JP2003063860A - Sintered compact target, dielectric thin film using the same and method for manufacturing the same, and electronic component using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sintered compact target which has a high sintered density, so as to reduce the amount of leak current of a dielectric thin film and improve the resistance to pressure of the thin film by utilizing the sintered compact target. SOLUTION: A membrane capacity element 10 consists of a laminating structure composed of a bonding layer 14, a lower electrode 16, a dielectric membrane 18, and an upper electrode 20 laminated in order on a substrate 12. The dielectric membrane 18 is made with the vapor-phase growth method using the sintered compact target whose main component is a perovskite structure expressed with a general formula Rx My Oz . As impurity elements to improve the dielectric characteristic, the target contains at least one element selected from among Mg, Mn, Cr, Co, V, Fe, Ni, Cu, Zn, Ho, Y, Er, La, and Nb of 0.05 mol% or more and less than 10 mol%, and, as a sintering aid, Si of 0.1 mol% or more and less than 5.0 mol%.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sintered body target having a perovskite structure, a dielectric thin film using the same, a method for manufacturing the same, and an electronic component using the same.

[0002]

BACKGROUND ART Perovskite oxide materials typified by BaTiO ₃ and SrTiO ₃ have a paraelectric property, a ferroelectric property,
Due to its extremely diverse physical properties such as the piezoelectric effect, it has recently been applied as a wide range of electronic materials such as high dielectric constant capacitor materials, memory materials, sensor materials, actuator materials, and the development of new devices utilizing these physical properties. Is being actively conducted. In particular, there is a strong demand for downsizing and thinning of electronic components due to downsizing and high integration of electronic devices. For this reason, perovskite type high dielectric constant thin films and ferroelectric thin films have attracted great attention.
RAM (Dynamic Random Access Memory), MMIC
It is expected to be applied to capacitors for (Microwave Monolithic Integrated Circuit) or FeRAM which is a non-volatile memory.

With the miniaturization and high integration of electronic parts due to such progress in semiconductor technology, ultra-thin dielectric films and three-dimensional structures have been used to reduce the capacitor area. Therefore, the manufacturing process of the semiconductor device is complicated, and the fine processing technology is approaching its limit, and improvement in yield and reliability is desired.

In recent years, like the high dielectric constant thin film of Japanese Patent No. 250061, as a dielectric thin film having a high dielectric constant and good insulating properties, a (Ba, Sr) TiO ₃ -based dielectric thin film has a Mn, It has been proposed to add at least one kind of element selected from Pb and rare earth elements. As described above, a method of adding a trace element to the dielectric thin film to achieve both good insulation characteristics and high dielectric constant has begun to be studied.

[0005]

By the way, the conventional DRA
Silicon oxides and silicon nitrides that have been used as capacitor materials for M are mainly used in an amorphous state, whereas dielectric materials having a perovskite structure have a large relative dielectric constant. It is used in the crystalline state because it utilizes ionic polarization in the crystal to obtain. Therefore, the leak current in the thin film capacitor tends to be larger than that when an amorphous material is used as the dielectric. Therefore, unless the leak current of the crystalline dielectric thin film is reduced, there is a possibility that it cannot be used as a thin film capacitive element.

For such inconvenience, methods such as non-stoichiometric composition control and addition of trace impurities as in the background art described above have been studied. However, the sintering density of the sintered body target used when forming the dielectric thin film by these methods by physical vapor deposition methods such as sputtering method and laser ablation method depends on the kind of trace elements to be added and It shows extremely large changes depending on the stoichiometric composition. For example, FIG. _6, R a R _x M y _{O 3} is Sr
3 shows the sintered density of the sintered body target when M is Ti. Samples S1 to S5 have x / y of 0.8 to
The value was changed to 1.5 and shows the sintering density and the theoretical density ratio at this time. In the case of the SrTiO ₃ thin film, the maximum dielectric constant is exhibited when Sr is 10 to 20% excess, but as shown in the figure, the sintering density of Sr excess SrTiO ₃ (Samples S4 and S5) is 3. 3 or 3.7, and the theoretical density ratio is 65% or 73%. That is, the sintering density of Sr-rich SrTiO ₃ is
Compared to the sintered density when Ti is excessive, it is reduced by 20% or more. Further, in the dielectric thin film, SrTiO ₃ added with an element serving as an acceptor also improves the insulating property,
Depending on the added element, the sintered density is greatly reduced.

A target having such a low sintering density is
When exposed to plasma at the time of film formation, particles are generated, which can be a great obstacle in terms of matching with other semiconductor process peripheral technologies, and therefore cannot be used. Therefore, in general, the combination of trace elements and non-stoichiometric compositions that can be used for controlling the physical properties of the dielectric thin film naturally causes limitations. Furthermore, the recent increase in the size of semiconductor processes (increased area) directly reflects the demand for increase in the size of the sintered compact target. However, if the sintered compact target is large, the probability of damage during the production of the target or during film formation increases. From this point of view, further improvement of the sinterability (sintering density) of the target is indispensable for increasing the size.

The present invention focuses on the above points,
The purpose thereof is to provide a sintered compact target having a high sintered density and suitable for upsizing. Another object is to reduce the leak current of the dielectric thin film and improve the withstand voltage characteristics by using the sintered body target.

[0009]

In order to achieve the above object, the present invention is a sintered compact target mainly containing a perovskite structure represented by R _x M _y O _z , wherein R is
It is composed of at least one element selected from Sr, Ba, Ca and Pb, M is composed of at least one element selected from Ti and Zr, and Mg, Mn and C
r, Co, V, Fe, Ni, Cu, Zn, Ho, Y, E
At least one element selected from r, La, and Nb is contained in an amount of 0.05 mol% or more and less than 10 mol%, and Si is contained in an amount of 0.1 mol% or more and less than 5 mol%. One of the major form is the ratio of the _R x _M y _{O z} of x and y is equal to or satisfies the condition 0.8 ≦ x / y ≦ 1.5.

Another aspect of the invention is a dielectric thin film formed by a vapor phase growth method using the sintered target.

Still another aspect of the present invention is characterized in that a dielectric thin film is produced by a vapor phase growth method using the sintered body target. One of the main forms is characterized in that the substrate temperature during the film formation is set to 400 ° C to 800 ° C.

Still another invention is a method of manufacturing a dielectric thin film using the above-mentioned sintered body target, which comprises forming a dielectric thin film by a vapor phase growth method and then crystallizing it in an atmosphere containing oxygen. It is characterized by promoting. One of the main forms is that the substrate temperature at the time of forming the dielectric thin film is 150 to 6
The temperature is set to 00 ° C. and the crystallization is accelerated for 450 to 8
It is characterized in that it is carried out in an oxygen atmosphere at 00 ° C.

Still another aspect of the present invention is an electronic component using the dielectric thin film. The above and other objects, features and advantages of the present invention will be apparent from the following detailed description and the accompanying drawings.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments ... Embodiments of the present invention will be described in detail below. First, an embodiment of the present invention will be described with reference to FIG.
FIG. 1 is a sectional view showing a laminated structure of a thin film capacitor 10 to which the present invention is applied. As shown in the figure, the thin film capacitive element 10 has a laminated structure in which a bonding layer (barrier layer or base layer) 14, a lower electrode 16, a dielectric thin film 18, and an upper electrode 20 are sequentially laminated on a substrate 12. There is.

As the substrate 12, silicon (Si), sapphire (Al ₂ O ₃ ), quartz glass (SiO ₂ ), zirconia (ZrO ₂ ) or the like can be used. As the lower electrode 16 and the upper electrode 20, platinum (Pt),
Gold (Au), silver (Ag), copper (Cu), chromium (C
r), aluminum (Al), iridium (Ir), ruthenium (Ru), strontium ruthenate (Sr
RuO ₃ ) or the like is used. As the bonding layer 14 of the lower electrode 16, tantalum (Ta), titanium (Ti),
Titanium oxide (TiO _x ), iridium oxide (Ir
O ₂ ) and ruthenium (Ru) are generally used.

Further, the dielectric thin film 18 has the general formula _R x _{M y}
The film is formed by a vapor phase growth method using a sintered target having a perovskite structure represented by O _z as a main component. R
Is at least 1 selected from strontium (Sr), barium (Ba), calcium (Ca), and lead (Pb).
M is at least one element selected from titanium (Ti) and zirconium (Zr). Further, the sintered target has magnesium (Mg), manganese (Mn), chromium (Cr), cobalt (Co), as acceptor (or donor) elements effective for improving the dielectric characteristics of the dielectric thin film 18. Vanadium (V), iron (Fe), nickel (Ni), copper (Cu), zinc (Z
n), holmium (Ho), yttrium (Y), erbium (Er), lanthanum (La), niobium (Nb), and at least one element selected from 0.05 mol% to less than 10 mol% and target sintering. Silicon (Si) of 0.1 mol% or more and less than 5.0 mol% as an auxiliary agent
Is included.

With such a structure, the density of the sintered body target can be improved. And
By increasing the sinterability of the sintered body target, the degree of freedom in selecting the elements that can be added to the target and the stoichiometric composition of the target increases. For example, Si as a trace additive
It has been confirmed that the addition of Al has almost no effect on the electrical characteristics of the dielectric thin film.

Next, a manufacturing process of the laminated structure of the thin film capacitive element 10 shown in FIG. 1 will be described. First, the bonding layer 14 and the lower electrode 16 are sequentially formed on the substrate 12 by vapor deposition or sputtering. A dielectric thin film 18 is formed on the lower electrode 16 by a vapor phase growth method at a substrate temperature of 400 ° C. to 800 ° C. using the sintered body target having the above-described configuration. When the substrate temperature is 400 ° C. or lower, there is a disadvantage that the crystallization of the dielectric thin film cannot be sufficiently promoted.
Above 0 ° C., there are disadvantages from the viewpoint of the heat resistance of the lower electrode, such as surface roughness.

Conditions for forming the dielectric thin film 18 are as follows:
(1) In the case of the sputtering method, atmospheric gas Ar: 10
It is preferable to carry out at 10 ⁻² Pa, O ₂ : 10 to 10 ⁻² Pa, and to set the film thickness to 200 to 3000 Å. Also,
(2) In the case of the laser ablation method, the atmosphere gas O _{2 is} 10 to 10 ⁻⁴ Pa, and the film thickness is 200 to 3
It is preferably 000Å. In this way, when the dielectric thin film 18 is formed by either method,
The upper electrode 20 is formed by vapor deposition or sputtering.

The thin film capacitive element 10 thus manufactured
Is M that acts as an acceptor (or donor) element
g, Mn, Cr, Co, V, Fe, Ni, Cu, Zn,
Since it has a layer of the dielectric thin film 18 containing at least one element selected from Ho, Y, Er, Y, La, and Nb and Si as a sintering aid, the insulating property and the dielectric property are improved. That is, (1) the addition of Si improves the sintered density of the sintered target. Therefore, it is possible to widen the range of selection of the element to be added for reducing the leak current and improving the withstand voltage, while suppressing the generation of particles during the formation of the dielectric thin film, and thus the other manufacturing process The influence on is reduced. Further, the improvement of the sintered density of the target makes it easy to deal with the increase in size of the target. (2) Acceptor (donor) for the sintered target
Due to the effect of adding the element, it is possible to reduce the leak current and the withstand voltage of the dielectric thin film manufactured by using the target, and improve the dielectric characteristics. Therefore, it is suitable for a thin film capacitive element used in an integrated circuit or its peripheral circuits.

Example 1 Next, examples of the sintered target and the dielectric thin film of the present invention will be described. First, the first embodiment will be described with reference to FIGS. FIG. 2 is a cross-sectional view showing the laminated structure of the thin film capacitive element 30 of this embodiment. A Si substrate with a thermal oxide film is used as the substrate 32. On the substrate 32, Ta is deposited as the bonding layer 34 and Pt is deposited as the lower electrode 36 with a film thickness of 10 nm and 250 nm, respectively, in this order by RF sputtering at a substrate temperature of 250 ° C.

Then, using a 20% Sr excess sintered body containing 1 mol% Mn and 1 mol% Si as a target, an Sr containing Mn and Si was formed by RF sputtering.
_{1.2 The} TiO _z thin film 38 is formed to a film thickness of about 100 nm. The substrate temperature is, eg, 600 ° C. Further, Pt as the upper electrode 40 is formed on the thin film 38 by the substrate temperature 12
A film was formed at 0 ° C. by an EB (Electron Beam) vacuum evaporation method.

The thin film capacitive element 3 manufactured as described above
In order to investigate the electrical characteristics of 0, the upper electrode 40 was etched by a lithographic method to obtain 100 μm × 100 μm
The size of the electrode was processed. For comparison, a 20% Sr excess of S was prepared by the same method as described above.
Among the r _1.2 TiO _z sintered targets, a target containing no impurities, a target containing 1 mol% of Mn, and a target containing 1 mol% of Si were used to form thin film capacitive elements, respectively.

FIG. 3 shows an example of electrical characteristics of these thin film capacitive elements in comparison. The electrical characteristics in the figure show the relationship between the voltage (horizontal axis) applied to the upper electrode 40 of the thin film capacitor and the current density (vertical axis). In the figure, the solid line graph GA ... When no impurities are contained (comparative example), the dotted line graph GB ... Mn is contained at 1 mol% (comparative example), and the chain line graph GC ... Si is contained at 1 mol%. In the case (comparative example), a two-dot chain line graph GD ... Si and Mn are each 1 mol%
In the case of including each (Example), the respective characteristics are shown.

Referring to FIG. 3, first, considering the amount of leak current when a voltage is applied, as shown in graphs GA to GC, the leak current of the thin film capacitive element manufactured as a comparative example has a voltage of ± 0.5 MV. In contrast to the steep rise near / cm, in the thin film capacitive element 30 of the present embodiment,
As shown in the graph GD, the voltage is ± 0.7 to 0.8 MV
The leak current rises sharply when the value is / cm. From this, it can be confirmed that the present embodiment is obviously effective in reducing the amount of leak current.

Next, S in the present example and the comparative example
When the relative permittivity of the r _1.2 TiO _z thin film 38 was measured, the result as shown in FIG. 4 (A) was obtained. In the figure,
The sample numbers 1 to 4 correspond to the conditions of the graphs GA to GD. According to this result, the relative permittivity of this example is lower than that of the comparative example, but the degree is smaller.

Furthermore, a sample is prepared for measuring the above-mentioned electrical characteristics.
The sintered density of the manufactured sintered body target was measured.
By the way, it became like FIG. 4 (B). Similarly, sample numbers 1 to
4 corresponds to the conditions of the graphs GA to GD. In the figure
As shown, a sample containing no Si as a sintering aid.
The sintered densities of the sintered body targets of Nos. 1 and 2 are respectively
3.3g / cm^Three, 3.4 g / cm^ThreeEven though
And sintered bodies of sample Nos. 3 and 4 with Si added at 1 mol%
The sintered density of the target is 3.9 g / cm, respectively. ^Three，
3.7 g / cm^ThreeAnd is baked by adding Si.
It can be seen that the consolidation density is improved.

From the results shown in FIGS. 3 and 4, the addition of Si, which is a sintering aid, improves the sintering density of the sintered body target, and further, the acceptor (or donor).
It can be seen that by adding Mn as an element, it is possible to obtain a dielectric thin film having excellent electric dielectric properties as a whole. The obtained dielectric thin film contains a perovskite phase (crystal phase) as a primary phase (main phase), and Si
The amorphous phase (amorphous phase) in which the structure including is broken is included as a secondary phase (sub phase). In addition, in the above-mentioned example, the case where Si and Mn are contained at 1 mol% each is shown, but if Si is less than 0.1 to 5 mol% and impurities are less than 0.05 to 10 mol%, almost the same good results are obtained. Good results have been obtained.

<Embodiment 2> ... Next, referring to FIG.
A second embodiment of the present invention will be described. This drawing is a cross-sectional view showing a laminated structure of a thin film capacitor according to a second embodiment of the present invention. In the figure, the thin film capacitive element 50 is formed on a substrate 52 as a wiring layer made of Si, and a conductive layer such as a plug 54 is formed on the substrate 52. As the substrate 52, W (tungsten) or the like may be used. The thin film capacitor 50 formed on the conductive layer such as the plug 54 is a DRAM or FeRA.
It is used as a charge storage unit of a semiconductor memory device such as M.

The thin film capacitive element 50 includes a bonding layer 56, a lower electrode 58, a dielectric thin film 6 on the substrate 52.
0 and the upper electrode 62 are sequentially stacked. The plug 5
4 and the bonding layer 56 provided between the lower electrode 56
For example, Ru or the like is used as the metal oxide. In addition to this, a metal whose oxide is conductive, a metal which itself is conductive, or a nitride or oxide of a metal which itself is conductive is used. , Is formed of a layer of silicide. Such metals include Re, Os, Rh, Ir and the like.
It is also possible to use a metal that does not form an oxide, such as Pt or Au.

A film, for example, is formed on the bonding layer 56.
Conductive perovskite type oxide having a thickness of about 5 to 100 nm
The lower electrode 58 is formed of a dielectric thin film made of
There is. Examples of the perovskite type oxide include SrR
uO_ThreeCan be used. Next, the lower electrode 5
On top of the dielectric thin film 60, 1 mol% Mn and 1 m
Containing ol% Si (Ba, Sr) in 10% excess
(Ba, Sr)_1.1TiO_zTargeting the sintered body
And contains Mn and Si by the RF sputtering method (B
a, Sr)_1.1TiO_zA thin film with a thickness of about 100 nm
Is deposited at. Then, as the upper electrode 62,
SrRuO which is a perovskite type oxide _ThreeAbout 50 to
The thin film capacitor 50 for DRAM is deposited with a thickness of 1000 nm.
Obtained.

In the thin film capacitive element 50 of this embodiment, when a DC voltage of 2 V is applied, the leakage current density is 10 ⁻⁸ A /
A characteristic of cm ² was obtained, and even if a DC voltage of 10 V was applied, dielectric breakdown did not occur. Thus, according to this example, it was confirmed that the leak current was reduced and the withstand voltage was improved.

<Other Embodiments> The present invention has many embodiments and can be variously modified based on the above disclosure. For example, the following is also included. (1) The above-mentioned constituent materials for the substrate, the bonding layer, the lower electrode, and the upper electrode are examples, and various materials can be used as necessary. Also, the laminated structure may be appropriately changed as necessary. (2) Specific applications of the dielectric thin film of the present invention include thin film capacitors, DRAM memory capacitors, multilayer capacitors, actuators, resonators, filters, piezoelectric components, and various other applications. (3) In the above embodiment, the dielectric thin film is composed of a single perovskite phase, but it may be composed of a mixture of an amorphous phase and a perovskite phase. (4) In the above embodiment, the dielectric thin film was formed by vapor phase growth such as sputtering or laser ablation at a substrate temperature in the range of 400 to 800 ° C., but in an atmosphere containing oxygen for the purpose of promoting crystallization. The dielectric thin film may be annealed. For example, it is held for 1 minute or more in an atmosphere containing oxygen of 10% or more and 0.01 atm or more and 1 atm or less. Also, first 150-600 ℃
The dielectric thin film may be formed at a low substrate temperature, and then the crystallization acceleration treatment may be performed at a substrate temperature of 450 to 800 ° C. in an atmosphere containing oxygen. The upper limit temperature is determined depending on the heat resistant temperature of the lower electrode.

[0034]

As described above, according to the present invention,
The perovskite (R x _M y _{O z)} oxide sintered body target, and Si as a sintering agent in the target, and is effective acceptor (or donor) elements in improving the electrical dielectric properties of the dielectric thin film Since the target is added and the target is used to form a dielectric thin film, the following effects are obtained. (1) Since the sintering density of the target is improved, the degree of freedom in selecting the types of elements that can be added to the target and the stoichiometric composition of the target is increased. Further, by using this target for each film forming method such as the sputtering method and the laser ablation method, it becomes possible to form a film while suppressing the generation of particles. Further, it becomes possible to cope with the increase in the size of the target. (2) By using a dielectric thin film in which an acceptor (or donor) element and Si are added, the electric dielectric properties are improved, such as the amount of leak current is reduced and the breakdown voltage is increased.

[Brief description of drawings]

FIG. 1 is a diagram showing a laminated structure according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a laminated structure of Example 1 of the present invention.

FIG. 3 is a diagram showing electrical characteristics of Example 1 and a comparative example in comparison.

FIG. 4 is a diagram showing the sintered densities of the sintered body targets of Example 1 and Comparative Example.

FIG. 5 is a cross-sectional view showing a laminated structure of Example 2 of the present invention.

FIG. 6 is a diagram showing an example of the sintering density of a non-stoichiometric Sr _x Ti _y O ₃ target.

[Explanation of symbols]

10 ... Thin film capacitive element 12 ... Substrate 14 ... Bonding layer (barrier layer or underlayer) 16 ... Lower electrode 18 ... Dielectric thin film 20 ... Upper electrode 30 ... Thin film capacitive element 32 ... Substrate 34 ... Bonding layer 36 ... Lower electrode 38 ... Dielectric thin film (Sr _1.2 TiO _z thin film) 40 ... Upper electrode 50 ... Thin film capacitive element 52 ... Substrate (wiring layer) 54 ... Plug 56 ... Bonding layer 58 ... Lower electrode 60 ... Dielectric thin film ((Ba, Sr) _1.1 TiO _z thin film) 62 ... Upper electrode

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[Procedure amendment]

[Submission date] September 10, 2001 (2001.9.1)
0)

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be amended] Claims

[Correction method] Change

[Correction content]

[Claims]

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) C23C 14/34 C23C 14/34 A 5F058 H01B 3/12 304 H01B 3/12 304 5G303 H01G 4/33 H01L 21/316 Y H01L 21/316 H01G 4/06 102 (72) Inventor Masayuki Fujimoto 6-16-20 Ueno Taito-ku, Tokyo Taiyo Denki Co., Ltd. F-term (reference) 4G031 AA03 AA04 AA05 AA06 AA07 AA08 AA09 AA11 AA12 AA13 AA14 AA16 AA19 AA21 AA22 AA23 AA25 AA26 AA30 BA09 4G047 CA05 CA07 CB04 CC02 CD02 4G048 AA03 AA05 AB01 AB05 AC02 AD02 AE05 4K029 AA06 BA50 BB02 B01 A58 A5 ABB5A58 A05 A58 A5 ABB5A5 A5A5 A5A5 A5 A6 A5 A5 A6 A5 A6 A5 A6 A5 A6 A5 A6 A5 A6 A5 A6 A5 A6 A6 A6 A6 A6 A5 A6 A5 A6 A6 A5 A6 A5 A6 A5 A6 A5 AB06 BA03 CA01 CB03 CB06 CB09 CB10 CB11 CB13 CB15 CB17 CB18 CB21 CB23 CB25 CB30 CB35 CB36 CB38 CB39 CB40

Claims (8)

[Claims] 1. A sintered body target mainly containing a perovskite structure represented by R _x M _y O _z, configuration the R, Sr, Ba, Ca, at least one element selected from Pb Then, M is composed of at least one element selected from Ti and Zr, and Mg, Mn, Cr, Co, V, Fe, Ni, Cu, Z
containing at least one element selected from n, Ho, Y, Er, La and Nb in an amount of 0.05 mol% or more and less than 10 mol%,
A sintered body target containing 0.1 mol% or more and less than 5 mol% of Si. Wherein the ratio of said _R x _M y O _Z x and y are 0.8
The sintered compact target according to claim 1, wherein the condition of ≤x / y≤1.5 is satisfied. 3. A dielectric thin film formed by a vapor phase growth method using the sintered body target according to claim 1. 4. A method for producing a dielectric thin film, which comprises using the sintered target according to claim 1 or 2 to produce a dielectric thin film by a vapor phase growth method. 5. The substrate temperature during the film formation is 400 ° C. to 80 ° C.
The method for producing a dielectric thin film according to claim 5, wherein the temperature is 0 ° C. 6. A method of manufacturing a dielectric thin film using the sintered body target according to claim 1, wherein the dielectric thin film is formed by a vapor phase growth method, and then in an atmosphere containing oxygen. A method for producing a dielectric thin film, characterized by promoting crystallization. 7. The substrate temperature at the time of forming the dielectric thin film is 1
The temperature is set to 50 to 600 ° C. and the crystallization is promoted at 4
The method for producing a dielectric thin film according to claim 6, wherein the method is performed in an oxygen atmosphere at 50 to 800 ° C. 8. An electronic component using the dielectric thin film according to claim 3.