JP2001257076A - Organic el element - Google Patents

Organic el element

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Publication number
JP2001257076A
JP2001257076A JP2000068363A JP2000068363A JP2001257076A JP 2001257076 A JP2001257076 A JP 2001257076A JP 2000068363 A JP2000068363 A JP 2000068363A JP 2000068363 A JP2000068363 A JP 2000068363A JP 2001257076 A JP2001257076 A JP 2001257076A
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JP
Japan
Prior art keywords
organic
group
host material
light
carbon atoms
Prior art date
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Application number
JP2000068363A
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Japanese (ja)
Other versions
JP4890669B2 (en
Inventor
Junji Kido
淳二 城戸
Akira Ebisawa
晃 海老沢
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TDK Corp
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TDK Corp
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  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To realize an organic EL element which enables to achieve reliability of thermal stability and the like and high efficiency in the high brightness region at the same time by doping a triplet luminous material in an organic host material, particularly, in a non-conjugated unsaturated polymer. SOLUTION: The organic EL element comprises a hole injecting electrode, an electron injecting electrode and a luminous layer composed of an organic host material and a dopant disposed between these electrodes. The above organic material is made of a non-conjugated unsaturated polymer material and the above dopant is made of an organic metal complex capable of phosphorescence from a triplet state and contains at least a metal ion belonging to the VII family of the Mendeleyev periodic table.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は有機材料を用い、エ
レクトロルミネッセンス(EL)による発光・表示機能
を有する有機EL素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL device using an organic material and having a light-emitting / display function by electroluminescence (EL).

【0002】[0002]

【従来の技術】有機EL素子は、ホール注入電極トリフ
ェニルジアミン(TPD)などの低分子のホール輸送性
材料を真空蒸着法等により薄膜とし、その上にアルミキ
ノリノール錯体(Alq3 )などの低分子の蛍光物質を発
光層として積層し、さらにMgなどの仕事関数の小さな
金属電極(電子注入電極)を形成した基本構成を有する
素子で、10V前後の電圧で数千から数万cd/m2 とき
わめて高い輝度が得られることで注目されている。
2. Description of the Related Art An organic EL device is a thin film made of a low molecular hole transporting material such as a hole injection electrode triphenyldiamine (TPD) by a vacuum deposition method or the like, and a low molecular weight material such as an aluminum quinolinol complex (Alq3) is formed thereon. of the fluorescent material was laminated as a light emitting layer, further a small metal electrode element having a basic structure forming the (electron injection electrode) work function such as Mg, 10V tens of thousands cd / m 2 from thousands before and after voltage Attention has been paid to obtaining extremely high luminance.

【0003】一方で、高分子材料を用いた有機EL素子
も報告されている。高分子材料を用いることにより、抵
分子材料で問題となる熱安定性の向上、塗布によるプロ
セスの簡略化等が可能となり、欧米を中心に研究開発が
盛んである。
On the other hand, an organic EL device using a polymer material has also been reported. By using a polymer material, it is possible to improve the thermal stability and simplify the process by coating, which are problems with the molecular material, and R & D is being conducted mainly in Europe and the United States.

【0004】高分子有機EL素子は共役高分子を用いた
π共役型と非共役高分子中に色素を分散した分子分散型
に大別する事ができる。π共役型は、ケンブリッジ大学
による発表(Nature 347,539-541,1990)以来、主に欧
米を中心に研究され、現在では一昔前の低分子蒸着系に
匹敵する高輝度の素子の作成も可能になってきた。しか
しながら、π共役系の材料は、基本的に電流を流しやす
い材料である為、低い電圧で発光させる事が可能である
が、逆に数千〜数万cd/m2 といった高輝度領域での効
率は低く、発熱も激しい。このため、デューティ(Dut
y)駆動が必要となるパッシプマトリクスディスプレイ
等に用いることが難しい。
[0004] Polymer organic EL devices can be broadly classified into a π-conjugated type using a conjugated polymer and a molecular dispersion type in which a dye is dispersed in a non-conjugated polymer. The π-conjugated type has been studied mainly in Europe and the United States since the presentation by Cambridge University (Nature 347, 539-541, 1990), and now it is possible to create high-brightness devices comparable to low-molecular-weight deposition systems used to be a long time ago. Have been. However, a π-conjugated material is basically a material through which an electric current can easily flow, and thus can emit light at a low voltage. On the contrary, in a high luminance region such as several thousands to tens of thousands cd / m 2 , Efficiency is low and heat is intense. Therefore, the duty (Dut
y) It is difficult to use for a passive matrix display or the like that requires driving.

【0005】一方で分子分散型は、1883年(Polyme
r,Vol,24,748-754,1983)と報告は早く、歴史的にも長
いが、低分子型、π共役型と比較すると1/10以下程
度の特性しか得られていなかった。
On the other hand, the molecular dispersion type was used in 1883 (Polyme
r, Vol, 24, 748-754, 1983), which was early and long in history, but only about 1/10 or less of the properties were obtained compared to the low molecular weight type and the π-conjugated type.

【0006】ところで、従来の有機EL素子では発光材
料からの蛍光を利用している。材料が励起状態にあると
きには、一重項状態が25%、三重項状態が75%を占
めるため、従来の有機EL素子においては、三重項状態
のエネルギーは熱となり発光には寄与しない。
Incidentally, the conventional organic EL element utilizes fluorescence from a light emitting material. When the material is in the excited state, the singlet state occupies 25% and the triplet state occupies 75%. Therefore, in the conventional organic EL device, the energy of the triplet state becomes heat and does not contribute to light emission.

【0007】この三重項状態のエネルギーをEL発光に
利用しようという試みがHoshino等により行われている
(Appl.Phys.Lett.69,224-226(1996))。さらにプリン
ストン大学のグループにより、より効率の良い素子が作
成されている(Nature 395,151-154,1998)。この三重
項発光材料を用いた素子は、従来の一重項からのみの発
光を利用する有機EL素子に比べて数倍の輝度、効率を
示す事が報告されている。しかしながら、低分子材料を
用いた蒸着法により作成された素子であるため、熱安定
性等の信頼性がとれない、複雑な素子構成であるためプ
ロセスが複雑である等の問題がクリアできない。
An attempt to use the energy of the triplet state for EL emission has been made by Hoshino et al. (Appl. Phys. Lett. 69, 224-226 (1996)). More efficient devices have been created by a group at Princeton University (Nature 395, 151-154, 1998). It has been reported that a device using this triplet light-emitting material exhibits several times the luminance and efficiency as compared with a conventional organic EL device using light emission from only a singlet. However, since the device is formed by a vapor deposition method using a low-molecular material, problems such as a lack of reliability such as thermal stability and a complicated process due to a complicated device configuration cannot be solved.

【0008】[0008]

【発明が解決しようとする課題】本発明の目的は、三重
項発光材料を有機ホスト材料、特に非共役高分子中にド
ーピングすることにより、熱安定性等の信頼性、高輝度
領域での高効率化を同時に可能とする有機EL素子を実
現することである。
SUMMARY OF THE INVENTION It is an object of the present invention to dope a triplet light-emitting material into an organic host material, particularly a non-conjugated polymer, to obtain a material having high thermal stability and reliability. An object of the present invention is to realize an organic EL device that can simultaneously improve efficiency.

【0009】[0009]

【作用】分子同士が会合しやすく、エキシマーを形成し
やすいπ共役高分子中へ三重項発光材料のドーピングを
行うと、エキサイプレックスの形成や、再結合により、
得られたエネルギーがπ共役高分子同士により形成され
るエキシマレーへ移動してしまうことにより、三重項発
光材料から効果的に光を取り出す事ができなかった。一
方で有機ホスト材料、特にカルバゾールユニットを持つ
好ましくは非共役高分子では、エキサイプレックスを形
成せずに効果的に光を取り出すことが可能であり、輝
度、発光効率は、従来の素子の10倍にも達した。
[Action] When a triplet luminescent material is doped into a π-conjugated polymer in which molecules easily associate with each other and easily form excimers, exciplex formation and recombination may occur.
Since the obtained energy was transferred to the excimer array formed by the π-conjugated polymers, light could not be effectively extracted from the triplet luminescent material. On the other hand, organic host materials, particularly preferably non-conjugated polymers having a carbazole unit, can effectively extract light without forming an exciplex, and the luminance and luminous efficiency are 10 times higher than those of a conventional device. Also reached.

【0010】[0010]

【発明の実施の形態】本発明の有機EL素子は、ホール
注入電極と、電子注入電極と、これらの電極間に有機ホ
スト材料とドーパントからなる発光層を有し、前記有機
材料は非共役系の高分子材料であり、前記ドーパントは
3重項状態からの燐光発光が可能な有機金属錯体であ
り、少なくともメンデレエフ周期律表のVIII族に属する
金属イオンを含有するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An organic EL device according to the present invention has a hole injection electrode, an electron injection electrode, and a light emitting layer composed of an organic host material and a dopant between these electrodes. Wherein the dopant is an organometallic complex capable of emitting phosphorescence from a triplet state and contains at least a metal ion belonging to Group VIII of the Mendeleev periodic table.

【0011】このように、発光層を形成する有機ホスト
材料に、好ましくはカルバゾール基を有する非共役系の
高分子材料を用い、これに3重項状態からの燐光発光が
可能なVIII族に属する金属イオンを含有する有機金属錯
体をドーピングすることにより、極めて効率のよい発光
を行うことができる。
As described above, a non-conjugated polymer material having a carbazole group is preferably used as the organic host material for forming the light-emitting layer, and the non-conjugated polymer material belongs to Group VIII capable of emitting phosphorescence from a triplet state. By doping an organic metal complex containing a metal ion, extremely efficient light emission can be performed.

【0012】有機ホスト材料としては、電荷輸送性を有
し、特にホール輸送性を有するものが好ましい。
The organic host material preferably has a charge transporting property, and particularly preferably has a hole transporting property.

【0013】また、この高分子材料は、特にカルバゾー
ル基を有することが好ましい。具体的には、下記一般式
(I)で表されるカルバゾール化合物を挙げることがで
きる。
Further, the polymer material preferably has a carbazole group. Specifically, a carbazole compound represented by the following general formula (I) can be given.

【0014】[0014]

【化1】 Embedded image

【0015】上記式(I)において、R1 ,R2 は水
素、または炭素数1〜18のアルキル基を表し、Xは1
〜3環のフェニル基、またはアルキレン基を表す。式
(I)で表される化合物の分子量は、好ましくはMw=
10,000〜100,000である。R1 ,R2 はさ
らに置換基を有していてもよい。
In the above formula (I), R 1 and R 2 represent hydrogen or an alkyl group having 1 to 18 carbon atoms, and X represents 1
Represents a 3- to 3-ring phenyl group or an alkylene group. The molecular weight of the compound of formula (I) is preferably Mw =
It is 10,000-100,000. R 1 and R 2 may further have a substituent.

【0016】また、下記式(II)で表されるカルバゾー
ル化合物であってもよい。
Further, a carbazole compound represented by the following formula (II) may be used.

【0017】[0017]

【化2】 Embedded image

【0018】上記式(II)において、R3 ,R4 は水
素、または炭素数1〜18のアルキル基を表し、Yは1
〜3環のフェニル基、アルキレン基、またはキシリレン
基を表し、Arは1〜4環のフェニル基を表し、特にベ
ンゼン、アントラセン、ナフタセン誘導体が好ましい。
3 ,R4 およびY,Arはそれぞれさらに置換基を有
していてもよい。
In the above formula (II), R 3 and R 4 represent hydrogen or an alkyl group having 1 to 18 carbon atoms, and Y represents 1
Represents a 1 to 3 ring phenyl group, an alkylene group or a xylylene group, and Ar represents a 1 to 4 ring phenyl group, particularly preferably a benzene, anthracene or naphthacene derivative.
R 3 and R 4 and Y and Ar may further have a substituent.

【0019】X、Arで表されるフェニル基としては、
特に単環のフェニル基が好ましい。
As the phenyl group represented by X and Ar,
Particularly, a monocyclic phenyl group is preferable.

【0020】式(I)で表される有機ホスト材料である
非共役系ポリマーとしては、特に下記式に示す繰り返し
単位を有する高分子化合物が好ましい。
As the non-conjugated polymer which is an organic host material represented by the formula (I), a polymer compound having a repeating unit represented by the following formula is particularly preferable.

【0021】[0021]

【化3】 Embedded image

【0022】上記式において、好ましくはMw=10,
000〜100,000である。このような非共役系高
分子材料と、前記金属錯体を組み合わせることにより、
その効果をより一層高めることができる。
In the above formula, preferably Mw = 10,
000 to 100,000. By combining such a non-conjugated polymer material and the metal complex,
The effect can be further enhanced.

【0023】式(II)で表される有機ホスト材料として
は、特に下記に示すものが好ましい。
As the organic host material represented by the formula (II), those shown below are particularly preferable.

【0024】[0024]

【化4】 Embedded image

【0025】[0025]

【化5】 Embedded image

【0026】[0026]

【化6】 Embedded image

【0027】このような、有機ホスト材料のエネルギー
ギャップEg は2.4eV以上、特に2.9〜3.6eV以
上が好ましい。
The energy gap Eg of such an organic host material is preferably 2.4 eV or more, particularly preferably 2.9 to 3.6 eV.

【0028】本発明において、上記有機ホスト材料に3
重項状態から燐光発光可能な化合物をドーピングする。
燐光発光可能な有機化合物としては、3重項状態から燐
光発光可能な有機金属錯体であって、少なくともメンデ
ルの周期律表VIII族、つまりFe,Co,Ni,Ru,
Rh,Pd,Os,IrおよびPtから選択される金属
イオン、好ましくはIrまたはPtイオンを含有する金
属錯体である。
In the present invention, the organic host material may have 3
A compound capable of emitting phosphorescence from a multiplet state is doped.
The organic compound capable of emitting phosphorescence is an organometallic complex capable of emitting phosphorescence from a triplet state, and at least Group VIII of the periodic table of Mendel, that is, Fe, Co, Ni, Ru,
It is a metal complex containing a metal ion selected from Rh, Pd, Os, Ir and Pt, preferably an Ir or Pt ion.

【0029】このような金属錯体としては、配位子とし
て下記[化7]、[化8]で示されるものが好ましい。
なお、下記式においてMは上記の中心金属を表わし、R
101およびR102は特に限定されるものではないが、好ま
しくは炭素数1〜3のアルキル基、アルコキシ基であ
る。
As such a metal complex, ligands represented by the following [Formula 7] and [Formula 8] are preferable.
In the following formula, M represents the above central metal, and R
101 and R 102 are not particularly limited, but are preferably an alkyl group or an alkoxy group having 1 to 3 carbon atoms.

【0030】[0030]

【化7】 Embedded image

【0031】[0031]

【化8】 Embedded image

【0032】このような錯体の具体的な構造としては、
例えば下記に示すものが挙げられる。
The specific structure of such a complex is as follows:
For example, the following are mentioned.

【0033】[0033]

【化9】 Embedded image

【0034】[0034]

【化10】 Embedded image

【0035】[0035]

【化11】 Embedded image

【0036】[0036]

【化12】 Embedded image

【0037】[0037]

【化13】 Embedded image

【0038】[0038]

【化14】 Embedded image

【0039】また、下記に示す白金錯体(2,3,7,8,12,1
3,17,18-Octaethyl -21H,23H-porphine platinum )等
も好ましく、これらの中では特にイリジウム錯体:トリ
ス(2−フェニルピリジン)イリジウム〔Ir(ppy)3〕が
好ましい。なお、下記式においてMは上記中心金属を表
し、特にPtが好ましい。
Further, the following platinum complexes (2,3,7,8,12,1)
3,17,18-Octaethyl -21H, 23H-porphine platinum) and the like are also preferable, and among these, an iridium complex: tris (2-phenylpyridine) iridium [Ir (ppy) 3] is particularly preferable. In the following formula, M represents the above central metal, and Pt is particularly preferable.

【0040】[0040]

【化15】 Embedded image

【0041】これらの金属錯体の発光層における含有率
は、全成分に対し好ましくは0.1〜10 mol%、特に
1〜10 mol%である。
The content of these metal complexes in the light emitting layer is preferably from 0.1 to 10 mol%, particularly from 1 to 10 mol%, based on all components.

【0042】上記有機ホスト材料は電荷輸送性、好まし
くはホール輸送性を有する材料である。有機ホスト材料
がホール輸送性を有するとき、発光層に電子輸送性材料
を混合してもよい。電子輸送性材料としては、従来の蒸
着系に用いられている低分子の有機化合物が使用可能で
あるが、高分子材料でもよい。
The organic host material is a material having a charge transporting property, preferably a hole transporting property. When the organic host material has a hole transporting property, an electron transporting material may be mixed in the light emitting layer. As the electron transporting material, a low molecular organic compound used in a conventional vapor deposition system can be used, but a polymer material may be used.

【0043】具体的には、AlQ3(トリス(8−ヒド
ロキシ−キノリノ)アルミニウム)、BeQ2(ビス
(8−ヒドロキシ−キノリノ)ベリリウム)、Zn(B
OZ)2(亜鉛−ビス−ベンゾキサゾール)、Zn(B
TZ)2(亜鉛−ビス−ベンゾチアゾール)、Eu(D
BM)3(Phen)(トリス(1,3−ジフェニル−
1,3−プロパンジオノ)(モノフェナントロリン)ユ
ーロピウム(III))、PBD(2−(4−ビフェニ
ル)−5−(4−tert−ブチルフェニル)−1,
3,4−オキサジアゾール)、Butyl−PBD(2
−ビフェニル−5−(パラ−tert−ブチルフェニ
ル)−1,3,4−オキサジアゾール)、TAZ(1−
フェニル−2−ビフェニル−5−パラ−tert−ブチ
ルフェニル−1,3,4−トリアゾール)等の1種以上
を挙げることができる。
Specifically, AlQ3 (tris (8-hydroxy-quinolino) aluminum), BeQ2 (bis (8-hydroxy-quinolino) beryllium), Zn (B
OZ) 2 (zinc-bis-benzoxazole), Zn (B
TZ) 2 (zinc-bis-benzothiazole), Eu (D
BM) 3 (Phen) (tris (1,3-diphenyl-
1,3-propanediono) (monophenanthroline) europium (III), PBD (2- (4-biphenyl) -5- (4-tert-butylphenyl) -1,
3,4-oxadiazole), Butyl-PBD (2
-Biphenyl-5- (para-tert-butylphenyl) -1,3,4-oxadiazole), TAZ (1-
Phenyl-2-biphenyl-5-para-tert-butylphenyl-1,3,4-triazole) and the like.

【0044】このような電子輸送性材料の含有率は、発
光層の全成分に対し10〜50質量%、特に20〜40
質量%が好ましい。
The content of such an electron transporting material is from 10 to 50% by mass, especially from 20 to 40% by mass based on all components of the light emitting layer.
% By mass is preferred.

【0045】上記発光層は、単独で形成されていてもよ
いし、複数層で構成されていてもよい。複数層で構成さ
れている場合には、ホール輸送性の層と電子輸送性の層
を別個に形成してもよい。また、膜厚方向に前記有機ホ
スト材料、あるいはその他の構成材料が濃度勾配を有し
ていてもよい。複数層有する場合や濃度勾配を有する場
合には、陰電極側に電子輸送性材料が、ホール注入電極
側にホール輸送性材料が多く存在するようにするとよ
い。
The above-mentioned light emitting layer may be formed singly or may be composed of a plurality of layers. When it is composed of a plurality of layers, the hole transporting layer and the electron transporting layer may be formed separately. Further, the organic host material or another constituent material may have a concentration gradient in the film thickness direction. When there are a plurality of layers or when there is a concentration gradient, it is preferable that the electron transporting material be more present on the negative electrode side and the hole transporting material be present more on the hole injection electrode side.

【0046】発光層に用いる材料の電荷輸送能について
は、ホールドリフトモービリティーで、10-2 〜10
-5 cm2 /Vsが好ましく、より好ましくは10-3 cm
2 /Vs以上である。また室温暗電導性で、10-11
10-9 Scm-1 が好ましく、より好ましくは10-10 Scm
-1 以上である。
The charge transporting ability of the material used for the light emitting layer is 10 −2 to 10 by hole drift mobility.
-5 cm 2 / Vs is preferred, more preferably 10 -3 cm
2 / Vs or more. In addition, room temperature dark conductivity, 10 -11 ~
10 −9 Scm −1 is preferred, and more preferably 10 −10 Scm
-1 or more.

【0047】本発明の有機EL素子は、ホール注入電極
と、上記発光層との間に電極界面改善層を有していても
よい。
The organic EL device of the present invention may have an electrode interface improving layer between the hole injection electrode and the light emitting layer.

【0048】電極界面改質層としては、ポリジオキシチ
オフェン類を含有する有機高分子層が好ましい。
As the electrode interface modification layer, an organic polymer layer containing polydioxythiophenes is preferable.

【0049】上記ポリジオキシチオフェン類は、好まし
くはポリアニオンの存在下でカチオン帯電していて、式
(III)で表される構造単位を含有するものである。
The above polydioxythiophenes are preferably cationically charged in the presence of a polyanion and contain a structural unit represented by the formula (III).

【0050】[0050]

【化16】 Embedded image

【0051】[式中、A1 およびA2 は、互いに独立し
て各々、置換もしくは未置換の炭素数1〜14のアルキ
ル基を表すか、あるいは一緒になって置換もしくは未置
換の炭素数1〜14のアルキレンを形成しており、そし
てnは、2から10,000、好適には5から5000
の整数を表す]
[In the formula, A 1 and A 2 each independently represent a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms, or together form a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms. ~ 14 alkylenes and n is from 2 to 10,000, preferably from 5 to 5000
Represents the integer of

【0052】好適なカチオン性ポリジオキシチオフェン
類は下記式(IIIa)または(IIIb)で表される構造単
位を含有するものである。
Preferred cationic polydioxythiophenes are those containing a structural unit represented by the following formula (IIIa) or (IIIb).

【0053】[0053]

【化17】 Embedded image

【0054】[式中、R11 およびR12 は、互いに独立
して、水素、置換もしくは未置換の炭素数1〜18のア
ルキル基、好適には炭素数1〜10、特に炭素数1〜6
のアルキル基、炭素数2〜12のアルケニル基、好適に
は炭素数2〜8のアルケニル基、炭素数3〜7のシクロ
アルキル基、好適にはシクロペンチル基またはシクロヘ
キシル基、炭素数7〜15のアラルキル基、好適にはフ
ェニル−炭素数1〜4のアルキル基、炭素数6〜10の
アリール基、好適にはフェニル基またはナフチル基、炭
素数1〜18のアルキルオキシ基、好適には炭素数1〜
10のアルキルオキシ基、例えばメトキシ基、エトキシ
基、n−もしくはイソ−プロポキシ基など、または炭素
数2〜18のアルキルオキシエステル基を表し、そして
13 、R1 4 は、互いに独立して、両方ともが同時では
ないが水素を表すか、あるいは各々が少なくとも1個の
スルホネート基で置換されている炭素数1〜18のアル
キル基、好適には炭素数1〜10、特に炭素数1〜6の
アルキル基、炭素数2〜12のアルケニル基、好適には
炭素数2〜8のアルケニル基、炭素数3〜7のシクロア
ルキル基、好適にはシクロペンチル基またはシクロヘキ
シル基、炭素数7〜15のアラルキル基、好適にはフェ
ニル−炭素数1〜4のアルキル基、炭素数6〜10のア
リール基、好適にはフェニルまたはナフチル基、炭素数
1〜18のアルキルオキシ基、好適には炭素数1〜10
のアルキルオキシ基、例えばメトキシ基、エトキシ基、
n−もしくはイソ−プロポキシ基など、または炭素数2
〜18のアルキルオキシエステル基を表し、nは、2か
ら10,000、好適には5から5000の数を表す]
[Wherein R 11 and R 12 independently of one another are hydrogen, a substituted or unsubstituted alkyl group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms.
An alkyl group, an alkenyl group having 2 to 12 carbon atoms, preferably an alkenyl group having 2 to 8 carbon atoms, a cycloalkyl group having 3 to 7 carbon atoms, preferably a cyclopentyl group or a cyclohexyl group, having 7 to 15 carbon atoms. An aralkyl group, preferably a phenyl-alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 10 carbon atoms, preferably a phenyl group or a naphthyl group, an alkyloxy group having 1 to 18 carbon atoms, preferably a carbon number 1 to
10 alkyloxy group such as methoxy group, ethoxy group, n- or iso - such as propoxy, or an alkyloxy ester group having 2 to 18 carbon atoms, and R 13, R 1 4 independently of one another, Both are not simultaneous but represent hydrogen or each have 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, especially 1 to 6 carbon atoms, each being substituted by at least one sulfonate group. An alkyl group, an alkenyl group having 2 to 12 carbon atoms, preferably an alkenyl group having 2 to 8 carbon atoms, a cycloalkyl group having 3 to 7 carbon atoms, preferably a cyclopentyl group or a cyclohexyl group, having 7 to 15 carbon atoms. An aralkyl group, preferably a phenyl-alkyl group having 1 to 4 carbon atoms, an aryl group having 6 to 10 carbon atoms, preferably a phenyl or naphthyl group, an alkyl group having 1 to 18 carbon atoms. Group, preferably having 1 to 10 carbon atoms
Alkyloxy group such as methoxy group, ethoxy group,
n- or iso-propoxy group or the like, or 2 carbon atoms
-18 alkyloxyester groups, n representing a number from 2 to 10,000, preferably from 5 to 5000]

【0055】特に好適には、下記の式(IIIa−1)ま
たは(IIIb−1)で表される少なくとも1種のカチオ
ン性もしくは帯電していない導電性化合物を含有する。
Particularly preferably, it contains at least one cationic or uncharged conductive compound represented by the following formula (IIIa-1) or (IIIb-1).

【0056】[0056]

【化18】 Embedded image

【0057】[式中、R15 は、上記R13 、R14 と同
義であり、nは、2から10,000、好適には5から
5000の整数を表す]エレクトロクロミックポリジオ
キシチオフェンを含める。
[Wherein, R 15 has the same meaning as R 13 and R 14 described above, and n represents an integer of 2 to 10,000, preferably 5 to 5000]. Electrochromic polydioxythiophene is included.

【0058】上記ポリアニオンは、高分子カルボン酸、
例えばポリアクリル酸、ポリメタアクリル酸またはポリ
マレイン酸などのアニオン、または高分子スルホン酸、
例えばポリスチレンスルホン酸およびポリビニルスルホ
ン酸などのアニオンである。このようなポリカルボン酸
およびポリスルホン酸は、また、ビニルカルボン酸およ
びビニルスルホン酸と他の重合性モノマー類、例えばア
クリル酸エステルおよびスチレンなどから作られた共重
合体であってもよい。
The polyanion is a polymer carboxylic acid,
For example, polyacrylic acid, anion such as polymethacrylic acid or polymaleic acid, or polymeric sulfonic acid,
For example, anions such as polystyrene sulfonic acid and polyvinyl sulfonic acid. Such polycarboxylic acids and polysulfonic acids may also be copolymers made from vinylcarboxylic acids and vinylsulfonic acids and other polymerizable monomers such as acrylates and styrene.

【0059】対イオンとしてポリスチレンスルホン酸の
アニオンが特に好適である。
As a counter ion, an anion of polystyrene sulfonic acid is particularly preferred.

【0060】上記ポリアニオンを与えるポリ酸の分子量
を好適には1000から2,000,000、特に好適
には2000から500,000にする。このようなポ
リ酸またはそれらのアルカリ金属塩、例えばポリスチレ
ンスルホン酸およびポリアクリル酸などは商業的に入手
可能であるか、あるいは公知の方法で調製可能である
(例えばHouben−Weyl,Methoden
der organischen Chemie, E 2
0巻 Makromolekulare Stoffe、
パート2、(1987)、1141頁以降参照)。
The molecular weight of the polyacids giving the polyanions is preferably between 1000 and 2,000,000, particularly preferably between 2000 and 500,000. Such polyacids or their alkali metal salts, such as polystyrenesulfonic acid and polyacrylic acid, are commercially available or can be prepared by known methods (eg, Houben-Weyl, Methoden).
der organischen Chemie, E2
Volume 0 Makromolekulare Stoffe,
Part 2, (1987), pages 1141 et seq.).

【0061】ポリジオキシチオフェン類とポリアニオン
類の分散物を生じさせる時に要求される遊離ポリ酸の代
わりに、また、上記ポリ酸のアルカリ金属塩と相当する
量のモノ酸から成る混合物を用いることも可能である。
Instead of the free polyacid required to form a dispersion of polydioxythiophenes and polyanions, it is also possible to use a mixture of the above-mentioned alkali metal salts of polyacids and corresponding amounts of monoacids. It is possible.

【0062】式(III b−1)の場合のポリジオキシチ
オフェン類は、その構造単位内に正電荷と負電荷を持
つ。このようなポリジオキシチオフェン類の製造は例え
ばヨーロッパ特許出願公開第0 440 957号(=米
国特許第5 300 575号)などに記述されている。
The polydioxythiophenes of the formula (IIIb-1) have a positive charge and a negative charge in their structural units. The production of such polydioxythiophenes is described, for example, in EP-A-0 440 957 (= US Pat. No. 5,300,575).

【0063】このようなポリジオキシチオフェン類は酸
化重合で得られる。その結果としてそれらは正電荷を取
得するが、それらの価および位置を明確に測定するのは
不可能であることから、それを式中には示していない。
Such polydioxythiophenes are obtained by oxidative polymerization. As a result, they acquire a positive charge, but they are not shown in the formula, since their valence and position cannot be determined unambiguously.

【0064】これらの高分子化合物は溶媒中に溶解し、
塗布、キャスティング、ディッピング等により基板上に
所望の高分子層を形成することができる。
These polymer compounds are dissolved in a solvent,
A desired polymer layer can be formed on the substrate by coating, casting, dipping, or the like.

【0065】これらの高分子化合物の溶媒としては、特
に限定されるものではなく、公知の材料のものから好適
なものを選択して用いることができる。具体的には、ト
ルエン、キシレン、クロロホルム等の有機溶媒や、アル
コール、水などを材料により使い分ければよい。
The solvent for these polymer compounds is not particularly limited, and a suitable one can be selected from known materials. Specifically, an organic solvent such as toluene, xylene, or chloroform, alcohol, or water may be used depending on the material.

【0066】本発明において、有機EL構造体を形成す
る基板としては、非晶質基板たとえばガラス、石英な
ど、結晶基板たとえば、Si、GaAs、ZnSe、Z
nS、GaP、InPなどがあげられ、またこれらの結
晶基板に結晶質、非晶質あるいは金属のバッファ層を形
成した基板も用いることができる。また金属基板として
は、Mo、Al、Pt、Ir、Au、Pdなどを用いる
ことができ、好ましくはガラス基板が用いられる。基板
は、光取り出し側となる場合、下記電極と同様な光透過
性を有することが好ましい。
In the present invention, the substrate on which the organic EL structure is formed is an amorphous substrate such as glass or quartz, or a crystalline substrate such as Si, GaAs, ZnSe, or Z.
Examples thereof include nS, GaP, and InP, and a substrate in which a crystalline, amorphous, or metal buffer layer is formed on these crystalline substrates can also be used. As the metal substrate, Mo, Al, Pt, Ir, Au, Pd, or the like can be used, and a glass substrate is preferably used. When the substrate is on the light extraction side, it is preferable that the substrate has the same light transmittance as the following electrodes.

【0067】電子注入電極としては、低仕事関数の物質
が好ましく、例えば、Cs、K、Li、Na、Mg、L
a、Ce、Ca、Sr、Ba、Al、Ag、In、S
n、Zn、Zr等の金属元素単体、または安定性を向上
させるためにそれらを含む2成分、3成分の合金系を用
いることが好ましい。合金系としては、例えばAg・M
g(Ag:0.1〜50at%)、Al・Li(Li:
0.01〜14at%)、In・Mg(Mg:50〜80
at%)、Al・Ca(Ca:0.01〜20at%)、L
iF(F:40〜60at%)等が好ましい。電子注入電
極は、上記配線電極と兼用してもよいし、別々に形成し
てもよい。電子注入電極は蒸着法やスパッタ法で形成す
ることが可能である。
As the electron injection electrode, a substance having a low work function is preferable. For example, Cs, K, Li, Na, Mg, L
a, Ce, Ca, Sr, Ba, Al, Ag, In, S
It is preferable to use a single metal element such as n, Zn, or Zr, or a two-component or three-component alloy system containing them to improve stability. As an alloy system, for example, Ag · M
g (Ag: 0.1 to 50 at%), Al.Li (Li:
0.01-14 at%), In.Mg (Mg: 50-80)
at%), Al.Ca (Ca: 0.01 to 20 at%), L
iF (F: 40 to 60 at%) and the like are preferable. The electron injection electrode may be used also as the wiring electrode, or may be formed separately. The electron injection electrode can be formed by an evaporation method or a sputtering method.

【0068】電子注入電極薄膜の厚さは、電子注入を十
分行える一定以上の厚さとすれば良く、0.1nm以上、
好ましくは1nm以上とすればよい。また、その上限値に
は特に制限はないが、通常膜厚は1〜500nm程度とす
ればよい。
The thickness of the electron injecting electrode thin film may be a certain thickness or more for sufficiently injecting electrons.
Preferably, the thickness may be 1 nm or more. The upper limit is not particularly limited, but the thickness may be generally about 1 to 500 nm.

【0069】ホール注入電極は、通常基板側から発光し
た光を取り出す構成であるため、透明ないし半透明な電
極が好ましい。透明電極としては、ITO(錫ドープ酸
化インジウム)、IZO(亜鉛ドープ酸化インジウ
ム)、ZnO、SnO2、In2 3等が挙げられるが、
好ましくはITO(錫ドープ酸化インジウム)、IZO
(亜鉛ドープ酸化インジウム)が好ましい。ITOは、
通常In23とSnOとを化学量論組成で含有するが、
O量は多少これから偏倚していてもよい。
The hole injection electrode usually emits light from the substrate side.
Because it is a structure that extracts light, it is transparent or translucent.
Pole is preferred. ITO (tin-doped acid)
Indium oxide), IZO (zinc-doped indium oxide)
), ZnO, SnOTwo, InTwoO ThreeAnd the like,
Preferably ITO (tin-doped indium oxide), IZO
(Zinc-doped indium oxide) is preferred. ITO
Normal InTwoOThreeAnd SnO in a stoichiometric composition,
The amount of O may slightly deviate from this.

【0070】ホール注入電極は、発光波長帯域、通常3
50〜800nm、特に各発光光に対する光透過率が50
%以上、特に60%以上であることが好ましい。通常、
発光光はホール注入電極を通って取り出されるため、そ
の透過率が低くなると、発光層からの発光自体が減衰さ
れ、発光素子として必要な輝度が得られなくなる傾向が
ある。ただし、一方のみから発光光を取り出すときに
は、取り出す側が上記以上であればよい。
The hole injection electrode has an emission wavelength band, usually 3
50 to 800 nm, especially 50% light transmittance for each emitted light.
%, Especially 60% or more. Normal,
Since the emitted light is extracted through the hole injection electrode, if the transmittance is low, the emission itself from the light emitting layer is attenuated, and the luminance required for the light emitting element tends not to be obtained. However, when the emitted light is extracted from only one side, the side from which the emitted light is extracted need only be equal to or more than the above.

【0071】ホール注入電極の厚さは、ホール注入を十
分行える一定以上の厚さを有すれば良く、好ましくは5
0〜500nm、さらには50〜300nmの範囲が好まし
い。また、その上限は特に制限はないが、あまり厚いと
剥離などの心配が生じる。厚さが薄すぎると、製造時の
膜強度やホール輸送能力、抵抗値の点で問題がある。
The thickness of the hole injecting electrode may be a certain thickness or more which can sufficiently inject holes, and is preferably 5 or more.
The range is preferably from 0 to 500 nm, more preferably from 50 to 300 nm. The upper limit is not particularly limited, but if the thickness is too large, there is a fear of peeling or the like. If the thickness is too small, there is a problem in the film strength at the time of manufacturing, the hole transport ability, and the resistance value.

【0072】このホール注入電極層は蒸着法等によって
も形成できるが、好ましくはスパッタ法により形成する
ことが好ましい。
This hole injection electrode layer can be formed by a vapor deposition method or the like, but is preferably formed by a sputtering method.

【0073】さらに、素子の有機層や電極の酸化を防ぐ
ために、素子上を封止板等により封止することが好まし
い。封止板は、湿気の侵入を防ぐために、接着性樹脂層
を用いて、封止板を接着し密封する。封止ガスは、A
r、He、N2 等の不活性ガス等が好ましい。また、こ
の封止ガスの水分含有量は、100ppm 以下、より好ま
しくは10ppm 以下、特には1ppm 以下であることが好
ましい。この水分含有量に下限値は特にないが、通常
0.1ppm 程度である。
Further, in order to prevent oxidation of the organic layer and the electrodes of the element, it is preferable to seal the element with a sealing plate or the like. The sealing plate adheres and seals the sealing plate using an adhesive resin layer in order to prevent moisture from entering. The sealing gas is A
An inert gas such as r, He, and N 2 is preferable. Further, the moisture content of the sealing gas is preferably 100 ppm or less, more preferably 10 ppm or less, and particularly preferably 1 ppm or less. Although there is no particular lower limit for the water content, it is usually about 0.1 ppm.

【0074】封止板の材料としては、好ましくは平板状
であって、ガラスや石英、樹脂等の透明ないし半透明材
料が挙げられるが、特にガラスが好ましい。このような
ガラス材として、コストの面からアルカリガラスが好ま
しいが、この他、ソーダ石灰ガラス、鉛アルカリガラ
ス、ホウケイ酸ガラス、アルミノケイ酸ガラス、シリカ
ガラス等のガラス組成のものも好ましい。特に、ソーダ
ガラスで、表面処理の無いガラス材が安価に使用でき、
好ましい。封止板としては、ガラス板以外にも、金属
板、プラスチック板等を用いることもできる。
The material of the sealing plate is preferably a flat plate, and may be a transparent or translucent material such as glass, quartz, resin, etc., and glass is particularly preferred. As such a glass material, an alkali glass is preferable from the viewpoint of cost, and in addition, a glass composition such as soda lime glass, lead alkali glass, borosilicate glass, aluminosilicate glass, and silica glass is also preferable. In particular, soda glass, a glass material without surface treatment can be used at low cost,
preferable. As the sealing plate, other than a glass plate, a metal plate, a plastic plate, or the like can be used.

【0075】封止板は、スペーサーを用いて高さを調整
し、所望の高さに保持してもよい。スペーサーの材料と
しては、樹脂ビーズ、シリカビーズ、ガラスビーズ、ガ
ラスファイバー等が挙げられ、特にガラスビーズ等が好
ましい。なお、封止板に凹部を形成した場合には、スペ
ーサーは使用しても、使用しなくてもよい。
The height of the sealing plate may be adjusted by using a spacer, and may be maintained at a desired height. Examples of the material of the spacer include resin beads, silica beads, glass beads, and glass fibers, and glass beads are particularly preferable. When a recess is formed in the sealing plate, the spacer may or may not be used.

【0076】スペーサーは、予め封止用接着剤中に混入
されていても、接着時に混入してもよい。封止用接着剤
中におけるスペーサーの含有量は、好ましくは0.01
〜30wt%、より好ましくは0.1〜5wt%である。
The spacer may be mixed in the sealing adhesive in advance, or may be mixed at the time of bonding. The content of the spacer in the sealing adhesive is preferably 0.01
-30 wt%, more preferably 0.1-5 wt%.

【0077】接着剤としては、安定した接着強度が保
て、気密性が良好なものであれば特に限定されるもので
はないが、カチオン硬化タイプの紫外線硬化型エポキシ
樹脂接着剤を用いることが好ましい。
The adhesive is not particularly limited as long as it can maintain stable adhesive strength and has good airtightness, but it is preferable to use a cationic curing type ultraviolet curing epoxy resin adhesive. .

【0078】基板に色フィルター膜や蛍光性物質を含む
色変換膜、あるいは誘電体反射膜を用いて発光色をコン
トロールしてもよい。
The emission color may be controlled by using a color filter film, a color conversion film containing a fluorescent substance, or a dielectric reflection film on the substrate.

【0079】色フィルター膜には、液晶ディスプレイ等
で用いられているカラーフィルターを用いれば良いが、
有機EL素子の発光する光に合わせてカラーフィルター
の特性を調整し、取り出し効率・色純度を最適化すれば
よい。
As the color filter film, a color filter used in a liquid crystal display or the like may be used.
The characteristics of the color filter may be adjusted in accordance with the light emitted from the organic EL element to optimize the extraction efficiency and the color purity.

【0080】また、EL素子材料や蛍光変換層が光吸収
するような短波長の外光をカットできるカラーフィルタ
ーを用いれば、素子の耐光性・表示のコントラストも向
上する。
When a color filter capable of cutting off short-wavelength external light that is absorbed by the EL element material or the fluorescence conversion layer is used, the light resistance of the element and the contrast of display are improved.

【0081】また、誘電体多層膜のような光学薄膜を用
いてカラーフィルターの代わりにしても良い。
An optical thin film such as a dielectric multilayer film may be used instead of the color filter.

【0082】蛍光変換フィルター膜は、EL発光の光を
吸収し、蛍光変換膜中の蛍光体から光を放出させること
で、発光色の色変換を行うものであるが、組成として
は、バインダー、蛍光材料、光吸収材料の三つから形成
される。
The fluorescence conversion filter film absorbs EL light and emits light from the phosphor in the fluorescence conversion film to convert the color of emitted light. The composition includes a binder, It is formed from a fluorescent material and a light absorbing material.

【0083】蛍光材料は、基本的には蛍光量子収率が高
いものを用いれば良く、EL発光波長域に吸収が強いこ
とが望ましい。実際には、レーザー色素などが適してお
り、ローダミン系化合物・ペリレン系化合物・シアニン
系化合物・フタロシアニン系化合物(サブフタロシアニ
ン等も含む)ナフタロイミド系化合物・縮合環炭化水素
系化合物・縮合複素環系化合物・スチリル系化合物・ク
マリン系化合物等を用いればよい。
As the fluorescent material, basically, a material having a high fluorescence quantum yield may be used, and it is desirable that the fluorescent material has strong absorption in the EL emission wavelength region. In practice, laser dyes and the like are suitable, and rhodamine compounds, perylene compounds, cyanine compounds, phthalocyanine compounds (including subphthalocyanines, etc.) naphthalimide compounds, condensed ring hydrocarbon compounds, condensed heterocyclic compounds A styryl compound, a coumarin compound or the like may be used.

【0084】バインダーは、基本的に蛍光を消光しない
ような材料を選べば良く、フォトリソグラフィー・印刷
等で微細なパターニングが出来るようなものが好まし
い。また、基板上にホール注入電極と接する状態で形成
される場合、ホール注入電極(ITO、IZO等)の成
膜時にダメージを受けないような材料が好ましい。
As the binder, basically, a material that does not quench the fluorescence may be selected, and a binder that can be finely patterned by photolithography, printing, or the like is preferable. Further, in the case of being formed on the substrate in contact with the hole injection electrode, a material which is not damaged when forming the hole injection electrode (ITO, IZO, or the like) is preferable.

【0085】光吸収材料は、蛍光材料の光吸収が足りな
い場合に用いるが、必要のない場合は用いなくても良
い。また、光吸収材料は、蛍光性材料の蛍光を消光しな
いような材料を選べば良い。
The light absorbing material is used when the light absorption of the fluorescent material is insufficient, but may be omitted when unnecessary. As the light absorbing material, a material that does not quench the fluorescence of the fluorescent material may be selected.

【0086】本発明の有機EL素子は、例えば、図1に
示すように基板1/ホール注入電極2/電極界面改質層
3/発光層4/電子注入電極5とが順次積層された順積
層の構成となる。また、この積層順序を逆にした逆積層
としてもよく、要求される性能や仕様などにより最適な
積層構成とすればよい。
The organic EL device of the present invention has, for example, a normal lamination in which a substrate 1 / hole injection electrode 2 / electrode interface modification layer 3 / light emitting layer 4 / electron injection electrode 5 are sequentially stacked as shown in FIG. Configuration. In addition, the stacking order may be reversed, and an optimum stacking configuration may be set according to required performance and specifications.

【0087】有機EL素子は、直流駆動やパルス駆動さ
れ、また交流駆動も可能である。印加電圧は、通常、2
〜30V 程度である。
The organic EL element is driven by a direct current or a pulse, and can be driven by an alternating current. The applied voltage is usually 2
It is about 30V.

【0088】本発明の有機EL素子は、ディスプレイと
しての応用の他、例えばメモり読み出し/書き込み等に
利用される光ピックアップ、光通信の伝送路中における
中継装置、フォトカプラ等、種々の光応用デバイスに用
いることができる。
The organic EL device of the present invention can be applied to various optical applications such as an optical pickup used for memory read / write, a relay device in a transmission line of optical communication, a photocoupler, etc. in addition to a display application. Can be used for devices.

【0089】[0089]

【実施例】<実施例1>ITO基板を中性洗剤、超純
水、アセトン、エタノールの順に超音波洗浄した後、U
V/O3 洗浄を行った。
<Example 1> An ITO substrate was subjected to ultrasonic cleaning in the order of a neutral detergent, ultrapure water, acetone and ethanol.
A V / O 3 wash was performed.

【0090】ポリ(3,4−エチレンジオキシチオフェ
ン)−ポリスチレンスルホネート〔Poly(3,4)ethylened
ioxythiophen-polystyrenesulphonate(PEDOT/PSS)〕を
ITO基板上にスピンコー卜法により50nm成膜した
後、110℃にて1時間真空乾燥し、ホール注入電極を
作成した。
Poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate [Poly (3,4) ethylened
[Ioxythiophen-polystyrenesulphonate (PEDOT / PSS)] was formed on an ITO substrate by a spin coat method to form a film having a thickness of 50 nm, followed by vacuum drying at 110 ° C. for 1 hour to form a hole injection electrode.

【0091】ホール輸送性材料であるポリビニルカルバ
ゾール〔Polyvinylcarbazole(PVK)〕に電子輸送性材料
として2−(4’−テルト−ブチルフェニル)−5−
(4’−ビフェニル)−1,3,4−オキサジアゾール
〔2-(4'-tert-Butylphenyl)-5-(4'-biphenyl)-1,3,4-ox
adiazole〕を30wt%の割合で添加し、さらに三重項発
光材料であるイリジウム錯体(Ir(ppy)3)を1 mol%の
割合でドーピングし、トルエンに20mg/mlの濃度とな
るように溶解させた。この溶液をPEDOTを成膜した
ITO基板上にスピンコー卜法により100nm成膜し、
50℃にて1時間真空乾燥し、発光層とした。
Polyvinylcarbazole (Polyvinylcarbazole (PVK)) which is a hole-transporting material was used as an electron-transporting material and 2- (4'-tert-butylphenyl) -5-
(4'-biphenyl) -1,3,4-oxadiazole [2- (4'-tert-Butylphenyl) -5- (4'-biphenyl) -1,3,4-ox
adiazole] at a ratio of 30% by weight, and further doped with an iridium complex (Ir (ppy) 3), which is a triplet light emitting material, at a ratio of 1 mol%, and dissolved in toluene to a concentration of 20 mg / ml. Was. This solution was spin-coated to form a 100 nm film on a PEDOT-formed ITO substrate.
Vacuum drying was performed at 50 ° C. for 1 hour to obtain a light emitting layer.

【0092】次いで、基板を真空装置内に固定し、槽内
を1×10-4 Pa以下まで減圧した後、LiFを0.5n
m、次いでAlを100nm蒸着し、電子注入電極および
補助電極の陰極とした。
Next, the substrate was fixed in a vacuum device, the pressure in the tank was reduced to 1 × 10 −4 Pa or less, and then LiF was
m, and then Al was deposited to a thickness of 100 nm to form a cathode for an electron injection electrode and an auxiliary electrode.

【0093】最後にガラス封止をして有機EL表示装置
を得た。
Finally, glass sealing was performed to obtain an organic EL display device.

【0094】この素子にITOを陽電極、Alを陰電極
として電界をかけたところ、10mA/cm2 の電流密度で
2000cd/m2 の輝度が得られた。最大電流効率は2
3cd/A 、最高輝度は25000cd/m2 に達した。
When an electric field was applied to this device using ITO as a positive electrode and Al as a negative electrode, a luminance of 2000 cd / m 2 was obtained at a current density of 10 mA / cm 2 . Maximum current efficiency is 2
3 cd / A and the maximum luminance reached 25000 cd / m 2 .

【0095】<実施例2>ホール輸送性材料としてPV
Kの変わりにポリビニルトリフェニルアミン〔Polyviny
ltriphenylamine〕を用いた以外は、実施例1と同様に
して有機EL素子を作成した。
<Example 2> PV was used as the hole transporting material.
Polyvinylyphenylamine [Polyviny
An organic EL device was prepared in the same manner as in Example 1 except that [ltriphenylamine] was used.

【0096】この素子では10mA/cm2 の電流密度で1
500cd/m2 の輝度が得られた。最大電流効率は15c
d/A 、最高輝度は17000cd/m2 に達した。
In this element, a current density of 10 mA / cm 2
A luminance of 500 cd / m 2 was obtained. Maximum current efficiency is 15c
d / A and the maximum luminance reached 17000 cd / m 2 .

【0097】<比較例1>PEDOTの成膜までは実施
例1と同様の手順で行った。
<Comparative Example 1> The same procedure as in Example 1 was performed up to the formation of PEDOT.

【0098】π共役高分子であるポリ(9,9−ジオク
チルフルオレン)〔Poly(9,9-diocthylfluorene)〕中に
1 mol%の濃度となるようにIr(ppy)3 を添加しクロロ
ホルム溶液に溶解した。この溶液を用いて、PEDOT
を成膜したITO基板上にスピンコート法により100
nm成膜した。
Ir (ppy) 3 was added to π-conjugated polymer poly (9,9-dioctylfluorene) [Poly (9,9-diocthylfluorene)] so as to have a concentration of 1 mol%, and added to a chloroform solution. Dissolved. Using this solution, PEDOT
100 on the ITO substrate on which
nm was formed.

【0099】次いで、基板を真空装置内に固定し、層内
を1×10-4 Pa以下まで減圧した後、LiFを0.5n
m、次いでAlを100nm蒸着し、電子注入電極および
補助電極の陰極とした。
Next, the substrate was fixed in a vacuum device, and the pressure in the layer was reduced to 1 × 10 −4 Pa or less.
m, and then Al was deposited to a thickness of 100 nm to form a cathode for an electron injection electrode and an auxiliary electrode.

【0100】最後にガラス封止をして有機EL表示装置
を得た。
Finally, glass sealing was performed to obtain an organic EL display device.

【0101】この素子では、Ir(ppy)3 からの発光も確
認できるが、ポリ(9,9−ジオクチルフルオレン)
〔Poly(9,9-diocthylfluorene)〕とのエキサイプレック
スからの発光が支配的になってしまっていた。このた
め、10mA/cm2 の電流密度で100cd/m2 の輝度し
か得られず、最高輝度も2000cd/m2 と低い特性と
なってしまった。
In this device, although light emission from Ir (ppy) 3 can be confirmed, poly (9,9-dioctylfluorene)
Light emission from the exciplex with [Poly (9,9-diocthylfluorene)] became dominant. For this reason, only a luminance of 100 cd / m 2 was obtained at a current density of 10 mA / cm 2 , and the maximum luminance was a low characteristic of 2000 cd / m 2 .

【0102】<比較例2>PEDOTの成膜までは実施
例1と同様の手順で行った。
<Comparative Example 2> The same procedure as in Example 1 was performed up to the formation of PEDOT.

【0103】発光層として、ポリ(2−メトキシ、5−
(2’−エチル−へクサオキシ)ー1,4−フェニレン
ビニレン)〔Poly(2-methoxy,5-(2'-ethyl-hexoxy)-1,4
-phenylenevinylene(MEH-PPV)〕を使用し、Ir(ppy)3 を
1 mol%の濃度で添加した。溶液にはキシレンを使用
し、スピンコート法により100nm成膜した。
As the light emitting layer, poly (2-methoxy, 5-
(2′-ethyl-hexaoxy) -1,4-phenylenevinylene) [Poly (2-methoxy, 5- (2′-ethyl-hexoxy) -1,4
-phenylenevinylene (MEH-PPV)], and Ir (ppy) 3 was added at a concentration of 1 mol%. Xylene was used for the solution, and a film was formed to a thickness of 100 nm by spin coating.

【0104】次いで、基板を真空装置内に固定し、層内
を1×10-4 Pa以下まで減圧した後、LiFを0.5n
m、次いでAlを100nm蒸着し、電子注入電極および
補助電極の陰極とした。
Next, the substrate was fixed in a vacuum device, and the pressure in the layer was reduced to 1 × 10 −4 Pa or less.
m, and then Al was deposited to a thickness of 100 nm to form a cathode for an electron injection electrode and an auxiliary electrode.

【0105】最後にガラス封止をして有機EL表示装置
を得た。
Finally, glass sealing was performed to obtain an organic EL display device.

【0106】この素子では、MEH-PPVのバンドギャップ
が低いことから、Ir(ppy)3 へエネルギー移動が起こら
ず、Ir(ppy)3 からの発光は確認できなかった。また、
ELスペクトルは、MEH-PPVからのものでもなく、MEH-P
PVとIr(ppy)3 とのエキサイプレックスからの発光であ
った。このため、10mA/cm2 の電流密度で40cd/m2
の輝度しか得られず、最高輝度も250cd/m2 と低い
特性となってしまった。
In this device, since the band gap of MEH-PPV was low, energy transfer did not occur to Ir (ppy) 3, and light emission from Ir (ppy) 3 could not be confirmed. Also,
The EL spectra were not from MEH-PPV,
Light was emitted from the exciplex of PV and Ir (ppy) 3. Therefore, at a current density of 10 mA / cm 2 , 40 cd / m 2
, And the highest luminance was as low as 250 cd / m 2 .

【0107】<比較例3>Ir(ppy)3 の代わりに、クマ
リン6〔Coumaline6〕をドーピング材料に用いた他は実
施例1と同様にしてEL素子を作成した。
Comparative Example 3 An EL device was prepared in the same manner as in Example 1, except that Coumaline 6 was used as a doping material instead of Ir (ppy) 3.

【0108】この素子の特性は、10mA/cm2 の電流密
度で60cd/m2 の輝度しか得られず、最高輝度も30
00cd/m2 と低い特性となり、Ir(ppy)3 を用いた素子
と比べると、1/30以下になってしまった。
The characteristics of this device are such that a luminance of only 60 cd / m 2 can be obtained at a current density of 10 mA / cm 2 and a maximum luminance of 30 cd / m 2.
The characteristics were as low as 00 cd / m 2, which was 1/30 or less as compared with the device using Ir (ppy) 3.

【0109】[0109]

【発明の効果】以上のように本発明によれば、三重項発
光材料を高分子材料、特に非共役高分子中にドーピング
することにより、熱安定性等の信頼性、高輝度領域での
高効率化を同時に可能とする有機EL素子を実現するこ
とができる。
As described above, according to the present invention, by doping a triplet light emitting material into a polymer material, particularly a non-conjugated polymer, reliability such as thermal stability and high reliability in a high brightness region can be obtained. It is possible to realize an organic EL element that can simultaneously increase the efficiency.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の有機EL素子の基本構造を示す概略断
面図である。
FIG. 1 is a schematic sectional view showing a basic structure of an organic EL device of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 ホール注入電極(陽電極) 3 電極界面改質層 4 発光層 5 電子注入電極(陰電極) DESCRIPTION OF SYMBOLS 1 Substrate 2 Hole injection electrode (positive electrode) 3 Electrode interface modification layer 4 Light emitting layer 5 Electron injection electrode (negative electrode)

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB02 AB03 AB14 CA01 CB01 DA01 DB03 DC00 EB00 5F041 CA45 CA47 CA91  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB02 AB03 AB14 CA01 CB01 DA01 DB03 DC00 EB00 5F041 CA45 CA47 CA91

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 ホール注入電極と、電子注入電極と、こ
れらの電極間に有機ホスト材料とドーパントからなる発
光層を有し、 前記有機材料が非共役高分子材料であり、 前記ドーパントは3重項状態からの燐光発光が可能な有
機金属錯体であり、少なくともメンデレエフ周期律表の
VIII族に属する金属イオンを含有する有機EL素子。
1. An electron injection electrode, an electron injection electrode, and a light emitting layer including an organic host material and a dopant between these electrodes, wherein the organic material is a non-conjugated polymer material, and the dopant is a triple layer. Is an organometallic complex capable of emitting phosphorescence from the term state, at least in the Mendeleev periodic table.
An organic EL device containing a metal ion belonging to Group VIII.
【請求項2】 前記ホスト材料は、カルバゾール基を有
する請求項1の有機EL素子。
2. The organic EL device according to claim 1, wherein the host material has a carbazole group.
【請求項3】 前記有機ホスト材料がホール輸送性を有
する請求項1または2の有機EL素子。
3. The organic EL device according to claim 1, wherein the organic host material has a hole transporting property.
【請求項4】 前記金属イオンは、イリジウム、あるい
は白金である請求項1〜3のいずれかの有機EL素子。
4. The organic EL device according to claim 1, wherein said metal ion is iridium or platinum.
【請求項5】 前記有機ホスト材料のエネルギーギャッ
プ(Eg)が2.4eV以上である請求項1〜4のいずれか
の有機EL素子。
5. The organic EL device according to claim 1, wherein the energy gap (Eg) of the organic host material is 2.4 eV or more.
【請求項6】 前記発光層と一方の電極との間には電極
界面改質層を有する請求項1〜5のいずれかの有機EL
素子。
6. The organic EL according to claim 1, further comprising an electrode interface modification layer between the light emitting layer and one of the electrodes.
element.
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