JP2003068466A - Light-emitting element and manufacturing method of light-emitting element - Google Patents
Light-emitting element and manufacturing method of light-emitting elementInfo
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- JP2003068466A JP2003068466A JP2002143442A JP2002143442A JP2003068466A JP 2003068466 A JP2003068466 A JP 2003068466A JP 2002143442 A JP2002143442 A JP 2002143442A JP 2002143442 A JP2002143442 A JP 2002143442A JP 2003068466 A JP2003068466 A JP 2003068466A
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- Prior art keywords
- light emitting
- light
- compound
- organic
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 68
- 150000001875 compounds Chemical class 0.000 claims abstract description 37
- 239000002019 doping agent Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 72
- 239000000126 substance Substances 0.000 description 16
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000012044 organic layer Substances 0.000 description 9
- 229940126214 compound 3 Drugs 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 229940052810 complex b Drugs 0.000 description 6
- 238000009835 boiling Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229940126062 Compound A Drugs 0.000 description 3
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical group [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- -1 aluminum quinolinol Chemical compound 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- UDQLIWBWHVOIIF-UHFFFAOYSA-N 3-phenylbenzene-1,2-diamine Chemical class NC1=CC=CC(C=2C=CC=CC=2)=C1N UDQLIWBWHVOIIF-UHFFFAOYSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RTRAMYYYHJZWQK-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1 RTRAMYYYHJZWQK-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機化合物を用い
た発光素子に関するものであり、さらに詳しくは複数の
化合物を発光層内にドープすることによる、輝度・効率
・駆動耐久性の高い有機エレクトロルミネッセンス素子
（以下、「有機ＥＬ素子」という）に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using an organic compound, and more specifically to an organic electroluminescent device having high brightness, efficiency and driving durability by doping a plurality of compounds in a light emitting layer. The present invention relates to a luminescence element (hereinafter referred to as "organic EL element").
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、高速応答性や高効率の
発光素子として、応用研究が精力的に行われている。そ
の基本的な構成を図１（ａ）・（ｂ）に示した［例えば
Ｍａｃｒｏｍｏｌ．Ｓｙｍｐ．１２５，１〜４８（１９
９７）参照］。2. Description of the Related Art Organic EL devices have been vigorously studied for application as light-emitting devices with high-speed response and high efficiency. The basic structure thereof is shown in FIGS. 1 (a) and 1 (b) [eg Macromol. Symp. 125, 1-48 (19
97)].
【０００３】図１に示したように、一般に有機ＥＬ素子
は透明基板１５上に透明電極１４と金属電極１１の間に
複数層の有機膜層から構成される。As shown in FIG. 1, an organic EL element is generally composed of a plurality of organic film layers on a transparent substrate 15 between a transparent electrode 14 and a metal electrode 11.
【０００４】図１（ａ）では、有機層が発光層１２とホ
ール輸送層１３からなる。透明電極１４としては、仕事
関数が大きなＩＴＯなどが用いられ、透明電極１４から
ホール輸送層１３への良好なホール注入特性を持たせて
いる。金属電極１１としては、アルミニウム、マグネシ
ウムあるいはそれらを用いた合金などの仕事関数の小さ
な金属材料を用い有機層への良好な電子注入性を持たせ
る。これら電極には、５０〜２００ｎｍの膜厚が用いら
れる。In FIG. 1A, the organic layer comprises a light emitting layer 12 and a hole transport layer 13. ITO or the like having a large work function is used as the transparent electrode 14, and has good hole injection characteristics from the transparent electrode 14 to the hole transport layer 13. As the metal electrode 11, a metal material having a small work function, such as aluminum, magnesium, or an alloy using them, is used to have good electron injecting property to the organic layer. A film thickness of 50 to 200 nm is used for these electrodes.
【０００５】発光層１２には、電子輸送性と発光特性を
有するアルミキノリノール錯体など（代表例は、化１に
示すＡｌｑ３）が用いられる。また、ホール輸送層１３
には、例えばビフェニルジアミン誘導体（代表例は、化
１に示すα−ＮＰＤ）など電子供与性を有する材料が用
いられる。For the light emitting layer 12, an aluminum quinolinol complex having an electron transporting property and a light emitting property (a typical example is Alq3 shown in Chemical formula 1) is used. In addition, the hole transport layer 13
For example, a material having an electron donating property such as a biphenyldiamine derivative (a typical example is α-NPD shown in Chemical formula 1) is used.
【０００６】以上の構成をした素子は整流性を示し、金
属電極１１を陰極に透明電極１４を陽極になるように電
界を印加すると、金属電極１１から電子が発光層１２に
注入され、透明電極１５からはホールが注入される。The element having the above-described structure exhibits rectifying properties, and when an electric field is applied so that the metal electrode 11 serves as a cathode and the transparent electrode 14 serves as an anode, electrons are injected from the metal electrode 11 into the light emitting layer 12, and the transparent electrode Holes are injected from 15.
【０００７】注入されたホールと電子は発光層１２内で
再結合により励起子が生じ発光する。この時ホール輸送
層１３は電子のブロッキング層の役割を果たし、発光層
１２／ホール輸送層１３界面の再結合効率が上がり、発
光効率が上がる。The injected holes and electrons recombine in the light emitting layer 12 to generate excitons and emit light. At this time, the hole transport layer 13 plays a role of an electron blocking layer, the recombination efficiency of the interface of the light emitting layer 12 / the hole transport layer 13 is increased, and the light emitting efficiency is increased.
【０００８】さらに、図１（ｂ）では、図１（ａ）の金
属電極１１と発光層１２の間に、電子輸送層１６が設け
られている。発光と電子・ホール輸送を分離して、より
効果的なキャリアブロッキング構成にすることで、効率
的な発光を行うことができる。電子輸送層１６として
は、例えば、オキサジアゾール誘導体などを用いること
ができる。Further, in FIG. 1B, an electron transport layer 16 is provided between the metal electrode 11 and the light emitting layer 12 of FIG. 1A. Efficient light emission can be achieved by separating light emission from electron / hole transport to form a more effective carrier blocking structure. As the electron transport layer 16, for example, an oxadiazole derivative or the like can be used.
【０００９】これまで、一般に有機ＥＬ素子に用いられ
ている発光は、発光中心の分子の一重項励起子から基底
状態になるときの蛍光が取り出されている。一方、一重
項励起子を経由した蛍光発光を利用するのでなく、三重
項励起子を経由したりん光発光を利用する素子の検討が
なされている。発表されている代表的な文献は、文献
１：Ｉｍｐｒｏｖｅｄ ｅｎｅｒｇｙ ｔｒａｎｓｆｅ
ｒ ｉｎ ｅｌｅｃｔｒｏｐｈｏｓｐｈｏｒｅｓｃｅｎ
ｔ ｄｅｖｉｃｅ（Ｄ．Ｆ．Ｏ’Ｂｒｉｅｎら、Ａｐｐ
ｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ
７４，Ｎｏ３ ｐ４２２（１９９９））、文献２：Ｖｅ
ｒｙ ｈｉｇｈ−ｅｆｆｉｃｉｅｎｃｙｇｒｅｅｎ ｏ
ｒｇａｎｉｃ ｌｉｇｈｔ−ｅｍｉｔｔｉｎｇ ｄｅｖ
ｉｃｅｓｂａｓｄ ｏｎ ｅｌｅｃｔｒｏｐｈｏｓｐｈ
ｏｒｅｓｃｅｎｃｅ（Ｍ．Ａ．Ｂａｌｄｏら、Ａｐｐｌ
ｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ Ｖｏｌ ７
５，Ｎｏ１ ｐ４（１９９９））である。Up to now, in the light emission generally used in the organic EL device, the fluorescence at the time of reaching the ground state is extracted from the singlet excitons of the molecule at the emission center. On the other hand, devices that utilize phosphorescence emission via triplet excitons, rather than fluorescence emission via singlet excitons, have been studied. A representative document that has been published is Document 1: Improved energy transfer.
r in electrophosphorescence
t device (DFO'Brien et al., App
Lied Physics Letters Vol
74, No3 p422 (1999)), Reference 2: Ve
ry high-efficiency green o
organic light-emitting dev
icesbasd on electrophosph
orence (MA Baldo et al., Appl.
ied Physics Letters Vol 7
5, No1 p4 (1999)).
【００１０】これらの文献では、図１（ｃ）に示す有機
層の４層構成が主に用いられている。それは、陽極側か
らホール輸送層１３、発光層１２、励起子拡散防止層１
７、電子輸送層１６からなる。用いられている材料は、
化１に示すキャリア輸送材料とりん光発光性材料であ
る。各材料の略称は以下の通りである。
Ａｌｑ３：アルミ−キノリノール錯体
α−ＮＰＤ：Ｎ４，Ｎ４’−Ｄｉ−ｎａｐｈｔｈａｌｅ
ｎ−１−ｙｌ−Ｎ４，Ｎ４’−ｄｉｐｈｅｎｙｌ−ｂｉ
ｐｈｅｎｙｌ−４，４’−ｄｉａｍｉｎｅ
ＣＢＰ：４，４’−Ｎ，Ｎ’−ｄｉｃａｒｂａｚｏｌｅ
−ｂｉｐｈｅｎｙｌ
ＢＣＰ：２，９−ｄｉｍｅｔｈｙｌ−４，７−ｄｉｐｈ
ｅｎｙｌ−１，１０−ｐｈｅｎａｎｔｈｒｏｌｉｎｅ
ＰｔＯＥＰ：白金−オクタエチルポルフィリン錯体
Ｉｒ（ｐｐｙ）3：イリジウム−フェニルピリジン錯体In these documents, the four-layer structure of the organic layer shown in FIG. 1 (c) is mainly used. It is a hole transport layer 13, a light emitting layer 12, an exciton diffusion prevention layer 1 from the anode side.
7 and the electron transport layer 16. The materials used are
The carrier transport material and the phosphorescent material shown in Chemical formula 1. Abbreviations of each material are as follows. Alq3: Aluminum-quinolinol complex α-NPD: N4, N4′-Di-naphthalle
n-1-yl-N4, N4′-diphenyl-bi
phenyl-4,4'-diamine CBP: 4,4'-N, N'-dicarbazole
-Biphenyl BCP: 2,9-dimethyl-4,7-diph
enyl-1,10-phenanthroline PtOEP: platinum-octaethylporphyrin complex Ir (ppy) 3 : iridium-phenylpyridine complex
【００１１】[0011]
【化１】 [Chemical 1]
【００１２】さらに、Ｎａｔｕｒｅ ４０３ Ｐａｇｅ
７５０ Ｆｏｒｒｅｓｔ ｅｔａｌには積層構造のＥ
Ｌ素子に於いて発光層のホスト材料としてＣＢＰを用い
てＩｒ（ｐｐｙ）3の緑発光材料層からＤＣＭの赤色発
光層に三重項、一重項間のエネルギー転移をさせる方式
が示されている。Further, Nature 403 Page
750 Forrest et al has a laminated structure E
In the L element, there is disclosed a method in which CBP is used as a host material of the light emitting layer to transfer energy between triplet and singlet from the green light emitting material layer of Ir (ppy) 3 to the red light emitting layer of DCM.
【００１３】これらと、本発明との差異は発光層中に混
合する化合物が発光性のものだけで、非発光性のもの
（ここで用いる非発光性化合物の定義は発光性の化合物
に比べて発光性が著しく劣る物で、単独でＥＬ発光せ
ず、ＥＬ素子の発光に寄与しない物である）が含まれな
い点、混合物の蒸着処理ではない点などであり詳細は実
施例等で詳述する。The difference between these and the present invention is that the compound mixed in the light-emitting layer is only a light-emitting compound, and a non-light-emitting compound (the definition of the non-light-emitting compound used here is more than that of a light-emitting compound). The light emitting property is remarkably inferior and does not emit EL alone and does not contribute to the light emission of the EL element), and it is not a vapor deposition treatment of the mixture. To do.
【００１４】[0014]
【発明が解決しようとする課題】上記、燐光発光を用い
た有機ＥＬ素子では、低電圧で電子・正孔のバランスを
保ちながら、低い電圧でより多くのキャリアを発光層に
注入することが必要であるが、多くの課題を抱えてお
り、初期特性の高輝度化・高効率化に重要な問題となっ
ていた。In the above-mentioned organic EL device using phosphorescence, it is necessary to inject more carriers into the light emitting layer at a low voltage while maintaining the balance of electrons and holes at a low voltage. However, it has many problems, and it has become an important issue for improving the brightness and efficiency of the initial characteristics.
【００１５】また、上記りん光材料の中には電荷注入性
・輸送性が低く、低電圧で多くの電流を流すことが困難
なものもあった。Further, some of the above phosphorescent materials have a low charge injection property / transport property, and it is difficult to flow a large amount of current at a low voltage.
【００１６】一方、有機ＥＬ素子にあっては、発光輝度
を上げるために電流を多く流すと、発光輝度が低下する
速度が増し、寿命が短くなる問題を抱えていた。よって
前記初期特性の向上ばかりではなく、素子の寿命を延ば
すことも重要な課題である。On the other hand, in the organic EL element, when a large amount of current is passed in order to increase the light emission brightness, there is a problem in that the speed at which the light emission brightness is reduced is increased and the life is shortened. Therefore, it is an important issue not only to improve the initial characteristics but also to prolong the life of the device.
【００１７】また、一般に多くの有機材料は蒸発時に複
数分子の集合体（クラスター）として蒸発することが知
られており、このようなクラスターは発光効率を下げる
原因となると考えられている。Further, it is generally known that many organic materials evaporate as an aggregate (cluster) of a plurality of molecules at the time of evaporation, and it is considered that such a cluster causes a decrease in luminous efficiency.
【００１８】さらに、有機材料はたとえば、発光層中で
同種分子同士の結晶化等により特性の劣化が起こること
が推定されていた。Further, it has been estimated that, for example, the characteristics of the organic material deteriorate in the light emitting layer due to crystallization of molecules of the same kind.
【００１９】[0019]
【課題を解決するための手段】本発明は、有機発光材料
を用いた有機ＥＬ素子においても、低電圧駆動を可能に
し、高輝度化・高効率化・高耐久性を可能にする発光素
子及び表示装置を提供することを目的とする。The present invention provides a light-emitting element that enables low voltage driving, high brightness, high efficiency, and high durability even in an organic EL element using an organic light emitting material. An object is to provide a display device.
【００２０】即ち、本発明の発光素子は、基板上に形成
された陽極および陰極と、該陽極および陰極間に配置さ
れた有機発光層を有する発光素子であって、前記有機発
光層がホスト材料と該ホスト材料に混入されるドーパン
トから構成され、該ドーパントが発光材料と非発光性化
合物からなることを特徴とする。That is, the light emitting device of the present invention is a light emitting device having an anode and a cathode formed on a substrate and an organic light emitting layer disposed between the anode and the cathode, wherein the organic light emitting layer is a host material. And a dopant mixed in the host material, and the dopant is composed of a light emitting material and a non-light emitting compound.
【００２１】本発明の発光素子においては、前記非発光
性化合物が前記発光材料より低沸点をもつ化合物である
場合が含まれる。The light emitting device of the present invention includes the case where the non-light emitting compound is a compound having a lower boiling point than the light emitting material.
【００２２】また、前記非発光性化合物のバンドギャッ
プが前記発光材料のバンドギャップよりも広いことが好
ましい。The band gap of the non-light emitting compound is preferably wider than the band gap of the light emitting material.
【００２３】また、前記ドーパント中の発光材料と非発
光性化合物の割合を、有機発光層内の場所により変化さ
せたことが好ましい。Further, it is preferable that the ratio of the light emitting material to the non-light emitting compound in the dopant is changed depending on the location in the organic light emitting layer.
【００２４】また、前記非発光性化合物がフッ素原子を
含有することが好ましい。The non-light emitting compound preferably contains a fluorine atom.
【００２５】また、前記発光材料が燐光発光材料である
ことが発光効率の上で好ましい。Further, it is preferable in terms of luminous efficiency that the light emitting material is a phosphorescent light emitting material.
【００２６】本発明の発光素子の製造方法は、基板上に
形成された陽極および陰極と、該陽極および陰極間に配
置された有機発光層を有する発光素子の製造方法であっ
て、発光層の形成方法が、発光材料と少なくとも１種類
の非発光性化合物を混合し、該混合物を加熱して真空蒸
着することを特徴とし、前記発光材料と非発光性化合物
の少なくとも１つがフッ素原子を含有することが好まし
い。The method for producing a light emitting device of the present invention is a method for producing a light emitting device having an anode and a cathode formed on a substrate, and an organic light emitting layer arranged between the anode and the cathode. The formation method is characterized in that a luminescent material and at least one non-emissive compound are mixed, the mixture is heated and vacuum-deposited, and at least one of the luminescent material and the non-emissive compound contains a fluorine atom. It is preferable.
【００２７】[0027]
【発明の実施の形態】本発明の発光素子は、陽極および
陰極と、陽極および陰極間に挟持された有機発光層を有
する発光素子である。発光素子の層構成としては特に限
定されず、図１に示す様な構成が挙げられる。BEST MODE FOR CARRYING OUT THE INVENTION The light emitting device of the present invention is a light emitting device having an anode and a cathode and an organic light emitting layer sandwiched between the anode and the cathode. The layer structure of the light emitting element is not particularly limited and may be the structure as shown in FIG.
【００２８】本発明の発光素子は、有機発光層がホスト
材料とホスト材料に混入されるドーパントから構成さ
れ、該ドーパントが発光材料と非発光性化合物からなる
ことを特徴とする。The light emitting device of the present invention is characterized in that the organic light emitting layer is composed of a host material and a dopant mixed in the host material, and the dopant is composed of a light emitting material and a non-light emitting compound.
【００２９】非発光性化合物の役割は、以下の通りであ
る。The role of the non-emissive compound is as follows.
【００３０】（１）キャリアの注入やキャリアの移動が
おこりにくい発光層、例えば、燐光発光材料を用いた発
光層においても、電流を増加させ、駆動電圧の低下・高
効率化を図ることができる。
（２）発光層中での発光材料の結晶化を抑制する。
（３）発光材料と共に蒸着することで蒸着温度を下げ
る。
（４）さらには発光層中の発光部位を変化させることに
より、輝度増加等の改善効果がもたらされる。(1) Even in a light emitting layer in which carrier injection or carrier movement does not easily occur, for example, a light emitting layer using a phosphorescent light emitting material, it is possible to increase the current to reduce the driving voltage and increase the efficiency. . (2) Suppressing crystallization of the light emitting material in the light emitting layer. (3) The vapor deposition temperature is lowered by vapor deposition together with the light emitting material. (4) Further, by changing the light emitting site in the light emitting layer, an improvement effect such as increase in brightness is brought about.
【００３１】本発明における非発光性化合物としては、
ここで用いる発光性の化合物に比べて発光性が著しく劣
る物で、単独でＥＬ発光せず、ＥＬ素子の発光に寄与し
ない物である。As the non-luminous compound in the present invention,
It is a substance that is significantly inferior in light emitting property to the light emitting compound used here, does not emit EL light by itself, and does not contribute to light emission of an EL device.
【００３２】非発光性化合物の第１の機能としては、発
光層中の発光材料の存在を安定化させる働きを有する。
このとき他の材料は発光材料と異なる分子構造をもち、
基底状態での結晶化もしくは二量体化、励起時の会合体
形成を阻害する物が望ましい。The first function of the non-light emitting compound is to stabilize the presence of the light emitting material in the light emitting layer.
At this time, the other materials have a different molecular structure from the light emitting material,
A substance that inhibits crystallization or dimerization in the ground state and formation of an aggregate during excitation is desirable.
【００３３】非発光性化合物の第２の機能としては、発
光層中の発光材料の分散を助長する機能が考えられる。
異種分子を混入することで、発光層中の発光材料の結晶
化等の膜質変化を抑制する機能である。The second function of the non-light emitting compound is considered to be a function of promoting dispersion of the light emitting material in the light emitting layer.
By mixing different kinds of molecules, it has a function of suppressing the film quality change such as crystallization of the light emitting material in the light emitting layer.
【００３４】非発光性化合物の第３の機能として例え
ば、蒸着時の分子流の制御が考えられる。蒸発温度の異
なる複数の材料を混合して加熱蒸着することで、発光材
料の蒸発温度を低下でき、またクラスター形成を抑制す
ることが考えられる。As the third function of the non-emissive compound, for example, control of molecular flow during vapor deposition can be considered. It is conceivable that the evaporation temperature of the light emitting material can be lowered and cluster formation can be suppressed by mixing a plurality of materials having different evaporation temperatures and performing heat evaporation.
【００３５】このためには例えば、フッ素化された有機
化合物を発光材料と同時に蒸着することが考えられる。For this purpose, for example, vapor deposition of a fluorinated organic compound at the same time as the light emitting material can be considered.
【００３６】また、非発光性化合物のバンドギャップ
を、発光材料のバンドギャップよりも大きくすることに
より、正孔と電子が発光材料上で再結合を起こしやすく
なり、主として発光効率を上げることができる。Further, by making the band gap of the non-emissive compound larger than the band gap of the light emitting material, holes and electrons are likely to recombine on the light emitting material, and mainly the luminous efficiency can be improved. .
【００３７】本発明においては、ドーパント濃度、また
はドーパント中の発光材料と非発光性化合物の割合を、
有機発光層内の場所により変化させることにより、発光
層内の電子および正孔の分布をコントロールすることが
でき、発光層内の電子−正孔の再結合位置を調整するこ
とが容易になり、結果として発光色のよい、高効率の素
子を作成することができる。In the present invention, the dopant concentration or the ratio of the light emitting material to the non-light emitting compound in the dopant is
By changing the position in the organic light emitting layer, it is possible to control the distribution of electrons and holes in the light emitting layer, it becomes easy to adjust the electron-hole recombination position in the light emitting layer, As a result, it is possible to produce a highly efficient device that emits light in a good color.
【００３８】発光層に用いるホスト材料としては、例え
ばＣＢＰ、ＴＡＺ等、非発光性化合物としては、例えば
化合物Ａ、ＣＢＰ、Ｉｒ錯体Ａ等がある。発光材料とし
ては、例えばＩｒ錯体Ｂ，Ｉｒ（ｐｐｙ）、Ｉｒ錯体Ｃ
等を用いることができる。Examples of the host material used for the light emitting layer include CBP and TAZ, and examples of the non-emissive compound include compound A, CBP, and Ir complex A. Examples of the light emitting material include Ir complex B, Ir (ppy), Ir complex C
Etc. can be used.
【００３９】化１に示したもの以外の構造は、以下の通
りである。Structures other than those shown in Chemical formula 1 are as follows.
【００４０】[0040]
【化２】 [Chemical 2]
【００４１】本発明の高効率な発光素子は、省エネルギ
ーや高輝度が必要な製品に応用が可能である。応用例と
しては表示装置・照明装置やプリンターの光源、液晶表
示装置のバックライトなどが考えられる。表示装置とし
ては、省エネルギーや高視認性・軽量なフラットパネル
ディスプレイが可能となる。また、プリンターの光源と
しては、現在広く用いられているレーザビームプリンタ
のレーザー光源部を、本発明の発光素子に置き換えるこ
とができる。独立にアドレスできる素子をアレイ上に配
置し、感光ドラムに所望の露光を行うことで、画像形成
する。本発明の素子を用いることで、装置体積を大幅に
減少することができる。照明装置やバックライトに関し
ては、本発明による省エネルギー効果が期待できる。The highly efficient light emitting device of the present invention can be applied to products requiring energy saving and high brightness. Application examples include a display device / illumination device, a light source for a printer, and a backlight for a liquid crystal display device. As a display device, energy saving, high visibility and lightweight flat panel display can be realized. Further, as the light source of the printer, the laser light source portion of the laser beam printer which is widely used at present can be replaced with the light emitting element of the present invention. An image is formed by arranging independently addressable elements on the array and exposing the photosensitive drum to a desired exposure. By using the element of the present invention, the device volume can be significantly reduced. Regarding the lighting device and the backlight, the energy saving effect of the present invention can be expected.
【００４２】[0042]
【実施例】実施例１、実施例２に用いた素子作成工程の
共通部分を説明する。EXAMPLE A common part of the element manufacturing process used in Examples 1 and 2 will be described.
【００４３】本実施例１、実施例２では、素子構成とし
て、図１（ｃ）に示す有機層が４層の素子を使用した。
ガラス基板（透明基板１５）上に厚み１００ｎｍのＩＴ
Ｏ（透明電極１４）をパターニングした。そのＩＴＯ基
板上に、以下の有機層と電極層を１０-4Ｐａの真空チャ
ンバー内で抵抗加熱による真空蒸着し、連続製膜した。
ホール輸送層１３（４０ｎｍ）：α−ＮＰＤ
発光層１２（４０ｎｍ）：ホスト材料＋非発光性化合物
＋発光材料
励起子拡散防止層１７（１０ｎｍ）ＢＣＰ
電子輸送層１６（３０ｎｍ）：Ａｌｑ３
金属電極層１（１５ｎｍ）：ＡｌＬｉ合金（Ｌｉ含有量
１．８重量％）
金属電極層２（１００ｎｍ）：Ａｌ
対向する電極面積が３ｍｍ2になるようにパターニング
した。In the present Example 1 and Example 2, as the element structure, the element having four organic layers shown in FIG. 1C was used.
100 nm thick IT on glass substrate (transparent substrate 15)
The O (transparent electrode 14) was patterned. On the ITO substrate, the following organic layers and electrode layers were vacuum deposited by resistance heating in a vacuum chamber of 10 −4 Pa to continuously form a film. Hole transport layer 13 (40 nm): α-NPD Light emitting layer 12 (40 nm): Host material + non-light emitting compound + Light emitting material Exciton diffusion prevention layer 17 (10 nm) BCP Electron transport layer 16 (30 nm): Alq3 Metal electrode layer 1 (15 nm): AlLi alloy (Li content 1.8% by weight) Metal electrode layer 2 (100 nm): Al Patterning was performed so that the facing electrode area was 3 mm 2 .
【００４４】＜実施例１＞発光層のホストとしてＣＢＰ
を用い、非発光性化合物として化合物Ａを３重量％、発
光材料としてＩｒ錯体Ｂを７重量％の濃度で発光層にド
ープして素子を作製した。Example 1 CBP as a host of the light emitting layer
Was used to dope the light emitting layer with 3% by weight of the compound A as the non-emissive compound and 7% by weight of the Ir complex B as the light emitting material to fabricate a device.
【００４５】（比較例１）化合物Ａをドープしない以外
は、実施例１と同様にして、素子を作製した。Comparative Example 1 A device was manufactured in the same manner as in Example 1 except that the compound A was not doped.
【００４６】これらの素子に１０Ｖの直流電圧を印加し
て、そのときの電流及び輝度を測定した結果を表１に示
す。Table 1 shows the results obtained by applying a DC voltage of 10 V to these devices and measuring the current and luminance at that time.
【００４７】[0047]
【表１】 [Table 1]
【００４８】表１から、比較例１に比べて、実施例１の
素子は電流・輝度が共に上昇し、非発光性化合物の添加
効果が確認された。また、実施例１と比較例１の発光ス
ペクトルはほぼ同じで、Ｉｒ錯体Ｂからの発光のみが観
測された。From Table 1, as compared with Comparative Example 1, the current and luminance of the device of Example 1 both increased, and the effect of adding the non-emissive compound was confirmed. The emission spectra of Example 1 and Comparative Example 1 were almost the same, and only the emission from Ir complex B was observed.
【００４９】＜実施例２＞発光層のホストとしてＴＡＺ
を用い、非発光性化合物としてＣＢＰを１０重量％、発
光材料としてＩｒ錯体Ｂを７重量％の濃度で発光層にド
ープして素子を作製した。Example 2 TAZ as the host of the light emitting layer
Was used to dope the light emitting layer with CBP as a non-emissive compound at a concentration of 10% by weight and Ir complex B as a light emitting material at a concentration of 7% by weight to fabricate a device.
【００５０】（比較例２）ＣＢＰをドープしない以外
は、実施例２と同様にして、素子を作製した。(Comparative Example 2) A device was prepared in the same manner as in Example 2 except that CBP was not doped.
【００５１】これらの素子に１０Ｖの直流電圧を印加し
て、そのときの電流及び輝度を測定した結果を表２に示
す。Table 2 shows the results obtained by applying a DC voltage of 10 V to these devices and measuring the current and luminance at that time.
【００５２】[0052]
【表２】 [Table 2]
【００５３】表２から、比較例２に比べて、実施例２の
素子は電流・輝度が共に上昇し、非発光性化合物の添加
効果が確認された。また、実施例２と比較例２の発光ス
ペクトルはほぼ同じで、Ｉｒ錯体Ｂからの発光のみが観
測された。From Table 2, as compared with Comparative Example 2, the current and luminance of the device of Example 2 both increased, and the effect of adding the non-emissive compound was confirmed. In addition, the emission spectra of Example 2 and Comparative Example 2 were almost the same, and only the emission from Ir complex B was observed.
【００５４】ここでＣＢＰのバンドギャップは２．５〜
３．０エレクトロンボルトでＩｒ錯体Ｂの２エレクトロ
ンボルトより大きい。Here, the band gap of CBP is 2.5 to
At 3.0 eV, it is larger than 2 eV of Ir complex B.
【００５５】＜実施例３＞本実施例では、素子構成とし
て、図１（ｃ）に示す有機層が４層の素子を使用した。
ガラス基板（透明基板１５）上に厚み１００ｎｍのＩＴ
Ｏ（透明電極１４）をパターニングした。そのＩＴＯ基
板上に、以下の有機層と電極層を１０-4Ｐａの真空チャ
ンバー内で抵抗加熱による真空蒸着し、連続製膜した。
ホール輸送層１３（４０ｎｍ）：ＦＬ０３（次構造式）Example 3 In this example, as the element structure, the element having four organic layers shown in FIG. 1C was used.
100 nm thick IT on glass substrate (transparent substrate 15)
The O (transparent electrode 14) was patterned. On the ITO substrate, the following organic layers and electrode layers were vacuum deposited by resistance heating in a vacuum chamber of 10 −4 Pa to continuously form a film.
Hole transport layer 13 (40 nm): FL03 (next structural formula)
【００５６】[0056]
【化３】 [Chemical 3]
【００５７】発光層１２（４０ｎｍ）：ホスト材料＋低
沸点材料＋発光材料
電子輸送層１７（５０ｎｍ）Ｂｐｈｅｎ（次構造式）Light emitting layer 12 (40 nm): host material + low boiling point material + light emitting material electron transport layer 17 (50 nm) Bphen (next structural formula)
【００５８】[0058]
【化４】 [Chemical 4]
【００５９】電子輸注入層１６（１ｎｍ）：ＫＦ
金属電極層（１００ｎｍ）：Ａｌ
対向する電極面積が３ｍｍ2になるようにパターニング
した。Electron injection layer 16 (1 nm): KF metal electrode layer (100 nm): Al Patterning was performed so that the facing electrode area was 3 mm 2 .
【００６０】本実施例においては、発光材料としてフェ
ニルイソキノリンを配位子としたＩｒ錯体Ｃを、低沸点
材料として化合物３（次構造式）を用いた。In this example, Ir complex C having phenylisoquinoline as a ligand was used as a light emitting material, and Compound 3 (the following structural formula) was used as a low boiling point material.
【００６１】[0061]
【化５】 [Chemical 5]
【００６２】Ｉｒ錯体Ｃおよび化合物３を等量秤量し、
メノウ乳鉢で結晶形を小さくしながら撹拌、混合して混
合物粉体を作成した。この混合物粉体を蒸着用ボートに
投入して別な蒸着ボートにホスト材料としてＣＢＰを準
備し、共蒸着を行った。上記のＩｒ錯体Ｃおよび化合物
３の混合物は重量比２０％になるようにホスト材料と共
蒸着した。Equal amounts of Ir complex C and compound 3 were weighed,
A mixture powder was prepared by stirring and mixing while reducing the crystal form in an agate mortar. This mixture powder was put into a vapor deposition boat, CBP was prepared as a host material in another vapor deposition boat, and co-evaporation was performed. The above mixture of Ir complex C and compound 3 was co-evaporated with the host material in a weight ratio of 20%.
【００６３】本実施例の混合物の蒸着時の加熱容器に流
れる電流を調べると次表の様になり、蒸発温度を大幅に
下げることができた。このことは素子作成時の熱的なダ
メージを軽減することができ、安定した素子の作成が可
能になった。When the current flowing through the heating container during vapor deposition of the mixture of this example was examined, the results are shown in the following table, and the evaporation temperature could be significantly lowered. This can reduce the thermal damage at the time of manufacturing the device, and enables stable device manufacturing.
【００６４】[0064]
【表３】 [Table 3]
【００６５】本実施例に用いたイリジウム錯体および化
合物３のＨＯＭＯ準位およびＬＵＭＯ準位を調べると次
表の様になっており、Ｉｒ錯体ＣのＨＯＭＯ準位は−
５．１３ｅＶであり、化合物３のＨＯＭＯ準位−５．３
８ｅＶよりより高い。一方Ｉｒ錯体ＣのＬＵＭＯ準位は
−２．４７ｅＶであり、Ｉｒ錯体ＤのＬＵＭＯ準位−
１．９４ｅＶよりより低くなっている。When the HOMO level and LUMO level of the iridium complex and compound 3 used in this example are examined, the results are shown in the following table, and the HOMO level of Ir complex C is −
5.13 eV, HOMO level of compound 3 -5.3
Higher than 8 eV. On the other hand, the LUMO level of Ir complex C is −2.47 eV, and the LUMO level of Ir complex D is −
It is lower than 1.94 eV.
【００６６】[0066]
【表４】 [Table 4]
【００６７】ここでの電子準位の測定はサイクリックボ
ルタンメトリ法による酸化還元電位の測定と、光吸収に
よるバンドギャップ測定データを基に、別途測定したイ
リジウム錯体ＣのＨＯＭＯ測定の結果（測定器 ＡＣ−
１、理研機器社製）によるとの照合換算によって決定し
た。The measurement of the electron level here was carried out by the measurement of the redox potential by the cyclic voltammetry method and the result of the HOMO measurement of the iridium complex C which was separately measured based on the band gap measurement data by light absorption (measurement Vessel AC-
1, manufactured by Riken Kikai Co., Ltd.).
【００６８】＜実施例４＞本実施例では、素子構成とし
て、図１（ｂ）に示す有機層が３層の素子を使用した。
ガラス基板（透明基板１５）上に厚み１００ｎｍのＩＴ
Ｏ（透明電極１４）をパターニングした。そのＩＴＯ基
板上に、以下の有機層と電極層を１０-4Ｐａの真空チャ
ンバー内で抵抗加熱による真空蒸着し、連続製膜した。
ホール輸送層１３（４０ｎｍ）：ＦＬ０３（次構造式）<Embodiment 4> In this embodiment, as the device structure, the device shown in FIG. 1B having three organic layers was used.
100 nm thick IT on glass substrate (transparent substrate 15)
The O (transparent electrode 14) was patterned. On the ITO substrate, the following organic layers and electrode layers were vacuum deposited by resistance heating in a vacuum chamber of 10 −4 Pa to continuously form a film. Hole transport layer 13 (40 nm): FL03 (next structural formula)
【００６９】[0069]
【化６】 [Chemical 6]
【００７０】発光層１２（４０ｎｍ）：ホスト材料＋低
沸点材料＋発光材料
電子輸送層１７（５０ｎｍ）Ｂｐｈｅｎ（次構造式）Light emitting layer 12 (40 nm): host material + low boiling point material + light emitting material electron transport layer 17 (50 nm) Bphen (the following structural formula)
【００７１】[0071]
【化７】 [Chemical 7]
【００７２】金属電極層（１００ｎｍ）：Ａｌ
対向する電極面積が３ｍｍ2になるように、パターニン
グした。Metal electrode layer (100 nm): Al Patterning was performed so that the electrode area facing Al was 3 mm 2 .
【００７３】本実施例においては、発光材料として化合
物Ｃ（ＤＣＭ、次構造式）を用いる。In this example, the compound C (DCM, the following structural formula) is used as the light emitting material.
【００７４】[0074]
【化８】 [Chemical 8]
【００７５】発光材料としては次の構造式の化合物Ｄで
もよい。As the light emitting material, compound D having the following structural formula may be used.
【００７６】[0076]
【化９】 [Chemical 9]
【００７７】低沸点材料として化合物３（次構造式）を
用いる。Compound 3 (the following structural formula) is used as the low boiling point material.
【００７８】[0078]
【化１０】 [Chemical 10]
【００７９】化合物Ｃおよび化合物３を等量秤量し、メ
ノウ乳鉢で結晶形を小さくしながら撹拌、混合して混合
物粉体を作成する。この混合物粉体を蒸着用ボートに投
入して、ホスト材料であるＣＢＰと共蒸着を行う。上記
の化合物Ｃおよび化合物３の混合物は重量比７％になる
ように、発光層を共蒸着した。Equivalent amounts of the compound C and the compound 3 are weighed and mixed with stirring in an agate mortar while reducing the crystal form to prepare a powder mixture. This mixture powder is put into a boat for vapor deposition and co-evaporated with CBP which is a host material. The light emitting layer was co-evaporated so that the mixture of Compound C and Compound 3 described above had a weight ratio of 7%.
【００８０】[0080]
【発明の効果】以上説明したように、本発明によって、
素子に流れる電流量を増加させることができ、また低電
圧駆動を可能にし、輝度や発光効率を向上することが可
能になった。As described above, according to the present invention,
It is possible to increase the amount of current flowing through the device, enable low voltage driving, and improve luminance and light emission efficiency.
【図１】本発明の発光素子の一例を示す図である。FIG. 1 is a diagram showing an example of a light emitting device of the present invention.
１１ 金属電極 １２ 発光層 １３ ホール輸送層 １４ 透明電極 １５ 透明基板 １６ 電子輸送層 １７ 励起子拡散防止層 11 metal electrodes 12 Light-emitting layer 13 Hall transport layer 14 Transparent electrode 15 Transparent substrate 16 Electron transport layer 17 Exciton diffusion prevention layer
フロントページの続き (72)発明者 坪山 明 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 滝口 隆雄 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 三浦 聖志 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 森山 孝志 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 鎌谷 淳 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 岩脇 洋伸 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 井川 悟史 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 Ｆターム(参考） 3K007 AB02 AB03 AB06 AB11 DB03 FA01 Continued front page (72) Inventor Akira Tsuboyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Takao Takiguchi 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Seiji Miura 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Takashi Moriyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Jun Kamagai 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Hironobu Iwawaki 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Satoshi Ikawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation F-term (reference) 3K007 AB02 AB03 AB06 AB11 DB03 FA01
Claims (7)
該陽極および陰極間に配置された有機発光層を有する発
光素子であって、前記有機発光層がホスト材料と該ホス
ト材料に混入されるドーパントから構成され、該ドーパ
ントが発光材料と非発光性化合物からなることを特徴と
する発光素子。1. An anode and a cathode formed on a substrate,
A light emitting device having an organic light emitting layer disposed between the anode and the cathode, wherein the organic light emitting layer is composed of a host material and a dopant mixed in the host material, the dopant being a light emitting material and a non-light emitting compound. A light emitting device comprising:
前記発光材料のバンドギャップよりも広いことを特徴と
する請求項１に記載の発光素子。2. The light emitting device according to claim 1, wherein the band gap of the non-light emitting compound is wider than the band gap of the light emitting material.
化合物の割合を、有機発光層内の場所により変化させた
ことを特徴とする請求項１または２に記載の発光素子。3. The light emitting device according to claim 1, wherein the ratio of the light emitting material to the non-light emitting compound in the dopant is changed depending on the location in the organic light emitting layer.
することを特徴とする請求項１〜３のいずれかに記載の
発光素子。4. The light emitting device according to claim 1, wherein the non-emissive compound contains a fluorine atom.
を特徴とする請求項１〜４のいずれかに記載の発光素
子。5. The light emitting device according to claim 1, wherein the light emitting material is a phosphorescent light emitting material.
該陽極および陰極間に配置された有機発光層を有する発
光素子の製造方法であって、発光層の形成方法が、発光
材料と少なくとも１種類の非発光性化合物を混合し、該
混合物を加熱して真空蒸着することを特徴とする発光素
子の製造方法。6. An anode and a cathode formed on a substrate,
A method for producing a light emitting device having an organic light emitting layer disposed between the anode and the cathode, wherein the method for forming the light emitting layer comprises mixing a light emitting material and at least one non-light emitting compound, and heating the mixture. A method for manufacturing a light-emitting device, which comprises vacuum vapor deposition.
とも１つがフッ素原子を含有することを特徴とする請求
項６に記載の発光素子の製造方法。7. The method for manufacturing a light emitting device according to claim 6, wherein at least one of the light emitting material and the non-light emitting compound contains a fluorine atom.
Priority Applications (13)
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|---|---|---|---|
| JP2002143442A JP4006266B2 (en) | 2001-06-15 | 2002-05-17 | Light emitting device and method for manufacturing light emitting device |
| PCT/JP2002/005891 WO2002104080A1 (en) | 2001-06-15 | 2002-06-13 | Organic electroluminescnece device |
| CNB028118189A CN100428524C (en) | 2001-06-15 | 2002-06-13 | Organic electroluminescence device |
| CN2008102151886A CN101355141B (en) | 2001-06-15 | 2002-06-13 | Organic electroluminescent device |
| CN2010101667476A CN101916829B (en) | 2001-06-15 | 2002-06-13 | Organic electroluminescent device |
| EP02738680A EP1399002A4 (en) | 2001-06-15 | 2002-06-13 | Organic electroluminescnece device |
| US10/207,843 US6838818B2 (en) | 2001-06-15 | 2002-07-31 | Light emitting device having a dopant in a light emitting layer and method of producing the light emitting device |
| US10/943,868 US7166958B2 (en) | 2001-06-15 | 2004-09-20 | Light emitting device having dopant in a light emitting layer, and method of producing the light emitting device |
| US11/590,827 US7446471B2 (en) | 2001-06-15 | 2006-11-01 | OLED provided with organic layer comprising first and second dopants based on iridium organic complex compounds |
| US12/147,201 US7790299B2 (en) | 2001-06-15 | 2008-06-26 | Light emitting device having dopants in a light emitting layer |
| US12/147,181 US7736758B2 (en) | 2001-06-15 | 2008-06-26 | Light emitting device having dopants in a light emitting layer |
| US12/147,213 US7910227B2 (en) | 2001-06-15 | 2008-06-26 | Light emitting device having dopants in a light emitting layer |
| US12/973,166 US20110089821A1 (en) | 2001-06-15 | 2010-12-20 | Light emitting device having dopants in a light emitting layer |
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| JP2001181416 | 2001-06-15 | ||
| JP2001-181416 | 2001-06-15 | ||
| JP2002143442A JP4006266B2 (en) | 2001-06-15 | 2002-05-17 | Light emitting device and method for manufacturing light emitting device |
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