JP2003027212A - Apparatus and method for pattern film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for pattern film deposition in which the accuracy of the relative position between patterns can be improved. SOLUTION: The pattern film deposition apparatus 100 deposits a film on one side of a substrate 1 by the vacuum vapor deposition by a plurality of times to a predetermined pattern shape, and comprises a main mask 21 and an auxiliary mask 22. A large number of rows of holes H transferred in a plurality of times are arrayed in the main mask 21, and the rows are periodically (one row for every three row) transferred. The auxiliary mask 22 overlaps an area other than the holes H correspondingly to the pattern to be transferred out of the main mask, and shields the area, and has a strip-like plate shape for shielding the holes H of the main mask 21 by two rows.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern film forming apparatus compatible with a vapor deposition method or a printing method, and a pattern film forming method using the same.

[0002]

2. Description of the Related Art In recent years, an organic EL (ElectroLuminescence) display device, which has been attracting attention as a display system suitable for ultra-thin and large-screen displays, is a transparent electrode layer on a transparent substrate. An organic EL element in which a (anode), an organic EL layer and a metal electrode layer (cathode) are laminated is arranged vertically and horizontally to form a pixel, and an organic EL layer to which a voltage is applied to both electrodes corresponding to the pixel is formed. A display is performed by emitting light and transmitting light through the substrate at that time.

The organic light-emitting material used for this organic EL layer has low water resistance and is generally formed by patterning while avoiding a wet process. In the case of full-color display, each organic EL layer has a red (R; Red) and a green (G; Gree).
Although n) and blue (B; Blue) are to be painted separately, this step has conventionally been performed as shown in FIG. That is, since all the organic EL layers 3 have the same strip shape, and layers of each color are provided cyclically in units of three primary colors, a metal mask 320 in which a pattern for one color is formed in this shape is used. A film is formed while moving the mask 320. For example, as shown in FIG. 8A, the insulating layer 5 for electrically insulating the anode layer 2 from the element has already been formed.
The substrate 1 on which is formed is placed at a predetermined position, the pattern of the mask 320 is aligned with the formation position of the organic EL layer 3R that emits red light, and a red light emitting material is deposited. Next, the mask is moved, and as shown in FIG. 8B, the pattern position is aligned with the formation position of the organic EL layer 3G that emits green light, and a green light emitting material is deposited. Further, as shown in FIG. 8C, film formation is similarly performed for blue.

[0004]

However, such a method can be adopted only when forming a pattern having the same shape, and different shapes cannot be painted separately. In recent displays, the shape and area of pixels may be changed according to the color in order to adjust the color temperature of each color (for example, a plasma display manufactured by Matsushita Electric Industrial Co., Ltd.
TH-50PH3 / S), when manufacturing such an organic EL display device, an organic EL layer of each color is formed using a mask 320 having a different pattern depending on the pixel shape. In that case, mutual pattern accuracy of each mask 320 became a problem.

It is known that the metal mask has a low pattern accuracy in the first place, and the accuracy decreases as the pattern size increases due to bending or the like. When a plurality of such masks 320 are used in combination, the accuracy of the shape of each organic EL layer 303 as well as the accuracy of the interval between the organic EL layers 303 of different shapes is further reduced. It should be noted that such a problem of mask processing accuracy has always been a problem to be considered in the pattern film forming technique, although there is a difference in degree.

The present invention has been made in view of the above problems, and an object thereof is to provide a film forming apparatus and a film forming method capable of improving the accuracy of the relative position between patterns.

[0007]

Means for Solving the Problems A film forming apparatus of the present invention corresponds to a main mask in which a hole having a shape of each pattern to be transferred in plural times is formed, and a pattern to be transferred in the main mask. It is provided with an auxiliary mask which is superposed on a region other than the holes to be formed, and a material supply source which supplies a film forming material for forming a film having a predetermined pattern shape.

In the film forming method of the present invention, the substrate to be film-formed is placed at a position facing the material supply source through the main mask and the auxiliary mask, and the holes of the main mask correspond to the pattern forming positions of the substrate. The auxiliary mask is installed in a region other than the hole corresponding to the pattern to be transferred in the main mask, and the material is supplied from the material supply source onto the substrate to form a film.

In the film forming apparatus and the film forming method of the present invention, the auxiliary mask is placed in a region other than the hole corresponding to the pattern to be transferred in the main mask every time the film is formed, and the auxiliary mask is set in each film forming process. Only the pattern is selected and transferred.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment] FIG. 1 shows a configuration of a pattern film forming apparatus 100 according to a first embodiment of the present invention. This pattern film forming apparatus 100 forms a film in a predetermined pattern shape on a surface of the substrate 1 by vacuum vapor deposition a plurality of times, and includes a main mask 21, an auxiliary mask 22, a mask fixing portion 23, and Each mask 21, 2
A main mask moving unit 31 for moving 2 and an auxiliary mask moving unit 32, and a vapor deposition source 40 are provided in a vacuum chamber 50. Among them, the mask fixing part 23, the main mask moving part 31, the auxiliary mask moving part 32, and the vapor deposition source 40 are
A control unit 24 provided outside the vacuum chamber 50,
It is connected to the control unit 33 and the control unit 41, respectively. A vacuum pump 60 is connected to the vacuum chamber 50 itself through a pipe.

In this embodiment, two types of masks, a main mask 21 and an auxiliary mask 22, are used. 2 is a diagram showing a more detailed partial structure centering on the masks 21 and 22, and FIG. 3 is a plan view thereof. Main mask 21
Is formed with holes H having the shape of each pattern transferred in plural times. Here, a large number of holes H each having a single strip shape are arranged. Transfer (every three columns). The auxiliary mask 22 is a mask that is overlapped with a region of the main mask other than the hole H corresponding to the pattern to be transferred and shields the region.
It is shaped like a strip that shields only the rows.

The holes H of the main mask 21 may have any pattern shape as long as they do not overlap with each other and a required relative distance is obtained. On the other hand, the corresponding auxiliary mask 22 can have an appropriate shape and number according to the area to be shielded. When each pattern has the same periodic structure as in the present embodiment, it is the same as the main mask 21. A mask having a certain area and having openings periodically provided only at positions to be penetrated may be used. However, the auxiliary mask 22
Needs only to shield the holes H other than the holes H corresponding to the pattern to be transferred, so that the area to be shielded is divided into some areas to simplify the shape of the auxiliary mask 22 as illustrated here. It is more convenient. Furthermore, when superposing more complicated patterns, the auxiliary mask 22 for controlling whether or not to shield each hole H corresponding to the pattern.
It is also conceivable to provide the auxiliary mask moving unit 32.

The main mask 21 and the auxiliary mask 22 are
The mask 1 and the substrate 1 to be formed are fixed at a predetermined position in the vacuum chamber 50 by the mask fixing portion 23. At that time, the substrate 1 and the main mask 21 are aligned, and the main mask 21 or the substrate 1 The alignment of the auxiliary mask 22 is individually performed by the main mask moving unit 31 and the auxiliary mask moving unit 32 moving the main mask 21 and the auxiliary mask 22, respectively. The main mask moving unit 31 is
For example, the substrate 1 and the main mask 21 are aligned by superimposing a mark preliminarily formed on the substrate 1 by lithography or the like and a hole-shaped mark formed in the main mask.
On the other hand, in the auxiliary mask moving unit 32, the holes H formed in the main mask are arranged periodically, so here, a plurality of auxiliary masks 22 are placed on the pedestal 32a as shown in FIG.
It is assumed that the holes are moved by a distance corresponding to one row of the holes H of the main mask at one time, and the marks provided on the pedestal 32a and the marks of the substrate 1 or the main mask 21 are overlapped with each other to perform the alignment. In addition, for example, a groove 32b for holding each auxiliary mask 22 at a fixed position is provided in advance on the pedestal 32a by electric discharge machining or the like, and the auxiliary mask 22 is arranged in the corresponding groove 32b by a robot or the like.

The mask fixing portion 23 is composed of electromagnets 23A and 23B here. The electromagnet 23A is the main mask 2
1 is fixed, and the electromagnet 23B is the main mask 2
The auxiliary mask 22 is fixed to the first mask 1 and is also used when the main mask 21 is primarily fixed in order to prevent bending during fixing. The substrate 1 is sandwiched between the electromagnets 23A and 23B and the main mask 21 and the auxiliary mask 22,
After being aligned as described above, they are fixed while maintaining a predetermined positional relationship. The electromagnet 2 of the mask fixing portion 23
The control unit 24 controls ON / OFF of 3A and 23B.

As described above, since the main mask 21 and the auxiliary mask are attracted to the electromagnet, iron (Fe), nickel (N)
i) and other magnetic materials, and the pedestal 32a is made of non-magnetizable material such as aluminum (Al).

Further, the vapor deposition source 40 supplies a film forming material for forming a film having a predetermined pattern shape,
Here, three vapor deposition sources 40R, 40G, and 40B that are individually controlled by the control unit 41 respectively supply three types of vapor deposition materials to the substrate 1. The vapor deposition source 40 can also be set as required. In addition,
In the present embodiment, the vapor deposition source 40 corresponds to the “material supply source” of the present invention, and the mask fixing portion 23 described above corresponds to the “fixing means”.

In this pattern film forming apparatus 100, when the substrate 1 is installed in the vacuum chamber 50, the main mask moving unit 3
The substrate 1 and the main mask 21 are aligned by 1 and both are fixed in place by the electromagnets 23A and 23B. Then, once the electromagnet 23B is turned off, and the auxiliary mask moving unit 32 aligns the auxiliary mask 22 with the substrate 1 or the main mask 21, the electromagnet 23B is turned on again and the substrate 1 and the main mask 21 are turned on. The auxiliary masks 22 are fixed by being superposed on each other at predetermined positions. At this time, on the surface of the substrate 1, only the holes H in the region where the main mask 21 is not shielded by the auxiliary mask 22, that is, the holes H in one row every three rows are penetrated.
After that, when vapor deposition is performed on the substrate 1 using the vapor deposition source 40 which supplies the vapor deposition material corresponding to this pattern, film formation is performed so as to transfer the pattern shape formed by the above-mentioned through hole H. Be done.

After the film formation, the electromagnet 23B is turned off once, and when the auxiliary mask 22 is received in the groove 32b of the receiving table 32a, the auxiliary mask moving section 32 moves the receiving table 32a at a predetermined distance.
Here, the holes H are moved by one row, and the auxiliary mask 22 and the substrate 1 or the main mask 21 are aligned again. As a result, the auxiliary mask 22 leaves a row of holes H adjacent to the holes H penetrating during the previous film formation, that is, a row of holes H corresponding to a pattern shifted by one row from the transferred pattern. Shield other areas. In this state, when vapor deposition is performed on the substrate 1 using the vapor deposition source 40 which supplies the vapor deposition material corresponding to this pattern, the holes H penetrating the substrate 1 are formed.
Film formation is performed so as to transfer the pattern shape formed by. By repeating this a predetermined number of times, each pattern having a desired shape is formed at a desired position.

As described above, in the pattern film forming apparatus 100, the main mask 2 having the holes H of each pattern shape is formed.
1 is used, and a plurality of patterns are transferred by combining it with the auxiliary mask 22. Further, here, since all the patterns are transferred in an arrangement corresponding to the relative positions of the holes H of the main mask 21, the main mask 21 does not need to be moved each time the film is formed, and only the auxiliary mask 22 is used. It may be moved according to the area to be shielded. Therefore, the main mask 21 and the substrate 1 need only be aligned at the first time, and the auxiliary mask 22 need not be aligned with the high precision required for the main mask 21.

Next, as a specific example of film formation by the pattern film forming apparatus 100, film formation of the organic EL layer 3 of the organic EL element 10 constituting the organic EL display will be described.

FIG. 4 is a plan view showing the structure of the organic EL display, and FIG. 5 is a sectional view taken along the line I--I. In the organic EL display, a large number of organic EL elements 10 are arranged vertically and horizontally to form a pixel. Each organic EL element 10 has a structure in which an organic EL layer 3 is sandwiched between an anode layer 2 and a cathode layer 4 on a substrate 1, and the organic EL layer 3 emits light when a voltage is applied to both electrodes. Display is performed in pixel units. The anode layer 2 and the cathode layer 4 are arranged in parallel in stripes as a common electrode between the adjacent elements 10, and are vertically and horizontally crossed to form a matrix. The intersecting anode layer 2 and cathode layer 4 are formed. The strip-shaped organic EL layers 3 that are sandwiched are separated from each other by an insulating layer 5 to form individual devices 10.

Further, the organic EL element 10 is separated by the insulating layer 5 into organic EL elements 10R, 10G and 10B which emit light of each of the three primary colors of red (R), green (G) and blue (B), For example, on the substrate 1, red, green, blue, red, ... Are periodically arranged in the longitudinal direction of the cathode layer 4. The difference in the emission color of the organic EL element 10 is that the organic EL element
This is due to the material of the layer 3, and the organic EL layer 3 also corresponds to the respective elements 10R, 10G, 10B.
It is divided into G and 3B.

The organic EL layer 3 is, for example, a layer in which a hole transport layer, a light emitting layer and an electron transport layer are laminated from the anode layer 2 side.

The material of the hole transport layer is, for example, α-
Examples thereof include naphthylphenyldiamine, porphyrin, metal tetraphenylporphyrin, metal naphthalocyanine and the like. Further, the light emitting layer is composed of a material having high luminous efficiency, for example, an organic material such as a low molecular weight fluorescent dye, a fluorescent polymer, a metal complex or the like. Organic EL that emits red light
As the light emitting layer of the layer 12R, for example, an azine dye, a coumarin derivative, a xanthene dye, a merocyanine dye, an acridine dye, a phthalocyanine dye, or the like is used. As the light emitting layer of the organic EL layer 12G that emits green light, for example, tris (8-quinolinolato) aluminum, a quinacridone derivative, a xanthene dye, a coumarin derivative, or the like is used. Furthermore, the organic EL layer 12 that emits blue light
In the light emitting layer of B, for example, a metal complex of 8-quinolinol and its derivative, a metal complex obtained by doping the metal complex with a perylene or coumarin derivative, a distyrylarylene derivative and a distyrylarylene derivative disclosed in JP-A-6-9953. What is doped with a fluorescent dye is used. Examples of the material for the electron transport layer include quinoline,
Examples include perylene, bisstyryl, pyrazine, or derivatives thereof. The total thickness of these is, for example, 15
It is set to about 0 nm.

The organic EL element 10 is manufactured as the display described above, and the procedure thereof is, for example, as follows. First, an insulating layer 5 made of SiO ₂ or the like is formed on a substrate 1 made of thin film glass, and then ITO (In
The anode layer 2 made of dium-tin oxide, etc. is formed by sputtering and etching. Further, the strip-shaped organic EL layer 3 is formed on the anode layer 2 by vacuum vapor deposition. This step will be described in detail below. Then Al-L
A cathode layer 4 made of i or the like is formed by vacuum vapor deposition so as to intersect the anode layer 2 and the organic EL layer 3.

In the present embodiment, the formation of the organic EL layer 3 among them is carried out by using the above pattern film forming apparatus 100. As will be described below, this step includes the organic EL layer 3R,
It is performed by sequentially forming the layers of 3G and 3B, but the order of the film formation is not particularly limited. The hole transport layer, the light emitting layer, and the electron transport layer are formed by the same procedure, so here, according to these film forming positions,
The organic EL layers 3R, 3G and 3B will be representatively described.

First, the substrate 1 on which the insulating layer 5 and the anode layer 2 have already been formed is placed at a fixed position of the mask fixing portion 23. Then, the control unit 33 controls the main mask moving unit 31 to move the main mask 21 so that the mark on the substrate 1 and the hole-shaped mark formed on the main mask are overlapped.
The main mask 21 is aligned with the substrate 1. The holes H formed in the main mask 21 are at the relative positions of the individual patterns so that all the patterns of the organic EL layers 3R, 3G, and 3B are transferred as they are. Therefore, the holes H corresponding to the organic EL layers 3R, 3G, and 3B are hereinafter referred to as the holes HR, the holes HG, and the holes HB. These holes HR, HG and HB are formed in the organic EL layers 3R and 3B.
It has a shape corresponding to the shapes of G and 3B (here, all have the same shape).

After that, the main mask 21 is attracted and fixed to one surface of the substrate 1 by the electromagnets 22A and 22B controlled by the controller 24.

Next, the control unit 24 once controls the electromagnet 23.
B is turned off, and the auxiliary mask moving unit 3 is controlled by the control unit 33.
2 to move the auxiliary mask 22 to move the main mask 21
The auxiliary mask is aligned with. Here, a plurality of auxiliary masks 22 are arranged in the groove 32b of the receiving table 32a by a robot or the like, and the receiving table 32a is moved so that the mark provided on the receiving table 32a and the mark of the main mask 21 are overlapped. . At this time, on the surface of the substrate 1, of the three rows of holes HR, HG, HB periodically formed corresponding to the organic EL layers 3R, 3G, 3B of the main mask 21, two of the holes HG, HB are formed. The rows are shielded by the individual auxiliary masks 22 and only the holes HR penetrate periodically. In other words, by superimposing the auxiliary mask 22 on the main mask 21, an apparent pattern similar to that of the metal mask used for forming the organic EL layer 3R appears.

Then, the electromagnet 23B is turned on again,
The substrate 1, the main mask 21, and the auxiliary mask 22 are superposed and fixed.

Next, the inside of the vacuum chamber 50 is shut off from the outside air, the vacuum pump 60 is driven to bring it into a vacuum state, and the control unit 41 controls and operates the vapor deposition source 40 to perform vapor deposition. Here, the vapor deposition source 40 is the organic EL layers 3R, 3
Three vapor deposition sources 40R, which supply materials corresponding to G and 3B,
It is divided into 40G and 40B and is individually controlled by the control unit 41. Now, as shown in FIG. 6A, when vapor deposition is performed on the substrate 1 by the vapor deposition source 40R, film formation is performed on the substrate 1 so that the pattern shape is transferred by the through holes HR, and a predetermined pattern is formed. position,
The organic EL layer 3R made of a red light emitting material having a predetermined shape is formed.

After the film formation is completed, the control unit 24 once turns off the electromagnet 23B, and the control unit 33 controls the groove 32 of the pedestal 32a.
When the auxiliary mask 22 is received in b, the auxiliary mask moving unit 3
2, the pedestal 32a is moved by a predetermined distance, here one row of the holes H, and the auxiliary mask 22 and the main mask 21 are aligned again. As a result, the auxiliary mask 22 leaves a row of patterns of the holes HG adjacent to the holes HR that have been penetrated during the previous film formation and shields the regions of the holes HR and HB. In this state, as shown in FIG. 6B, when vapor deposition is performed on the substrate 1 by using the vapor deposition source 40G that supplies the vapor deposition material corresponding to this pattern, the green color of the predetermined shape is obtained at the predetermined position. An organic EL layer 3G made of a light emitting material is formed.

Similar to the formation of the organic EL layer 3G,
The auxiliary mask 22 is aligned again, and the evaporation source 40B
When vapor deposition is performed using (Fig. 6 (C)),
The organic EL layer 3B made of a blue light emitting material having a predetermined shape is formed.

As described above, the organic EL layers 3R, 3G,
3B is formed respectively. Further, when the cathode layer 4 is formed, the organic EL element 10R having the pattern shown in FIG.
10G and 10B are manufactured.

As described above, in the present embodiment, 1
The holes HR, H of all pattern shapes are formed in one main mask 21.
Since G and HB are formed, the relative positional accuracy between the patterns is improved and variations in the relative positions are also reduced, as compared with the case where a mask is formed for each pattern and film formation is performed while exchanging these masks. can do. Further, here, since all the patterns are transferred in an arrangement corresponding to the relative positions of the holes HR, HG, HB, the main mask 21
Does not need to be moved each time a film is formed, and may be moved according to the area that shields only the auxiliary mask 22. Therefore, the main mask 21 and the substrate 1 need only be aligned at the first time, and the alignment of the auxiliary mask 22 does not have to be as accurate as that required for the main mask 21. Can be aligned to. Furthermore, since only one main mask 21 is required as the main mask, the cost can be reduced as compared with the case where individual masks are manufactured.

[Second Embodiment] FIG. 7 shows a schematic configuration of a pattern film forming apparatus 200 according to a second embodiment of the present invention. This pattern film forming apparatus 200 includes a main mask 71 used as a printing screen, an auxiliary mask 72, and an auxiliary mask fixing portion 73 having an electromagnet 73B, a frame fixing base 81, a frame 82, and a squeegee 8.
It is mainly composed of 3. In addition, the main mask 71,
The auxiliary mask 72 is the main mask 21 and the auxiliary mask 2 of the first embodiment except that it is used for screen printing.
It has the same configuration as that of No. 2 and the same hole H is formed in the main mask 71. In addition, in the present embodiment, the auxiliary mask fixing portion 73 corresponds to the “moving means” and the “fixing means” of the present invention, and the squeegee 83 corresponds to the “material supply source” of the present invention.

The periphery of the main mask 71 is pressed by the frame 82 and fixed to the frame fixing base 81, and one auxiliary mask 72 is placed on the auxiliary mask fixing portion 73 via the substrate 1 on which the film is formed. Placed, but this is
For example, it can be performed as follows. That is, while the auxiliary mask fixing portion 73 and the substrate 1 are rotated by 180 °, the substrate 1 and the auxiliary mask 72 are aligned with each other by a pedestal (not shown here) similar to that of the first embodiment. The auxiliary mask 72 is fixed together with the substrate 1 by the electromagnet 73B. After that, these auxiliary mask fixing portions 73,
When the substrate 1 and the auxiliary mask 72 are rotated 180 °,
As shown in the figure, the substrate 1 and the auxiliary mask 72 are arranged at predetermined positions on the auxiliary mask moving unit 72. The auxiliary mask fixing portion 73 is further moved, and then the main mask 71 is aligned with the substrate 1 or the auxiliary mask 72. The positional relationship of the auxiliary mask 72 with respect to the main mask 71 is the same as in the first embodiment, and therefore the description thereof is omitted here. However, here, the main mask 71 and the substrate 1 and the auxiliary mask 72 are arranged apart from each other by a predetermined distance,
As will be described later, only the portion of the main mask where pressure is applied by the squeegee 83 is in contact with the substrate 1 and the auxiliary mask 72.

In this state, for example, if the squeegee 83 is moved from one end of the main mask 71 to the other end (in the direction indicated by the arrow in the figure) while pressing the printing paste against the main mask 71, The pattern is printed through the holes H of the mask 71 in the region where the auxiliary mask 72 is not placed.

As described above, the pattern film forming apparatus 200 of the present embodiment also has the structure including the main mask 71 and the auxiliary mask 72, and can exhibit the same operation and effect as those of the first embodiment. .

Although the embodiment has been specifically described above, the present invention is not limited to this, and various modifications can be made. For example, in the above embodiment, the main mask 21 is used.
Although (and the main mask 71) and the substrate 1 are aligned only once, the main mask may be moved if necessary. In such cases,
It is possible to reduce the cost by providing a plurality of patterns on one main mask.

Further, in the above-mentioned embodiment, the film formation of the patterns divided by the different film forming materials has been described, but the present invention is not limited to this, and the film forming is performed by dividing the number of times because other film forming conditions are different. The present invention can also be applied to such cases.

Further, in the above embodiment, the organic EL layer 3 of the organic EL element 10 is formed into a film, but the present invention does not limit the object of film formation. Further, in the above embodiment, the pattern film forming apparatus and the film forming method when the vacuum vapor deposition method and the screen printing method are used have been described, but the present invention can be widely applied to general pattern film formation using a mask. Is.

[0044]

As described above, according to the pattern film forming apparatus described in any one of claims 1 to 7 and the pattern film forming method described in any one of claims 8 to 12, it is divided into a plurality of times. Since the main mask in which the holes having the shape of each pattern to be transferred are formed and the auxiliary mask which is provided in the area of the main mask other than the holes corresponding to the pattern to be transferred are provided, the film formation is performed. Each time, the auxiliary mask is placed in a region of the main mask other than the hole corresponding to the pattern to be transferred, and only a predetermined pattern is selected and transferred in each film forming process. Therefore, one main mask is sufficient as the main mask, so that the cost can be reduced as compared with the case where individual masks are manufactured.

Particularly, according to the pattern film forming apparatus of the third aspect and the pattern film forming method of the tenth aspect, the main mask is fixed and only the auxiliary mask is moved each time the film is formed. Since the alignment of the main mask and the substrate can be done only once at the beginning, the relative positional accuracy between each pattern is greater than when the mask made for each pattern is replaced every time the film is formed. Can be improved and variation in relative position can be reduced. In addition, the alignment of the auxiliary mask does not have to be as accurate as that required for the main mask, so that the alignment of the mask can be easily performed while maintaining high positional accuracy. Therefore, even if the processing accuracy of the mask itself remains the same, the accuracy of the relative position between the formed patterns can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a pattern film forming apparatus according to a first embodiment of the present invention.

2 is a configuration diagram of a main part of the pattern film forming apparatus shown in FIG.

FIG. 3 is a plan view of a main portion shown in FIG.

FIG. 4 shows an organic EL device using the pattern film forming apparatus shown in FIG.
It is a block diagram of the organic EL display by which a layer is formed into a film.

5 is a partial cross-sectional view of the organic EL display shown in FIG.

6 is an organic E using the pattern film forming apparatus shown in FIG.
FIG. 6 is a cross-sectional view for each step for explaining the pattern formation method for the L layer.

FIG. 7 is a configuration diagram of a pattern film forming apparatus according to a second embodiment of the present invention.

FIG. 8 is a cross-sectional view of each step for explaining a film forming method of an organic EL layer of a conventional organic EL display.

[Explanation of symbols]

1 ... Substrate, 2 ... Anode layer, 3R, 3G, 3B ... Organic EL
Layer, 4 ... Cathode layer, 5 ... Insulating layer, 10R, 10G, 10B
... Organic EL elements 21, 71 ... Main mask, HR, HG,
HB ... Hole, 22, 72 ... Auxiliary mask, 23 ... Mask fixing part, 23A, 23B ... Electromagnet, 24 ... Control part, 31 ... Main mask moving part, 32 ... Auxiliary mask moving part, 32a ... Cradle, 32b ... Groove , 33 ... Control unit, 40R, 40G, 40
B ... Evaporation source, 41 ... Control part, 50 ... Vacuum chamber, 60
... Vacuum pump, 100,200 ... Pattern deposition apparatus

Claims (12)

[Claims] 1. A main mask having holes formed in the shape of each pattern to be transferred in a plurality of times, and an auxiliary device provided in an area other than the holes corresponding to the pattern to be transferred in the main mask. A pattern film forming apparatus comprising a mask and a material supply source for supplying a film forming material for forming a film having a predetermined pattern shape. 2. The pattern film forming apparatus according to claim 1, further comprising moving means for individually moving the main mask and the auxiliary mask. 3. The pattern film forming apparatus according to claim 2, wherein the moving means moves only the auxiliary mask of the main mask and the auxiliary mask each time a film is formed. 4. The pattern film forming apparatus according to claim 2, wherein the moving means includes a pedestal for moving the plurality of auxiliary masks while keeping a predetermined distance from each other. 5. The pattern film forming apparatus according to claim 1, further comprising fixing means for individually fixing the main mask and the auxiliary mask at predetermined positions. 6. The pattern film forming apparatus according to claim 1, wherein the film is formed by vapor deposition. 7. The pattern film forming apparatus according to claim 1, wherein the film is formed by printing. 8. A main mask having holes each having a shape of each pattern transferred in plural times, and an auxiliary mask,
A method for forming a film having a predetermined pattern shape by using a pattern film forming apparatus equipped with a material supply source, wherein the film is formed at a position facing the material supply source through the main mask and the auxiliary mask. A target substrate is set, the main mask is set at a position where the holes correspond to the pattern formation position of the substrate, and an auxiliary mask is set in an area of the main mask other than the holes corresponding to the pattern to be transferred. Then, the film is formed by supplying a material from the material supply source onto the substrate to form a film. 9. The pattern film forming apparatus according to claim 8, wherein each pattern is transferred in an arrangement corresponding to the relative position of the holes formed in the main mask. 10. The pattern film forming method according to claim 8, wherein only the auxiliary mask is moved for each film formation while the main mask is fixed. 11. The pattern film forming method according to claim 8, wherein the film formation is performed by vapor deposition. 12. The pattern film forming method according to claim 8, wherein the film formation is performed by printing.