JP2003045739A - Large capacitance capacitor of laminated micro-structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a large capacitance capacitor of laminated micro-structure. SOLUTION: A basic composition unit of a large capacitance capacitor of micro-structure is formed, by forming a trench of adequate width, to-depth ratio on an electrode substrate with the lithography and etching processes and thereafter sequentially forming a high dielectric substance layer and a conductive material layer. A unit layer type large capacitance capacitor of micro-structure is formed, by mutually coupling two sets of the conductive material layer of the basic composition unit. Thereafter, a laminated type large capacitance capacitor of micro-structure is formed, by depositing and coupling a plurality of sets of the single-layer type large capacitance capacitor of micro-structure. The surface area can be increased, thin high dielectric substance layer can be formed and capacitance will not be reduced, by forming the basic component unit of large capacitance capacitor of micro-structure to both surfaces of the electrode substrate with the steps described above, and then forming the lamination type large capacitance capacitor of micro-structure, by coupling a plurality of basic composition units of the large capacitance capacitors of micro-structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a kind of laminated micro-structured large-capacity capacitor, and in particular, after forming a trench having an appropriate width-depth ratio in an electrode substrate by a method of lithography and etching, a high dielectric constant layer is formed. The present invention relates to a laminated microstructure large-capacity capacitor having an appropriate capacitance obtained by forming a layer and a conductive material layer and connecting a plurality of sets.

[0002]

2. Description of the Related Art During the current mobile communications in the star industry, for example, a cellular phone,
Bluetooth module, mobile network browser, global positioning system (global positioning)
system; GPS), personal digital assistant (person)
al digital assistant; PD
Products such as A) and pagers have requirements of lightness, thinness, shortness, and smallness, and therefore the volume of various parts must be reduced.

Capacitors are required driven elements in various electronic products, and as can be seen from the calculation formula of capacitance, C = kε ₀ A / d, the capacitance is directly proportional to the dielectric constant and the electrode area, A method that is inversely proportional to the thickness of the dielectric layer and therefore reduces the volume of the capacitor as well as increases the capacitance of the capacitor is
That is, increasing the dielectric constant, increasing the surface area of the electrode, and decreasing the thickness of the dielectric layer.

FIG. 1 is a cross-sectional view of a well-known multilayer ceramic capacitor (MLCC), in which several layers of electrodes 1 and a dielectric layer 21 are added in the capacitor, and the method of increasing the capacitance currently being performed is as follows. The main method is to increase the surface area of the capacitor, and generally, in the capacitor, the surface area of the capacitor is increased in a laminated manner, and its effect is equivalent to connecting a plurality of capacitors in parallel. However, the large number of stacks is a technology bottleneck, not only can the volume of the capacitor be reduced, but also the capacity of the capacitor cannot be increased, and the microstructured capacitor has an originally flat surface with a three-dimensional spatial structure such as a trench. However, the technique of forming a thin film in a deep hole having a high depth-width ratio is extremely difficult, and the process cost is also very high.

[0005]

SUMMARY OF THE INVENTION The main object of the present invention is to solve the above-mentioned drawbacks and prevent the existence of the above-mentioned drawbacks, that is to say that the present invention provides a kind of laminated microstructure high-capacity capacitor. Provided that it is a structure with increased surface area in a microstructured manner.

Another object of the present invention is to provide a kind of laminated microstructure high capacity capacitor,
It is a high dielectric thin film.

Yet another object of the present invention is to provide a laminated microstructure high capacity capacitor,
It is assumed that the film formation difficulty is lowered at an appropriate width-depth ratio, but the capacity is not reduced by the bonding technique.

[0008]

According to a first aspect of the present invention, there is provided an electrode substrate, a trench formed on one surface of the electrode substrate at an appropriate width / depth ratio in a lithography and etching process, a removed photoresist layer, and The basic composition unit of the microstructure large-capacity capacitor formed by the high-dielectric layer formed on the surface of the electrode substrate and the conductive material layer formed on the surface of the high-dielectric layer has respective conductive material layers. Connected to form a single-layer microstructure large-capacity capacitor,
A laminated micro-structure large-capacity capacitor is characterized in that a plurality of single-layer micro-structure large-capacity capacitors are stacked to have an appropriate capacity. According to a second aspect of the present invention, an electrode substrate, a trench formed in each of the two surfaces of the electrode substrate by a lithography and etching process with an appropriate width-depth ratio, a removed photoresist layer, and formed on the two surfaces of the electrode substrate. A plurality of basic composition units of a micro-structure large-capacity capacitor formed by a high-dielectric layer formed by the above and a conductive material layer formed on the surface of each high-dielectric layer, and having an appropriate capacitance The laminated microstructure large-capacity capacitor is characterized in that

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a kind of laminated micro-structure high-capacity capacitor, which comprises forming a trench having a proper width-depth ratio in an electrode substrate by a method of lithography and etching, and then forming a photoresist layer. Then, a high-dielectric layer and a conductive material layer are sequentially formed to form a basic composition unit of the microstructure large-capacity capacitor, and the conductive material layers of the two basic composition units are connected to each other to form a single layer. One single-layer microstructure large-capacity capacitor is formed, and a plurality of sets of single-layer microstructure large-capacity capacitors are deposited and connected to form a laminated microstructure large-capacity capacitor. The basic composition unit of the microstructure large-capacity capacitor is formed on the two surfaces of one electrode substrate by the above steps,
By forming a laminated micro-structure large-capacity capacitor by connecting basic composition units of a plurality of micro-structure large-capacity capacitors, it is possible to increase the surface area, achieve a high dielectric thin film, and not reduce the capacity.

[0010]

2 to 7 are sectional views showing the manufacturing flow of a laminated microstructure large-capacity capacitor according to the present invention.
A photoresist layer 4 having an appropriate pattern is formed on the electrode substrate 1 by a lithography process on one surface of the n-type silicon, p-type silicon or gold or copper metal electrode substrate 1 having a thickness of 02 to 0.5 mm, and an etching process is performed. Then, a width of 0.002 to 0.1 mm and a depth of 0.002 are formed on the electrode substrate 1 by electrochemical etching, wet etching or dry etching.
After forming an appropriate trench having a width-depth ratio of 2 to 0.5 mm and a width-to-depth ratio of 1: 1 to 1:50 and removing the photoresist layer 4,
The thickness is 10 to 500 nm in order by PVD method or CVD method.
The high dielectric layer 22 and the conductive material layer 3 having a thickness of 100 to 2000 nm are formed on the surface of the electrode substrate 1, that is, the basic composition unit 51 of one microstructure large capacity capacitor is formed, and two sets of microstructure large size are formed. The conductive material layer 3 of the basic composition unit of the capacitive capacitor is connected by a wafer bonding technique to form one single-layer type microstructure large-capacity capacitor 6, and after depositing a plurality of single-layer type microstructure large-capacity capacitors, The layers are connected by high temperature bonding to obtain the laminated microstructure large capacity capacitor 7.

The material of the high dielectric layer 22 of the laminated microstructure large capacity capacitor 7 is barium strontium titanate (Ba _X Sr _1-X TiO ₃ , _X = 0 to 1;
BST), tantalum oxide, titanium oxide, lead zirconium titanate (Pb (Zr, Ti) O ₃ ; PZT),
Lead lanthanum zirconium titanate ((Pb, La)
(Zr, Ti) O ₃ ; PLZT), strontium bismastantalate (SrBi ₂ Ta ₂ O ₉ ; SBT),
The conductive material layer of the laminated microstructure large-capacity capacitor 7 is selected from diamond and diamonds, and is made of aluminum, platinum, ruthenium, titanium, or tungsten.

FIG. 8 is a cross-sectional view of another application example of the present invention, in which the width 0.00
2 to 0.1 mm, a depth of 0.002 to 0.5 mm, and a width / depth ratio of 1: 1 to 1:50 are formed in an appropriate trench, and PV is formed.
A high dielectric layer 22 having a thickness of 10 to 500 nm and a conductive material layer 3 having a thickness of 100 to 2000 nm are sequentially formed on the surface of the electrode substrate 1 by the D method or the CVD method, that is, the basic of one microstructure large capacity capacitor. Forming the composition unit 52,
After depositing the single-layer microstructure large-capacity capacitors of the basic composition unit 52 of the two sets of microstructure large-capacity capacitors, metal high-temperature bonding connection is performed to obtain the laminated microstructure large-capacity capacitor 7.

The above examples are for the purpose of explaining the present invention and are not intended to limit the scope of the claims of the present invention, and any modifications or changes in details that can be made based on the present invention are within the scope of the claims of the present invention. Shall belong.

[0014]

According to the present invention, a trench having an appropriate width-depth ratio is formed in an electrode substrate by a lithography and etching method, and then a high dielectric layer and a conductive material layer are sequentially formed. The basic composition unit of the large-capacity capacitor is formed, and the conductive material layers of the two sets of basic composition units are interconnected to form one single-layer microstructure large-capacity capacitor. Capacitors are stacked and connected to form a laminated microstructure large capacity capacitor. The basic composition unit of the micro-structure large-capacity capacitor is formed on the two surfaces of one electrode substrate by the steps described above, and the basic composition unit of the plurality of micro-structure large-capacity capacitors is connected to form the laminated micro-structure large-capacity capacitor. By doing so, the surface area can be increased,
A high dielectric thin film can be formed and the capacity is not reduced.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a known monolithic ceramic capacitor.

FIG. 2 is a manufacturing flow sectional view of the laminated microstructure large capacity capacitor of the present invention.

FIG. 3 is a manufacturing flow sectional view of a laminated microstructure large capacity capacitor of the present invention.

FIG. 4 is a manufacturing flow sectional view of a laminated microstructure large capacity capacitor of the present invention.

FIG. 5 is a manufacturing flow sectional view of the laminated microstructure large capacity capacitor of the present invention.

FIG. 6 is a manufacturing flow sectional view of a laminated microstructure large capacity capacitor of the present invention.

FIG. 7 is a manufacturing flow sectional view of a laminated microstructure large capacity capacitor of the present invention.

FIG. 8 is a cross-sectional view of another application example of the present invention.

[Explanation of symbols]

1 electrode 21 Dielectric layer 22 High dielectric layer 3 Conductive material layer 4 Photoresist layer 51 Basic composition unit 52 Basic composition unit 6 Single Layer Micro Structure Large Capacitor 7 Laminated Micro Structure Large Capacitance Capacitor

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Huang Jian             Taiwan Taoyuan 縣 中 ▲ Reki ▼ City Nakasatodai Trade Ten Village             114 F-term (reference) 5E082 AA01 AB03 BC39 EE14 EE15                       EE26 EE45 FG03 FG26

Claims (2)

[Claims] 1. An electrode substrate, a trench formed in one surface of the electrode substrate by lithography and etching with an appropriate width-depth ratio, a removed photoresist layer, and a high dielectric constant formed on the surface of the electrode substrate. Layer and a conductive material layer formed on the surface of the high dielectric layer, and a basic structure unit of a microstructure large-capacity capacitor formed by A laminated microstructure large-capacity capacitor, characterized in that a large-capacity capacitor is formed and a plurality of single-layer microstructure large-capacity capacitors are stacked to have an appropriate capacity. 2. An electrode substrate, a trench formed on the two surfaces of the electrode substrate at a suitable width / depth ratio by lithography and etching, a photoresist layer removed, and a trench formed on the two surfaces of the electrode substrate. A high dielectric layer, a conductive material layer formed on the surface of each high dielectric layer, and a plurality of basic composition units of a microstructure large-capacity capacitor formed by are connected to each other to have an appropriate capacitance. This is a laminated micro-structured large-capacity capacitor.