As shown in FIGS. 5 to 6, the reflection plate 8 and the transparent electrode 9 are formed by laminating on the uneven layer 7.
In constructing such an uneven layer 7, in the present embodiment, the uneven forming layer 13 made of an organic photosensitive resin is formed on the surface of the second interlayer insulating film 5 on the lower side of the reflection plate 8. The concavo-convex forming layer 13 is formed to have a thickness of 3 μm.
An uneven layer 7 made of an insulating film made of a fluid material made of a photosensitive resin such as an organic resin is laminated on the upper layer.

A large number of irregularities are formed on the irregularity forming layer 13. Therefore, as shown in FIGS. 5 to 6, a concavo-convex pattern (surface concavo-convex shape) 8g corresponding to the concavo-convex of the concavo-convex forming layer 13 is formed on the surface of the reflection plate 8, and in the concavo-convex pattern 8g, the concavo-convex layer is formed. 7, the edges of the unevenness forming layer 13 are prevented from appearing. In addition, you may smooth the edge of the unevenness | corrugation of the unevenness | corrugation formation layer 13 by forming the unevenness | corrugation formation layer 13 without forming the unevenness | corrugation layer 7, and performing a baking process after that.

The aperture shape of the transmissive window 14 is the same as that of the reflection plate 8.
There is no particular limitation as long as the end portions 8a and 9a of the formation region of the transparent electrode 9 coincide with each other, and may have a rectangular shape as shown in FIG. 6 (A), such as a parallelogram or a trapezoid. Or a combination thereof. The number is not particularly limited as long as it does not reduce the reflection efficiency.

On the upper layer side of the transparent electrode 9, an alignment film 12 is formed.
Is formed. A rubbing treatment is applied to this alignment film. This alignment film is used for the TFT shown in FIG.
It corresponds to the alignment film 12 in the formation region.

As shown in FIG. 7, the cross section taken along the line CC 'of the reflection area in FIG. 4 has a thickness of 300 nm or more on the surface of the glass substrate 10' on the TFT array substrate side.
A base protective film 11 made of a 500 nm silicon oxide film (insulating film) is formed, and the surface of the base protective film 11 is formed.
The island-shaped semiconductor film 1 having a thickness of 30 nm to 100 nm is formed. The surface of the semiconductor film 1 has a thickness of about 50 to 1
A gate insulating film 2 made of a 50 nm silicon oxide film is formed, and a thickness of 300 n is formed on the surface of the gate insulating film 2.
The scanning line 3a of m to 800 nm passes through as a gate electrode. A region of the semiconductor film 1 facing the scanning line 3a with the gate insulating film 2 interposed therebetween is a channel forming region 1
It is a '. A source region including a low concentration region 1b and a high concentration source region 1a is formed on one side of the channel forming region 1a ', and a drain including a low concentration region 1b and a high concentration drain region 1d is formed on the other side. A region is formed.

A first interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm is formed on the surface side of the pixel switching TFT 30. A data line 6a having a thickness of 300 nm to 800 nm is formed on the surface of the first interlayer insulating film 4, and the data line 6a passes through the contact hole formed in the first interlayer insulating film 4 and has a high concentration source region. It is electrically connected to 1a. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and the drain electrode 6b is the first electrode.
It is electrically connected to the high concentration drain region 1d through a contact hole formed in the interlayer insulating film 4.

A second layer having a thickness of 100 nm to 800 nm, which is made of a single film of a silicon nitride film or a silicon oxide film or two films of a silicon nitride film and a silicon oxide film, is formed on the first interlayer insulating film 4. An interlayer insulating film (surface protective film) 5 is formed (this second interlayer insulating film (surface protective film) 5 may not be formed). A concavo-convex forming layer 13 and a concavo-convex layer 7 made of a photosensitive resin such as an organic resin are formed in this order on the upper layer of the second interlayer insulating film (surface protection film) 5, and the surface of the concavo-convex layer 7 is used for transmission. The reflection plate 8 made of an aluminum film or the like having the transmission window 14 is formed.
An uneven pattern 8g corresponding to the uneven surface shape of the uneven layer 7 is formed on the surface of the reflection plate 8.

An ITO film is formed on the reflection plate 8 in an amount of about 50 to 2
A transparent electrode 9 having a thickness of 00 nm is formed, and the transparent electrode 9 is electrically connected to the drain electrode 6b through a contact hole 15.

An alignment film 12 made of a polyimide film is formed on the surface side of the transparent electrode 9. The alignment film 12 is subjected to rubbing treatment.

For the extended portion 1f (lower electrode) extending from the high-concentration drain region 1d, an insulating film (dielectric film) formed at the same time as the gate insulating film 2 is interposed between the scanning line 3a and the scanning line 3a. Since the capacitive lines 3b of the layers face each other as the upper electrode,
A storage capacity 60 is configured.

The TFT 30 preferably has the LDD structure as described above, but may have the offset structure in which the impurity ions are not implanted in the regions corresponding to the low concentration region 1b and the high concentration region 1c. Good. Also, TF
The T30 may be a self-aligned TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting high-concentration impurity ions using the gate electrode (a part of the scanning line 3a) as a mask.

Further, in the present embodiment, the dual gate (double gate) structure in which two gate electrodes (scanning lines 3a) of the TFT 30 are arranged between the source and drain regions is used, but a single gate structure is arranged. Or a structure of triple gate or more in which three or more gate electrodes are arranged between them. When a plurality of gate electrodes are arranged, the same signal is applied to each gate electrode. By configuring the TFT 30 with a dual gate (double gate) or a triple gate or more in this way, it is possible to prevent a leak current at the junction between the channel and the source-drain region, and reduce the off-time current. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

5 to 6, the TFT array substrate 1
In the case of 0, in the reflective area of each pixel 100a, as described above, in the area of the surface of the reflective plate 8 where the TFT 30 (see FIG. 4) is formed and in the area deviated from the transmissive window 14 (the reflective plate forming area). An uneven pattern 8g is formed.

In constructing such a concavo-convex pattern 8g, in the TFT array substrate 10 of the present embodiment,
An unevenness forming layer 13 made of an organic photosensitive resin such as acrylic resin is provided on the surface of the second interlayer insulating film 1 to 3 μm in a region of the lower layer side of the reflecting plate 8 which planarly overlaps with the reflecting plate 8.
Is formed by, for example, spin coating, and the unevenness layer 7 made of an insulating film made of a fluid material such as an organic photosensitive resin such as an acrylic resin is formed on the unevenness formation layer 13 as an upper layer. Are laminated with a thickness of 1 to 2 μm, for example, by spin coating.

A large number of irregularities are formed on the irregularity forming layer 13. Therefore, as shown in FIG. 5, a concavo-convex pattern 8g corresponding to the surface concavo-convex shape of the concavo-convex layer 7 is formed on the surface of the reflection plate 8. In the concavo-convex pattern 8g, the concavo-convex forming layer 13 is formed by the concavo-convex layer 7. The edges and so on do not appear. In addition, you may smooth the edge of the unevenness | corrugation of the unevenness | corrugation formation layer 13 by forming the unevenness | corrugation formation layer 13 without forming the unevenness | corrugation layer 7, and performing a baking process after that.

(Structure of Counter Substrate) In FIG. 5, in the counter substrate 20, the TF on the glass substrate 20 ′ on the counter substrate side is used.
A light-shielding film 23 called a black matrix or a black stripe is formed in a region facing the vertical and horizontal boundary regions of the transparent electrodes 9 formed on the T-array substrate 10, and an ITO film is formed on the upper side of the light-shielding film 23. The electrode 21 is formed. Further, on the upper layer side of the counter electrode 21, an alignment film 22 made of a polyimide film is formed. In addition, T
The liquid crystal 5 is provided between the FT array substrate 10 and the counter substrate 20.
0 is retained and enclosed.

(Operation of Electro-Optical Device) In the electro-optical device 100 (see FIG. 1) configured as described above, in the case of the reflection type, since the reflection plate 8 made of an aluminum film or the like is formed, the counter substrate is formed. Light incident from the 20 side is TFT
Since the light can be reflected on the array substrate 10 side and emitted from the counter substrate 20 side, if light modulation is performed by the liquid crystal 50 for each pixel 100a during this period, a desired image is displayed using external light (reflection). Mode) (for the reflection type shown in FIG. 5).

In the case of the semi-transmissive / semi-reflective type, since the reflecting plate 8 is formed so as to avoid the transmissive window 14 in FIG. 6, it also functions as a transmissive liquid crystal display device. That is, the light emitted from the backlight device (not shown) arranged on the side of the TFT array substrate 10 enters the side of the TFT array substrate 10 and then the reflection plate 8 in each pixel 100a (see FIG. 6). Of the region where the reflection plate 8 is not formed, the light is transmitted to the counter substrate 20 side via the transmission region (the transmission window 14 covered with the transparent electrode 9) where the reflection plate 8 is not formed. Therefore, if light modulation is performed by the liquid crystal 50 for each pixel 100a, a desired image can be displayed using the light emitted from the backlight device (transmission mode).

Further, in the present embodiment, the concavo-convex forming layer 13 is formed in a region of the lower layer side of the reflecting plate 8 which planarly overlaps with the reflecting plate 8, and the concavo-convex of the concavo-convex forming layer 13 is utilized.
An uneven pattern 8g for light scattering is formed on the surface of the reflector 8. In the uneven pattern 8g, the uneven layer 7 prevents the edges of the uneven forming layer 13 from appearing. Therefore, when the image is displayed in the reflection mode, the image is displayed by the scattered reflected light, so that the viewing angle dependency is small.

Further, since the surface of the reflector 8 is covered with the transparent electrode 9, the alteration of the reflector 8 can be prevented.

In this embodiment, the transparent electrode and the potential supply line (source line) are electrically connected, but the transparent electrode and the semiconductor layer are electrically connected. It may be.

[First Embodiment] TF having such a configuration
A method of manufacturing the T array substrate will be specifically described with reference to FIGS.

8 to 12 are sectional views showing a method of manufacturing the TFT array substrate of this embodiment in the order of steps.

First, as shown in FIG. 8A, after a glass substrate 10 'on the TFT array substrate side made of glass or the like, which has been cleaned by ultrasonic cleaning or the like, is prepared, the substrate temperature is 150.degree.
Under the temperature condition of ˜450 ° C., a base protective film 11 made of a silicon oxide film is formed on the entire surface of the glass substrate 10 ′ on the TFT array substrate side by a plasma CVD method to a thickness of 100 nm˜500.
It is formed to a thickness of nm. As the raw material gas at this time,
For example, mixed gas of monosilane and laughing gas (dinitrogen monoxide) or TEOS (tetraethoxysilane: Si (OC)
₂ H ₅ ) ₄ ) and oxygen, or disilane and ammonia can be used.

Next, under the temperature condition of the substrate temperature of 150 ° C. to 450 ° C., the semiconductor film 1 made of an amorphous silicon film is formed on the entire surface of the glass substrate 10 ′ on the TFT array substrate side by the plasma CVD method in the range of 30 nm to 30 nm. It is formed to a thickness of 100 nm. As the raw material gas at this time, for example, disilane or monosilane can be used. Next, the semiconductor film 1 is irradiated with laser light to perform laser annealing. As a result, the amorphous semiconductor film 1 is once melted and crystallized through a cooling and solidifying process. At this time, the irradiation time of the laser beam to each area is very short, and the irradiation area is local to the entire substrate, so that the entire substrate is not heated to a high temperature at the same time. Therefore, even if a glass substrate or the like is used as the glass substrate 10 'on the TFT array substrate side, deformation or cracking due to heat does not occur.

Next, by etching the semiconductor film 1 on the surface of the semiconductor film 1 through the resist mask 551 using a photolithography technique, as shown in FIG. 8B, the island-shaped semiconductor film 1 ( An active layer) and a semiconductor film for forming a capacitor are formed separately.

Next, under a temperature condition of 350 ° C. or lower, TF
A gate insulating film 2 made of a silicon oxide film or the like is formed to a thickness of 50 nm to 150 nm on the surface of the semiconductor film 1 on the entire surface of the glass substrate 10 'on the T array substrate side by the CVD method or the like. As the raw material gas at this time, for example, a mixed gas of TEOS and oxygen gas can be used. The gate insulating film 2 formed here may be a silicon nitride film instead of the silicon oxide film.

Next, although not shown, impurity ions are implanted into the extended portion 1f of the semiconductor film 1 through a predetermined resist mask to form a storage capacitor 60 between the capacitor line 3b and the capacitor line 3b. The electrodes are formed (see FIG. 7).

Next, as shown in FIG. 8C, aluminum for forming the scanning lines 3a and the like is formed on the entire surface of the glass substrate 10 'on the TFT array substrate side by the sputtering method or the like.
A conductive film 3 made of a metal film made of silver, tantalum, molybdenum, or the like, or an alloy film containing any of these metals as a main component is formed to a thickness of 300 nm to 800 nm, and then a resist mask is formed using a photolithography technique. 552 is formed.

Next, the conductive film 3 is dry-etched through a resist mask to form scanning lines 3a (gate electrodes), capacitance lines 3b, etc., as shown in FIG. 8D.

Next, on the side of the pixel TFT section and the N-channel TFT section (not shown) of the drive circuit, using the scanning line 3a and the gate electrode as a mask, about 0.1 × 10 ¹³ / cm ² 〜.
Impurity ions (phosphorus ions) of low concentration are implanted at a dose of about 10 × 10 ¹³ / cm ² to form the low concentration region 1b in a self-aligned manner with respect to the scanning line 3a. Here, since it is located right below the scanning line 3a, the portion into which the impurity ions are not introduced becomes the channel forming region 1a 'of the semiconductor film 1 as it is.

Next, as shown in FIG. 9A, the pixel TF
At the T portion, a resist mask 553 wider than the scanning line 3a (gate electrode) is formed to add high concentration impurity ions (phosphorus ions) to about 0.1 × 10 ¹⁵ / cm ² to about 10 × 1.
Implantation is performed with a dose amount of 0 ¹⁵ / cm ² to form the high concentration source region 1a, the high concentration region 1c, and the high concentration drain region 1d.

Instead of these impurity introduction steps, a high-concentration impurity (phosphorus ion) is implanted in a state where a low-concentration impurity is not implanted and a resist mask wider than the gate electrode is formed, and the source region of the offset structure is formed. And the drain region may be formed. Alternatively, a high-concentration impurity may be implanted using the scanning line 3a as a mask to form a source region and a drain region having a self-aligned structure.

Although not shown, the N-channel TFT portion of the peripheral drive circuit portion is formed by such a process, but at this time, the P-channel TFT portion is covered with a mask. Further, when forming the P-channel TFT portion of the peripheral drive circuit, the pixel portion and the N-channel TFT portion are covered and protected with a resist, and the gate electrode is used as a mask to form about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ²
By implanting boron ions with a dose of, a P-channel source-drain region is formed in a self-aligned manner.

At this time, as in the case of forming the N-channel TFT portion, the gate electrode is used as a mask to form about 0.1 × 10 ¹³ /
After a low concentration impurity (boron ion) is introduced at a dose amount of cm ² to about 10 × 10 ¹³ / cm ² to form a low concentration region in the polysilicon film, a mask wider than the gate electrode is formed. And a high concentration of impurities (boron ions) is about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ^2.
It is also possible to form a source region and a drain region of an LDD structure (lightly doped drain structure) by implanting with a dose amount of. Alternatively, the source region and the drain region of the offset structure may be formed by implanting high-concentration impurities (boron ions) in a state where a mask wider than the gate electrode is formed without implanting low-concentration impurities. . By these ion implantation steps, CMOS
(Complementary MOS: Complementary MOS
It is possible to embed the peripheral drive circuit in the same substrate.

Next, as shown in FIG. 9B, the scanning line 3
A first interlayer insulating film 4 made of a silicon oxide film or the like is formed on the surface side of a by a CVD method or the like to have a thickness of 300 nm to 800 nm. The raw material gas at this time is, for example, TEOS.
A mixed gas of oxygen gas and oxygen gas can be used.

Next, a resist mask 554 is formed by using the photolithography technique.

Next, the first mask is formed through the resist mask 554.
The interlayer insulating film 4 is dry-etched to form contact holes in portions of the first interlayer insulating film 4 corresponding to the source region and the drain region, as shown in FIG. 9C.

Next, as shown in FIG. 9D, on the surface side of the first interlayer insulating film 4, an aluminum film, a titanium film, a titanium nitride film for forming the data line 6a (source electrode), etc., After forming a conductive film 6 made of a tantalum film, a molybdenum film, or an alloy film containing any of these metals as a main component to a thickness of 300 nm to 800 nm by a sputtering method or the like,
Resist mask 555 using photolithography technology
To form.

Next, as shown in FIG. 10A, the conductive film 6 is dry-etched through a predetermined resist mask to form the data line 6a and the drain electrode 6b.

Next, as shown in FIG. 10B, a single film of a silicon nitride film or a silicon oxide film or two films such as a silicon nitride film and a silicon oxide film are formed on the first interlayer insulating film 4. Consisting of 100 nm to 300 nm
A second interlayer insulating film (surface protection film) 5 having a thickness of about nm is formed by plasma CVD method (this second interlayer insulating film 5 may not be formed).

Next, as shown in FIGS. 11A and 11B, an organic photosensitive resin 13a such as an acrylic resin is deposited on the surface of the second interlayer insulating film (surface protection film) 5 in a thickness of 1 to 3 μm. To a thickness of 1 μm or less on the lower layer side of the reflection plate 8 which will be described later by applying the photosensitive resin 13a by spin coating to a thickness of 10 μm.
An unevenness forming layer 13 having a thickness of 3 μm is formed. Then, a baking process may be performed to remove the corners.

When the concavo-convex forming layer 13 is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 13a. In FIG. The case of the positive type is illustrated as the resin 13a, and the portion where the photosensitive resin 13a is to be removed is irradiated with ultraviolet rays through the light transmitting portion of a predetermined exposure mask.

Next, as shown in FIG. 11C, an organic photosensitive resin 7a such as an acrylic resin is spun on the surface side of the second interlayer insulating film (surface protective film) 5 and the concavo-convex forming layer 13. Coat to a thickness of 1 μm to 2 μm.

Next, as shown in FIG. 11D, the photosensitive resin 7a is exposed and developed to pattern the photosensitive resin 7a, and the second interlayer insulating film (surface protection film) 5 is formed. The concavo-convex layer 7 having a thickness of 1 μm to 2 μm is formed by penetrating and opening until reaching the surface (this portion will eventually form the contact hole 15).

Here, since the uneven layer 7 is formed by applying a material having fluidity, the unevenness of the uneven forming layer 13 is appropriately canceled on the surface of the uneven layer 7 so that there is no edge. An uneven pattern having a smooth shape is formed.

When forming an uneven pattern having a smooth shape without forming the uneven layer 7, a baking process is performed in the state shown in FIG. 10B to smooth the edges of the uneven layer 13. Any shape may be used.

Next, as shown in FIG. 12A, the second interlayer insulating film (surface protection film) 5 is removed by dry etching technique using the concavo-convex layer 7 as a mask, and the contact hole 15 is formed.
Is formed so that the transparent electrode 9 described later and the drain electrode 6b can be electrically connected. Here, the process of etching the second interlayer insulating film (surface protection film) 5 using the uneven layer 7 made of a photosensitive resin as a mask has been described as an example, but in FIG. 11A, an organic material such as an acrylic resin is used. The contact hole 15 may be formed in advance in the second interlayer insulating film (surface protection film) 5 by a photolithography method before applying the photosensitive resin 13a of the system.

Next, as shown in FIG. 12B, a metal film 8b having a reflectivity such as the above-mentioned aluminum film having a thickness of 50 nm to 200 nm is formed by a sputtering method or the like.

Next, as shown in FIG. 12C, the ITO film 9b is formed to a thickness of about 50 to 200 by a sputtering method or the like.
The film is formed to a thickness of nm.

Next, as shown in FIG. 12D, the reflection plate 8 and the transparent electrode 9 having a predetermined pattern are simultaneously formed by using the photolithography technique and the etching technique.
In this case, the end 8a of the area where the reflector 8 is formed and the transparent electrode 9
The patterning is performed in a state where the end portion 9a of the formation region of the is matched. On the surfaces of the reflection plate 8 and the transparent electrode 9 thus formed, the uneven pattern 8g of 500 nm or more, further 800 nm or more is formed by the unevenness of the unevenness forming layer 13 and the uneven layer 7, and the uneven pattern is formed. 8 g has a smooth shape without edges due to the uneven layer 7.

FIG. 13 is a plan view of the TFT array substrate shown in FIG. A sectional view taken along the line DD ′ of FIG. 13 corresponds to FIG. As shown in FIG. 13, it can be seen that the patterning is performed in a state where the end of the formation area of the reflection plate 8 and the end of the formation area of the transparent electrode 9 coincide with each other, and the concavo-convex pattern 8g is formed.

After that, an alignment film (polyimide film) 12 (see FIG. 7) is formed on the surface side of the transparent electrode 9. It has
5 in a solvent such as butyl cellosolve or n-methylpyrrolidone
A polyimide varnish containing 10% by weight of polyimide or polyamic acid dissolved therein is flexographically printed, and then heated and cured (baked). Then, the substrate on which the polyimide film is formed is rubbed in a certain direction with a puff cloth made of rayon fibers to arrange the polyimide molecules in a certain direction near the surface (rubbing treatment is performed). As a result, the liquid crystal molecules are aligned in a certain direction due to the interaction between the liquid crystal molecules filled later and the polyimide molecules. The direction of this rubbing process is, as described above,
It is preferable to match the longitudinal direction of the slit.

As described above, the TFT array substrate 10
(See FIG. 7) is completed.

In each of the above-mentioned embodiments, the active matrix type liquid crystal display device using the TFT as the pixel switching element has been described as an example, but the active matrix type liquid crystal display device using the TFD as the pixel switching element or the passive type liquid crystal display device. Matrix type liquid crystal display device, and further electro-optical material other than liquid crystal (for example, EL light emitting element)
The present invention may be applied to an electro-optical device using.

In the first embodiment, the reflection plate 8 and the transparent electrode 9 having a predetermined pattern are simultaneously formed by using the photolithography technique and the etching technique. However, as will be described later with reference to FIG. The patterning of the reflection plate 8 and the transparent electrode 9 may be performed individually by using a photolithography technique and an etching technique.

[Second Embodiment] FIG. 14 is a sectional view schematically showing a liquid crystal display device which is a second embodiment of the electro-optical device of the present invention. FIG. in the case of,
FIG. 14B shows a case of a semi-transmissive type and a semi-reflective type, respectively. In either case, the patterning is performed in a state where the end of the formation area of the reflection plate 8 and the end of the formation area of the transparent electrode 9 are aligned, and the concavo-convex pattern 8g is formed.

As shown in FIG. 14A, the liquid crystal display device (reflection type) of the second embodiment is similar to the liquid crystal display device of the first embodiment in that a transparent TFT array is used. A base protective film 11 made of a silicon oxide film (insulating film) is formed on the surface of the glass substrate 10 ′ on the substrate side, and the island-shaped semiconductor film 1 is formed on the surface of the base protective film 11. A gate insulating film 2 made of a silicon oxide film is formed on the surface of the semiconductor film 1, and a scanning line 3a passes through the surface of the gate insulating film 2 as a gate electrode. A region of the semiconductor film 1 that faces the scanning line 3a via the gate insulating film 2 is a channel forming region 1a '. A source region including a low concentration region 1b and a high concentration source region 1a is formed on one side of the channel forming region 1a ', and a drain including a high concentration region 1c and a high concentration drain region 1d is formed on the other side. A region is formed.

A first interlayer insulating film (surface protection film) 4 made of a silicon oxide film is formed on the surface side of the pixel switching TFT 30. A data line 6a is formed on the surface of the first interlayer insulating film 4, and the data line 6a is
It is electrically connected to the high concentration source region 1a through a contact hole formed in the first interlayer insulating film 4. First
A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the interlayer insulating film 4, and the drain electrode 6b is formed.
Are electrically connected to the high-concentration drain region 1d through a contact hole formed in the first first interlayer insulating film 4.

On the upper layer of the first interlayer insulating film 4, a second interlayer insulating film (surface protection film) 5 composed of a single film of a silicon nitride film or a silicon oxide film or two films of a silicon nitride film and a silicon oxide film, etc. Are formed. On the upper layer of the second interlayer insulating film (surface protection film) 5, a concavo-convex forming layer 13 and a concavo-convex layer 7 made of a photosensitive resin such as an organic resin are formed in this order, and an aluminum film is formed on the surface of the concavo-convex layer 7. And the like. An uneven pattern 8g corresponding to the uneven surface shape of the uneven layer 7 is formed on the surface of the reflection plate 8. Next, pattern formation is performed using photolithography technology. At this time, the reflection plate is removed from the contact region between the data line 6a (source electrode) and the pixel electrode.

A transparent electrode 9 having an ITO film laminated thereon is formed on the reflection plate 8, and the transparent electrode 9 is electrically connected to the drain electrode 6b through a contact hole 15.

In this case, the patterning of the reflection plate 8 and the transparent electrode 9 is individually performed by using the photolithography technique and the etching technique, respectively.

On the surface side of the transparent electrode 9, an alignment film 12 made of a polyimide film is formed. The alignment film 12 is subjected to rubbing treatment.

For the extended portion 1f (lower electrode) extending from the high-concentration drain region 1d, the same line as the scanning line 3a is formed via an insulating film (dielectric film) formed simultaneously with the gate insulating film 2. Since the capacitive lines 3b of the layers face each other as the upper electrode,
A storage capacity 60 is configured.

As shown in FIG. 14B, in the liquid crystal display device (semi-transmissive, semi-reflective type) of the second embodiment, the reflector 8 is used.
Substantially the same as the case of the reflection type liquid crystal display device, except that the transmission window 14 for transmission is formed in the.

With this structure, the effective voltage applied to the liquid crystal is high, and high contrast display is possible.
In addition, it is possible to provide an electro-optical device in which the quality of the reflection plate is prevented.

[Application of Electro-Optical Device to Electronic Equipment] The reflective or semi-transmissive / semi-reflective electro-optical device 100 configured as described above can be used as a display portion of various electronic devices. One example thereof will be specifically described with reference to FIGS.

FIG. 15 is a block diagram showing a circuit configuration of an electronic device using the electro-optical device according to the present invention as a display device.

In FIG. 15, the electronic device has a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal display device 74. The liquid crystal display device 74 also includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the electro-optical device 100 described above can be used.

The display information output source 70 is a ROM (Read
Only Memory), RAM (Random)
An image of a predetermined format is provided on the basis of various clock signals generated by the timing generator 73, which includes a memory such as an access memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like. Display information such as a signal is supplied to the display information processing circuit 71.

The display information processing circuit 71 includes various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and executes processing of input display information. Then, the image signal is supplied to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

FIG. 16 shows a mobile personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 80 shown here has a main body 82 having a keyboard 81, and a liquid crystal display unit 83. The liquid crystal display unit 83 includes the electro-optical device 100 described above.

FIG. 17 shows a portable telephone which is another electronic device. The mobile phone 90 shown here has a plurality of operation buttons 91 and a display unit including the electro-optical device 100 described above.

[0104]

As described above, according to the present invention, the reflectance can be improved without changing the area of the pixel region, which is preferably used for the mobile phone, the mobile computer, etc., and the optical characteristics can be improved. It is possible to provide an excellent and low-cost electro-optical device and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1 is a plan view of a first embodiment of an electro-optical device of the present invention when viewed from a counter substrate side.

FIG. 2 is a cross-sectional view taken along the line H-H ′ of FIG.

FIG. 3 is an equivalent circuit diagram of various elements, wirings, etc. formed in a plurality of pixels arranged in a matrix in the first embodiment of the electro-optical device of the present invention.

FIG. 4 is a plan view showing a configuration of each pixel formed on the TFT array substrate in the first embodiment of the electro-optical device of the present invention.

5A and 5B are explanatory views showing the configuration of each pixel formed on the TFT array substrate in the first embodiment (reflection type) of the electro-optical device of the present invention, FIG. 5A being a plan view and FIG. 5
5B is a sectional view taken along the line AA ′ of FIG.

FIG. 6 is an explanatory diagram showing a configuration of each pixel formed on the TFT array substrate in the first embodiment (semi-transmissive, semi-reflective type) of the electro-optical device of the present invention, and FIG. A plan view and FIG. 6B are cross-sectional views taken along the line BB ′ of FIG.

FIG. 7 is a sectional view schematically showing a TFT formation region in the first embodiment of the electro-optical device of the invention.

FIG. 8 is a cross-sectional view showing the method of manufacturing the electro-optical device according to the first embodiment of the invention in the order of steps.

9A to 9D are cross-sectional views showing a manufacturing method after the step shown in FIG.

FIG. 10 is a cross-sectional view showing the manufacturing method after the step shown in FIG. 9 in the order of steps.

FIG. 11 is a cross-sectional view showing the manufacturing method in the order of steps, starting from the step shown in FIG. 10.

FIG. 12 is a cross-sectional view showing the manufacturing method in the order of steps, starting from the step shown in FIG. 11.

FIG. 13 is a cross-sectional view of the TFT array substrate shown in FIG.

FIG. 14 is a sectional view schematically showing the configuration of each pixel formed on the TFT array substrate in the second embodiment of the electro-optical device of the present invention. FIG. FIG. 14B shows a case of a semi-transmissive type and a semi-reflective type, respectively.

FIG. 15 is a block diagram showing a circuit configuration of an electronic device using the electro-optical device according to the invention as a display device.

FIG. 16 is an explanatory diagram showing a mobile personal computer as an example of an electronic apparatus using the electro-optical device of the invention.

FIG. 17 is an explanatory diagram of a mobile phone as another example of an electronic apparatus using the electro-optical device of the invention.

FIG. 18 is an explanatory view schematically showing one pixel portion of a conventional reflective liquid crystal display device, FIG. 18 (A) is a plan view, and FIG.
8B is a sectional view taken along the line EE ′.

19A and 19B are explanatory views schematically showing one pixel portion of a conventional semi-transmissive / semi-reflective liquid crystal display device. FIG. 19A is a plan view and FIG. 19B is its FF ′ line. FIG.

[Explanation of symbols]

1 ... Semiconductor film 1a ... high concentration source region 1a '... Channel forming region 1b ... low concentration area 1c ... High concentration area 1d ... High-concentration drain region 1f ... Extension from the high-concentration drain region 2 ... Gate insulating film 3a ... scanning line 3b ... Capacity line 4 ... First interlayer insulating film 5 ... Second interlayer insulating film (surface protective film) 6a ... Data line 6b ... Drain electrode 7 ... uneven layer 7a ... Photosensitive resin 8 ... Reflector 8a ... Edge of reflection plate forming region 8b ... Metal film 8g: Concavo-convex pattern (surface concavo-convex shape) 9 ... Transparent electrode 9a ... Edge of transparent electrode forming region 9b ... Transparent conductive film 10 ... TFT array substrate 10 '... Glass substrate on the TFT array substrate side 11 ... Base protection film 12 ... Alignment film 13 ... Concavo-convex forming layer 13a ... Photosensitive resin 14 ... Transparent window 15 ... Contact hole 20 ... Counter substrate 20 '... Glass substrate on opposite substrate side 21 ... Counter electrode 22 ... Alignment film 23 ... Shading film 30 ... Pixel switching TFT 50 ... Liquid crystal 60 ... Storage capacity 100 ... Electro-optical device 100a ... Pixel 101 ... Data line drive circuit 102 ... Mounting terminal 103 ... Transparent window 104 ... Scan line drive circuit 105 ... Wiring 106 ... Inter-substrate conductive material 107 ... uneven layer 108 ... Reflector 108a ... Edge of forming area of reflector 108b ... Surface irregularity shape 109 ... Transparent electrode 109a ... Edge of transparent electrode forming region 110 ... TFT array substrate 112 ... Alignment film 113 ... Concavo-convex forming layer 120 ... Counter substrate

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/35 G09F 9/35 F term (reference) 2H091 FA02Y FA08X FA08Z FA11X FA11Z FA14Y FB08 FC01 FC10 FC14 FC26 GA03 GA06 GA13 HA06 HA07 HA10 LA12 LA16 2H092 GA13 GA17 GA21 HA04 HA05 HA06 JA24 JA46 KB04 KB25 MA05 MA14 MA15 MA19 MA27 NA01 NA27 NA29 PA02 5C094 AA10 AA15 AA43 AA44 BA03 BA43 CA19 EA04 EA05 EA06 EA07 EB02 HA04 ED04 FA04 EB04 ED04

Claims (9)

[Claims] 1. A pair of substrates, which are arranged to face each other while encapsulating and holding an electro-optical substance, and formed on the electro-optical substance side of one of the pair of substrates, While reflecting the incident light from the other substrate side,
An electro-optical device comprising a reflective plate having one or more transmission windows penetrating at a predetermined position for transmitting light from a back light source, and a transparent electrode formed on the upper layer side of the reflective plate. The electro-optical device is characterized in that the reflection plate and the transparent electrode are laminated in such a manner that the end portions of the respective formation regions are aligned with each other. 2. The electro-optical device according to claim 1, wherein the reflection plate has a surface uneven shape capable of scattering incident light. 3. The reflection plate is formed on a concavo-convex layer having a concavo-convex surface formed on the one substrate, and the surface concavo-convex shape of the reflector corresponds to the concavo-convex pattern of the concavo-convex layer. The electro-optical device according to claim 1, which has the above-mentioned shape. 4. The reflection plate is made of aluminum, silver, or an alloy thereof, titanium, titanium nitride, molybdenum,
The electro-optical device according to claim 1, wherein the electro-optical device is formed of a laminated film of tantalum and the like. 5. The transparent electrode is ITO (Indium)
Tin oxide) film.
The electro-optical device according to any one of 1. 6. An incident light from the other substrate side of the pair of substrates to the electro-optical substance side of one of the pair of substrates which are arranged facing each other while enclosing and holding the electro-optical substance. A method of manufacturing an electro-optical device including a step of forming a reflective plate that reflects light, and a step of forming a transparent electrode on the reflective plate, wherein a metal film is laminated on the electro-optical substance side of the one substrate. Next, a transparent conductive film is laminated on the upper side of the metal film, and then a laminate of the metal film and the transparent conductive film is patterned at the same time so that the end portions of the respective formation regions are aligned with each other, A method of manufacturing an electro-optical device, characterized in that the reflection plate and the transparent electrode are formed at the same time in a predetermined pattern in which the ends of the respective formation regions coincide with each other. 7. An uneven layer is formed on the one substrate before laminating the metal film on the one substrate, and incident light corresponding to the surface shape is scattered on the uneven layer. 7. The method for manufacturing an electro-optical device according to claim 6, wherein the metal film having a surface uneven shape capable of being formed is laminated. 8. The reflecting plate is made of aluminum or silver,
8. The method for manufacturing an electro-optical device according to claim 6, wherein an alloy thereof or a laminated film of titanium, titanium nitride, molybdenum, tantalum, or the like is used. 9. The transparent electrode is made of ITO (Indi).
9. A method of manufacturing an electro-optical device according to claim 6, wherein a film made of a (um tin oxide) film is used.