JP2003095733A - Package for housing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem wherein heat generated during working of a semiconductor device can not be released, and thermal cracking occurs on the semiconductor device. SOLUTION: The package for housing a semiconductor device consists of a substrate 1 with a three layer structure. The upper and lower sides of an intermediate layer 1c consisting of, by weight, 40 to 70% tungsten and 30 to 60% copper are provided with the upper and lower layers 1b and 1d consisting of 25 to 35% tungsten and 65 to 75% copper, a frame-shaped insulator 2 consisting of a sintered compact obtained by sintering a formed body containing 20 to 80 vol.% of lithium silicate glass containing 5 to 30 wt.% Li2 O3 , and having a point of 40 to 800 deg.C, and 20 to 80 vol.% of a filler component consisting of at least one kind selected from quartz, cristobalite, tridymite, enstatite and forsterite, and containing at least one kind of crystal phase selected from quartz, cristobalite, tridymite, enstatite and forsterite, and a cover body 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element) or an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element is made of a metal material such as a copper-tungsten alloy or a copper-molybdenum alloy having a mounting portion on which the semiconductor element is mounted. A base body, a frame-shaped insulator made of an electrically insulating material such as an aluminum oxide sintered body attached to the upper surface of the base body so as to surround the mounting portion, and an inner peripheral portion of the frame-shaped insulator A plurality of wiring layers made of refractory metal such as tungsten, molybdenum, manganese, etc., which are adhered and led from the outer periphery to the outer peripheral portion, and a lid which is attached to the upper surface of the frame-shaped insulator and closes the hole inside the insulator. The semiconductor element is bonded and fixed to the semiconductor element mounting portion of the base body with an adhesive, and each electrode of the semiconductor element is formed on the wiring layer formed on the frame-shaped insulator through the bonding wire. Electrically Continued, and thereafter, the glass and the lid to the frame-shaped insulating member so as to close the inner hole of the frame-shaped insulator,
A semiconductor device as a product is obtained by joining them through a sealing material made of resin, a brazing material, etc., and hermetically housing the semiconductor element in a container made of a base, a frame-shaped insulator, and a lid.

In the above-mentioned package for accommodating semiconductor elements, the substrate on which the semiconductor elements are mounted is made of a metal material such as copper-tungsten alloy or copper-molybdenum alloy, and the copper-tungsten alloy or copper is used. -Molybdenum alloys and the like have a high thermal conductivity of about 180 W / mK and are excellent in thermal conductivity. Therefore, the base body can well absorb the heat generated during the operation of the semiconductor element and dissipate it into the atmosphere. By doing so, the semiconductor element is always kept at an appropriate temperature, and it is possible to effectively prevent the semiconductor element from being thermally destroyed or the characteristics from being thermally deteriorated.

Further, copper-tungsten alloys and copper-based materials used as the base body of the above-mentioned package for accommodating semiconductor elements.
The molybdenum alloy is manufactured by firing tungsten powder or molybdenum powder to obtain a sintered porous body, and then melting the sintered porous body in the pores of the sintered porous body. When impregnated with copper, the sintered porous body has a range of 75 to 90% by weight and copper has a range of 10 to 25% by weight. When the sintered porous body made of molybdenum has been impregnated with copper, the sintered porous body has a range of 80 to 90% by weight. % By weight, and copper is in the range of 10 to 20% by weight.

[0005]

However, in this conventional package for accommodating semiconductor elements, the relative permittivity of the aluminum oxide sintered body forming the frame-shaped insulator is 9%.
Since it is as high as 10 to 10 (room temperature, 1 MHz), the propagation speed of the electric signal transmitted through the wiring layer provided in the frame-shaped insulator is slow, so that there is a drawback that a semiconductor element that requires high-speed signal propagation cannot be accommodated. Was there.

Further, in this conventional package for accommodating a semiconductor element, the wiring layer formed on the frame-shaped insulator is formed of a refractory metal material such as tungsten, molybdenum, or manganese, and the tungsten or the like has a ratio thereof. Since the electric resistance is as high as 5.4 μΩ · cm (20 ° C.) or more, when the electric signal is propagated to the wiring layer, the electric signal is greatly attenuated, and the electric signal cannot be accurately and reliably propagated. It also had drawbacks.

Further, in this conventional package for accommodating semiconductor elements, the thermal conductivity of the substrate made of copper-tungsten alloy or copper-molybdenum alloy is about 180 at maximum.
W / mK, which is highly integrated and highly integrated in recent years, and when a semiconductor element that generates a large amount of heat during operation is housed, the heat generated by the semiconductor element is externally transmitted through the substrate. Cannot be completely dissipated into the semiconductor element, and as a result, the semiconductor element becomes high temperature due to the heat generated by the element itself, causing thermal damage to the semiconductor element or causing a variation in characteristics, which makes it impossible to operate stably. Also had.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to accommodate therein a semiconductor element which is driven at high speed, and to operate the accommodated semiconductor element normally and stably for a long period of time. Another object of the present invention is to provide a package for accommodating a semiconductor element.

[0009]

SUMMARY OF THE INVENTION According to the present invention, a base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the semiconductor element are mounted. A semiconductor element housing comprising a frame-shaped insulator having a wiring layer to which each electrode of the element is connected, and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator In the package, the frame-shaped insulator contains 20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O _{3 and} having a yield point of 40 to 800 ° C., quartz, cristobalite, tridymite and enstatite. Quartz obtained by firing a formed body containing a filler component comprising at least one type of forsterite in a proportion of 20 to 80% by volume,
It is made of a sintered body containing at least one crystal phase of cristobalite, tridymite, enstatite, and forsterite, and the base body is made of tungsten and copper, and tungsten is 40 to 70% by weight and copper is 30 to 60% by weight. % Of tungsten and upper and lower layers of 65 to 75% by weight of copper are provided on both upper and lower surfaces of the intermediate layer.

Further, according to the present invention, a base having a mounting portion on which a semiconductor element is mounted is mounted on the upper surface, and the semiconductor element mounting portion is mounted on the base so as to surround each of the electrodes of the semiconductor element. A semiconductor element storage package comprising a frame-shaped insulator having a wiring layer to be connected, and a lid body attached to the frame-shaped insulator and hermetically sealing the inside of the frame-shaped insulator, The frame-shaped insulator is made of lithium silicate glass containing 5 to 30% by weight of Li ₂ O _{3 and} having a yield point of 40 to 800 ° C.
~ 80% by volume, quartz, cristobalite, tridymite, enstatite, quartz obtained by firing a formed body containing a filler component consisting of at least one of 20-80% by volume, cristobalite, tridymite, A sintered body containing at least one crystal phase of enstatite or forsterite, and the base body is composed of molybdenum and copper, wherein the molybdenum is 35 to 70% by weight and the copper is 30 to 65% by weight. It is characterized by having a three-layer structure in which upper and lower layers of molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight are arranged on both upper and lower surfaces of the layer.

According to the package for accommodating semiconductor elements of the present invention, 20 to 20 lithium silicate glass containing 5 to 30% by weight of Li ₂ O ₃ as a frame-shaped insulator and having a yield point of 40 to 800 ° C. is used.
Quartz, cristobalite, tridymite, ensta obtained by firing a molded body containing 80% by volume and a filler component consisting of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in a proportion of 20 to 80% by volume. It is formed of a sintered body containing at least one crystal phase of tight and forsterite, and the relative permittivity of the sintered body is about 5 (room temperature, 1 MHz).
Since it is low, it is possible to accommodate a semiconductor element which requires high-speed signal propagation by increasing the propagation speed of the electric signal transmitted through the wiring layer provided in the frame-shaped insulator.

Further, according to the package for accommodating semiconductor elements of the present invention, the firing temperature of the sintered body constituting the frame-shaped insulator is 8
Since the temperature is as low as 50 ° C to 1100 ° C, the wiring layer formed by co-firing with the frame-shaped insulator has a specific electric resistance of 2.5 μΩ.
It can be formed of copper, silver or gold as low as cm (20 ° C.) or lower, and as a result, when an electric signal is propagated to the wiring layer,
The electric signal will not be greatly attenuated, and the electric signal can be accurately and reliably propagated.

Further, according to the package for accommodating a semiconductor device of the present invention, the base is 40 to 70% by weight of tungsten,
A three-layer structure in which an upper layer and a lower layer each containing 25 to 35% by weight of tungsten and 65 to 75% by weight of copper are arranged on the upper and lower surfaces of an intermediate layer of 30 to 60% by weight of copper, or 35 to 70% by weight of molybdenum, The upper and lower layers of molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight are arranged on the upper and lower surfaces of the intermediate layer of copper of 30 to 65% by weight.
Due to the layered structure, the thermal conductivity of the upper layer, which is the semiconductor element mounting portion of the base, is set to a high value of 300 W / m · K or more, and the semiconductor element mounted on the base emits a large amount of heat during operation. Even so, the heat is quickly spread in the plane direction of the semiconductor element mounting portion of the base, and the upper layer, intermediate layer,
It is possible to efficiently and reliably dissipate the light to the outside through the lower layer in order, whereby the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can be stably and normally operated for a long period of time.

Further, according to the package for accommodating a semiconductor element of the present invention, the substrate has an intermediate layer of 40 to 70% by weight of tungsten and 30 to 60% by weight of copper, and 25 to 35% by weight of tungsten on the upper and lower surfaces of the intermediate layer. 65 to 7 copper
Three-layer structure consisting of upper and lower layers consisting of 5% by weight, or 35 to 70% by weight of molybdenum and 30 to 65% by weight of copper
20 to 30 molybdenum is formed on the upper and lower surfaces of the intermediate layer composed of
It has a three-layer structure in which upper and lower layers composed of 70% by weight of copper and 70 to 80% by weight of copper are arranged. An intermediate layer having a small coefficient of linear thermal expansion is sandwiched by upper and lower layers having a large coefficient of linear thermal expansion to linearly expand the entire substrate. The coefficient is the coefficient of linear thermal expansion of the frame-shaped insulator (8-12
ppm / ° C), and as a result, even when heat is applied to both the base and the frame-shaped insulator when the frame-shaped insulator is attached to the base or when the semiconductor element is activated, etc. Large thermal stress due to the difference in linear thermal expansion coefficient between the base and the frame-shaped insulator does not occur,
As a result, the airtight sealing of the space for accommodating the semiconductor element is always perfect, and the semiconductor element can be operated stably and normally.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention. In FIG. 1, 1 is a base, 2 is a frame-shaped insulator, and 3 is a lid. The base 1, the frame-shaped insulator 2 and the lid 3 constitute a container 5 that hermetically houses the semiconductor element 4 therein.

The base 1 has a mounting portion 1a on which the semiconductor element 4 is mounted, and the mounting portion 1 on which the semiconductor element 4 provided on the upper surface of the base 1 is mounted on the outer peripheral portion of the upper surface.
The frame-shaped insulator 2 is attached so as to surround a through an adhesive such as a brazing material, glass, or resin.

The base 1 acts as a supporting member for supporting the semiconductor element 4, and also absorbs heat generated by the semiconductor element 4 during operation and dissipates it efficiently into the atmosphere to keep the semiconductor element 4 at an appropriate temperature. The semiconductor element 4 is fixed on the mounting portion 1a of the base 1 surrounded by the frame-shaped insulator 2 with an adhesive such as glass, resin, or brazing material.

The substrate 1 is composed of tungsten and copper, and is manufactured by impregnating molten copper into the pores of a sintered porous body obtained by firing tungsten powder.

Further, on the outer periphery of the upper surface of the base body 1, the base body 1 is provided.
The frame-shaped insulator 2 is attached via an adhesive such as a brazing material, glass, or resin so as to surround the mounting portion 1a on which the semiconductor element 4 mounted on the upper surface of the base 1 is mounted. With the frame-shaped insulator 2, a space for housing the semiconductor element 4 is formed inside.

The frame-shaped insulator 2 attached to the substrate 1 is made of a glassy sintered body, and contains lithium silicate glass, a filler such as quartz and cristobalite, and a binder and a dispersant containing acrylic resin as a main component. A plastic sheet and an organic solvent are added to make a sludge, and the sludge is made into a green sheet (raw sheet) by adopting a doctor blade method or a calendar roll method, and then the green sheet is appropriately punched. It is manufactured by stacking a plurality of sheets and firing them at a temperature of about 850 ° C to 1100 ° C.

A plurality of wiring layers 6 extending from the inner peripheral portion to the upper portion of the frame-shaped insulator 2 are adhered and formed, and one end of the wiring layer 6 exposed on the inner peripheral portion of the frame-shaped insulator 2 is attached. The electrodes of the semiconductor element 4 are electrically connected to each other via the bonding wires 7, and the external lead pins 8 connected to an external electric circuit are connected to an external electric circuit at a portion led out to the upper surface of the frame-shaped insulator 2. It is attached by brazing through the brazing material.

The wiring layer 6 acts as a conductive path when connecting each electrode of the semiconductor element 4 to an external electric circuit, and copper,
It is formed of a metal powder such as silver or gold.

For the wiring layer 6, a metal paste obtained by adding and mixing an appropriate organic binder, a solvent, etc. to a metal powder such as copper, silver, gold or the like is formed on a green sheet which will be the frame-shaped insulator 2 in a conventionally well-known manner. By printing and applying a predetermined pattern by using a printing method such as a screen printing method, the frame-shaped insulator 2 is adhered and formed from the inner peripheral portion to the upper surface.

When the wiring layer 6 is made of copper or silver, if a metal having excellent corrosion resistance is deposited on the exposed surface to a thickness of 1 μm to 20 μm by a plating method, the wiring layer 6 will be oxidized and corroded. This can be effectively prevented, and the connection between the wiring layer 6 and the bonding wire 7 and the attachment of the external lead pin 8 to the wiring layer 6 can be strengthened.
Therefore, when the wiring layer 6 is made of copper or silver,
To prevent oxidative corrosion of the wiring layer 6 and the bonding wire 7
In order to strengthen the attachment to the external lead pin 8, a metal having excellent corrosion resistance such as gold is used on the exposed surface of the wiring layer 6 in a range of 1 μm to 2 μm.
It is preferable to deposit it to a thickness of 0 μm.

The wiring layer 6 attached to the frame-shaped insulator 2
The external lead pin 8 brazed to is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy,
It serves to electrically connect the respective electrodes of the semiconductor element 4 to an external electric circuit.

The external lead pin 8 is formed in a predetermined shape by subjecting an ingot (lump) made of a metal such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling working method or a punching working method. To be done.

In the present invention, the frame-shaped insulator 2 is replaced with Li ₂
Yield point of O ₃ and containing 5 to 30 wt% is 40 to 800 ° C.
Obtained by firing a formed body containing 20 to 80% by volume of the lithium silicate glass of 20 to 80% by volume and a filler component containing at least one of quartz, cristobalite, tridymite, enstatite and forsterite in a proportion of 20 to 80% by volume. At least one of quartz, cristobalite, tridymite, enstatite and forsterite
It is important to form the sintered body containing the seed crystal phase.

20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O _{3 and} having a yield point of 40 to 800 ° C., the frame-shaped insulator 2, quartz, cristobalite, tridymite, enstatite, Quartz obtained by firing a formed body containing a filler component consisting of at least one kind of forsterite in a proportion of 20 to 80% by volume,
When the sintered body containing at least one crystal phase of cristobalite, tridymite, enstatite, and forsterite is formed, the frame-shaped insulator 2 has a relative dielectric constant of about 5
The value is as low as (room temperature, 1 MHz), and as a result, it is possible to accommodate a semiconductor element that requires high-speed signal propagation, assuming that the electrical signal propagating through the wiring layer 6 provided in the frame-shaped insulator 2 is fast. Become.

The sintering temperature of the above-mentioned sintered body is 850.
Since it is as low as ˜1100 ° C., the specific resistance of the wiring layer 6 formed by co-firing with the frame-shaped insulator 2 is 2.5 Ω · cm (2
It can be formed of copper, silver, or gold that is as low as 0 ° C. or less, and as a result, when an electric signal is propagated to the wiring layer 6, the electric signal is not significantly attenuated, and the electric signal is accurate and reliable. Can be propagated to.

The frame-shaped insulator 2 contains 20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O _{3 and} having a yield point of 40 to 800 ° C., quartz, cristobalite, tridymite, enstatite, Crystals of quartz, cristobalite, tridymite, enstatite, and forsterite, which are filler components, by firing a formed body containing at least one filler component of forsterite in a proportion of 20 to 80% by volume at a temperature of 850 to 1100 ° C. It is manufactured by forming the phase as it is or by reacting silica of lithium silicate glass with forsterite to form a crystalline phase of enstatite.

The proportion of the lithium silicate glass in the sintered body forming the frame-shaped insulator 2 is 20 to 80% by volume of the lithium silicate glass and 20 to 80% by volume of the filler component. If it is less than 20% by volume, in other words, if the filler component is more than 80% by volume, liquid phase sintering cannot be performed and it is necessary to fire at a high temperature. In that case, the wiring layer 6 has a melting point of copper, silver, gold or the like. However, even if an attempt is made to form a metal material having a low thermal conductivity, such a metal material has a low melting point and thus melts during firing, making it impossible to form the wiring layer 6 together with the frame-shaped insulator 2 at the same time. If the amount exceeds 80% by volume, in other words if the filler component is less than 80% by volume, the properties of the sintered body greatly depend on the properties of the lithium silicate glass, making it difficult to control the material properties and firing. Co-firing the wiring layer 6 for starting temperature is lower is because it becomes difficult.

Li ₂ O ₃ used for the frame-shaped insulator 2
It is important to use a lithium silicate glass containing 5 to 30% by weight, preferably 5 to 20% by weight,
Lithium silicic acid can be deposited by using such a lithium silicic acid glass. If the content of Li ₂ O ₃ is less than 5% by weight, the amount of lithium silicic acid crystals produced during sintering will be small and high strength cannot be achieved.
If the amount is more than 30% by weight, the dielectric loss tangent exceeds 100 × 10 ^−4, and the characteristics as the frame-shaped insulator 2 for the wiring board deteriorate.

It is desirable that the sintered body contains substantially no Pb. This is because Pb is toxic, and if Pb is contained, special equipment and management are required to prevent poisoning during the manufacturing process, and thus the sintered body cannot be manufactured at low cost. is there. Considering the case where Pb is inevitably mixed as an impurity, Pb
The amount of b is preferably 0.05% by weight or less.

Further, the yield point of the sintered body is 400 to 800.
C., especially 400 to 650.degree. C., also indicates that lithium silicic acid
When forming a mixture of glass and filler components
Efficiency of organic binder and solvent added to
Layer 6 to be removed simultaneously and fired at the same time as the frame-shaped insulator 2
Is important for matching the firing conditions with. Bend
If the yield point is lower than 400 ° C, the temperature of the lithium silicate glass will be low.
In order to start sintering at
Wiring layer 6 using a metal material having an initial temperature of 600 to 800 ° C
Simultaneous baking with the
In order to start, the organic binder and solvent cannot decompose and volatilize
And remain in the sintered body, adversely affecting the characteristics of the sintered body.
This is because it will result in a loss. On the other hand, the yield point is 800 ℃
If it is too high, it will sinter unless lithium silicate glass is added too much.
This is because it gets harder, and a large amount of expensive lithium silicate glass is used.
It also does not increase the cost of the sintered body because
This is because Lithium silicate glass satisfying the above characteristics
As, for example, SiO ₂-Li₂O-Al₂O₃, Si
O₂-Li₂O-Al₂O₃-MgO-TiO₂, SiO₂−
Li₂O-Al₂O₃-MgO-Na₂OF, SiO₂−
Li2O-Al₂O₃-MgO-Na₂O-ZnO, Si
O₂-Li₂O-Al₂O₃-K₂OP₂O_Five, SiO₂-L
i₂O-Al₂O₃-K₂OP₂O_Five-ZnO-Na₂O₃,
SiO₂-Li ₂O-MgO, SiO₂-Li₂O-ZnO
And the like, among which, SiO₂Is lithium
It is an essential component for forming silicic acid,
It is present in the proportion of 60-85% by weight,₂And Li₂O and
The total content of 65% to 95% by weight of the total glass is
It is desirable for precipitating crystals of thiium silicate.

On the other hand, as the filler component, quartz,
20 to 80% by volume of at least one of cristobalite, tridymite, enstatite and forsterite,
In particular, it is desirable to mix it in a proportion of 30 to 70% by volume. The combination of such filler components can promote the sintering of the sintered body. Above all, if the quartz / forsterite ratio is 0.427 or more, the relative permittivity during sintering of the forsterite having a high relative permittivity is increased. Can be changed to low enstatite.

The amounts of the above lithium silicate glass and the filler component are preferably adjusted appropriately according to the yield point of the lithium silicate glass. That is, when the deformation point of the lithium silicate glass is as low as 400 to 600 ° C., the sinterability at low temperature is enhanced, so that the content of the filler component can be relatively large, 50 to 80% by volume. On the other hand, when the deformation point of the lithium silicate glass is as high as 650 to 800 ° C., the sinterability is lowered, so that the content of the filler component is preferably relatively small at 20 to 50% by volume. It is desirable to control the sag point of this lithium silicate glass according to the firing conditions of the wiring layer 6.

Further, the lithium silicate glass has a shrinkage initiation temperature of 700 ° C. or lower at 850 ° C. without addition of a filler component.
In the above case, the wiring layer 6 is melted, and the wiring layer 6 cannot be adhered to the frame-shaped insulator 2 by simultaneous firing. However, if the filler component is mixed in a proportion of 20 to 80% by volume, the firing temperature can be increased and a liquid phase for crystal precipitation and liquid phase sintering of the filler component can be formed.
By adjusting the content of the filler component, the simultaneous firing conditions of the frame-shaped insulator 2 and the wiring layer 6 can be matched. Further, the content of expensive lithium silicate glass can be reduced in order to reduce the raw material cost.

For example, when the wiring layer 6 is made of a metal material containing copper as a main component, the wiring layer 6 is fired at 600.
Since it is performed at ˜1100 ° C., in order to perform the co-firing, it is preferable that the yield point of the lithium silicate glass is 400 to 650 ° C. and the content of the filler component is 50 to 80% by volume. Further, the cost of the sintered body can be reduced by reducing the compounding amount of the expensive lithium silicate glass.

The mixture of the lithium silicate glass and the filler component is added to a suitable molding organic binder, solvent, etc., and then formed into a sheet by a desired molding means such as a doctor blade method, a rolling method or a die pressing method. After forming into an arbitrary shape such as a shape, it is fired.

In firing, first, the organic binder and the solvent component added for molding are removed. The removal of the organic binder and the solvent component is usually performed in the atmosphere of about 700 ° C., but when copper is used for the wiring layer 6, it is performed in the nitrogen atmosphere of 100 to 700 ° C. containing water vapor. At this time, the shrinkage starting temperature of the molded body is 700 to
It is desirable that the temperature is about 850 ° C., and if the shrinkage initiation temperature is lower than this, it becomes difficult to remove the organic binder and the solvent component. Therefore, the characteristics of the lithium silicate glass in the molded body, especially the sag point are controlled as described above. Will be required.

Firing is carried out in an oxidizing atmosphere at 850 to 1100 ° C., or in a non-oxidizing atmosphere when co-firing with the wiring layer 6, thereby densifying to a relative density of 90% or more. If the firing temperature at this time is lower than 850 ° C., the densification cannot be achieved. On the other hand, if the firing temperature is higher than 1100 ° C., the wiring layer 6 is melted by the simultaneous firing with the wiring layer 6. When copper is used as the wiring layer 6, 850 to 10
It is performed in a non-oxidizing atmosphere at 50 ° C.

Further, in the present invention, the substrate 1 is made of tungsten 40 to 70% by weight and copper 30 to 60% by weight.
It is important to have a three-layer structure in which the upper and lower layers 1b and 1d composed of 35 to 35 wt% and 65 to 75 wt% of copper are arranged.

The substrate 1 is made of tungsten 40 to 70.
% Of tungsten and 25 to 35% by weight of tungsten and 6% of copper on the upper and lower surfaces of the intermediate layer 1c composed of 30 to 60% by weight of copper.
3 with upper and lower layers 1b, 1d consisting of 5 to 75% by weight
Due to the layered structure, the upper layer 1b, which is the semiconductor element mounting portion 1a of the base 1, has a high thermal conductivity of 300 W / m · K or more, and a large amount of semiconductor elements 4 mounted on the base 1 are activated during operation. Even if the heat is generated, the heat is quickly spread in the plane direction of the semiconductor element mounting portion 1a of the substrate 1 and efficiently and surely dissipated to the outside through the upper layer 1b, the intermediate layer 1c, and the lower layer 1d of the substrate 1 sequentially. As a result, the semiconductor element 4 is always kept at an appropriate temperature, and the semiconductor element 4 can be stably and normally operated for a long period of time.

The substrate 1 is an intermediate layer 1 containing 40 to 70% by weight of tungsten and 30 to 60% by weight of copper.
It has a three-layer structure in which upper and lower layers 1b and 1d composed of 25 to 35% by weight of tungsten and 65 to 75% by weight of copper are arranged on both upper and lower sides of c, and the intermediate layer 1c having a small linear thermal expansion coefficient is formed. Since the linear thermal expansion coefficient of the entire substrate 1 sandwiched between the upper and lower layers 1b and 1d having a large size is approximated to the linear thermal expansion coefficient (8 to 12 ppm / ° C.) of the frame-shaped insulator 2, the substrate 1
Even if heat acts on both the base 1 and the frame-shaped insulator 2 when the frame-shaped insulator 2 is attached to the top or when the semiconductor element 4 is operated, the heat is applied between the base 1 and the frame-shaped insulator 2. Does not cause a large thermal stress due to the difference between the linear thermal expansion coefficients of the two, so that the space for housing the semiconductor element 4 is completely hermetically sealed, and the semiconductor element 4 operates stably and normally. It becomes possible.

The substrate 1 has an intermediate layer 1c in which the amount of tungsten is less than 40% by weight, or 70% by weight.
If it exceeds, the coefficient of linear thermal expansion of the base body 1 greatly differs from the coefficient of linear thermal expansion of the frame-shaped insulator 2, and as a result, the frame-shaped insulator 2 is firmly attached to the base body 1. I can't keep it. Therefore, the amount of tungsten forming the intermediate layer 1c of the substrate 1 is 40 to 7.
It is specified in the range of 0% by weight.

If the amount of tungsten in the upper and lower layers 1b and 1d is less than 25% by weight, in other words, the amount of copper is 75%.
If it exceeds 5% by weight, the linear thermal expansion coefficient of the substrate 1 is greatly different from the linear thermal expansion coefficient of the frame-shaped insulator 2, so that the frame-shaped insulator 2 can be firmly attached to the substrate 1. When the amount of tungsten exceeds 35% by weight, in other words, when the amount of copper is less than 65% by weight, the upper and lower layers 1
When the thermal conductivity of b and 1d cannot be made as high as 300 W / m · K or more and the semiconductor element 4 generates a large amount of heat during operation, the heat is completely transmitted to the outside through the base body 1. Cannot be dissipated, and as a result, the semiconductor device 4
To a high temperature to cause thermal damage to the semiconductor element 4,
The characteristics vary, and it becomes impossible to operate stably. Therefore, the upper and lower layers 1b, 1d of the substrate 1
25 to 35% by weight of tungsten and 65 to 7 of copper
It is specified to be 5% by weight.

Further, if the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. The flatness of the substrate 1 is improved by offsetting the stress, and as a result, the frame-shaped insulator 2 can be bonded to the substrate 1 extremely firmly, and the reliability of the hermetic sealing of the container 5 is further ensured. The operation reliability of the semiconductor element 4 housed in the container 5 can be made stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the semiconductor element 4 via the base 1 can be radiated to the outside better by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1b,
When the thickness of 1d is X and the thickness of the intermediate layer 1c is Y,
When 0.5Y> X, the upper and lower layers 1b and 1d having a high thermal conductivity of 300 W / m · K or more become thin, and there is a risk that the heat generated by the semiconductor element 4 cannot be efficiently dissipated to the outside. When <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient becomes large, and it becomes difficult to approximate the linear thermal expansion coefficient of the base body 1 to the linear thermal expansion coefficient of the frame-shaped insulator 2. Since there is a risk, the thicknesses of the upper and lower layers 1b and 1d and the intermediate layer 1c are the same as the upper and lower layers 1b and 1d.
When the thickness of d is X and the thickness of the intermediate layer 1c is Y, 0.
The range of 5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body with a predetermined amount of copper, and a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer 1c are sandwiched between the upper and lower plates, and then in a vacuum or in a medium at a temperature about 20 ° C. higher than the melting temperature of copper (1083 ° C.). It is manufactured by stacking under pressure in a reducing atmosphere.

Thus, according to the above-mentioned package for accommodating semiconductor elements, the semiconductor element 4 is adhered and fixed on the semiconductor element mounting portion 1a of the base body 1 through an adhesive such as glass, resin, or brazing material, and the semiconductor element is mounted. Each electrode 4 is connected to a predetermined wiring layer 6 through a bonding wire 7, and then the lid 3 is attached to the upper surface of the frame-shaped insulator 2 with glass, resin,
A semiconductor device as a product is obtained by airtightly housing the semiconductor element 4 inside a container 5 made up of a base body 1, a frame-shaped insulator 2 and a lid body 3 by joining them through a sealing material made of a brazing material or the like. .

Next, another embodiment of the present invention will be described. In the above-mentioned package for accommodating semiconductor elements, the base 1 is composed of 40 to 70% by weight of tungsten and 30 to 60% by weight of copper.
The upper and lower layers 1b and 1d are composed of 5 to 35% by weight and 65 to 75% by weight of copper, and have a three-layer structure.
An upper and lower layer 1 composed of 20 to 30% by weight of molybdenum and 70 to 80% by weight of copper on the upper and lower surfaces of the intermediate layer 1c.
A three-layer structure in which b and 1d are arranged may be used.

The substrate 1 comprises an intermediate layer 1c composed of 35 to 70% by weight of molybdenum and 30 to 65% by weight of copper, and an upper and lower layer of 20 to 30% by weight of molybdenum and 70 to 80% by weight of copper on the upper and lower surfaces of the intermediate layer 1c. In the case of a three-layer structure in which 1b and 1d are arranged, the thermal conductivity of the upper layer 1b, which is the semiconductor element mounting portion 1a of the base 1, is set to a high value of 300 W / m · K or more, and the base 1 is mounted on the base 1. Even if the semiconductor element 4 generates a large amount of heat during operation, the heat is quickly spread in the plane direction of the semiconductor element mounting portion 1a of the base body 1 and the upper layer 1b, the intermediate layer 1c, and the lower layer 1d of the base body 1 are sequentially passed through the outside. Therefore, the semiconductor element 4 is always kept at an appropriate temperature, and the semiconductor element 4 can be stably and normally operated for a long period of time.

Further, the upper and lower layers 1b of molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight are formed on the upper and lower surfaces of the intermediate layer 1c of 35 to 70% by weight of molybdenum and 30 to 65% by weight of copper. In the base 1 having a three-layer structure in which 1d is arranged, the intermediate layer 1c having a small linear thermal expansion coefficient is sandwiched by the upper and lower layers 1b and 1d having a large linear thermal expansion coefficient, and the linear thermal expansion coefficient of the entire base 1 is the line of the frame-shaped insulator 2. Coefficient of thermal expansion (8-12
Even if heat is applied to both the base body 1 and the frame-shaped insulator 2 when the frame-shaped insulator 2 is attached to the base body 1 or when the semiconductor element 4 is operated, it is approximated to (ppm / ° C.). No large thermal stress is generated between the base 1 and the frame-shaped insulator 2 due to the difference in linear thermal expansion coefficient between them, so that the space for accommodating the semiconductor element 4 is always hermetically sealed. It becomes complete, and the semiconductor element 4 can be stably and normally operated.

When the amount of molybdenum in the intermediate layer 1c of the substrate 1 is less than 35% by weight or exceeds 70% by weight, the coefficient of linear thermal expansion of the substrate 1 is the linear thermal expansion of the frame-shaped insulator 2. This greatly differs from the coefficient, and as a result, the frame-shaped insulator 2 cannot be firmly attached to the base body 1. Therefore, the amount of molybdenum forming the intermediate layer 1c of the substrate 1 is specified in the range of 35 to 70% by weight.

When the amount of molybdenum in the upper and lower layers 1b and 1d is less than 20% by weight, in other words, when the amount of copper exceeds 80% by weight, the coefficient of linear thermal expansion of the substrate 1 is the frame-shaped insulator 2.
When the amount of molybdenum exceeds 30% by weight, the frame-shaped insulator 2 cannot be firmly attached to the base body 1 due to a large difference with respect to the linear thermal expansion coefficient.
In other words, when the copper content is less than 70% by weight, the upper and lower layers 1b,
When the thermal conductivity of 1d cannot be made as high as 300 W / m · K or more and the semiconductor element 4 emits a large amount of heat during operation, the heat is completely dissipated to the outside through the substrate 1. As a result, the semiconductor element 4 is heated to a high temperature, causing thermal damage to the semiconductor element 4 or variation in characteristics, which makes it impossible to operate the semiconductor element 4 stably. Therefore, the upper and lower layers 1b and 1d of the substrate 1 are specified to have molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight.

Further, if the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. The stress is canceled out, and the flatness of the substrate 1 is improved,
As a result, the frame-shaped insulator 2 can be bonded to the base body 1 extremely firmly, and the reliability of the hermetic sealing of the container 5 is further ensured, and the operation reliability of the semiconductor element 4 housed inside the container 5 is improved. Can be stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the semiconductor element 4 via the base 1 can be radiated to the outside better by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1b,
When the thickness of 1d is X and the thickness of the intermediate layer 1c is Y,
When 0.5Y> X, the upper and lower layers 1b and 1d having a high thermal conductivity of 300 W / m · K or more become thin, and there is a risk that the heat generated by the semiconductor element 4 cannot be efficiently dissipated to the outside. When <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient becomes large, and it becomes difficult to approximate the linear thermal expansion coefficient of the base body 1 to the linear thermal expansion coefficient of the frame-shaped insulator 2. Since there is a risk, the thicknesses of the upper and lower layers 1b and 1d and the intermediate layer 1c are the same as the upper and lower layers 1b and 1d.
When the thickness of d is X and the thickness of the intermediate layer 1c is Y, 0.
The range of 5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body with a predetermined amount of copper and a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer are sandwiched by the plate layers of the upper and lower layers, and then the melting temperature of copper (1083
In vacuum or at a temperature about 20 ° C higher than
It is manufactured by stacking under pressure in a reducing atmosphere.

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0060]

According to the package for accommodating a semiconductor element of the present invention, 20 lithium silicate glass containing a frame-shaped insulator in an amount of 5 to 30% by weight of Li ₂ O _{3 and} having a yield point of 40 to 800 ° C. is used.
~ 80% by volume, quartz, cristobalite, tridymite, enstatite, quartz obtained by firing a formed body containing a filler component consisting of at least one of 20-80% by volume, cristobalite, tridymite, It is made of a sintered body containing at least one crystal phase of enstatite or forsterite, and the relative permittivity of the sintered body is about 5 (room temperature, 1 MHz).
Since it is low, it is possible to accommodate a semiconductor element which requires high-speed signal propagation by increasing the propagation speed of the electric signal transmitted through the wiring layer provided in the frame-shaped insulator.

Further, according to the package for housing a semiconductor element of the present invention, the firing temperature of the sintered body forming the frame-shaped insulator is 8
Since the temperature is as low as 50 ° C to 1100 ° C, the wiring layer formed by co-firing with the frame-shaped insulator has a specific electric resistance of 2.5 μΩ.
It can be formed of copper, silver or gold as low as cm (20 ° C.) or lower, and as a result, when an electric signal is propagated to the wiring layer,
The electric signal will not be greatly attenuated, and the electric signal can be accurately and reliably propagated.

Further, according to the package for accommodating a semiconductor element of the present invention, the base is 40 to 70% by weight of tungsten,
A three-layer structure in which an upper layer and a lower layer each containing 25 to 35% by weight of tungsten and 65 to 75% by weight of copper are arranged on the upper and lower surfaces of an intermediate layer of 30 to 60% by weight of copper, or 35 to 70% by weight of molybdenum, The upper and lower layers of molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight are arranged on the upper and lower surfaces of the intermediate layer of copper of 30 to 65% by weight.
Due to the layered structure, the thermal conductivity of the upper layer, which is the semiconductor element mounting portion of the base, is set to a high value of 300 W / m · K or more, and the semiconductor element mounted on the base emits a large amount of heat during operation. Even so, the heat is quickly spread in the plane direction of the semiconductor element mounting portion of the base, and the upper layer, intermediate layer,
It is possible to efficiently and reliably dissipate the light to the outside through the lower layer in order, whereby the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can be stably and normally operated for a long period of time.

Further, according to the package for accommodating a semiconductor element of the present invention, the substrate has an intermediate layer consisting of 40 to 70% by weight of tungsten and 30 to 60% by weight of copper, and 25 to 35% by weight of tungsten on the upper and lower surfaces of the intermediate layer. 65 to 7 copper
Three-layer structure consisting of upper and lower layers consisting of 5% by weight, or 35 to 70% by weight of molybdenum and 30 to 65% by weight of copper
20 to 30 molybdenum is formed on the upper and lower surfaces of the intermediate layer composed of
It has a three-layer structure in which upper and lower layers composed of 70% by weight of copper and 70 to 80% by weight of copper are arranged. An intermediate layer having a small coefficient of linear thermal expansion is sandwiched by upper and lower layers having a large coefficient of linear thermal expansion to linearly expand the entire substrate. Coefficient of linear thermal expansion of frame-shaped insulator (8ppm
/ ° C to 12 ppm / ° C), and as a result, heat acts on both the substrate and the frame-shaped insulator when attaching the frame-shaped insulator to the substrate or when the semiconductor element is operated. Even in this case, a large thermal stress due to the difference in linear thermal expansion coefficient between the base body and the frame-shaped insulator does not occur, so that the space for housing the semiconductor element is always hermetically sealed. It becomes complete, and it becomes possible to operate the semiconductor element stably and normally.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

1 ... Base 1a ... ・ Mounting part 1b ... upper layer 1c ... Middle layer 1d ... Lower layer 2 ... Frame-shaped insulator 3 ... Lid 4 ... Semiconductor element 5 ... Container 6 ... Wiring layer 7 ... Bonding wire 8: External lead pin

Claims (2)

[Claims] 1. A base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the semiconductor element, and each electrode of the semiconductor element is connected. A package for accommodating a semiconductor element, comprising: a frame-shaped insulator having a wiring layer; and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator. The insulator contains 5 to 30% by weight of Li ₂ O ₃ and has a yield point of 40 to
20-80% by volume of lithium silicate glass at 800 ° C,
Of quartz, cristobalite, tridymite, enstatite, forsterite obtained by firing a formed body containing a filler component consisting of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in a proportion of 20 to 80% by volume. A sintered body containing at least one crystal phase, wherein the substrate is made of tungsten and copper, and tungsten is formed on both upper and lower surfaces of an intermediate layer containing 40 to 70% by weight of tungsten and 30 to 60% by weight of copper. Is a 25 to 35 wt% copper and 65 to 75 wt% copper, and has a three-layer structure in which upper and lower layers are arranged. 2. A base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the base, and each electrode of the semiconductor element is connected. A package for accommodating a semiconductor element, comprising: a frame-shaped insulator having a wiring layer; and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator. The insulator contains 5 to 30% by weight of Li ₂ O ₃ and has a yield point of 40 to
20-80% by volume of lithium silicate glass at 800 ° C,
Of quartz, cristobalite, tridymite, enstatite, forsterite obtained by firing a formed body containing a filler component consisting of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in a proportion of 20 to 80% by volume. A sintered body containing at least one crystal phase, and the base body contains molybdenum and copper;
It has a three-layer structure in which the upper and lower layers of molybdenum of 20 to 30% by weight and copper of 70 to 80% by weight are arranged on both upper and lower surfaces of the intermediate layer of 0% by weight and 30 to 65% by weight of copper. A package for semiconductor device storage characterized by.