JP3874042B2 - Temperature sensor support device - Google Patents

Temperature sensor support device Download PDF

Info

Publication number
JP3874042B2
JP3874042B2 JP27643397A JP27643397A JP3874042B2 JP 3874042 B2 JP3874042 B2 JP 3874042B2 JP 27643397 A JP27643397 A JP 27643397A JP 27643397 A JP27643397 A JP 27643397A JP 3874042 B2 JP3874042 B2 JP 3874042B2
Authority
JP
Japan
Prior art keywords
heating chamber
temperature detection
support
rod
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27643397A
Other languages
Japanese (ja)
Other versions
JPH1197372A (en
Inventor
將司 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP27643397A priority Critical patent/JP3874042B2/en
Publication of JPH1197372A publication Critical patent/JPH1197372A/en
Application granted granted Critical
Publication of JP3874042B2 publication Critical patent/JP3874042B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体製造装置の処理室、或はその他熱処理装置の処理室内の温度を検出する温度センサを支持する為の温度センサの支持装置に関するものである。
【0002】
【従来の技術】
加熱処理を行う処理装置、例えば半導体製造装置の処理室ではシリコンウェーハ等の被処理基板に薄膜を生成、エッチング、或はアニール処理等の熱処理を行うが、処理中の温度は成膜状態、処理状態に大きく影響する。従って、処理室内の所要箇所に温度センサを設置して、処理中の温度を検出すると共に、検出結果を基に温度制御を行っていた。
【0003】
従来処理室内の温度を検出する方法としては、シース熱電対を処理室外部から挿入して検出し、シースが加熱され発光する受光量を検出しているか、或は熱電対をシリコンチップに接着し、該シリコンチップを処理室内の所要箇所に設置し検出している。特に、処理室が気密構造である場合は熱電対の貫通箇所にはハーメチックフランジを用いて気密としている。
【0004】
【発明が解決しようとする課題】
シース熱電対を処理室内に挿入するもので、シースに金属を用いた場合は、急速高温加熱した場合の熱衝撃に弱い。又、半導体を製造する場合では金属汚染の原因となる虞れがある。熱衝撃、金属汚染を考慮しシースをセラミック、又は石英で製作した場合は応答性に欠け、又受光量に問題があり、温度検出の信頼性に欠けるという問題があった。
【0005】
次に、熱電対をシリコンチップに接着するものでは、シリコンチップを処理室内の所定箇所に正確に位置決めする手段がなく、又位置決め後固定する手段もないので所定の位置に正確に設置することが難しい。更に、センサ周辺の影響を受けやすく、設定位置により測定結果にばらつきを生じ、温度検出の再現性に問題があった。
【0006】
本発明は斯かる実情に鑑み、急速加熱した場合の熱衝撃に耐え、更に温度検出の信頼性、再現性を向上させようとするものである。
【0007】
【課題を解決するための手段】
本発明は、被処理基板を表裏両面から加熱する加熱室と、該加熱室に挿入される温度検出ユニットとを具備し、該温度検出ユニットは、熱電対の温度検出端が接着されたセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成した熱処理装置に係るものであり、又被処理基板を表裏両面から加熱する加熱室を有する熱処理装置に用いられ、熱電対の温度検出端が接着されたセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成した温度検出ユニットに係るものであり、更に又被処理基板を表裏両面から加熱する加熱室を有する熱処理装置に用いられ、熱電対の温度検出端が接着されセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成した温度検出ユニットにより前記加熱室の温度を検出する工程と、検出された温度に基づき前記加熱室で被処理基板を加熱する工程とを有する半導体装置の製造方法に係るものである。
【0008】
温度検出センサはユニット化された温度センサの支持装置に支持されるので、取扱が容易であり、保守性が良く、更に温度センサ把持部は可動であり熱膨張差を吸収でき損傷を防止し、センサチップはクランプにより把持した構成であるので着脱も容易であり、又センサチップは表裏両面から光の照射を受けるので、検出温度は加熱室内の加熱状態を反映し、正確な温度測定が可能となる
【0009】
【発明の実施の形態】
以下、図面を参照しつつ本発明の実施の形態を説明する。
【0010】
先ず、図2、図3に於いて、本発明が実施された半導体製造装置の処理室、特に急速高温加熱が行われるランプアニール処理装置について説明する。
【0011】
中央に円形の空間が形成された加熱室壁部1の下端に透明な底板2を介して加熱室底部3が気密に設けられ、前記加熱室壁部1の上端には透明な天板4を介して加熱室天井部5が気密に設けられている。前記加熱室壁部1の空間には円筒状の内壁6が嵌設され、前記底板2、天板4、内壁6により加熱室7が画成される。
【0012】
前記加熱室底部3には前記底板2に対向して反射板8が設けられ、該反射板8と前記底板2との間に図3中紙面に対して垂直な棒状のランプ、例えばハロゲンランプ9が所要間隔で設けられ、下ランプユニット10を構成する。前記加熱室天井部5には前記天板4に対向して反射板12が設けられ、該反射板12と前記天板4との間に図3中紙面に対して垂直な棒状のランプ、例えばハロゲンランプ9が所要間隔で設けられ、上ランプユニット13を構成する。
【0013】
前記加熱室7には前記天板4に対向して上均熱板14が設けられ、前記底板2に対向して下均熱板15が設けられ、該下均熱板15は中央部が刳貫かれ、中央部には回転ステージ16が設けられている。該回転ステージ16は前記加熱室底部3を貫通して下方に延出する支持軸17に支持されると共に該支持軸17を介して回転される様になっている。前記回転ステージ16には被加熱物、例えばウェーハ18が載置可能であり、該ウェーハ18は前記加熱室壁部1に穿設された搬送口19、前記内壁6に穿設された通孔20を通して搬入、搬出され、前記搬送口19はゲート弁21により気密閉塞或は開放可能となっている。
【0014】
前記ウェーハ18の搬入搬出方向と平行に2組の棒状の温度検出ユニット24,25が中心線を挾んで対称な位置に、前記加熱室壁部1を貫通して気密に取付けられ、又前記ウェーハ18の搬入搬出方向と直交し、中心線を挾んで対向して温度検出ユニット26,27が前記加熱室壁部1を貫通して気密に取付けられている。
【0015】
前記温度検出ユニット24,25,26,27の温度検出点はそれぞれの先端に位置し、各温度検出点は加熱室7の中心と同心の円周の4等分した位置に配置される。前記温度検出ユニット24,25,26,27の温度検出結果は適宜目的に合わせて使用され、例えば前記温度検出ユニット24の温度検出結果は温度制御用、温度検出ユニット25の温度検出結果は加温モニタ用、温度検出ユニット26,27の温度検出結果はモニタ用にそれぞれ利用される。
【0016】
前記温度検出ユニット24,25,26,27を説明する。尚、温度検出ユニット24,25,26,27は同一構造であるので、以下は温度検出ユニット25について説明する。
【0017】
固定クランプ30は基部を上下2枚のクランプ保持板31により挾持固着され、前記固定クランプ30に対峙する略L字形状の可動クランプ32は前記クランプ保持板31間に挿入されると共にピン33を介して枢着されている。前記固定クランプ30の内側には前記可動クランプ32側に突出する固定突起34,34が形成されると共に前記固定クランプ30の内側基部には位置決め舌部35が形成されている。前記可動クランプ32の内側先端部には前記固定クランプ30側に突出する可動突起36が突設されると共に可動クランプ32の内側基部には位置決め舌部37が形成され、前記可動クランプ32の角部には受圧部38が突設されている。後述する様に固定クランプ30、可動クランプ32間にセンサチップ40を把持する。
【0018】
前記クランプ保持板31には支持ロッド42の先端が固着され、該支持ロツド42にはスライドパイプ43が摺動自在に嵌合すると共にスプリング44が嵌設されている。前記支持ロッド42にスプリングストッパ45がボルト46により固着され、前記スプリング44は前記スライドパイプ43とスプリングストッパ45間で圧縮状態であり、前記スライドパイプ43を前記クランプ保持板31側に付勢している。
【0019】
前記スライドパイプ43の先端部には駒47が固着され、前記スライドパイプ43は前記駒47を介して前記受圧部38に当接し、前記可動クランプ32は前記ピン33を中心に先端が中心側に付勢されている。前記支持ロッド42の基端部は前記スプリングストッパ45を貫通し、基端部には割りリング48が嵌合され、更に基端部はロッドホルダ49に嵌合し、押し螺子50により固定されている。前記ロッドホルダ49は先端側、基端側にそれぞれフランジ部52,53を有するボビン状であり、先端側は更にボス部54が突出し、該ボス部54に前記支持ロッド42の基部が嵌合する。前記ロッドホルダ49は中空であり、前記ボス部54にはロッド保持孔55が穿設されると共に該ロッド保持孔55の両側に通孔56,56が穿設され、前記ロッド保持孔55、通孔56,56はロッドホルダ49の中空部(図示せず)に連通している。前記フランジ部52の先端面にはOリング溝57が刻設され、該Oリング溝57にはOリング58が嵌設される。
【0020】
前記固定クランプ30、可動クランプ32、支持ロッド42等によりセンサチップ支持部73が構成され、前記ロッドホルダ49、フランジ61によりロッド支持部74が構成され、前記センサチップ40は前記センサチップ支持部73とロッド支持部74とでユニット化された支持装置に着脱可能に支持される。
【0021】
上記した固定クランプ30、クランプ保持板31、可動クランプ32、ピン33、支持ロッド42、スライドパイプ43等前記加熱室7内に露出するものは金属汚染を避ける為石英製となっている。又、前記スプリング44、スプリングストッパ45は金属製であるが、加熱室7の周辺部であり、特に加熱室壁部1の内部に入込んでおり、光の照射を受けないので金属汚染の原因とならない。
【0022】
前記ロッドホルダ49にはフランジ61がOリング62を介在させボルト60により気密に固着される。前記フランジ61の先端面にはOリング溝63が刻設され、該Oリング溝63には前記Oリング62が嵌設される。前記フランジ61には2本の導電線64,65が気密に挿通され、該導電線64,65の両端はフック形状に屈曲されている。
【0023】
前記センサチップ40の中央には熱電対の温度検出端67が埋込まれ接着され、温度センサとして機能する。前記温度検出端67より延びる熱電対素線68,68は石英チューブ69,69で被覆されている。該石英チューブ69で被覆された熱電対素線68,68は前記クランプ保持板31とクランプ保持板31との間隙を挿通し、前記通孔56,56を挿通する。熱電対素線68,68の基端は前記導電線64,65のフック部に螺子70,70によって接続される。
【0024】
前記センサチップ40はクランプ保持板31側の両角部が前記位置決め舌部35、位置決め舌部37にそれぞれ当接し、軸心方向の位置決めがされ、更に前記スプリング44の付勢力により、前記固定突起34,34と可動突起36の3点により適宜な力で把持される。
【0025】
前記加熱室壁部1への取付けは、前記ボス部54より先端側を加熱室7内に挿入し、前記フランジ部52をボルトにより固着する。前記フランジ部52と加熱室7間にはOリング58が介在し、気密となる。
【0026】
前記センサチップ40は前記固定クランプ30、可動クランプ32により把持されることで、前記フランジ部52からの寸法は機械的に決定され、更に所定の高さに保持される。
【0027】
以下、作用を説明する。
【0028】
前記ゲート弁21が開かれ、前記搬送口19を通してウェーハ18が回転ステージ16に載置される。前記ゲート弁21が前記搬送口19を閉鎖し、前記ランプ9、ランプ9が加熱する。加熱中は前記回転ステージ16が回転する。ランプ9、ランプ9は先ず上均熱板14、下均熱板15、回転ステージ16を加熱し、該上均熱板14、下均熱板15、回転ステージ16を介して前記ウェーハ18を加熱する。この為、ランプ9、ランプ9の加熱むらが解消され、前記ウェーハ18は均一に加熱される。
【0029】
加熱中前記センサチップ40も加熱され、加熱中の温度は前記温度検出端67により検出される。前記センサチップ40、固定クランプ30、可動クランプ32は加熱により熱膨張し、熱膨張差による変位が生じるが、前記可動クランプ32は可動であり、熱膨張差分が変位し、該変位は前記スライドパイプ43の軸方向の変位、前記スプリング44の撓み変化により吸収される。而して、前記固定クランプ30、可動クランプ32、センサチップ40が熱膨張で損傷することはない。
【0030】
更に、前記センサチップ40と前記固定クランプ30、可動クランプ32との接触箇所は固定突起34、位置決め舌部35、可動突起36、位置決め舌部37と部分的であり、接触部が少なく温度の逃げが少なく、而もセンサチップ40自体は熱容量の少ないものとすることができ、急速加熱に対する熱応答性が良く、更には表裏両面で光の照射を受けるので、検出温度は加熱室内の加熱状態を反映し、正確な温度測定が可能となる。
【0031】
前記4つの温度検出ユニット24,25,26,27による検出結果は、温度検出ユニット24については温度制御用、温度検出ユニット25については過温監視用に、又温度検出ユニット26,27についてはモニタ用に利用される。
【0032】
温度検出ユニットの保守点検を行うには温度検出ユニットをランプアニール装置の室外から着脱を行う。又温度検出ユニットの予備を設けておけば、保守点検中加熱炉を休止させる必要が無く稼働率が向上する。
【0033】
【発明の効果】
以上述べた如く本発明によれば、温度検出センサはユニット化された温度センサの支持装置に支持されるので、取扱いが容易であり、保守性が良く、加熱室の所要の高さに支持可能であるので温度検出センサは表裏両面から加熱され、更に温度センサ自体は熱容量が小さいものとすることができ、加熱に対する応答性が良く正確な温度測定が可能となり、更に温度センサ把持部は稼働であり熱膨張差を吸収でき損傷を防止し、更にロッド支持部は気密構造であるので加熱室への着脱が容易であり、更に温度検出器の着脱も容易である等の優れた効果を発揮する。
【図面の簡単な説明】
【図1】本発明の実施の形態を示す分解斜視図である。
【図2】本発明に係る温度センサの支持装置が設けられるランプアニール装置の平面図である。
【図3】同前ランプアニール装置の立断面図である。
【符号の説明】
1 加熱室壁部
7 加熱室
10 下ランプユニット
13 上ランプユニット
18 ウェーハ
24 温度検出ユニット
25 温度検出ユニット
26 温度検出ユニット
27 温度検出ユニット
30 固定クランプ
32 可動クランプ
40 センサチップ
42 支持ロッド
43 スライドパイプ
44 スプリング
49 ロッドホルダ
61 フランジ
67 温度検出端
68 熱電対素線
73 センサチップ支持部
74 ロッド支持部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a temperature sensor support device for supporting a temperature sensor for detecting a temperature in a processing chamber of a semiconductor manufacturing apparatus or a processing chamber of another heat treatment apparatus.
[0002]
[Prior art]
In a processing chamber of a heat treatment apparatus, for example, a semiconductor manufacturing apparatus, a thin film is formed on a substrate to be processed such as a silicon wafer, and heat treatment such as etching or annealing is performed. It greatly affects the state. Therefore, a temperature sensor is installed at a required location in the processing chamber to detect the temperature during processing, and temperature control is performed based on the detection result.
[0003]
Conventionally, the temperature inside the processing chamber is detected by inserting a sheath thermocouple from the outside of the processing chamber to detect the amount of light received when the sheath is heated, or by bonding the thermocouple to a silicon chip. The silicon chip is installed and detected at a required location in the processing chamber. In particular, when the processing chamber has an airtight structure, hermetic flanges are used to seal the thermocouple through portions.
[0004]
[Problems to be solved by the invention]
A sheath thermocouple is inserted into the processing chamber. When a metal is used for the sheath, it is vulnerable to thermal shock when heated rapidly. Moreover, when manufacturing a semiconductor, there exists a possibility of causing a metal contamination. When the sheath is made of ceramic or quartz in consideration of thermal shock and metal contamination, there is a problem of lack of responsiveness, a problem with the amount of received light, and a lack of reliability in temperature detection.
[0005]
Next, in the case where the thermocouple is bonded to the silicon chip, there is no means for accurately positioning the silicon chip at a predetermined position in the processing chamber, and there is no means for fixing the silicon chip after positioning. difficult. Furthermore, it is easily affected by the periphery of the sensor, the measurement results vary depending on the set position, and there is a problem in the reproducibility of temperature detection.
[0006]
In view of such circumstances, the present invention is intended to withstand thermal shock when rapidly heated and to further improve the reliability and reproducibility of temperature detection.
[0007]
[Means for Solving the Problems]
The present invention includes a heating chamber for heating a substrate to be processed from both front and back sides, and a temperature detection unit inserted into the heating chamber, and the temperature detection unit is a sensor chip to which a temperature detection end of a thermocouple is bonded. A support rod fixed to a detachable rod support that is airtightly fixed to the heating chamber, the support rod can be inserted into the heating chamber, and a pair of clamps are provided at the tip of the support rod. phased and a support device, the support device is a heat treatment apparatus constructed as to be supported at a predetermined height of the heating chamber together with the to the bunch equity as a sensor chip from the front and back surfaces irradiated with light by the clamp are those according to, and used in the heat treatment apparatus having a heating chamber for heating a substrate to be processed from both sides, is fixed and the sensor chip temperature sensing end of the thermocouple is bonded, hermetically to the heating chamber A support device fixed to a detachable rod support, the support rod can be inserted into the heating chamber, and a pair of clamps are provided at the tip of the support rod to form a unit; and supporting device is intended according to the temperature detection unit configured as to support a predetermined height of the heating chamber together with the to the bunch equity as a sensor chip from the front and back surfaces irradiated with light by the clamp, to be further or Used in a heat treatment apparatus having a heating chamber for heating a processing substrate from both front and back surfaces, a sensor chip to which a temperature detection end of a thermocouple is bonded, and a support rod to a rod support portion that is hermetically fixed to and removable from the heating chamber. And a support device that is unitized by providing a pair of clamps at the tip of the support rod, the support device being unitized by allowing the support rod to be inserted into the heating chamber. By the temperature detection unit configured as to support a predetermined height of the heating chamber as well as lifting the bunch as irradiated with light of the sensor chip from both sides by serial clamp, and detecting the temperature of the heating chamber And a step of heating the substrate to be processed in the heating chamber based on the detected temperature.
[0008]
Since the temperature detection sensor is supported by a unitized temperature sensor support device, it is easy to handle, has good maintainability, and the temperature sensor grip is movable and can absorb the difference in thermal expansion to prevent damage. Since the sensor chip is held by a clamp, it is easy to attach and detach, and the sensor chip is irradiated with light from both the front and back sides, so the detected temperature reflects the heating state in the heating chamber and enables accurate temperature measurement. Become .
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0010]
First, referring to FIG. 2 and FIG. 3, a processing chamber of a semiconductor manufacturing apparatus in which the present invention is implemented, particularly a lamp annealing processing apparatus in which rapid high temperature heating is performed will be described.
[0011]
A heating chamber bottom 3 is hermetically provided via a transparent bottom plate 2 at the lower end of the heating chamber wall 1 in which a circular space is formed in the center, and a transparent top plate 4 is provided at the upper end of the heating chamber wall 1. The heating chamber ceiling part 5 is airtightly provided. A cylindrical inner wall 6 is fitted in the space of the heating chamber wall 1, and a heating chamber 7 is defined by the bottom plate 2, the top plate 4, and the inner wall 6.
[0012]
A reflector 8 is provided on the bottom 3 of the heating chamber so as to face the bottom plate 2, and a rod-shaped lamp perpendicular to the paper surface in FIG. 3, for example, a halogen lamp 9, is provided between the reflector 8 and the bottom plate 2. Are provided at a required interval to constitute the lower lamp unit 10. The heating chamber ceiling portion 5 is provided with a reflecting plate 12 facing the top plate 4, and a rod-shaped lamp perpendicular to the paper surface in FIG. 3 between the reflecting plate 12 and the top plate 4, for example, Halogen lamps 9 are provided at a required interval, and constitute an upper lamp unit 13.
[0013]
The heating chamber 7 is provided with an upper soaking plate 14 facing the top plate 4, and a lower soaking plate 15 is provided facing the bottom plate 2. A rotary stage 16 is provided at the center. The rotary stage 16 is supported by a support shaft 17 that extends downward through the heating chamber bottom 3 and is rotated via the support shaft 17. An object to be heated, such as a wafer 18, can be placed on the rotary stage 16. The wafer 18 has a transfer port 19 formed in the heating chamber wall 1 and a through-hole 20 formed in the inner wall 6. The transfer port 19 can be hermetically closed or opened by a gate valve 21.
[0014]
Two sets of rod-shaped temperature detection units 24 and 25 parallel to the loading / unloading direction of the wafer 18 are airtightly attached through the heating chamber wall 1 at symmetrical positions with respect to the center line. The temperature detection units 26 and 27 are mounted in an airtight manner through the heating chamber wall 1 so as to be perpendicular to the loading / unloading direction of 18 and facing each other across the center line.
[0015]
The temperature detection points of the temperature detection units 24, 25, 26, 27 are located at the respective tips, and each temperature detection point is arranged at a position divided into four equal parts on the circumference concentric with the center of the heating chamber 7. The temperature detection results of the temperature detection units 24, 25, 26, and 27 are appropriately used according to the purpose. For example, the temperature detection result of the temperature detection unit 24 is for temperature control, and the temperature detection result of the temperature detection unit 25 is warming. The temperature detection results of the monitoring and temperature detection units 26 and 27 are used for monitoring.
[0016]
The temperature detection units 24, 25, 26, and 27 will be described. Since the temperature detection units 24, 25, 26, and 27 have the same structure, the temperature detection unit 25 will be described below.
[0017]
The fixed clamp 30 is clamped and fixed at the base by two upper and lower clamp holding plates 31, and a substantially L-shaped movable clamp 32 facing the fixed clamp 30 is inserted between the clamp holding plates 31 and via pins 33. It is pivotally attached. Fixed projections 34, 34 projecting toward the movable clamp 32 are formed inside the fixed clamp 30, and a positioning tongue 35 is formed on the inner base of the fixed clamp 30. A movable protrusion 36 that protrudes toward the fixed clamp 30 protrudes from the inner tip of the movable clamp 32, and a positioning tongue 37 is formed at the inner base of the movable clamp 32. A pressure receiving portion 38 is provided in a protruding manner. As will be described later, the sensor chip 40 is held between the fixed clamp 30 and the movable clamp 32.
[0018]
A tip of a support rod 42 is fixed to the clamp holding plate 31, and a slide pipe 43 is slidably fitted to the support rod 42 and a spring 44 is fitted therein. A spring stopper 45 is fixed to the support rod 42 by a bolt 46, and the spring 44 is in a compressed state between the slide pipe 43 and the spring stopper 45, and urges the slide pipe 43 toward the clamp holding plate 31 side. Yes.
[0019]
A piece 47 is fixed to the distal end portion of the slide pipe 43, the slide pipe 43 abuts against the pressure receiving portion 38 via the piece 47, and the movable clamp 32 is centered on the pin 33 with the distal end on the center side. It is energized. The base end portion of the support rod 42 penetrates the spring stopper 45, the split ring 48 is fitted to the base end portion, and the base end portion is fitted to the rod holder 49 and fixed by the push screw 50. Yes. The rod holder 49 has a bobbin shape having flange portions 52 and 53 on the distal end side and the proximal end side, respectively. A boss portion 54 protrudes further on the distal end side, and the base portion of the support rod 42 is fitted to the boss portion 54. . The rod holder 49 is hollow, and a rod holding hole 55 is formed in the boss portion 54 and through holes 56 are formed on both sides of the rod holding hole 55. The holes 56 and 56 communicate with a hollow portion (not shown) of the rod holder 49. An O-ring groove 57 is formed in the front end surface of the flange portion 52, and an O-ring 58 is fitted in the O-ring groove 57.
[0020]
The fixed clamp 30, the movable clamp 32, the support rod 42, and the like constitute a sensor chip support portion 73, the rod holder 49 and the flange 61 constitute a rod support portion 74, and the sensor chip 40 includes the sensor chip support portion 73. And a rod support part 74 so as to be detachably supported by a support device unitized.
[0021]
What is exposed in the heating chamber 7 such as the fixed clamp 30, clamp holding plate 31, movable clamp 32, pin 33, support rod 42, slide pipe 43, etc. is made of quartz in order to avoid metal contamination. Further, the spring 44 and the spring stopper 45 are made of metal, but are located in the periphery of the heating chamber 7, and particularly enter the inside of the heating chamber wall 1 and are not irradiated with light. Not.
[0022]
A flange 61 is hermetically fixed to the rod holder 49 by a bolt 60 with an O-ring 62 interposed. An O-ring groove 63 is formed in the front end surface of the flange 61, and the O-ring 62 is fitted in the O-ring groove 63. Two conductive wires 64 and 65 are inserted into the flange 61 in an airtight manner, and both ends of the conductive wires 64 and 65 are bent in a hook shape.
[0023]
A temperature detecting end 67 of a thermocouple is embedded and bonded in the center of the sensor chip 40 and functions as a temperature sensor. Thermocouple wires 68, 68 extending from the temperature detection end 67 are covered with quartz tubes 69, 69. The thermocouple wires 68 and 68 covered with the quartz tube 69 are inserted through the gaps between the clamp holding plate 31 and the clamp holding plate 31 and through the through holes 56 and 56. The base ends of the thermocouple wires 68, 68 are connected to the hook portions of the conductive wires 64, 65 by screws 70, 70.
[0024]
The sensor chip 40 has both corners on the clamp holding plate 31 side in contact with the positioning tongue 35 and the positioning tongue 37, respectively, and is positioned in the axial direction. Further, the fixing projection 34 is applied by the biasing force of the spring 44. , 34 and the movable protrusion 36 are gripped with an appropriate force.
[0025]
For attachment to the heating chamber wall 1, the tip side from the boss 54 is inserted into the heating chamber 7, and the flange 52 is fixed with a bolt. An O-ring 58 is interposed between the flange portion 52 and the heating chamber 7 so as to be airtight.
[0026]
The sensor chip 40 is gripped by the fixed clamp 30 and the movable clamp 32, whereby the dimension from the flange portion 52 is mechanically determined and further held at a predetermined height.
[0027]
The operation will be described below.
[0028]
The gate valve 21 is opened, and the wafer 18 is placed on the rotary stage 16 through the transfer port 19. The gate valve 21 closes the transfer port 19 and the lamp 9 and the lamp 9 are heated. The rotating stage 16 rotates during heating. The lamp 9 and the lamp 9 first heat the upper soaking plate 14, the lower soaking plate 15 and the rotary stage 16, and the wafer 18 is heated via the upper soaking plate 14, the lower soaking plate 15 and the rotating stage 16. To do. For this reason, the heating unevenness of the lamp 9 and the lamp 9 is eliminated, and the wafer 18 is heated uniformly.
[0029]
During the heating, the sensor chip 40 is also heated, and the temperature during the heating is detected by the temperature detection end 67. The sensor chip 40, the fixed clamp 30, and the movable clamp 32 are thermally expanded by heating, and displacement due to a difference in thermal expansion occurs. However, the movable clamp 32 is movable and the thermal expansion difference is displaced, and the displacement is the slide pipe. 43 is absorbed by the axial displacement of 43 and the bending change of the spring 44. Thus, the fixed clamp 30, the movable clamp 32, and the sensor chip 40 are not damaged by thermal expansion.
[0030]
Further, the sensor chip 40 is in contact with the fixed clamp 30 and the movable clamp 32 at a part of the fixed projection 34, the positioning tongue 35, the movable projection 36, and the positioning tongue 37. less, Thus also the sensor chip 40 itself can be made small thermal capacity, good thermal responsiveness to rapid heating, since even subjected to irradiation of light at both sides, the detected temperature is a heating condition of the heating chamber Reflecting, accurate temperature measurement becomes possible.
[0031]
The detection results of the four temperature detection units 24, 25, 26, 27 are for temperature control for the temperature detection unit 24, for overtemperature monitoring for the temperature detection unit 25, and for monitoring for the temperature detection units 26, 27. Used for.
[0032]
To perform maintenance and inspection of the temperature detection unit, the temperature detection unit is attached and detached from the outside of the lamp annealing apparatus. If a spare temperature detection unit is provided, it is not necessary to stop the heating furnace during maintenance and inspection, and the operating rate is improved.
[0033]
【The invention's effect】
As described above, according to the present invention, since the temperature detection sensor is supported by the unitized temperature sensor support device, it is easy to handle, has good maintainability, and can be supported at the required height of the heating chamber. Therefore, the temperature detection sensor can be heated from both the front and back sides, and the temperature sensor itself can have a small heat capacity, and the temperature response can be accurately measured with good response to heating. It can absorb the difference in thermal expansion and prevent damage, and the rod support part has an airtight structure, so it can be easily attached to and detached from the heating chamber, and the temperature detector is also easy to attach and detach. .
[Brief description of the drawings]
FIG. 1 is an exploded perspective view showing an embodiment of the present invention.
FIG. 2 is a plan view of a lamp annealing apparatus provided with a temperature sensor support device according to the present invention.
FIG. 3 is an elevational sectional view of the same lamp annealing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Heating chamber wall 7 Heating chamber 10 Lower lamp unit 13 Upper lamp unit 18 Wafer 24 Temperature detection unit 25 Temperature detection unit 26 Temperature detection unit 27 Temperature detection unit 30 Fixed clamp 32 Movable clamp 40 Sensor chip 42 Support rod 43 Slide pipe 44 Spring 49 Rod holder 61 Flange 67 Temperature detection end 68 Thermocouple element 73 Sensor chip support 74 Rod support

Claims (3)

被処理基板を表裏両面から加熱する加熱室と、該加熱室に挿入される温度検出ユニットとを具備し、該温度検出ユニットは、熱電対の温度検出端が接着されたセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成したことを特徴とする熱処理装置。A heating chamber that heats the substrate to be processed from both the front and back sides, and a temperature detection unit that is inserted into the heating chamber . The temperature detection unit includes a sensor chip to which a temperature detection end of a thermocouple is bonded, and the heating A support device in which a support rod is fixed to a rod support portion that is hermetically fixed to a chamber and is detachable, the support rod can be inserted into the heating chamber, and a pair of clamps are provided at the tip of the support rod to form a unit has the door, the heat treatment the support apparatus characterized by being configured as supporting the heating chamber of predetermined height while lifting the sensor chip so as irradiated with light from both sides the bunch by the clamp apparatus. 被処理基板を表裏両面から加熱する加熱室を有する熱処理装置に用いられ、熱電対の温度検出端が接着されたセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成したことを特徴とする温度検出ユニット。Used in a heat treatment apparatus having a heating chamber that heats the substrate to be processed from both the front and back sides, and supported by a sensor chip to which the temperature detection end of a thermocouple is bonded, and a rod support that is airtightly fixed to the heating chamber and removable. A support device in which the rod is fixed and the support rod can be inserted into the heating chamber, and a pair of clamps are provided at the tip of the support rod, and the support device is unitized by the clamp. temperature detection unit, characterized by being configured as supporting a predetermined height of the heating chamber as well as lifting the bunch as irradiated with light chips from both sides. 被処理基板を表裏両面から加熱する加熱室を有する熱処理装置に用いられ、熱電対の温度検出端が接着されセンサチップと、前記加熱室に気密に固着され着脱可能なロッド支持部に支持ロッドを固着し、該支持ロッドを前記加熱室内に挿入可能とすると共に前記支持ロッドの先端に1対のクランプを設けてユニット化した支持装置とを有し、該支持装置は前記クランプにより前記センサチップを表裏両面から光の照射を受ける様に把持すると共に前記加熱室の所定の高さに支持する様構成した温度検出ユニットにより前記加熱室の温度を検出する工程と、検出された温度に基づき前記加熱室で被処理基板を加熱する工程とを有することを特徴とする半導体装置の製造方法。 Used in a heat treatment apparatus having a heating chamber for heating a substrate to be processed from both the front and back surfaces, a sensor chip to which a temperature detection end of a thermocouple is bonded, and a support rod to a rod support portion that is hermetically fixed to the heating chamber and is detachable And a support device that is unitized by providing a pair of clamps at the tip of the support rod, and the support device is provided with the sensor chip by the clamp. the by the temperature detection unit configured as to support a predetermined height of the heating chamber while the bunch equity as irradiated from both sides of the light, and detecting the temperature of the heating chamber, the detected temperature And a step of heating the substrate to be processed in the heating chamber.
JP27643397A 1997-09-24 1997-09-24 Temperature sensor support device Expired - Fee Related JP3874042B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27643397A JP3874042B2 (en) 1997-09-24 1997-09-24 Temperature sensor support device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27643397A JP3874042B2 (en) 1997-09-24 1997-09-24 Temperature sensor support device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006186755A Division JP2006352145A (en) 2006-07-06 2006-07-06 Heat treatment apparatus, temperature detection unit for use in the same, method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH1197372A JPH1197372A (en) 1999-04-09
JP3874042B2 true JP3874042B2 (en) 2007-01-31

Family

ID=17569362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27643397A Expired - Fee Related JP3874042B2 (en) 1997-09-24 1997-09-24 Temperature sensor support device

Country Status (1)

Country Link
JP (1) JP3874042B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352145A (en) * 2006-07-06 2006-12-28 Hitachi Kokusai Electric Inc Heat treatment apparatus, temperature detection unit for use in the same, method of manufacturing semiconductor device
JP5173225B2 (en) * 2007-03-30 2013-04-03 三井造船株式会社 Heating system

Also Published As

Publication number Publication date
JPH1197372A (en) 1999-04-09

Similar Documents

Publication Publication Date Title
JP2780866B2 (en) Light irradiation heating substrate temperature measurement device
KR100371991B1 (en) Apparatus and method for rotational alignment and degassing semiconductor substrates in a single vacuum chamber
US5410162A (en) Apparatus for and method of rapid testing of semiconductor components at elevated temperature
JP4825812B2 (en) Semiconductor wafer inspection method and apparatus using chuck device capable of adjusting temperature
JPH05118928A (en) Contact type temperature measuring method
US6204484B1 (en) System for measuring the temperature of a semiconductor wafer during thermal processing
JP4820534B2 (en) A prober for testing substrates at low temperatures
JP3874042B2 (en) Temperature sensor support device
JP4671142B2 (en) Semiconductor wafer processing apparatus, temperature measurement probe, and temperature measurement method thereof
EP0280952B1 (en) Direct wafer temperature control
JPS6037116A (en) Optical irradiating furnace
JP2006352145A (en) Heat treatment apparatus, temperature detection unit for use in the same, method of manufacturing semiconductor device
JPH11354526A (en) Plate body heating device
JPH10206360A (en) Heat reserving performance inspecting method for vacuum heat insulating structural body and device therefor
JP2005147976A (en) Temperature-measuring apparatus, chuck monitor, and plasma processing device
KR100413646B1 (en) Temperature-detecting element
JP4213133B2 (en) Manufacturing method of processing apparatus, manufacturing method of quartz product in processing apparatus, and measuring jig
JP4656808B2 (en) Vacuum apparatus and heat treatment apparatus
JP2004165640A (en) Single-wafer processing apparatus
JP3971617B2 (en) SUBSTRATE TEMPERATURE DETECTING DEVICE FOR VACUUM PROCESSING DEVICE, AND VACUUM PROCESSING DEVICE PROVIDED WITH THE SUBSTRATE TEMPERATURE DETECTING DEVICE
JP3130908B2 (en) Temperature measurement method for heat treatment furnace for substrates
JP3571634B2 (en) Substrate processing equipment
JP2957046B2 (en) How to fix the thermocouple to the measured object
JP2003065859A (en) Temperature measuring device and semiconductor manufacturing device
JPH07151606A (en) Instrument for measuring temperature of substrate

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040906

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040906

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051220

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060509

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060707

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061017

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091102

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101102

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111102

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111102

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121102

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121102

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131102

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees