JP2003018039A - Rf stage module - Google Patents
Rf stage moduleInfo
- Publication number
- JP2003018039A JP2003018039A JP2002102151A JP2002102151A JP2003018039A JP 2003018039 A JP2003018039 A JP 2003018039A JP 2002102151 A JP2002102151 A JP 2002102151A JP 2002102151 A JP2002102151 A JP 2002102151A JP 2003018039 A JP2003018039 A JP 2003018039A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transmission line
- balanced
- stage module
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種コンピュー
タ、その周辺装置、携帯電話などの移動体通信機に用い
られ、これを相互に接続してデータ通信を行う周波数ホ
ッピング方式使用するブルートゥース等のＲＦ回路に関
し、特に高周波スイッチ回路とその周辺回路を複合一体
化したＲＦ段モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in various computers, their peripheral devices, mobile communication devices such as mobile phones, and RF such as Bluetooth using a frequency hopping system in which these are mutually connected for data communication. More particularly, the present invention relates to an RF stage module in which a high frequency switch circuit and its peripheral circuits are combined and integrated.
【０００２】[0002]
【従来の技術】２．４ＧＨｚのＩＳＭ（Industrial, Sc
ientific and Medical、産業、科学及び医療）帯域は、
ＤＳＳＳ（Direct Sequence Spread Spectrumダイレ
クト・シーケンス・スペクトル拡散）、無線通信向けの
もの等のＩＥＥＥ８０２．１１規格に準拠する無線ＬＡ
Ｎ（ＷＬＡＮ）通信に利用されている。このような無線
ＬＡＮ（ＷＬＡＮ）と同じ２．４ＧＨｚのＩＳＭ帯域を
利用し、関連し合う電子機器との接続がケーブルを用い
ることなく実現でき極めて利便性の高い技術である近距
離無線規格ブルートゥース（ＢｌｕｅｔｏｏｔｈＴＭ）
が提案されている。このブルートゥースは２．４ＧＨz
の前記ＩＳＭ周波数帯を複数の無線チャンネルに分割し
て使用し、さらに各無線チャンネルを単位時間（１／１
６００秒）ごとに分割してタイムスロットとし、使用す
る無線チャンネルをタイムスロットごとに切り替える耐
ノイズ性に優れた周波数ホッピング方式が採用されてい
る。送受信の切り替えは、ＰＨＳ（PersonalHandy Phon
e System）等と同様に時分割複信（ＴＤＤ;Time Divisi
on Duplex）方式が採用され、このＴＤＤ方式は送信と
受信を同一のキャリア周波数とする方式である。2. Description of the Related Art 2.4 GHz ISM (Industrial, Sc)
Orientific and Medical, Industrial, Scientific and Medical)
Wireless LA compliant with the IEEE 802.11 standard such as DSSS (Direct Sequence Spread Spectrum) and wireless communication
It is used for N (WLAN) communication. Using the same 2.4 GHz ISM band as such a wireless LAN (WLAN), it is possible to realize connection with related electronic devices without using a cable, which is an extremely convenient technology. Bluetooth ™ )
Is proposed. This Bluetooth is 2.4GHz
The ISM frequency band is divided into a plurality of wireless channels for use, and each wireless channel is further divided into a unit time (1/1).
A frequency hopping method with excellent noise resistance is adopted, in which a radio channel to be used is divided every 600 seconds) to form a time slot and the radio channel to be used is switched for each time slot. PHS (Personal Handy Phon)
Time Division Duplex (TDD)
on Duplex) system is adopted, and this TDD system uses transmission and reception with the same carrier frequency.
【０００３】もともと、ブルートゥースはその利用が同
一敷地内、同一建物内など比較的狭い地域として想定さ
れているので、電波が到達するエリアは１０ｍ程度の距
離範囲であり、送信時で３０ｍＷ、待機時では０．３ｍ
Ｗと省電力に設計されている。このようなブルートゥー
スのＲＦ回路の一例を図１に示す。このブルートゥース
のＲＦ回路は、アンテナＡＮＴの後段に高周波フィルタ
（ＦＩＬＴＥＲ）が配置され、アンテナから入放射する
高周波信号は伝送すべき送受信信号に濾波される。その
後段には送信回路ＴＸと前記アンテナＡＮＴとの接続、
及び受信回路ＲＸと前記アンテナＡＮＴとの接続を切り
替える高周波スイッチＳＷと、この高周波スイッチＳＷ
と前記送信回路間に配置される平衡−不平衡変換回路で
ある第1のバルントランスＢａｌｕｎ１と、前記高周波
スイッチと前記受信回路間に配置される第２のバルント
ランスＢａｌｕｎ２とを有する。前記高周波スイッチＳ
Ｗは、ブルートゥースの通信がＴＤＤ方式で行われるこ
と、送信時の電力が３０ｍＷと極めて省電力であること
がら、ＧａＡｓスイッチが広く用いられている。スイッ
チ回路によりアンテナと受信回路間、送信回路とアンテ
ナ間との接続が切換えられ、高周波信号はそれぞれの回
路に適宜導かれる。ＲＦＩＣのＲＦ段モジュール側の入
出力部は雑音指数をさげ、受信感度を上げるように、そ
れぞれ差動動作する様に２本の信号端子にて構成されて
いる。そして前記ＲＦＩＣの入出力インピーダンスは５
０Ω〜２００Ω程度であるため、各部品の特性インピー
ダンスが異なる場合には、インピーダンス変換回路も必
要となり、スイッチ回路とＲＦＩＣとの間には平衡‐不
平衡回路として前記バルントランスＢａｌｕｎ１，２が
配置されている。Originally, the use of Bluetooth is assumed to be a relatively narrow area such as within the same site or in the same building, so the area where radio waves reach is a range of about 10 m, 30 mW during transmission, and during standby. Then 0.3m
Designed for W and power saving. An example of such a Bluetooth RF circuit is shown in FIG. In this Bluetooth RF circuit, a high frequency filter (FILTER) is arranged at the rear stage of the antenna ANT, and the high frequency signal entering and radiating from the antenna is filtered into a transmission / reception signal to be transmitted. In the subsequent stage, the connection between the transmitter circuit TX and the antenna ANT,
And a high frequency switch SW for switching the connection between the receiving circuit RX and the antenna ANT, and the high frequency switch SW
And a first balun transformer Balun1 which is a balanced-unbalanced conversion circuit arranged between the transmitting circuit and a second balun transformer Balun2 arranged between the high-frequency switch and the receiving circuit. The high frequency switch S
As for W, a GaAs switch is widely used because Bluetooth communication is performed by the TDD method and the power during transmission is 30 mW, which is extremely power saving. The switch circuit switches the connection between the antenna and the receiving circuit, and the connection between the transmitting circuit and the antenna, and the high-frequency signal is appropriately guided to each circuit. The input / output unit on the RF stage module side of the RFIC is composed of two signal terminals so as to perform a differential operation so as to reduce the noise figure and increase the reception sensitivity. And the input / output impedance of the RFIC is 5
Since it is about 0Ω to 200Ω, an impedance conversion circuit is also required when the characteristic impedance of each component is different, and the balun transformers Balun 1 and 2 are arranged as a balanced-unbalanced circuit between the switch circuit and the RFIC. ing.
【０００４】[0004]
【発明が解決しようとする課題】このようなＲＦ段モジ
ュールは、その無線システムのもつ利便性から、用いら
れる機器の小型軽量化されたデザイン等の市場要求に応
じて、ＲＦ段モジュールも小型軽量化が求められ、また
低価格化の要請も強い。前記ＲＦＩＣはパワーアンプ等
の高周波デバイスを含み、これを駆動するのに従来は直
流電圧供給手段からチョークコイルを介して直流電圧を
供給していた。小型軽量化の要求に対して最近のＲＦ段
モジュールにおいては、前記チョークコイルを含む回路
部品の低減が求められていた。また、ＲＦ段モジュール
が用いられる機器は、携帯電話などに複合化されるよう
になってきている。無線ＬＡＮやブルートゥースが利用
するＩＳＭ周波数帯域は、工作機械や電子レンジ等から
の放射ノイズが多い帯域であることから、無線システム
として、もともと通信方式として耐ノイズ性に優れた周
波数ホッピング方式が採用されている。しかしながら、
他の通信機器、例えばＰＣＳ（Ｐｅｒｓｏｎａｌ Ｃｏ
ｍｍｕｎｉｃａｔｉｏｎ Ｓｅｒｖｉｃｅｓ）たＤＣＳ
（Ｄｉｇｉｔａｌ Ｃｅｌｌｕｌａｒ Ｓｙｓｔｅｍ）
等の携帯電話の高周波信号がごく近傍に存在する場合に
は、その高周波信号がノイズとして作用し、前記周波数
方式であっても少なからず影響を受けてしまう。他方、
通信機器にとっても同様に、ブルートゥースの高周波信
号がノイズとして作用する。このためアンテナから放射
される帯域外の高周波信号は、ブルートゥースでは例え
ば２倍波で３０ｄＢ以上の減衰量が望まれている。しか
しながら前記スイッチ回路としてＧａＡｓスイッチを用
いる場合には、広帯域な挿入損失で帯域外の減衰量も小
さいといった特性から、アンテナトップに配置される高
周波フィルタは、その帯域外減衰量の大きなものが必要
とされるが、大きな帯域外減衰量を得ようとすれば、フ
ィルタを構成する回路素子を増やさざるを得ず、挿入損
失が劣化し、形状も大きくせざるを得ず、更なるＲＦ段
モジュールの小型化には限界があった。また無線ＬＡＮ
やブルートゥースは、携帯電話やノート型コンピュータ
のように、バッテリーで駆動させる機器において使用さ
れる場合が多い。この為更なる低消費電力化も望まれて
いるが、前記の理由から困難な状況にあった。そこで本
発明の目的は、部品点数を削減し、高調波の減衰特性に
優れ、かつた低消費電力である小型のＲＦ段モジュール
を提供することである。Due to the convenience of the wireless system, such an RF stage module has a small size and a light weight according to the market demand such as a compact and lightweight design of the equipment used. There is a strong demand for lower prices and lower prices. The RFIC includes a high frequency device such as a power amplifier, and in order to drive the high frequency device, a DC voltage has conventionally been supplied from a DC voltage supply means through a choke coil. In response to the demand for smaller size and lighter weight, in recent RF stage modules, reduction of circuit components including the choke coil has been required. In addition, devices using the RF stage module have come to be combined with mobile phones and the like. Since the ISM frequency band used by wireless LAN and Bluetooth is a band with a lot of radiation noise from machine tools, microwave ovens, etc., a frequency hopping system with excellent noise resistance was originally adopted as a communication system for the wireless system. ing. However,
Other communication devices such as PCS (Personal Co)
DCS (mmunication Services)
(Digital Cellular System)
When a high frequency signal of a mobile phone such as the one exists in the vicinity, the high frequency signal acts as noise, and even if the frequency system is used, it is affected to a considerable extent. On the other hand,
Similarly, for communication equipment, the high frequency signal of Bluetooth acts as noise. For this reason, it is desired that the high frequency signal outside the band radiated from the antenna be attenuated by 30 dB or more in the second harmonic wave in Bluetooth. However, when a GaAs switch is used as the switch circuit, a high-frequency filter arranged on the antenna top needs to have a large out-of-band attenuation because of the characteristics that the out-of-band attenuation is small due to wide-band insertion loss. However, in order to obtain a large out-of-band attenuation amount, the number of circuit elements constituting the filter must be increased, the insertion loss is deteriorated, and the shape must be increased. There was a limit to miniaturization. Also wireless LAN
Bluetooth is often used in battery-powered devices such as mobile phones and notebook computers. For this reason, further reduction in power consumption is desired, but it has been difficult due to the above reasons. Therefore, an object of the present invention is to provide a small-sized RF stage module which has a reduced number of parts, is excellent in harmonic attenuation characteristics, and has low power consumption.
【０００５】[0005]
【課題を解決するための手段】本発明は、送信回路、受
信回路及びアンテナとの間に配置され、前記送信回路と
前記アンテナとの接続、および前記受信回路と前記アン
テナとの接続を制御するスイッチ回路と、当該スイッチ
回路と前記送信回路との間に配置される第１の平衡−不
平衡回路を具備し、前記第１の平衡−不平衡回路は第1
の伝送線路と当該第1の伝送線路と電磁結合する第２の
伝送線路と第３の伝送線路を備え、前記第1の伝送線路
は一端が不平衡端に接続され他端が接地又は開放端とな
り、第２の伝送線路は一端が接地され他端が第1の平衡
端に接続され、第３の伝送線路は一端が接地され他端が
第２の平衡端に接続されるバルントランスであって、前
記第１の平衡−不平衡回路を構成するバルントランスの
前記第２、第３の伝送線路の一端同士が接続しコンデン
サを介して接地されるＲＦ段モジュールである。本発明
において、前記スイッチ回路と前記受信回路との間に配
置される第２の平衡−不平衡回路を具備し、前記第２の
平衡−不平衡回路は第４の伝送線路と当該第４の伝送線
路と電磁結合する第５の伝送線路と第６の伝送線路を備
え、前記第４の伝送線路は一端が不平衡端に接続され他
端が接地又は開放端となり、第５の伝送線路は一端が接
地され他端が第３の平衡端に接続され、第６の伝送線路
は一端が接地され他端が第４の平衡端に接続されるバル
ントランスとするのが好ましい。本発明のＲＦ段モジュ
ールでは、前記コンデンサのホット側から前記第２、第
３の伝送線路に直流電圧を供給し、第１及び第２の平衡
端子から直流電圧を出力するようになした。この直流電
圧により、ＲＦＩＣのパワーアンプを動作させている。
アンテナとスイッチ回路との間に、フィルタ回路を配置
するのが好ましい。さらに、送信回路からアンテナの間
に、前記送信回路からの高周波信号からの高周波信号に
含まれる他の無線通信システム周波数帯の周波数成分を
選択的に減衰させるように、インダクタとコンデンサと
の直列共振回路により減衰極を形成するのが好ましい。
そして、前記スイッチ回路と、前記第１、第２の平衡−
不平衡回路とを複数の誘電体層を積層してなる積層体に
一体化するのが好ましく、さらに誘電体アンテナを具備
し、該誘電体アンテナを前記積層体に一体化してもよ
い。The present invention is arranged between a transmission circuit, a reception circuit and an antenna and controls the connection between the transmission circuit and the antenna and the connection between the reception circuit and the antenna. A switch circuit, and a first balanced-unbalanced circuit arranged between the switch circuit and the transmission circuit, wherein the first balanced-unbalanced circuit is a first
And a second transmission line electromagnetically coupled to the first transmission line, and a third transmission line, wherein the first transmission line has one end connected to the unbalanced end and the other end grounded or open. The second transmission line is a balun transformer with one end grounded and the other end connected to the first balanced end, and the third transmission line is a balun transformer whose one end is grounded and the other end is connected to the second balanced end. Thus, the RF stage module in which one ends of the second and third transmission lines of the balun transformer forming the first balanced-unbalanced circuit are connected to each other and are grounded via a capacitor. In the present invention, a second balanced-unbalanced circuit is provided between the switch circuit and the reception circuit, and the second balanced-unbalanced circuit includes a fourth transmission line and the fourth transmission line. A fifth transmission line and a sixth transmission line electromagnetically coupled to the transmission line are provided, and one end of the fourth transmission line is connected to the unbalanced end and the other end is grounded or an open end, and the fifth transmission line is It is preferable that one end is grounded and the other end is connected to the third balanced end, and the sixth transmission line is a balun transformer in which one end is grounded and the other end is connected to the fourth balanced end. In the RF stage module of the present invention, a DC voltage is supplied from the hot side of the capacitor to the second and third transmission lines, and a DC voltage is output from the first and second balanced terminals. The DC amplifier operates the power amplifier of the RFIC.
A filter circuit is preferably arranged between the antenna and the switch circuit. Further, a series resonance of an inductor and a capacitor is provided between the transmission circuit and the antenna so as to selectively attenuate a frequency component of another radio communication system frequency band included in the high frequency signal from the high frequency signal from the transmission circuit. The circuit preferably forms the attenuation pole.
Then, the switch circuit and the first and second balanced-
It is preferable that the unbalanced circuit is integrated with a laminated body formed by laminating a plurality of dielectric layers, and a dielectric antenna may be further provided, and the dielectric antenna may be integrated with the laminated body.
【０００６】[0006]
【発明の実施の形態】本発明について、以下詳細に説明
する。図１は本発明の一実施例に係るＲＦ段モジュール
の回路ブロックの一例であり、図２乃至５は前記ＲＦ段
モジュールに用いるバルントランスＢａｌｕｎ１、２の
等価回路である。このＲＦ段モジュールは、不要な高周
波信号を減衰させる高周波フィルタ（ＦＩＬＴＥＲ）
と、送信信号と受信信号を切り換える高周波スイッチ
（ＳＷ）、平衡−不平衡変換回路としてのバルントラン
スＢａｌｕｎ１、Ｂａｌｕｎ２を備える。図２に送信側
に用いるバルントランスの一例を示す。送信側（ＴＸ）
のバルントランスＢａｌｕｎ１は、第1の伝送線路Ｌ１
とこの第1の伝送線路Ｌ１と電磁結合する第２の伝送線
路Ｌ２と第３の伝送線路Ｌ３を備え、前記第1の伝送線
路Ｌ１は一端が不平衡端１０１に接続され他端が接地さ
れ、第２の伝送線路Ｌ２は一端が接地され他端が第1の
平衡端１０２に接続され、第３の伝送線路Ｌ３は一端が
接地され他端が第２の平衡端１０３に接続される。前記
第１の平衡−不平衡回路を構成するバルントランスの前
記第１、第２の伝送線路の一端同士が接続してコンデン
サＣ１を介して接地されるとともに、前記コンデンサの
ホット側から第２の伝送線路Ｌ２と第３の伝送線路Ｌ３
に直流電圧を供給できるように電圧供給端Ｖｄｄが形成
されている。この電圧供給端Ｖｄｄからみて、前記第２
の伝送線路Ｌ２と前記第３の伝送線路Ｌ３はほぼ等しい
線路長を有しおり、前記電圧供給端Ｖｄｄから直流電圧
が供給されると、第２の伝送線路Ｌ２と前記第３の伝送
線路Ｌ３には、ほぼ同じ大きさの電流が逆方向に流れ、
第1の平衡端１０２と第2の平衡端１０３には略等しい直
流電圧が出力される。前記第1の平衡端１０２と第２の
平衡端１０３はＲＦＩＣの送信側出力部に接続されてお
り、電圧供給端Ｖｄｄから直流電圧を印加した場合にＲ
ＦＩＣの送信出力部の２本の平衡端子に、同時にほぼ等
しい直流電圧を印加できる。このため従来必要であった
チョークコイルを準備する必要がない。本発明のＲＦ段
モジュールによれば、従来電圧供給のために必要であっ
た複数のディスクリート部品を削減することが出来るた
め、ＲＦ段モジュールを小型かつ軽量化出来、価格も低
廉化出来る。また、前記コンデンサＣ１は第1の平衡端
１０２と第2の平衡端１０３に入力される高周波信号の
位相差を調整するように機能させることも出来る。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below. FIG. 1 is an example of a circuit block of an RF stage module according to an embodiment of the present invention, and FIGS. 2 to 5 are equivalent circuits of balun transformers Balun 1 and 2 used in the RF stage module. This RF stage module is a high frequency filter (FILTER) that attenuates unnecessary high frequency signals.
And a high frequency switch (SW) for switching between a transmission signal and a reception signal, and balun transformers Balun1 and Balun2 as a balanced-unbalanced conversion circuit. FIG. 2 shows an example of the balun transformer used on the transmitting side. Sending side (TX)
Balun transformer Balun1 is the first transmission line L1.
And a second transmission line L2 and a third transmission line L3 which are electromagnetically coupled to the first transmission line L1. One end of the first transmission line L1 is connected to the unbalanced end 101 and the other end is grounded. The second transmission line L2 has one end grounded and the other end connected to the first balanced end 102, and the third transmission line L3 has one end grounded and the other end connected to the second balanced end 103. One ends of the first and second transmission lines of the balun transformer forming the first balanced-unbalanced circuit are connected to each other and grounded via the capacitor C1, and the second side from the hot side of the capacitor. Transmission line L2 and third transmission line L3
A voltage supply terminal Vdd is formed so that a DC voltage can be supplied to. Seen from the voltage supply terminal Vdd, the second
The transmission line L2 and the third transmission line L3 have substantially the same line length, and when a DC voltage is supplied from the voltage supply terminal Vdd, the second transmission line L2 and the third transmission line L3 are supplied. , The current of almost the same magnitude flows in the opposite direction,
Substantially equal DC voltages are output to the first balanced end 102 and the second balanced end 103. The first balanced end 102 and the second balanced end 103 are connected to the output side of the RFIC, and when a DC voltage is applied from the voltage supply end Vdd, R
It is possible to apply substantially equal DC voltages simultaneously to the two balanced terminals of the transmission output section of the FIC. Therefore, it is not necessary to prepare the choke coil which is conventionally required. According to the RF stage module of the present invention, it is possible to reduce a plurality of discrete components which are conventionally required for supplying a voltage, so that the RF stage module can be reduced in size and weight, and the cost can be reduced. Further, the capacitor C1 can also function to adjust the phase difference between the high frequency signals input to the first balanced end 102 and the second balanced end 103.
【０００７】図３はバルントランスの他の例を示す等価
回路であり、このバルントランスの場合は、前記第1の
伝送線路は一端が不平衡端に接続され他端が開放端とな
り、第２の伝送線路は一端が接地され他端が第1の平衡
端に接続され、第３の伝送線路は一端が接地され、他端
が第２の平衡端に接続される。この場合も前記第１の平
衡−不平衡回路を構成するバルントランスの前記第１、
第２の伝送線路の一端同士が接続しコンデンサＣ１を介
して接地されるとともに、前記コンデンサのホット側か
ら直流電圧を供給できるように電圧供給端Ｖｄｄが形成
されており、図２に開示したバルントランスと同様に第
２の伝送線路Ｌ２と前記第３の伝送線路Ｌ３には、ほぼ
同じ大きさの電流が逆方向に流れ、第1の平衡端１０２
と第2の平衡端１０３には略等しい直流電圧が出力され
る。したがって別途チョークコイルを準備する必要がな
く、従来電圧供給のために必要であった複数のディスク
リート部品を削減することが出来るため、ＲＦ段モジュ
ールを小型かつ軽量化出来、価格も低廉なものに出来
る。また、このバルントランスは図１４に示すように、
２．４ＧＨｚの２倍波帯域で減衰極をもつ。バルントラ
ンス単体でも不要な高周波信号を減衰させることがで
き、前段に配置される高周波フィルタに求められる帯域
外減衰量、特に通過帯域よりも高周波側の減衰量は、そ
れほど大きなものを用いなくてもよい。この為、高周波
フィルタを少ない回路素子で構成出来るので小型化で
き、また低挿入損失となるので低消費電力化も実現する
ことができる。それほど大きな帯域外減衰量が必要とさ
れない場合に、前記高周波フィルタとして積層ＬＣフィ
ルタ、弾性表面波フィルタを用いることができ、これら
は共に安価に構成できるので、その結果としてＲＦ段モ
ジュールも安価に提供することが出来る。FIG. 3 is an equivalent circuit showing another example of the balun transformer. In the case of this balun transformer, one end of the first transmission line is connected to the unbalanced end and the other end is an open end, and The transmission line has one end grounded and the other end connected to the first balanced end, and the third transmission line has one end grounded and the other end connected to the second balanced end. Also in this case, the first of the balun transformers forming the first balanced-unbalanced circuit,
One end of the second transmission line is connected to each other and grounded via a capacitor C1, and a voltage supply end Vdd is formed so that a DC voltage can be supplied from the hot side of the capacitor, and the balun disclosed in FIG. Similar to the transformer, currents of substantially the same magnitude flow in opposite directions in the second transmission line L2 and the third transmission line L3, and the first balanced end 102
And a substantially equal DC voltage is output to the second balanced end 103. Therefore, it is not necessary to separately prepare a choke coil, and it is possible to reduce a plurality of discrete components required for voltage supply in the related art, so that the RF stage module can be made small and lightweight, and the price can be made low. . In addition, this balun transformer, as shown in FIG.
It has an attenuation pole in the second harmonic band of 2.4 GHz. Even a balun transformer alone can attenuate unnecessary high-frequency signals, and the out-of-band attenuation required for the high-frequency filter placed in the preceding stage, especially the attenuation on the high-frequency side of the pass band, does not need to be so large. Good. Therefore, the high-frequency filter can be configured with a small number of circuit elements, so that the size can be reduced, and the insertion loss can be reduced, so that the power consumption can be reduced. When a large amount of out-of-band attenuation is not required, a laminated LC filter or a surface acoustic wave filter can be used as the high frequency filter, and both of them can be constructed at low cost, and as a result, the RF stage module can be provided at low cost. You can do it.
【０００８】受信側（ＲＸ）に用いられるバルントラン
スＢａｌｕｎ２の一例を図４、５に示す。例えば図４の
バルントランスＢａｌｕｎ２は、第４の伝送線路Ｌ４と
この第４の伝送線路Ｌ４と電磁結合する第５の伝送線路
Ｌ５と第６の伝送線路Ｌ６を備え、前記第４の伝送線路
Ｌ４は一端が不平衡端１０５に接続され他端が接地さ
れ、第５の伝送線路Ｌ５は一端が接地され他端が第３の
平衡端１０６に接続され、第６の伝送線路Ｌ６は一端が
接地され他端が第４の平衡端１０７に接続される。前記
第１の平衡−不平衡回路を構成するバルントランスの前
記第５、第６の伝送線路の一端同士が接続して接地され
る。その基本的な回路構成は送信側（ＴＸ）に用いられ
るバルントランスＢａｌｕｎ１と比較し、電圧供給端Ｖ
ｄｄを有さない点以外は同じである。図５に示したバル
ントランスＢａｌｕｎ２も同様であり、その説明を省
く。An example of the Balun transformer Balun 2 used on the receiving side (RX) is shown in FIGS. For example, the balun transformer Balun2 of FIG. 4 includes a fourth transmission line L4, a fifth transmission line L5 and a sixth transmission line L6 electromagnetically coupled to the fourth transmission line L4, and the fourth transmission line L4. Has one end connected to the unbalanced end 105 and the other end grounded, the fifth transmission line L5 has one end grounded and the other end connected to the third balanced end 106, and the sixth transmission line L6 has one end grounded. The other end is connected to the fourth balanced end 107. One ends of the fifth and sixth transmission lines of the balun transformer forming the first balanced-unbalanced circuit are connected to each other and grounded. Its basic circuit configuration is the same as that of the Balun transformer Balun1 used on the transmission side (TX), and the voltage supply terminal V
It is the same except that it does not have dd. The balun transformer Balun2 shown in FIG. 5 is also the same, and its explanation is omitted.
【０００９】図６、７は、図１に示すＲＦ段モジュール
を構成する高周波スイッチ（ＳＷ）の等価回路である。
例えば図６に示すダイオードスイッチは、ダイオードＤ
１、Ｄ２と、伝送線路Ｌ１０、Ｌ１１及びコンデンサＣ
１０を主要素子として構成される。また図７に示すＧａ
Ａｓスイッチは、電界効果トランジスタＦＥＴ１〜ＦＥ
Ｔ４、コンデンサＣ１１、抵抗Ｒ１、Ｒ２を主要素子と
して構成される。これらの高周波スイッチではＤＣカッ
ト用のコンデンサが必要に応じて配置される。FIGS. 6 and 7 are equivalent circuits of the high frequency switch (SW) constituting the RF stage module shown in FIG.
For example, the diode switch shown in FIG.
1, D2, transmission lines L10, L11 and capacitor C
10 is a main element. Ga shown in FIG.
As switches are field effect transistors FET1 to FE.
The T4, the capacitor C11, and the resistors R1 and R2 are main elements. In these high frequency switches, capacitors for DC cut are arranged as needed.
【００１０】図８乃至１０は、図１に示すＲＦ段モジュ
ールを構成する高周波フィルタ（ＦＩＬＴＥＲ）の等価
回路である。例えば図８の帯域通過フィルタは、コンデ
ンサＣ１００〜Ｃ１０６と、伝送線路Ｌ１００，Ｌ１０
１を主要素子として構成される。また図９示す低域通過
フィルタは、コンデンサＣ１１０〜Ｃ１１２と伝送線路
Ｌ１１０を主要素子として構成される。図１０に示す低
域通過フィルタは、コンデンサＣ１１０〜Ｃ１１２と伝
送線路Ｌ１１０、Ｌ１１１を主要素子として構成される
この低域通過フィルタは伝送線路Ｌ１１１とコンデンサ
Ｃ１１２を有し、この直列共振回路はグランドに接続さ
れる。この直列共振回路の伝送線路Ｌ１１１のインダク
タとコンデンサＣ１１２の適宜選定することにより、他
の通信機器の高周波信号を選択的に減衰することが出来
る。また、前記直列共振回路は信号経路に直列に配置さ
れていないので、本来通過させるべき高周波信号の挿入
損失特性を損なうことがない。8 to 10 are equivalent circuits of the high frequency filter (FILTER) which constitutes the RF stage module shown in FIG. For example, the bandpass filter of FIG. 8 includes capacitors C100 to C106 and transmission lines L100 and L10.
1 as a main element. The low pass filter shown in FIG. 9 includes capacitors C110 to C112 and a transmission line L110 as main elements. The low-pass filter shown in FIG. 10 has capacitors C110 to C112 and transmission lines L110 and L111 as main elements. This low-pass filter has a transmission line L111 and a capacitor C112, and this series resonant circuit is connected to ground. Connected. By appropriately selecting the inductor and the capacitor C112 of the transmission line L111 of the series resonance circuit, it is possible to selectively attenuate the high frequency signal of another communication device. Further, since the series resonant circuit is not arranged in series in the signal path, the insertion loss characteristic of the high frequency signal that should be originally passed is not impaired.
【００１１】図１１乃至１３は、他の回路ブロックのＲ
Ｆ段モジュールである。例えば図１１に回路ブロックと
して示すＲＦ段モジュールは、アンテナ（ＡＮＴ）と高
周波スイッチ（ＳＷ）間に配置される高周波フィルタ
（ＦＩＬＴＥＲ）を低域通過フィルタとし、前記高周波
スイッチＳＷと受信側（ＲＸ）のバルントランスＢａｌ
ｕｎ２との間に高周波フィルタ（ＦＩＬＴＥＲ）を配置
して構成される。このように構成すれば、アンテナ（Ａ
ＮＴ）と高周波スイッチ（ＳＷ）間に配置される高周波
フィルタの帯域内挿入損失を、図１に示すように前記高
周波フィルタを帯域通過フィルタのみで構成する場合よ
りも小さくすることができる、送信側（ＴＸ）の挿入損
失を図１の回路ブロックに示すＲＦ段モジュールより小
さくすることができる。また、高周波スイッチＳＷと受
信側（ＲＸ）のバルントランスＢａｌｕｎ２との間に配
置される高周波フィルタ（ＦＩＬＴＥＲ）も、前記低域
通過フィルタにより、高周波フィルタに求められる帯域
外減衰量、特に通過帯域よりも高周波側の減衰量は、そ
れほど大きなものを用いなくてもよい。この為、高周波
フィルタを少ない回路素子で構成出来るので小型化で
き、そして低消費電力化も実現することができる。また
図１２に示す回路ブロックのように、高周波スイッチＳ
Ｗと送信側（ＴＸ）のバルントランスＢａｌｕｎ１との
間に高周波フィルタ（ＦＩＬＴＥＲ）を配置し、これを
低域通過フィルタとしても良く、この場合には送信側
（ＴＸ）の挿入損失を図１の回路ブロックに示すＲＦ段
モジュールよりも小さくすることが出来る。図１３は、
受信側（ＲＸ）の平衡−不平衡変換回路として入力が平
衡端で、出力が平衡端の弾性表面波フィルタを用いて構
成したＲＦ段モジュールである。この場合には、平衡−
不平衡変換回路と高周波フィルタを一つの弾性表面波フ
ィルタで構成できるので、ＲＦ段モジュールを小型化す
ることが出来る。11 to 13 show R of other circuit blocks.
It is an F-stage module. For example, in an RF stage module shown as a circuit block in FIG. 11, a high-frequency filter (FILTER) arranged between an antenna (ANT) and a high-frequency switch (SW) is a low-pass filter, and the high-frequency switch SW and the receiving side (RX) are used. Balun trance Bal
A high frequency filter (FILTER) is arranged between the un2 and un2. With this configuration, the antenna (A
NT) and the high-frequency switch (SW), the in-band insertion loss of the high-frequency filter can be made smaller than in the case where the high-frequency filter is composed of only the band-pass filter as shown in FIG. The insertion loss of (TX) can be made smaller than that of the RF stage module shown in the circuit block of FIG. Further, the high frequency filter (FILTER) arranged between the high frequency switch SW and the balun transformer Balun2 on the reception side (RX) also has an out-of-band attenuation amount required for the high frequency filter by the low pass filter, particularly from the pass band. However, it is not necessary to use a large amount of attenuation on the high frequency side. Therefore, the high-frequency filter can be configured with a small number of circuit elements, so that the size can be reduced and the power consumption can be reduced. Further, as in the circuit block shown in FIG. 12, the high frequency switch S
A high frequency filter (FILTER) may be arranged between W and the balun transformer Balun1 on the transmission side (TX), and this may be used as a low pass filter. In this case, the insertion loss on the transmission side (TX) is shown in FIG. It can be made smaller than the RF stage module shown in the circuit block. Figure 13
The RF stage module is configured by using a surface acoustic wave filter having a balanced end as an input and a balanced end as an balanced-unbalanced conversion circuit on the receiving side (RX). In this case, the equilibrium −
Since the unbalance conversion circuit and the high frequency filter can be configured by one surface acoustic wave filter, the RF stage module can be downsized.
【００１２】図８に示すバンドパスフィルタをアンテナ
と高周波スイッチとの間に配置し、図６に示すダイオー
ドスイッチを前記高周波スイッチとし、送信側の平衡−
不平衡変換回路を図３に示すバルントランスとし、受信
側の平衡−不平衡変換回路を図５に示すバルントランス
として図１に示すＲＦ段モジュールを構成した。このＲ
Ｆ段モジュールは、送信時にはダイオードスイッチの制
御端子ＶＣ１に正の電圧が与えられ、ダイオードＤ１，
Ｄ２をＯＮ状態にするとともに、送信側のバルントラン
スＢａｌｕｎ１の電圧供給端Ｖｄｄから直流電圧が印加
される。また受信時にはダイオードスイッチの制御端子
ＶＣ１に０の電圧を与え、ダイオードＤ１，Ｄ２をＯＦ
Ｆ状態にするとともに、送信側のバルントランスＢａｌ
ｕｎ１の電圧供給端Ｖｄｄに直流電圧を印加しないよう
に制御される。このように制御することで、ＲＦ段モジ
ュールを省電力なものとしている。The band pass filter shown in FIG. 8 is arranged between the antenna and the high frequency switch, and the diode switch shown in FIG. 6 is used as the high frequency switch.
The unbalanced conversion circuit is the balun transformer shown in FIG. 3, and the balanced-unbalanced conversion circuit on the receiving side is the balun transformer shown in FIG. This R
In the F-stage module, a positive voltage is applied to the control terminal VC1 of the diode switch during transmission, and the diode D1,
While turning on D2, a DC voltage is applied from the voltage supply terminal Vdd of the Balun transformer Balun1 on the transmission side. Also, at the time of reception, a voltage of 0 is applied to the control terminal VC1 of the diode switch to turn off the diodes D1 and D2.
In addition to the F state, the transmitter balun transformer Bal
It is controlled so that the DC voltage is not applied to the voltage supply terminal Vdd of un1. By controlling in this way, the RF stage module is made to save power.
【００１３】このＲＦ段モジュールでは、前記フィル
タ、スイッチ回路、バルントランスの伝送線路やコンデ
ンサを誘電体からなる積層体に内蔵するようにし、積層
体に内蔵出来なかった受動素子や、ダイオード、ＧａＡ
ｓＦＥＴ、ＲＦＩＣ等の能動素子を前記積層体に搭載す
るように構成することで、図１５に示す小型のＲＦ段モ
ジュール２００を構成することが出来た。前記誘電体
は、例えばＡｌ２Ｏ３を主成分としＳｉＯ２、ＳｒＯ、
ＣａＯ、ＰｂＯ、Ｎａ２Ｏ、Ｋ２Ｏを副成分として含
む、比誘電率が８の低温焼成が可能なセラミック誘電体
材料を用い、これをドクターブレード法などの公知のシ
ート成形方法によって、厚さが３０μｍ〜２００μｍの
グリーンシートとし、そのグリーンシート上にＡｇやＣ
ｕ等の導電ペーストを印刷して高周波フィルタやバルン
トランス、高周波スイッチを構成する伝送線路、コンデ
ンサやグランド電極を構成する電極パターンを形成し、
それを適宜積層し、一体焼成して構成される。さらに、
前記積層体に誘電体アンテナを積層して構成するなどし
て一体的に構成することも出来るし、面実装タイプの誘
電体アンテナを前記積層体に実装してもよい。また、前
記積層体をＨＴＣＣ（高温同時焼成セラミック）技術を
用いて、誘電体をＡｌ２Ｏ３とし伝送線路等をタングス
テンやモリブデンとして構成してもよいし、基板に回路
素子を実装して構成することも出来る。In this RF stage module, the filter, the switch circuit, the transmission line of the balun transformer, and the capacitor are built in a laminated body made of a dielectric material, and passive elements, diodes, and GaA that could not be built in the laminated body.
A small RF stage module 200 shown in FIG. 15 could be constructed by constructing an active element such as an sFET or RFIC so as to be mounted on the laminated body. The dielectric contains, for example, Al 2 O 3 as a main component, SiO 2 , SrO,
A ceramic dielectric material containing CaO, PbO, Na 2 O, and K 2 O as subcomponents and having a relative dielectric constant of 8 and capable of low-temperature firing is used, and this is formed by a known sheet forming method such as a doctor blade method. Having a size of 30 μm to 200 μm, and Ag or C on the green sheet.
A conductive paste such as u is printed to form a high-frequency filter, a balun transformer, a transmission line that constitutes a high-frequency switch, an electrode pattern that constitutes a capacitor and a ground electrode,
It is formed by appropriately laminating it and integrally firing it. further,
The dielectric antenna may be integrally formed by laminating a dielectric antenna on the laminated body, or a surface mount type dielectric antenna may be mounted on the laminated body. The laminated body may be formed by using HTCC (high temperature co-fired ceramics) technology, the dielectric may be Al 2 O 3 and the transmission line or the like may be tungsten or molybdenum, or a circuit element may be mounted on a substrate. You can also do it.
【００１４】本発明のジュールとしては、上述したよう
な様々な回路ブロックのＲＦ段モジュールがあるが、前
記の如く、前記電圧供給端Ｖｄｄから直流電圧を供給
し、第２の伝送線路Ｌ２と前記第３の伝送線路Ｌ３に、
ほぼ同じ大きさの電流が逆方向に流れるようにし、第1
の平衡端１０２と第2の平衡端１０３には略等しい直流
電圧が出力するように構成してあれば本発明の範囲内と
いえる。As the module of the present invention, there are RF stage modules of various circuit blocks as described above, but as described above, a DC voltage is supplied from the voltage supply terminal Vdd, and the second transmission line L2 and the In the third transmission line L3,
Allow almost the same amount of current to flow in the opposite direction.
It can be said to be within the scope of the present invention if it is configured so that substantially equal DC voltages are output to the balanced end 102 and the second balanced end 103.
【００１５】[0015]
【発明の効果】本発明によれば、部品点数を削減し、高
調波の減衰特性に優れ、かつ低消費電力の小型のＲＦ段
モジュールを提供することが出来る。According to the present invention, it is possible to provide a small-sized RF stage module with a reduced number of parts, excellent harmonic attenuation characteristics, and low power consumption.
【図１】 本発明の一実施例に係るＲＦ段モジュールの
回路ブロック図である。FIG. 1 is a circuit block diagram of an RF stage module according to an embodiment of the present invention.
【図２】 本発明のＲＦ段モジュールの送信側に用いる
バルントランスの一例を示す等価回路図である。FIG. 2 is an equivalent circuit diagram showing an example of a balun transformer used on the transmitting side of the RF stage module of the present invention.
【図３】 本発明のＲＦ段モジュールの送信側に用いる
バルントランスの他の例を示す等価回路図である。FIG. 3 is an equivalent circuit diagram showing another example of the balun transformer used on the transmitting side of the RF stage module of the present invention.
【図４】 本発明のＲＦ段モジュールの受信側に用いる
バルントランスの一例を示す等価回路図である。FIG. 4 is an equivalent circuit diagram showing an example of a balun transformer used on the receiving side of the RF stage module of the present invention.
【図５】 本発明のＲＦ段モジュールの受信側に用いる
バルントランスの他の例を示す等価回路図である。FIG. 5 is an equivalent circuit diagram showing another example of the balun transformer used on the receiving side of the RF stage module of the present invention.
【図６】 本発明のＲＦ段モジュールに用いる高周波ス
イッチの一例を示す等価回路図である。FIG. 6 is an equivalent circuit diagram showing an example of a high frequency switch used in the RF stage module of the present invention.
【図７】 本発明のＲＦ段モジュールに用いる高周波ス
イッチの他の例を示す等価回路図である。FIG. 7 is an equivalent circuit diagram showing another example of the high-frequency switch used in the RF stage module of the present invention.
【図８】 本発明のＲＦ段モジュールに用いる高周波フ
ィルタの一例を示す等価回路図である。FIG. 8 is an equivalent circuit diagram showing an example of a high frequency filter used in the RF stage module of the present invention.
【図９】 本発明のＲＦ段モジュールに用いる高周波フ
ィルタの他の例を示す等価回路図である。FIG. 9 is an equivalent circuit diagram showing another example of the high-frequency filter used in the RF stage module of the present invention.
【図１０】 本発明のＲＦ段モジュールに用いる高周波
フィルタの他の例を示す等価回路図である。FIG. 10 is an equivalent circuit diagram showing another example of the high-frequency filter used in the RF stage module of the present invention.
【図１１】 本発明の他の実施例に係るＲＦ段モジュー
ルの回路ブロック図である。FIG. 11 is a circuit block diagram of an RF stage module according to another embodiment of the present invention.
【図１２】 本発明の他の実施例に係るＲＦ段モジュー
ルの回路ブロック図である。FIG. 12 is a circuit block diagram of an RF stage module according to another embodiment of the present invention.
【図１３】 本発明の他の実施例に係るＲＦ段モジュー
ルの回路ブロック図である。FIG. 13 is a circuit block diagram of an RF stage module according to another embodiment of the present invention.
【図１４】 本発明のＲＦ段モジュールに用いるバルン
トランスの挿入損失特性の一例を示す特性図である。FIG. 14 is a characteristic diagram showing an example of insertion loss characteristics of a balun transformer used in the RF stage module of the present invention.
【図１５】 本発明の一実施例に係るＲＦ段モジュール
の斜視図である。FIG. 15 is a perspective view of an RF stage module according to an embodiment of the present invention.
Ｌ１ 第1の伝送線路 Ｌ２ 第２の伝送線路 Ｌ３ 第３の伝送線路 Ｃ１ コンデンサ １０１ 不平衡端 １０２ 第1の平衡端 １０３ 第２の平衡端 Ｖｄｄ 電圧供給端 L1 first transmission line L2 second transmission line L3 Third transmission line C1 capacitor 101 unbalanced end 102 First balanced end 103 Second balanced end Vdd voltage supply terminal
Claims (7)
に配置され、前記送信回路と前記アンテナとの接続、お
よび前記受信回路と前記アンテナとの接続を制御するス
イッチ回路と、当該スイッチ回路と前記送信回路との間
に配置される第１の平衡−不平衡回路を具備し、前記第
１の平衡−不平衡回路は第1の伝送線路と当該第1の伝送
線路と電磁結合する第２の伝送線路と第３の伝送線路を
備え、前記第1の伝送線路は一端が不平衡端に接続され
他端が接地又は開放端となり、第２の伝送線路は一端が
接地され他端が第1の平衡端に接続され、第３の伝送線
路は一端が接地され他端が第２の平衡端に接続されるバ
ルントランスであって、前記第１の平衡−不平衡回路を
構成するバルントランスの前記第２、第３の伝送線路の
一端同士が接続しコンデンサを介して接地されることを
特徴とするＲＦ段モジュール。1. A switch circuit arranged between a transmitter circuit, a receiver circuit, and an antenna for controlling connection between the transmitter circuit and the antenna and connection between the receiver circuit and the antenna, and the switch circuit. A first balance-unbalance circuit disposed between the transmitter circuit and the transmitter circuit, wherein the first balance-unbalance circuit is electromagnetically coupled to the first transmission line and the first transmission line; And a third transmission line, one end of the first transmission line is connected to the unbalanced end and the other end is grounded or an open end, and the second transmission line is grounded at one end and the other end is at the other end. A balun transformer connected to the balanced end of 1 and having a third transmission line grounded at one end and connected to the second balanced end at the other end, which constitutes the first balanced-unbalanced circuit. One end of each of the second and third transmission lines of RF stage module, characterized in that it is grounded via the capacitor.
に配置される第２の平衡−不平衡回路を具備し、前記第
２の平衡−不平衡回路は第４の伝送線路と当該第４の伝
送線路と電磁結合する第５の伝送線路と第６の伝送線路
を備え、前記第４の伝送線路は一端が不平衡端に接続さ
れ他端が接地又は開放端となり、第５の伝送線路は一端
が接地され他端が第３の平衡端に接続され、第６の伝送
線路は一端が接地され他端が第４の平衡端に接続される
バルントランスであることを特徴とする請求項１に記載
のＲＦ段モジュール。2. A second balanced-unbalanced circuit arranged between the switch circuit and the receiving circuit, wherein the second balanced-unbalanced circuit includes a fourth transmission line and the fourth transmission line. A fifth transmission line and a sixth transmission line that are electromagnetically coupled to the transmission line, and the fourth transmission line has a first end connected to the unbalanced end and a second end grounded or open; Is a balun transformer having one end grounded and the other end connected to the third balanced end, and the sixth transmission line is a balun transformer having one end grounded and the other end connected to the fourth balanced end. 1. The RF stage module described in 1.
２、第３の伝送線路に直流電圧を供給し、第１及び第２
の平衡端子から直流電圧を出力するようになしたことを
特徴とする請求項１又は２に記載のＲＦ段モジュール。3. A DC voltage is supplied to the second and third transmission lines from the hot side of the capacitor, and the first and second transmission lines are supplied.
The RF stage module according to claim 1 or 2, wherein a DC voltage is output from the balanced terminal of the above.
ルタ回路を有することを特徴とする請求項１乃至３のい
ずれかに記載のＲＦ段モジュール。4. The RF stage module according to claim 1, further comprising a filter circuit between the antenna and the switch circuit.
回路からの高周波信号からの高周波信号に含まれる他の
無線通信システム周波数帯の周波数成分を選択的に減衰
させる手段を有し、前記手段がインダクタとコンデンサ
との直列共振回路による減衰極の形成であることを特徴
とする請求項４に記載のＲＦ段モジュール。5. A means for selectively attenuating a frequency component of another radio communication system frequency band included in a high frequency signal from the high frequency signal from the transmission circuit is provided between the transmission circuit and the antenna, and the means. 5. The RF stage module according to claim 4, wherein is an attenuation pole formed by a series resonance circuit of an inductor and a capacitor.
平衡−不平衡回路とを複数の誘電体層を積層してなる積
層体に一体化することを特徴とする請求項１乃至５のい
ずれかに記載のＲＦ段モジュール。6. The switch circuit and the first and second balanced-unbalanced circuits are integrated into a laminated body formed by laminating a plurality of dielectric layers. The RF stage module according to any one of 1.
テナを前記積層体に一体化することを特徴とする請求項
６に記載のＲＦ段モジュール。7. The RF stage module according to claim 6, further comprising a dielectric antenna, wherein the dielectric antenna is integrated with the laminated body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102151A JP3758157B2 (en) | 2001-04-04 | 2002-04-04 | RF stage module |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001105378 | 2001-04-04 | ||
| JP2001-105378 | 2001-04-04 | ||
| JP2002102151A JP3758157B2 (en) | 2001-04-04 | 2002-04-04 | RF stage module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005260713A Division JP4143976B2 (en) | 2001-04-04 | 2005-09-08 | module |
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|---|---|
| JP2003018039A true JP2003018039A (en) | 2003-01-17 |
| JP3758157B2 JP3758157B2 (en) | 2006-03-22 |
Family
ID=26613054
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002102151A Expired - Fee Related JP3758157B2 (en) | 2001-04-04 | 2002-04-04 | RF stage module |
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| JP (1) | JP3758157B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004079856A1 (en) * | 2003-03-05 | 2004-09-16 | Sony Corporation | Balun |
| JP2005184244A (en) * | 2003-12-17 | 2005-07-07 | Mitsumi Electric Co Ltd | Coupler and high frequency module |
| JP2005184245A (en) * | 2003-12-17 | 2005-07-07 | Mitsumi Electric Co Ltd | Coupler and high frequency module |
| JP2005333012A (en) * | 2004-05-20 | 2005-12-02 | Hitachi Metals Ltd | Laminated balun transformer and high-frequency switch module using the same |
| JP2005333011A (en) * | 2004-05-20 | 2005-12-02 | Hitachi Metals Ltd | Laminated balun transformer and high-frequency switch module using the same |
| JP2005348054A (en) * | 2004-06-02 | 2005-12-15 | Murata Mfg Co Ltd | Balanced clock signal output circuit, and high frequency oscillator using the same |
| FR2894062A1 (en) * | 2005-11-30 | 2007-06-01 | St Microelectronics Sa | Mode-switching transformer with specified impedance ratio for converting common mode signals into differential signals and conversely, comprises two planar windings, via, and third planar winding(s) |
| EP1826914A1 (en) * | 2004-12-13 | 2007-08-29 | Hitachi Metals, Ltd. | High frequency circuit, high frequency circuit components and communication apparatus using the same |
| US7328041B2 (en) | 2003-10-14 | 2008-02-05 | Fujitsu Media Devices Limited | High-frequency switch module |
| JP2008072738A (en) * | 2004-06-30 | 2008-03-27 | Hitachi Metals Ltd | High frequency circuit, high frequency component, and multi-band communication apparatus |
| WO2008066344A1 (en) * | 2006-11-30 | 2008-06-05 | Xronet Corporation | Rf receiver, rf transceiver and mimo rf transceiver embedding balun |
| US7391596B2 (en) * | 2003-12-19 | 2008-06-24 | Broadcom Corporation | High frequency integrated circuit pad configuration including ESD protection circuitry |
| JP2009124746A (en) * | 2004-06-30 | 2009-06-04 | Hitachi Metals Ltd | High frequency circuit, and multi-band communication apparatus |
| US7623006B2 (en) | 2006-06-22 | 2009-11-24 | Stmicroelectronics S.A. | Power combiner/splitter |
| US7667556B2 (en) | 2005-11-30 | 2010-02-23 | Stmicroelectronics S.A. | Integrated power combiner/splitter |
| WO2010055682A1 (en) * | 2008-11-14 | 2010-05-20 | 株式会社フジクラ | Resin multilayer device and method for manufacturing same |
| CN103066940A (en) * | 2012-12-12 | 2013-04-24 | 锐迪科科技有限公司 | Passive balance and non-balance converter |
| US9236907B2 (en) | 2010-09-14 | 2016-01-12 | Hitachi Metals, Ltd. | Laminate-type electronic device with filter and balun |
| WO2019159774A1 (en) * | 2018-02-13 | 2019-08-22 | 株式会社村田製作所 | Balance filter |
| CN116015342A (en) * | 2023-03-27 | 2023-04-25 | 安徽矽磊电子科技有限公司 | Radio frequency receiving and transmitting front-end circuit shared by receiving and transmitting antennas |
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| US7952458B2 (en) | 2005-11-30 | 2011-05-31 | Stmicroelectronics S.A. | Balun with a 1/4 impedance ratio |
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| US9236907B2 (en) | 2010-09-14 | 2016-01-12 | Hitachi Metals, Ltd. | Laminate-type electronic device with filter and balun |
| CN103066940A (en) * | 2012-12-12 | 2013-04-24 | 锐迪科科技有限公司 | Passive balance and non-balance converter |
| WO2019159774A1 (en) * | 2018-02-13 | 2019-08-22 | 株式会社村田製作所 | Balance filter |
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| CN116015342A (en) * | 2023-03-27 | 2023-04-25 | 安徽矽磊电子科技有限公司 | Radio frequency receiving and transmitting front-end circuit shared by receiving and transmitting antennas |
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