JP2003077922A - Method for manufacturing thin film pattern and method for manufacturing microdevice using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film pattern having a narrow pattern, which is independent of the kind of a resist film and an optical limit of an exposure apparatus or the like, and thus to further provide a method for making a thin film patterning narrower. SOLUTION: After selectively forming the resist film 13 on a main surface 11A of a substrate 11, a film 12 to be patterned is formed on the substrate 11 so as to cover this resist film 13. Then parts existing on an upper surfaces 13A of the resist film 13 and on the main surfaces 11A of the substrate 11 in the film 12 to be patterned are removed by means of a dry etching processing, and thus the upper surfaces 13A of the resist film 13 is exposed. Subsequently, by removing the resist film 13 from the exposed upper surfaces 13A, the thin film pattern 15 consisting of parts 12C, which adhere to side surfaces 13C of the resist film 13 in the film 12 to be patterned, is formed.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method for producing a thin film pattern, a method for patterning a thin film, and a method for producing a microdevice.

[0002]

2. Description of the Related Art Conventionally, a thin film pattern for patterning a thin film is produced by forming a resist film on a uniformly formed film to be patterned, and etching the film to be patterned using the resist film as a mask. It was applied.

21 to 24 are views for explaining a conventional method for producing a thin film pattern. First, as shown in FIG. 21, Ta is formed on a predetermined substrate 1 made of Si or the like.
The patterned film 2 made of, for example, is uniformly formed by a sputtering method or a plating method. Next, as shown in FIG. 22, after applying a resist film on the film to be patterned 2, exposure and development processing is performed to selectively form the resist film 3.

Then, as shown in FIG. 23, a resist film 3 is formed.
Using the as a mask, the film to be patterned 2 is subjected to dry etching treatment such as reactive ion etching (RIE) or ion milling to pattern the film to be patterned 2. Then, the resist film 3 is peeled off using an organic solvent or is removed by ashing,
The thin film pattern 5 as shown in FIG. 24 is obtained.

[0005]

However, in the conventional method as described above, the interval and density of the thin film pattern depend on the type of the resist film and the performance of the exposure device used during the exposure processing, and the resist film And the optical limit of the exposure device. For this reason, even if an attempt is made to form a very thin thin film pattern with a narrow line interval, the narrowing is naturally limited.

The present invention provides a method for producing a thin film pattern having a narrow line spacing and an extremely fine pattern by itself, regardless of the type of resist film and the optical limit of the exposure device, and thus the thin film patterning as a whole. It is also an object to provide a method of narrowing

[0007]

In order to achieve these objects, the first method for producing a thin film pattern of the present invention is such that a film surface substantially parallel to this main surface is formed on a main surface of a predetermined substrate. A step of selectively producing a resist film having vertical side surfaces, a step of forming a film to be patterned on the main surface of the substrate and the resist film, and a step of forming a film on the film surface of the resist film. By etching away the patterned film,
While exposing the film surface of the resist film, the patterning film formed on the main surface of the substrate is removed by etching to expose at least the main surface of the substrate located between the resist films. And a step of removing the resist film from the exposed film surface side of the resist film to form a thin film pattern consisting of the remainder of the film to be patterned.

By adopting such a manufacturing method,
It is possible to easily obtain a thin film pattern which is itself very fine and has a narrow line spacing. That is, since the film to be patterned adheres to the side surface of the resist film, if the resist film is removed and a thin film pattern is formed by the portion formed on the side surface of the resist film of the film to be patterned, the distance between the resist films is Also, a narrowed thin film pattern can be obtained.

Further, in the first method of manufacturing a thin film pattern according to the present invention, the thin film pattern is formed into a closed shape, and at least a part of the thin film pattern is removed to form an open thin film pattern. It may be included.

Furthermore, in the first method of manufacturing a thin film pattern according to the present invention, the interval between the open portions of the thin film pattern may be expanded. By forming in this way, the end portion of the formed thin film pattern can be bonded by a general technique and easily wired.

Further, in the first method for producing a thin film pattern according to the present invention, the film to be patterned may be formed by rotating a substrate containing a resist film while rotating. By forming in this way, the patterned film is reliably formed on the side surface of the resist film.

In order to achieve the above object, the second method for producing a thin film pattern according to the present invention comprises a step of forming an insulating film on a main surface of a predetermined substrate, and a resist selectively on the insulating film. A step of forming a film, and etching the insulating film using the resist film as a mask to expose the main surface of the substrate, and the insulating film is selectively formed from the insulating film,
Forming a pattern support member having a film surface substantially parallel to the main surface and a side surface substantially perpendicular to the main surface; forming a patterning target film on the main surface of the base and the pattern support member; A portion of the patterning film existing on the film surface of the pattern support member is removed by etching,
While exposing the pattern support member, a portion of the film to be patterned that is present on the main surface of the base body is removed by etching to expose at least the main surface of the base body located between the pattern support members. And a step of forming a thin film pattern which is supported by the side surface of the pattern support member and is composed of the remaining portion of the film to be patterned.

By adopting such a process, it is possible to easily obtain a thin film pattern which is itself very fine and the line spacing is narrowed and which is supported by the pattern supporting member. That is, if the film to be patterned is attached also to the side surface of the pattern support member and if a thin film pattern is formed by the portion of the film to be patterned formed on the side surface of the pattern support member, the pattern film is narrower than the space between the resist films. A thin film pattern that has been made into a thin film can be obtained.

In the second method for producing a thin film pattern according to the present invention, the thin film pattern is formed into a closed shape, and at least a part of this is removed to form an open thin film pattern. Is also good.

It is also possible to form the thin film pattern so that the gap between the open portions is expanded. By forming in this way, the end portion of the formed thin film pattern can be bonded by a general technique and easily wired.

Further, the film to be patterned may be formed by rotating the substrate including the pattern supporting member while rotating. By forming in this way,
The patterned film is reliably formed on the side surface of the resist film.

In order to achieve the above object, the third method for producing a thin film pattern of the present invention is a step of forming an insulating film on the main surface of a predetermined substrate, and a resist selectively on the insulating film. A step of forming a film, and etching the insulating film using the resist film as a mask to expose the main surface of the substrate, and the insulating film is selectively formed from the insulating film,
A step of forming a pattern support member having a film surface substantially parallel to the main surface and a side surface substantially perpendicular to the main surface, and a step of selectively forming a second resist film so as to include a part of the pattern support member, A step of forming a film to be patterned on the main surface of the substrate, the pattern support member, and the second resist film; and a step of removing the second resist film.
A portion of the film to be patterned that is present on the film surface of the pattern support member is removed by etching to expose the pattern support member, and a portion of the film to be patterned that is present on the main surface of the substrate. Is removed by etching to expose at least the main surface of the substrate located between the pattern support members, and the at least part of the patterned film supported by the side surfaces of the pattern support member is open. And a step of forming a thin film pattern composed of the rest.

By adopting such a process, the thin line pattern can be easily obtained by itself being extremely fine and the line interval narrowed, and further supported by the pattern support member. That is, if the film to be patterned is attached also to the side surface of the pattern support member and if a thin film pattern is formed by the portion of the film to be patterned formed on the side surface of the pattern support member, the pattern film is narrower than the space between the resist films. A thin film pattern that has been made into a thin film can be obtained.

In the third thin film manufacturing method, the pattern supporting member may be partially included in the second thin film in advance.
Since the resist film of No. 2 is formed, a part of the thin film pattern can be easily opened only by removing the second resist film without requiring other complicated steps.

The interval between the open portions of the thin film pattern thus formed may be expanded. By forming in this way, the end portion of the formed thin film pattern can be bonded by a general technique and easily wired.

The film to be patterned may be formed by rotating a substrate including a pattern support member. By forming in this way,
The patterned film is reliably formed on the side surface of the resist film.

Further, the microdevices may be manufactured by using the listed thin film patterning methods. By using such a manufacturing method, it is possible to obtain a microdevice having an extremely thin film pattern and a narrow line spacing.

The microdevice is even better if it is a thin film magnetic head. In order to obtain a narrowed thin film pattern, the present inventor has conducted earnest studies in order to obtain a very thin thin film pattern which itself has a narrowed line interval below the optical limit of an exposure device or the like. As a result, it has been conceived that after a resist film is formed in the conventional manner, a patterned film is formed so as to cover the resist film, and a thin film pattern is formed from the patterned film.

Therefore, according to the listed invention, it is possible to easily form a narrowed thin film pattern without depending on the kind of the resist film and the optical limit of the exposure device used for the exposure and development processing. .

The "base" in the present invention means Si
In addition to a substrate made of AlTiC or AlTiC, a base film made of a predetermined material is also included.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION [First Embodiment] The present invention will now be described in detail with reference to the drawings. 1 to 7 are process diagrams in the manufacturing method according to the first embodiment of the present invention. At first,
As shown in FIG. 1, a main surface 1 of a base 11 made of Si or the like
A resist film is formed on 1A by a spin coating method or the like, and then exposed and developed to selectively form a resist film 13. The width W of the resist film of the resist film 13
_R and spacing W _S are those characterizing defining a thin film pattern according to the conventional method described above. In addition, in FIG. 1, FIG.
1A shows a state in which the resist film 13 is selectively formed on the main surface 11A of FIG. 1A, and FIG. 1A shows a cross-sectional view taken along the line aa of FIG. 1B.

FIG. 2 is a diagram showing a step after FIG.
2B shows a state in which the film to be patterned is formed from the main surface side of the substrate 11, and FIG. 2A shows a sectional view taken along line bb of FIG. 2B. As shown in FIG. 2, the patterned film 12 made of Ta or the like is formed on the main surface 11A of the base 11 and the resist film 13 by a sputtering method,
It is formed by the CVD method or the electroless plating method.

When the resist film 13 itself is relatively narrowed and the patterning film 12 is to be formed by, for example, a sputtering method, the patterning film 12 is particularly formed on the side surface 13C of the resist film 13. It may not adhere sufficiently. In such a case, it is preferable to perform the film forming process of the film to be patterned 12 while rotating the substrate 11 including the resist film 13. Thus, even when such interval W _S of the resist film 13 is sufficiently narrowed, the side surface of the resist film 13 13
The patterned film 12 can be attached to C.

FIG. 3 is a diagram showing a step after FIG.
3B shows a state in which the patterning target film is etched from the main surface side of the substrate 11, and FIG.
A cross-sectional view taken along line c is shown. As shown in FIG. 3, the film to be patterned 12 formed on the entire surface is subjected to a dry etching process such as RIE or ion milling. When performing the dry etching process, directivity is imparted to the ion beam or the like, and the portion 12A existing on the upper surface 13A of the resist film 13 of the film to be patterned 12 and the main surface 11A of the base 11 between the resist film 13 and the portion 12A. And the portion 12B existing in 1) is removed. As a result, in the patterned film 12, the portion 12C attached to the side surface 13C of the resist film 13 remains.

FIG. 4 is a diagram showing a step after FIG.
4B shows a state in which the resist film is removed from the main surface side of the substrate 11, and FIG. 4A shows a cross-sectional view taken along the line dd of FIG. 4B. The resist film 13 is removed by exposing the exposed upper surface 13A.
It can be easily removed by immersing it in an organic solvent such as acetone and dissolving it. Further, it can be easily removed by subjecting the exposed upper surface 13A of the resist film 13 to an ashing process. The ashing process generally means a process of removing the organic thin film portion by ashing using oxygen plasma.

The ashing process can also be performed by adding at least one of a fluorine-based gas and a nitrogen / hydrogen mixed gas to oxygen gas and using plasma of these mixed gases. As a result, the ashing speed is increased, and the ashing process can be efficiently performed. Examples of the fluorine-based gas include fluorine tetrachloride.

Through these steps, the patterned film 12 has only the portion 12C attached to the side surface 13C of the resist film 13 and the thin film pattern 14 is formed.

FIG. 5 is a diagram showing a step after FIG.
5B shows a state in which a thin film pattern is formed from the main surface side of the substrate 11, and FIG. 5A shows a cross-sectional view taken along the line ee of FIG. 5B. Since the thin film pattern 14 shown in FIG. 4 is composed of the portion 12C of the film to be patterned 12 that remains attached to the side surface 13C of the resist film 13, after the resist film 13 is removed as shown in FIG. Also in the above, a closed shape is formed so as to surround the resist film 13. Therefore, one side 14A and the other side 14C of the thin film pattern 14 are etched and removed through a predetermined mask to leave the side portion 14B, and the thin film pattern 15 shown in FIG. Obtainable. In this example, the two portions on one side and the other side are removed by etching, but the present invention is not limited to this, and at least one open portion may be formed.

The space between the finally obtained thin film patterns 15 is such that the patterning target film 1 with the original resist film 13 interposed therebetween is formed.
The spacing _W Q (= _{W R)} by 2C, the original resist film 1
The distance W _P is due to the patterned film 12C not sandwiching 3. The distance _{W P,} to the distance _{W S} of the resist film 13, the thickness W of the patterned film adhering to the side surface 13C
It is narrowed by _T. Interval W _S determined by the type and the exposure unit of the optical limit of the resist film
Since there are two patterns in between, it can be seen that the gap between the thin film patterns produced by the method of the present invention is sufficiently narrowed as compared with the conventional thin film pattern. Moreover, the width of the thin film pattern according to the prior art was controlled by the width of the resist, but the width of the thin film pattern according to the present invention can be controlled by the film thickness W _T , which is more sufficient than the pattern according to the prior art. Since it can be formed extremely thinly, a very fine pattern can be formed by these synergistic effects.

Further, as shown in FIG. 6, by forming a resist film whose one side is enlarged, one side 16A can be enlarged and one side 16B can form a thin film pattern 16 having a predetermined interval. The shape of the thin film pattern can be variously modified depending on design matters.

Further, when a narrowed thin film pattern as shown in FIG. 5 is used and a terminal for plating or the like is to be formed on one side of the thin film pattern 15, a fine processing technique with high precision can be used. There are cases where bonding or the like is difficult.

[0037] In such a case, one side as shown in FIG. 6, the other side W is expanding spacing W _A resist film
_{As S} , a resist pattern having a narrowed interval as described above is used. Then, using the same technique as described above, the one side 16A and the other side 16C of the thin film pattern 16 are removed by etching through a predetermined mask to obtain a thin film pattern 17 with one side enlarged as shown in FIG. You can solve it.

[0038] In this case, for example, whereas the interval W _A side of the resist film is expanded compared with the interval W _S of the resist film on the other side, whereas the interval W _B side of the thin film pattern on the other side a thin film A pattern larger than the pattern interval W _P is obtained. In this case, a resist film width on one side of itself and W _C of the spread, on the other side, which is the better since the narrow width W _Q of the aforementioned street.

On the one side 17A, the above-mentioned terminals and the like can be formed relatively easily by forming so that the line spacing is enlarged. On the other hand, the other side by using the technique described above, which is formed between the resist film, it is possible to use the distance W _P by the film to be patterned 17C the distance is narrowed, the dense. Further, the distance W _P is smaller than the distance W _S of the resist film 13 from the side surface 1.
Since the film to be patterned attached to 3C is narrowed by twice the thickness W _T , it is more precise.

[Second Embodiment] FIGS. 8 to 14 show a book.
Process drawing in the manufacturing method according to the second embodiment of the invention
Is. FIG. 8 is a cross-sectional view of the base, and an insulating film is formed on the base.
A state of forming a film is shown. As shown in FIG.
On the main surface 21A of the base body 21 made of SiO_Two, Al_TwoO
_ThreeInsulating film 26A made of, for example, sputtering method, CV
It is uniformly formed by the D method or the like.

FIG. 9 is a diagram showing a step after FIG.
9B shows a state in which a resist film is formed on the insulating film from the main surface side of the base body 21, and FIG. 9A shows a cross-sectional view taken along line ff of FIG. 9B. The insulating film 2 is formed on the main surface 21A of the base 21.
After 6A is formed, a resist film is uniformly formed on the insulating film 26A by a spin coating method or the like, and then an exposure and development process is performed to selectively form the resist film 23. In this example, the resist width is W _R and the resist interval is W _S.

FIG. 10 is a diagram showing a step after FIG. 9, in which FIG. 10B shows a state in which an insulating film is selectively formed from the main surface side of the substrate 21, and FIG. 10A shows FIG. 10B. G-
A cross-sectional view taken along line g is shown. In this step, the insulating film 26A is subjected to dry etching treatment such as RIE and ion milling using the resist film 23 as a mask to divide the insulating film 26A and selectively pattern the insulating film 26A to form a pattern support member 26 made of an insulating material. To form. Assuming could ideally etched, the width of the resist W _R
Next to resist interval is _{W S.} In this case, the slight deviation is within the error range. By the dry etching process, the thickness of the resist film 23 used as a mask is also reduced from the initial state.

FIG. 11 is a diagram showing a step after FIG.
In FIG. 11, FIG. 11B shows a state in which the pattern support member is faced from the main surface side of the base body 21, and FIG. 11A shows h of FIG. 11B.
A cross-sectional view taken along line -h is shown. In this step, the remaining resist film 23 is dissolved and removed with an organic solvent or removed by an ashing process to form the pattern support member 26 composed of the divided insulating film 26A.

When the ashing process is used, as described above, it is preferable to add at least one of a fluorine-based gas and a nitrogen / hydrogen mixed gas to oxygen gas and use plasma of these mixed gases. As a result, the ashing speed is increased, and the ashing process can be efficiently performed. As the fluorine-based gas, fluorine tetrachloride can be exemplified as described above.

FIG. 12 is a diagram showing a step after FIG.
12B shows a state in which a thin film to be patterned is formed from the main surface side of the substrate 21, and FIG.
2 is a cross-sectional view taken along line ii of FIG. In this step, the patterning target film 22 is formed on the substrate 21 so as to cover the pattern support member 26 by a sputtering method, a CVD method, a plating method, or the like.

[0046] As described above, when the distance W _S of the pattern support member 26 is narrowed, for example,
When the patterning target film 22 is formed by the sputtering method, the patterning target film 22 may not sufficiently adhere to the side surface 26C of the pattern support member 26. In this case, as described above, the pattern support member 26
The patterned film 2 while rotating the substrate 21 containing
It is preferable to perform the film forming process of 2. As a result, even if the space is narrowed on the pattern support member 26, the patterning target film 22 can be sufficiently attached to the side surface 26C.

FIG. 13 is a diagram showing a step after FIG.
13B shows a state in which the patterned thin film on the pattern support member and the patterned film on the principal surface of the substrate are removed from the principal surface side of the substrate 21, and FIG.
2 is a cross-sectional view taken along line j-j of FIG. In this step, the base 2 between the pattern support member 26 and the portion 22A of the patterning target film 22 existing on the upper surface 26A of the pattern support member 26.
The portion 22B existing on the main surface 21A of No. 1 is removed by the dry etching having the directivity as described above. In this way, the thin film pattern 24 composed of the portion of the patterning target film 22 attached to the side surface 26C of the pattern support member 26 is formed.

Since the film-to-be-patterned 22 is formed so as to cover the pattern supporting member 26, the thin film pattern 24 constituted by the portion of the film-to-be-patterned 22 attached to the side surface 26C of the pattern supporting member 26 is formed as shown in FIG. 13B. As shown in FIG. 3, the pattern support member 26 is in a continuous closed shape around the pattern support member 26.

Therefore, one side 2 of the thin film pattern 24
4A and the other side 24C are removed by etching through a predetermined mask to leave the side portion 24B of the thin film pattern 24, thereby forming a thin film pattern 25 having one side and the other side opened as shown in FIG. To do. In this example, the two portions on one side and the other side are removed by etching, but the present invention is not limited to this, and at least one open portion may be formed.

The thin film pattern 25 shown in FIG.
Since the thin film pattern 25 is supported by the pattern supporting member 26, the pattern supporting member 26 provides sufficient strength even when the thin film pattern 25 itself does not have sufficient strength.

Also in the manufacturing method according to the second embodiment of the [0051] present invention, two thin film pattern to spacing W _S of the pattern support member 26 is equal to the distance W _S of the resist film is formed, therefore, the 2 The distance W _P between the thin film patterns of the book is
It will be formed is further narrower than the interval W _S of the pattern support member. In addition, the width of the thin film pattern according to the conventional technique is controlled by the width of the resist, but the width of the thin film patterns 24 and 25 according to the present invention can be controlled by the film thickness W _T , which is different from the pattern according to the conventional technique. Since they can be formed sufficiently thin, a very dense pattern can be formed by the synergistic effect of these.

Also in the manufacturing method according to the second embodiment of the present invention, as the distance between the thin film patterns 25 is reduced, the distance between the end portions of the thin film pattern is also reduced. For this reason, for example, when a terminal for plating or the like is to be formed on the thin film pattern 25, bonding or the like may be difficult even by a highly accurate fine processing technique.

Therefore, even in such a case,
A resist film and a pattern supporting member whose one side is enlarged are formed, and in the same manner as shown in FIGS. 6 and 7, one side is enlarged and a thin film pattern having a close spacing is formed on the other side. This makes it possible to relatively easily form terminals and the like on one side of the thin film pattern, and it is possible to easily form a predetermined thin film pattern on the thin film pattern by a plating method or the like, and on the other side. A thin film pattern that is dense and has a small space.

When a physical vapor deposition method such as a sputtering method is used, the vapor deposition material is not sufficiently deposited in the narrowed thin film pattern due to its directivity, and a patterned thin film is obtained. May not be possible. In this case, it is preferable to perform the film forming process while rotating the thin film pattern. by this,
Even if the film forming process having the above-described directivity is performed, the vapor deposition material can be deposited in a sufficient amount in the thin film pattern, and the thin film can be patterned well.

[Third Embodiment] FIGS. 15 to 20 show
It is a flowchart of a manufacturing method according to a third embodiment of the present invention. This example is the same as the manufacturing method according to the second embodiment up to the intermediate steps. That is, SiO ₂ , Al ₂ O _{3 is formed} on the main surface 21A of the base 21 made of Si or the like.
An insulating film made of, for example, is uniformly formed by a sputtering method, a CVD method, or the like. Then, a resist film is uniformly formed on the insulating film by a spin coating method or the like, and then an exposure and development process is performed to selectively form the resist film. Then, by using the resist film as a mask, the insulating film is subjected to dry etching treatment such as RIE and ion milling to divide and pattern the insulating film to form a pattern support member 36 made of an insulating material.

Thereafter, the remaining resist film is dissolved and removed with an organic solvent or removed by ashing to form a pattern support member 36 composed of the divided insulating film. Thus, the state shown in FIG. 15 is obtained. As in the above case, during the ashing process,
It is preferable to add at least one of a fluorine-based gas and a nitrogen / hydrogen mixed gas to the oxygen gas.

In FIG. 15, FIG. 15B is a view as seen from the main surface 21A side of the base body 21, and FIG. 15A is FIG.
3 is a cross-sectional view taken along line kk of FIG. In this example, the width of the pattern support member is W _R and the interval of the pattern support member is W _S.
I am trying.

FIG. 16 shows a state in which a resist film is selectively formed in the state of FIG. 15, FIG. 16B is a view as seen from the main surface 21A side of the substrate 21, and FIG. 16A is FIG. 16B.
2 is a cross-sectional view taken along line l-l of FIG. In the state shown in FIG. 15, a resist film is uniformly formed and subjected to exposure and development processing, so that one side 36A of the pattern support member 36,
The second resist film 37 is formed so as to slightly cover the other side 36C.
Are selectively formed. At that time, the second resist film 37
The lower layer is PM to facilitate the lift-off described later.
GI (Polymethylglutarimid)
It is preferable to use a two-layer resist pattern composed of e).

FIG. 17 shows a state in which a film to be patterned is formed on the entire surface in the state of FIG. 16, and FIG.
17A is a view as seen from the main surface 21A side of FIG.
FIG. 7B is a cross-sectional view taken along line MM of 7B. In this step, the pattern support member 36 and the second resist film 37 are covered on the substrate 21 by the sputtering method,
The patterned film 32 is formed by the CVD method, the plating method, or the like. In the case where the interval W _S of the pattern support member 36 is narrowed, for example, in order to form a film to be patterned 32 by sputtering, the film to be patterned 3 on the side surface 36C of the pattern support member 36
2 may not adhere sufficiently.

In this case, as described above, it is preferable to perform the film formation process of the film-to-be-patterned 32 while rotating the substrate 21 including the pattern support member 36 and the second resist film 37. As a result, even when the space between the pattern support members 36 is narrowed, the patterning target film 32 can be sufficiently attached to the side surface 36C.

FIG. 18 shows a state in which the resist film is removed in the state shown in FIG. 17, FIG. 18B is a view as seen from the main surface 21A side of the base 21, and FIG. 18A is a view of FIG. 18B. It is sectional drawing in the nn line. In the above process, the second resist film 37 formed so as to be liftable off is removed by liftoff. Therefore, the main surface 21A of the base 21 and the second resist film 3 of the pattern support member 36 are
The patterning target film 32 is still formed directly on the portion not covered with 7. Further, in the portion where the second resist film 37 covers the main surface 21A of the base 21 and the pattern support member 36, the patterned film 32 is the second film.
Since it is lifted off together with the resist film 37, the main surface 21A of the base 21 and the pattern support member 36 are exposed.

FIG. 19 is a diagram showing a step after FIG.
19B shows a state in which the patterned thin film on the pattern support member and the patterned film on the principal surface of the substrate are removed from the principal surface side of the substrate 21, and FIG. 19A shows FIG. 19B.
3 is a sectional view taken along line o-o of FIG. In this step, the base 2 between the pattern support member 36 and the portion 32A of the film to be patterned 32 existing on the upper surface 36A of the pattern support member 36.
The portion 32B existing on the first main surface 21A is removed by dry etching with directivity.
In this way, the pattern support member 36 of the film to be patterned 32
Forming a thin film pattern 35 composed of a portion attached to the side surface 36C of the.

In the above-mentioned process, since the pattern support member 36 is partially covered with the resist mask 37 described above, the thin film pattern 35 is not formed in this portion. Therefore, one side of the pattern support member 36 is not covered. And a thin film pattern having the other side opened. In this example, the resist mask 37 covers two places on one side and the other side to form the open part of the thin film pattern 35, but the present invention is not limited to this, and at least one open part may be formed.

The thin film pattern 35 shown in FIG.
Since the thin film pattern 35 is supported by the pattern support member 36, the pattern support member 36 provides sufficient strength even when the thin film pattern 35 itself does not have sufficient strength.

[0065] In the manufacturing method according to a third embodiment of the present invention also are two thin film pattern is formed on the spacing W _S of the pattern support member 36, thus spacing W _P of the thin film pattern of the two is It will be formed is further narrower than the interval W _S of the pattern support member. Moreover, although the width of the thin film pattern according to the conventional technique is controlled by the width of the resist, the width of the thin film patterns 34 and 35 according to the present invention can be controlled by the film thickness W _T , which is different from the pattern according to the conventional technique. Since they can be formed sufficiently thin, a very dense pattern can be formed by the synergistic effect of these.

Also in the manufacturing method according to the third embodiment of the present invention, as the distance between the thin film patterns 35 is reduced, the distance between the end portions of the thin film pattern is also reduced. For this reason, for example, when it is attempted to form a plating terminal or the like on the thin film pattern 35, it may be difficult to perform bonding or the like even with a highly precise microfabrication technique.

In such a case, as shown in FIG. 20, the resist film interval is enlarged on one side and the other side on the other side.
The pattern support member 38 narrowed as described above is used. Then, the problem can be solved by obtaining the thin film pattern 39 in which one side is enlarged by the same technique as described above.

[0068] In this case, for example, whereas the interval W _A side of the pattern support member 38 is expanded than the interval W _S of the other side of the pattern support member 38, whereas the interval W _B side of the thin film pattern The width W _P of the thin film pattern on the other side is enlarged. That is, on the one side 39A of the thin film pattern, the above-described terminals and the like can be formed relatively easily by forming the line intervals so as to increase. On the other side 39B of the thin film pattern, the space between the pattern supporting members 38 is narrowed, and two thin film patterns 39 are present between them, which makes the film very dense.

Further, this interval W _P is set to the resist film 13
Since it is narrowed by twice the thickness W _T of the thin film pattern 39 attached to the side surface of the pattern support member 38 with respect to the interval W _S , it is more precise.

Also in this case, when the physical vapor deposition method such as the sputtering method is used, the vapor deposition material is not sufficiently deposited in the narrowed thin film pattern due to its directivity, and the thin film pattern is patterned. It may not be possible to obtain a thin film. In this case, it is preferable to perform the film forming process while rotating the thin film pattern. With this, even if the film forming process having the above-described directivity is performed, the vapor deposition material can be deposited in a sufficient amount in the thin film pattern, and the thin film can be patterned well.

The patterning of a thin film using the thin film pattern manufactured according to the method of the present invention can be preferably used particularly in the step of manufacturing a microdevice, and particularly preferably in the step of manufacturing a thin film magnetic head. .

[0072]

EXAMPLES The present invention will be specifically described below based on examples. (Example 1) In this example, a thin film pattern was manufactured according to the manufacturing method according to the first embodiment of the present invention. A silicon substrate is used as a substrate, and a resist film is applied on the silicon substrate to a thickness of 0.5 μm.
Prebaking treatment was performed at 60 ° C. for 60 seconds.

Then, 20 mJ is applied to the resist film.
130 cm / cm ² of light for exposure treatment.
After heat treatment at 60 ° C. for 60 seconds, a development process was performed using an aqueous solution of tetraantimonium hydroxide to prepare a resist film having a repeating shape with a width of 0.18 μm and an interval of 0.18 μm. The developing treatment was performed by a paddle method, and after the developing solution was formed on the resist film by the development liquid drop, it was held for 60 seconds.

Then, while rotating the silicon substrate, a Ta film was formed to a thickness of 0.06 μm on the silicon substrate so as to cover the resist film. In addition, T
The film a is formed using a Ta target at a pressure of 1 mTorr.
r under the condition of argon gas flow rate of 10 sccm, 7
It was carried out by using a DC sputtering method with a power of 00 W applied.

Next, directional dry etching was performed on the Ta film to remove the portion of the Ta film attached on the resist film and on the bottom of the resist film. In addition,
In the directional dry etching, CF ₄ gas as an etching gas was introduced into the etching apparatus at a flow rate of 80 sccm, and the pressure was set to 2 mTorr.
The CF ₄ gas was turned into plasma by introducing a 0 W microwave. Then, by applying RF 10 W to the Ta film, the plasmaized CF ₄ gas is converted to the T
It was designed to be guided on the a film.

Next, the resist film is dissolved and removed with acetone, the thin film pattern width is 0.06 μm, the thin film pattern interval is 0.18 μm, and the thin film pattern width is 0.06 μm.
m, a thin film pattern made of Ta was obtained in a repeating shape with a thin film pattern spacing of 0.06 μm. In addition, in this example, evaluation was performed on the thin film pattern before the etching treatment on one part and the other part of the thin film pattern. As is clear from the above description, the opened thin film pattern shown in FIG. 5 is formed by removing one part and the other part of the thin film pattern shown in FIG. 4, and the width and interval between the two should change. There is no.

Example 2 In this example, a thin film pattern was manufactured according to the manufacturing method according to the second embodiment of the present invention. A silicon substrate was used as a substrate, and an alumina (Al ₂ O ₃ ) film was formed on the silicon substrate to a thickness of 0.5 μm by the RF diode sputtering method. In addition, the sputtering is performed using argon gas for 140 s.
It is introduced at a flow rate of ccm and the pressure is 20 mTorr.
It was carried out by setting r and applying power of 13.5 kW to the alumina target.

Then, a BARC was formed on the alumina film.
After applying (Bottom side Anti-reflective Coating: bottom anti-reflection layer) to a thickness of 80 nm, prebaking treatment was performed at 180 ° C. for 60 seconds. After that, a resist film having a thickness of 0.5 μm is applied on the BARC, and then 130
A pre-baking treatment was performed at 60 ° C. for 60 seconds, and then the same exposure and development treatment as in Example 1 was performed to obtain a width of 0.
A resist film having a thickness of 18 μm and a spacing of 0.18 μm was prepared.

Then, using the resist film as a mask,
Directional dry etching was performed on the alumina film to divide the alumina film to form a pattern support member. In the directional dry etching, argon gas and oxygen gas are introduced into the etching apparatus at a flow rate of 100 sccm, the pressure is set to 10 mTorr, and a microwave of 400 W is introduced to plasma the argon gas and the oxygen gas. Turned into Then, by applying RF 20 W to the alumina film, the argon gas and the oxygen gas, which have been turned into plasma, are introduced onto the alumina film.

Then, while rotating the silicon substrate, a Ta film having a thickness of 0.06 μm was formed on the silicon substrate so as to cover the pattern supporting member. The Ta film was formed under the same conditions as in Example 1. Then, the Ta film was subjected to directional dry etching under the same conditions as in Example 1 to remove the portion of the Ta film attached on the pattern support member and the bottom portion between the pattern support members. Next, the resist film is dissolved and removed with acetone, the thin film pattern width is 0.06 μm, the thin film pattern interval is 0.18 μm, and the thin film pattern width is 0.0.
A pre-thin film pattern of Ta was obtained in a repeating shape of 6 μm and a thin film pattern interval of 0.06 μm.

Also in this example, the pre-thin film pattern was evaluated by omitting the etching treatment of the front and rear portions of the pre-thin film pattern and considering the pre-thin film pattern as a thin film pattern. As is clear from the above description, the thin film pattern is formed by removing the front part and the rear part of the pre-thin film pattern, and the width and the space between them do not change.

As is clear from Examples 1 and 2, the thin film pattern of the present invention can be formed with a narrow width and a narrow gap.

Although the present invention has been described with reference to the embodiments of the invention with reference to specific examples, the present invention is not limited to the above-mentioned contents and can be modified in any manner without departing from the scope of the present invention. It can be modified or changed.

[0084]

As described above, according to the manufacturing method of the present invention, the conventional method could not be obtained without depending on the kind of the resist film and the optical limit of the exposure device used in the exposure and development processing. A narrowed thin film pattern can be produced. Therefore, by performing a film forming process through such a thin film pattern, it is possible to easily form a narrowed thin film pattern. As a result, a microdevice such as a thin film magnetic head can be sufficiently miniaturized by using the thin film pattern thus manufactured.

[Brief description of drawings]

FIG. 1 is a diagram showing one step in a method for producing a first thin film pattern of the present invention.

FIG. 2 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 3 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 4 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 5 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 6 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 7 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 8 is a diagram showing one step in the method of manufacturing the second thin film pattern of the present invention.

FIG. 9 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 10 is a diagram showing a step subsequent to the step shown in FIG. 9.

FIG. 11 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 12 is a diagram showing a step subsequent to the step shown in FIG. 11.

FIG. 13 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 14 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 15 is a diagram showing a step in a third method for producing a thin film pattern of the present invention.

16 is a diagram showing a step subsequent to the step shown in FIG. 15. FIG.

FIG. 17 is a diagram showing a step subsequent to the step shown in FIG. 16.

FIG. 18 is a diagram showing a step subsequent to the step shown in FIG. 17.

FIG. 19 is a diagram showing a step that follows the step shown in FIG. 18.

20 is a diagram showing a step subsequent to the step shown in FIG. 19. FIG.

FIG. 21 is a diagram showing one step in a conventional method for producing a thin film pattern.

FIG. 22 is a diagram showing a step subsequent to the step shown in FIG. 21.

23 is a diagram showing a step subsequent to the step shown in FIG.

FIG. 24 is a diagram showing a step subsequent to the step shown in FIG. 23.

[Explanation of symbols]

11, 21 Substrate 12, 22, 32 Patterned film 13, 23 Resist film 14, 15, 16, 17, 24, 25, 35, 39 Thin film pattern 26A Insulating film 26, 36, 38 Pattern support member 37 Second resist Membrane (resist mask)

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H096 AA27 BA01 HA30                 5D033 DA07 DA08 DA31                 5F033 HH21 PP06 PP15 PP28 QQ08                       QQ13 QQ14 QQ16 QQ31 QQ41                       XX03                 5F046 AA28

Claims (14)

[Claims] 1. A step of selectively producing a resist film on a main surface of a predetermined substrate, the resist film having a side surface substantially parallel to the main surface and a side surface substantially perpendicular to the main surface; Forming a film to be patterned on the resist film; etching the film to be patterned formed on the film surface of the resist film to expose the film surface of the resist film; By etching away the patterned film formed on the main surface,
A step of exposing at least the main surface of the substrate located between the resist films; and a thin film formed by removing the resist film from the exposed film surface side of the resist film, and forming the remaining part of the patterned film. And a step of forming a pattern. 2. The method for producing a thin film pattern according to claim 1, further comprising the step of forming the thin film pattern in a closed shape, and removing at least a part of the thin film pattern to form an open thin film pattern. 3. The method for producing a thin film pattern according to claim 2, wherein an interval between open portions of the thin film pattern is expanded. 4. The thin film pattern fabrication according to claim 1, wherein the film to be patterned is formed by rotating the substrate including the resist film. Method. 5. A step of forming an insulating film on a main surface of a predetermined substrate, a step of selectively forming a resist film on the insulating film, and an etching treatment of the insulating film using the resist film as a mask. Exposing the main surface of the base to selectively form the insulating film, and forming a pattern support member having a side surface that is substantially parallel to the main surface and a side surface that is substantially perpendicular to the main surface; Forming a film to be patterned on the main surface and the pattern supporting member, and removing a portion of the film to be patterned existing on the film surface of the pattern supporting member by etching to remove the pattern supporting member. And exposing a portion of the film to be patterned, which is present on the main surface of the base body, by etching to remove the main portion located between at least the pattern supporting members of the base body. Exposing the said pattern supported by said side surface of the support member, the method for manufacturing a thin film pattern, which comprises a step of forming a thin film pattern comprising the balance of the film to be patterned. 6. The thin film pattern according to claim 5, wherein the thin film pattern is formed in a closed shape, and at least a part of the thin film pattern is removed to form an opened thin film pattern. Of manufacturing. 7. The method of manufacturing a thin film pattern according to claim 6, wherein an interval between open portions of the thin film pattern is expanded. 8. The thin film pattern according to claim 5, wherein the film to be patterned is formed by rotating the substrate including the pattern supporting member. Manufacturing method. 9. A step of forming an insulating film on a main surface of a predetermined substrate, a step of selectively forming a resist film on the insulating film, and an etching process of the insulating film using the resist film as a mask. And exposing the main surface of the substrate to selectively form the insulating film, and forming a pattern support member having a side surface substantially parallel to the main surface and a side surface substantially perpendicular to the main surface; A step of selectively forming a second resist film so as to include a part of a supporting member, and a film to be patterned is formed on the main surface of the base, the pattern supporting member, and the second resist film. And a step of removing the second resist film, and a portion of the film to be patterned existing on the film surface of the pattern support member is removed by etching to expose the pattern support member, A portion of the patterning film that is present on the main surface of the base is removed by etching to expose at least the main surface of the base, which is located between the pattern support members. And a step of forming a supported thin film pattern of the remaining portion of the film to be patterned which is at least partially opened. 10. The method for producing a thin film pattern according to claim 9, wherein an interval between open portions of the thin film pattern is expanded. 11. The method for producing a thin film pattern according to claim 9, wherein the film to be patterned is formed by rotating the substrate including the pattern supporting member while rotating. 12. The method for producing a thin film pattern according to claim 9, wherein the second resist film has a two-layer structure in which a lower layer portion is made of polymethylglutarimide. . 13. A method of manufacturing a microdevice, which comprises manufacturing a microdevice by using the thin film patterning method according to claim 1. 14. The method of manufacturing a microdevice according to claim 13, wherein the microdevice is a thin film magnetic head.