JP2003046020A - Wiring board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent increase in TCR due to variation in resistance value caused by the diffusion of resistor components, when an insulating substrate consisting of glass ceramics and a resistor are sintered by simultaneous baking. SOLUTION: A wiring board comprises a insulating substrate 3, consisting of sintered glass ceramics, a wiring layer 2 and a resistor 1 formed within the inner part and/or on the surface thereof by simultaneous baking. The resistor consists of 40-70 wt.% tin oxide, 30-60 wt.% platinum, and added 1-4 wt.% manganese dioxide or molybdenum trioxide. Reaction and diffusion phenomena between the resistor constituent material and the glass ceramics can be suppressed, so that the resistance value of the resistor 3 is made stable, and the TCR value becomes smaller.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to glass ceramics.
Same as the inside and / or surface of the insulating base made of sintered body
Includes wiring layer and resistor by firing
For wiring boards with reduced value variation and TCR
It is. [0002] 2. Description of the Related Art In a circuit of a conventional ceramic wiring board, a resistor is provided.
As a method of forming antibodies, mounting on the surface of the wiring board
The way was the main. As a method of this surface mounting,
Soldering of resistor, evaporation of thin film resistor, thick film resistor paste
And baking. Note that thin film and thick film resistors
As for, variation in resistance value can be caused only by forming a resistor.
Fine adjustment of resistance value by trimming
That is common. Also, the resistor mounted in the circuit
Is required to exhibit a stable resistance value at all times.
The stability of the resistance value with respect to the temperature change is TCR (Temperature)
Coefficient of Resistor, temperature coefficient
(Ppm: ° C.). However, in recent years, various electronic parts have been manufactured using ICs or LSs.
Rapid downsizing by using semiconductor integrated circuit devices such as I
・ Higher densities have been added to semiconductor integrated circuit devices.
IC board mounting IC chip and IC package board
Demand for miniaturization and high density of printed circuit boards is increasing
You. One way to meet this demand is to use
One example is to make the mounted resistor into an inner layer.
According to this method, a through conductor such as a via hole has conventionally been used.
To simplify the circuit structure that was pulled out on the board surface
In addition, it is expected that the surface mounting area can be increased. A method for forming such a resistor into an inner layer is as follows.
And paste thick film resistor on ceramic green sheet
And further apply a ceramic green sheet on it
Laminate and fire both ceramic and resistor simultaneously
There is a way. According to this simultaneous firing method, the process is greatly
The resistor can be formed as an inner layer without increasing the resistance. In addition, the resistor
When co-firing, ordinary RuO_TwoAnd SnO_TwoSystem resistor
Since the sintering temperature is about 800-900 ° C,
Uses glass ceramics that can be fired simultaneously at this temperature
You can. [0005] SUMMARY OF THE INVENTION
In the inner layer of such a resistor, a glass ceramic
It is necessary to apply resistor paste during lean sheet processing.
It is important to use a glass ceramic
Since it is a process of sintering at the same time, resistance after firing
The body cannot be trimmed and the variation in resistance cannot be controlled.
There was a problem. [0006] In addition, ordinary resistor paste shows resistance.
Material for sintering, glass material for sintering and its
It is composed of other additives and the like. Therefore, ceramic materials
When the glass is ceramic, the resistor
The glass component in the glass is the glass component in the glass ceramic.
Reacts with each other, causing interdiffusion and greatly increasing the resistance after firing.
Deviation or large variation
There was a problem. Further, low-resistance Cu is used as a wiring layer.
In this case, the firing atmosphere becomes a humidified nitrogen atmosphere,
During sintering of ceramics, the resistance component is
Reacts and ionizes and diffuses into glass ceramics
Phenomenon occurs. Therefore, the resistance value after firing varies.
There was also a problem that sometimes. In order to solve the above problems,
When a resistor material is selected, the TCR value is often
The result can be very large or small.
In that case, make no adjustment to bring the TCR close to zero.
There was also a problem that it had to be done. Generally a circuit board
TCR required for resistor inside is about ± 200ppm / ℃
Degrees, and if the rate of change is higher than
There is a danger that the circuit will malfunction due to the change in resistance. The surface of the baked ceramic substrate is
After baking the resistor and trimming it
There is also a method of bonding a ceramic substrate to
There is a problem that the process becomes longer. The present invention has been made in view of the above-mentioned problems in the prior art.
The purpose of the
Resistance of a resistor co-fired with an insulating substrate made of
Suppress variations and adjust the range by trimming
TCR is within ± 200ppm / ℃ within ± 15% which does not require adjustment
It is to provide a wiring board having the following characteristics. [0011] According to the present invention, there is provided a wiring board comprising:
An insulating substrate made of a ceramic sintered body;
By co-firing with an insulating substrate on the inside and / or surface of the body
Wiring board consisting of a wiring layer and a resistor
Wherein the resistor is 40-70 wt% tin oxide and 30-70 wt%;
60wt% platinum and 1-4wt% manganese dioxide by external addition
Or molybdenum trioxide
Things. According to the wiring substrate of the present invention, the composition of the resistor is
Of stable tin oxide and platinum with low reactivity as compounds
Because of the composition, water during sintering of glass ceramics
And ionization into glass ceramics
It is possible to suppress the diffusion phenomenon of the metal component. Further, tin oxide and platinum in the resistor composition are
Be within the range of 40-70wt% and 30-60wt% respectively
This allows the resistor composition to be sintered uniformly.
It is possible to make the resistance value variation within ± 15%
% Or less. Further, manganese dioxide or
Add 1 to 4 wt% of molybdenum trioxide
Thus, the adjustment for lowering the TCR can be added.
As a result, without being affected by the firing atmosphere,
Resistance variation can be suppressed and stable even from the viewpoint of TCR
It can be a wiring board. [0015] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail. FIG. 1 shows an embodiment of a wiring board according to the present invention.
FIG. 1 is a cross-sectional view showing an example, where 1 is an internal resistor and 2 is
The wire layer 3 is an insulating base made of glass ceramic.
You. The insulating substrate 3 is made of a plurality of glass ceramics.
Layers are laminated, and the inside and / or
Denotes a resistor 1 and a resistor 1,
The wiring layer 2 is formed in the shape of a wiring. The insulating substrate 3 made of glass ceramic
In making, first, glass powder, filler powder
(Ceramic powder), organic binder, plasticizer, and
Solvent, etc. to obtain a slurry, which is then
Gala by the lade method, rolling method, calendar roll method, etc.
Produce a ceramic green sheet. As the glass powder, for example, SiO 2_Two-B_Two
O_ThreeSystem / SiO_Two-B_TwoO_Three-Al_TwoO_ThreeSystem / SiO_Two-B_TwoO
_Three-Al_TwoO_Three-MO system (where M is Ca, Sr, Mg,
Ba or Zn) · SiO_Two-Al_TwoO_Three-M¹O-
M^TwoO type (however, M¹And M ^TwoAre the same or different C
a, Sr, Mg, Ba or Zn) ・ SiO_Two−
B_TwoO_Three-Al_TwoO_Three-M¹OM^TwoO type (however, M¹and
M^TwoIs the same as above.) ・ SiO_Two-B_TwoO_Three-M^Three _TwoO system
(However, M^ThreeRepresents Li, Na or K) .SiO_Two−
B_TwoO_Three-Al_TwoO_Three-M^Three _TwoO type (however, M^ThreeIs the same as above
Use of Pb-based glass, Bi-based glass, etc.
Can be. As the filler powder, for example, Al
_TwoO_Three, SiO_Two, ZrO_TwoWith alkaline earth metal oxides
Composite oxide / TiO_TwoAnd alkaline earth metal oxide
Composite oxide / Al_TwoO_ThreeAnd SiO_TwoLess to be chosen from
Complex oxides (eg, spinel mullite)
Cordierite) can be used. Next, Cu.Ag.
For metal powder such as Au / Ag alloy, suitable organic binder
Screen printing of paste made by kneading solvent
Glass ceramic green by the method or gravure printing method
Apply to the sheet surface. Similarly, platinum or platinum is used as the resistor paste.
And tin oxide and manganese dioxide or molybdenum trioxide
An appropriate organic binder and solvent are kneaded with the powder of
Screen printing and gravure printing
Apply to glass ceramic green sheet surface by method etc.
I do. Platinum and tin oxide as resistor pastes
Manganese dioxide or molybdenum trioxide powder
A particle having a uniform diameter and a shape close to a spherical shape is desirable. This is a uniform grill
To obtain a sintering state, for example, a part
If a large particle size exists, only that part is locally
The resistance value tends to decrease and the resistance value tends to be unstable. As well
Manganese dioxide to which only 1-4 wt% is added
For molybdenum trioxide in the resistor paste
This is for uniformly dispersing without collecting. Further, tin oxide and platinum in the resistor are not
Be within the range of 40 to 70 wt% and 30 to 60 wt%, respectively.
Is preferred. When platinum exceeds 60%, sintering of platinum
Tends to increase the formation of low resistance paths (low resistance paths)
And the resistance tends to be less than 1Ω and the variation becomes large.
There is. On the other hand, if platinum is less than 30%, sintering of platinum
Low resistance paths are easily formed, and the resistance value is 10k
Ω or more, and the variation in resistance value tends to increase.
You. Manganese dioxide or molybdenum trioxide
Has a TCR lowering effect on the resistor system. So
Is added externally to tin oxide and platinum.
If it is less than 1 wt%, the TCR is sufficiently lower than +200 ppm / ° C.
It is not possible to lower it.
And the tendency of TCR to fall below -200 ppm
is there. This glass ceramic green sheet is
Stack several pieces and apply heat of 50-100 ℃ and pressure of 3-20MPa
In addition, a laminate is manufactured by thermocompression bonding. This laminate is heated at a temperature of about 900 ° C. and a dew point of about 50 ° C.
Baking in a humidified nitrogen atmosphere
can do. [0028] The present invention will be described below in detail with reference to examples.
You. First, a resistor paste having an average particle size of 1 to
1.5 μm platinum and tin oxide and manganese dioxide
The powder was mixed with an organic binder and solvent in the seven compositions shown in Table 1.
It was kneaded to produce a test resistance paste. [0030] [Table 1]Similarly, Cu powder is used as a wiring layer paste.
Knead organic binder and solvent to make Cu paste
Was. Next, the glass ceramic green sheet
First, a Cu paste to be a wiring layer was applied and dried. So
After that, apply a test resistor paste to be a resistor after firing.
It was applied in a fixed test pattern and dried. This time
The antibody test pattern has an aspect ratio of 1 and a film thickness
Was 20 to 25 μm. Then the glass ceramic grid
910 ° C / 50 ° C dew point.
It was fired in an elementary atmosphere. With respect to the wiring board thus manufactured,
Use a digital multimeter to determine the resistance of each test resistor.
It was measured. Regarding the measurement results, the amount of platinum (Pt) added
The change of the average resistance value is shown in a diagram in FIG.
Table 2 shows the value variation. [0034] [Table 2] In FIG. 2, the horizontal axis represents the amount of platinum (Pt) added.
(Unit: weight%), the vertical axis represents the average resistance value (unit: Ω /
□), black diamonds and characteristic curves
This shows the change. Fig. 2 shows the adjustment of the amount of added platinum
The resistance value can be controlled between 10 and 10 kΩ.
Call Also, from Table 2, the resistance value variation (unit:%)
You can see that it is within 30%. In addition, with the wiring board
In terms of function, the resistance value in the graph data of FIG.
The sheet resistance is between 10 and 10 kΩ.
2.3 × 10 when converted to product specific resistance^-FourEquivalent to ~ 0.3Ω · m
You. The oxidation outside the resistance composition shown in Table 1
In the case of tin and platinum compositions, the resistance value itself fluctuates greatly
However, the variation in resistance value exceeds 30%.
Was. Tin oxide composition is less than 40% and platinum composition is 60%
If it does, the resistance will drop sharply to 1Ω or less
And sufficient reproducibility even within the same firing lot
Tend not to be obtained. The composition of tin oxide is 70%
If the platinum composition is less than 30%, the resistance
Increasing the resistance variation to 100% or more at 10kΩ
There was a direction. Further, as an example of adjusting the TCR, tin oxide 40%
Manganese dioxide or trioxide for 60% platinum composition
The change in TCR when molybdenum is externally added is plotted in Fig. 3.
Shown in the figure. In FIG. 3, the low temperature side TCR (-55 ° C to 25 ° C (room
Temperature)) and high-temperature side TCR (25 ° C (room temperature) to 125 ° C)
The horizontal axis shows the results for manganese dioxide.
Addition amount of gun or molybdenum trioxide (unit: wt%)
, The vertical axis represents TCR (unit: ppm / ° C.),
And the characteristic curve of the solid line are manganese dioxide (Mn).
O_Two), The results are plotted with diamond-shaped points and dashed characteristic curves.
Is molybdenum trioxide (MoO_Three)
I have. Here, TCR is from the room temperature to the low temperature side (-55 ° C),
Digital resistance change at high temperature (125 ° C)
It is measured with a chimeter and converted into a resistance change rate. From the results shown in FIG. 3, the low-temperature side and the high-temperature side
Each TCR is manganese dioxide or molybdenum trioxide
It can be seen that control is possible by adding den. Also,
TCR of ± 200ppm / ℃ or less on both high and low temperatures
It can be seen that the addition amount that satisfies the above is 1-4 wt%.
You. Thus, manganese dioxide or trioxide
TCR can be controlled by adding ribene
Was found, the resistance value was determined for various resistance compositions shown in Table 3.
Variation and TCR were measured. [0040] [Table 3]From the results shown in Table 3, the wiring board of the present invention
According to the resistor used, resistance value variation is 30% in the range
(± 15%), TCR can be controlled within ± 200ppm / ℃
I understand that there is. The present invention is limited to the above-described embodiment.
It is not specified and does not deviate from the gist of the present invention.
If so, various changes are possible. For example, the implementation above
In the example of the embodiment, the wiring layer is formed by applying Cu paste.
However, this is transferred to a metal foil such as Cu to form a wiring pattern.
It may be formed by doing. [0043] As described above, according to the wiring board of the present invention,
For example, the inside of an insulating base made of glass ceramics and
Oxidation of resistors formed on the surface by simultaneous firing
Tin and platinum and manganese dioxide or trioxide
Shall consist of butene and have a composition of 40-70 wt% acid
Tin oxide and 30-60 wt% platinum and 1-4 wt% by external addition
% Manganese dioxide or molybdenum trioxide
Simultaneous firing with an insulating substrate made of glass ceramic
Sometimes reaction with glass ceramics or diffusion of metal elements
The phenomenon can be suppressed, and as a result, the resistance value variation
Within ± 15%, no need for trimming adjustment
Within 30%, TCR within ± 200ppm / ℃
A wiring board which can be obtained was obtained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing an example of an embodiment of a wiring board of the present invention. FIG. 2 is a diagram showing a change in an average resistance value with respect to an added amount of platinum (Pt) in a resistor used for a wiring board of the present invention. FIG. 3 is a diagram showing changes in TCR of a low-temperature side TCR and a high-temperature side TCR when manganese dioxide or molybdenum trioxide is externally added to a composition system of 40% tin oxide and 60% platinum. Description: 1: Resistor 2: Wiring layer 3: Insulating base

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Claims (1)

Claims: 1. A wiring comprising: an insulating base made of a glass ceramic sintered body; and a wiring layer and a resistor formed inside and / or on the surface of the insulating base by simultaneous firing with the insulating base. A substrate, wherein the resistor is 40 to 70 wt.
% Tin oxide and 30-60 wt% platinum and 1
A wiring board comprising -4% by weight of manganese dioxide or molybdenum trioxide.