JP2003058073A - Method of manufacturing electro-optic device, electro- optic device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing on electro-optic device which can exactly align a substrate even if a thick photosensitive resin layer is formed on the substrate, the electro-optic device manufactured by this method, and an electronic apparatus having the same. SOLUTION: A photolithography technique is used in manufacturing the TFT array substrate of a liquid crystal device and in forming ruggedness forming layers 13a consisting of a first photosensitive resin 7 to prescribed patterns, alignment marks 350 made of a photosensitive resin are simultaneously formed on the large-sized substrate 10' and after the ruggedness forming layers 13a are formed, the formation of contact holes to an interlayer insulating film 5 and the formation of an upper layer film 7a consisting of a second photosensitive resin 7, a reflection film 8a and pixel electrodes 9 are performed by using the photolithography technique on the upper layer side while the alignment of the large-sized substrate 10' is performed by utilizing the alignment marks 350 made of the photosensitive resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electro-optical device in which an electro-optical material is held on a substrate, an electro-optical device manufactured by this method, and electronic equipment using the same.

[0002]

2. Description of the Related Art Electro-optical devices such as liquid crystal devices are used as direct-view type or projection type display devices for various equipment. In such an electro-optical device, for example, in a liquid crystal device, as shown in FIG. 18, a TFT array substrate 10 and a counter substrate 20 which are arranged to face each other are bonded with a sealing material, and a sealing material is used between the substrates. The liquid crystal 50 as an electro-optical material is held in the area partitioned by.
Further, in the active matrix type liquid crystal device 100, the pixel switching TFTs 30 and the pixel electrodes 9 a are formed in a matrix on the TFT array substrate 10.

In the reflective or semi-transmissive / semi-reflective active matrix type liquid crystal device 100, light is reflected to reflect the external light incident from the counter substrate 20 side toward the counter substrate 20. Pixel electrode 9 with transparent film 8a
It is formed on the lower layer side of a, and light incident from the counter substrate 20 side is reflected on the TFT array substrate 10 side, and an image can be displayed by the light emitted from the counter substrate 10 side.

In such a reflective or semi-transmissive / semi-reflective liquid crystal device 100, if the directionality of the light reflected by the light reflecting film 8a is strong, the viewing angle such that the brightness varies depending on the angle at which the image is viewed. Dependency becomes noticeable.

Therefore, conventionally, in manufacturing the TFT array substrate 10, as shown in FIG. 19A, after forming the TFT 30, an acrylic resin is formed on the surface of the second interlayer insulating film 5 (surface protective film). As shown in FIG. 19B, the first photosensitive resin 13 such as the above is applied thickly, and then the first photosensitive resin 13 is exposed through the exposure mask 510, developed, and baked. Then, a concavo-convex forming layer 13a having a predetermined pattern is formed, and the concavo-convex forming layer 13a forms a concavo-convex pattern 8g on the surface of the light reflection film 8a formed on the upper side thereof (see FIG. 18).

Further, as shown in FIG. 19C, a second acrylic resin or the like is also formed on the upper layer side of the concavo-convex forming layer 13a.
After applying the photosensitive resin 7 of, the second photosensitive resin 7 is exposed and developed through the exposure mask 520,
As shown in FIG. 19D, the upper layer film 7a is formed, and
As shown in FIG. 8, the edges of the unevenness forming layer 13a are prevented from appearing in the unevenness pattern 8g.

In the liquid crystal device 100 having such a structure, generally, the TFT array substrate 10 and the counter substrate 20 are
After each component is formed in the state of a large-sized substrate capable of taking a large number of sheets, the large-sized substrates are bonded to each other to form a large-sized panel structure, and the panel structure is cut to obtain a single liquid crystal device 100. In the case of the TFT array substrate 10, this state is expressed as schematically shown in FIG. Although each layer is formed into a predetermined pattern by photolithography, each layer is shown in a solid sheet in FIG. 20 for the purpose of easy understanding of how each layer is laminated on the surface of a large substrate. It is represented by.

As shown in FIG. 20, the T of the liquid crystal device 100 is
When manufacturing the FT array substrate 10, the photolithography technique is applied to the large substrate 10 ′,
A plurality of thin films forming the TFT 30, the first photosensitive resin 1
The concavo-convex forming layer 13a made of No. 3, the upper layer film 7a made of the second photosensitive resin 7, the reflective film 8a, and the pixel electrode 9a are formed in this order. At this time, for example, when the gate electrode of the TFT 30 (scanning line 3a / see FIG. 18) is formed by the photolithography technique so as not to shift the formation position of each layer, the large electrode 10 ′ may have four corners, etc. 21
An alignment mark 300 having a shape as shown in (A) is formed, and the alignment of the large substrate 10 ′ is performed by using this alignment mark 300.

[0009]

In such a manufacturing process, after forming the TFT 30 and the alignment mark 300, further, FIGS. 19 (A), 19 (B), and 20.
As shown in FIG. 3, an unevenness forming layer 13a made of the first photosensitive resin 13 is formed on the upper side thereof. Therefore, when further forming each layer on the upper layer side of the unevenness forming layer 13a, the first
The alignment mark 300 is confirmed through the photosensitive resin 13 and the large substrate 10 'is aligned. Here, the first photosensitive resin 7 is for forming irregularities, and therefore is considerably thick. Therefore, when the alignment mark 300 is viewed through the first photosensitive resin 7, FIG.
As shown in FIG. 2, the alignment mark 300 is unclear and its shape cannot be accurately recognized, so that the large substrate 1
There is a problem that the 0'alignment cannot be performed accurately.

In view of the above problems, the object of the present invention is to
Provided are a method for manufacturing an electro-optical device capable of accurately performing alignment of a substrate even when a thick photosensitive resin layer is formed on the substrate, an electro-optical device manufactured by this method, and an electronic device including the same. It is in.

[0011]

In order to solve the above problems, in the first embodiment of the present invention, a plurality of layers including at least a photosensitive resin layer are formed on the surface of a substrate holding an electro-optical substance. In a method of manufacturing an electro-optical device formed by stacking in a predetermined pattern, when forming the photosensitive resin layer in a predetermined pattern by using a photolithography technique, an alignment mark made of a photosensitive resin is formed at the same time, and photolithography is performed. When another film is formed on the upper layer side of the photosensitive resin layer by using a technique, the alignment mark of the photosensitive resin is used to align the substrate.

In the present invention, the photosensitive resin layer is, for example, a concavo-convex forming layer for imparting a concavo-convex pattern for light scattering to the surface of the light reflecting film formed on the upper side of the photosensitive resin layer. .

According to the present invention, when the photosensitive resin layer is formed into a predetermined pattern by using the photolithography technique, the alignment mark made of the photosensitive resin is simultaneously formed. Therefore, when forming another film on the upper layer side of the photosensitive resin layer, it is not necessary to check the alignment mark formed on the lower layer side through the photosensitive resin layer. Even if the lower layer side alignment mark cannot be accurately recognized through the photosensitive resin layer, the substrate can be aligned using the alignment mark made of the photosensitive resin. Therefore, even if a thick photosensitive resin layer is formed on the substrate, the substrate can be accurately aligned.

In the present invention, when a conductive film is formed in a predetermined pattern below the photosensitive resin layer by using a photolithography technique, an alignment mark made of the conductive film is simultaneously formed so that the photosensitive resin layer is formed. When forming
The substrate is aligned using the alignment mark made of the conductive film.

According to the second aspect of the present invention, a method of manufacturing an electro-optical device in which a plurality of layers including at least a photosensitive resin layer are laminated in a predetermined pattern on a surface of a substrate holding an electro-optical material. In, when forming a conductive film in a predetermined pattern below the photosensitive resin layer using a photolithography technique, an alignment mark made of a conductive film is simultaneously formed, and the upper layer of the conductive film is formed using a photolithography technique. When forming the photosensitive resin layer in a predetermined pattern on the side, the photosensitive resin layer is formed avoiding the alignment mark made of the conductive film, and the upper layer of the photosensitive resin layer is formed by using photolithography technology. When another film is formed in a predetermined pattern on the side, the alignment of the substrate is performed using the alignment mark made of the conductive film.

In the present invention, when the conductive film is formed in a predetermined pattern below the photosensitive resin layer by using the photolithography technique, alignment marks made of the conductive film are simultaneously formed and the photosensitive resin layer is formed. When forming, the photosensitive resin layer is formed while avoiding the alignment mark made of the conductive film. Therefore, when forming another film on the upper layer side of the photosensitive resin layer, even if the photosensitive resin layer is thick, it is possible to directly confirm the alignment mark made of the conductive film and perform substrate alignment, The substrate can be accurately aligned.

Also in this embodiment, the photosensitive resin layer is
For example, it is a concavo-convex forming layer for providing a concavo-convex pattern for light scattering on the surface of the light reflecting film formed on the upper layer side of the photosensitive resin layer.

In the present invention, when forming the photosensitive resin layer while avoiding the alignment mark made of the conductive film, a window for exposing the alignment mark made of the conductive film may be formed in the photosensitive resin layer. Good.

Here, it is preferable that the window has a planar shape that can be used as an alignment mark.

In the present invention, when another film is formed on the upper side of the photosensitive resin layer by using the photolithography technique, the alignment mark of the conductive film may be used to align the substrate. .

Further, in the present invention, when another conductive film is formed in a predetermined pattern on the upper layer side of the photosensitive resin layer, the alignment mark of the conductive film is used to align the substrate. When the another photosensitive resin layer is formed in a predetermined pattern on the upper side of the photosensitive resin layer, the window may be used as an alignment mark to align the substrate.

In the present invention, the another photosensitive resin layer is, for example, an upper layer film which is formed so as to cover the concavo-convex forming layer and smoothes the shape of the concavo-convex pattern.

In any of the embodiments of the present invention, the alignment mark made of the conductive film is formed at the same time as the conductive film forming the electrode or the wiring when the thin film element for pixel sching is formed on the substrate. .

In the present invention, the electro-optical material is, for example, liquid crystal. In this case, the single substrate is used as a first substrate, and a second substrate is arranged so as to face the first substrate to hold liquid crystal as the electro-optical substance between the substrates.

The electro-optical device to which the present invention is applied can be used as a display device of electronic equipment such as a mobile phone and a mobile computer.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

[First Embodiment] (Basic Structure of Electro-Optical Device) FIG. 1 shows a liquid crystal device as an electro-optical device according to a first embodiment of the present invention as viewed from the counter substrate side together with each component. 2 is a plan view of FIG.
FIG. 3 is a sectional view taken along line HH ′ of FIG. 1. FIG. 3 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display area of the liquid crystal device. The basic structure of the liquid crystal device to which the present invention is applied is as shown in FIG.
Since it is the same as that described with reference to FIGS. 8 to 21, parts having common functions will be described with the same reference numerals. Further, in each drawing used for the description of the present embodiment, each layer and each member have different scales so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1 and FIG. 2, the liquid crystal device 100 (electro-optical device) of this embodiment is a TFT array substrate 10.
The (first substrate) and the counter substrate 20 (second substrate) are adhered to each other by the sealing material 52, and the liquid crystal 50 serving as an electro-optical substance is provided in a region (liquid crystal enclosed region) partitioned by the sealing material 52. Are pinched. Seal material 52
A peripheral parting line 53 made of a light-shielding material is formed in the inside region of the formation region of the, and the inside region of the peripheral parting line 53 is the image display region 10a.

In the present embodiment, the data line driving circuit 101 and the mounting terminal 10 are utilized by utilizing the outer region of the sealing material 52.
2 are formed along one side of the TFT array substrate 10, and the scanning line driving circuit 104 is formed on the two sides adjacent to the one side by utilizing the region between the image display region 10a and the sealing material 52. Has been done. TFT array substrate 10
On the remaining side, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area 10a pass through the lower layer side of the sealing material 52. In addition, a precharge circuit or a test circuit may be provided using the lower layer side of the peripheral parting line 53 and the like. In addition, TF is provided at least at one of the corners of the counter substrate 20.
An inter-substrate conductive material 106 is formed to establish electrical conduction between the T array substrate 10 and the counter substrate 20.

Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TA on which a driving LSI is mounted is mounted.
A B (tape automated, bonding) substrate may be electrically and mechanically connected to a terminal group formed on the periphery of the TFT array substrate 10 via an anisotropic conductive film. In the liquid crystal device 100, depending on the type of the liquid crystal 50 used, that is, an operation mode such as a TN (twisted nematic) mode or an STN (super TN) mode, or a normally white mode / a normally black mode, Although a film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction, they are not shown here.

When the liquid crystal device 100 is configured for color display, an RGB color filter is provided in a region of the counter substrate 20 facing each pixel electrode (to be described later) of the TFT array substrate 10 together with its protective film. Form.

In the liquid crystal device 100, the image display area 1
0a, as shown in FIG. 3, a plurality of pixels 100a are arranged in a matrix. A pixel electrode 9a and a pixel switching TFT 30 for driving the pixel electrode 9a are formed in each of these pixels 100a, and a data line 6a for supplying pixel signals S1, S2 ... Sn is formed. It is electrically connected to the source of the TFT 30. Pixel signals S1 and S2 to be written to the data line 6a
... Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. In addition, the TFT 30
The scanning line 3a is electrically connected to the gate of the scanning line 3a, and the scanning signal G is pulsed to the scanning line 3a at a predetermined timing.
1, G2 ... Gm are line-sequentially applied in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by turning on the TFT 30, which is a switching element, for a certain period of time, the pixel signals S1, S2, ...
..Writing Sn to each pixel at a predetermined timing. The predetermined level pixel signals S1, S2, ... Sn written in the liquid crystal through the pixel electrode 9a in this manner are held for a certain period between the pixel signal S1, S2, ... Sn and the counter electrode 21 of the counter substrate 20 shown in FIG. .

Here, in the liquid crystal 50, the orientation and order of the molecular assembly are changed by the applied voltage level,
Modulates light and enables gradation display. In the normally white mode, the amount of incident light passing through the liquid crystal 50 portion decreases according to the applied voltage, and in the normally black mode, the incident light changes according to the applied voltage. The amount of light passing through the liquid crystal 50 increases. As a result, light having a contrast according to the pixel signals S1, S2, ... Sn is emitted from the liquid crystal device 100 as a whole.

The pixel signals S1, S2, ...
.. In order to prevent Sn from leaking, the storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the liquid crystal device 100 having a high contrast ratio can be realized. As a method of forming the storage capacitor 60, as shown in FIG. 3, when the storage capacitor 60 is formed between the storage capacitor 60 and the capacitance line 3b, which is a wiring for forming the storage capacitor 60, or when it is formed with the preceding scanning line 3a. Either may be formed between them.

(Structure of TFT array substrate 10) FIG.
TFT array substrate 10 used in the liquid crystal device 100 of the present embodiment
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other. FIG. 5 is a cross-sectional view when a part of the pixels of the liquid crystal device 100 is cut at a position corresponding to the line AA ′ in FIG.

In FIG. 4, a plurality of transparent ITO (Indium Tin Ox) are formed on the TFT array substrate 10.
The pixel electrodes 9a made of a (ide) film are formed in a matrix, and the pixel switching TFTs 30 are connected to the respective pixel electrodes 9a. Also,
The data line 6a, the scanning line 3a, and the capacitance line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30
Are connected to the data line 6a and the scanning line 3a. That is, the data line 6a is electrically connected to the high concentration source region 1d of the TFT 30 via the contact hole, and the pixel electrode 9a is connected to the TFT via the contact hole.
3 is electrically connected to the high-concentration drain region 1e.
Further, the scanning line 3a extends so as to face the channel region 1a 'of the TFT 30. The storage capacitor 60 (storage capacitor element) has a lower electrode that is obtained by rendering the extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30 conductive, and the lower electrode 41 has the same layer as the scanning line 3b. The capacitor line 3b has a structure overlapping as an upper electrode.

In each of the pixels 100a thus constructed, of the area where the pixel electrode 9a is formed, the area surrounded by the alternate long and short dash line 8'is a transmissive area for displaying in the transmissive mode and will be described later. The concavo-convex forming layer and the light reflecting film are not formed, and the other region is a reflecting region provided with the concavo-convex forming layer and the light reflecting film which will be described later, and display is performed in the reflection mode here.

As shown in FIG. 5, the cross section of the reflective area taken along the line AA 'is, as shown in FIG. 5, on the surface of the TFT array substrate 10, a base protective film made of a silicon oxide film (insulating film) having a thickness of 50 nm to 100 nm. 11 is formed, and an island-shaped semiconductor film 1a having a thickness of 50 nm to 100 nm is formed on the surface of the base protective film 11. A gate insulating film 2a made of a silicon oxide film having a thickness of about 50 to 100 nm is formed on the surface of the semiconductor film 1a, and a scan made of an aluminum film having a thickness of 500 nm to 1000 nm is formed on the surface of the gate insulating film 2a. The line 3a passes through as a gate electrode. The region of the semiconductor film 1a facing the scanning line 3a via the gate insulating film 2a is the channel region 1
It is a '. A source region including a low concentration source region 1b and a high concentration source region 1d is formed on one side of the channel region 1a ', and a drain including a low concentration drain region 1c and a high concentration drain region 1e is formed on the other side. A region is formed.

On the surface side of the pixel switching TFT 30, a first interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm and a thickness of 100 nm to 100 nm are formed.
Second interlayer insulating film 5 made of a 300 nm silicon nitride film
(Surface protection film) is formed. A data line 6a made of an aluminum film having a thickness of 500 nm to 1000 nm is formed on the surface of the first interlayer insulating film 4, and the data line 6a passes through a contact hole formed in the first interlayer insulating film 4. It is electrically connected to the high concentration source region 1d. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and the drain electrode 6b is a high-concentration drain region via a contact hole formed in the first interlayer insulating film 4. It is electrically connected to 1e.

On the upper layer of the second interlayer insulating film 5, as will be described later, a concavo-convex forming layer 13a made of a photosensitive resin such as acrylic resin and an upper layer film 7a are formed in this order, and on the surface of the upper layer film 7a. A light reflection film 8a made of an aluminum film or the like having a thickness of 50 nm to 200 nm is formed.

On the upper layer of the light reflecting film 8a, a transparent pixel electrode 9a made of an ITO film is formed. Pixel electrode 9a
Are laminated directly on the surface of the light reflection film 8a, and the pixel electrode 9
a and the light reflection film 8a are electrically connected. Also,
The pixel electrode 9a is exposed through the second photosensitive resin 7 forming the upper layer film 7a, the first photosensitive resin 7 forming the concavo-convex forming layer 13a, and the contact hole formed in the second interlayer insulating film 5. It is electrically connected to the drain electrode 6b.

An alignment film 12 made of a polyimide film is formed on the surface side of the pixel electrode 9a. This alignment film 12
Is a film obtained by rubbing a polyimide film.

Further, with respect to the extended portion 1f (lower electrode) extending from the high-concentration drain region 1e, the scanning line 3a is interposed via the insulating film (dielectric film) formed simultaneously with the gate insulating film 2a.
The storage capacitor 60 is formed by the capacitance lines 3b in the same layer facing each other as upper electrodes.

The TFT 30 preferably has the LDD structure as described above, but has the offset structure in which the impurity ions are not implanted into the regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. May be. Further, the TFT 30 may be a self-alignment type TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting high-concentration impurity ions using the gate electrode (a part of the scanning line 3a) as a mask. .

Further, in the present embodiment, only one gate electrode (scanning line 3a) of the TFT 30 is arranged between the source and drain regions, but two or more gate electrodes are arranged between them. You may. At this time, the same signal is applied to each gate electrode.
By configuring the TFT 30 with a dual gate (double gate) or a triple gate or more in this way, it is possible to prevent a leak current at the junction between the channel and the source-drain region, and reduce the off-time current. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

(Structure of Concavo-convex Pattern) As shown in FIG. 5, in each pixel 100a in the image display area 10a of the TFT array substrate 10, the TFT of the surface of the light reflection film 8a is formed.
An uneven pattern 8g having a convex portion 8b and a concave portion 8c is formed in a region (light reflecting film forming region / see FIG. 4) outside the forming region of 30.

To form such a concavo-convex pattern 8g, in the TFT array substrate 10 of the present embodiment, a region of acrylic resin or the like is formed in a region of the lower layer side of the light reflection film 8a, which overlaps with the light reflection film 8a in plan view. The unevenness forming layer 13a made of the first photosensitive resin 13 is formed thicker on the surface of the second interlayer insulating film 5, and the upper surface of the unevenness forming layer 13a is also covered with the second photosensitive resin 7 such as acrylic resin. The upper layer film 7a is formed thicker. Therefore, the light reflection film 8a
A concave-convex pattern 8g is formed on the surface of the concave-convex forming layer 13a due to the presence or absence of the concave-convex forming layer 13a. In the concave-convex pattern 8g, the upper layer film 7a prevents edges and the like of the concave-convex forming layer 13a. The upper layer film 7a
It may be formed by only the unevenness forming layer 13a without forming the.

(Structure of Counter Substrate 20) In the counter substrate 20, the pixel electrodes 9 formed on the TFT array substrate 10 are formed.
A light-shielding film 23 called a black matrix or a black stripe is formed in a region facing the vertical and horizontal boundary regions of a, and a counter electrode 21 made of an ITO film is formed on the upper layer side thereof. An alignment film 22 made of a polyimide film is formed on the upper layer side of the counter electrode 21, and the alignment film 22 is a film obtained by subjecting the polyimide film to a rubbing treatment.

(Display Operation of Liquid Crystal Device 100) In the liquid crystal device 100 thus configured, the light reflecting film 8a made of an aluminum film or the like is formed below the pixel electrode 9a. For this reason, the light incident from the side of the counter substrate 20 is converted into TF.
Since the light can be reflected on the T array substrate 10 side and emitted from the counter substrate 20 side, if light modulation is performed for each pixel 100a by the liquid crystal 50 during this time, external light can be used to obtain a desired image in the image display region 10a. Images can be displayed (reflection mode).

In the liquid crystal device 100, the light reflection film 8a is arranged so as to avoid the area surrounded by the alternate long and short dash line 8'in FIG.
Since it is formed, it also functions as a semi-transmissive / semi-reflective liquid crystal device. That is, the light emitted from the backlight device (not shown) arranged on the TFT array substrate 10 side is incident on the TFT array substrate 10 side, and then the pixel electrode 9a is formed in each pixel 100a. Among the regions, the light is transmitted to the counter substrate 20 side through the transmissive region where the light reflection film 8a is not formed. Therefore, the liquid crystal 50
When the light modulation is performed for each pixel 100a by the image display area 10 using the light emitted from the backlight device.
A desired image can be displayed on a (transmission mode).

Further, in the present embodiment, the unevenness forming layer 13a is formed in a region of the lower layer side of the light reflecting film 8a which overlaps the light reflecting film 8a in plan view, and the unevenness formed by this unevenness forming layer 13a is used. Then, an uneven pattern 8g for light scattering is formed on the surface of the light reflection film 8a. Further, in the concavo-convex pattern 8g, the upper layer film 7a prevents the edges of the concavo-convex forming layer 13a from appearing. Therefore, when the image is displayed in the reflection mode, the image can be displayed by the scattered reflected light, so that the viewing angle dependency is small.

(Schematic Description of Manufacturing Method of Liquid Crystal Device 100)
In the liquid crystal device 100 having such a configuration, generally, after forming the respective constituent elements on a large-sized substrate capable of taking a large number of TFT array substrates 10 and counter substrates 20, the large-sized substrates are bonded to each other to form a large-sized panel structure. And after that,
This large-sized panel structure is cut into a single liquid crystal device 100.
To get This state is represented as schematically shown in FIG. 6 in the case of the TFT array substrate 10, for example.

FIG. 6 is an explanatory view showing a state in which each layer is formed in multiple layers on a large-sized substrate which constitutes the TFT array substrate 10 of this embodiment. 7A and 7B are explanatory views showing the planar shape of the alignment mark formed on the large-sized substrate. Although each layer is formed into a predetermined pattern by photolithography, each layer is shown as a solid sheet in FIG. 6 for the purpose of clearly showing how each layer is laminated on the surface of a large substrate. It is represented by.

As shown in FIG. 6, the TF of the liquid crystal device 100 is
In manufacturing the T-array substrate 10, each thin film forming the TFT 30 is formed by using a photolithography technique on a large-sized substrate 10 'capable of taking a large number of TFT array substrates 10 used in a single liquid crystal device 100. The concavo-convex forming layer 13a made of the first photosensitive resin 13, the upper layer film 7a made of the second photosensitive resin 7, the reflective film 8a, and the pixel electrode 9a are formed in this order. Here, when the gate electrodes (scanning lines 3a) of the TFTs 30 are formed by the photolithography technique so that the formation positions of the respective layers in the respective thin films forming the TFTs 30 are not deviated, the large electrodes are formed on the four corners of the large-sized substrate 10 'in FIG. After forming the alignment mark 300 made of a conductive film having a shape as shown in FIG. 3) simultaneously and forming the gate electrode (scanning line 3a) of the TFT 30, the alignment mark 300 made of the conductive film is used to align the large substrate 10 '. While performing, a contact hole is formed in the interlayer insulating film, and a source electrode (data line 6a) and a drain electrode 6b are formed on the upper layer side thereof by using a photolithography technique.

Further, in this embodiment, the concavo-convex forming layer 1 made of the first photosensitive resin 13 is formed by using the photolithography technique.
When forming 3a in a predetermined pattern, for example, at the four corners of the large-sized substrate 10 ', at positions overlapping the alignment marks 300 made of a conductive film, an alignment made of a photosensitive resin having a shape as shown in FIG. 7B is formed. The mark 350 is formed at the same time. After forming the concavo-convex forming layer 13a, the large-sized substrate 10 'is aligned using the alignment mark 350 made of a photosensitive resin, and the interlayer insulating film is formed on the upper layer side by using the photolithography technique. A contact hole is formed therein, and an upper layer film 7a made of the second photosensitive resin 7, a reflective film 8a, and a pixel electrode 9 are formed.

Therefore, when another film is formed on the upper layer side of the first photosensitive resin 13 and the concavo-convex forming layer 13a, the alignment of the conductive film formed on the lower layer side through the first photosensitive resin 13 is formed. It is not necessary to check the mark 300. Therefore, even if the first photosensitive resin 13 is thick and the alignment mark 300 made of the conductive film cannot be surely confirmed, the alignment of the large substrate 10 ′ can be performed using the alignment 350 made of the photosensitive resin. Because you can
Each layer can be formed with high positional accuracy.

(Detailed Description of Manufacturing Method of Liquid Crystal Device 100)
With reference to FIGS. 8 to 12, the liquid crystal device 100 according to the present embodiment.
A method of manufacturing the TFT array substrate 10 used in the above will be described in detail.
8 to 12 are process cross-sectional views showing the method for manufacturing the TFT array substrate 10 according to the present embodiment. In any of the drawings, the image display region 10a (pixel switching TFT formation region, light reflection film formation) is formed. Area), and a cross section in the formation area of the alignment marks 300 and 350.

First, as shown in FIG. 8 (A), after preparing a large substrate 10 'made of glass or the like that has been cleaned by ultrasonic cleaning or the like, under the temperature condition of the substrate temperature of 150 ° C to 450 ° C, A base protective film 11 made of a silicon oxide film is formed on the entire surface of the large-sized substrate 10 'by a plasma CVD method to a thickness of 50 nm to 1
It is formed to a thickness of 00 nm. The raw material gas at this time is, for example, a mixed gas of monosilane and laughing gas or TE.
OS and oxygen, or disilane and ammonia can be used.

Next, under the temperature condition of the substrate temperature of 150 ° C. to 450 ° C., the semiconductor film 1 made of an amorphous silicon film is formed on the entire surface of the large-sized substrate 10 ′ by the LP-CVD method.
It is formed to a thickness of 0 nm to 100 nm. Next, the semiconductor film 1 is irradiated with laser light to perform laser annealing.
As a result, the amorphous semiconductor film 1 melts once,
It crystallizes through a cooling and solidification process. At this time, the irradiation time of the laser beam to each area is very short, and the irradiation area is local to the entire substrate, so that the entire substrate is not heated to a high temperature at the same time. Therefore, even if a glass substrate or the like is used as the large substrate 10 ', deformation or cracking due to heat does not occur.

Next, a resist mask 551 is formed on the surface of the semiconductor film 1 by using a photolithography technique, and the semiconductor film 1 is etched through the resist mask 551, as shown in FIG. 8B. The island-shaped semiconductor film 1a (active layer) is left in a predetermined area of the image display area 10a.

Next, under a temperature condition of 350 ° C. or lower, a gate insulating film 2 made of a silicon oxide film or the like is formed on the entire surface of the large substrate 10 ′ by a CVD method or the like to have a thickness of 50 nm to 100 nm.
To the thickness of. The source gas at this time is, for example, T
A mixed gas of EOS and oxygen gas can be used.
The gate insulating film 2 formed here may be a silicon nitride film instead of the silicon oxide film.

Next, although not shown, impurity ions are implanted into the extended portion 1f of the semiconductor film 1a through a predetermined resist mask to form a storage capacitor 60 between the impurity line and the capacitance line 3b. Form electrodes.

Next, as shown in FIG. 8C, a conductive film 3 made of an aluminum film or the like for forming the scanning lines 3a or the like is formed on the entire surface of the large substrate 10 'by a sputtering method or the like to have a thickness of 500 nm to 1000 nm. Then, a resist mask 552 is formed using a photolithography technique.

Although not shown in the drawings up to this point, the alignment between the large substrate 10 'and the exposure mask is performed using the alignment marks provided on the large substrate 10'.

Next, the conductive film 3 is dry-etched through the resist mask 552, and as shown in FIG.
The scanning line 3a (gate electrode), the capacitance line 3b, etc. are formed. At this time, the alignment mark 300 made of a conductive film is simultaneously formed.

Next, on the side of the pixel TFT section and the N-channel TFT section (not shown) of the drive circuit, using the scanning line 3a and the gate electrode as a mask, about 0.1 × 10 ¹³ / cm ² to
By implanting low-concentration impurity ions (phosphorus ions) at a dose of about 10 × 10 ¹³ / cm ² , the low-concentration source region 1b and the low-concentration drain region 1c are formed in a self-aligned manner with respect to the scanning line 3a. Here, since it is located directly below the scanning line 3a, the portion into which the impurity ions are not introduced becomes the channel region 1a 'which remains the semiconductor film 1a.

Next, as shown in FIG. 9A, the pixel TF
At the T portion, a resist mask 553 wider than the scanning line 3a (gate electrode) is formed to add high concentration impurity ions (phosphorus ions) to about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 5.
Implanting with a dose amount of ¹⁵ / cm ² and high-concentration source region 1
b and the drain region 1d are formed. In this step, when the resist mask 553 is formed, the large substrate 10 'is formed by using the alignment mark 300 made of a conductive film.
And the exposure mask are aligned.

Instead of these impurity introduction steps, a high-concentration impurity (phosphorus ion) is implanted with a resist mask wider than the gate electrode formed without implanting a low-concentration impurity, and the source region of the offset structure is formed. And the drain region may be formed. Further, it goes without saying that a source region and a drain region having a self-aligned structure may be formed by implanting a high-concentration impurity using the scanning line 3a as a mask.

Although not shown, the N-channel TFT portion of the peripheral drive circuit portion is formed by such a process, but at this time, the P-channel TFT portion is covered with a mask. Further, when forming the P-channel TFT portion of the peripheral drive circuit, the pixel portion and the N-channel TFT portion are covered and protected with a resist, and the gate electrode is used as a mask to form about 0.1 × 10 ¹⁵ / cm ² to about By implanting boron ions with a dose amount of 10 × 10 ¹⁵ / cm ² , P-channel source / drain regions are formed in a self-aligned manner. At this time, as in the case of forming the N-channel TFT section, the gate electrode is used as a mask to form about 0.1 × 10 ¹³ / cm ² to about 10 × 1.
After a low concentration impurity (boron ion) is introduced at a dose of 0 ¹³ / cm ² to form a low concentration region in the polysilicon film, a mask wider than the gate electrode is formed to form a high concentration impurity (boron ion). Boron ion) about 0.1 × 10 ¹⁵ / cm ²
Approximately 10 × 10 ¹⁵ / cm ^{2 with} a dose amount of L
The source region and the drain region of the DD structure (lightly doped drain structure) may be formed. Also,
The source region and the drain region of the offset structure may be formed by implanting a high-concentration impurity (phosphorus ion) in a state where a mask wider than the gate electrode is formed without implanting a low-concentration impurity. By these ion implantation steps, CMOS can be realized and the peripheral drive circuit can be built in the same substrate.

Next, as shown in FIG. 8B, a first interlayer insulating film 4 made of a silicon oxide film or the like is formed on the entire surface of the large substrate 10 'by a CVD method or the like to a thickness of 300 nm to 800 nm.
To the thickness of. The source gas at this time is, for example, T
A mixed gas of EOS and oxygen gas can be used.

Next, a resist mask 554 is formed by using the photolithography technique. In this step, when the resist mask 554 is formed, the alignment mark 300 made of a conductive film is used to align the large substrate 10 'with the exposure mask.

Next, the first mask is formed through the resist mask 554.
The interlayer insulating film 4 is dry-etched, and contact holes are formed in the first interlayer insulating film 4 in portions corresponding to the source region and the drain region, respectively, as shown in FIG. 9C.

Next, as shown in FIG. 9D, a conductive film 6 made of an aluminum film or the like for forming the data line 6a (source electrode) or the like is formed on the surface side of the first interlayer insulating film 4.
Is formed to a thickness of 500 nm to 1000 nm by a sputtering method or the like, and then a resist mask 555 is formed by using a photolithography technique. In this process, when the resist mask 555 is formed, the alignment mark 300 made of a conductive film is used to align the large substrate 10 'with the exposure mask.

Next, the conductive film 6 is dry-etched through the resist mask 555 to form the data line 6a and the drain electrode 6b as shown in FIG.

Next, as shown in FIG. 10B, a second interlayer insulating film 5 made of a silicon nitride film or the like is formed on the entire surface of the large-sized substrate 10 'by a CVD method or the like to a thickness of 100 nm to 300 n.
After being formed to a film thickness of m, a resist mask 556 for forming a contact hole or the like is formed in the second interlayer insulating film 5 by using a photolithography technique. In this step, when forming the resist mask 556, the large substrate 1 is formed by using the alignment mark 300 made of a conductive film.
The alignment between 0'and the exposure mask is performed.

Next, the second mask is formed through the resist mask 556.
Dry etching is performed on the inter-layer insulating film 5, and then, as shown in FIG.
As shown in, a contact hole is formed in a portion of the second interlayer insulating film 5 corresponding to the drain electrode 14.

Next, as shown in FIG. 11 (A), a first photosensitive resin 13 such as acrylic resin is applied to the entire surface of the large-sized substrate 10 ′ to a thickness of 2 μm to 3 μm, and then the photosensitive resin 13 is applied. By patterning using a photolithography technique, as shown in FIG. 11B, the concavo-convex forming layer 13a is formed on the lower layer side of the light reflection film 8a in a region that planarly overlaps with the light reflection film 8a. . At this time, the alignment mark 350 made of a photosensitive resin is simultaneously formed.
In this step, the conductive film alignment mark 30 is formed.
0 is used to align the large substrate 10 ′ with the exposure mask 510.

When the concavo-convex forming layer 13a is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 13. However, in FIG. The case of the positive type is illustrated as the resin 13, and the portion where the photosensitive resin 13 is to be removed is irradiated with ultraviolet rays through the light transmitting portion 511 of the exposure mask 510.

Next, as shown in FIG. 11C, a second photosensitive resin 7 made of acrylic resin is formed to a thickness of 1 to 2 μm on the surface side of the second interlayer insulating film 5 and the concavo-convex forming layer 13a. After the application, the photosensitive resin 7 is patterned by using the photolithography technique.
As shown in (D), an upper layer film 7a having a contact hole is formed. In this step, the alignment mark 350 made of a photosensitive resin is used to align the large substrate 10 'and the exposure mask 520.

When the upper layer film 7a is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 7. However, in FIG. The case where the resin 7 is a positive type is shown as an example, and the portion where the photosensitive resin 7 is to be removed is irradiated with ultraviolet rays through the light transmitting portion 521 of the exposure mask 520.

Here, since the upper layer film 7a is formed of a resin material having fluidity, the upper layer film 7a appropriately cancels the unevenness of the unevenness forming layer 13a. Therefore, on the surface of the light reflection film 8a which will be formed later, the uneven pattern 8g having no edge and having a smooth shape is formed. The upper layer film 7
It is also possible to use only the concavo-convex pattern 8g without forming a.

Next, as shown in FIG. 12A, 500 n of a metal film 8 having a reflectivity such as an aluminum film is formed on the entire surface of the large-sized substrate 10 'by a sputtering method or the like.
After forming to a thickness of m to 1000 nm, a resist mask 557 is formed using a photolithography technique. In this step, when the resist mask 557 is formed, the alignment mark 350 made of a photosensitive resin is used to align the large substrate 10 'and the exposure mask.

Next, the metal film 8 is etched through the resist mask 557, and as shown in FIG.
The light reflecting film 8a is left in a predetermined area. On the surface of the light reflection film 8a thus formed, the concavo-convex pattern 8g of 500 nm or more, further 800 nm or more is formed by the concavo-convex forming layer 13a, and the concavo-convex pattern 8g is formed.
Has a gentle shape with no edges due to the upper layer film 7a.

Next, as shown in FIG. 12C, IT having a thickness of 40 nm to 200 nm is provided on the surface side of the light reflecting film 8a.
After forming the O film 9 by a sputtering method or the like, a resist mask 558 is formed by using a photolithography technique. In this step, when the resist mask 558 is formed, the alignment mark 350 made of a photosensitive resin is used to align the large substrate 10 'with the exposure mask.

Next, IT is performed through the resist mask 558.
By etching the O film 9, as shown in FIG. 12D, the pixel electrode 9a electrically connected to the drain electrode 6b is formed.
To form.

Thereafter, as shown in FIG. 5, a polyimide film (alignment film 12) is formed on the surface side of the pixel electrode 9a. To this end, a polyimide varnish prepared by dissolving 5 to 10% by weight of polyimide or polyamic acid in a solvent such as butyl cellosolve or n-methylpyrrolidone is flexographically printed, and then heated and cured (baked). Then, the substrate on which the polyimide film is formed is rubbed in a certain direction with a puff cloth made of rayon fibers to arrange the polyimide molecules in a certain direction near the surface. As a result, the liquid crystal molecules are aligned in a certain direction due to the interaction between the liquid crystal molecules filled later and the polyimide molecules.

As a result, a large substrate 10 'capable of taking a large number of TFT array substrates 10 is completed.

With respect to the large-sized substrate 10 'thus manufactured, a large-sized panel structure is formed by bonding the large-sized substrate 10' and a large-sized substrate capable of taking a large number of counter substrates 20 together with a sealing material 52 interposed therebetween. Cut the structure into single piece sizes. Also in this cutting step, the alignment mark 350 made of a photosensitive resin is used to align the large panel structure with the cutting device.

[Second Embodiment] FIG. 13 shows the TF of this embodiment.
FIG. 4 is an explanatory diagram showing a state in which each layer is formed in a multilayer structure on a large-sized substrate forming the T array substrate 10. 14
(A) And (B) is explanatory drawing which shows the planar shape of the alignment mark formed on this large substrate. Since the basic configuration of the liquid crystal device of the present embodiment is the same as that of the first embodiment, parts having common functions are designated by the same reference numerals and their description is omitted. In addition, in FIG. 13, each layer is formed in a predetermined pattern on the large-sized substrate by a photolithography technique. However, each layer is solid for the purpose of clearly showing how each layer is laminated on the surface of the large-sized substrate. Sheet.

As shown in FIG. 13, the liquid crystal device 1 of the present embodiment.
When manufacturing the TFT array substrate 10 of 00,
Similarly to the first embodiment, a photolithography technique is applied to a large substrate 10 'capable of taking a large number of TFT array substrates 10 used in a single liquid crystal device 100.
Each thin film forming the TFT 30, the unevenness forming layer 13a made of the first photosensitive resin 7, the upper layer film 7a made of the second photosensitive resin 7, the reflective film 8a, and the pixel electrode 9a are formed in this order.

Here, when the gate electrode (scanning line 3a) of the TFT 30 is formed by the photolithography technique so that the formation position of each layer in each thin film forming the TFT 30 is not displaced, the figure is formed at four corners of the large substrate 10 '. 14
After the alignment mark 300 made of a conductive film having a shape as shown in FIG. 9A is formed at the same time and the gate electrode (scanning line 3a) of the TFT 30 is formed, the alignment mark 300 made of the conductive film is used to form the large substrate 10 '. While performing the alignment of the above, using the photolithography technique on the upper layer side, the formation of contact holes in the interlayer insulating film,
The source electrode (data line 6a) and the drain electrode 6b are formed.

Further, in this embodiment, the concavo-convex forming layer 13 made of the first photosensitive resin 7 is formed by using the photolithography technique.
When forming a in a predetermined pattern, the first photosensitive resin 13 is formed so as to avoid the positions overlapping the alignment marks 300 made of the conductive film at the four corners of the large-sized substrate 10 '. That is, when the concavo-convex forming layer 13a is formed by the first photosensitive resin 13, a window for exposing the alignment mark 300 made of a conductive film is formed in the first photosensitive resin 13 as shown in FIG. 14B. Form 360. Here, the window 360 has an alignment mark 300 made of a conductive film.
The window 36 is larger than the window 36 and has a substantially same plane shape.
0 itself has a shape that can be used as an alignment mark.

Therefore, in the present embodiment, after the concavo-convex forming layer 13a is formed, the window 360 is used as an alignment mark to perform alignment of the large-sized substrate 10 ', and the upper layer side thereof is subjected to the photolithography technique.
The upper layer film 7a is formed from the second photosensitive resin 7.

After forming the upper layer film 7a, the window 360 is formed.
While confirming the alignment mark 300 made of the conductive film from the above, using the photolithography technique, the reflective film 8a
And when forming the pixel electrode 9, the large substrate 10 is aligned.

As described above, in this embodiment, when the upper layer film 7a is formed from the second photosensitive resin 7, the window 360 of the first photosensitive resin 13 is used as an alignment mark. Further, when another film is formed on the upper layer side of the second photosensitive resin 13, the alignment mark 300 made of the conductive film is directly confirmed from the window 360 to perform the alignment of the large substrate 10 '. Therefore, the alignment of the large substrate 10 'can be performed with high accuracy.

In the present embodiment, the window 360 of the first photosensitive resin 13 is used as an alignment mark when forming the upper layer film 7a from the second photosensitive resin 7, but the upper layer film 7a is also included. When another film is formed on the upper layer side of the first photosensitive resin 13, the alignment mark 300 made of a conductive film may be directly confirmed from the window 360 to perform alignment of the large substrate 10 '.

[Other Embodiments] In any of the above embodiments, an active matrix type liquid crystal device using TFTs as pixel switching elements has been described as an example, but an active matrix type liquid crystal device using TFDs as pixel switching elements has been described. The present invention may be applied to a liquid crystal device, a passive matrix liquid crystal device, or an electro-optical device using an electro-optical substance other than liquid crystal.

[Application of Electro-Optical Device to Electronic Equipment] The reflective or semi-transmissive / semi-reflective liquid crystal device 100 configured as described above can be used as a display portion of various electronic devices. An example will be described with reference to FIGS. 15, 16 and 17.

FIG. 15 is a block diagram showing a circuit configuration of an electronic device using the electro-optical device according to the present invention as a display device.

In FIG. 15, the electronic equipment has a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal device 74. The liquid crystal device 74 also includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the liquid crystal device 100 described above can be used.

The display information output source 70 is a ROM (Read
Only Memory), RAM (Random)
A memory such as an Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like, and a display such as an image signal of a predetermined format based on various clock signals generated by the timing generator 73. Information is supplied to the display information processing circuit 71.

The display information processing circuit 71 is provided with various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and executes processing of input display information. , And supplies the image signal to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

FIG. 16 shows a mobile personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 80 shown here has a main body 82 having a keyboard 81, and a liquid crystal display unit 83. The liquid crystal display unit 83 is configured to include the liquid crystal device 100 described above.

FIG. 17 shows a mobile phone which is another embodiment of the electronic apparatus according to the present invention. The mobile phone 90 shown here has a plurality of operation buttons 91 and a display unit including the liquid crystal device 100 described above.

[0105]

As described above, according to the present invention, when the photosensitive resin layer is formed into a predetermined pattern by using the photolithography technique, the alignment mark made of the photosensitive resin is simultaneously formed. Therefore, when forming another film on the upper layer side of the photosensitive resin layer, it is not necessary to confirm the alignment mark formed on the lower layer side through the photosensitive resin layer.
Even if the photosensitive resin layer is thick and the lower layer side alignment mark cannot be accurately recognized through the photosensitive resin layer, the alignment mark made of the photosensitive resin can be used to perform substrate alignment. Therefore, even if a thick photosensitive resin layer is formed on the substrate, the substrate can be accurately aligned.

Further, in the present invention, when the conductive film is formed in a predetermined pattern on the lower layer side of the photosensitive resin layer by using the photolithography technique, the alignment mark made of the conductive film is simultaneously formed and the photosensitive resin is also formed. When forming the layer, the photosensitive resin layer is formed while avoiding the alignment mark made of the conductive film. Therefore, when forming another film on the upper layer side of the photosensitive resin layer, even if the photosensitive resin layer is thick, it is possible to directly confirm the alignment mark made of the conductive film and perform substrate alignment, The substrate can be accurately aligned.

[Brief description of drawings]

FIG. 1 is a plan view of a liquid crystal device according to Embodiment 1 of the present invention when viewed from a counter substrate side.

FIG. 2 is a sectional view taken along the line HH ′ of FIG.

FIG. 3 is an equivalent circuit diagram of various elements, wirings, etc. formed in a plurality of pixels arranged in a matrix in the liquid crystal device shown in FIG.

FIG. 4 is a plan view showing a configuration of each pixel formed in a matrix on a TFT array substrate in the liquid crystal device shown in FIG.

5 is a cross-sectional view of the liquid crystal device shown in FIG. 1 taken along the line AA ′ in FIG.

6 is an explanatory diagram showing a state in which each layer is formed in multiple layers on a large-sized substrate forming the TFT array substrate shown in FIG.

7A and 7B are explanatory views showing a planar shape of an alignment mark formed on the large-sized substrate shown in FIG.

8A to 8D are TFs of the liquid crystal device shown in FIG.
FIG. 6 is a process cross-sectional view showing the method of manufacturing the T array substrate.

9A to 9D are TFs of the liquid crystal device shown in FIG.
FIG. 9 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 8 in the method for manufacturing the T array substrate.

10A to 10C are T of the liquid crystal device shown in FIG.
FIG. 10 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 9 in the method of manufacturing the FT array substrate.

11A to 11D are T of the liquid crystal device shown in FIG.
FIG. 11 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 10 in the method of manufacturing the FT array substrate.

12A to 12D are T of the liquid crystal device shown in FIG.
FIG. 12 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 11 in the method of manufacturing the FT array substrate.

FIG. 13 is a TF of a liquid crystal device according to a second embodiment of the invention.
It is explanatory drawing which shows a mode that each layer is formed in multiple layers with respect to the large substrate which comprises a T array substrate.

14A and 14B are explanatory views showing a planar shape of an alignment mark formed on the large-sized substrate shown in FIG.

FIG. 15 is a block diagram showing a circuit configuration of an electronic device using the liquid crystal device according to the present invention as a display device.

FIG. 16 is an explanatory diagram showing a mobile personal computer as one embodiment of an electronic apparatus using the liquid crystal device according to the present invention.

FIG. 17 is an explanatory diagram of a mobile phone as an embodiment of an electronic apparatus using the liquid crystal device according to the invention.

FIG. 18 is a cross-sectional view of an image display area of a conventional liquid crystal device.

19A to 19D are process cross-sectional views showing a process of forming a photosensitive resin layer in a conventional process of manufacturing a liquid crystal device.

FIG. 20 is an explanatory diagram showing a state in which each layer is formed in multiple layers on a large-sized substrate forming a TFT array substrate of a conventional liquid crystal device.

21A and 21B are explanatory diagrams showing a planar shape of an alignment mark formed on the large-sized substrate shown in FIG.

[Explanation of symbols]

1a Semiconductor film 1a 'channel forming region 1b Low concentration source region 1c Low concentration drain region 1d high concentration source region 1e high concentration drain region 2a Gate insulating film 3a scanning line 3b Capacitance line 4 First interlayer insulating film 5 Second interlayer insulating film 6a data line 6b drain electrode 7 Second photosensitive resin that constitutes the upper layer film 7a Upper layer film 8a Light reflection film 9a Pixel electrode 10 TFT array substrate Large substrate for manufacturing 10 'TFT array substrate 10a image display area 11 Base protection film 13 First photosensitive resin that constitutes the unevenness forming layer 13a Concavo-convex forming layer 20 Counter substrate 21 Counter electrode 30 pixel switching TFT 50 liquid crystal 53 Peripheral closure 100 Liquid crystal device (electro-optical device) 100a pixel 300 Conductive film alignment mark 350 Alignment mark made of photosensitive resin 360 Window made of photosensitive resin

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) G02F 1/1343 G02F 1/1343 G09F 9/30 310 G09F 9/30 310 330 330 330Z 338 338 349 349D F term (reference) 2H088 FA16 FA18 HA02 HA03 HA08 JA05 JA13 MA20 2H092 GA51 HA06 HA12 JA24 JA46 JB63 JB67 JB68 KA05 KB23 MA05 MA08 MA13 MA27 MA30 NA29 QA07 QA10 5C094 AA43 BA03 BA43 CA19 DA14 DA15 DB01 DB15 DB15 DB01 DB15 DB05 BB11 ED02 BB02 ED11 435

Claims (14)

[Claims] 1. A method of manufacturing an electro-optical device, which comprises laminating a plurality of layers including at least a photosensitive resin layer in a predetermined pattern on a surface of a substrate holding an electro-optical material, using a photolithography technique. When forming the photosensitive resin layer in a predetermined pattern by using the photolithographic resin, an alignment mark made of the photosensitive resin is formed at the same time, and when another film is formed on the upper side of the photosensitive resin layer by using photolithography Is a method of manufacturing an electro-optical device, wherein the substrate is aligned using the alignment mark made of the photosensitive resin. 2. The photosensitive resin layer according to claim 1, wherein the photosensitive resin layer is a concavo-convex forming layer for imparting a concavo-convex pattern for light scattering to the surface of a light reflecting film formed on the upper side of the photosensitive resin layer. A method for manufacturing an electro-optical device, characterized in that 3. The alignment mark made of a conductive film is formed at the same time when the conductive film is formed in a predetermined pattern below the photosensitive resin layer by using a photolithography technique according to claim 1 or 2, A method for manufacturing an electro-optical device, characterized in that, when the photosensitive resin layer is formed, the substrate is aligned using the alignment mark made of the conductive film. 4. A method of manufacturing an electro-optical device, which comprises laminating a plurality of layers including at least a photosensitive resin layer in a predetermined pattern on a surface of a substrate holding an electro-optical material, using a photolithography technique. When a conductive film is formed in a predetermined pattern below the photosensitive resin layer, an alignment mark made of a conductive film is formed at the same time, and the photosensitive resin layer is formed on the upper side of the conductive film by using a photolithography technique. When forming into a predetermined pattern,
When the photosensitive resin layer is formed while avoiding the alignment mark made of the conductive film, and when another film is formed in a predetermined pattern on the upper layer side of the photosensitive resin layer by using a photolithography technique, A method for manufacturing an electro-optical device, comprising performing alignment of the substrate using a film alignment mark. 5. The photosensitive resin layer according to claim 4, wherein the photosensitive resin layer is a concavo-convex forming layer for imparting a concavo-convex pattern for light scattering to the surface of a light reflecting film formed on the upper side of the photosensitive resin layer. A method for manufacturing an electro-optical device, characterized in that 6. The electrical device according to claim 5, wherein, when the photosensitive resin layer is formed, a window exposing the alignment mark made of the conductive film is formed in the photosensitive resin layer. Optical device manufacturing method. 7. The method of manufacturing an electro-optical device according to claim 5, wherein the window has a planar shape that can be used as an alignment mark. 8. The alignment mark made of the conductive film as set forth in claim 7, when another conductive film is formed in a predetermined pattern on the upper layer side of the photosensitive resin layer by using a photolithography technique. When the substrate is aligned and another photosensitive resin layer is formed in a predetermined pattern on the upper side of the photosensitive resin layer by using a photolithography technique, the window is used as an alignment mark of the substrate. A method for manufacturing an electro-optical device, which comprises performing alignment. 9. The electro-optical device according to claim 8, wherein the another photosensitive resin layer is an upper layer film that is formed so as to cover the concavo-convex forming layer and smoothes the shape of the concavo-convex pattern. Device manufacturing method. 10. The alignment mark made of the conductive film according to claim 3, wherein the alignment mark made of the conductive film is formed at the same time as a conductive film forming an electrode or a wiring when a thin film element for pixel stitching is formed on the substrate. A method for manufacturing an electro-optical device, comprising: 11. The substrate according to claim 1, wherein the substrate is a first substrate, and a second substrate is disposed so as to face the first substrate, and the electro-optical substance is provided between the substrates. A method for manufacturing an electro-optical device, characterized by holding the same. 12. The method of manufacturing an electro-optical device according to claim 11, wherein the electro-optical material is liquid crystal. 13. An electro-optical device manufactured by the method defined in any one of claims 1 to 12. 14. An electronic apparatus comprising the electro-optical device defined in claim 13 as a display section.