JP2003082468A - Catalyst solution for electroless plating - Google Patents

Catalyst solution for electroless plating

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Publication number
JP2003082468A
JP2003082468A JP2001277059A JP2001277059A JP2003082468A JP 2003082468 A JP2003082468 A JP 2003082468A JP 2001277059 A JP2001277059 A JP 2001277059A JP 2001277059 A JP2001277059 A JP 2001277059A JP 2003082468 A JP2003082468 A JP 2003082468A
Authority
JP
Japan
Prior art keywords
compounds
compound
catalyst
electroless plating
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001277059A
Other languages
Japanese (ja)
Other versions
JP4669982B2 (en
Inventor
Koji Kita
晃治 北
Kuniaki Otsuka
邦顕 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okuno Chemical Industries Co Ltd
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Okuno Chemical Industries Co Ltd
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Application filed by Okuno Chemical Industries Co Ltd filed Critical Okuno Chemical Industries Co Ltd
Priority to JP2001277059A priority Critical patent/JP4669982B2/en
Publication of JP2003082468A publication Critical patent/JP2003082468A/en
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Publication of JP4669982B2 publication Critical patent/JP4669982B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an electroless plating catalyst which can be suitably used for applying an electroless plating catalyst to only a conductor part of a material to be plated consisting of the conductor part and an insulator part, which hardly causes nondeposition of plating on the conductor part and spreading of plating to the insulator part, in which adsorption of catalytic metal to a catalyzing tank can be minimized and which exhibits excellent stability. SOLUTION: The catalyst solution for electroless plating is composed of an aqueous solution containing (i) at least one compound selected from the group consisting of gold compounds, silver compounds, palladium compounds, ruthenium compounds, rhodium compounds, platinum compounds and copper compounds and (ii) a water-soluble nitrogen compound containing hexavalent sulfur.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、無電解めっき用触
媒液に関する。
TECHNICAL FIELD The present invention relates to a catalyst liquid for electroless plating.

【0002】[0002]

【従来の技術】W、Mo、Cu等の導体パターンが形成
された電子部品基板を被めっき物として、導体パターン
上にのみに無電解めっきを行うには、無電解めっき開始
のための触媒金属核を導体パターン表面のみに付与する
必要がある。
2. Description of the Related Art Using an electronic component substrate having a conductor pattern of W, Mo, Cu or the like as an object to be plated to perform electroless plating only on the conductor pattern, a catalyst metal for starting electroless plating is used. It is necessary to apply the nucleus only to the surface of the conductor pattern.

【0003】従来、無電解めっき用触媒としては、水溶
性の触媒金属化合物を溶解した水溶液が主として用いら
れている。しかしながら、導体パターンが形成された物
品に対する触媒液としてこの様な触媒水溶液を用いる場
合には、導体パターン上への触媒金属核の析出が不十分
であり、無電解めっきがムラ状に析出したり、あるいは
無電解めっき反応が開始しないことがあり、スキップ現
象と称される部分的なめっきの不析出が生じる場合があ
る。
Conventionally, an aqueous solution in which a water-soluble catalytic metal compound is dissolved is mainly used as a catalyst for electroless plating. However, when such a catalyst aqueous solution is used as a catalyst solution for an article on which a conductor pattern is formed, the deposition of catalytic metal nuclei on the conductor pattern is insufficient and electroless plating may be deposited unevenly. Alternatively, the electroless plating reaction may not start, and partial plating non-precipitation called a skip phenomenon may occur.

【0004】また、上記した触媒水溶液では、触媒金属
が遊離の金属イオンとして存在し、その濃度が高いため
に、触媒金属イオンの金属コロイド化が進行し易く、導
体パターン以外の基板表面にコロイド化した触媒金属が
析出して、この部分にも無電解めっきが析出し易くな
り、導体パターン以外の基板表面に無電解めっきが析出
する現象であるめっき拡がりが生じるという欠点もあ
る。
Further, in the above catalyst aqueous solution, the catalyst metal exists as free metal ions and its concentration is high, so that the metal colloidation of the catalyst metal ions easily proceeds, and the surface of the substrate other than the conductor pattern is colloided. There is also a drawback that electroless plating is likely to be deposited also on this portion due to the deposition of the catalyst metal, and plating spread, which is a phenomenon in which electroless plating is deposited on the substrate surface other than the conductor pattern, occurs.

【0005】そこで、カルボン酸化合物、アミノカルボ
ン酸化合物等のキレート剤を用いて触媒金属を錯体化す
ることで、スキップ現象やめっき拡がりを防止する試み
がなされている。
Therefore, an attempt has been made to prevent the skip phenomenon and the plating spread by complexing the catalyst metal with a chelating agent such as a carboxylic acid compound or an aminocarboxylic acid compound.

【0006】しかしながら、これらのキレート剤を配合
した触媒液を用いる場合にも、スキップ現象やめっき拡
がりを充分に防止することができない。しかも、カルボ
ン酸化合物、アミノカルボン酸化合物等のキレート剤を
使用した場合には、触媒付与処理に用いる樹脂製の処理
槽に触媒金属の錯体が吸着し易く、数日間の内に処理槽
内の触媒金属濃度が減少するという問題点がある。
However, even when using a catalyst liquid containing these chelating agents, the skip phenomenon and the plating spread cannot be sufficiently prevented. Moreover, when a chelating agent such as a carboxylic acid compound or an aminocarboxylic acid compound is used, the catalytic metal complex is easily adsorbed to the resin treatment tank used for the catalyst application treatment, and the catalyst inside the treatment tank is treated within a few days. There is a problem that the catalyst metal concentration decreases.

【0007】[0007]

【発明が解決しようとする課題】本発明の主な目的は、
導体部分と絶縁体部分からなる被めっき物にける導体部
分にのみ無電解めっき用触媒を付与するために適した無
電解めっき用触媒であって、導体部分におけるめっきの
不析出や絶縁体部分へのめっき拡がりが生じにくく、し
かも触媒付与処理槽への触媒金属の吸着が少ない、安定
性に優れた無電解めっき用触媒を提供することである。
The main object of the present invention is to:
A catalyst for electroless plating that is suitable for applying a catalyst for electroless plating only to a conductor portion in an object to be plated consisting of a conductor portion and an insulator portion. It is an object of the present invention to provide a catalyst for electroless plating which is less likely to spread in the plating, has less adsorption of the catalyst metal in the catalyst applying treatment tank, and is excellent in stability.

【0008】[0008]

【課題を解決するための手段】本発明者は、上記した目
的を達成すべく鋭意研究を重ねた結果、触媒物質として
金化合物、銀化合物、パラジウム化合物、ルテニウム化
合物、ロジウム化合物、白金化合物および銅化合物から
選ばれた少なくとも一種の化合物を含有し、更に、キレ
ート剤として6価のイオウを含む水溶性窒素化合物を含
有する新規な無電解めっき用触媒液を用いることによっ
て、導体パターンが形成された電子部品基板等を被めっ
き物とする場合に、スキップ現象やめっき拡がりが生じ
ることなく、導体パターン上にのみに良好な無電解めっ
き被膜を形成することが可能となることを見出し、ここ
に本発明を完成するに至った。
Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has found that gold compounds, silver compounds, palladium compounds, ruthenium compounds, rhodium compounds, platinum compounds and copper are used as catalyst substances. A conductor pattern was formed by using a novel electroless plating catalyst liquid containing at least one compound selected from the compounds and further containing a water-soluble nitrogen compound containing hexavalent sulfur as a chelating agent. It has been found that it is possible to form a good electroless plating film only on the conductor pattern without causing a skip phenomenon or plating spread when an electronic component substrate or the like is to be plated. The invention was completed.

【0009】即ち、本発明は、下記の無電解めっき用触
媒液を提供するものである。 1. (i)金化合物、銀化合物、パラジウム化合物、
ルテニウム化合物、ロジウム化合物、白金化合物および
銅化合物からなる群から選ばれた少なくとも一種の化合
物、並びに(ii)6価のイオウを含む水溶性窒素化合物
を含有する水溶液からなる無電解めっき用触媒液。 2. (i)金化合物、銀化合物、パラジウム化合物、
ルテニウム化合物、ロジウム化合物、白金化合物および
銅化合物からなる群から選ばれた少なくとも一種の化合
物を金属濃度として1×10-5〜0.1mol/l、並
びに(ii)6価のイオウを含む水溶性窒素化合物を2×
10-5〜0.5mol/l含有する水溶液からなる無電
解めっき用触媒液。
That is, the present invention provides the following electroless plating catalyst liquid. 1. (I) gold compound, silver compound, palladium compound,
A catalyst liquid for electroless plating comprising an aqueous solution containing at least one compound selected from the group consisting of ruthenium compounds, rhodium compounds, platinum compounds and copper compounds, and (ii) a water-soluble nitrogen compound containing hexavalent sulfur. 2. (I) gold compound, silver compound, palladium compound,
Water-soluble containing at least one compound selected from the group consisting of ruthenium compounds, rhodium compounds, platinum compounds and copper compounds as a metal concentration of 1 × 10 −5 to 0.1 mol / l, and (ii) hexavalent sulfur 2x nitrogen compounds
A catalyst solution for electroless plating, which comprises an aqueous solution containing 10 −5 to 0.5 mol / l.

【0010】[0010]

【発明の実施の形態】本発明の無電解めっき用触媒液
は、(i)金化合物、銀化合物、パラジウム化合物、ル
テニウム化合物、ロジウム化合物、白金化合物および銅
化合物からなる群から選ばれた少なくとも一種の化合
物、並びに(ii)6価のイオウを含む水溶性窒素化合
物、を含有する水溶液である。
BEST MODE FOR CARRYING OUT THE INVENTION The catalyst liquid for electroless plating of the present invention is (i) at least one selected from the group consisting of gold compounds, silver compounds, palladium compounds, ruthenium compounds, rhodium compounds, platinum compounds and copper compounds. And a water-soluble nitrogen compound containing (ii) hexavalent sulfur.

【0011】以下、本発明の触媒液について、具体的に
説明する。
The catalyst liquid of the present invention will be specifically described below.

【0012】本発明の無電解めっき用触媒液に含まれる
触媒物質は、金化合物、銀化合物、パラジウム化合物、
ルテニウム化合物、ロジウム化合物、白金化合物および
銅化合物からなる群から選ばれた少なくとも一種の化合
物(以下、「触媒金属化合物」と記載する場合がある)
である。
The catalyst substance contained in the catalyst liquid for electroless plating of the present invention includes a gold compound, a silver compound, a palladium compound,
At least one compound selected from the group consisting of ruthenium compounds, rhodium compounds, platinum compounds and copper compounds (hereinafter sometimes referred to as "catalyst metal compound")
Is.

【0013】これらの触媒金属化合物としては、上記し
た触媒金属成分を含む水溶性化合物であれば特に限定な
く用いることができる。これらの内で、水溶性金化合物
としては、亜硫酸金、硫酸金、シアン化金カリウム、塩
化金等を例示でき、水溶性銀化合物としては、フッ化
銀、硝酸銀、硫酸銀、酢酸銀等を例示することができ、
水溶性パラジウム化合物としては、塩化パラジウム、硫
酸パラジウム、硝酸パラジウム、酢酸パラジウム、アン
ミンパラジウム等を例示でき、水溶性ルテニウム化合物
としては、ルテニウム酸塩、塩化ルテニウム、酸化ルテ
ニウム等を例示でき、水溶性ロジウム化合物としては、
塩化ロジウム、硝酸ロジウム、酢酸ロジウム等を例示で
き、水溶性白金化合物としては、塩化白金等を例示で
き、水溶性銅化合物としては、フタル酸銅、酸化銅、し
ゅう酸銅、グルコン酸銅、ギ酸銅、水酸化銅、硫酸銅、
塩化銅、ピロリン酸銅、炭酸銅等を例示できる。これら
の触媒金属化合物は、一種単独又は二種以上混合して用
いることができる。
As these catalytic metal compounds, any water-soluble compound containing the above-mentioned catalytic metal component can be used without particular limitation. Among these, examples of the water-soluble gold compound include gold sulfite, gold sulfate, potassium gold cyanide, gold chloride and the like, and examples of the water-soluble silver compound include silver fluoride, silver nitrate, silver sulfate, silver acetate and the like. Can be illustrated,
Examples of the water-soluble palladium compound include palladium chloride, palladium sulfate, palladium nitrate, palladium acetate, ammine palladium, and the like, and examples of the water-soluble ruthenium compound include ruthenate, ruthenium chloride, ruthenium oxide, and the like, water-soluble rhodium. As a compound,
Examples of rhodium chloride, rhodium nitrate, rhodium acetate, etc., examples of water-soluble platinum compounds include platinum chloride, etc., examples of water-soluble copper compounds include copper phthalate, copper oxide, copper oxalate, copper gluconate, formic acid. Copper, copper hydroxide, copper sulfate,
Examples include copper chloride, copper pyrophosphate, copper carbonate and the like. These catalytic metal compounds may be used alone or in combination of two or more.

【0014】触媒液中の触媒金属化合物の濃度は、金属
濃度として、1×10-5〜0.1mol/l程度とする
ことが好ましく、2×10-5〜1×10-2mol/l程
度とすることがより好ましい。
The concentration of the catalytic metal compound in the catalyst liquid is preferably about 1 × 10 -5 to 0.1 mol / l as the metal concentration, and 2 × 10 -5 to 1 × 10 -2 mol / l. It is more preferable to adjust the degree.

【0015】本発明の触媒液では、更に、6価のイオウ
を含有する水溶性窒素化合物を配合することが必要であ
る。この様な特定の水溶性窒素化合物を配合した本発明
の触媒液を用いて触媒を付与することによって、W、M
o.Cu等からなる導体パターンを各種の不導体上に形
成した物品を被めっき物とする場合に、スキップ現象や
めっき拡がりを防止して、導体パターン上にのみに良好
な無電解めっき皮膜を形成することが可能となる。この
理由については、必ずしも明確ではないが、6価のイオ
ウを含有する水溶性窒素化合物を用いることによって、
触媒金属イオンがキレート化されて遊離金属イオン濃度
が減少して金属イオンの金属コロイド化が防止され、し
かも、形成された触媒金属の錯体は、樹脂などへの吸着
力が低いために、導体パターン外への触媒金属核の付着
がほとんどなく、導体パターン外への無電解めっきの析
出が防止されるものと思われる。更に、W、Mo.Cu
等の導体パターンを形成している金属の溶解を促進する
ことで、金属イオンとの置換反応を容易にし、導体パタ
ーン上への触媒金属の析出が促進され、スキップ現象の
発生が防止されるものと思われる。
In the catalyst liquid of the present invention, it is further necessary to add a water-soluble nitrogen compound containing hexavalent sulfur. By adding a catalyst using the catalyst liquid of the present invention containing such a specific water-soluble nitrogen compound, W, M
o. When an article having a conductor pattern made of Cu or the like formed on various non-conductors is used as an object to be plated, a skip phenomenon and plating spread are prevented, and a good electroless plating film is formed only on the conductor pattern. It becomes possible. The reason for this is not clear, but by using a water-soluble nitrogen compound containing hexavalent sulfur,
The catalyst metal ions are chelated to reduce the concentration of free metal ions and prevent the metal ions from becoming metal colloids. Moreover, the formed catalyst metal complex has a low adsorbing power to the resin, etc. It is thought that there is almost no adhesion of catalytic metal nuclei to the outside and deposition of electroless plating outside the conductor pattern is prevented. Furthermore, W, Mo. Cu
By facilitating the dissolution of the metal forming the conductor pattern such as, the substitution reaction with metal ions is facilitated, the deposition of the catalytic metal on the conductor pattern is promoted, and the skip phenomenon is prevented from occurring. I think that the.

【0016】本発明で使用できる6価のイオウを含有す
る水溶性窒素化合物については、分子中に6価のイオウ
と窒素を含有する水溶性化合物であれば特に限定はない
が、例えば、6価のイオウを含有する基として−SO2
−基を含むアミン類、含窒素複素環式化合物等を好適に
用いることができる。アミン化合物は、第一アミン、第
二アミン、第三アミンの何れでも良く、含窒素複素環式
化合物としては、環の構成原子として窒素原子を少なく
とも一個含む4〜8員環程度の飽和又は不飽和の複素環
を含む化合物を用いることができる。
The water-soluble nitrogen compound containing hexavalent sulfur that can be used in the present invention is not particularly limited as long as it is a water-soluble compound containing hexavalent sulfur and nitrogen in the molecule. -SO 2 as the group containing sulfur of
Amine containing a -group, a nitrogen-containing heterocyclic compound and the like can be preferably used. The amine compound may be any of primary amine, secondary amine, and tertiary amine. As the nitrogen-containing heterocyclic compound, a saturated or unsaturated 4- to 8-membered ring containing at least one nitrogen atom as a ring-constituting atom is used. Compounds containing saturated heterocycles can be used.

【0017】この様な水溶性窒素化合物の具体例として
は、第一アミン化合物として、(p−アミジノフェニ
ル)メタンスルホニルフルオライド塩酸塩、メタンスル
ホンアミド、スルファミン酸、アミノメタンスルホン
酸、アミノエタンスルホン酸、硫酸p−アミノフェノー
ル、3,3’−ジアミノジフェニルスルホン、4,4’
−ジアミノジフェニルスルホン、p−トルエンスルホン
アミド、スルファニルアミド、スルファニル酸、4−ア
ミノ−2−メチルベンゼン−1−スルホン酸、2−アミ
ノ−5−メチルベンゼン−1−スルホン酸、ベンゼンス
ルホンアミド、N−(2−アセトアミド)−2−アミノ
エタンスルホン酸、o−アミノベンゼンスルホン酸、p
−アミノベンゼンスルホンアミド、1−クロロベンゼン
−2,4−ジスルホンアミド、1−アミノ−2−ナフト
ール−4−スルホン酸、2−アミノ−5−ナフトール−
7−スルホン酸、8−アミノ−1−ナフトール−3,6
−ジスルホン酸(ナトリウム塩)、スルファニルアミ
ド、タウロシアミン、2−アミノプロパンスルホン酸等
を挙げることができる。また、第二アミン化合物として
は、ベンゼンスルホヒドロキサミン酸、N−シクロヘキ
シル−3−アミノプロパンスルホン酸、N−トリス(ヒ
ドロキシメチル)メチル−3−アミノプロパンスルホン
酸、N−トリス(ヒドロキシメチル)メチル−2−アミ
ノエタンスルホン酸、2−ヒドロキシ−N−トリス(ヒ
ドロキシメチル)メチル−3−アミノプロパンスルホン
酸、N−シクロヘキシル−2−ヒドロキシ−3−アミノ
プロパンスルホン酸等を例示できる。第三アミン化合物
としては、N,N−ビス(2−ヒドロキシエチル)−2
−アミノエタンスルホン酸、3−[N,N−ビス(2−
ヒドロキシエチル)アミノ]−2−ヒドロキシプロパン
スルホン酸等を例示できる。複素環式化合物としては、
4−(2−ヒドロキシエチル)1−ピペラジンエタンス
ルホン酸、3−(N−モルホリノ)プロパンスルホン
酸、2−(N−モルホリノ)エタンスルホン酸、ピペラ
ジン−N,N’−ビス(2−エタンスルホン酸)、2−
ヒドロキシ−3−[4−(2−ヒドロキシエチル)−1
−ピペラジニル]プロパンスルホン酸、ピペラジン−
N,N’−ビス(2−ヒドロキシプロパン−3−スルホ
ン酸)、2−ヒドロキシ−3−モルホリノプロパンスル
ホン酸、ピリジンスルホン酸、ジアゾキシド等を例示で
きる。
Specific examples of such water-soluble nitrogen compounds include (p-amidinophenyl) methanesulfonyl fluoride hydrochloride, methanesulfonamide, sulfamic acid, aminomethanesulfonic acid, aminoethanesulfone as primary amine compounds. Acid, p-aminophenol sulfate, 3,3'-diaminodiphenyl sulfone, 4,4 '
-Diaminodiphenyl sulfone, p-toluene sulfonamide, sulfanilamide, sulfanilic acid, 4-amino-2-methylbenzene-1-sulfonic acid, 2-amino-5-methylbenzene-1-sulfonic acid, benzenesulfonamide, N -(2-acetamido) -2-aminoethanesulfonic acid, o-aminobenzenesulfonic acid, p
-Aminobenzenesulfonamide, 1-chlorobenzene-2,4-disulfonamide, 1-amino-2-naphthol-4-sulfonic acid, 2-amino-5-naphthol-
7-sulfonic acid, 8-amino-1-naphthol-3,6
-Disulfonic acid (sodium salt), sulfanilamide, taurocyanamine, 2-aminopropanesulfonic acid and the like can be mentioned. Further, as the secondary amine compound, benzenesulfohydroxamic acid, N-cyclohexyl-3-aminopropanesulfonic acid, N-tris (hydroxymethyl) methyl-3-aminopropanesulfonic acid, N-tris (hydroxymethyl) methyl Examples include 2-aminoethanesulfonic acid, 2-hydroxy-N-tris (hydroxymethyl) methyl-3-aminopropanesulfonic acid, N-cyclohexyl-2-hydroxy-3-aminopropanesulfonic acid. As the tertiary amine compound, N, N-bis (2-hydroxyethyl) -2
-Aminoethanesulfonic acid, 3- [N, N-bis (2-
Examples thereof include hydroxyethyl) amino] -2-hydroxypropanesulfonic acid. As the heterocyclic compound,
4- (2-hydroxyethyl) 1-piperazineethanesulfonic acid, 3- (N-morpholino) propanesulfonic acid, 2- (N-morpholino) ethanesulfonic acid, piperazine-N, N'-bis (2-ethanesulfone) Acid), 2-
Hydroxy-3- [4- (2-hydroxyethyl) -1
-Piperazinyl] propanesulfonic acid, piperazine-
Examples thereof include N, N'-bis (2-hydroxypropane-3-sulfonic acid), 2-hydroxy-3-morpholinopropanesulfonic acid, pyridinesulfonic acid and diazoxide.

【0018】6価のイオウを含有する水溶性窒素化合物
は、一種単独又は二種以上混合して用いることができ
る。
The water-soluble nitrogen compounds containing hexavalent sulfur may be used alone or in combination of two or more.

【0019】触媒液中での6価のイオウを含有する水溶
性窒素化合物の濃度は、特に限定的ではないが、通常、
2×10-5〜0.5mol/l程度とすることが好まし
く、5×10-5〜0.2mol/l程度とすることがよ
り好ましく、1×10-4〜0.1mol/l程度とする
ことが更に好ましい。
The concentration of the water-soluble nitrogen compound containing hexavalent sulfur in the catalyst solution is not particularly limited, but is usually
It is preferably about 2 × 10 −5 to 0.5 mol / l, more preferably about 5 × 10 −5 to 0.2 mol / l, and about 1 × 10 −4 to 0.1 mol / l. More preferably.

【0020】以下、上記した本発明の触媒液を用いて無
電解めっきを行う方法について具体的に説明する。
The method for performing electroless plating using the above-mentioned catalyst solution of the present invention will be specifically described below.

【0021】被めっき物については特に限定はなく、従
来から無電解めっきの対象とされている各種物品をめっ
き対象とすることができる。特に、本発明の触媒液によ
れば、導体部分と絶縁体部分から構成される物品につい
て、導体部分のみに選択的に無電解めっき用触媒を付与
できるので、セラミックス、樹脂、ガラス等の絶縁材料
上にMo、Cu、Wなどによる導体パターンが形成され
た物品、例えば、セラミックス基板、プリント基板、チ
ップなどを被めっき物とすることが特に有効である。
The object to be plated is not particularly limited, and various articles which have been conventionally targets for electroless plating can be targets for plating. In particular, according to the catalyst solution of the present invention, for an article composed of a conductor portion and an insulator portion, the catalyst for electroless plating can be selectively applied only to the conductor portion, so that an insulating material such as ceramics, resin, or glass can be used. It is particularly effective to use an article on which a conductor pattern of Mo, Cu, W or the like is formed, for example, a ceramics substrate, a printed circuit board, a chip or the like as the object to be plated.

【0022】まず、この様な被めっき物に対して、常法
に従って前処理を行う。前処理工程については、特に限
定されるものではないが、通常、処理対象の材質に応じ
た公知の方法で、浸漬脱脂、酸洗等を行えばよい。
First, such an object to be plated is subjected to pretreatment according to a conventional method. The pretreatment step is not particularly limited, but generally, the immersion degreasing, pickling, etc. may be performed by a known method according to the material to be treated.

【0023】浸漬脱脂に用いる脱脂液としては、被めっ
き物の種類に応じて、アルカリ性脱脂液、酸性脱脂液、
溶剤系脱脂液などから適宜選択して用いればよい。特
に、導体パターンがMo、W等の場合には、アルカリに
溶解しやすい性質を有するために、アルカリ性脱脂剤を
用いる場合が多い。
As the degreasing liquid used for the immersion degreasing, an alkaline degreasing liquid, an acidic degreasing liquid,
The solvent-based degreasing liquid may be appropriately selected and used. In particular, when the conductor pattern is Mo, W, or the like, an alkaline degreasing agent is often used because it has a property of being easily dissolved in alkali.

【0024】脱脂処理後には、通常、導体部分表面の酸
化皮膜を除去するが、Mo、W等をアルカリ性脱脂剤で
脱脂した場合には、この工程を省くことも可能である。
酸化皮膜除去には、通常、過硫酸ナトリウム溶液、過硫
酸アンモニウム溶液、シアン化合物溶液、硫酸-過酸化
水素水溶液などを用いることができる。また、導体部分
が導電性金属粉を含むガラスペーストから形成されたも
のである場合には、通常、アルカリ溶液やフッ化物溶液
等を用いてガラスエッチングを行う。この処理も常法に
従えばよい。
After the degreasing treatment, the oxide film on the surface of the conductor is usually removed. However, when Mo, W, etc. are degreased with an alkaline degreasing agent, this step can be omitted.
For removing the oxide film, a sodium persulfate solution, an ammonium persulfate solution, a cyanide compound solution, a sulfuric acid-hydrogen peroxide aqueous solution or the like can be usually used. When the conductor portion is formed of a glass paste containing conductive metal powder, glass etching is usually performed using an alkaline solution, a fluoride solution or the like. This process may be performed according to a conventional method.

【0025】次いで、必要に応じて酸洗を行う。酸洗に
ついても常法に従えば良く、通常、塩酸、硫酸、硝酸な
どの鉱酸を、酸濃度として0.1〜5mol/l程度含
む水溶液中に被めっき物を浸漬すればよい。処理温度
は、室温〜40℃程度とすることが好ましく、処理時間
は 5秒〜2分間程度とすればよい。
Next, if necessary, pickling is performed. The pickling may be carried out according to a conventional method. Usually, the object to be plated may be immersed in an aqueous solution containing a mineral acid such as hydrochloric acid, sulfuric acid or nitric acid in an acid concentration of about 0.1 to 5 mol / l. The treatment temperature is preferably room temperature to about 40 ° C., and the treatment time may be about 5 seconds to 2 minutes.

【0026】前処理を行った後、被めっき物を本発明の
触媒液に接触させることによって、被めっき物に触媒を
付与することができる。被めっき物を触媒液に接触させ
る方法については、特に限定はないが、通常、触媒液中
に被めっき物を浸漬すればよい。
After the pretreatment, the object to be plated is brought into contact with the catalyst solution of the present invention, so that the catalyst can be applied to the object to be plated. The method of bringing the object to be plated into contact with the catalyst solution is not particularly limited, but normally, the object to be plated may be immersed in the catalyst solution.

【0027】触媒液のpHについては特に限定的ではな
いが、通常、pH0.5〜12.5程度とすれば良く、
pH1.5〜11程度とすることが好ましく、pH2〜
10程度とすることがより好ましい。触媒液の温度や処
理時間についても限定的ではないが、通常、0〜90℃
程度、好ましくは5〜80℃程度、より好ましくは15
〜75℃程度の触媒液中に被めっき物を5秒〜2時間程
度浸漬すればよく、一般的には、15秒〜30分程度の
処理時間が実用的である。
The pH of the catalyst solution is not particularly limited, but normally, the pH may be about 0.5 to 12.5,
The pH is preferably about 1.5 to 11, and the pH is 2 to
It is more preferable to set it to about 10. The temperature of the catalyst solution and the treatment time are not limited, but are usually 0 to 90 ° C.
Degree, preferably about 5 to 80 ° C., more preferably 15
The object to be plated may be immersed in the catalyst solution at about 75 ° C. for about 5 seconds to 2 hours, and generally, a treatment time of about 15 seconds to 30 minutes is practical.

【0028】上記した方法で触媒を付与した後、必要に
応じて酸洗を行う。特に、導体部分に以外の絶縁体部分
にも無電解めっき析出が生じ易い材質の場合には、酸洗
を行うことによって、導体部分以外への無電解めっきの
析出を抑制することができる。酸洗処理は、例えば、通
常、塩酸、硫酸、硝酸などの鉱酸を、酸濃度として0.
1〜5mol/l程度含む水溶液中に被めっき物を浸漬
すればよい。処理温度は、室温〜40℃程度とすること
が好ましく、処理時間は 5秒〜2分間程度とすればよ
い。
After applying the catalyst by the above-mentioned method, pickling is performed if necessary. Particularly, in the case of a material in which electroless plating deposition is likely to occur also in an insulator portion other than the conductor portion, pickling can suppress the deposition of electroless plating on portions other than the conductor portion. In the pickling treatment, for example, a mineral acid such as hydrochloric acid, sulfuric acid or nitric acid is usually used as an acid concentration of 0.
The object to be plated may be immersed in an aqueous solution containing about 1 to 5 mol / l. The treatment temperature is preferably room temperature to about 40 ° C., and the treatment time may be about 5 seconds to 2 minutes.

【0029】上記した方法で触媒を付与した後、常法に
従って無電解めっきを行うことによって、導体部分と絶
縁体部分から構成される物品について、導体部分にのみ
無電解めっき皮膜を形成することができる。無電解めっ
きの種類については、特に限定的ではないが、通常、無
電解銅めっき、無電解ニッケルホウ素めっき、無電解ニ
ッケルリンめっき等が主として使用される。無電解めっ
きの条件については、常法に従えばよい。無電解めっき
の膜厚については、被めっき物の用途などに応じて適宜
決めれば良く、例えば、導体パターンが形成された電子
部品基板を被めっき物とする場合には、通常、3〜10
μm程度のめっき厚とする場合が多い。
After the catalyst is applied by the above-mentioned method, electroless plating is carried out according to a conventional method, whereby an electroless plating film can be formed only on the conductor part of the article composed of the conductor part and the insulator part. it can. The type of electroless plating is not particularly limited, but usually electroless copper plating, electroless nickel boron plating, electroless nickel phosphorus plating, etc. are mainly used. Regarding the conditions of electroless plating, a conventional method may be used. The film thickness of the electroless plating may be appropriately determined according to the application of the object to be plated, and, for example, when an electronic component substrate having a conductor pattern is used as the object to be plated, it is usually 3 to 10
In many cases, the plating thickness is about μm.

【0030】[0030]

【発明の効果】本発明の無電解めっき用触媒液は、導体
部分と絶縁体部分とから構成される物品を被めっき物と
する場合に、導体部分にのみ無電解めっき用触媒を付与
するために適した無電解めっき用触媒である。しかも導
体部分に対しては、優れた触媒活性を付与できるので、
導体部分に無電解めっきの不析出部分が生じることを防
止できる。
The catalyst solution for electroless plating of the present invention imparts the catalyst for electroless plating only to the conductor portion when an article composed of the conductor portion and the insulator portion is to be plated. It is a catalyst for electroless plating suitable for. Moreover, since excellent catalytic activity can be imparted to the conductor portion,
It is possible to prevent a non-precipitated portion of electroless plating from occurring in the conductor portion.

【0031】本発明の触媒液を用いることによって、例
えば、導体パターンが形成された電子部品基板を被めっ
き物とする場合に、基板上の絶縁体部分へのめっき拡が
りや導体パターン上におけるスキップ現象が抑制され、
ファインパターンを形成することが可能となる。しか
も、本発明の触媒液は、触媒付与処理槽への触媒金属の
吸着が少なく、長期間安定に使用し得る触媒液である。
By using the catalyst solution of the present invention, for example, when an electronic component substrate on which a conductor pattern is formed is used as an object to be plated, the spread of plating on the insulator portion on the substrate and the skip phenomenon on the conductor pattern. Is suppressed,
It becomes possible to form a fine pattern. In addition, the catalyst liquid of the present invention is a catalyst liquid that is less adsorbed to the catalyst-providing treatment tank and can be used stably for a long period of time.

【0032】[0032]

【実施例】以下、実施例を挙げて本発明をさらに詳細に
説明する。
EXAMPLES The present invention will be described in more detail with reference to examples.

【0033】実施例1 被めっき物として、W、Mo又はCuからなる導電性金
属粉を含むガラスペーストをアルミナ板上に塗布し、焼
き付ける方法で導体パターンを形成したセラミックス基
板、及びガラスエポキシ樹脂上に電気銅めっき皮膜によ
る導体パターンを形成したガラスエポキシ基板を用い
た。いずれの基板についても、導体パターンの幅は50
μmとし、導体パターン間の絶縁体部分の幅も50μm
とした。
Example 1 As a material to be plated, a glass paste containing a conductive metal powder of W, Mo or Cu was applied on an alumina plate and baked to form a ceramic substrate on which a conductor pattern was formed, and on a glass epoxy resin. A glass epoxy substrate on which a conductor pattern was formed by electrolytic copper plating was used. The width of the conductor pattern is 50 for both substrates.
and the width of the insulator part between the conductor patterns is 50 μm.
And

【0034】まず、前処理として、導電性金属粉を含む
ガラスペーストで導体パターンを形成したセラミックス
基板については、 水酸化ナトリウム30g/l水溶液
中に60℃で5分間浸漬して脱脂処理を行った後、35
%塩酸100ml/l水溶液中に25℃で1分間浸漬し
て酸洗を行った。また、電気銅めっきによる導体パター
ンを形成したガラスエポキシ基板については、酸性脱脂
剤(商標名:アシッドクリーン115、奥野製薬工業
(株)製)に45℃で5分間浸漬して脱脂処理を行った
後、過硫酸ナトリウム150g/l水溶液中に25℃で
1分間浸漬してエッチングを行い、その後、35%塩酸
100ml/l水溶液中に25℃で1分間浸漬して酸洗
を行った。
First, as a pretreatment, a ceramic substrate having a conductor pattern formed of a glass paste containing a conductive metal powder was subjected to a degreasing treatment by immersing it in an aqueous solution of 30 g / l of sodium hydroxide at 60 ° C. for 5 minutes. After 35
It was pickled by immersing it in a 100 ml / l aqueous solution of 100% hydrochloric acid at 25 ° C. for 1 minute. Further, the glass epoxy substrate on which the conductor pattern was formed by electrolytic copper plating was subjected to degreasing treatment by immersing it in an acidic degreasing agent (trade name: Acid Clean 115, manufactured by Okuno Chemical Industries Co., Ltd.) at 45 ° C. for 5 minutes. Then, it was immersed in an aqueous solution of 150 g / l of sodium persulfate at 25 ° C. for 1 minute for etching, and then immersed in an aqueous solution of 100 ml / l of 35% hydrochloric acid for 1 minute at 25 ° C. to perform pickling.

【0035】次いで、下記表1に示す組成及び液温の触
媒液中に5分間浸漬して触媒付与操作を行った後、35
%塩酸100ml/l水溶液中に25℃で1分間浸漬し
て酸洗を行った。
Next, after the catalyst application operation was carried out by immersing in a catalyst solution having the composition and solution temperature shown in Table 1 below for 5 minutes, 35
It was pickled by immersing it in a 100 ml / l aqueous solution of 100% hydrochloric acid at 25 ° C. for 1 minute.

【0036】その後、下記表2に示す無電解めっき処理
を行った。無電解Ni−Bめっきについては、商標名:
トップケミアロイ66(奥野製薬工業(株)製)の無電
解Ni−Bめっき液を用い、65℃の液温で60分間め
っき液中に浸漬して、約7μmのめっき皮膜を形成し
た。無電解Ni−Pめっきについては、商標名:ICP
ニコロンGM(E)(奥野製薬工業(株)製)の無電解
Ni−Pめっき液を用い、80℃の液温で30分間めっ
き液中に浸漬して、約7μmのめっき皮膜を形成した。
無電解銅めっきについては、商標名:ASHカッパーA
(奥野製薬工業(株)製)の無電解 Cuめっき液を用
い、55℃の液温で140分間めっき液中に浸漬して、
約7μmのめっき皮膜を形成した。
After that, the electroless plating treatment shown in Table 2 below was performed. Trade names for electroless Ni-B plating:
Using an electroless Ni-B plating solution of Top Chemialoy 66 (manufactured by Okuno Chemical Industries Co., Ltd.), it was immersed in the plating solution at a solution temperature of 65 ° C for 60 minutes to form a plating film of about 7 µm. For electroless Ni-P plating, trade name: ICP
Nicolon GM (E) (Okuno Pharmaceutical Co., Ltd.) electroless
A Ni-P plating solution was used and immersed in the plating solution at a solution temperature of 80 ° C. for 30 minutes to form a plating film of about 7 μm.
For electroless copper plating, trade name: ASH Copper A
Using an electroless Cu plating solution (manufactured by Okuno Chemical Industries Co., Ltd.), immersing it in the plating solution at a liquid temperature of 55 ° C. for 140 minutes,
A plating film of about 7 μm was formed.

【0037】上記した各方法で形成した無電解めっき皮
膜について、下記の方法でパターン外析出、めっき欠
け、浴安定性を評価した。結果を下記表2に示す。 (1)パターン外析出 倍率100倍の顕微鏡により観察し、パターン外析出が
2μm以上の場合をパターン外析出「有」とし、パター
ン外析出が2μm未満の場合をパターン外析出「無」と
して評価した。 (2)めっき欠け 倍率100倍の顕微鏡により観察し、導体パターン上に
完全にめっきが析出している場合をめっき欠け「無」、
導体パターン上に一箇所でもめっき未析出部分がある場
合をめっき欠け「有」、導体パターン上にめっきが全く
析出していない場合を「未析出」として評価した。 (3)浴安定性 無電解めっき用触媒液を処理温度のままで7日放置し、
目視で析出物があった場合を「沈殿発生」、また析出物
は無いが貴金属濃度の低下が5 %以上あった場合を
「壁面に吸着」、貴金属濃度の低下が5 %未満の場合
を「安定」として評価した。
With respect to the electroless plating film formed by each of the above-mentioned methods, the out-of-pattern deposition, plating chipping and bath stability were evaluated by the following methods. The results are shown in Table 2 below. (1) Observed under a microscope with a magnification of 100 times out of pattern and observed when the precipitation outside the pattern was 2 μm or more as “existence of precipitation outside the pattern”, and when the precipitation outside the pattern was less than 2 μm as “absence” outside the pattern. . (2) If the plating is completely deposited on the conductor pattern by observing with a microscope with a plating deficiency of 100 times, the plating deficiency is "none",
The case where there was even one part where no plating was deposited on the conductor pattern was evaluated as "presence of plating", and the case where no plating was deposited on the conductor pattern was evaluated as "not deposited". (3) Bath stability Leave the electroless plating catalyst solution at the treatment temperature for 7 days,
"Precipitation has occurred" when there is a precipitate visually, "adsorption on the wall" when there is no precipitation but the decrease in precious metal concentration is 5% or more, and "decrease" when the decrease in precious metal concentration is less than 5%. It was evaluated as "stable".

【0038】[0038]

【表1】 [Table 1]

【0039】[0039]

【表2】 [Table 2]

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K022 AA02 AA42 BA04 BA08 BA14 BA16 BA31 BA32 BA35 CA06 CA20 CA21 CA22 DA01 5E343 AA02 AA15 AA17 AA23 BB24 BB39 BB40 BB72 CC43 DD03 DD33 EE02 EE52 ER04 GG20   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4K022 AA02 AA42 BA04 BA08 BA14                       BA16 BA31 BA32 BA35 CA06                       CA20 CA21 CA22 DA01                 5E343 AA02 AA15 AA17 AA23 BB24                       BB39 BB40 BB72 CC43 DD03                       DD33 EE02 EE52 ER04 GG20

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】(i)金化合物、銀化合物、パラジウム化
合物、ルテニウム化合物、ロジウム化合物、白金化合物
および銅化合物からなる群から選ばれた少なくとも一種
の化合物、並びに(ii)6価のイオウを含む水溶性窒素
化合物を含有する水溶液からなる無電解めっき用触媒
液。
1. At least one compound selected from the group consisting of (i) gold compounds, silver compounds, palladium compounds, ruthenium compounds, rhodium compounds, platinum compounds and copper compounds, and (ii) hexavalent sulfur. A catalyst liquid for electroless plating comprising an aqueous solution containing a water-soluble nitrogen compound.
【請求項2】(i)金化合物、銀化合物、パラジウム化
合物、ルテニウム化合物、ロジウム化合物、白金化合物
および銅化合物からなる群から選ばれた少なくとも一種
の化合物を1×10-5〜0.1mol/l、並びに(i
i)6価のイオウを含む水溶性窒素化合物を2×10-5
〜0.5mol/l含有する水溶液からなる無電解めっ
き用触媒液。
2. At least one compound selected from the group consisting of (i) a gold compound, a silver compound, a palladium compound, a ruthenium compound, a rhodium compound, a platinum compound and a copper compound, in an amount of 1 × 10 −5 to 0.1 mol / mol. l, and (i
i) Add water-soluble nitrogen compound containing hexavalent sulfur to 2 × 10 −5
A catalyst solution for electroless plating, which comprises an aqueous solution containing 0.5 mol / l.
JP2001277059A 2001-09-12 2001-09-12 Catalyst solution for electroless plating Expired - Fee Related JP4669982B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003105549A (en) * 2001-09-28 2003-04-09 Kyocera Corp Circuit wiring board and method of manufacturing the same
WO2010004856A1 (en) * 2008-07-08 2010-01-14 日本高純度化学株式会社 Catalyst-imparting liquid for palladium plating
JP2015086429A (en) * 2013-10-30 2015-05-07 ローム・アンド・ハース電子材料株式会社 Catalyst solution for electroless plating

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JPH01149971A (en) * 1987-10-27 1989-06-13 Omi Internatl Corp Catalyst for electroless plating treatment
JP2000289167A (en) * 1999-02-03 2000-10-17 Ube Ind Ltd Base film for chemical plating and plated film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149971A (en) * 1987-10-27 1989-06-13 Omi Internatl Corp Catalyst for electroless plating treatment
JP2000289167A (en) * 1999-02-03 2000-10-17 Ube Ind Ltd Base film for chemical plating and plated film

Cited By (6)

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