JP2003051463A - Method of forming metal wiring and metal wiring substrate using the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of forming metal wiring and a metal wiring substrate, in which peeling of an underlying film from the substrate is prevented in forming metal wiring by a plating method, and disconnection in other wiring arranged on the upper side of the metal wiring is prevented, by avoiding increase in the total film thickness of the metal wiring. SOLUTION: The metal wiring is formed by a first step of forming a non- conductive oxide film 12 on an insulation substrate 10 through a wet film- forming technology, a second step of applying a plating catalyzer 14 to the non-conductive oxide film 12, a third step of forming a metal film 16 on the plating catalyzer 14 using a plating method, and a fourth step of patterning the metal film 16 to form wiring shapes.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device (L
CD), plasma display (PDP), electrochromic display (ECD), electroluminescent display (ELD), metal wiring used in flat panel displays, and various sensors such as two-dimensional image detectors, electronic The present invention relates to a method for manufacturing a metal wiring used for an electric circuit board or the like used in a device, and a metal wiring board using the method.

[0002]

2. Description of the Related Art Liquid crystal display devices (LCD: Liquid Crystal)
A flat panel display typified by Display) is usually constructed by a method in which a display material such as liquid crystal or discharge gas is sandwiched between a pair of substrates and a voltage is applied to the display material. Metal wiring made of a conductive material is arranged on at least one of the substrates.

For example, in the case of an active matrix drive type display, a gate electrode and a data electrode are arranged in a matrix on one active matrix substrate of a pair of substrates sandwiching a display material, and A thin film transistor (TFT) is provided at each intersection.
sistor) and a pixel electrode. Usually, the gate electrode and the data electrode are formed of a metal material such as tantalum (Ta), aluminum (Al), molybdenum (Mo), and are formed by a dry film forming method such as a sputtering method.

By the way, when such a flat panel display is attempted to have a large area and high definition, the driving frequency is increased and the resistance and parasitic capacitance of the metal wiring are increased, so that the delay of the driving signal is delayed. It becomes a big problem.

Therefore, in order to solve the drive signal delay problem, aluminum (Al: which is a conventional wiring material) is used.
Bulk resistivity 2.7 μΩ · cm, α-tantalum (α-
Ta: bulk resistivity 13.1 μΩ · cm), instead of molybdenum (Mo: bulk resistivity 5.8 μΩ · cm),
Copper with lower electrical resistance (Cu: Bulk resistivity 1.7 μΩ
Attempts have been made to use (cm) as a wiring material. For example, "Low Resistance Copper Address Line for TFT-LC
D "(Japan Display '89 p.498-501) discloses the results of a study on a TFT-LCD using copper (Cu) as a gate electrode material. According to this document, since the copper (Cu) film formed by the sputtering method has poor adhesion to the underlying glass substrate, the adhesion is improved by interposing a metal film such as tantalum (Ta) under the substrate. It clearly states that it is necessary.

However, in the case of the wiring structure disclosed in the above-mentioned document, separate dry film forming process and etching process are required for the copper (Cu) film and the underlying metal film such as tantalum (Ta), There is a problem that the number of processes increases and the cost increases.

Therefore, for example, Japanese Patent Laid-Open No. 4-232922.
In the publication, a transparent electrode made of ITO (indium-tin oxide) is used as a base film,
A method of forming a metal film of copper (Cu) or the like on the base film by a plating technique has been proposed. According to the present technology, the plating metal can be selectively formed only on the ITO film, and therefore the patterning process only needs to be performed on the ITO film of the transparent electrode, and the copper (Cu) wiring can be formed efficiently even in a large area. The effect that can be formed is specified. Further, a metal film of nickel (Ni) or the like having good adhesion to ITO is formed of ITO and copper (Cu).
It also describes a structure interposed between and.

On the other hand, not limited to the above-mentioned Japanese Patent Laid-Open No. 4-232922, the process of the active matrix substrate is shortened, the resistance of the transparent electrode of a simple matrix type LCD or the like is lowered, and the wettability of the solder on the ITO film is improved. For various purposes, a method has been proposed in which a metal film of nickel (Ni), gold (Au), copper (Cu) or the like is formed on a patterned ITO film by a plating technique (for example, Japanese Patent Laid-Open No. Hei 10 (1999) -242242). 2-83533, JP-A-2-223924, JP-A-62-288883, and JP-A-1-9.
6383).

Further, Japanese Patent Application Laid-Open No. 2001-32086 proposes to form an ITO film from a sputtered ITO film by a method using a wet film forming technique such as a sol-gel method.

The wet film forming technique is a technique of forming a film by a spin coating method or a dipping method without using a vacuum device, and then baking the film. When this method is used, advantages such as cost reduction and ease of large-screen film formation can be obtained. The spin coating method is a coating method in which a sol-state paint is dropped on a rotating substrate and is spread by centrifugal force when the substrate is coated. Further, the dipping method is an immersion method in which a substrate is immersed in a sol-state paint and then pulled up when the substrate is coated.

It has also been reported that the use of a photosensitive sol-gel film has the merit that film formation and patterning are completed only by a photo process, and an etching apparatus is not required.

Further, in this method, since the sol-gel film is porous, there is a merit that the adhesive force with the plating film is also high.

[0013]

However, in the case of the technique disclosed in the above-mentioned Japanese Patent Laid-Open No. 2001-32086, since the sol-gel film, which is the base film, and the metal film are well adhered, the base film and the substrate are reversed. If the adhesion to the substrate is poor, or if the underlying film is attacked by the plating bath used to form the metal wiring on the underlying film, the portion that is a singular point such as the pattern edge of the underlying film and the substrate There is a problem that the base film peels off from the interface with.

Further, if the film thickness of the base film is large, the film thickness of the entire wiring also becomes large, and another wiring is formed on the upper layer of the wiring as in the case of using this wiring as the gate wiring of the LCD. In that case, there is also a problem that the other wiring is disconnected at the overcoming portion.

Further, in the above-mentioned method, since the step of patterning the base film formed by the wet film forming technique such as the sol-gel method and then forming the metal film thereon, the step of patterning the base film is performed. It is necessary and has a problem that the process becomes complicated.

Further, when the base film is made of a photosensitive sol-gel material, there are problems that the liquid stability is lowered and the cost is increased as compared with a material which is not photosensitive.

The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to prevent the base film from peeling off from the substrate when the metal wiring is formed by a plating method, and It is possible to prevent the total film thickness from increasing and prevent disconnection of other wirings arranged on the upper side of the metal wiring, or in addition to the above, it is possible to avoid increase in process complexity and manufacturing cost. A metal wiring manufacturing method and a metal wiring substrate using the method are provided.

[0018]

In order to solve the above-mentioned problems, a method of manufacturing a metal wiring according to the present invention comprises a first step of forming a non-conductive oxide film on an insulating substrate by a wet film forming technique, Second, applying a plating catalyst on the non-conductive oxide film
And the third step of forming a metal film on the plating catalyst by a plating method, and the fourth step of patterning the metal film into a wiring shape.

According to the above invention, since the non-conductive oxide film serving as the base film of the metal film is formed on the entire insulating substrate by the wet film forming technique, the non-conductive oxide film is not patterned. The non-conductive oxide film has no singular point called a pattern edge. Therefore, it is possible to prevent the occurrence of peeling due to the presence of the pattern edge.

Further, as described above, it is possible to omit the patterning process of the base of the metal film, so that the process can be simplified by eliminating the patterning process.

Further, since the layer to which the plating catalyst is applied is considerably thin as compared with the base film formed by the wet film forming technique, the film thickness of the entire metal wiring is also thin. For this reason,
In the case where there is an intersection of wirings such as an LCD, there is a great merit that the disconnection of other wirings formed on the upper side of the metal wirings is eliminated.

Further, since the non-conductive oxide film is used as the base film of the metal film, there is no leakage of current and no capacitance is formed between the other metal wiring and the base film. Does not reach.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from being peeled off from the insulating substrate, and the metal film is disposed above the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring capable of preventing disconnection of another wiring to be produced.

Further, in order to solve the above-mentioned problems, the method for manufacturing a metal wiring of the present invention comprises the first step of forming a non-conductive oxide film on an insulating substrate by a wet film forming technique, and the above-mentioned non-conductive film. A second step of applying a photosensitive plating catalyst on the oxide film, a third step of patterning the photosensitive plating catalyst into a wiring shape, and a plating method on the photosensitive plating catalyst patterned into the wiring shape. And a fourth step of selectively forming a metal film by.

According to the above invention, since the photosensitive plating catalyst is used in the step of applying the plating catalyst, the etching step is not necessary and the step is simplified.

Further, it is possible to selectively form a metal film on the catalyst-applied surface, which makes it possible to reduce the metal material and the cost by eliminating the need for an etching apparatus.

Therefore, when the metal wiring is formed by the plating method, it is arranged on the upper side of the metal wiring while preventing the base film from peeling off from the substrate and avoiding an increase in the thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring, which can prevent disconnection of other wirings, and can avoid the complexity of the process and an increase in manufacturing cost.

Further, the method for producing a metal wiring of the present invention is characterized in that, in the method for producing a metal wiring, the wet film forming technique used in the step of forming the non-conductive oxide film is a sol-gel method. .

The sol-gel method is a type of wet film forming technique, in which a metal organic compound or an inorganic compound is made into a solution, and the hydrolysis / polycondensation reaction of the compound is allowed to proceed in the solution to form the sol as a gel. This is a method of solidifying and heating the gel to form an oxide solid.

By using the above method, a non-conductive oxide film can be formed without applying a vacuum film forming apparatus, simply by coating a sol-gel solution on an insulating substrate such as glass and baking it. It is inexpensive and can easily cope with large-area film formation.

Further, in the sol-gel method, it is possible to form a porous oxide film having fine holes in a mesh shape as compared with the smooth surface of the oxide film formed by the vacuum film forming apparatus. .

Therefore, when a metal film is plated on the non-conductive oxide film obtained by the sol-gel method, the fine holes of the non-conductive oxide film exert an anchoring effect to form a plating film with excellent adhesion. Obtainable. This enables electroless Cu plating on the inorganic insulating film, which has been difficult in the past.

Further, in the method for producing a metal wiring of the present invention, in the method for producing a metal wiring, the wet film forming technique used in the step of forming the non-conductive oxide film is a chemical deposition method or a liquid phase deposition method. It is characterized by being either one.

The chemical deposition method is a method of immersing a substrate in an aqueous solution and using an oxidation-reduction reaction in water to deposit an oxide film on the substrate. In addition, liquid phase deposition method (LPD method:
Liquid Phase Deposition) is a method of depositing an oxide film on a substrate by using a hydrolysis equilibrium reaction of a metal fluoro complex or hydrosilicofluoric acid.

According to the above invention, by using such a chemical deposition method or liquid phase deposition method, a non-conductive oxide film can be formed by simply immersing an insulating substrate in an aqueous solution without using a vacuum film forming apparatus. Since it is possible to form a film, it is possible to inexpensively and easily cope with a large-area film formation.

Further, in the non-conductive oxide film obtained by the chemical deposition method, crystal grains grow with the metal catalyst deposited on the insulating substrate as the nucleus, and thus the oxide film formed by the vacuum device. Compared with, the surface is more uneven. Therefore,
If a metal film is plated on the non-conductive oxide film obtained by the chemical deposition method, the unevenness of the surface of the non-conductive oxide film exerts an anchoring effect, and a plating film with excellent adhesion can be obtained. .

The method of manufacturing a metal wiring according to the present invention is characterized in that, in the method of manufacturing a metal wiring, the non-conductive oxide film is transparent.

According to the above-mentioned invention, since the non-conductive oxide film is formed on the entire surface of the insulating substrate, when it is not transparent, the LCD can be used only for the reflective LCD, and its use is limited. If it is transparent, it can be used for all transmissive display elements using glass as a substrate, which is a great advantage.

Further, the method for producing a metal wiring of the present invention is characterized in that, in the method for producing a metal wiring, the photosensitive plating catalyst contains palladium (Pd).

According to the above invention, palladium (Pd)
Exhibits catalytic properties for most platings, so copper (Cu), nickel (Ni), gold (Au), silver (A)
g), there is an advantage that plating with various metals such as palladium (Pd) becomes possible.

Further, in the method for producing a metal wiring of the present invention, in the above-mentioned method for producing a metal wiring, the metal film is mainly made of nickel (Ni), copper (Cu), gold (Au) and silver (Ag). It is characterized in that it is a single-layer film of any one of them or a multi-layer film containing at least one of these single-layer films.

According to the above invention, nickel (Ni),
Both copper (Cu) can be deposited on the photosensitive plating catalyst with good adhesion, and further, electroless plating can be selectively performed. Further, copper (Cu) and gold (Au) have a small specific resistance, and a low resistance metal wiring can be realized. In particular, if nickel (Ni) is formed on the photosensitive plating catalyst, and if a film of copper (Cu), gold (Au), copper (Cu) / gold (Au), or the like is further formed thereon, the adhesion is improved. It is possible to realize a metal wiring with good low resistance. Further, for example, nickel (Ni) -rhenium (Re) is formed on the photosensitive plating catalyst.
-Phosphorus (P) is formed, copper (Cu), copper (Cu) / gold (Au) is further formed thereon, and nickel (Ni) -rhenium (Re) -phosphorus (P) is further formed thereon. ), It is possible to form a copper (Cu) wiring surrounded by nickel (Ni) -rhenium (Re) -phosphorus (P) which is a barrier metal.

Further, the metal wiring board of the present invention is characterized in that it is manufactured by using the method for manufacturing a metal wiring as described in any one of the above-mentioned inventions, in order to solve the above problems.

The metal wiring board of the above invention can obtain the same effects as those described in any one of the above methods for producing a metal wiring.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from peeling off from the substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. In addition to the above, it is possible to provide a metal wiring board that can prevent the disconnection of other wirings, and can avoid the complexity of the process and the increase of the manufacturing cost.

[0046]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] The following will describe one embodiment of the present invention with reference to FIG.

As shown in FIGS. 1 (a) to 1 (d), the method of manufacturing a metal wiring according to the present embodiment forms a non-conductive oxide film 12 on an insulating substrate 10 by a wet film forming technique. The second step of applying the plating catalyst 14 on the non-conductive oxide film 12, the third step of forming the metal film 16 on the plating catalyst 14 by a plating method, and the metal film. And a fourth step of patterning 16 into a wiring shape. Hereinafter, each step will be described in detail.

(First Step) First, in the first step
Is made of, for example, a glass substrate as shown in FIG.
On the insulating substrate 10 by sol-gel method
SiO as the film 12 ₂(Silicon oxide film) is formed.
At this time, the sol-gel solution is made to have an appropriate viscosity with alcohol.
Dilute and spin coat to a thickness of about 0.2 μm
Clothe. And after drying at 150 ℃, at 500 ℃
Bake. As a result, a porous film with a thickness of about 0.1 μm
SiO₂The non-conductive oxide film 12 made of is completed.

The insulating substrate 1 is used in this embodiment.
Although a glass substrate is used as 0, it is not necessarily limited to glass. For example, in addition to an inorganic substrate such as ceramic,
Epoxy, PES (polyether sulphone), PET (polyethylene terephthalate), ABS (Acrylonitrile-)
Butadience-Styrene: Acrylonitrile-Butadiene-
It is also possible to use a substrate or film of various organic substances such as a styrene copolymer) and PC (polycarbonate).

The non-conductive oxide film 1 made of SiO ₂
2 was transparent. As a result, it can be applied to all transmissive display devices that use glass as a substrate. However, when it is not necessary for the reflective liquid crystal display device to transmit light, a non-transparent one may be used.

As the wet film forming technique in the first step, in addition to the sol-gel method, a chemical deposition method in an aqueous solution, a liquid phase deposition method, or a chemical atomization deposition method using a mist of a solution. (CMD method: Chemical Mist Deposition) or a spray method may be used.

The sol-gel method is a method in which a metal organic compound or an inorganic compound is used as a solution, the hydrolysis / polycondensation reaction of the compound is allowed to proceed in the solution to solidify the sol as a gel, and an oxide solid is produced by heating the gel. Is the way to do it. A metal alkoxide capable of polycondensation reaction is suitable as a starting material, but a metal salt or a metal acetylacetonate complex can be used together with the metal alkoxide. Various alcohols are generally used as the solvent. After diluting the metal alkoxide with a solvent, water is added to cause a hydrolysis / polycondensation reaction to form a sol. Then, the sol is applied to the substrate to form a gel film. Examples of the coating method include a dipping method, a spin coating method, and a meniscus coating method. After that, the gel film is dried, and then heat treatment is performed at about 400 ° C. to remove the residual organic matter, thereby forming an oxide film. Usually, the gel film after drying becomes a porous body (xerogel), and tends to be a film having fine pores in a mesh form. By adjusting the composition of the sol-gel solution and the firing conditions, it is possible to form any film from a porous film having fine pores in a network to a dense film with few pores.

By using such a sol-gel method, the non-conductive oxide film 12 can be formed only by coating and baking the sol-gel solution on the insulating substrate 10 such as glass.
It is possible to form a film without using a vacuum device, and it is possible to easily cope with an inexpensive film formation on a large area.

For details of the types and principles of oxide films that can be formed by the sol-gel method, see "Science of the sol-gel method" (published by Agne Jofusha, author: Sakuo Sakuo). It is described in detail.

(Second Step) In the second step, as shown in FIG.
As shown in (b), the plating catalyst 14 is applied on the non-conductive oxide film 12 obtained in the first step.

In the present embodiment, as the palladium chloride-containing liquid, the trade name "Emplate Activator 4" is used.
40 (Meltex) "to 30 mL / L,
The plating catalyst 14 made of palladium (Pd) ions is deposited on the non-conductive oxide film 12 by immersing it in a 1 mol / L (1 N) aqueous solution of potassium hydroxide (KOH) adjusted to pH 5.5. Let

The palladium chloride-containing liquid is not limited to the above, and other catalyst-applying methods such as colloids containing palladium (Pd) ions or organic complexes may be used. If necessary, palladium (P
d) Palladium (P
d) The ions may be reduced.

(Third Step) In the third step, as shown in FIG.
As shown in (c), a metal film 16 is formed by plating on the plating catalyst 14 obtained in the second step.

In this embodiment, first, an electroless nickel (Ni) plating solution containing sodium hypophosphite as a reducing agent is used to form a nickel (Ni) film with a thickness of about 0.3 μm. . In the electroless plating, the metal film 16 can be selectively formed only on the base having a catalytic property, so that nickel (Ni) can be selectively formed on the catalyst application surface.
A film can be deposited.

The electroless nickel (Ni) plated film thus obtained is affected by the reducing agent to produce nickel (N).
Since it becomes a co-deposition film of i) and phosphorus (P), the surface resistance of the film is as high as 4 to 5 Ω / □, which limits its use for metal wiring. Therefore, in order to reduce the resistance of the nickel (Ni) film, gold (Au) plating is performed on the nickel (Ni) film as needed.

Gold (Au) plating is capable of electroless displacement plating on a nickel (Ni) film. Therefore,
For example, about 0.05 μm from the surface of the nickel (Ni) film
By replacing gold with gold (Au), the sheet resistance of the film can be reduced to about 0.5 Ω / □.

When it is necessary to reduce the resistance, gold (A
u) may be formed into a thick film by electroplating, or a low resistance metal such as copper (Cu) may be formed onto the gold (Au) film by electrolytic or electroless plating. However, if gold (Au) is plated thickly, the cost increases, so it is desirable to reduce the resistance by copper (Cu) plating. For example, gold (Au) / nickel (Ni) / copper (Cu) on the ITO film
When the film is formed by electroplating to a thickness of about 0.15 μm, the sheet resistance of the film is reduced to about 0.1 Ω / □, and it can be sufficiently used as a metal wiring for a large-scale high-definition flat panel display.

Although the metal wiring structure is a laminated film of copper (Cu) / gold (Au) / nickel (Ni) in the present embodiment, the present invention is not limited to this, and a silver (Ag) single layer, Copper (Cu) / silver (Ag), copper (Cu) single layer, copper (C)
u) / nickel (Ni), gold (Au) / nickel (N)
As in i), the structure can be changed depending on the application.

At this time, the surface of the metal wiring is copper (Cu).
However, a barrier metal is further laminated to prevent the oxidation of copper (Cu) and the diffusion of copper (Cu), and an oxygen barrier film is coated to prevent the oxidation until the next step. It is also useful to protect

Further, the metal film 16 formed in this step is
It may be a single layer or a laminated film of the metal films 16 having different roles. For example, nickel (Ni) having good adhesion and then gold (Au) having low resistance may be laminated by displacement plating. Further, copper (Cu) having lower resistance and lower cost may be laminated using electroless plating or electroplating.

As described above, the metal wiring of the present embodiment does not use the vacuum film forming apparatus at all, so that it is possible to obtain a sufficient cost reduction effect as compared with the method shown in the conventional example. Further, since the wet film forming technique is easier to form a large area film than the vacuum film forming technique, it can be easily applied to a large area substrate.

As the plating method, electroless plating is mainly used in the present embodiment, but plating is roughly divided into electroless plating and electroplating. In the case of electroplating, a metal serving as an anode and an electrode to be plated serving as a cathode are placed in a plating solution in which metal ions are dissolved, and a direct current is passed through the plating solution to deposit the metal film 16 on the surface of the cathode.

On the other hand, in the case of electroless plating such as reduction plating and displacement plating, it is possible to deposit the metal film 16 without passing a current through the plating solution. Therefore,
Even if the oxide film formed in the first step is non-conductive, the metal film 16 can be deposited.

It is possible to form more various plating films by combining these two plating methods.

(Fourth Step) Next, in the fourth step, as shown in FIG. 1D, the metal film 16 formed in the third step is patterned.

As a patterning method, the metal film 16 is used.
A positive type resist is applied on top by spin coating to a thickness of about 2 μm. Next, prebaking is performed at 80 ° C., and then ultraviolet irradiation is performed through a photomask. afterwards,
By performing development processing and post-baking at 120 ° C., a resist pattern having a wiring shape is formed on the metal film 16. By immersing the insulating substrate 10 having the metal film 16 on which the resist pattern is formed in an etching solution, the metal film 16 in a portion not covered with the resist is etched.
To etch. For example, when etching nickel (Ni) or the like, nitric acid or the like can be used to cleanly etch.

Finally, a metal wiring pattern can be formed by removing the resist using a resist stripping solution.

The present invention is not limited to the above embodiment, but various modifications can be made within the scope of the present invention. For example, in the above embodiment, the sol-gel method was used as the wet film forming technique, but the invention is not particularly limited to this, and it is also possible to use a chemical deposition method or a liquid phase deposition method.

A method of forming the non-conductive oxide film 12 by the liquid phase deposition method will be described below.

(First Step) First, as the first step,
On the insulating substrate 10 made of a glass substrate with the product name "# 1737 (manufactured by Corning)", SiO _{2 is formed} by the liquid phase deposition method
A non-conductive oxide film 12 made of is formed.

The liquid phase deposition method (LPD method) is a method of depositing an oxide film (SiO ₂ ) on a substrate by using a hydrolysis equilibrium reaction of a metal fluoro complex or hydrofluorosilicic acid.

As a method for forming an oxide film in an aqueous solution, there is a method such as a chemical deposition method other than the above liquid phase deposition method.

The chemical deposition method is a method of immersing a substrate in an aqueous solution and depositing an oxide film on the substrate by using a redox reaction in aqueous solution, and there are an anodic deposition method and a cathodic deposition method.
By using an oxidizing agent or a reducing agent, respectively,
It is possible to deposit an oxide film on the substrate electrolessly.

For example, when the substrate to which the catalyst is attached is immersed in an aqueous solution in which a metal nitrate and a reducing agent such as dimethylamine borane (DMAB) coexist, nitric acid-nitrous acid is converted by electrons supplied from the reducing agent. The reduction reaction is driven,
As a result, a metal oxide film or a hydroxide film is deposited. For example, by using zinc nitrate as the metal nitrate, a high resistance zinc oxide film is deposited on the substrate.

As described above, if the chemical deposition method is used as a method for forming an oxide film in an aqueous solution, the oxide film can be formed simply by immersing the glass substrate in the aqueous solution. For this reason, it is possible to form a film without using a vacuum device, and it is possible to easily cope with large-area film formation at low cost.

(Second Step) In the second step, the second step
The plating catalyst 14 is applied onto the non-conductive oxide film 12 obtained in the first step by the same method as in the step.

(Third Step) In the third step, the third step
The metal film 16 is formed by plating on the plating catalyst 14 obtained in the second step by the same method as in the step.

As a method for forming the plating film, the same method as in the third step can be used. Nickel (Ni) / photosensitive palladium (Pd) catalyst / SiO ₂ , gold (Au) /
Nickel (Ni) / photosensitive palladium (Pd) catalyst / S
iO ₂ , copper (Cu) / gold (Au) / nickel (Ni) /
Photosensitive palladium (Pd) catalyst / SiO ₂ , copper (Cu)
/ Nickel (Ni) / Photosensitive palladium (Pd) catalyst /
A composition of SiO ₂ , copper (Cu) / photosensitive palladium (Pd) catalyst / SiO _2, etc. is possible. In particular, when a film structure using copper (Cu) or gold (Au) is used, the surface resistance of the film is about 0.1 Ω / □, which can be sufficiently used as a metal wiring for a large-scale high-definition flat panel display. Will be things.

In this embodiment, since the non-conductive oxide film 12 is deposited in the aqueous solution, it can be formed at a low temperature of 100 ° C. or lower. Further, since the metal film 16 formed by plating on the non-conductive oxide film 12 can also be formed at a temperature of 100 ° C. or lower, all except the auxiliary baking after the film formation for improving the adhesion. The metal wiring can be formed by a low temperature process of 100 ° C. or less. Therefore,
Not limited to glass substrates, PES, epoxy, ABS,
It is possible to easily form metal wiring on an organic substrate such as PC or PET or a film.

(Fourth Step) Next, in the fourth step, the metal film 16 formed in the third step is patterned by the same method as in the fourth step.

As described above, in the method for manufacturing the metal wiring of the present embodiment, the non-conductive oxide film 12 serving as the base film of the metal film 16 is formed on the entire insulating substrate 10 by the wet film forming technique. Since the non-conductive oxide film 12 is not patterned, the non-conductive oxide film 12 has no singular point called a pattern edge. Therefore, it is possible to prevent the occurrence of peeling due to the presence of the pattern edge.

Further, as described above, it is possible to omit the patterning process of the base of the metal film 16,
It becomes possible to simplify the process by eliminating the patterning process.

Further, since the layer to which the plating catalyst 14 is applied is considerably thinner than the base film formed by the wet film forming technique, the film thickness of the entire metal wiring is also thin. For this reason, in the case where there is an intersection of wirings such as an LCD, there is a great merit that the disconnection of the other wirings caused by getting over the other wirings formed on the upper side of the metal wiring is eliminated.

Further, since the non-conductive oxide film 12 is used as the base film of the metal film, there is no adverse effect such as leakage of current and formation of capacitance between the other upper metal wiring and the base film. Does not reach.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from being peeled off from the insulating substrate 10, and the metal film is disposed on the upper side of the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring capable of preventing disconnection of another wiring provided.

Further, in the method of manufacturing the metal wiring of this embodiment, the wet film forming technique used in the step of forming the non-conductive oxide film 12 is the sol-gel method.

Therefore, by using the above method, the non-conductive oxide film 12 is formed only by coating the sol-gel solution on the insulating substrate 10 such as glass and baking it without using a vacuum film forming apparatus. Therefore, it is possible to easily cope with large-area film formation at low cost.

Further, in the sol-gel method, it is possible to form a porous oxide film having fine holes in a mesh shape as compared with the smooth surface of the oxide film formed by the vacuum film forming apparatus. .

Therefore, when the metal film 16 is plated on the non-conductive oxide film 12 obtained by the sol-gel method, the fine holes of the non-conductive oxide film 12 exert an anchoring effect, resulting in very good adhesion. A plated film can be obtained.
This enables electroless Cu plating on the inorganic insulating film, which has been difficult in the past.

Further, in the method of manufacturing the metal wiring of this embodiment, the wet film forming technique used in the step of forming the non-conductive oxide film 12 is either the chemical deposition method or the liquid phase deposition method.

Therefore, by using such a chemical deposition method or liquid phase deposition method, the non-conductive oxide film 12 is formed only by immersing the insulating substrate 10 in an aqueous solution without using a vacuum film forming apparatus. Therefore, it is possible to easily cope with low cost and large area film formation.

The non-conductive oxide film 12 obtained by the above chemical deposition method is formed by a vacuum apparatus because crystal grains grow with the metal catalyst attached on the insulating substrate 10 as a nucleus. The surface is more uneven than the oxide film. Therefore, the non-conductive oxide film 1 obtained by the chemical deposition method
2 is plated with a metal film 16, the non-conductive oxide film 12
The surface unevenness of (2) exerts an anchoring effect, and a plating film having very good adhesion can be obtained.

Further, in the method for manufacturing the metal wiring of this embodiment, the non-conductive oxide film 12 is transparent.

Therefore, the present invention can be applied to all transmissive display elements using glass as a substrate, which is a great advantage.

Further, in the method for manufacturing a metal wiring of this embodiment, the metal film 16 contains nickel (Ni), copper (Cu), gold (Au), and silver (Ag) as main components, and a single layer of either of them is used. It is a film or a multilayer film including at least one layer of these monolayer films.

Since copper (Cu) and gold (Au) have a small specific resistance, a low resistance metal wiring can be realized.

Further, the metal wiring of the present embodiment does not use a vacuum film forming apparatus at all, so that a sufficient cost reduction effect can be obtained as compared with the method shown in the conventional example. Further, since the wet film forming technique is easier to form a large area film than the vacuum film forming technique, it can be easily applied to a large area substrate. Furthermore, by taking advantage of the advantage of not using a vacuum system, it is possible to form a wiring by a roll-to-roll method with good productivity while sequentially transporting a film base material wound in an extremely long roll shape.

[Second Embodiment] The following will describe another embodiment of the present invention in reference to FIG. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment will be designated by the same reference numerals, and the description thereof will be omitted.

The various characteristic points described in the first embodiment can be applied in combination with the present embodiment.

As shown in FIGS. 2 (a) to 2 (d), the method of manufacturing the metal wiring of the present embodiment forms the first non-conductive oxide film 12 on the insulating substrate 10 by the wet film forming technique. Step, a second step of applying the photosensitive plating catalyst 18 on the non-conductive oxide film 12, and the photosensitive plating catalyst 1
Third step of patterning 8 into a wiring shape, and fourth step of selectively forming the metal film 16 on the photosensitive plating catalyst 18 patterned into the wiring shape by a plating method
And the process of. Hereinafter, each step will be described in detail.

(First Step) First, in the first step, as shown in FIG. 2A, a non-conductive oxide made of SiO _{2 is} formed on an insulating substrate 10 made of, for example, a glass substrate by a sol-gel method. The film 12 is formed. At this time, the sol-gel solution is diluted with alcohol to an appropriate viscosity, and applied by spin coating to a thickness of about 0.2 μm. And 1
After drying at 50 ° C, firing is performed at 500 ° C. As a result, the non-conductive oxide film 12 made of porous SiO ₂ and having a thickness of about 0.1 μm is completed.

(Second Step) In the second step, as shown in FIG.
As shown in (b), the photosensitive plating catalyst 18 is applied on the non-conductive oxide film 12 made of SiO ₂ obtained in the first step.

The photosensitive plating catalyst 18 is a plating catalyst precursor, that is, a metal, colloid or compound which serves as a catalyst.
A photosensitive material containing ions is exposed to light such as ultraviolet rays in a pattern corresponding to the wiring shape, and the plating catalyst precursor causes a chemical reaction by this exposure, and the plating catalyst is deposited only in the exposed area. Is.

In this embodiment, as the photosensitive plating catalyst 18, palladium acetylacetonate dissolved in chloroform is used, and the film formation is performed by the spin method. When the film is formed by the spin method, the film thickness is about 100Å or less. After that, baking before exposure is performed.

Although the photosensitive plating catalyst 18 contains palladium (Pd) in the present embodiment, the present invention is not limited to this. For example, nickel (Ni), copper (C
A material containing u) or silver (Ag) may be used.

The photosensitive plating catalyst 18 is exposed to light after coating.
A catalyst pattern can be formed by performing development, which is very effective as a method for selectively forming a base of metal wiring.

(Third Step) In the third step, as shown in FIG.
As shown in (c), a photosensitive plating catalyst 1 comprising the photosensitive plating palladium (Pd) catalyst obtained in the second step.
8 is patterned.

Because of its photosensitivity, as a patterning method, a pattern is formed by performing exposure with an exposure device such as a stepper using a mask having a desired pattern, followed by development and baking.

As a specific method for patterning the plating catalyst, a photosensitive catalyst is applied by a spin method and then prebaked. Then, exposure is performed with a pattern corresponding to the wiring shape. By performing the exposure, metallic palladium (Pd) is deposited on the base film only in the exposed region.

Thereafter, the photosensitive plating catalyst 18 in the unexposed area is washed with an organic solvent, in this embodiment, chloroform is used as the solvent, so that chloroform is used as the organic solvent, and post-baking is performed.
A palladium (Pd) pattern is formed.

The organic solvent is not limited to the above, and is a photosensitive catalyst prepared by dissolving ferric oxalate and palladium chloride in a potassium hydroxide solution, or ferric oxalate, or an oxalate salt such as ruthenium oxalate. It is also possible to use a photosensitive catalyst solution containing palladium chloride and aqueous ammonia.

In this case, it is also effective to add a hydrophilic binder such as polyvinyl alcohol to the above-mentioned photosensitive catalyst liquid so that the photosensitive catalyst can be easily applied uniformly on the substrate.

Furthermore, there is also a method of selectively depositing silver (Ag) by utilizing the reduction reaction of silver (Ag) ions by ultraviolet irradiation. There is also a method of using a material in which a metal serving as a catalyst, a compound thereof, ions, and colloid are dispersed in a photosensitive resin such as photoresist.

(Fourth Step) Next, in the fourth step, as shown in FIG. 2D, the first embodiment is formed on the pattern of the photosensitive plating catalyst 18 obtained in the third step. The metal film 16 is formed by a plating method by the same method as in the third step.

The plating film formed on the photosensitive palladium (Pd) catalyst is not limited to the above, but various metals such as nickel, cobalt, tin, gold, copper, silver and palladium, or a combination thereof can be used. It is also possible to use.

As described above, in the method of manufacturing a metal wiring according to the present embodiment, since the photosensitive plating catalyst 18 is used in the step of applying the plating catalyst, the etching step is not necessary and the process is simplified. Become Further, the metal film 16 can be selectively formed on the catalyst-applied surface, which has a large merit such as reduction of metal material and cost reduction by eliminating the need for an etching apparatus.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from being peeled off from the substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring, which can prevent disconnection of other wirings, and can avoid the complexity of the process and an increase in manufacturing cost.

Further, in the method for manufacturing the metal wiring of this embodiment, the photosensitive plating catalyst 18 contains palladium (Pd).

Palladium (Pd) has a catalytic property for most platings, and therefore copper (Cu) and nickel (N
There is an advantage that plating with various metals such as i), gold (Au), silver (Ag), and palladium (Pd) becomes possible. However, in addition to palladium (Pd), nickel (N
You may use the photosensitive plating catalyst 18 containing the component used as the catalyst of plating such as i), copper (Cu), and silver (Ag).

Further, in the method for manufacturing a metal wiring of this embodiment, the metal film 16 contains nickel (Ni), copper (Cu), gold (Au), and silver (Ag) as main components, and a single layer of either of them is used. It is a film or a multilayer film including at least one layer of these monolayer films.

Therefore, nickel (Ni), copper (Cu)
Both can form a film on the photosensitive plating catalyst 18 with good adhesion, and can also selectively perform electroless plating.

Further, copper (Cu) and gold (Au) have a small specific resistance and a low resistance metal wiring can be realized. In particular, a film of nickel (Ni) is formed on the photosensitive plating catalyst 18, and copper (Cu), gold (Au), copper (C) is further formed thereon.
By forming a film of u) / gold (Au) or the like, it is possible to realize a metal wiring with good adhesion and low resistance.

Further, for example, a film of nickel (Ni) -rhenium (Re) -phosphorus (P) is formed on the photosensitive plating catalyst 18, and copper (Cu), copper (Cu) / gold (A) is further formed thereon.
u) and then nickel (Ni) -rhenium (Re) -phosphorus (P) is deposited thereon to form a barrier metal nickel (Ni) -rhenium (Re)-.
It becomes possible to form a copper (Cu) wiring surrounded by phosphorus (P).

In addition, in the first embodiment and the present embodiment, the non-conductive oxide film 1 obtained by the wet film forming technique is used.
2. The metal wiring is formed by forming the metal film 16 on the plating catalyst 14 or the photosensitive plating catalyst 18 by the plating method. Therefore, since no vacuum film forming apparatus is used at all, a sufficient cost reduction effect can be obtained as compared with the method shown in the conventional example. Further, since the wet film forming technique is easier to form a large area film than the vacuum film forming technique, it can be easily applied to a large area substrate.

Therefore, the present invention can be widely applied to active matrix drive type and passive matrix drive type flat panel displays in general, flat panel shaped two-dimensional image detectors, or any electronic equipment provided with metal wiring. is there.

The various characteristic points described in the first embodiment can be applied in combination with the present embodiment. At that time, the first embodiment is described.
Each effect described in can be obtained.

[Third Embodiment] The following will describe still another embodiment of the present invention in reference to FIG. For convenience of explanation, members having the same functions as the members shown in the drawings of the first and second embodiments will be designated by the same reference numerals and the description thereof will be omitted.

The various characteristic points described in the first and second embodiments can be applied in combination with this embodiment.

In the present embodiment, as shown in FIG. 3, the metal wiring described in the first and second embodiments is used as an active metal wiring substrate for an LCD (Liquid Crystal Display). A case where the gate wiring 20 of the matrix substrate is used will be described.

As shown in the figure, in the active matrix substrate, a gate wiring 20 and a gate electrode 21 are formed on an insulating substrate 10 made of a glass substrate, and a conventional aluminum (A) film formed by a sputtering method is formed.
It is possible to simply apply the metal wiring shown in the first and second embodiments instead of the metal wiring such as l), tantalum (Ta), and molybdenum (Mo).

Furthermore, silicon nitride (SiN
The gate insulating film 22 made of x) is formed. And
In the TFT (Thin Film Transistor) element 24 portion, a channel layer made of a-Si: H (hydrogenated amorphous silicon) 32,
A contact layer made of n + type a-Si: H34, and a source electrode 26 and a drain electrode 28 made of metal such as molybdenum (Mo) are formed. In addition, a transparent electrode or a reflective electrode is formed in the pixel portion. An insulating protective film 30 made of silicon nitride (SiNx) or an organic insulating film is formed on the TFT element portion 24 and the bus line portion.

The active matrix substrate thus obtained can be used, for example, in a transmissive LCD, a reflective LCD, or a two-dimensional image detector. Above all, it is extremely effective when the use of copper (Cu) is required for the purpose of lowering the resistance of wiring such as in the display field where a large area is required, or when wiring formation by wet film formation is required instead of dry film formation. Is.

Further, the present invention is not limited to the method for manufacturing metal wiring for flat panel displays and two-dimensional image detectors, but can be widely applied as a method for manufacturing metal wiring in other fields.

As described above, the active matrix substrate of this embodiment is manufactured by using the above-described method for manufacturing metal wiring. Therefore, the same effect as the effect described in the method for manufacturing the metal wiring can be obtained.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from peeling off from the substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. In addition to the above, it is possible to provide an active matrix substrate that can prevent the disconnection of other wirings and can avoid the complexity of the process and the increase of the manufacturing cost.

[0141]

EXAMPLES [Example 1] In Example 1, a method for forming the metal wiring described in the first embodiment will be described with reference to a specific example.

(First Step) First, as shown in FIG. 1A, a non-conductive oxide film 12 made of SiO ₂ is formed on the surface of an insulating substrate 10 made of glass by the sol-gel method.

Product name "# 1737 (made by Corning)"
The non-conductive oxide film 12 made of SiO _{2 is} formed on the insulating substrate 10 made of the glass substrate by the sol-gel method.
At this time, the sol-gel solution is diluted with alcohol to an appropriate viscosity, and applied by spin coating to a thickness of about 0.2 μm. Then, after drying at 150 ° C., firing is performed at 500 ° C. As a result, porous S with a thickness of about 0.1 μm
nonconductive oxide film 12 made of iO ₂ is completed.

(Second Step) As shown in FIG. 1 (b),
The plating catalyst 14 is applied on the non-conductive oxide film 12 obtained in the first step.

A palladium chloride-containing liquid, for example, a trade name "ENPLATE ACTIVATOR 440 (manufactured by Meltex)" was diluted to 30 mL / L, and the pH was adjusted to 5 with an aqueous 1 mol / L (1N) potassium hydroxide (KOH) solution. Non-conductive oxide film 1 by immersing it in the one adjusted to 0.5
Plating catalyst 1 consisting of palladium (Pd) ions on 2
4 is attached.

(Third Step) As shown in FIG. 1C,
A metal film 16 is formed by plating on the plating catalyst 14 obtained in the second step.

This time, first, a metal film 16 made of a nickel (Ni) film is formed to a thickness of about 0.3 μm by using an electroless nickel (Ni) plating solution using sodium hypophosphite as a reducing agent. . In the electroless plating, the metal film 16 can be selectively formed only on the base having a catalytic property, so that nickel (Ni) can be selectively formed on the catalyst application surface.
The metal film 16 made of a film can be formed.

(Fourth Step) As shown in FIG. 1D,
The metal film 16 formed in the third step is patterned.

As a patterning method, the metal film 16 is used.
After applying a positive type resist by spin coating to a thickness of about 2 μm, prebaking is performed at 80 ° C., and then ultraviolet irradiation is performed via a photomask. After that, by performing development processing and post-baking at 120 ° C., a resist pattern having a wiring shape is formed on the metal film 16. By immersing the metal film substrate on which the resist pattern is formed in an etching solution, the metal film 16 in a portion not covered with the resist is etched.

Finally, the resist is removed with a resist stripper to form a metal wiring pattern.

Example 2 In Example 2, the second embodiment is described.
The method for forming the metal wiring described in 1 will be specifically described.

(First Step) First, as shown in FIG. 2A, a non-conductive oxide film 12 made of SiO ₂ is formed on the surface of an insulating substrate 10 made of glass by a sol-gel method.

Product name "# 1737 (made by Corning)"
The non-conductive oxide film 12 made of SiO _{2 is} formed on the insulating substrate 10 made of the glass substrate by the sol-gel method.
This sol-gel solution is diluted to a suitable viscosity with alcohol and applied by spin coating to a thickness of about 0.2 μm. Then, after drying at 150 ° C., firing is performed at 500 ° C. As a result, porous Si having a thickness of about 0.1 μm is obtained.
The non-conductive oxide film 12 made of O ₂ is completed.

(Second Step) In the second step, as shown in FIG.
As shown in (b), the photosensitive plating catalyst 18 is applied.

As the photosensitive plating catalyst 18, palladium acetylacetonate dissolved in chloroform is used, and a film is formed by a spin method. When the film is formed by the spin method, the film thickness is about 100Å or less. After that, baking before exposure is performed.

(Third Step) In the third step, as shown in FIG.
As shown in (c), the photosensitive plating catalyst 18 made of a photosensitive palladium (Pd) plating catalyst is patterned.

Because of its photosensitivity, as a patterning method, a mask having a desired pattern is used to perform exposure using an exposure device such as a stepper, and then development and baking are performed to form a pattern.

As a specific method for patterning the plating catalyst, a photosensitive catalyst is applied by a spin method and then prebaked. Then, exposure is performed with a pattern corresponding to the wiring shape. By performing the exposure, metallic palladium (Pd) is deposited on the base film only in the exposed region.

After that, the photosensitive plating catalyst 18 in the unexposed region is washed away with an organic solvent such as chloroform and post-baked to form a palladium (Pd) pattern. Since chloroform is used as the solvent in this embodiment, chloroform is used as the organic solvent.

(Fourth Step) As shown in FIG.
Example 1 was formed on the pattern of the photosensitive plating catalyst 18 composed of the photosensitive palladium (Pd) catalyst obtained in the third step.
The metal film 16 is formed by plating by the same method as the third step.

[Third Embodiment] In the third embodiment, the first embodiment will be described.
The method for forming the non-conductive oxide film 12 described in 1 above by the liquid phase deposition method will be specifically described.

(First Step) First, as shown in FIG. 2A, as a first step, an insulating substrate 10 made of a glass substrate having a trade name “# 1737 (manufactured by Corning Incorporated)”
Non-conductive oxide film 12 made of SiO ₂ by liquid phase deposition method
To form a film.

(Second Step) Next, as shown in FIG. 2B, as a second step, a photosensitive palladium (Pd) catalyst film formed of a photosensitive palladium (Pd) catalyst film was formed by the same method as in Example 2. The plating catalyst 18 is formed.

(Third Step) Next, as shown in FIG. 2C, as a third step, the photosensitive palladium (manufactured in the second step was prepared by the same method as in Example 2). P
d) The photosensitive plating catalyst 18 made of a catalyst is patterned.

(Fourth Step) Next, as shown in FIG. 2D, as a fourth step, a metal film 16 is formed on the non-conductive oxide film 12 made of SiO ₂ by plating. The method for forming the plating film is the same as in the first embodiment.

Example 4 In Example 4, the first embodiment will be described.
The method of forming the non-conductive oxide film 12 described in 1 above by a chemical deposition method in an aqueous solution will be specifically described.

(First Step) First, as shown in FIG. 2A, as a first step, chemical deposition is performed on an insulating substrate 10 made of a glass substrate having a trade name “# 1737 (made by Corning Incorporated)”. The non-conductive oxide film 12 made of zinc oxide (ZnO) is formed by the method.

Specifically, tin dihydrate (SnCl ₂
・ 2H ₂ O) is dissolved in a sensitizer solution in which 1 g / dm ³ and 37% hydrochloric acid (HCl) are dissolved at a ratio of 1.0 mL / dm ³ to immerse the above-mentioned substrate to first adsorb tin (Sn) ions. .

Next, the substrate was changed to palladium chloride (Pd
Cl ₂ ) is immersed in an activator solution in which 0.1 g / dm ³ and 37% hydrochloric acid (HCl) are dissolved in a ratio of 1.0 mL / dm ³ to replace tin (Sn) ions with palladium (Pd) ions. As a result, a palladium (Pd) catalyst can be added.

The conditions of the step of applying palladium (Pd) are not limited to those described above, and the sensitizer-
In addition to the activator method, the catalyst-accelerator method may be used.

Further, as disclosed in Japanese Patent Laid-Open No. 2000-336486, tin (Sn) ions are replaced by silver (A).
The sensitizer-activator method of substituting g) ions with palladium (Pd) ions to impart a high density of catalyst nuclei can also be suitably used.

Next, zinc oxide (Zn oxide) as an oxide semiconductor was added to the above-mentioned substrate to which the palladium (Pd) catalyst was applied.
A film consisting of O) is formed in an aqueous solution.

Specifically, zinc nitrate (Zn (N
O ₃ ) ₂ ) in 0.05 mol / L dissolved in an aqueous solution,
Dimethylamine borane (DAMB) was added as a reducing agent in an amount of 0.
A 1 mol / L concentration is added to prepare an aqueous solution whose pH is adjusted to about 6.5. Then, the aqueous solution is heated to 70 to 80 ° C.
The above-mentioned substrate with a catalyst is immersed in the state of being stirred while keeping the temperature.

As a result, the catalyst is applied and the zinc oxide (ZnO) film is deposited only on the surface of the substrate. This is, for example, J. Electrochem. Soc., Vol. 144, No.1, p. L3, 1
The well-known method described in 997 is used, and the detailed explanation of the chemical reaction is omitted.

By the way, in the zinc oxide film deposited by this method, the crystal growth of zinc oxide (ZnO) starts with the catalyst as the nucleus, and therefore the crystal growth direction is random at the initial stage of deposition, and many fine irregularities are formed. It becomes a film of the existing surface state.

(Second Step) Next, as shown in FIG. 2B, as a second step, a photosensitive film made of a photosensitive palladium (Pd) catalyst film was formed by the same method as in Example 2. The plating catalyst 18 is formed.

(Third Step) Next, as shown in FIG. 2C, as a third step, the photosensitive palladium (manufactured in the second step was prepared by the same method as in Example 2). P
d) The photosensitive plating catalyst 18 made of a catalyst is patterned.

(Fourth Step) Next, as shown in FIG. 2D, as a fourth step, a metal film 16 is formed by plating on the non-conductive oxide film 12 made of zinc oxide (ZnO). Form. The method for forming the plating film is the same as in the first embodiment.

The ZnO film thus obtained has a large number of irregularities most suitable for obtaining the anchor effect, as compared with the SiO ₂ film obtained by the sol-gel method. It is possible to obtain the effect of further improving the adhesiveness of the film.

According to the metal wiring manufacturing methods of Examples 1 to 4, the base film is prevented from peeling off from the substrate when the metal wiring is formed by the plating method, and the thickness of the entire metal wiring is increased. It has been confirmed that this can be avoided to prevent disconnection of other wirings arranged on the upper side of the metal wiring, or in addition to the above, the complexity of the process and the increase of manufacturing cost can be avoided.

[0181]

As described above, the method of manufacturing a metal wiring according to the present invention includes the first step of forming a non-conductive oxide film on an insulating substrate by a wet film forming technique, and the above-mentioned non-conductive oxide film. A second step of applying a plating catalyst to the second step, and a third step of forming a metal film on the plating catalyst by a plating method,
And a fourth step of patterning the metal film into a wiring shape.

Therefore, since the non-conductive oxide film serving as the underlying film of the metal film is formed on the entire insulating substrate by the wet film forming technique, the non-conductive oxide film has no singular point called a pattern edge, and the pattern is eliminated. It is possible to prevent the occurrence of peeling due to the presence of edges.

Further, since the patterning process of the base of the metal film can be omitted, the process can be simplified.

Further, since the layer to which the plating catalyst is applied is thin, the disconnection of the other wiring due to getting over the other wiring formed on the upper side of the metal wiring is eliminated.

Further, since the non-conductive oxide film is used as the base film of the metal film, there is no adverse effect such as current leakage and formation of capacitance between other upper metal wiring and the base film. Does not reach.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from peeling off from the insulating substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring capable of preventing disconnection of another wiring to be produced.

As described above, the method of manufacturing a metal wiring according to the present invention includes the first step of forming a non-conductive oxide film on the insulating substrate by the wet film forming technique and the photosensitivity on the oxide film. A second step of applying a plating catalyst, a third step of patterning the photosensitive plating catalyst into a wiring shape, and a metal film selectively on the photosensitive plating catalyst patterned into the wiring shape by a plating method. And a fourth step of forming.

Therefore, since the photosensitive plating catalyst is used in the step of applying the plating catalyst, the etching step is not necessary and the process is simplified. Further, it is possible to selectively form a metal film on the catalyst-applied surface, and it is possible to reduce the cost by reducing the metal material and eliminating the need for an etching device.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from peeling off from the substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the thickness of the entire metal wiring. It is possible to provide a method for manufacturing a metal wiring, which can prevent the disconnection of other wirings, and can avoid the complexity of the process and the increase of the manufacturing cost.

The method of manufacturing a metal wiring according to the present invention is characterized in that, in the method of manufacturing a metal wiring, the wet film forming technique used in the step of forming the non-conductive oxide film is a sol-gel method. Is the way.

Therefore, in the sol-gel method, it is possible to form a porous oxide film having fine holes in a mesh shape, as compared with an oxide film formed by a vacuum device.

Therefore, it is possible to obtain a plating film having very good adhesion on the oxide film obtained by the sol-gel method. As a result, it is possible to perform electroless copper (Cu) plating on the inorganic insulating film, which has been difficult in the past.

Further, in the method for manufacturing a metal wiring of the present invention, in the method for manufacturing a metal wiring, the wet film forming technique used in the step of forming the non-conductive oxide film is a chemical deposition method or a liquid phase deposition method. Either way.

Therefore, since the oxide film can be formed only by immersing the glass substrate in the aqueous solution, the film can be formed without using a vacuum device, and the film can be easily formed at a low cost and in a large area. it can. In addition, the oxide film obtained by the chemical deposition method has more rough surface than the oxide film formed by the vacuum apparatus because the crystal grains grow with the metal catalyst attached on the substrate as the nucleus. Therefore, there is an effect that a plating film having very good adhesion can be obtained on the oxide film obtained by the chemical deposition method.

The method of manufacturing a metal wiring according to the present invention is the method of manufacturing a metal wiring described above, wherein the non-conductive oxide film is transparent.

Therefore, there is an effect that it can be applied to all transmissive display elements using glass as a substrate.

The method for producing metal wiring of the present invention is the method for producing metal wiring as described above, wherein the photosensitive plating catalyst contains palladium (Pd).

Therefore, copper (Cu), nickel (N
There is an effect that plating with various metals such as i), gold (Au), silver (Ag), and palladium (Pd) becomes possible.

The method of manufacturing a metal wiring according to the present invention is the same as the method of manufacturing a metal wiring, wherein the metal film is mainly made of nickel (Ni), copper (Cu), gold (Au) or silver (Ag). The method is a single-layer film of any one of them or a multi-layer film containing at least one layer of these single-layer films.

Therefore, nickel (Ni), copper (Cu)
Both can form a film on the photosensitive plating catalyst with good adhesion, and can also selectively perform electroless plating. Further, copper (Cu) or gold (Au) can realize a low resistance metal wiring. In particular, a film of nickel (Ni) is formed on the photosensitive plating catalyst, and copper (C) is further formed on the film.
By forming a film of u), gold (Au), copper (Cu) / gold (Au), or the like, it is possible to realize a metal wiring with good adhesion and low resistance. In addition, copper (C
u) There is an effect that the wiring can be formed.

Further, the metal wiring board of the present invention is manufactured by the method for manufacturing a metal wiring as described in any one of the above inventions, as described above.

Therefore, the metal wiring board of the above invention is
The same effects as the effects described in any one of the above-described metal wiring manufacturing methods can be obtained.

Therefore, when the metal wiring is formed by the plating method, the base film is prevented from peeling off from the substrate, and the metal wiring is disposed above the metal wiring while avoiding an increase in the film thickness of the entire metal wiring. In addition to the above, it is possible to provide a metal wiring board capable of preventing disconnection of other wirings and avoiding increase in process complexity and manufacturing cost.

[Brief description of drawings]

1A to 1D are sectional views showing respective steps, showing an embodiment of a method for manufacturing a metal wiring according to the present invention.

2A to 2D show another embodiment of the method for manufacturing a metal wiring according to the present invention, and are cross-sectional views showing respective steps.

FIG. 3 is a cross-sectional view of an active matrix substrate when the metal wiring is used as a gate wiring of an active matrix substrate for LCD.

[Explanation of symbols]

10 Insulating substrate 12 Non-conductive oxide film 14 Plating catalyst 16 Metal film 18 Photosensitive plating catalyst 20 gate wiring 21 Gate electrode 22 Gate insulating film 24 TFT element 26 Source electrode 28 Drain electrode 30 Insulation protection film 32a-Si: H 34 n + type a-Si: H

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C23C 18/44 C23C 18/44 H01L 21/3205 G02F 1/1343 29/786 H01L 21/88 B // G02F 1/1343 29/78 617J 617MF Term (Reference) 2H092 GA24 GA25 HA06 HA28 MA11 4K022 AA04 BA01 BA03 BA08 BA14 BA31 BA36 CA07 DA03 DB06 4M104 AA01 AA08 AA09 AA10 BB05 BB07 DD06 DD22 DD53 CC52 DD16 DD22 CC52 DD01 EE17 FF13 FF16 FF17 GG09 HH09 HH16 5F033 GG03 GG04 HH07 HH08 HH11 HH13 HH14 HH15 HH20 HH21 HH38 LL04 MM05 MM08 MM13 PP27 PP28 Q13 XXV15V16V22V23R15SS25V10V22SS23V23SS23 EE07 EE14 EE41 FF03 GG02 GG04 GG15 GG41 HK04 HK09 HK16 HK21 NN01 NN24 NN27 NN72

Claims (8)

[Claims] 1. A first step of forming a non-conductive oxide film on an insulating substrate by a wet film formation technique, a second step of applying a plating catalyst on the non-conductive oxide film, and the plating catalyst. A method of manufacturing a metal wiring, comprising: a third step of forming a metal film on the above by a plating method; and a fourth step of patterning the metal film into a wiring shape. 2. A first step of forming a non-conductive oxide film on an insulating substrate by a wet film forming technique; a second step of applying a photosensitive plating catalyst on the non-conductive oxide film; It is formed by a third step of patterning the photosensitive plating catalyst into a wiring shape and a fourth step of selectively forming a metal film on the photosensitive plating catalyst patterned into the wiring shape by a plating method. A method of manufacturing a metal wiring, comprising: 3. The method for producing metal wiring according to claim 1, wherein the wet film forming technique in the first step is a sol-gel method. 4. The method of manufacturing a metal wiring according to claim 1, wherein the wet film forming technique in the first step is a chemical deposition method or a liquid phase deposition method. 5. The method of manufacturing a metal wiring according to claim 1, wherein the non-conductive oxide film is transparent. 6. A photosensitive plating catalyst is palladium (Pd).
The method for producing a metal wiring according to claim 2, further comprising: 7. The metal film is formed of nickel (Ni), copper (C).
2. A monolayer film containing u), gold (Au) or silver (Ag) as a main component, or a multilayer film including at least one layer of these single layer films. Two
A method for manufacturing a metal wiring according to. 8. A metal wiring board manufactured by using the method for manufacturing a metal wiring according to claim 1. Description: