JP2003065859A - Temperature measuring device and semiconductor manufacturing device - Google Patents
Temperature measuring device and semiconductor manufacturing deviceInfo
- Publication number
- JP2003065859A JP2003065859A JP2001232079A JP2001232079A JP2003065859A JP 2003065859 A JP2003065859 A JP 2003065859A JP 2001232079 A JP2001232079 A JP 2001232079A JP 2001232079 A JP2001232079 A JP 2001232079A JP 2003065859 A JP2003065859 A JP 2003065859A
- Authority
- JP
- Japan
- Prior art keywords
- substrate support
- rod
- shaped body
- temperature
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、被処理基板を加熱
する基板サポート等で用いられる温度測定装置及びその
ような温度測定装置を用いた半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device used for a substrate support or the like for heating a substrate to be processed and a semiconductor manufacturing device using such a temperature measuring device.
【０００２】[0002]
【従来の技術】半導体デバイスの製造プロセスにおいて
は、被処理基板に熱処理を施すことがある。このような
熱処理を施すための半導体製造装置としては、加熱ヒー
タが内蔵された基板サポートを備えたものがある。図３
（ａ）及び図３（ｂ）は、それぞれそのような基板サポ
ートを備えた半導体製造装置の構成を示す概略図であ
る。2. Description of the Related Art In a semiconductor device manufacturing process, a substrate to be processed is sometimes subjected to heat treatment. As a semiconductor manufacturing apparatus for performing such heat treatment, there is an apparatus including a substrate support having a heater built therein. Figure 3
3A and 3B are schematic views showing the configuration of a semiconductor manufacturing apparatus provided with such a substrate support.
【０００３】図示するように、半導体製造装置１は、所
定の真空度に減圧される真空チャンバ２を有しており、
この真空チャンバ２内には基板支持装置３が設置されて
いる。基板支持装置３は、上面に被処理基板である半導
体ウェハＷが載置されるセラミック製の基板サポート３
ａと、基板サポート３ａを支持するステンレス製のステ
ージ３ｂと、両者間に配置されて熱を絶縁する絶縁プレ
ート３ｃと、基板サポート３ａ内に埋設され、基板サポ
ート３ａを加熱する加熱ヒータ３ｄとから構成されてい
る。As shown in the figure, the semiconductor manufacturing apparatus 1 has a vacuum chamber 2 whose pressure is reduced to a predetermined degree of vacuum.
A substrate support device 3 is installed in the vacuum chamber 2. The substrate supporting device 3 is a ceramic substrate support 3 on which a semiconductor wafer W, which is a substrate to be processed, is placed on the upper surface.
a, a stainless steel stage 3b supporting the substrate support 3a, an insulating plate 3c arranged between the two to insulate heat, and a heater 3d embedded in the substrate support 3a for heating the substrate support 3a. It is configured.
【０００４】このような半導体製造装置１においては、
熱処理後の半導体ウェハＷの品質が基板サポート３ａの
温度に大きく左右されるため、基板サポート３ａ自体の
温度を正確に測定して高精度の温度管理を行う必要があ
る。一般に、基板サポート３ａの温度の測定には、熱電
対が用いられる。熱電対としては、図３（ａ）に示す熱
電対４や図３（ｂ）に示す熱電対５のようなものがあ
る。In such a semiconductor manufacturing apparatus 1,
Since the quality of the semiconductor wafer W after the heat treatment largely depends on the temperature of the substrate support 3a, it is necessary to accurately measure the temperature of the substrate support 3a itself to perform highly accurate temperature control. Generally, a thermocouple is used to measure the temperature of the substrate support 3a. As the thermocouple, there are the thermocouple 4 shown in FIG. 3A and the thermocouple 5 shown in FIG. 3B.
【０００５】図３（ａ）に示すように、熱電対４は、一
方の端部に熱電対プローブが設けられた側温部材４ａ
と、真空チャンバ２の壁面に気密に固定された熱電対導
入端子４ｂと、測温部材４ａと熱電対導入端子４ｂとを
接続するケーブル４ｃとから構成されている。測温部材
４ａは、絶縁プレート３ｃに設けられた貫通孔を貫通し
て、熱電対プローブが設けられた端部が基板サポート３
ａの下面に接触するように、ステージ３ｂに取り付けら
れている。熱伝対導入端子４ｂには、真空チャンバ２外
に設けられた、温度保証回路が内蔵された計測器６が接
続されている。As shown in FIG. 3A, the thermocouple 4 has a side temperature member 4a having a thermocouple probe at one end thereof.
And a thermocouple introduction terminal 4b that is airtightly fixed to the wall surface of the vacuum chamber 2, and a cable 4c that connects the temperature measuring member 4a and the thermocouple introduction terminal 4b. The temperature measuring member 4a passes through a through hole provided in the insulating plate 3c, and the end portion provided with the thermocouple probe has the substrate support 3 at its end.
It is attached to the stage 3b so as to contact the lower surface of a. The thermocouple introduction terminal 4b is connected to a measuring instrument 6 provided outside the vacuum chamber 2 and having a built-in temperature assurance circuit.
【０００６】熱電対５は、図３（ｂ）に示すように、一
方の端部に熱電対プローブが設けられ、他方の端部に上
述したような計測器が接続された丸棒状のものである。
熱電対５は、ステージ３ｂ及び絶縁プレート３ｃに設け
られた貫通孔を貫通して、熱電対プローブが設けられた
端部が基板サポート３ａの下面に接触するように、真空
チャンバ２の壁面に気密に固定されている。As shown in FIG. 3 (b), the thermocouple 5 is a round bar having a thermocouple probe at one end and the above-mentioned measuring instrument connected to the other end. is there.
The thermocouple 5 penetrates through holes provided in the stage 3b and the insulating plate 3c, and is hermetically sealed on the wall surface of the vacuum chamber 2 so that the end portion provided with the thermocouple probe contacts the lower surface of the substrate support 3a. It is fixed to.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、熱電対
４にあっては、ケーブル４ｃが真空チャンバ２内にある
ため、ケーブル４ｃの取り回し等、取り付けの際の作業
は手間がかかるものであった。However, in the thermocouple 4, since the cable 4c is in the vacuum chamber 2, the work of mounting the cable 4c, such as arranging the cable 4c, is troublesome.
【０００８】また、熱電対５にあっては、基板サポート
３ａが加熱ヒータ３ｄにより加熱されて熱膨張するた
め、熱電対５の熱電対プローブが設けられた端部と基板
サポート３ａの下面との接触が不十分となり、基板サポ
ート３ａ自体の温度が正確に測定されない恐れがあっ
た。Further, in the thermocouple 5, since the substrate support 3a is heated by the heater 3d and thermally expanded, the end of the thermocouple 5 where the thermocouple probe is provided and the lower surface of the substrate support 3a. The contact may be insufficient, and the temperature of the substrate support 3a itself may not be accurately measured.
【０００９】そこで、本発明は、このような事情に鑑み
てなされたものであり、取り付けの際の作業における手
間を低減すると共に、被測定物の温度を正確に測定する
ことのできる温度測定装置及びそのような温度測定装置
を用いた半導体製造装置を提供することを目的とする。Therefore, the present invention has been made in view of such circumstances, and a temperature measuring device capable of reducing the labor in the work of mounting and accurately measuring the temperature of the object to be measured. Another object of the present invention is to provide a semiconductor manufacturing apparatus using such a temperature measuring device.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る温度測定装置は、一方の端部に温度検
出素子が設けられた棒状体と、棒状体をその長手方向に
おいて前記端部の側に付勢する付勢手段とを備えたこと
を特徴としている。In order to achieve the above object, a temperature measuring device according to the present invention comprises a rod-shaped body provided with a temperature detecting element at one end, and the rod-shaped body in the longitudinal direction thereof. And an urging means for urging the end portion side.
【００１１】棒状体の温度検出素子が設けられた端部が
付勢手段により、温度が測定される被測定部材に押し付
けられ、十分な接触が保持される。これにより、被測定
物の温度を正確に測定することが可能となる。The end portion of the rod-shaped body provided with the temperature detecting element is pressed against the member to be measured whose temperature is to be measured by the biasing means, and sufficient contact is maintained. This makes it possible to accurately measure the temperature of the object to be measured.
【００１２】また、付勢手段はベローズであり、ベロー
ズは、一端が棒状体に気密に取り付けられ、棒状体を囲
んでいることが好ましい。請求項４に記載するように、
真空チャンバと、真空チャンバ内に設置されたステージ
と、ステージに取り付けられた基板サポートとを備えた
半導体製造装置に、付勢手段としてベローズを用いた温
度測定装置を取り付ければ、真空チャンバ内の減圧によ
る外部との圧力差によってベローズが変形し、棒状体の
温度検出素子が設けられた端部が基板サポートに押し付
けられる。したがって、棒状体の前記端部と基板サポー
トとの十分な接触が保持され、基板サポート自体の温度
を正確に測定することができる。また、真空チャンバ内
においてケーブル等が用いられることがないため、取り
付けの際の作業が容易となる。Further, it is preferable that the urging means is a bellows, and one end of the bellows is airtightly attached to the rod-shaped body and surrounds the rod-shaped body. As described in claim 4,
If a temperature measuring device using a bellows as an urging means is attached to a semiconductor manufacturing apparatus equipped with a vacuum chamber, a stage installed in the vacuum chamber, and a substrate support attached to the stage, the pressure in the vacuum chamber is reduced. The bellows is deformed by the pressure difference with the outside due to, and the end of the rod-shaped body provided with the temperature detecting element is pressed against the substrate support. Therefore, sufficient contact between the end of the rod-shaped body and the substrate support is maintained, and the temperature of the substrate support itself can be accurately measured. Moreover, since a cable or the like is not used in the vacuum chamber, the work at the time of mounting becomes easy.
【００１３】また、温度検出素子としては熱電対プロー
ブが一般的である。A thermocouple probe is generally used as the temperature detecting element.
【００１４】また、上述したような半導体製造装置に
は、基板サポートを加熱するための加熱手段が基板サポ
ート内に埋設されているものがある。このような半導体
製造装置において、基板サポートが加熱手段により加熱
されて熱膨張しても、棒状体の温度検出素子が設けられ
た端部がベローズにより付勢され基板サポートに押し付
けられているため、棒状体の前記端部と基板サポートと
の十分な接触が保持される。In some semiconductor manufacturing apparatuses as described above, heating means for heating the substrate support is embedded in the substrate support. In such a semiconductor manufacturing apparatus, even if the substrate support is heated by the heating means and thermally expanded, the end portion provided with the temperature detecting element of the rod-shaped body is urged by the bellows and pressed against the substrate support. Sufficient contact between the end of the rod and the substrate support is maintained.
【００１５】また、基板サポートには、棒状体の温度検
出素子が設けられた端部が挿入される凹部が形成されて
いることが好ましい。基板サポートに形成された凹部に
棒状体の前記端部を挿入すれば、凹部の内壁面から放射
される放射熱を受けることにより基板サポート自体の温
度を正確に測定することができるからである。Further, it is preferable that the substrate support is formed with a concave portion into which the end portion provided with the rod-shaped temperature detecting element is inserted. This is because if the end of the rod-shaped body is inserted into the recess formed in the substrate support, the temperature of the substrate support itself can be accurately measured by receiving the radiant heat radiated from the inner wall surface of the recess.
【００１６】[0016]
【発明の実施の形態】以下、図面と共に本発明の好適な
一実施形態について詳細に説明する。なお、本明細書に
おいて、「上」、「下」等の語は、図面に示す状態に基
づいており、便宜的なものである。また、図面の説明に
おいては同一要素には同一符号を付し、重複する説明を
省略する。BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described in detail below with reference to the drawings. In this specification, terms such as “upper” and “lower” are based on the state shown in the drawings and are for convenience. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.
【００１７】図１は、本発明の一実施形態に係る半導体
製造装置１０の構成を示す概略図であり、図２は、図１
の半導体製造装置１０に取り付けられた本発明の一実施
形態に係る温度測定装置１２の構成を示す概略図であ
る。半導体製造装置１０は、例えば熱ＣＶＤ装置等であ
り、図１に示すように、所定の真空度に減圧される真空
チャンバ１４を有している。この真空チャンバ１４内に
は、被処理基板である半導体ウェハＷを支持するための
基板支持装置１６が設置されている。FIG. 1 is a schematic diagram showing the structure of a semiconductor manufacturing apparatus 10 according to an embodiment of the present invention, and FIG.
It is a schematic diagram showing the composition of temperature measuring device 12 concerning one embodiment of the present invention attached to semiconductor manufacturing device 10 of. The semiconductor manufacturing apparatus 10 is, for example, a thermal CVD apparatus, and has a vacuum chamber 14 whose pressure is reduced to a predetermined degree of vacuum, as shown in FIG. In the vacuum chamber 14, a substrate supporting device 16 for supporting the semiconductor wafer W which is the substrate to be processed is installed.
【００１８】基板支持装置１６は、上面に被処理基板で
ある半導体ウェハＷが載置されるセラミック製の基板サ
ポート１８と、基板サポート１８を支持するステンレス
製のステージ２０と、基板サポート１８とステージ２０
との間に配置され、ＳｉＯ2等の熱的絶縁性に優れた材
料からなる絶縁プレート２２と、基板サポート１８内に
埋設され、基板サポート１８を加熱する加熱ヒータ２３
（加熱手段）とを備えて構成されている。ステージ２０
からは、筒状部２４が下方に向かって延びており、筒状
部２４の下端は、真空チャンバ１４の底部に形成された
開口部２６を囲んで真空チャンバ１４の底面に気密に固
定されている。The substrate support device 16 includes a ceramic substrate support 18 on which a semiconductor wafer W, which is a substrate to be processed, is mounted, a stainless steel stage 20 for supporting the substrate support 18, the substrate support 18, and the stage. 20
And an insulating plate 22 made of a material having excellent thermal insulation such as SiO 2 and a heater 23 embedded in the substrate support 18 for heating the substrate support 18.
(Heating means). Stage 20
From the above, the tubular portion 24 extends downward, and the lower end of the tubular portion 24 is airtightly fixed to the bottom surface of the vacuum chamber 14 so as to surround the opening 26 formed in the bottom portion of the vacuum chamber 14. There is.
【００１９】図２に示すように、基板サポート１８の下
面には、凹部２８が形成されている。また、絶縁プレー
ト２２の、基板サポート１８の下面に形成された凹部２
８に対向する位置には、貫通孔３０が形成されている。
さらに、ステージ２０の上面の、凹部２８に対向する位
置には、凹部３２が形成されている。この凹部３２の底
部には、貫通孔３４が形成されている。As shown in FIG. 2, a recess 28 is formed on the lower surface of the substrate support 18. In addition, the recess 2 formed on the lower surface of the substrate support 18 of the insulating plate 22.
A through hole 30 is formed at a position opposed to 8.
Further, a recess 32 is formed on the upper surface of the stage 20 at a position facing the recess 28. A through hole 34 is formed in the bottom of the recess 32.
【００２０】温度測定装置１２は、上下方向に延びる丸
棒状の棒状体３６を有している。棒状体３６は金属性で
あり、その上端部には温度検出素子である熱電対プロー
ブ３７が内蔵されている。この熱電対プローブ３７は、
棒状体３６の内部を通るリード線３９を介して、温度補
償回路が内蔵された計測器３８に接続されている。棒状
体３６の上端部は、基板サポート１８の下面に形成され
た凹部２８に挿入され、その上端は、凹部２８の底面に
接触している。棒状体３６と凹部２８の内壁面との間に
は、所定の大きさの間隙４０が形成されている。また、
棒状体３６の下端は、ステージ２０の凹部３２の底部に
形成された貫通孔３４を貫通し、半導体製造装置１０の
外部に突出している。なお、棒状体３６の上端部の形状
を半球状とすれば、経年変形を減少させ耐久性を向上さ
せることができると共に、被測定物との接触面積が一定
となり、被測定物の温度を正確に測定することが可能と
なる。The temperature measuring device 12 has a rod-shaped body 36 in the shape of a round rod extending in the vertical direction. The rod-shaped body 36 is made of metal, and a thermocouple probe 37, which is a temperature detecting element, is built in the upper end portion thereof. This thermocouple probe 37
A lead wire 39 passing through the inside of the rod-shaped body 36 is connected to a measuring instrument 38 having a built-in temperature compensation circuit. The upper end of the rod-shaped body 36 is inserted into the recess 28 formed in the lower surface of the substrate support 18, and the upper end thereof is in contact with the bottom surface of the recess 28. A gap 40 having a predetermined size is formed between the rod-shaped body 36 and the inner wall surface of the recess 28. Also,
The lower end of the rod-shaped body 36 penetrates a through hole 34 formed in the bottom of the recess 32 of the stage 20 and projects to the outside of the semiconductor manufacturing apparatus 10. If the shape of the upper end of the rod-shaped body 36 is hemispherical, it is possible to reduce aging deformation and improve durability, and the contact area with the object to be measured becomes constant, so that the temperature of the object to be measured can be accurately measured. It becomes possible to measure.
【００２１】棒状体３６には、その周囲を囲んで、円筒
状の筒状体４２が気密に固定されている。筒状体４２の
上端には、円板状のフランジ部４４が一体的に形成され
ている。フランジ部４４の上面と棒状体３６の上端との
上下方向に沿った距離は、基板サポート１８の下面に形
成された凹部２８の深さよりも大きくなっている。ま
た、筒状体４２の下端は、ステージ２０の凹部３２の底
部に形成された貫通孔３４を貫通しており、筒状体４２
と貫通孔３４の内壁面との間には、所定の大きさの間隙
４６が形成されている。A cylindrical tubular body 42 is airtightly fixed to the rod-shaped body 36 so as to surround the periphery thereof. A disc-shaped flange portion 44 is integrally formed at the upper end of the tubular body 42. The vertical distance between the upper surface of the flange portion 44 and the upper end of the rod-shaped body 36 is larger than the depth of the recess 28 formed in the lower surface of the substrate support 18. Further, the lower end of the tubular body 42 penetrates the through hole 34 formed in the bottom portion of the recess 32 of the stage 20, and the tubular body 42
A gap 46 having a predetermined size is formed between the and the inner wall surface of the through hole 34.
【００２２】ステージ２０の凹部３２内には、棒状体３
６の周囲を囲んで、付勢手段であるベローズ４８が配置
されている。ベローズ４８の上端は、筒状体４２のフラ
ンジ部４４の下面に気密に取り付けられ、また、下端
は、ステージ２０の凹部３２の底部に形成された貫通孔
３４の周囲を囲んで、凹部３２の底面に気密に取り付け
られている。In the recess 32 of the stage 20, the rod-shaped body 3
A bellows 48, which is a biasing means, is arranged around the circumference of 6. The upper end of the bellows 48 is airtightly attached to the lower surface of the flange portion 44 of the tubular body 42, and the lower end surrounds the through hole 34 formed in the bottom portion of the recess 32 of the stage 20 to surround the recess 32. It is attached to the bottom airtightly.
【００２３】以上のように構成された半導体製造装置１
０及び温度測定装置１２によれば、温度測定装置１２に
おいては筒状体４２が棒状体３６に気密に固定されてお
り、また、筒状体４２とステージ２０との間はベローズ
４８により気密性が保持させているため、真空チャンバ
１４内の気密性が破られることはない。したがって、真
空チャンバ１４内を所定の真空度に減圧すると、真空チ
ャンバ１４内の減圧による外部との圧力差によってベロ
ーズ４８が上方に向かって伸び、棒状体３６の上端が、
基板サポート１８の下面に形成された凹部２８の底面に
押し付けられる。これにより、基板サポート１８が加熱
ヒータ２３により加熱されて熱膨張しても、棒状体３６
の上端と基板サポート１８との十分な接触が保持され
る。Semiconductor manufacturing apparatus 1 configured as described above
0 and the temperature measuring device 12, in the temperature measuring device 12, the cylindrical body 42 is airtightly fixed to the rod-shaped body 36, and the space between the cylindrical body 42 and the stage 20 is sealed by the bellows 48. The airtightness in the vacuum chamber 14 is not broken because it is held by. Therefore, when the inside of the vacuum chamber 14 is depressurized to a predetermined degree of vacuum, the bellows 48 extends upward due to the pressure difference between the vacuum chamber 14 and the outside, and the upper end of the rod-shaped body 36 becomes
It is pressed against the bottom surface of the recess 28 formed on the lower surface of the substrate support 18. As a result, even if the substrate support 18 is heated by the heater 23 and thermally expanded, the rod-shaped body 36
Sufficient contact between the upper edge of the substrate and the substrate support 18 is maintained.
【００２４】さらに、このとき、温度測定装置１２は、
間隙４０により基板サポート１８に対して、また、間隙
４６によりステージ２０に対して、それぞれ３次元的な
動作が可能となっているため、基板サポート１８とステ
ージ２０との熱膨張差を吸収することができ、温度測定
装置１２等にストレスが生じることもなく温度測定装置
１２等の破損を防止することが可能となる。Further, at this time, the temperature measuring device 12 is
The gap 40 allows the substrate support 18 and the gap 46 to perform the three-dimensional operation with respect to the stage 20, respectively. Therefore, the difference in thermal expansion between the substrate support 18 and the stage 20 can be absorbed. Therefore, it is possible to prevent the temperature measuring device 12 and the like from being damaged without causing stress to the temperature measuring device 12 and the like.
【００２５】また、棒状体３６の熱電対プローブ３７が
内蔵された上端部は、基板サポート１８の下面に形成さ
れた凹部２８に挿入されているため、凹部２８の内壁面
から放射される放射熱を受けることにより、基板サポー
ト１８自体の温度を正確に測定することが可能となる。Further, since the upper end of the rod-shaped body 36 in which the thermocouple probe 37 is incorporated is inserted into the recess 28 formed in the lower surface of the substrate support 18, the radiant heat radiated from the inner wall surface of the recess 28 is radiated. By receiving the temperature, the temperature of the substrate support 18 itself can be accurately measured.
【００２６】次に、基板支持装置１６の組み立てについ
て説明する。絶縁プレート２２上に基板サポート１８を
設置する前の状態において、絶縁プレート２２に形成さ
れた貫通孔３０から、ステージ２０に形成された凹部３
２内に温度測定装置１２を設置する。そして、温度測定
装置１２の棒状体３６の上端部が基板サポート１８の下
面に設けられた凹部２８に挿入されるように、基板サポ
ート１８を絶縁プレート２２上に設置する。Next, the assembly of the substrate support device 16 will be described. In a state before the substrate support 18 is installed on the insulating plate 22, the recess 3 formed on the stage 20 through the through hole 30 formed on the insulating plate 22.
A temperature measuring device 12 is installed in the unit 2. Then, the substrate support 18 is installed on the insulating plate 22 so that the upper end of the rod-shaped body 36 of the temperature measuring device 12 is inserted into the recess 28 provided on the lower surface of the substrate support 18.
【００２７】このように、ケーブル等が用いられること
がないため、取り付けの際の作業が容易となる。また、
上述したように温度測定装置１２は、基板サポート１８
及びステージ２０に対して、３次元的な動作が可能とな
っているため、絶縁プレート２２上に基板サポート１８
を設置する際のシビアな位置合わせが不要となる。As described above, since no cable or the like is used, the work for mounting becomes easy. Also,
As described above, the temperature measuring device 12 includes the substrate support 18
Since the three-dimensional operation is possible with respect to the stage 20 and the stage 20, the substrate support 18 is placed on the insulating plate 22.
There is no need for severe alignment when installing the.
【００２８】以上、本発明の好適な一実施形態について
詳細に説明したが、本発明は上記実施形態に限定されな
いことはいうまでもない。Although a preferred embodiment of the present invention has been described in detail above, it goes without saying that the present invention is not limited to the above embodiment.
【００２９】上記実施形態では、付勢手段としてベロー
ズを用いたが、本発明に係る温度測定装置における付勢
手段としては、コイルばねを用いてもよい。温度測定装
置が取り付けられる部材において、外部との気密性を保
持する必要のない場合に特に有効である。Although the bellows is used as the biasing means in the above embodiment, a coil spring may be used as the biasing means in the temperature measuring device according to the present invention. It is particularly effective when the member to which the temperature measuring device is attached does not need to maintain airtightness with the outside.
【００３０】また、上記実施形態では、加熱ヒータが内
蔵された基板サポートの温度を測定する場合について説
明したが、本発明に係る温度測定装置は、ハロゲンラン
プ等の加熱ランプにより加熱される基板サポートの温度
を測定するような場合にも適用可能である。また、本発
明に係る温度測定装置は、半導体製造装置における基板
サポートの温度を測定する場合に限られず、種々の部材
の温度を測定する場合においても適用可能である。Further, in the above embodiment, the case where the temperature of the substrate support having the built-in heater is measured has been described. However, the temperature measuring device according to the present invention is a substrate support heated by a heating lamp such as a halogen lamp. It is also applicable to the case of measuring the temperature of. Further, the temperature measuring device according to the present invention is not limited to the case of measuring the temperature of the substrate support in the semiconductor manufacturing device, but can be applied to the case of measuring the temperature of various members.
【００３１】[0031]
【発明の効果】以上説明したように、本発明によれば、
棒状体の温度検出素子が設けられた端部が付勢手段によ
り、温度が測定される被測定部材に押し付けられるた
め、被測定部材が熱膨張等により変形しても、十分な接
触が保持される。これにより、被測定物の温度を正確に
測定することが可能となる。As described above, according to the present invention,
Since the end portion of the rod-shaped body provided with the temperature detecting element is pressed against the member to be measured whose temperature is to be measured by the biasing means, sufficient contact is maintained even if the member to be measured is deformed due to thermal expansion or the like. It This makes it possible to accurately measure the temperature of the object to be measured.
【００３２】また、真空チャンバと、真空チャンバ内に
設置されたステージと、ステージに取り付けられた基板
サポートとを備えた半導体製造装置に、付勢手段として
ベローズを用いた温度測定装置を取り付ければ、真空チ
ャンバ内の減圧による外部との圧力差によってベローズ
が変形し、棒状体の温度検出素子が設けられた端部が基
板サポートに押し付けられる。したがって、棒状体の前
記端部と基板サポートとの十分な接触が保持され、基板
サポート自体の温度を正確に測定することができる。ま
た、真空チャンバ内においてケーブル等が用いられるこ
とがないため、取り付けの際の作業が容易となり、作業
時間を短縮することができる。If a temperature measuring device using a bellows as an urging means is attached to a semiconductor manufacturing apparatus provided with a vacuum chamber, a stage installed in the vacuum chamber, and a substrate support attached to the stage, The bellows is deformed by the pressure difference between the outside and the outside due to the pressure reduction in the vacuum chamber, and the end portion of the rod-shaped body provided with the temperature detecting element is pressed against the substrate support. Therefore, sufficient contact between the end of the rod-shaped body and the substrate support is maintained, and the temperature of the substrate support itself can be accurately measured. Further, since no cable or the like is used in the vacuum chamber, the work at the time of attachment becomes easy and the work time can be shortened.
【図１】半導体製造装置の構成を示す概略図である。FIG. 1 is a schematic diagram showing a configuration of a semiconductor manufacturing apparatus.
【図２】図１の半導体製造装置に取り付けられた温度測
定装置の構成を示す概略図である。FIG. 2 is a schematic diagram showing a configuration of a temperature measuring device attached to the semiconductor manufacturing apparatus of FIG.
【図３】（ａ）及び（ｂ）は、それぞれ従来の半導体製
造装置の構成を示す概略図である。3A and 3B are schematic diagrams showing a configuration of a conventional semiconductor manufacturing apparatus, respectively.
１０…半導体製造装置、１２…温度測定装置、１４…真
空チャンバ、１８…基板サポート、２０…ステージ、３
４…貫通孔、３６…棒状体、４８…ベローズ。10 ... Semiconductor manufacturing apparatus, 12 ... Temperature measuring apparatus, 14 ... Vacuum chamber, 18 ... Substrate support, 20 ... Stage, 3
4 ... through hole, 36 ... rod-shaped body, 48 ... bellows.
フロントページの続き (72)発明者 小野 真徳 千葉県成田市新泉14−３野毛平工業団地内 アプライド マテリアルズ ジャパン 株式会社内 Ｆターム(参考） 2F056 CA02 CA15 4M106 AA01 CA70 DH02 DH15 DJ02Continued front page (72) Inventor Masanori Ono 14-3 Shinsen, Narita-shi, Chiba Nogedaira Industrial Park Applied Materials Japan Within the corporation F-term (reference) 2F056 CA02 CA15 4M106 AA01 CA70 DH02 DH15 DJ02
Claims (6)
棒状体と、 前記棒状体をその長手方向において前記端部の側に付勢
する付勢手段とを備えたことを特徴とする温度測定装
置。1. A rod-shaped body having a temperature detection element provided at one end thereof, and a biasing means for biasing the rod-shaped body toward the end side in the longitudinal direction thereof. Temperature measuring device.
ることを特徴とする請求項１に記載の温度測定装置。2. The temperature measuring device according to claim 1, wherein the temperature detecting element is a thermocouple probe.
れ、前記棒状体を囲んでいることを特徴とする請求項１
又は２に記載の温度測定装置。3. The urging means is a bellows, and one end of the bellows is airtightly attached to the rod-shaped body and surrounds the rod-shaped body.
Or the temperature measuring device according to 2.
設置されたステージと、前記ステージに取り付けられた
基板サポートとを備えた半導体製造装置であって、 一方の端部に温度検出素子が設けられ、前記一方の端部
が前記基板サポートに接触し、他方の端部が前記ステー
ジに設けられた貫通孔を貫通している棒状体と、 一端が前記棒状体に気密に取り付けられると共に、他端
が前記ステージの前記貫通孔の周囲に気密に取り付けら
れ、前記棒状体を囲んでいるベローズとを備えたことを
特徴とする半導体製造装置。4. A semiconductor manufacturing apparatus comprising a vacuum chamber, a stage installed in the vacuum chamber, and a substrate support attached to the stage, wherein a temperature detection element is provided at one end. A rod-shaped body having one end in contact with the substrate support and the other end penetrating a through hole provided in the stage; one end being airtightly attached to the rod-shaped body and the other end And a bellows which is airtightly attached around the through hole of the stage and surrounds the rod-shaped body.
ートを加熱するための加熱手段が埋設されていることを
特徴とする請求項４に記載の半導体製造装置。5. The semiconductor manufacturing apparatus according to claim 4, wherein heating means for heating the substrate support is embedded in the substrate support.
記一方の端部が挿入される凹部が形成されていることを
特徴とする請求項４又は５に記載の半導体製造装置。6. The semiconductor manufacturing apparatus according to claim 4, wherein the substrate support is provided with a recess into which the one end of the rod-shaped body is inserted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001232079A JP3603059B2 (en) | 2001-07-31 | 2001-07-31 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001232079A JP3603059B2 (en) | 2001-07-31 | 2001-07-31 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003065859A true JP2003065859A (en) | 2003-03-05 |
| JP3603059B2 JP3603059B2 (en) | 2004-12-15 |
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ID=19064050
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001232079A Expired - Fee Related JP3603059B2 (en) | 2001-07-31 | 2001-07-31 | Semiconductor manufacturing equipment |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006059453A1 (en) * | 2004-12-03 | 2006-06-08 | Shin-Etsu Handotai Co., Ltd. | Molten metal leak detector in single crystal lift mechanism and single crystal lift mechanism and molten metal leak detecting method |
| JP2009042070A (en) * | 2007-08-09 | 2009-02-26 | Sei Hybrid Kk | Temperature measuring device for semiconductor manufacturing device, and semiconductor manufacturing device loaded therewith |
| WO2017195896A1 (en) * | 2016-05-13 | 2017-11-16 | 株式会社エンプラス | Socket for electrical component |
-
2001
- 2001-07-31 JP JP2001232079A patent/JP3603059B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006059453A1 (en) * | 2004-12-03 | 2006-06-08 | Shin-Etsu Handotai Co., Ltd. | Molten metal leak detector in single crystal lift mechanism and single crystal lift mechanism and molten metal leak detecting method |
| JP2009042070A (en) * | 2007-08-09 | 2009-02-26 | Sei Hybrid Kk | Temperature measuring device for semiconductor manufacturing device, and semiconductor manufacturing device loaded therewith |
| WO2017195896A1 (en) * | 2016-05-13 | 2017-11-16 | 株式会社エンプラス | Socket for electrical component |
| KR20190006976A (en) * | 2016-05-13 | 2019-01-21 | 가부시키가이샤 엔프라스 | Socket for electrical parts |
| US10476220B2 (en) | 2016-05-13 | 2019-11-12 | Enplas Corporation | Socket for electrical component |
| KR102406786B1 (en) | 2016-05-13 | 2022-06-10 | 가부시키가이샤 엔프라스 | socket for electrical components |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3603059B2 (en) | 2004-12-15 |
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