JP2003064306A5 - - Google Patents

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Publication number
JP2003064306A5
JP2003064306A5 JP2001257112A JP2001257112A JP2003064306A5 JP 2003064306 A5 JP2003064306 A5 JP 2003064306A5 JP 2001257112 A JP2001257112 A JP 2001257112A JP 2001257112 A JP2001257112 A JP 2001257112A JP 2003064306 A5 JP2003064306 A5 JP 2003064306A5
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JP
Japan
Prior art keywords
group
different
same
siloxane
hydrolyzing
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JP2001257112A
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Japanese (ja)
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JP2003064306A (en
JP4972834B2 (en
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Priority to JP2001257112A priority Critical patent/JP4972834B2/en
Priority claimed from JP2001257112A external-priority patent/JP4972834B2/en
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Publication of JP2003064306A5 publication Critical patent/JP2003064306A5/ja
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Publication of JP4972834B2 publication Critical patent/JP4972834B2/en
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Expired - Fee Related legal-status Critical Current

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Claims (1)

下記一般式（１）で表せられる化合物を加水分解縮合して得られるシロキサン樹脂であって、
ケイ素１原子あたりに結合しているＨ、Ｆ、Ｂ、Ｎ、Ａｌ、Ｐ、Ｓｉ、Ｇｅ、Ｔｉ及びＣからからなる群より選ばれる少なくとも１種の原子の総数が０．６５以下であるシロキサン樹脂。
Figure 2003064306
（式中、Ｒ１は、Ｈ若しくはＦ又はＢ、Ｎ、Ａｌ、Ｐ、Ｓｉ、Ｇｅ若しくはＴｉを含む基又は炭素数１〜２０の有機基を示し、同一でも異なっていてもよく、Ｘは、加水分解性基を示し、同一でも異なっていてもよく、ｎは０又は１の整数である） A siloxane resin obtained by down following general formula a compound which is expressed by (1) hydrolyzing and condensing,
Siloxane in which the total number of at least one atom selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C bonded per silicon atom is 0.65 or less resin.
Figure 2003064306
 (Wherein R 1 represents H or F or a group containing B, N, Al, P, Si, Ge or Ti, or an organic group having 1 to 20 carbon atoms, and may be the same or different, and X is , represents a hydrolyzable group, it may be the same or different, n represents an integer of 0 or 1)
JP2001257112A 2001-08-28 2001-08-28 Siloxane resin Expired - Fee Related JP4972834B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001257112A JP4972834B2 (en) 2001-08-28 2001-08-28 Siloxane resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001257112A JP4972834B2 (en) 2001-08-28 2001-08-28 Siloxane resin

Publications (3)

Publication Number Publication Date
JP2003064306A JP2003064306A (en) 2003-03-05
JP2003064306A5 true JP2003064306A5 (en) 2005-10-13
JP4972834B2 JP4972834B2 (en) 2012-07-11

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Family Applications (1)

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JP2001257112A Expired - Fee Related JP4972834B2 (en) 2001-08-28 2001-08-28 Siloxane resin

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JP (1) JP4972834B2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687590B2 (en) 2002-02-27 2010-03-30 Hitachi Chemical Company, Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
US7682701B2 (en) 2002-02-27 2010-03-23 Hitachi Chemical Co., Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP4151579B2 (en) * 2002-02-27 2008-09-17 日立化成工業株式会社 Composition for forming silica-based film, silica-based film, method for producing the same, and electronic component
JP2004277502A (en) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd Silica film-forming composition, silica film, its forming method and electronic part having silica film
TW200605220A (en) * 2004-06-21 2006-02-01 Hitachi Chemical Co Ltd Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20060047034A1 (en) 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
US20080260956A1 (en) * 2004-12-21 2008-10-23 Haruaki Sakurai Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part
JP2006213908A (en) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd Composition for forming silica-based film, method for forming silica-based film, silica-based film and electronic part
JP2009193911A (en) * 2008-02-18 2009-08-27 Sony Corp Dye-sensitized photoelectric conversion element and its manufacturing method, dye-sensitized photoelectric conversion element module and its manufacturing method, electronic device, and method for manufacturing porous silica film
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3287119B2 (en) * 1994-07-13 2002-05-27 住友化学工業株式会社 Coating solution for forming silica-based insulating film
JPH08245792A (en) * 1995-03-10 1996-09-24 Mitsubishi Electric Corp Silicone ladder polymer, silicone ladder prepolymer and their production
JP3328545B2 (en) * 1997-05-28 2002-09-24 東レ・ダウコーニング・シリコーン株式会社 Method for manufacturing semiconductor device
JP2978879B1 (en) * 1998-05-26 1999-11-15 静岡日本電気株式会社 Molding material for LSI package
US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
JP4195773B2 (en) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 Composition for forming interlayer insulating film, method for forming interlayer insulating film, and silica-based interlayer insulating film
US6576568B2 (en) * 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations

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