JP2003048787A - COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME - Google Patents

COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
JP2003048787A
JP2003048787A JP2001237772A JP2001237772A JP2003048787A JP 2003048787 A JP2003048787 A JP 2003048787A JP 2001237772 A JP2001237772 A JP 2001237772A JP 2001237772 A JP2001237772 A JP 2001237772A JP 2003048787 A JP2003048787 A JP 2003048787A
Authority
JP
Japan
Prior art keywords
base material
composite material
joining
joining partner
partner member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001237772A
Other languages
Japanese (ja)
Inventor
Shinko Ogusu
真弘 小楠
Kohei Taguchi
功平 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NHK Spring Co Ltd
Original Assignee
NHK Spring Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NHK Spring Co Ltd filed Critical NHK Spring Co Ltd
Priority to JP2001237772A priority Critical patent/JP2003048787A/en
Publication of JP2003048787A publication Critical patent/JP2003048787A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a composite material with Al-base ceramics having a good joint whose void volume is small. SOLUTION: In a joint formed by joining a base material comprising aluminum nitride and a member comprising an Al-base metal to be joined to the base material, a Ge thickened phase and an Mg thickened phase having <=100 μm thickness are present along the joining interface.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えばヒータや電
気絶縁部材あるいは放熱用部材などに利用されるAl系
セラミックスを備えた複合材と、その製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite material provided with Al-based ceramics, which is used, for example, in a heater, an electrically insulating member or a heat radiation member, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】例えば窒化アルミニウム(AlN)等の
Al系セラミックスは、高温強度と電気絶縁性に優れ、
かつ、セラミックスの中では熱伝導率が比較的高いこと
から、ヒータや電気絶縁部材あるいは放熱用部材などの
材料として有望視されている。しかしAl系セラミック
スは、セラミックスゆえに成形後の機械加工が困難であ
る。このため所望形状のAl系セラミックス製品を製造
するには、Al系セラミックスからなる複数の部品を接
合することが行われる。
2. Description of the Prior Art Al-based ceramics such as aluminum nitride (AlN) are excellent in high temperature strength and electrical insulation.
In addition, because of its relatively high thermal conductivity among ceramics, it is regarded as a promising material for heaters, electrical insulating members, heat dissipation members, and the like. However, Al-based ceramics are difficult to machine after molding because they are ceramics. Therefore, in order to manufacture an Al-based ceramic product having a desired shape, a plurality of parts made of Al-based ceramics are joined together.

【0003】また、熱伝導性の高いアルミニウム合金か
らなる放熱部材をAl系セラミックスに接合することに
より、アルミニウム合金とAl系セラミックスのそれぞ
れの長所を生かすことができるような複合材も望まれて
いる。
There is also a demand for a composite material in which a heat-dissipating member made of an aluminum alloy having a high thermal conductivity is bonded to an Al-based ceramic so that the respective advantages of the aluminum alloy and the Al-based ceramic can be utilized. .

【0004】従来、Al系セラミックスからなる母材を
アルミニウム合金等の金属部材からなる接合相手部材に
接合する方法として、Al−Si系のろう材を用いてろ
う付けを行うことが試みられている。このろう材の成分
は、例えばSiが重量比で12%、残部が主としてAl
であり、接合温度は例えば600℃前後であった。
Conventionally, as a method of joining a base material made of Al-based ceramics to a joining partner member made of a metal member such as an aluminum alloy, brazing using an Al-Si type brazing material has been attempted. . The component of this brazing material is, for example, 12% by weight of Si and the balance mainly Al.
And the bonding temperature was around 600 ° C., for example.

【0005】[0005]

【発明が解決しようとする課題】しかし前記従来のろう
材による接合方法の場合、母材(Al系セラミックス)
に対する濡れ性が悪いことから、接合界面に多くの空隙
が残り、接合部の品質が安定しないという問題があっ
た。
However, in the case of the conventional joining method using the brazing material, the base material (Al-based ceramics) is used.
Due to its poor wettability with respect to, there was a problem that many voids remained at the joint interface and the quality of the joint was not stable.

【0006】従って本発明の目的は、母材と接合相手部
材との間に、空隙が少なく良好な接合部を有するAl系
セラミックスを備えた複合材と、その製造方法を提供す
ることにある。
[0006] Therefore, an object of the present invention is to provide a composite material including an Al-based ceramic having a good joint with few voids between the base material and the mating member, and a method for producing the same.

【0007】[0007]

【課題を解決するための手段】本発明者らは、Al系セ
ラミックスの接合を行う場合に、接合界面にGeの濃化
相を形成させることにより、空隙が少なく良好な接合部
が得られることを見出した。本発明の複合材は、Al系
セラミックスからなる母材と、該母材に接合される接合
相手部材とを有し、前記母材と接合相手部材との接合部
にGeの濃化相が存在している。
Means for Solving the Problems The inventors of the present invention can obtain a good joint with few voids by forming a Ge enriched phase at the joint interface when joining Al-based ceramics. Found. The composite material of the present invention has a base material made of Al-based ceramics and a joining partner member to be joined to the parent material, and a Ge enriched phase is present in the joining portion between the base material and the joining partner member. is doing.

【0008】この明細書で言うAl系金属とは、純粋な
アルミニウムと、アルミニウム合金とを含む概念であ
る。また、「主たる成分がAl」とは、材料中に含まれ
る金属成分のうち、重量比率で最も多い成分がAlであ
ることを意味する。「濃化相」とは、被検出部を一定の
方向に走査して材料中の成分元素を検出したときに、特
定の部位において特定の元素が他の部位よりも多量に存
在することが検出された組織を言う。
The Al-based metal referred to in this specification is a concept including pure aluminum and an aluminum alloy. Further, "the main component is Al" means that among the metal components contained in the material, the component having the largest weight ratio is Al. “Thickened phase” means that when a detected element is scanned in a certain direction to detect the constituent elements in the material, it is detected that the specific element is present in a larger amount at a specific site than at other sites. The organization that was created.

【0009】本発明では、接合界面に沿ってGeの濃化
相が形成される。Geの濃化相に加えて、Mgの濃化相
が形成されていると、さらに良い場合がある。本発明に
おいては、母材にAl系セラミックスが使用される。A
l系セラミックスとして、窒化アルミニウム[AlN]
をはじめとして、酸化アルミニウム[Al]、ム
ライト[Al・SiO],コーディエライト
[(Mg,Fe)Al (SiAl)O18],ヤ
グ[YAl)],サイアロン[Si ・A
lN・SiO・Al]を挙げることもできる。
In the present invention, Ge is concentrated along the bonding interface.
A phase is formed. In addition to the Ge enriched phase, the Mg enriched phase
May be even better if formed. In the present invention
In this case, Al-based ceramic is used as the base material. A
Aluminum nitride [AlN] as l-based ceramics
, Aluminum oxide [AlTwoOThree], Mu
Light [AlTwoOThree・ SiOTwo], Cordierite
[(Mg, Fe)TwoAl Three(Si5Al) O18], Ya
Gu [YThreeAl5OTwo)], Sialon [SiThreeN Four・ A
1N ・ SiOTwo・ AlTwoOThree] Can also be mentioned.

【0010】例えばAl−Si−Ge−Mg合金ろうを
使用し、AlNの接合界面に沿ってAl−Ge−Mgか
らなる反応層を形成させることで、空隙率が少なく、接
合強度の高い複合材を得ることが可能である。接合相手
部材は金属が望ましく、特にAl系金属は、前記ろう材
との接合性が高いため望ましい。
For example, by using an Al-Si-Ge-Mg alloy brazing material and forming a reaction layer of Al-Ge-Mg along the bonding interface of AlN, a composite material having a low porosity and a high bonding strength. It is possible to obtain A metal is desirable for the joining partner member, and an Al-based metal is particularly desirable because it has a high joining property with the brazing material.

【0011】Al−Ge−Mgからなる反応層は、濃化
相の最大厚さが100μm以下、さらには20μm以下
とすることが望ましい。反応層の最大厚さが100μm
を越えると、反応層が破壊しやすくなり、強度が低下す
ることがある。ここで最大厚さが100μm以下とは、
接合界面近傍(接合界面より500μmの範囲)に存在
するGe濃化相の、接合界面に垂直な方向の長さの最大
値である。
In the reaction layer made of Al-Ge-Mg, the maximum thickness of the concentrated phase is preferably 100 μm or less, and more preferably 20 μm or less. Maximum thickness of reaction layer is 100μm
If it exceeds, the reaction layer is likely to be broken and the strength may be lowered. Here, the maximum thickness of 100 μm or less means
It is the maximum value of the length of the Ge-enriched phase existing in the vicinity of the bonding interface (in the range of 500 μm from the bonding interface) in the direction perpendicular to the bonding interface.

【0012】この発明で用いるろう材は、Geを含んで
いることが望ましいが、拡散によって、母材あるいは接
合相手部材から、接合部にGeが供給されるようにして
もよい。ろう材にMgが含まれていればさらに望まし
い。例えば、重量比で5〜50%のGeと、0.5〜5
%のMgが含有され、残部の主たる成分がAlであるろ
う材が望ましい。また、重量比で4〜10%のSiと、
5〜50%のGeと、5〜5%のMgが含有され、残部
の主たる成分がAlであるろう材も望ましい。
The brazing material used in the present invention preferably contains Ge, but Ge may be supplied to the joint from the base material or the mating member by diffusion. It is more desirable that the brazing material contains Mg. For example, 5 to 50% by weight Ge and 0.5 to 5
%, And a brazing material containing Al as the main component of the balance is preferable. Further, 4 to 10% by weight of Si,
A brazing filler metal containing 5 to 50% of Ge and 5 to 5% of Mg and the remaining main component being Al is also desirable.

【0013】[0013]

【発明の実施の形態】(実施例1)窒化アルミニウムか
らなる母材と、Al系金属からなる接合相手部材を、A
l−Ge−Si−Mg合金のろう材を用いて接合するこ
とにより、図1に示す剪断試験用の試料Aと、図3に示
すピーリング試験(引き剥がし試験)用の試料Bを作製
した。試料A,Bとも母材10は窒化アルミニウムから
なり、焼結助剤として、Yを2重量%ほど含んで
いる。
BEST MODE FOR CARRYING OUT THE INVENTION (Example 1) A base material made of aluminum nitride and a mating member made of Al-based metal were
By joining using a brazing material of 1-Ge-Si-Mg alloy, a sample A for a shear test shown in FIG. 1 and a sample B for a peeling test (peeling test) shown in FIG. 3 were produced. In both samples A and B, the base material 10 is made of aluminum nitride and contains 2% by weight of Y 2 O 3 as a sintering aid.

【0014】試料A,Bとも接合相手部材11は、JI
S4000で規定されるNo.A1050Pである。た
だし、JIS4040で規定されるNo.1050を用
いてもよい。ろう材12の組成(重量%)は、試料A,
Bとも、Geが25%、Siが8%、Mgが1%、残部
がAlである。接合相手部材11は、接合部12aにお
いて、母材10と接合されている。
In both the samples A and B, the joining partner member 11 is JI
No. specified in S4000. It is A1050P. However, the No. specified in JIS4040. 1050 may be used. The composition (% by weight) of the brazing filler metal 12 is
In both B, Ge is 25%, Si is 8%, Mg is 1%, and the balance is Al. The joining partner member 11 is joined to the base material 10 at the joining portion 12a.

【0015】試料Aの母材10は、直径φ20mm、長
さ20mmの円柱である。接合相手部材11は、直径φ
14mm、長さ5mmの円柱である。図2に示すように
母材10と接合相手部材11との間に箔状のろう材12
を設ける。ろう材12の厚さは、例えば30μmであ
る。そして矢印F1で示す方向から1MPaの荷重を負
荷し、真空炉にて接合温度(585℃)まで加熱するホ
ットプレス法により接合した。そののち冷却した。
The base material 10 of the sample A is a cylinder having a diameter of 20 mm and a length of 20 mm. The joining partner member 11 has a diameter φ.
It is a cylinder with a length of 14 mm and a length of 5 mm. As shown in FIG. 2, a foil-shaped brazing material 12 is provided between the base material 10 and the joining partner member 11.
To provide. The thickness of the brazing material 12 is, for example, 30 μm. Then, a load of 1 MPa was applied from the direction indicated by the arrow F1 and the joining was performed by a hot press method of heating to a joining temperature (585 ° C.) in a vacuum furnace. Then cooled down.

【0016】図7は、実施例1の接合部を撮影した顕微
鏡写真である。写真中の接合界面に沿って白く見えるの
が、Al−Ge−Mgを含む反応層である。この接合部
について、EPMA(エレクトロンプローブマイクロア
ナライザ)を用いて濃化相の有無を調べた。ここでは、
接合界面に垂直な方向にプローブを走査させながら照射
し、照射によって励起された特性X線の強度の変化を測
定したところ、接合界面に沿った箇所にGeとMgの濃
化相が存在していることが確認された。GeとMgの濃
化相の厚さはいずれも5μm〜10μm前後であった。
FIG. 7 is a photomicrograph of the joint portion of Example 1. What appears white along the bonding interface in the photograph is the reaction layer containing Al—Ge—Mg. The presence or absence of a concentrated phase was examined for this junction using an EPMA (electron probe microanalyzer). here,
Irradiation was performed while scanning the probe in a direction perpendicular to the bonding interface, and the change in the intensity of the characteristic X-ray excited by the irradiation was measured. As a result, it was found that a concentrated phase of Ge and Mg was present along the bonding interface. Was confirmed. The thickness of the concentrated phase of Ge and Mg was about 5 μm to 10 μm.

【0017】上記接合部の空隙率は3%未満であり、良
好な接合部が得られていた。空隙率の測定は、接合部を
接合界面と垂直な方向に切断し、切断面を研摩したのち
顕微鏡にて接合部を撮影し、この顕微鏡写真に基いて、
接合界面に存在する空隙の面積率を求めた。具体的に
は、観察された接合界面の長さをL1,空隙の生じてい
た箇所の合計長さをL2としたとき、空隙率は、(L2
/L1)×100で表される値(%)である。
The porosity of the above-mentioned joint was less than 3%, and a good joint was obtained. The porosity is measured by cutting the joint in a direction perpendicular to the joint interface, polishing the cut surface, and then photographing the joint with a microscope.
The area ratio of voids existing at the bonding interface was determined. Specifically, when the observed length of the bonding interface is L1 and the total length of the portions where voids are generated is L2, the void ratio is (L2
/ L1) × 100 (%).

【0018】前記試料Aの剪断強度を調べるために、図
5に示すように母材10を治具20で固定し、接合相手
部材11の先端部に荷重F2を負荷することにより、破
断時の荷重を測定した。破断時の荷重を直径φ14mm
の円形の面積で除することにより、接合部の剪断強度を
求めた。実施例1の剪断強度は60MPaであった。
In order to examine the shear strength of the sample A, the base material 10 was fixed by a jig 20 as shown in FIG. 5, and a load F2 was applied to the tip of the joining mating member 11 to break the material. The load was measured. Diameter at break 14 mm
The shear strength of the joint was determined by dividing by the circular area of. The shear strength of Example 1 was 60 MPa.

【0019】図4に示す試料Bは、厚さが3mm,幅2
0mm,長さ100mmの母材10と、厚さが1mm,
幅10mm,長さ100mmの接合相手部材11との間
に、幅10mm,長さ50mmの箔状のろう材12を設
けた。この母材10と接合相手部材11に、矢印F1で
示す方向から、ろう材12を設置した部分に1MPaの
荷重を負荷し、真空炉中で585℃まで加熱するホット
プレス法により接合した。
Sample B shown in FIG. 4 has a thickness of 3 mm and a width of 2 mm.
0 mm, 100 mm long base material 10 and 1 mm thick,
A foil-shaped brazing material 12 having a width of 10 mm and a length of 50 mm was provided between the joining partner member 11 having a width of 10 mm and a length of 100 mm. The base material 10 and the joining partner member 11 were joined by a hot press method in which a load of 1 MPa was applied to the portion where the brazing filler metal 12 was installed from the direction shown by the arrow F1 and heating to 585 ° C. in a vacuum furnace.

【0020】試料Bも試料Aと同様に、接合界面に沿っ
てGeとMgの濃化相が存在し、接合部の空隙率が3%
未満であった。この試料Bについて、JIS6480に
準拠するピーリング試験を行った。
Like sample A, sample B also has a Ge and Mg enriched phase along the joint interface and has a porosity of 3% at the joint.
Was less than. This sample B was subjected to a peeling test according to JIS6480.

【0021】図6に示すように、母材10を、図示しな
い治具でピーリング試験機の下部21に固定し、接合相
手部材11の一端11aを、上下方向に移動可能な治具
22に固定した。そして母材10に対して治具22を垂
直方向に移動させることによって、接合相手部材11の
一端11aを矢印F3で示す方向に引張り、接合部12
aが剥れるときの引張り荷重(単位:kgf)を測定し
た。この引張り荷重を接合相手部材11の幅10mmで
除することにより、引き剥がし強度(kgf/cm)を
求めた。実施例1のピーリング強度は9kgf/cm以
上であった。
As shown in FIG. 6, the base material 10 is fixed to the lower portion 21 of the peeling tester by a jig (not shown), and one end 11a of the joining partner member 11 is fixed to the jig 22 which is movable in the vertical direction. did. Then, by moving the jig 22 in the vertical direction with respect to the base material 10, one end 11a of the joining partner member 11 is pulled in the direction indicated by the arrow F3, and the joining portion 12
The tensile load (unit: kgf) when a peeled off was measured. The peeling strength (kgf / cm) was determined by dividing this tensile load by the width of the joining partner member 11 of 10 mm. The peeling strength of Example 1 was 9 kgf / cm or more.

【0022】(比較例1)母材と接合相手部材は実施例
1と同様であるが、ろう材にAl−Si合金を用いた。
ろう材中のSiの重量比率は12%である。実施例1と
同様に、母材と接合相手部材との間にろう材を挟み、1
MPaの荷重を負荷するとともに、真空炉にて接合温度
(600℃)まで加熱するホットプレス法により接合し
た。そののち冷却した。
(Comparative Example 1) The base material and the mating member were the same as in Example 1, but an Al-Si alloy was used as the brazing material.
The weight ratio of Si in the brazing material is 12%. As in Example 1, a brazing material is sandwiched between the base material and the joining partner member, and 1
Joining was performed by a hot pressing method in which a load of MPa was applied and heating was performed to a joining temperature (600 ° C.) in a vacuum furnace. Then cooled down.

【0023】比較例1の接合部の濃化相の有無を調べた
ところ、接合界面に沿って僅かにMgの濃化相が確認さ
れたが、その濃化相の厚さは2μm未満であった。比較
例1の接合部の空隙率は5%、剪断強度は61MPa、
ピーリング強度は9kgf/cmであった。
When the presence or absence of a concentrated phase in the joint portion of Comparative Example 1 was examined, a slight Mg concentrated phase was confirmed along the joint interface, but the thickness of the concentrated phase was less than 2 μm. It was The porosity of the joint portion of Comparative Example 1 was 5%, the shear strength was 61 MPa,
The peeling strength was 9 kgf / cm.

【0024】(実施例2)母材と接合相手部材とろう材
は実施例1と同様であるが、錘りによって接合部に0.
001MPaの荷重を負荷するとともに、真空中で接合
温度(585℃)に加熱した。冷却後の接合部の濃化相
の有無を調べたところ、接合界面に沿ってGeとMgの
濃化相が存在していることが確認された。GeとMgの
濃化相の厚さはいずれも5μm〜10μm前後であっ
た。実施例2の接合部の空隙率は20%、剪断強度は3
5MPa、ピーリング強度は5kgf/cmであった。
(Embodiment 2) The base material, the mating member and the brazing material are the same as in Embodiment 1, except that the weight of the base material, the jointing member and the brazing material is 0.
A load of 001 MPa was applied and heating was performed in vacuum at the bonding temperature (585 ° C.). When the presence or absence of a concentrated phase in the joint after cooling was examined, it was confirmed that a concentrated phase of Ge and Mg was present along the joint interface. The thickness of the concentrated phase of Ge and Mg was about 5 μm to 10 μm. The porosity of the joint portion of Example 2 is 20% and the shear strength is 3
The peeling strength was 5 MPa and the peeling strength was 5 kgf / cm.

【0025】(比較例2)母材と接合相手部材とろう材
は比較例1と同様であるが、錘りによって接合部に0.
001MPaの荷重を負荷するとともに、真空中で接合
温度(600℃)に加熱し、そののち冷却した。
(Comparative Example 2) The base material, the mating member and the brazing material are the same as those in Comparative Example 1, but the weight of the base material is 0.
A load of 001 MPa was applied, heating was performed to a bonding temperature (600 ° C.) in vacuum, and then cooling was performed.

【0026】図8は、比較例2の接合部を撮影した顕微
鏡写真である。この接合部の濃化相の有無を調べたとこ
ろ、接合界面に沿って僅かにMgの濃化相が確認された
が、その濃化相の厚さは2μm未満であった。比較例2
の接合部の空隙率は75%、剪断強度は20MPa、ピ
ーリング強度は0.5kgf/cmであった。
FIG. 8 is a photomicrograph of the joint of Comparative Example 2. When the presence or absence of a concentrated phase in this joint was examined, a slight Mg concentrated phase was confirmed along the joint interface, but the thickness of the concentrated phase was less than 2 μm. Comparative example 2
The joint had a porosity of 75%, a shear strength of 20 MPa, and a peeling strength of 0.5 kgf / cm.

【0027】前記実施例1と比較例1は、いずれも接合
時にホットプレス(1MPa)を適用した。強度に関し
て実施例1と比較例1は同等であったが、空隙率に関
し、実施例1は比較例1と比べて空隙率が減少し、接合
部の信頼性が高くなっている。
In both Example 1 and Comparative Example 1, hot pressing (1 MPa) was applied during joining. Although the strength of Example 1 was the same as that of Comparative Example 1, the porosity of Example 1 was smaller than that of Comparative Example 1, and the reliability of the joint was high.

【0028】実施例2と比較例2は、いずれも接合時に
錘りによって母材と接合相手部材とを加圧している。こ
の場合、実施例2は比較例2よりも強度が大幅に向上
し、空隙率も大幅に低減している。ホットプレスに比べ
て錘りを用いる方が加圧に要する設備が簡単であり、低
コストで実施できるという利点がある。
In both Example 2 and Comparative Example 2, the base material and the joining partner member are pressed by the weight during joining. In this case, the strength of Example 2 is significantly improved and the porosity is significantly reduced as compared with Comparative Example 2. Compared to hot pressing, using a weight has the advantage that the equipment required for pressurization is simple and can be implemented at low cost.

【0029】以上述べたように、空隙率と強度に関し、
実施例1,2は、比較例1,2よりも優れた結果が得ら
れた。実施例1,2の空隙率が比較例1,2よりも低い
理由は、接合部にAl−Ge−Mgの反応層が形成され
る過程で、母材の窒化アルミニウムに対するろう材の濡
れ性が高まり、ろう付け不良部(多くは未接合の空隙と
して残る)が減少したためと考えられる。実施例2は比
較例2よりも接合部の空隙率が低く、しかもAl−Ge
−Mgの反応層が形成された接合部が強固である。この
ため、実施例2の接合部の強度が比較例2よりも大幅に
向上した。
As described above, regarding the porosity and the strength,
The results of Examples 1 and 2 were superior to those of Comparative Examples 1 and 2. The reason why the porosity of Examples 1 and 2 is lower than that of Comparative Examples 1 and 2 is that the wettability of the brazing material to the aluminum nitride of the base material is in the process of forming a reaction layer of Al-Ge-Mg in the joint part. It is considered that this is due to a decrease in the number of defective brazing parts (most of which remain as unbonded voids). Example 2 has a lower porosity at the joint than Comparative Example 2, and Al-Ge
The joint where the Mg reaction layer is formed is strong. Therefore, the strength of the joint portion of Example 2 was significantly improved as compared with Comparative Example 2.

【0030】[0030]

【発明の効果】本発明の複合材によれば、例えば窒化ア
ルミニウム等のAl系セラミックスからなる母材と接合
相手部材とを空隙率が低く良好な接合部によって接合す
ることができる。
According to the composite material of the present invention, it is possible to bond a base material made of Al-based ceramics such as aluminum nitride and a mating member with a good joint having a low porosity.

【0031】本発明の複合材の製造方法によれば、Al
系セラミックスからなる母材と接合相手部材とを空隙率
が低く良好な接合部によって接合することができる。本
発明によって製造された複合材は、接合部の空隙率が低
く、接合部の品質が安定しており、高い接合強度を発揮
することができる。
According to the method for producing a composite material of the present invention, Al
It is possible to bond the base material made of the system ceramic and the mating member with a good bonding portion having a low porosity. The composite material manufactured according to the present invention has a low porosity at the joint, has stable quality at the joint, and can exhibit high joint strength.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す複合材の試料Aの斜視
図。
FIG. 1 is a perspective view of a composite material sample A showing an embodiment of the present invention.

【図2】図1に示された試料Aの母材と接合相手部材と
ろう材を示す斜視図。
FIG. 2 is a perspective view showing a base material, a joining partner member, and a brazing material of sample A shown in FIG.

【図3】本発明の一実施例を示す複合材の試料Bの斜視
図。
FIG. 3 is a perspective view of a composite material sample B showing one embodiment of the present invention.

【図4】図3に示された試料Bの母材と接合相手部材と
ろう材を示す斜視図。
4 is a perspective view showing a base material, a joining partner member, and a brazing material of sample B shown in FIG.

【図5】剪断強度を測定する装置の概略を示す側面図。FIG. 5 is a side view showing an outline of an apparatus for measuring shear strength.

【図6】ピーリング試験機の概略を示す側面図。FIG. 6 is a side view showing the outline of a peeling tester.

【図7】本発明の一実施例の接合部の金属組織を500
倍に拡大した顕微鏡写真。
FIG. 7 shows a metallurgical structure of a joint portion according to one embodiment of the present invention, 500
Micrograph magnified twice.

【図8】比較例の接合部の金属組織を500倍に拡大し
た顕微鏡写真。
FIG. 8 is a micrograph of a metal structure of a joint portion of a comparative example magnified 500 times.

【符号の説明】[Explanation of symbols]

10…母材 11…接合相手部材 12…ろう材 10 ... Base material 11 ... Joining member 12 ... Brazing material

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K092 SS18 SS34 VV40 4F100 AA13A AB01B AB09B AB09G AB10B AB10G AB31G AB40 AB40B AB40G AD04A BA02 CB00 EC16 GB48 4G026 BA02 BA03 BA06 BA07 BA16 BA19 BB27 BF11 BF20 BF42 BG02 BG06 BG23 BH06    ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 3K092 SS18 SS34 VV40                 4F100 AA13A AB01B AB09B AB09G                       AB10B AB10G AB31G AB40                       AB40B AB40G AD04A BA02                       CB00 EC16 GB48                 4G026 BA02 BA03 BA06 BA07 BA16                       BA19 BB27 BF11 BF20 BF42                       BG02 BG06 BG23 BH06

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】Al系セラミックスからなる母材と、 該母材に接合される接合相手部材とを有し、 前記母材と接合相手部材との接合部にGeの濃化相が存
在することを特徴とするAl系セラミックスを備えた複
合材。
1. A base material made of Al-based ceramics, and a joining partner member to be joined to the parent material, wherein a Ge enriched phase is present at a joining portion between the base material and the joining partner member. A composite material comprising Al-based ceramics.
【請求項2】前記Geの濃化相が前記母材と接合相手部
材との接合界面に沿って存在し、かつ、この濃化相の厚
さが100μm以下であることを特徴とする請求項1記
載のAl系セラミックスを備えた複合材。
2. The Ge enriched phase is present along a bonding interface between the base material and a mating member, and the thickness of the enriched phase is 100 μm or less. A composite material comprising the Al-based ceramic according to 1.
【請求項3】前記接合部にMgの濃化相が存在すること
を特徴とする請求項1または2記載のAl系セラミック
スを備えた複合材。
3. A composite material comprising Al-based ceramics according to claim 1, wherein a Mg enriched phase is present in the joint portion.
【請求項4】前記Mgの濃化相が前記母材と接合相手部
材との接合界面に沿って存在し、かつ、この濃化相の厚
さが100μm以下であることを特徴とする請求項3記
載のAl系セラミックスを備えた複合材。
4. The Mg enriched phase is present along a bonding interface between the base material and a mating member, and the thickness of the enriched phase is 100 μm or less. A composite material comprising the Al-based ceramic according to 3.
【請求項5】前記母材が窒化アルミニウムからなること
を特徴とする請求項1記載のAl系セラミックスを備え
た複合材。
5. The composite material comprising Al-based ceramics according to claim 1, wherein the base material is made of aluminum nitride.
【請求項6】前記接合相手部材が金属であることを特徴
とする請求項1記載のAl系セラミックスを備えた複合
材。
6. A composite material comprising Al-based ceramics according to claim 1, wherein the joining partner member is a metal.
【請求項7】前記接合相手部材がAl系金属であること
を特徴とする請求項1記載のAl系セラミックスを備え
た複合材。
7. A composite material comprising Al-based ceramics according to claim 1, wherein the joining partner member is an Al-based metal.
【請求項8】前記母材が窒化アルミニウム、接合相手部
材がAl系金属からなり、該母材と接合相手部材との接
合部にAl−Ge−Mgの反応層が形成されていること
を特徴とする請求項1記載のAl系セラミックスを備え
た複合材。
8. The base material is aluminum nitride, the joining partner member is made of an Al-based metal, and an Al—Ge—Mg reaction layer is formed at a joining portion between the parent member and the joining partner member. A composite material comprising the Al-based ceramic according to claim 1.
【請求項9】Al系セラミックスからなる母材と、該母
材が接合される接合相手部材との間に、Geを含有する
Al系ろう材を設け、 前記母材と接合相手部材との接合部を加熱することによ
り、前記母材と接合相手部材との接合部にGeの濃化相
を生じさせた状態で前記母材と接合相手部材を接合する
ことを特徴とするAl系セラミックスを備えた複合材の
製造方法。
9. An Al-based brazing material containing Ge is provided between a base material made of Al-based ceramics and a joining partner member to which the base material is joined, and the joining of the base material and the joining partner member. An Al-based ceramics, characterized in that the base material and the joining partner member are joined in a state where a Ge enriched phase is generated in the joining portion between the base material and the joining partner member by heating the portion. Of manufacturing a composite material.
【請求項10】前記ろう材の成分が、重量比でGeが5
〜50%、Mgが0.5〜5%、残部の主たる成分がA
lであることを特徴とする請求項9記載のAl系セラミ
ックスを備えた複合材の製造方法。
10. A brazing filler metal component having a Ge content of 5 by weight.
~ 50%, Mg 0.5 ~ 5%, the remaining main component is A
The method for producing a composite material comprising an Al-based ceramic according to claim 9, wherein the composite material is 1.
【請求項11】前記母材が窒化アルミニウムからなり、
前記接合相手部材がAl系金属からなることを特徴とす
る請求項10記載のAl系セラミックスを備えた複合材
の製造方法。
11. The base material is made of aluminum nitride,
The method for producing a composite material including Al-based ceramics according to claim 10, wherein the joining partner member is made of Al-based metal.
JP2001237772A 2001-08-06 2001-08-06 COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME Pending JP2003048787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001237772A JP2003048787A (en) 2001-08-06 2001-08-06 COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001237772A JP2003048787A (en) 2001-08-06 2001-08-06 COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME

Publications (1)

Publication Number Publication Date
JP2003048787A true JP2003048787A (en) 2003-02-21

Family

ID=19068796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001237772A Pending JP2003048787A (en) 2001-08-06 2001-08-06 COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME

Country Status (1)

Country Link
JP (1) JP2003048787A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006045040A (en) * 2004-08-09 2006-02-16 Nhk Spring Co Ltd Composite material having silicon-based ceramic and its manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203299A (en) * 2000-01-21 2001-07-27 Denki Kagaku Kogyo Kk Aluminium board and ceramics circuit board using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203299A (en) * 2000-01-21 2001-07-27 Denki Kagaku Kogyo Kk Aluminium board and ceramics circuit board using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006045040A (en) * 2004-08-09 2006-02-16 Nhk Spring Co Ltd Composite material having silicon-based ceramic and its manufacturing method

Similar Documents

Publication Publication Date Title
JP6883596B2 (en) Bonded substrate and manufacturing method of bonded substrate
US6390354B1 (en) Adhesive composition for bonding different kinds of members
JP4936261B2 (en) BORON CARBIDE-CONTAINING CERAMIC BODY AND METHOD FOR PRODUCING THE BODY
JPH08277171A (en) Bonded material, corrosion-resistant bonding material and production of bonded material
JP2001122673A (en) Adhesive composition for joining different members, joining method using the same and combined member joined by joining method
EP1667508A1 (en) Ceramic circuit board, method for making the same, and power module
JPH0936540A (en) Ceramic circuit board
JP2004273736A (en) Joint member and electrostatic chuck
JP2007142126A (en) Composite material, semiconductor-mounted heat dissipating board, and ceramic package using the same
JP2000323618A (en) Copper circuit clad substrate and manufacture thereof
KR20100003707A (en) Bonded structure and method of producing the same
WO2006016479A1 (en) Heat sink member and method for manufacture thereof
JP4104253B2 (en) Board integrated structure
JPH0777989B2 (en) Method for manufacturing ceramic-metal bonded body
JP6558272B2 (en) Manufacturing method of joined body, manufacturing method of power module substrate with heat sink, joined body and power module substrate with heat sink
JP4360847B2 (en) Ceramic circuit board, heat dissipation module, and semiconductor device
JP2021072447A (en) Copper/ceramic assembly, insulated circuit board, method for producing copper/ceramic assembly, and method for producing insulated circuit board
JP2003048787A (en) COMPOSITE MATERIAL WITH Al-BASE CERAMIC AND METHOD FOR MANUFACTURING THE SAME
JP2009094385A (en) Semiconductor device, and manufacturing method thereof
JP6928297B2 (en) Copper / ceramic joints and insulated circuit boards
JPH09172204A (en) Thermoelectric conversion apparatus and thermoelectric its manufacture
JP3302714B2 (en) Ceramic-metal joint
JP6769169B2 (en) Method for manufacturing a bonded body of a ceramic substrate and an aluminum-impregnated silicon carbide porous body
JP2000286466A (en) Si-ge semiconductor device and manufacture of the same, and thermoelectric conversion module
JP3797823B2 (en) Circuit board composite

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080407

A977 Report on retrieval

Effective date: 20101108

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101116

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110412